Deposition device for large-size square mask plate blank

Abstract

The utility model discloses a deposition device for a large-size square mask plate blank. The deposition device comprises a reaction chamber, a mold pool and a mold support, a row of production combustors are installed at the center line position of the top of the reaction chamber, the two sides of each production combustor are each provided with a row of soaking combustors, the mold support is arranged under the mold pool, a movement system is arranged under the mold support, and the movement system is connected with the mold pool. And the driving mechanism is used for driving the die support and the die pool above the die support to move up and down and reciprocate horizontally. The mask plate blank is deposited and grown through the production combustor, the growing face of the mask plate blank is softened and flattened at high temperature through the soaking combustor, the mold pool is driven by the movement system to reciprocate in the horizontal direction, the large-size square mask plate is obtained through one-step deposition, and the large-size square mask plate is directly used for the mask plate after being subjected to appearance machining. The processing links of the procedures of preferential lump manufacturing, machining and material selecting, groove sinking and shape changing and the like are not needed any more, the product preparation procedure is simplified, unnecessary loss of materials is reduced, and cost is saved.

Description

Technical Field

[0001] The utility model relates to the technical field of mask slab deposition, in particular to a deposition device for large-size square mask slabs. Background Art

[0002] The development of the mask industry is primarily influenced by the growth of the downstream flat panel display, semiconductor chip, touchscreen, and circuit board industries. It is closely tied to the development trends of mainstream consumer electronics, laptops, automotive electronics, network communications, home appliances, LED lighting, the Internet of Things, and medical electronics. Masks are gradually moving toward high precision, large sizes, and a full supply chain. Especially since larger LCD TVs began to dominate the mainstream market, their average size has steadily increased by approximately one inch per year. Statistics and forecasts show that shipments of large-size TVs, such as 55-inch, 65-inch, and 70-inch TVs, have been growing annually. This trend toward larger TV sizes has led to a gradual increase in the size of domestic panel substrates, which in turn has directly dictated the larger size of mask products. In 2006, the 8th generation mask size was 850×400mm. However, by 2018, the 10.5th-11th generation mask sizes had reached 1620×1780mm.

[0003] In fields such as flat panel display and semiconductor manufacturing, quartz masks, based on high-purity quartz glass, offer advantages such as high transmittance, high flatness, and a low thermal expansion coefficient, making them commonly used in high-precision mask production. The production process for high-purity quartz substrates is complex, especially for substrates used in high-precision and high-generation semiconductor panels. Large-sized quartz masks are primarily produced using the CVD method, where large-sized round ingots are produced and then subjected to hot and cold processing to obtain the desired product. To obtain large-sized quartz products suitable for practical applications, the synthetic quartz ingots produced by CVD deposition are typically reshaped and homogenized through multiple trough sinking processes to ensure high optical uniformity and large size requirements. Therefore, the deposited quartz ingots must be cut to remove the outer crystallization layer. The ingots are then segmented and selected to obtain a trough sinking masterbatch of sufficient weight. These masterbatches are then repeatedly formed and expanded in a trough sinking furnace to obtain large-sized blanks. These blanks also require trimming and grinding of the upper and lower surfaces, resulting in a complex production process, significant material loss, and high costs. Utility Model Content

[0004] The technical problem to be solved by the present invention is to provide a deposition device for large-sized square mask slabs, wherein a row of production burners and two rows of equalizing burners are arranged on the top of the reaction chamber, respectively, and the mask slab is deposited and grown by the production burners, and the growth surface of the mask slab is softened and flattened at high temperature by the equalizing burners on both sides. During the deposition process, the mold pool is driven to move back and forth in the horizontal direction by the motion system, so that a quartz blank material of a large-sized square mask plate is deposited in one step, and the blank is directly used for the mask plate after being processed in shape, without the need for processing steps such as priority turning, material selection and groove sinking and reshaping, thereby simplifying the product preparation process, reducing unnecessary material loss and saving costs.

[0005] In order to solve the above technical problems, the utility model provides a deposition device for a large-sized square mask blank, comprising a reaction chamber, and a mold pool and a mold support arranged in the reaction chamber;

[0006] A row of production burners is installed at the center line of the top of the reaction chamber, and a row of soaking burners is respectively set on both sides of the production burner, and the two rows of soaking burners are arranged parallel to the center line. The production burners are used to deposit the growth mask slab, and the soaking burners are used to soften and flatten the growth surface of the mask slab at high temperature;

[0007] The mold support is arranged directly below the mold pool, and the two are arranged concentrically to support the mold pool;

[0008] A motion system is provided below the mold support for driving the mold support and the mold pool above it to move up and down and reciprocate in the horizontal direction, and the horizontal movement direction is perpendicular to the center line.

