Temperature control device of power device and power module assembly with same

Abstract

The utility model provides a temperature control device of a power device and a power module assembly with the same, and the temperature control device of the power device comprises a semiconductor chilling plate which is provided with a first end plate and a second end plate which are oppositely arranged, and the power device is arranged on the first end plate; the refrigeration circuit is connected to the two ends of the semiconductor refrigeration sheet and is provided with a power supply, and the power supply can supply power to the semiconductor refrigeration sheet so that the semiconductor refrigeration sheet can dissipate heat for the power device; the charging circuit is connected to the two ends of the semiconductor chilling plate and provided with a charging power source, and the semiconductor chilling plate can charge the charging power source; the switching element is electrically connected with the refrigeration circuit and the charging circuit; and the controller is electrically connected with the refrigeration circuit, the charging circuit and the switching element and controls the working state of the switching element. According to the technical scheme, the problem that an existing cooling mode in the related technology is difficult to meet the heat dissipation requirement of the power device can be effectively solved.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor devices, in particular to a temperature control device for a power device and a power module assembly having the same. Background Art

[0002] Advances in semiconductor technology have led to continuous reductions in device size, and power semiconductor packaging is moving towards higher power density. In traditional power module structures, the baseplate is connected to the heat sink via a thermal coupling agent and cooled by air or water. As power device voltage levels and the power density of packaged modules continue to increase, heat dissipation becomes increasingly important. Traditional cooling methods are no longer sufficient to meet these requirements, resulting in reduced package reliability.

[0003] Power modules utilize a variety of packaging materials, each with varying coefficients of thermal expansion. This can lead to varying degrees of deformation and thermal stress accumulation in power devices, ultimately causing failures such as wire bond detachment, solder delamination, and plastic encapsulation cracking and delamination. Rising temperatures can also degrade device performance, impacting current carrying capacity and gate voltage. Within the limited packaging space, efficiently dissipating the dissipated heat from power devices to the external environment in a timely manner to reduce device junction temperature and the operating temperature of the various packaging materials within the module has become a key consideration during the current power device packaging design phase. Therefore, heat dissipation is a critical technology, and its performance directly impacts product performance and lifespan. Utility Model Content

[0004] The main purpose of the present invention is to provide a temperature control device for a power device and a power module assembly having the same, so as to solve the problem in the related art that the existing cooling method is difficult to meet the heat dissipation requirements of the power device.

[0005] In order to achieve the above-mentioned purpose, according to one aspect of the present invention, a temperature control device for a power device is provided, comprising: a semiconductor refrigeration plate having a first end plate and a second end plate arranged opposite to each other, and a power device arranged on the first end plate; a refrigeration circuit, connected to both ends of the semiconductor refrigeration plate and having a power supply, the power supply can supply power to the semiconductor refrigeration plate so that the semiconductor refrigeration plate can dissipate heat for the power device; a charging circuit, connected to both ends of the semiconductor refrigeration plate and having a charging power supply, the semiconductor refrigeration plate can charge the charging power supply; a switching element, electrically connected to both the refrigeration circuit and the charging circuit and capable of controlling one of the refrigeration circuit and the charging circuit to be conductive or controlling both the refrigeration circuit and the charging circuit to be non-conductive; a controller, electrically connected to the refrigeration circuit, the charging circuit and the switching element, and controlling the working state of the switching element.

[0006] Furthermore, the temperature control device also includes a temperature measuring element, which is arranged on the power device and connected to the controller signal. The controller controls the working state of the switching element according to the temperature measurement signal of the temperature measuring element.

[0007] Furthermore, the controller includes a comparator, which can compare the temperature of the power device with a preset temperature. The controller controls the switching element to turn on the cooling circuit or the charging circuit according to the comparison result of the comparator.

[0008] Furthermore, the switching element includes a first relay, which has a first disconnected state, a first conductive state and a second conductive state. When the first relay is in the first conductive state, the refrigeration circuit is conductive, and when the first relay is in the second conductive state, the charging circuit is conductive.

