Semiconductor refrigeration module and refrigeration equipment

Abstract

The utility model provides a semiconductor refrigeration module and refrigeration equipment. The semiconductor refrigeration module comprises a semiconductor refrigeration module and a vacuum heat insulation shell, an accommodating space is formed in the vacuum heat insulation shell; the semiconductor refrigeration module is arranged in the containing space, the containing space is filled with microcapsule phase change materials, and the filling height of the microcapsule phase change materials does not exceed the preset position of the semiconductor refrigeration module. According to the semiconductor refrigeration module, the low-resistance thermocouple pair is adopted at the position with a good external heat dissipation effect, and the high-resistance thermocouple pair is adopted at the position with a poor heat dissipation effect, so that the performance of each thermocouple pair is brought into full play, and the refrigeration efficiency of the whole semiconductor refrigeration module is improved. According to the thermoelectric module, a to-be-refrigerated target with large heat can be quickly cooled and refrigerated through the microcapsule phase change material, so that the refrigeration efficiency of the thermoelectric module is improved, the temperature at the bottom plate tends to be uniform, and the refrigeration effect on the to-be-refrigerated target is more uniform.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor refrigeration, in particular to a semiconductor refrigeration module and refrigeration equipment. Background Art

[0002] Semiconductor refrigerators operate using direct current and can both cool and heat. The polarity of the direct current is varied to determine whether cooling or heating is achieved on the same refrigerator. This effect is achieved through the principle of thermoelectricity. A refrigerator consists of two ceramic plates with an N-type and P-type semiconductor material (bismuth telluride) between them. These semiconductor elements are connected in series. The operating principle of a semiconductor refrigerator is that when an N-type semiconductor and a P-type semiconductor are connected to form a galvanic pair, and a direct current is passed through this circuit, energy transfer occurs. The junction where current flows from the N-type element to the P-type element absorbs heat, becoming the cold end, while the junction where current flows from the P-type element to the N-type element releases heat, becoming the hot end. The amount of heat absorbed and released is determined by the current magnitude and the number of N and P pairs of semiconductor elements. Within the refrigerator, hundreds of pairs of galvanic pairs form a thermopile to achieve enhanced cooling (heating) efficiency.

[0003] However, for heat sources that require heat dissipation, the surface temperature distribution is uneven, and the heat dissipation requirements of different parts vary. This makes the design and manufacture of semiconductor cooling modules more difficult. At the same time, the uneven temperature of the heat source will also cause uneven temperature distribution on the surface of the semiconductor cooling module, which is not conducive to further cooling and heat dissipation. Utility Model Content

[0004] In view of the defects in the prior art, the purpose of the present invention is to provide a semiconductor refrigeration module and refrigeration equipment.

[0005] According to the present invention, a semiconductor refrigeration module is provided, comprising: a semiconductor refrigeration module 11 and a vacuum insulation shell 12;

[0006] The vacuum insulation shell 12 has an accommodating space inside;

[0007] The semiconductor refrigeration module 11 is disposed in the accommodation space, and the accommodation space is filled with microcapsule phase change material. The filling height of the microcapsule phase change material does not exceed a preset position of the semiconductor refrigeration module 11 .

[0008] Furthermore, the semiconductor refrigeration module 11 includes:

[0009] Base 101;

[0010] an insulating layer 102 connected to the upper surface of the base 101;

[0011] a first circuit layer 104 connected to the upper surface of the insulating layer 102 , wherein the preset position is the upper surface of the first circuit layer 104 ;

[0012] a plurality of thermocouple pairs 105 , with cold ends electrically connected to the first circuit layer 104 ;

[0013] The second circuit layer 106 is electrically connected to the cold end and the hot end of the thermocouple pair 105;

[0014] The resistance values ​​of the thermocouple pairs 105 at different positions are arranged according to the thermal finite element analysis results of the external heat sink. The higher the temperature, the greater the resistance value of the thermocouple pairs 105 corresponding to the position.

[0015] Furthermore, an insulation-reinforced composite layer 103 is further provided on the upper surface of the insulation layer 102 , and the first circuit layer 104 is connected to the upper surface of the insulation-reinforced composite layer 103 .

[0016] Furthermore, two ends of the thermocouple pair 105 are respectively connected to the first circuit layer 104 and the second circuit layer 106 through a eutectic process to form a eutectic layer 107 .

