Power module and electronic system

Abstract

The utility model provides a power module and an electronic system, and the power module comprises a radiator; the insulating substrate is arranged on the radiator; the power chip is arranged on the insulating substrate; and the resistance damping layer is arranged between the radiator and the insulating substrate. According to the power module and the electronic system provided by the utility model, the problem that the effect of suppressing common-mode interference greater than 30MHz on the power module by additionally arranging an EMI filter in the prior art is not ideal is solved.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductors, and in particular relates to a power module and an electronic system. Background Art

[0002] During the high-frequency switching process of the power module, the extremely high switching speed causes a very steep rate of change of voltage and current, which will generate large high-frequency common-mode interference, thus causing EMI (electromagnetic interference) problems. In traditional solutions, EMI filters are usually added to the DC port or AC port of the power module to dampen the high-frequency common-mode interference, such as Figure 1 However, the traditional solution is not ideal for suppressing high-frequency common-mode interference (i.e., common-mode interference greater than 30 MHz). Therefore, how to effectively suppress the high-frequency common-mode interference of the power module is a technical problem that those skilled in the art are eager to solve.

[0003] It should be noted that the above technical background is merely for the purpose of providing a clear and complete description of the technical solutions of the present invention and to facilitate understanding by those skilled in the art. It should not be assumed that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present invention. Utility Model Content

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a power module and an electronic system for solving the problem in the prior art that the common-mode interference suppression effect of the power module greater than 30MHz by adding an EMI filter is not ideal.

[0005] To achieve the above-mentioned and other related purposes, the present invention provides a power module, comprising:

[0006] heat sink;

[0007] an insulating substrate, disposed on the radiator;

[0008] A power chip is provided on the insulating substrate;

[0009] The resistance damping layer is arranged between the heat sink and the insulating substrate.

[0010] Optionally, the power module further includes an intermediate connection layer, which is provided between the heat sink and the resistance damping layer, or between the resistance damping layer and the insulating substrate.

[0011] Optionally, the intermediate connection layer includes a heat conducting layer.

[0012] Optionally, the power module further includes a base plate, which is arranged between the heat sink and the resistance damping layer, or between the resistance damping layer and the insulating substrate.

[0013] Optionally, when the base plate is arranged between the heat sink and the resistance damping layer, the power module further includes a first connection layer and / or a second connection layer, wherein the first connection layer is arranged between the heat sink and the base plate, and the second connection layer is arranged between the base plate and the resistance damping layer or between the resistance damping layer and the insulating substrate.

[0014] Optionally, when the base plate is arranged between the resistance damping layer and the insulating substrate, the power module further includes a first connecting layer and / or a second connecting layer, wherein the first connecting layer is arranged between the heat sink and the resistance damping layer or between the resistance damping layer and the base plate, and the second connecting layer is arranged between the base plate and the insulating substrate.

[0015] Optionally, when the power module includes a first connection layer, the first connection layer includes a heat conductive layer; when the power module includes a second connection layer, the second connection layer includes a welding layer.

[0016] Optionally, the power module further includes a chip connection layer provided between the insulating substrate and the power chip, wherein the power chip includes at least one switching power device.

[0017] Optionally, the resistance damping layer includes a metal film layer or a silicon nitride film layer, and the insulating substrate includes a ceramic substrate with copper cladding on both sides.

[0018] The present invention also provides an electronic system, which includes the power module described in any one of the above items.

[0019] Optionally, the electronic system further includes: an EMI filter, provided at a DC port or an AC port of the power module.

[0020] As described above, the power module and electronic system of the present invention provide an effective solution to the common-mode conduction path (i.e., the third conduction path) caused by the parasitic capacitance of the power module. By adding a resistor damping layer to the power module, the resistor damping layer forms a low-inductance planar film resistor on the third conduction path. This resistor damping layer is connected in series with the module's own parasitic capacitance to produce resonant damping, effectively absorbing high-frequency common-mode interference (i.e., common-mode interference greater than 30MHz), blocking the third conduction path, and thus improving the interference suppression effect. The present invention integrates low-inductance planar film resistors into the power module, which not only helps reduce parasitic parameters, but also helps reduce system volume and is more conducive to resistor heat dissipation. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 The figure shows the structure of an existing power module for suppressing high-frequency common-mode interference.