[0009] The utility model deposits the mask slab by feeding the material through a production burner arranged at the center line position of the top of the reaction chamber, reduces the temperature gradient in the horizontal direction of the mold pool by means of heat-averaging burners arranged on both sides of the production burner, softens and melts the surface of the deposited and grown mask slab at high temperature and flattens it, thereby improving the uniformity of the deposited and grown mask slab and ensuring its high optical uniformity; further, the horizontal reciprocating drive of the motion system is used to effectively expand the reaction surface and the melting surface of the deposited mask slab, and deposits large-sized square mask slabs in one step, which can be directly used in the mask plate industry after being processed in shape, and can be sliced ​​to obtain large-sized mask substrates; there is no need to go through the process steps of priority turning, material selection and groove sinking and reshaping, thus saving product preparation steps, reducing unnecessary material loss, saving costs and improving production efficiency. Compared with the traditional single-lamp deposition method, the production efficiency is improved by more than 300%.

[0010] Furthermore, the mold pool has a horizontal reciprocating range of ±d, a horizontal width of 2d, and a spacing of (1-2)d between the two rows of equalizing burners, where 400mm≤d≤600mm. Initially, the centerline of the mold pool is directly below a row of production burners.

[0011] Furthermore, the width of the mold pool perpendicular to the horizontal moving direction is 500-1500 mm.

[0012] Furthermore, the number of the production burners is an odd number ≥3, such as 3, 5, 7, 9, etc., and the production burner located in the middle is set at the center point of the center line of the reaction chamber, and the number and distribution of the uniform heat burners are consistent with those of the production burners.

[0013] Furthermore, a plurality of air supply ports are evenly distributed at the bottom of the reaction chamber for introducing filtered air; a plurality of waste outlets are evenly distributed circumferentially on the side of the reaction chamber for discharging waste gas; and a furnace outlet is provided at the lower part of the side of the reaction chamber for entering and exiting the mold pool.

[0014] Furthermore, a furnace door is provided at the furnace outlet, and the furnace door is closed during the production process.

[0015] Furthermore, the reaction chamber is a closed chamber that provides a growth space area for the deposition reaction; the materials of the reaction chamber and the mold pool are high-purity refractory materials, such as alumina, which have good thermal shock resistance and strength properties.

[0016] Furthermore, the lamp mouth ends of the production burner and the soaking burner extend into the reaction chamber by 5-10 mm.

[0017] Furthermore, the installation angle of the production burner and the soaking burner is 85°-90° with the horizontal plane.

[0018] The working method of the deposition device of the large-size square mask blank comprises the following steps:

[0019] S1, preparation stage: air is introduced through the air supply port, and nitrogen is introduced through the production burner and the soaking burner for purging;

[0020] S2, waiting for production stage: switch the production burner to hydrogen spray, and then switch to hydrogen and oxygen spray after ignition. When the furnace temperature rises to above 200℃, switch the soaking burner to hydrogen and oxygen spray;

[0021] S3, production stage: When the furnace temperature rises to the deposition temperature, silicon tetrachloride is introduced through the production burner, and the original hydrogen and oxygen are maintained. The quartz mask slab is deposited and grown in the mold pool. The motion system is started, and the mold pool begins to move horizontally back and forth and descend synchronously;

[0022] S4, production end stage: stop the introduction of silicon tetrachloride, wait until the upper surface of the quartz mask slab in the mold pool is burned flat, stop the introduction of hydrogen and oxygen into the production burner and the soaking burner, and turn off the motion system at the same time;

[0023] S5, furnace discharge stage: when the furnace temperature drops below 100°C, the furnace discharge port is opened, and the horizontal movement of the motion system is started to move the mold pool out of the reaction chamber, and the quartz mask slab is separated.

[0024] Furthermore, in S1, the flow rate of the air introduced into the air supply port is 2.5±0.5 m / s; in S3, the deposition temperature is 1300±50°C, and the flow rate of silicon tetrachloride is 10 L / min.