[0009] Furthermore, a second relay is provided in the refrigeration circuit, and the second relay has a second disconnect state and a third conduction state. When the temperature control device is powered on, the second relay switches from the second disconnect state to the third conduction state; and / or, a third relay is provided in the charging circuit, and the third relay has a third disconnect state and a fourth conduction state. When the temperature control device is powered on, the third relay switches from the third disconnect state to the fourth conduction state.

[0010] Furthermore, the temperature control device also includes a radiator connected to the second end plate.

[0011] According to another aspect of the present invention, a power module assembly is provided, comprising a power device and a temperature control device, wherein the temperature control device is the above-mentioned temperature control device.

[0012] Furthermore, the power device includes a substrate, a power chip, a cover and lead terminals, the power chip and the lead terminals are arranged on the substrate, the substrate is arranged on the first end plate, the cover is arranged on the first end plate and covers the periphery of the substrate and the power chip, and the lead terminals extend outward from the cover.

[0013] Furthermore, the power device includes a power chip, a cover and lead terminals, the power chip and the lead terminals are arranged on the first end plate, the cover is arranged on the first end plate and covers the periphery of the power chip, and the lead terminals extend outward from the cover.

[0014] Furthermore, a conductive metal layer is provided on the first end plate, and the power chip and the lead terminals are connected to the conductive metal layer.

[0015] According to the technical solution of the present invention, a temperature control device includes a semiconductor refrigeration plate and a refrigeration circuit. The power device is arranged on the first end plate of the semiconductor refrigeration plate. The temperature control device also includes a refrigeration circuit. The refrigeration circuit is connected to both ends of the semiconductor refrigeration plate and has a power supply. The power supply can supply power to the semiconductor refrigeration plate so that the semiconductor refrigeration plate can work to dissipate heat for the power device. The semiconductor refrigeration plate does not require any refrigerant when working, and the thermal inertia of the semiconductor refrigeration plate is very small. The cooling and heating time is very fast. It can achieve clean, efficient and miniaturized heat dissipation for the power device, effectively reduce the operating temperature of the power device and the packaging structure, meet the heat dissipation requirements of the power device, improve the efficiency of the power device and the reliability of the power device packaging. The temperature control device also includes a charging circuit. The charging circuit is connected to both ends of the semiconductor refrigeration plate and can use the heat at both ends of the semiconductor refrigeration plate to charge the charging power supply, thereby realizing efficient energy utilization. Under the control of the controller, the switching element can make one of the cooling circuit and the charging circuit conductive or both conductive, thereby achieving the goal of using the semiconductor cooling plate to dissipate heat from the power device when the power device is operating, or using the heat difference generated by the semiconductor cooling plate due to the heat generated by the power device when the power device is operating to charge the charging power supply. This fully utilizes the heat generated by the semiconductor cooling plate and the power device during operation, improving energy utilization. Therefore, the technical solution of this application can effectively solve the problem that existing cooling methods in related technologies cannot meet the heat dissipation requirements of power devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The drawings constituting part of this application are provided to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are provided to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0017] Figure 1 Shows a circuit diagram of an embodiment of a temperature control device according to the present utility model;

[0018] Figure 2 A schematic three-dimensional structure diagram showing a partial structure of a first embodiment of a power module assembly according to the present utility model;

[0019] Figure 3 Shown Figure 2 Schematic diagram of the exploded structure of the power module assembly;

[0020] Figure 4 A schematic diagram of an exploded structure of a portion of the structure of a second embodiment of a power module assembly according to the present utility model is shown;

[0021] Figure 5 Shown Figure 4Schematic diagram of the three-dimensional structure of the semiconductor cooling sheet, power chip, lead terminal, conductive metal layer and bonding wire of the power module component.