[0022] Figure 2 Shown is a schematic diagram of the structure of an existing power module.

[0023] Figure 3 Shown is a structural schematic diagram of a power module in the first embodiment of the present utility model.

[0024] Figure 4 Shown is another structural schematic diagram of the power module in the first embodiment of the present utility model.

[0025] Figure 5 Shown is another structural schematic diagram of the power module in the first embodiment of the present utility model.

[0026] Figure 6 Shown is a structural schematic diagram of a power module in the second embodiment of the present utility model.

[0027] Figure 7 Shown is another structural schematic diagram of the power module in the second embodiment of the present utility model.

[0028] Figure 8 Shown is another structural schematic diagram of the power module in the second embodiment of the present utility model.

[0029] Figure 9 Shown is another structural schematic diagram of the power module in the second embodiment of the present utility model.

[0030] Figure 10 Shown is another structural schematic diagram of the power module in the second embodiment of the present utility model.

[0031] Figure 11 Shown is another structural schematic diagram of the power module in the second embodiment of the present utility model.

[0032] Figure 12 Display as Figure 2 The following is a schematic diagram of the common-mode noise test results of the power module used in the main inverter of an electric vehicle.

[0033] Figure 13 Display as Figure 11 The following is a schematic diagram of the common-mode noise test results of the power module used in the main inverter of an electric vehicle.

[0034] Figure 14 Shown is a structural diagram of the electronic system in the third embodiment of the present utility model.

[0035] Figure 15 Shown is another structural schematic diagram of the electronic system in the third embodiment of the present utility model.

[0036] Component number description

[0037] 110 Power Chip

[0038] 120 Insulation substrate

[0039] 130 base plate

[0040] 140 thermal conductive layer

[0041] 150 Radiator

[0042] 200 Power Module

[0043] 210 Radiator

[0044] 220 Insulation substrate

[0045] 221 First Metal Layer

[0046] 222 insulation layer

[0047] 223 Second Metal Layer

[0048] 230 Power Chip

[0049] 231 Switching Power Devices

[0050] 232 bonding wire

[0051] 240 Resistor Damping Layer

[0052] 250 chip connection layer

[0053] 260 Intermediate Connection Layer

[0054] 270 base plate

[0055] 280 First Connection Layer

[0056] 290 Second connection layer

[0057] 300 EMI filter

[0058] 400 DC source or load

[0059] 500 three-phase AC source DETAILED DESCRIPTION

[0060] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different perspectives and applications without departing from the spirit of the present invention.

[0061] See also Figures 1 to 15 It should be noted that the illustrations provided in this embodiment are merely schematic illustrations of the basic concept of the present invention. Therefore, the illustrations only show components related to the present invention and are not drawn according to the number, shape, and size of components in actual implementation. In actual implementation, the form, quantity, and proportion of each component may be arbitrarily changed, and the component layout may also be more complex.

[0062] Figure 1 A traditional solution is shown, which is to add an EMI filter to the DC port or AC port of the power module to dampen and attenuate high-frequency common-mode interference (i.e., common-mode interference greater than 30MHz). However, the effect is not ideal. The applicant analyzed the power module and found that: the common-mode current generated by the power module during the high-frequency switching process has two conduction paths, the DC port and the AC port, and a third conduction path, i.e., the module housing. This conduction path provides a path through the parasitic capacitance of the power module itself (pf level to nf level), thereby degrading the interference suppression effect. The specific analysis is as follows:

[0063] In a conventional power module, the power chip 110 is soldered on an insulating substrate 120, which is in turn soldered on a base plate 130. The base plate 130 is mounted on a heat sink 150 via a heat conducting layer 140. There is a large parasitic capacitance between the two sides of the insulating substrate 120. Figure 2 For low-voltage systems (AC voltage <1000V, DC voltage <1500V), the heat sink is grounded securely. High-frequency common-mode interference generated by traditional power modules forms a common-mode impedance loop with the grounded heat sink through this parasitic capacitance, generating electromagnetic interference to surrounding electronic equipment sharing the same ground. This makes traditional solutions less effective at suppressing high-frequency common-mode interference, reducing system stability and reliability.