[0025] Furthermore, a constant lamp distance of 250-350 mm is maintained between the bottom end of the production burner torch and the deposition growth surface in the mold pool, and the horizontal movement speed of the mold pool is 1-25 mm / s.

[0026] Furthermore, the quartz mask slab is cold worked to remove the surface layer, and then sliced ​​and finely processed to obtain a quartz mask substrate.

[0027] Beneficial effects of the utility model:

[0028] The utility model deposits the mask slab by feeding materials through a production burner arranged at the center line position of the top of the reaction chamber, reduces the temperature gradient in the horizontal direction of the mold pool through the heat-averaging burners arranged on both sides of the production burner, and softens, melts and flattens the surface of the deposited and grown mask slab at high temperature, thereby improving the uniformity of the deposited and grown mask slab and ensuring its high optical uniformity.

[0029] The utility model further uses the horizontal reciprocating drive of the motion system to effectively expand the reaction surface and the melting surface of the deposited mask slab, and deposits a large-sized square mask slab in one step. After the mask slab is processed in shape, it can be directly used in the mask plate industry, and large-sized mask substrates can be obtained by slicing.

[0030] The utility model has a simple process and does not require the processing steps of priority ingot making, material selection, and trough sinking and shaping, which saves product preparation steps, reduces unnecessary material loss, saves costs, and improves production efficiency. Compared with the traditional single-lamp deposition method, the production efficiency is increased by more than 300%. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 This is a schematic diagram of the deposition device structure of a large-size square mask blank of the utility model. Figure 1 ;

[0032] Figure 2 This is a schematic diagram of the deposition device structure of a large-size square mask blank of the utility model. Figure 2 ;

[0033] Figure 3 This is the distribution diagram of the production burner and the heat-saturating burner on the top of the reaction chamber of the utility model;

[0034] Explanation of the numbers in the figure: 1. Reaction chamber, 2. Mold pool, 3. Mold support, 4. Production burner, 5. Heat-saturating burner, 6. Mask slab, 7. Movement system, 8. Air supply port, 9. Waste outlet, 10. Furnace outlet. DETAILED DESCRIPTION

[0035] The present invention will be further described below in conjunction with specific embodiments so that those skilled in the art can better understand the present invention and implement it, but the embodiments are not intended to limit the present invention.

[0036] refer to Figure 1-3 This embodiment provides a deposition device for a large-size square mask blank, comprising a reaction chamber 1, a mold pool 2, and a mold holder 3 arranged in the reaction chamber 1; a row of production burners 4 is installed at the center line position of the top of the reaction chamber 1, and a row of uniform heat burners 5 is respectively arranged on both sides of the production burner 4, and the two rows of uniform heat burners 5 are arranged parallel to the center line, as shown in FIG. Figure 3 As shown, the production burner 4 is used to deposit the growth mask slab 6, and the heat-equalizing burner 5 is used to soften and flatten the growth surface of the mask slab 6 at high temperature; the mold holder 3 is arranged directly below the mold pool 2, and the two are arranged concentrically to support the mold pool 2; a motion system 7 is arranged below the mold holder 3 to drive the mold holder 3 and the mold pool 2 above it to move up and down and reciprocate horizontally, and the horizontal movement direction is perpendicular to the center line. During the deposition process, the mold pool 2 continues to descend under the drive of the motion system 7 to ensure that the bottom end of the production burner 4 lamp mouth maintains a constant lamp distance from the deposition growth surface, and the horizontal reciprocating movement facilitates the expansion of the deposition reaction surface and the melting surface. The motion system 7 for achieving vertical and horizontal movement is a conventional means for those skilled in the art. Optionally, a vertical drive mechanism can be set at the bottom of the mold holder 3, and the vertical drive mechanism can be installed on the horizontal drive mechanism to achieve horizontal and vertical movement of the mold holder 3 and the mold pool 2 above it.