[0022] The above drawings include the following reference numerals:

[0023] 10. Semiconductor cooling plate; 11. First end plate; 12. Second end plate; 13. Terminal; 14. Metal layer;

[0024] 20. Refrigeration circuit; 21. Power supply; 22. Second relay;

[0025] 30. Charging circuit; 31. Charging power supply; 32. Third relay;

[0026] 40. Switching element;

[0027] 50. Controller;

[0028] 60. Temperature measuring parts;

[0029] 70. Radiator;

[0030] 81. Substrate; 811. Board body; 812. Conductive layer; 82. Power chip; 83. Cover; 831. Enclosure; 832. Top plate; 84. Lead terminals; 85. Conductive metal layer; 86. Packaging colloid; 87. Bonding wires. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is in no way intended to limit the present invention and its application or use. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0032] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, they indicate the presence of features, steps, operations, devices, components and / or combinations thereof.

[0033] Unless otherwise specifically stated, the relative arrangement of the parts and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to actual proportional relationships. The technology, methods and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, methods and equipment should be considered as part of the specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of the exemplary embodiments may have different values. It should be noted that similar numbers and letters represent similar items in the following figures, and therefore, once an item is defined in one figure, it does not need to be further discussed in subsequent figures.

[0034] like Figure 1 As shown, the present application provides a temperature control device for a power device. An embodiment of the temperature control device of the present application includes: a semiconductor refrigeration chip 10, a cooling circuit 20, a charging circuit 30, a switching element 40, and a controller 50. The semiconductor refrigeration chip 10 has a first end plate 11 and a second end plate 12 disposed opposite each other, and the power device is disposed on the first end plate 11. The cooling circuit 20 is connected to both ends of the semiconductor refrigeration chip 10 and has a power supply 21. The power supply 21 can supply power to the semiconductor refrigeration chip 10 so that the semiconductor refrigeration chip 10 dissipates heat for the power device. The charging circuit 30 is connected to both ends of the semiconductor refrigeration chip 10 and has a charging power supply 31. The semiconductor refrigeration chip 10 can supply power to the charging power supply 31. The switching element 40 is electrically connected to both the cooling circuit 20 and the charging circuit 30 and can control one of the cooling circuit 20 and the charging circuit 30 to be conductive or to control both the cooling circuit 20 and the charging circuit 30 to be non-conductive. The controller 50 is electrically connected to the cooling circuit 20, the charging circuit 30, and the switching element 40 and controls the operating state of the switching element 40.

[0035] Using the technical solution of this embodiment, a temperature control device includes a semiconductor refrigeration chip 10 and a cooling circuit 20. A power device is disposed on a first end plate 11 of the semiconductor refrigeration chip 10. The temperature control device also includes a cooling circuit 20 connected to both ends of the semiconductor refrigeration chip 10 and having a power supply 21. The power supply 21 is capable of supplying power to the semiconductor refrigeration chip 10, enabling the semiconductor refrigeration chip 10 to dissipate heat for the power device. The semiconductor refrigeration chip 10 does not require any refrigerant during operation, has very low thermal inertia, and offers fast cooling and heating times. This enables clean, efficient, and compact cooling of the power device, effectively reducing the operating temperature of the power device and its packaging structure, meeting the heat dissipation requirements of the power device, and improving both power device efficiency and the reliability of the power device packaging. The temperature control device also includes a charging circuit 30 connected to both ends of the semiconductor refrigeration chip 10 and utilizing heat from the semiconductor refrigeration chip 10 to charge the charging power supply 31, thereby achieving efficient energy utilization. Under the control of the controller 50, the switching element 40 can enable one of the cooling circuit 20 and the charging circuit 30 to be conductive, or disable both the cooling circuit 20 and the charging circuit 30. This allows the semiconductor cooling plate 10 to dissipate heat from the power device when the power device is operating, or the charging power source 31 to be charged by utilizing the heat difference generated by the semiconductor cooling plate 10 due to the heat generated by the power device when the power device is operating. This fully utilizes the heat generated by the semiconductor cooling plate 10 and the power device during operation, thereby improving energy utilization. Therefore, the technical solution of this embodiment can effectively solve the problem that existing cooling methods in the related art cannot meet the heat dissipation requirements of power devices.