[0064] Based on this, the applicant started from the power module and formed a low-inductance planar film resistor on the third conduction path. The low-inductance planar film resistor was connected in series with its own parasitic capacitance to generate resonant damping to effectively absorb high-frequency common-mode interference, blocking the generation of high-frequency common-mode interference at the source, improving the interference suppression effect, and improving the system stability and reliability.

[0065] Example 1

[0066] like Figure 3 As shown, this embodiment provides a power module 200 , including a heat sink 210 , an insulating substrate 220 , a power chip 230 and a resistance damping layer 240 .

[0067] The heat sink 210 is used to dissipate heat from the power module 200. In practical applications, the heat sink 210 mainly dissipates heat from the low-inductance planar film resistor formed by the power chip 230 and the resistor damping layer 240. In one example, the heat sink 210 is a metal heat sink.

[0068] The insulating substrate 220 is disposed on the heat sink 210. From bottom to top, the insulating substrate 220 comprises a first metal layer 221, an insulating layer 222, and a second metal layer 223. The high dielectric constant of the insulating layer 222 results in significant parasitic capacitance within the insulating substrate 220. In practice, the second metal layer 223 can be etched based on specific requirements. In one example, the insulating substrate 220 comprises a ceramic substrate with copper cladding on both sides.

[0069] The power chip 230 is provided on the insulating substrate 220. Specifically, the power chip 230 includes at least one switching power device 231; when the number of the switching power devices 231 is greater than one, the types of the switching power devices 231 can be the same or different. For example, the power chip 230 includes two different types of switching power devices 231, one of which is an insulated gate bipolar transistor (IGBT) and the other is a diode, such as Figure 3 As shown, the right side is the IGBT and the left side is the diode; in addition, when the number of switching power devices 231 is greater than one, at least some of the switching power devices 231 are electrically connected through the bonding wires 232. Of course, it is also feasible to electrically connect all the switching power devices 231 through the bonding wires 232. Even some or all of the switching power devices 231 can also be electrically connected to the second metal layer 223 in the insulating substrate 220 through the bonding wires, which is determined by the specific circuit of the power chip 230.

[0070] Furthermore, the power module 200 also includes a chip connection layer 250, which is arranged between the insulating substrate 220 and the power chip 230. At this time, the power chip 230 is fixed on the insulating substrate 220 through the chip connection layer 250; in one example, the chip connection layer 250 includes a welding layer.

[0071] The resistor damping layer 240 is provided between the heat sink 210 and the insulating substrate 220. The planar film resistor formed by the resistor damping layer 240 has the characteristic of low inductance, so that it is connected in series with the parasitic capacitance in the insulating substrate 220 to generate resonant damping to effectively absorb high-frequency common-mode noise. The resistor damping layer 240 includes a metal film layer or a silicon nitride film layer. Of course, other materials that can be used to make low-inductance planar film resistors are also suitable for this embodiment, and there is no limitation on this. In practical applications, the resistor damping layer 240 can be made using processes such as thin film deposition, sputtering, and gold spraying. In addition, the thickness and resistance of the resistor damping layer 240 can be adjusted according to specific needs to achieve the best absorption effect. This embodiment does not limit this. Designing the resistor damping layer 240 directly in the power module 200 is equivalent to integrating a low-inductance planar film resistor into the power module 200, which is not only beneficial to reducing parasitic parameters, but also beneficial to reducing the system volume and more beneficial to resistor heat dissipation. It should be noted that when manufacturing the resistance damping layer 240 , the thickness should be as thin as possible to minimize the parasitic inductance and avoid a significant impact on the packaging and heat dissipation of the power module 200 .

[0072] In one embodiment, the resistance damping layer 240 is directly fabricated on the heat sink 210. In this case, the power module 200 further includes an intermediate connection layer 260 disposed between the resistance damping layer 240 and the insulating substrate 220. Figure 4 In one example, the intermediate connection layer 260 includes a heat conductive layer or a welding layer. In practical applications, the intermediate connection layer 260 is usually designed to be a heat conductive layer to achieve a fixed connection between the heat sink 250 with the resistance damping layer 240 and the insulating substrate 220 while also optimizing heat dissipation performance.