[0017] Furthermore, a nano-waterproof coating layer is formed on the surface of the thermocouple pair 105 by vapor deposition of acrylic resin material.

[0018] Furthermore, a temperature sensor is provided in the base 101 .

[0019] Furthermore, the thickness of the first circuit layer 104 is more than twice the thickness of the second circuit layer 106 .

[0020] Furthermore, the vacuum insulation shell 12 includes: a bottom plate 108, a dam 109, a cover plate 110 and a nano-waterproof coating layer;

[0021] The bottom plate 108 is provided with a window 111, and the bottom plate 108 is used to connect to the target to be cooled;

[0022] The dam 109 is integrally formed with the bottom plate, surrounds the window 111 and extends in the height direction of the bottom plate 108;

[0023] The cover plate 110 is connected to the inner wall of the dam 109 to seal the microcapsule phase change material layer in the accommodation space below the cover plate 110;

[0024] A nano-waterproof coating layer is filled in the accommodation space above the cover plate 110;

[0025] The bottom plate 108 and the dam 109 have a vacuum layer inside.

[0026] Furthermore, a rivet post 112 is provided on the bottom plate 108 between the window 111 and the dam 109 , and a corresponding rivet post hole 113 is opened on the base 101 . The rivet post 112 and the rivet post hole 113 are connected by ultrasonic welding.

[0027] A refrigeration device provided by the present invention includes the semiconductor refrigeration module.

[0028] Compared with the prior art, the present invention has the following beneficial effects:

[0029] 1. This application uses low-resistance thermocouple pairs at locations with good external heat dissipation effects, and high-resistance thermocouple pairs at locations with poor heat dissipation effects, so that the performance of each thermocouple pair can be maximized, thereby improving the cooling efficiency of the overall semiconductor refrigeration module.

[0030] 2. The present invention can quickly cool down a target with a large amount of heat through microcapsule phase change materials, thereby improving the cooling efficiency of the thermoelectric module. At the same time, it can make the temperature at the bottom plate tend to be uniform, so the cooling effect on the target is also more uniform. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Other features, objects and advantages of the present invention will become more apparent from the detailed description of the non-limiting embodiments with reference to the following drawings:

[0032] Figure 1 It is a three-dimensional diagram of a semiconductor refrigeration module;

[0033] Figure 2 It is a three-dimensional diagram of a semiconductor refrigeration module;

[0034] Figure 3 It is a side view of the semiconductor refrigeration module;

[0035] Figure 4 is a perspective view of a vacuum insulation shell;

[0036] Figure 5 It is a three-dimensional diagram of the semiconductor refrigeration system;

[0037] Figure 6 is a three-dimensional diagram of a liquid cooling module;

[0038] Figure 7 A perspective view of a jet heat exchange module;

[0039] Figure 8 A perspective view of the stepped heat dissipation module. DETAILED DESCRIPTION

[0040] The present invention will be described in detail below with reference to specific embodiments. The following embodiments will help those skilled in the art further understand the present invention, but are not intended to limit the present invention in any way. It should be noted that a person skilled in the art may make various variations and improvements without departing from the scope of the present invention. Such variations and improvements are all within the scope of protection of the present invention.

[0041] Example 1

[0042] like Figure 1 As shown, a semiconductor refrigeration module includes a semiconductor refrigeration module 11 and a vacuum insulation housing 12. The vacuum insulation housing 12 has a storage space inside; the semiconductor refrigeration module 11 is disposed in the storage space, and the storage space is filled with microcapsule phase change material. The filling height of the microcapsule phase change material does not exceed the preset position of the semiconductor refrigeration module 11.

[0043] like Figure 2 and Figure 3 As shown, the semiconductor refrigeration module 11 includes: a base 101 , an insulating layer 102 , a first circuit layer 104 , a plurality of thermocouple pairs 105 and a second circuit layer 106 .

[0044] The insulating layer 102 is connected to the upper surface of the base 101 , the first circuit layer 104 is connected to the upper surface of the insulating layer 102 , the cold ends of the multiple thermocouple pairs 105 are electrically connected to the first circuit layer 104 , and the second circuit layer 106 is electrically connected to the cold ends and hot ends of the thermocouple pairs 105 .