[0036] In addition to the advantages mentioned above, the semiconductor refrigeration plate 10 has low production cost, can work continuously, is clean and efficient, has no pollution source, has no vibration or noise during operation, has a long service life, and is easy to install.

[0037] Specifically, the semiconductor refrigeration chip 10 utilizes the Peltier effect of semiconductor materials. When direct current passes through a galvanic couple formed by two different semiconductor materials connected in series, heat is absorbed and released at both ends of the galvanic couple, respectively, achieving negative thermal resistance refrigeration technology. The end that absorbs heat is the cooling surface, and the end that releases heat is the heating surface. When the power module is operating and the cooling circuit 20 is turned on, the semiconductor refrigeration chip 10 operates, and the cooling surface of the semiconductor refrigeration chip 10 is connected to the power device, absorbing heat transferred from the power device.

[0038] like Figure 3As shown, multiple galvanic couples formed of semiconductor material are arranged in series and located between a first end plate 11 and a second end plate 12. The semiconductor refrigeration plate 10 also includes two terminal terminals 13 connected to both ends of the multiple galvanic couples to connect the semiconductor refrigeration plate 10 to the cooling circuit 20 and the charging circuit 30. A metal layer 14 is also provided on the first end plate 11 for connection to the power device.

[0039] Specifically, when the refrigeration circuit 20 is turned on, the first end plate 11 serves as the cold end plate of the semiconductor refrigeration plate 10, and the second end plate 12 serves as the hot end plate of the semiconductor refrigeration plate 10, thereby realizing heat dissipation for the power device; when the charging circuit 30 is working, the first end plate 11 is arranged close to the power device so that the temperature of the first end plate 11 is higher, and the second end plate 12 is far away from the power device so that the temperature of the second end plate 12 is lower. There is a temperature difference between the first end plate 11 and the second end plate 12, and the temperature difference and the electric couple formed in series by two different semiconductor materials are used to charge the charging power supply 31.

[0040] like Figure 1 As shown, the temperature control device further includes a temperature measuring element 60, which is disposed on the power device and is signal-connected to the controller 50. The controller 50 controls the operating state of the switching element 40 based on the temperature measurement signal from the temperature measuring element 60. The temperature measuring element 60 can measure the operating temperature of the power device in real time and control the operating state of the switching element 40 based on the temperature of the power device, achieving precise control.

[0041] The temperature measuring element 60 may be a temperature measuring resistor integrated on a power device or an infrared temperature measuring element.

[0042] In this embodiment, the controller 50 includes a comparator that can compare the temperature of the power device with a preset temperature. Based on the comparison result of the comparator, the controller 50 controls the switching element 40 to turn on the cooling circuit 20 or the charging circuit 30. Specifically, when the comparison result shows that the temperature of the power device is less than or equal to the preset temperature, indicating that the temperature of the power device is within a reasonable range, the switching element 40 turns on the charging circuit 30 and turns off the cooling circuit 20. When the comparison result shows that the temperature of the power device is greater than the preset temperature, indicating that the temperature of the power device is too high, the switching element 40 turns off the charging circuit 30 and turns on the cooling circuit 20.

[0043] The above-mentioned preset temperature can be set according to the specific conditions of the power device and is not limited in this embodiment.

[0044] like Figure 1As shown, the switching element 40 includes a first relay, which has a first disconnected state, a first conductive state, and a second conductive state. When the first relay is in the first conductive state, the cooling circuit 20 is conductive, and when the first relay is in the second conductive state, the charging circuit 30 is conductive. The first relay has an interface 0 and an interface 1. When the first relay is disconnected (i.e., in the first disconnected state), both the cooling circuit 20 and the charging circuit 30 are disconnected. When the first relay is connected to interface 0, the first relay is in the first conductive state, and the cooling circuit 20 is conductive. When the first relay is connected to interface 1, the first relay is in the second conductive state, and the charging circuit 30 is in operation.