[0037] In this embodiment, a production burner 4 arranged at the top center line position of the reaction chamber 1 is used to deposit and produce a mask slab 6. The uniform heat burners 5 arranged on both sides of the production burner 4 reduce the temperature gradient in the horizontal direction of the mold pool 2, and the surface of the deposited and grown mask slab 6 is softened, melted and flattened at high temperature, thereby improving the uniformity of the deposited and grown mask slab 6 and ensuring its high optical uniformity. Furthermore, the horizontal reciprocating drive of the motion system 7 effectively expands the reaction surface and the melting surface of the deposited mask slab 6, and a large-sized square mask slab 6 is deposited in one step. After the mask slab 6 is processed in shape, it can be directly used in the mask plate industry, and a large-sized mask substrate can be obtained by slicing. There is no need to go through the process steps of priority turning, material selection and groove sinking and reshaping, which saves product preparation steps, reduces unnecessary material loss, saves costs and improves production efficiency. Compared with the traditional single-lamp deposition method, the production efficiency is improved by more than 300%.

[0038] Specifically, the interval of the reciprocating movement of the mold pool 2 in the horizontal direction is ±d, the width of the mold pool 2 in the horizontal movement direction is 2d, and the spacing between the two rows of uniform heat burners 5 is (1-2)d, wherein 400mm≤d≤600mm. In the initial state, the center line of the mold pool 2 is located directly below a row of production burners 4. The value of d can be selected according to actual needs. In this embodiment, d=500mm. At the same time, the width of the mold pool 2 perpendicular to the horizontal movement direction is 500-1500mm, which can be adjusted according to actual needs. In this embodiment, the width of the mold pool 2 perpendicular to the horizontal movement direction is 500mm.

[0039] Preferably, the number of the production burners 4 is an odd number ≥3, such as 3, 5, 7, 9, etc. In this embodiment, the number of the production burners 4 is 5, and the production burner 4 located in the middle is arranged at the center point of the center line of the reaction chamber 1, and the number and distribution of the uniform heat burners 5 are consistent with those of the production burners 4.

[0040] Specifically, a number of air supply ports 8 are evenly distributed at the bottom of the reaction chamber 1 for introducing filtered air; a number of waste outlets 9 are evenly distributed circumferentially on the side of the reaction chamber 1 for discharging waste gas; a furnace outlet 10 is provided at the lower part of the side of the reaction chamber 1 for entering and exiting the mold pool 2; a furnace door is provided at the furnace outlet 10, and the furnace door is closed during the production process; the reaction chamber 1 is a closed chamber, which provides a growth space area for the deposition reaction; the materials of the reaction chamber 1 and the mold pool 2 are high-purity refractory materials, such as alumina, which have good thermal shock resistance and strength properties.

[0041] Preferably, the lamp end portions of the production burner 4 and the uniform heat burner 5 extend into the reaction chamber 1 by 5-10 mm; the installation angles of the production burner 4 and the uniform heat burner 5 are 85°-90° to the horizontal plane, and the installation angles of the production burner 4 and the uniform heat burner 5 can be adjusted according to actual needs, wherein the installation angles of the middle production burner 4 and the uniform heat burner 5 are 90° to the horizontal plane, and the installation angles of the production burners 4 and the uniform heat burners 5 on both sides are symmetrically arranged.

[0042] The operating method of the deposition device for a large-size square mask blank in this embodiment includes the following steps:

[0043] S1, preparation stage: air is introduced through the air supply port 8, and nitrogen is purged through the production burner 4 and the soaking burner 5;

[0044] S2, waiting for production: switch the production burner 4 to hydrogen spray, ignite it and then switch to hydrogen and oxygen spray. When the furnace temperature rises to above 200 ° C, switch the soaking burner 5 to hydrogen and oxygen spray;

[0045] S3, Production Stage: After the furnace temperature reaches the deposition temperature, silicon tetrachloride is introduced through the production burner 4, and the original flow of hydrogen and oxygen is maintained. The quartz mask slab 6 is deposited and grown in the mold pool 2. After half an hour, a raised mountain-like strip of material is evenly distributed at the center line of the bottom of the mold pool 2. The motion system 7 is activated, and the mold pool 2 begins to move horizontally back and forth and descend synchronously;

[0046] S4, production end stage: After 10 days, stop the introduction of silicon tetrachloride, wait until the upper surface of the quartz mask slab 6 in the mold pool 2 is burned flat (burning time 3 hours), and then introduce hydrogen and oxygen into the production burner 4 and the soaking burner 5, and at the same time shut down the motion system 7;

[0047] S5, furnace discharge stage: when the furnace temperature drops below 100° C., the furnace discharge port 10 is opened, and the horizontal movement of the motion system 7 is started to move the mold pool 2 out of the reaction chamber 1, and the quartz mask slab 6 is separated.