[0045] Because one end of the thermocouple pair 105 is the cold end, used to cool the object being refrigerated, and the other end is the hot end, which generates heat, other heat dissipation devices are typically required to dissipate heat from the hot end. For example, using liquid cooling equipment to cool the end surface of a semiconductor heat dissipation module where the cold end is located, as the liquid flows from one side to the other, one side may have a good cooling effect due to sufficient heat exchange, while the other side may have a poor cooling effect due to the liquid having already heated up.

[0046] To address this issue, in this application, the resistance values ​​of the thermocouple pairs 105 at different locations are arranged based on the thermal finite element analysis results of the external heat sink. The higher the temperature, the greater the resistance value of the corresponding thermocouple pair 105. Thermocouple pairs 105 with different resistance values ​​have different cross-sectional sizes. The greater the resistance value, the smaller the cross-sectional area. The resistance value of the thermocouple pair 105 is gradually distributed from high to low, so that the performance of the thermocouple pair 105 is brought to the extreme. The surface of the thermocouple pair 105 is formed by vapor deposition of acrylic resin material to form a nano-waterproof coating layer, which plays a role in waterproofing, corrosion resistance, and anti-electron migration.

[0047] In other embodiments, an insulation-reinforced composite layer 103 is further provided on the upper surface of the insulation layer 102 , and the first circuit layer 104 is connected to the upper surface of the insulation layer 102 through the insulation-reinforced composite layer 103 .

[0048] The ends of the thermocouple pair 105 are connected to the first circuit layer 104 and the second circuit layer 106 respectively through a eutectic process, so that eutectic layers 107 are formed between the ends of the thermocouple pair 105 and the first circuit layer 104 and the second circuit layer 106 respectively. The thickness of the first circuit layer 104 is more than twice the thickness of the second circuit layer 106.

[0049] A temperature sensor 114 may be provided in the base 101 to facilitate monitoring the temperature in the semiconductor refrigeration module 11 .

[0050] like Figure 3 and Figure 4 As shown, the vacuum insulation shell 12 has a storage space inside, and the thermoelectric module 11 is arranged in the storage space. The storage space is filled with microcapsule phase change material, and the height of the microcapsule phase change material is below the top surface of the first circuit layer 104. Since the thickness of the first circuit layer 104 is large, more microcapsule phase change material can be filled. The microcapsule phase change material can quickly cool down the target to be cooled with a large amount of heat, thereby improving the cooling efficiency of the thermoelectric module 11. At the same time, since the resistance of the thermocouple pair 105 is different, the cooling effect of each thermocouple pair 105 is also different. The microcapsule phase change material can make the temperature at the bottom plate 108 tend to be uniform, so the cooling effect on the target to be cooled is also more uniform.

[0051] The vacuum insulation shell 12 includes: a bottom plate 108, a dam 109, a cover plate 110 and a nano-waterproof coating layer. The bottom plate 108 is used to connect to the target to be cooled. A window 111 is provided on the bottom plate 108. The dam 109 is integrally formed with the bottom plate and is arranged around the periphery of the window 111 and extends in the height direction of the bottom plate 108. The cover plate 110 is connected to the inner wall of the dam 109 to seal the microcapsule phase change material layer in the accommodation space below the cover plate 110. The nano-waterproof coating layer fills the accommodation space above the cover plate 110. The bottom plate 108 and the dam 109 have a vacuum layer inside for thermal insulation. This prevents the thermoelectric module 11 from leaking cold or heat, and enables rapid assembly.

[0052] A rivet post 112 is provided on the bottom plate 108 between the window 111 and the dam 109 , and a corresponding rivet post hole 113 is opened on the base 101 . The rivet post 112 and the rivet post hole 113 are connected by ultrasonic welding to achieve fixation between the semiconductor refrigeration module 11 and the vacuum insulation shell 12 .

[0053] Example 2

[0054] like Figure 5 As shown, a semiconductor refrigeration system includes the semiconductor refrigeration module 1 and the liquid cooling module 2. The semiconductor refrigeration module 1 includes a semiconductor refrigeration module 11 and a vacuum insulation shell 12, and the liquid cooling module 2 includes a jet heat exchange structure 21 and a stepped heat dissipation structure 22.

[0055] like Figure 1 As shown, the semiconductor refrigeration module 1 includes a semiconductor refrigeration module 11 and a vacuum insulation shell 12.