[0045] like Figure 1 As shown, a second relay 22 is provided in the refrigeration circuit 20, and the second relay 22 has a second disconnection state and a third conduction state. When the temperature control device is powered on, the second relay 22 switches from the second disconnection state to the third conduction state; a third relay 32 is provided in the charging circuit 30, and the third relay 32 has a third disconnection state and a fourth conduction state. When the temperature control device is powered on, the third relay 32 switches from the third disconnection state to the fourth conduction state.

[0046] like Figure 1 As shown, the controller 50 has a control interface DO0 and a control interface DO1. The control interface DO1 controls the closing and opening of the second relay 22 and the third relay 32. When the temperature control device is operating, the control interface DO1 controls the closing of the second relay 22 and the third relay 32. The controller 50 receives the junction temperature of the power device measured by the temperature measuring element 60. When the junction temperature of the power device exceeds the preset temperature, the controller 50 starts the cooling program. The first relay connects to interface 0, and the power supply 21 supplies power to the semiconductor refrigeration chip 10, which then cools the power device. When the junction temperature of the power device is lower than the preset temperature, the first relay connects to interface 1, and the semiconductor refrigeration chip 10 uses the temperature difference between the first end plate 11 and the second end plate 12 to charge the charging power supply 31, thereby fully utilizing energy. When the temperature control device stops working, the control interface DO1 controls the opening of both the second relay 22 and the third relay 32, and both the cooling circuit 20 and the charging circuit 30 stop working.

[0047] like Figure 2 and Figure 3As shown, the temperature control device further includes a heat sink 70 connected to the second end plate 12. When the cooling circuit 20 is turned on, the second end plate 12 becomes the hot end plate. The heat sink 70 connected to the second end plate 12 dissipates heat from the second end plate 12. Typically, the temperature difference between the cold and hot end plates of the semiconductor refrigeration plate 10 can reach between 40°C and 65°C. If the temperature of the hot end plate is lowered through active heat dissipation, the temperature of the cold end plate will also drop accordingly, achieving a lower temperature and further improving heat dissipation efficiency.

[0048] Of course, when the heat dissipation power of the semiconductor refrigeration plate 10 is sufficient, a radiator may not be added to the second end plate 12, thereby further reducing the volume, making the use of the temperature control device more flexible, and improving space utilization.

[0049] like Figures 2 to 5 As shown, the present application also provides a power module assembly, including a power device and a temperature control device, wherein the temperature control device is the temperature control device described above. The temperature control device described above can effectively solve the problem in the related art that existing cooling methods are difficult to meet the heat dissipation requirements of the power device, and the power module assembly with the temperature control device described above also has the above advantages.

[0050] Figure 2 and Figure 3 The schematic diagram of the structure of the first embodiment of the power module assembly according to the present application is shown, wherein the power device includes a substrate 81, a power chip 82, a cover 83 and a lead terminal 84, the power chip 82 and the lead terminal 84 are arranged on the substrate 81, the substrate 81 is arranged on the first end plate 11, the cover 83 is arranged on the first end plate 11 and covers the periphery of the substrate 81 and the power chip 82, and the lead terminal 84 extends outward from the cover 83. In general power devices, a metal base plate is arranged below the substrate to provide mechanical support for the substrate and transfer the heat of the power device to the heat sink. The cover is arranged above the metal base plate and together with the metal base plate forms an installation space for installing the power chip, the substrate and part of the lead terminal. After the power device is packaged, the semiconductor cooling plate or other heat sink is connected to the lower end of the base metal base plate. This will make the thermal resistance between the power chip and the semiconductor cooling plate or other heat sink larger, affecting the heat dissipation efficiency.