[0073] In another embodiment, the resistance damping layer 240 is directly made on the insulating substrate 220. In this case, the power module 200 further includes an intermediate connection layer 260, which is provided between the heat sink 210 and the resistance damping layer 240. Figure 5 In one example, the intermediate connection layer 260 includes a heat conductive layer or a welding layer. In practical applications, the intermediate connection layer 260 is usually designed to be a heat conductive layer to achieve a fixed connection between the heat sink 250 and the insulating substrate 220 with the resistance damping layer 240 while also optimizing heat dissipation performance.

[0074] Example 2

[0075] like Figure 6 and Figure 9 As shown, this embodiment provides a power module 200 , including a heat sink 210 , an insulating substrate 220 , a power chip 230 , a resistor damping layer 240 and a bottom plate 270 .

[0076] The heat sink 210 is used to dissipate heat from the power module 200. In practical applications, the heat sink 210 mainly dissipates heat from the low-inductance planar film resistor formed by the power chip 230 and the resistor damping layer 240. In one example, the heat sink 210 is a metal heat sink.

[0077] The insulating substrate 220 is disposed on the heat sink 210. From bottom to top, the insulating substrate 220 comprises a first metal layer 221, an insulating layer 222, and a second metal layer 223. The high dielectric constant of the insulating layer 222 results in significant parasitic capacitance within the insulating substrate 220. In practice, the second metal layer 223 can be etched based on specific requirements. In one example, the insulating substrate 220 comprises a ceramic substrate with copper cladding on both sides.

[0078] The power chip 230 is provided on the insulating substrate 220. Specifically, the power chip 230 includes at least one switching power device 231; when the number of the switching power devices 231 is greater than one, the types of the switching power devices 231 can be the same or different. For example, the power chip 230 includes two different types of switching power devices 231, one of which is an insulated gate bipolar transistor (IGBT) and the other is a diode, such as Figure 6 and Figure 9 As shown, the right side is the IGBT and the left side is the diode; in addition, when the number of switching power devices 231 is greater than one, at least some of the switching power devices 231 are electrically connected through the bonding wires 232. Of course, it is also feasible to electrically connect all the switching power devices 231 through the bonding wires 232. Even some or all of the switching power devices 231 can also be electrically connected to the second metal layer 223 in the insulating substrate 220 through the bonding wires, which is determined by the specific circuit of the power chip 230.

[0079] Furthermore, the power module 200 also includes a chip connection layer 250, which is arranged between the insulating substrate 220 and the power chip 230. At this time, the power chip 230 is fixed on the insulating substrate 220 through the chip connection layer 250; in one example, the chip connection layer 250 includes a welding layer.

[0080] The resistor damping layer 240 is provided between the heat sink 210 and the insulating substrate 220. The planar film resistor formed by the resistor damping layer 240 has the characteristic of low inductance, so that it is connected in series with the parasitic capacitance in the insulating substrate 220 to generate resonant damping to effectively absorb high-frequency common-mode noise. The resistor damping layer 240 includes a metal film layer or a silicon nitride film layer. Of course, other materials that can be used to make low-inductance planar film resistors are also suitable for this embodiment, and there is no limitation on this. In practical applications, the resistor damping layer 240 can be made using processes such as thin film deposition, sputtering, and gold spraying. In addition, the thickness and resistance of the resistor damping layer 240 can be adjusted according to specific needs to achieve the best absorption effect. This embodiment does not limit this. Designing the resistor damping layer 240 directly in the power module 200 is equivalent to integrating a low-inductance planar film resistor into the power module 200, which is not only beneficial to reducing parasitic parameters, but also beneficial to reducing the system volume and more beneficial to resistor heat dissipation. It should be noted that when manufacturing the resistance damping layer 240 , the thickness should be as thin as possible to minimize the parasitic inductance and avoid a significant impact on the packaging and heat dissipation of the power module 200 .

[0081] The bottom plate 270 is provided between the heat sink 210 and the resistance damping layer 240. Figure 6 As shown, at this time, the resistance damping layer 240 is provided between the bottom plate 270 and the insulating substrate 220; or, the bottom plate 270 is provided between the resistance damping layer 240 and the insulating substrate 220, as shown in FIG. Figure 9 As shown, at this time, the resistance damping layer 240 is provided between the heat sink 210 and the bottom plate 270 ; the design of the bottom plate 270 provides structural support for the power module 200 .