[0056] like Figure 2 and Figure 3 As shown, the semiconductor refrigeration module 11 includes: a base 101 , an insulating layer 102 , a first circuit layer 104 , a plurality of thermocouple pairs 105 and a second circuit layer 106 .

[0057] The insulating layer 102 is connected to the upper surface of the base 101 , the first circuit layer 104 is connected to the upper surface of the insulating layer 102 , the cold ends of the multiple thermocouple pairs 105 are electrically connected to the first circuit layer 104 , and the second circuit layer 106 is electrically connected to the cold ends and hot ends of the thermocouple pairs 105 .

[0058] Because one end of the thermocouple pair 105 is the cold end, used to cool the object being refrigerated, and the other end is the hot end, which generates heat, other heat dissipation devices are typically required to dissipate heat from the hot end. For example, using liquid cooling equipment to cool the end surface of a semiconductor heat dissipation module where the cold end is located, as the liquid flows from one side to the other, one side may have a good cooling effect due to sufficient heat exchange, while the other side may have a poor cooling effect due to the liquid having already heated up.

[0059] To address this issue, in this application, the resistance values ​​of the thermocouple pairs 105 at different locations are arranged based on the thermal finite element analysis results of the external heat sink. The higher the temperature, the greater the resistance value of the corresponding thermocouple pair 105. Thermocouple pairs 105 with different resistance values ​​have different cross-sectional sizes. The greater the resistance value, the smaller the cross-sectional area. The resistance value of the thermocouple pair 105 is gradually distributed from high to low, so that the performance of the thermocouple pair 105 is brought to the extreme. The surface of the thermocouple pair 105 is formed by vapor deposition of acrylic resin material to form a nano-waterproof coating layer, which plays a role in waterproofing, corrosion resistance, and anti-electron migration.

[0060] In other embodiments, an insulation-reinforced composite layer 103 is further provided on the upper surface of the insulation layer 102 , and the first circuit layer 104 is connected to the upper surface of the insulation layer 102 through the insulation-reinforced composite layer 103 .

[0061] The ends of the thermocouple pair 105 are connected to the first circuit layer 104 and the second circuit layer 106 respectively through a eutectic process, so that eutectic layers 107 are formed between the ends of the thermocouple pair 105 and the first circuit layer 104 and the second circuit layer 106 respectively. The thickness of the first circuit layer 104 is more than twice the thickness of the second circuit layer 106.

[0062] A temperature sensor 114 may be provided in the base 101 to facilitate monitoring the temperature in the semiconductor refrigeration module 11 .

[0063] like Figure 3 and Figure 4 As shown, the vacuum insulation shell 12 has a storage space inside, and the thermoelectric module 11 is arranged in the storage space. The storage space is filled with microcapsule phase change material, and the height of the microcapsule phase change material is below the top surface of the first circuit layer 104. Since the thickness of the first circuit layer 104 is large, more microcapsule phase change material can be filled. The microcapsule phase change material can quickly cool down the target to be cooled with a large amount of heat, thereby improving the cooling efficiency of the thermoelectric module 11. At the same time, since the resistance of the thermocouple pair 105 is different, the cooling effect of each thermocouple pair 105 is also different. The microcapsule phase change material can make the temperature at the bottom plate 108 tend to be uniform, so the cooling effect on the target to be cooled is also more uniform.

[0064] The vacuum insulation shell 12 includes: a bottom plate 108, a dam 109, a cover plate 110 and a nano-waterproof coating layer. The bottom plate 108 is used to connect to the target to be cooled. A window 111 is provided on the bottom plate 108. The dam 109 is integrally formed with the bottom plate and is arranged around the periphery of the window 111 and extends in the height direction of the bottom plate 108. The cover plate 110 is connected to the inner wall of the dam 109 to seal the microcapsule phase change material layer in the accommodation space below the cover plate 110. The nano-waterproof coating layer fills the accommodation space above the cover plate 110. The bottom plate 108 and the dam 109 have a vacuum layer inside for thermal insulation. This prevents the thermoelectric module 11 from leaking cold or heat, and enables rapid assembly.

[0065] A rivet post 112 is provided on the bottom plate 108 between the window 111 and the dam 109 , and a corresponding rivet post hole 113 is opened on the base 101 . The rivet post 112 and the rivet post hole 113 are connected by ultrasonic welding to achieve fixation between the semiconductor refrigeration module 11 and the vacuum insulation shell 12 .