[0051] In this embodiment, the metal base plate originally supporting the substrate 81 and the connection layers used to connect the metal base plate to the substrate and to the heat sink are removed. This allows the semiconductor cooling plate 10 to directly serve as the substrate support structure, reducing the thermal resistance between the power chip 82 and the semiconductor cooling plate 10, thereby improving heat dissipation efficiency. Specifically, the substrate 81 is directly connected to the semiconductor cooling plate 10 via a thermal coupling agent or other method. The semiconductor cooling plate 10 is also connected to the heat sink 70 via a thermal coupling agent or other method.

[0052] The housing 83 is made of an insulating material and includes a surrounding panel 831 and a top panel 832 disposed above the surrounding panel 831. The housing 83 is connected to the first end plate 11 of the semiconductor cooling plate 10 by bonding or other means. In this embodiment, the surrounding panel 831 and the top panel 832 are separate structures; however, in embodiments not shown in the figures, the surrounding panel and the top panel may also be an integral structure.

[0053] like Figure 3 As shown, in this embodiment, the substrate 81 has a three-layer structure, including an insulating plate body 811, a conductive layer 812 disposed above the plate body 811, and a metal layer disposed below the plate body 811. The power chip 82 and the lead terminal 84 are connected to the conductive layer 812, achieving the functions of upper-layer conductivity, middle-layer insulation, and lower-layer heat dissipation. The conductive layer 812 and the metal layer can be made of copper, aluminum, or other conductive materials. The plate body 811 can be made of various ceramic materials such as aluminum nitride (AlN), silicon nitride (Si3N4), and aluminum oxide (Al2O3). Preferably, the plate body 811 is made of aluminum nitride (AlN). Compared with silicon nitride (Si3N4) and aluminum oxide (Al2O3), aluminum nitride (AlN) has higher thermal conductivity and can therefore withstand higher voltages and achieve higher power density.

[0054] The conductive layer 812 includes multiple conductive areas arranged at intervals. The power chip 82 is connected to one of the conductive areas through welding or sintering processes, and the lead terminal 84 is connected to other conductive areas through welding or power bonding processes. The power chip 82 and other conductive areas are electrically connected through bonding wires 87 and other processes, thereby realizing electrical connection between the power chip 82 and the lead terminal 84.

[0055] In this embodiment, four lead terminals 84 are provided, including a gate terminal, a source terminal, a drain terminal, and an auxiliary source terminal. The gate terminal, source terminal, and auxiliary source terminal are each connected to a conductive region, while the drain terminal and the power device are connected to the same conductive region. The four lead terminals 84 extend upward from the housing 83, and the extended portions of the lead terminals 84 can be bent, for example.

[0056] like Figure 3 As shown, the power module assembly further includes a packaging resin 86 . The packaging resin 86 is located in the cover 83 , and the upper surface of the packaging resin 86 is higher than the upper surface of the bonding wire 87 .

[0057] Figure 4 and Figure 5 A schematic structural diagram of a second embodiment of a power module assembly according to the present application is shown, wherein the power device includes a power chip 82, a housing 83, and lead terminals 84. The power chip 82 and lead terminals 84 are disposed on a first end plate 11. The housing 83 is disposed on the first end plate 11 and covers the periphery of the power chip 82. The lead terminals 84 extend outward from the housing 83. Based on the first embodiment, this embodiment further removes the substrate used to mount the power chip 82 and lead terminals 84, allowing the power chip 82 and lead terminals 84 to be directly disposed on the first end plate 11 of the semiconductor refrigeration plate 10. The semiconductor refrigeration plate 10 provides mechanical support and heat dissipation, further reducing the thermal resistance between the power chip 82 and the semiconductor refrigeration plate 10 and improving heat dissipation efficiency.

[0058] like Figure 4 and Figure 5 As shown, a conductive metal layer 85 is provided on the first end plate 11, and the power chip 82 and the lead terminal 84 are connected to the conductive metal layer 85. The conductive metal layer 85 is covered on the first end plate 11 by sintering or other techniques.