[0082] Regarding the case where the bottom plate 270 is disposed between the heat sink 210 and the resistance damping layer 240:

[0083] In one embodiment, the resistance damping layer 240 is directly fabricated on the base plate 270. In this case, the power module 200 further includes a first connection layer 280 and / or a second connection layer 290. For example, the power module 200 only includes the first connection layer 280, or the power module 200 only includes the second connection layer 290, or the power module includes both the first connection layer 280 and the second connection layer 290. When the power module 200 includes the first connection layer 280, the first connection layer 280 is disposed between the heat sink 210 and the base plate 270. In one example, the first connection layer 270 includes a heat conductive layer. When the power module 200 includes the second connection layer 290, the second connection layer 290 is disposed between the resistance damping layer 240 and the insulating substrate 220. In one example, the second connection layer 290 includes a welding layer. Figure 7In practical applications, the power module 200 is usually designed to include both the first connection layer 280 and the second connection layer 290 , which can achieve fixed connection of the entire power module 200 while optimizing heat dissipation performance.

[0084] In another embodiment, the resistance damping layer 240 is directly fabricated on the insulating substrate 220. In this case, the power module 200 further includes a first connection layer 280 and / or a second connection layer 290. For example, the power module 200 only includes the first connection layer 280, or the power module 200 only includes the second connection layer 290, or the power module includes both the first connection layer 280 and the second connection layer 290. When the power module 200 includes the first connection layer 280, the first connection layer 280 is disposed between the heat sink 210 and the base plate 270. In one example, the first connection layer 280 includes a heat conductive layer. When the power module 200 includes the second connection layer 290, the second connection layer 290 is disposed between the base plate 270 and the resistance damping layer 240. In one example, the second connection layer 290 includes a welding layer. Figure 8 In practical applications, the power module 200 is usually designed to include both the first connection layer 280 and the second connection layer 290 , which can achieve fixed connection of the entire power module 200 while optimizing heat dissipation performance.

[0085] Regarding the case where the bottom plate 270 is disposed between the resistance damping layer 240 and the insulating substrate 220:

[0086] In one embodiment, the resistance damping layer 240 is directly fabricated on the heat sink 210. In this case, the power module 200 further includes a first connection layer 280 and / or a second connection layer 290. For example, the power module 200 only includes the first connection layer 280, or the power module 200 only includes the second connection layer 290, or the power module includes both the first connection layer 280 and the second connection layer 290. When the power module 200 includes the first connection layer 280, the first connection layer 280 is disposed between the resistance damping layer 240 and the base plate 270. In one example, the first connection layer 280 includes a heat conductive layer. When the power module 200 includes the second connection layer 290, the second connection layer 290 is disposed between the base plate 270 and the insulating substrate 220. In one example, the second connection layer includes a welding layer. Figure 10 In practical applications, the power module 200 is usually designed to include both the first connection layer 280 and the second connection layer 290 , which can achieve fixed connection of the entire power module 200 while optimizing heat dissipation performance.

[0087] In another embodiment, the resistance damping layer 240 is directly fabricated on the base plate 270. In this case, the power module 200 further includes a first connection layer 280 and / or a second connection layer 290. For example, the power module 200 only includes the first connection layer 280, or the power module 200 only includes the second connection layer 290, or the power module includes both the first connection layer 280 and the second connection layer 290. When the power module 200 includes the first connection layer 280, the first connection layer 280 is disposed between the heat sink 210 and the resistance damping layer 240. In one example, the first connection layer 280 includes a heat conductive layer. When the power module 200 includes the second connection layer 290, the second connection layer 290 is disposed between the base plate 270 and the insulating substrate 220. In one example, the second connection layer 290 includes a welding layer. Figure 11 In practical applications, the power module 200 is usually designed to include both the first connection layer 280 and the second connection layer 290 , which can achieve fixed connection of the entire power module 200 while optimizing heat dissipation performance.