[0066] like Figure 6 As shown, the liquid cooling module 2 includes a jet heat exchange structure 21 and a stepped heat dissipation structure 22 .

[0067] like Figure 7As shown, a jet heat exchange structure 21 includes: a micropump 201, a pipeline 202, and a heat exchange cavity 212. The heat exchange cavity 212 has a fluid passage inside. The input end of the heat exchange cavity 212 is connected to the output end of the micropump 201, and the output end of the heat exchange cavity 212 is connected to the pipeline 202 in a one-to-one correspondence.

[0068] Specifically, the fluid pathway includes an inlet cavity 203, a boost cavity 205, a Tesla valve assembly 204, and a second Tesla valve 206. The inlet cavity 203 is connected to the input of the heat exchange cavity 212. Each of the multiple boost cavities 205 is connected to the output of the heat exchange cavity 212 via a forward-connected second Tesla valve 206. The Tesla valve assembly 204 includes multiple first Tesla valves connected in series, each of which is reverse-connected between the inlet cavity 203 and a boost cavity 205.

[0069] The fluid entering the Tesla valve assembly 204 undergoes multiple oscillations and mixing under the action of the reversely connected first Tesla valve, so that the fluid can be evenly heated and at the same time converged in the boost chamber 205 for boosting. The forwardly connected second Tesla valve 206 has a certain acceleration effect. The cooperation between the second Tesla valve 206 and the output end of the small-diameter heat exchange chamber 212 forms a jet, which is then quickly discharged upward through the pipeline 202.

[0070] To ensure efficient heat exchange between heat exchange cavity 212 and the target to be cooled, the jet heat exchange structure 21 also includes a coupling layer 211, connected to one side of heat exchange cavity 212. Coupling layer 211 utilizes a PA target material deposited via vapor phase physical deposition onto the bottom surface of heat exchange cavity 212, forming an ultrathin, flexible insulating film. A boron nitride flaky microcrystal solution is then ultrasonically sprayed onto the surface of the ultrathin flexible insulating film to form a boron nitride film layer. The boron nitride coating is then embedded within the ultrathin flexible insulating film via a vacuum hot pressing process at the Tg temperature of the PA material. The resulting coupling layer 211 is ultrathin, highly insulating, and highly thermally conductive, effectively mitigating thermal stress and material expansion coefficient.

[0071] Typically, the input end of the heat exchange cavity 212 isn't necessarily located at the central axis. Therefore, the present invention designs the inlet cavity 203 to have a larger cross-sectional area the closer it is to the input end of the heat exchange cavity 212. For example, the inlet cavity 203 is trapezoidal, with the input end of the heat exchange cavity 212 connected to the bottom area of ​​the trapezoid. This overcomes the problem of uneven fluid pressure entering each Tesla valve assembly 204.

[0072] Each boost chamber 205 is connected to at least one Tesla valve assembly 204, which collects the fluid output by the Tesla valve assembly 204 and provides a certain degree of pressurization. There are multiple boost chambers 205, arranged along the width of the heat exchange chamber 212. There are three boost chambers 205, with the central boost chamber 205, which has more Tesla valve assemblies 204 connected to it, having a larger volume than the boost chambers 205 on either side.

[0073] like Figure 8 As shown, a stepped heat dissipation structure includes: a stepped flow channel 207, an upper fin 208, a lower fin 209 and a manifold cavity 210.

[0074] The upper surface of the stepped channel 207 is connected to a plurality of upper fins 208, while the lower surface of the stepped channel 207 is connected to a plurality of lower fins 209. The upper fins 208 have extensions extending into the interior of the stepped channel 207. These extensions are spaced a predetermined distance from the lower surface of the stepped channel 207, which can be 1-3 mm. Specifically, the upper fins 208 are connected to the upper surface of each step, with at least two upper fins 208 connected to the upper surface of each step. The height of the ends of the extensions of each upper fin 208 decreases gradually from the highest step to the lowest step.

[0075] The manifold 210 is connected to the lowest step of the stepped flow channel 207 and serves as an output end of the stepped heat dissipation structure connected to the micro pump 201 . The highest step of the stepped flow channel 207 serves as an input end connected to the pipeline 202 .