[0048] Specifically, in S1, the flow rate of the air introduced into the air supply port 8 is 2.5±0.5 m / s, and in S3, the deposition temperature is 1300°C.

[0049] Specifically, a constant lamp distance of 250-350 mm is maintained between the bottom end of the production burner 4 and the deposition growth surface in the mold pool 2, and the horizontal movement speed of the mold pool 2 is 1-25 mm / s.

[0050] Preferably, the quartz mask plate blank 6 is cold worked to remove the defective surface layer according to the required size of the mask plate to obtain a defect-free square quartz mask plate, which is then sliced ​​and finely processed to obtain a quartz mask substrate for a photomask.

[0051] In summary, the present invention deposits the mask slab by feeding the material through a production burner arranged at the center line position of the top of the reaction chamber, reduces the temperature gradient in the horizontal direction of the mold pool by means of the heat-averaging burners arranged on both sides of the production burner, and softens and melts the surface of the deposited and grown mask slab at high temperature to flatten it, thereby improving the uniformity of the deposited and grown mask slab and ensuring its high optical uniformity. The present invention further uses the horizontal reciprocating drive of the motion system to effectively expand the reaction surface and the melting surface of the deposited mask slab, deposits large-sized square mask slabs in one step, and can be directly used in the mask plate industry after the mask slabs are processed in shape, and can be sliced ​​to obtain large-sized mask substrates. The present invention has a simple process and does not require the processing steps of priority milling, material selection, and groove sinking and reshaping, thereby saving product preparation steps, reducing unnecessary material loss, saving costs, and improving production efficiency. Compared with the traditional single-lamp deposition method, the production efficiency is increased by more than 300%.

[0052] The above-described embodiments are merely preferred embodiments for the purpose of fully illustrating the present invention, and the scope of protection of the present invention is not limited thereto. Equivalent substitutions or modifications made by those skilled in the art based on the present invention are within the scope of protection of the present invention. The scope of protection of the present invention shall be subject to the claims.

Claims

1. A deposition device for large-size square mask blanks, characterized in that: It includes a reaction chamber, a mold pool and a mold support arranged in the reaction chamber; A row of production burners is installed at the center line of the top of the reaction chamber, and a row of soaking burners is respectively set on both sides of the production burner, and the two rows of soaking burners are arranged parallel to the center line. The production burners are used to deposit the growth mask slab, and the soaking burners are used to soften and flatten the growth surface of the mask slab at high temperature; The mold support is arranged directly below the mold pool and is used to support the mold pool; A motion system is provided below the mold support for driving the mold support and the mold pool above it to move up and down and reciprocate horizontally, and the horizontal movement direction is perpendicular to the center line of the top of the reaction chamber.

2. The deposition device for a large-size square mask blank according to claim 1, wherein: The interval of the mold pool's horizontal reciprocating movement is ±d, the width of the mold pool in the horizontal moving direction is 2d, and the spacing between the two rows of uniform heat burners is (1-2)d, wherein 400mm≤d≤600mm.

3. The deposition device for large-size square mask blanks according to claim 1, characterized in that: The width of the mold pool perpendicular to the horizontal moving direction is 500-1500 mm.

4. The deposition device for a large-size square mask blank according to claim 1, wherein: The number of the production burners is an odd number ≥3, and the production burner located in the middle is arranged at the center point of the center line of the top of the reaction chamber.

5. The deposition device for large-size square mask blanks according to claim 4, characterized in that: The number and distribution of the soaking burners are consistent with those of the production burners.

6. The deposition device for a large-size square mask blank according to claim 1, wherein: A plurality of air supply ports are evenly distributed at the bottom of the reaction chamber.

7. The deposition device for a large-size square mask blank according to claim 1, wherein: The lamp mouth ends of the production burner and the soaking burner extend into the reaction chamber by 5-10 mm.

8. The deposition device for a large-size square mask blank according to claim 1, wherein: The installation angle of the production burner and the soaking burner is 85°-90° with the horizontal plane.

9. The deposition device for a large-size square mask blank according to claim 1, wherein: A furnace outlet is provided at the lower portion of the side surface of the reaction chamber, and a furnace door is provided at the furnace outlet.

10. The deposition device for a large-size square mask blank according to claim 1, wherein: A plurality of waste outlets are evenly distributed in a circumferential direction on the side of the reaction chamber.

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