[0088] Below, Figure 11 As an example, compare it with Figure 2 The structure shown in the figure is compared and analyzed. The specific process is as follows: Figure 2 and Figure 11 The power module shown is used in the main inverter of electric vehicles and tested for common mode noise. The test results are shown in Figure 12 and Figure 13 As shown in the figure, Figure 2 The power module shown in the figure is used in the main inverter of electric vehicles. The average common mode noise near 60MHz exceeds the standard by 6dB. Figure 11 In the application of the power module shown in the figure, in the main inverter of an electric vehicle, the average common-mode noise around 60MHz not only does not exceed the standard, but also has an 11dB margin. This shows that the addition of the resistor damping layer 240 in the power module 200 forms a low-inductance planar film resistor on the third conduction path. This resistor damping layer 240 is used in series with the module's own parasitic capacitance to generate resonant damping, effectively absorbing high-frequency common-mode interference (i.e., common-mode interference greater than 30MHz), significantly improving interference suppression.

[0089] Example 3

[0090] like Figure 14 and Figure 15As shown, this embodiment provides an electronic system, including the power module 200 described in the first or second embodiment; further including an EMI filter 300, which is disposed at the DC port or AC port of the power module 200. In one example, the electronic system is a power conversion system, in which case it also includes a DC source or load 400 and a three-phase AC source 500. If the EMI filter 300 is disposed at the DC port of the power module 200, the DC source or load 400 is connected to the DC port of the power module 200 via the EMI filter 300, and the three-phase AC source 500 is connected to the AC port of the power module 200. If the EMI filter 300 is disposed at the AC port of the power module 200, the DC source or load 400 is connected to the DC port of the power module 200, and the three-phase AC source 500 is connected to the AC port of the power module 200 via the EMI filter 300.

[0091] In summary, the power module and electronic system of the present invention provide an effective solution to the common-mode conduction path (i.e., the third conduction path) caused by the parasitic capacitance of the power module. By adding a resistor damping layer to the power module, the resistor damping layer is used to form a low-inductance planar film resistor on the third conduction path and is connected in series with the module's own parasitic capacitance to produce resonant damping to effectively absorb high-frequency common-mode interference (i.e., common-mode interference greater than 30MHz), blocking the third conduction path, and thus improving the interference suppression effect. The present invention integrates low-inductance planar film resistors into the power module, which is not only beneficial for reducing parasitic parameters, but also for reducing the system volume and more conducive to resistor heat dissipation. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.

[0092] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by persons skilled in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A power module, characterized in that: The power module includes: heat sink; an insulating substrate, disposed on the radiator; A power chip is provided on the insulating substrate; A resistance damping layer is provided between the heat sink and the insulating substrate, wherein the resistance damping layer comprises a metal film layer or a silicon nitride film layer, and the resistance damping layer forms a planar film resistor and is connected in series with the parasitic capacitance in the insulating substrate to generate resonance damping.

2. The power module according to claim 1, wherein: The power module further includes an intermediate connection layer, which is provided between the heat sink and the resistance damping layer, or between the resistance damping layer and the insulating substrate.

3. The power module according to claim 2, wherein: The intermediate connection layer includes a heat conducting layer.

4. The power module according to claim 1, wherein: The power module further includes a bottom plate, which is arranged between the heat sink and the resistance damping layer, or between the resistance damping layer and the insulating substrate.

5. The power module according to claim 4, characterized in that: When the base plate is arranged between the heat sink and the resistance damping layer, the power module further includes a first connection layer and / or a second connection layer, wherein the first connection layer is arranged between the heat sink and the base plate, and the second connection layer is arranged between the base plate and the resistance damping layer or between the resistance damping layer and the insulating substrate.

6. The power module according to claim 4, characterized in that: When the base plate is arranged between the resistance damping layer and the insulating substrate, the power module further includes a first connecting layer and / or a second connecting layer, wherein the first connecting layer is arranged between the heat sink and the resistance damping layer or between the resistance damping layer and the base plate, and the second connecting layer is arranged between the base plate and the insulating substrate.

7. The power module according to claim 5 or 6, characterized in that: When the power module includes a first connection layer, the first connection layer includes a heat conductive layer; when the power module includes a second connection layer, the second connection layer includes a welding layer.

8. The power module according to claim 1, wherein: The power module further includes a chip connection layer provided between the insulating substrate and the power chip, wherein the power chip includes at least one switching power device.

9. The power module according to claim 1, wherein: The insulating substrate comprises a ceramic substrate with copper cladding on both sides.

10. An electronic system, characterized in that: The electronic system includes the power module according to any one of claims 1 to 9.

11. The electronic system according to claim 10, wherein: The electronic system further includes an EMI filter, which is provided at a DC port or an AC port of the power module.

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