[0076] The stepped flow channel 207 comprises sequentially connected transverse and longitudinal channels. Fluid enters the stepped flow channel 207 from the topmost step. Each transverse channel includes at least two extensions, allowing the fluid to collide with the extensions of the upper fins 208 on the topmost step. The fluid then flows through the longitudinal channels to the next step due to the liquid level difference, where it continues to collide with the corresponding upper fins 208 in the transverse channels of the next step.

[0077] In other embodiments, each longitudinal flow channel includes at least two extensions, and the fluid will come into contact with the corresponding extension when passing through the longitudinal flow channel.

[0078] To facilitate installation or packaging, the outer ends of the upper fins 208 and the outer ends of the lower fins 209 are flush.

[0079] In the description of this application, it should be understood that the terms "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0080] The above describes specific embodiments of the present invention. It should be understood that the present invention is not limited to the specific embodiments described above, and those skilled in the art may make various changes or modifications within the scope of the claims, which do not affect the essence of the present invention. The embodiments of this application and the features in the embodiments may be combined with each other in any manner unless there is a conflict.

Claims

1. A semiconductor refrigeration module, characterized in that: include: Semiconductor refrigeration module (11) and vacuum insulation shell (12); The vacuum insulation shell (12) has an accommodating space inside; The semiconductor refrigeration module (11) is arranged in the accommodating space, and the accommodating space is filled with microcapsule phase change material, and the filling height of the microcapsule phase change material does not exceed a preset position of the semiconductor refrigeration module (11).

2. The semiconductor refrigeration module according to claim 1, characterized in that: The semiconductor refrigeration module (11) comprises: Base (101); an insulating layer (102) connected to the upper surface of the base (101); A first circuit layer (104) is connected to the upper surface of the insulating layer (102), and the preset position is the upper surface of the first circuit layer (104); A plurality of thermocouple pairs (105), with cold ends electrically connected to the first circuit layer (104); A second circuit layer (106) is electrically connected to the cold end and the hot end of the thermocouple pair (105); The resistance values ​​of the thermocouple pairs (105) at different positions are arranged according to the thermal finite element analysis results of the external heat sink, and the resistance value of the thermocouple pairs (105) corresponding to positions with higher temperatures is greater.

3. The semiconductor refrigeration module according to claim 2, characterized in that: An insulation-enhanced composite layer (103) is further provided on the upper surface of the insulation layer (102), and the first circuit layer (104) is connected to the upper surface of the insulation-enhanced composite layer (103).

4. The semiconductor refrigeration module according to claim 2, characterized in that: The two ends of the thermocouple pair (105) are respectively connected to the first circuit layer (104) and the second circuit layer (106) through a eutectic process to form a eutectic layer (107).

5. The semiconductor refrigeration module according to claim 2, characterized in that: The surface of the thermocouple pair (105) is coated with an acrylic resin material by vapor deposition to form a nano-waterproof coating layer.

6. The semiconductor refrigeration module according to claim 2, characterized in that: A temperature sensor (114) is provided in the base (101).

7. The semiconductor refrigeration module according to claim 2, characterized in that: The thickness of the first circuit layer (104) is more than twice the thickness of the second circuit layer (106).

8. The semiconductor refrigeration module according to claim 2, characterized in that: The vacuum insulation shell (12) comprises: a bottom plate (108), a dam (109), a cover plate (110) and a nano-waterproof coating layer; A window (111) is provided on the bottom plate (108), and the bottom plate (108) is used to connect to a target to be refrigerated; The dam (109) is integrally formed with the bottom plate, is arranged around the periphery of the viewing window (111), and extends in a height direction of the bottom plate (108); The cover plate (110) is connected to the inner wall of the dam (109), and the microcapsule phase change material layer is sealed in the accommodation space below the cover plate (110); A nano waterproof coating layer is filled in the accommodation space above the cover plate (110); The bottom plate (108) and the dam (109) have a vacuum layer inside.

9. The semiconductor refrigeration module according to claim 8, characterized in that: A rivet post (112) is provided on the bottom plate (108) between the window (111) and the dam (109), and a corresponding rivet post hole (113) is opened on the base (101). The rivet post (112) and the rivet post hole (113) are connected by ultrasonic welding.

10. A refrigeration device, characterized in that: The semiconductor refrigeration module comprises the semiconductor refrigeration module according to any one of claims 1 to 9.

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