[0059] In the description of the present invention, it needs to be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "horizontal, vertical, vertical, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention; the directional words "inside and outside" refer to the inside and outside relative to the outline of each component itself.

[0060] For ease of description, spatially relative terms such as "above," "on the upper surface of," "on top of," etc. may be used herein to describe the spatial positional relationship of a device or feature to other devices or features as shown in the figures. It should be understood that spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is inverted, a device described as "above" or "on top of" other devices or structures would then be positioned as "below" or "below" the other devices or structures. Thus, the exemplary term "above" can include both the orientations of "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used herein should be interpreted accordingly.

[0061] In addition, it should be noted that the use of words such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. Unless otherwise stated, the above words have no special meaning and therefore cannot be understood as limiting the scope of protection of this utility model.

[0062] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that the present invention is susceptible to various modifications and variations. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

Claims

1. A temperature control device for a power device, characterized in that: include: A semiconductor refrigeration plate (10) having a first end plate (11) and a second end plate (12) arranged opposite to each other, wherein the power device is arranged on the first end plate (11); A refrigeration circuit (20) is connected to both ends of the semiconductor refrigeration plate (10) and has a power supply (21), wherein the power supply (21) is capable of supplying power to the semiconductor refrigeration plate (10) so that the semiconductor refrigeration plate (10) dissipates heat for the power device; A charging circuit (30) is connected to both ends of the semiconductor refrigeration plate (10) and has a charging power supply (31), and the semiconductor refrigeration plate (10) is capable of charging the charging power supply (31); a switching element (40) electrically connected to both the refrigeration circuit (20) and the charging circuit (30) and capable of controlling one of the refrigeration circuit (20) and the charging circuit (30) to be conductive or controlling both the refrigeration circuit (20) and the charging circuit (30) to be non-conductive; The controller (50) is electrically connected to the refrigeration circuit (20), the charging circuit (30), and the switching element (40), and controls the working state of the switching element (40).

2. The temperature control device for a power device according to claim 1, wherein: The temperature control device of the power device further comprises a temperature measuring element (60), wherein the temperature measuring element (60) is arranged on the power device and is connected to the controller (50) via a signal, and the controller (50) controls the working state of the switching element (40) according to the temperature measurement signal of the temperature measuring element (60).

3. The temperature control device for a power device according to claim 2, wherein: The controller (50) includes a comparator capable of comparing the temperature of the power device with a preset temperature. The controller (50) controls the switching element (40) to turn on the cooling circuit (20) or the charging circuit (30) according to the comparison result of the comparator.

4. The temperature control device for a power device according to any one of claims 1 to 3, characterized in that: The switching element (40) includes a first relay, the first relay having a first disconnected state, a first conductive state, and a second conductive state. When the first relay is in the first conductive state, the refrigeration circuit (20) is conductive, and when the first relay is in the second conductive state, the charging circuit (30) is conductive.

5. The temperature control device for a power device according to any one of claims 1 to 3, characterized in that: The refrigeration circuit (20) is provided with a second relay (22), the second relay (22) having a second disconnected state and a third conductive state, and when the temperature control device of the power device is powered on, the second relay (22) switches from the second disconnected state to the third conductive state; and / or, The charging circuit (30) is provided with a third relay (32), the third relay (32) having a third disconnection state and a fourth conduction state, and when the temperature control device of the power device is powered on, the third relay (32) switches from the third disconnection state to the fourth conduction state.

6. The temperature control device for a power device according to any one of claims 1 to 3, characterized in that: The temperature control device for the power device further comprises a heat sink (70) connected to the second end plate (12).

7. A power module assembly, comprising a power device and a temperature control device for the power device, characterized in that: The temperature control device for a power device is the temperature control device for a power device according to any one of claims 1 to 6.

8. The power module assembly according to claim 7, characterized in that: The power device comprises a substrate (81), a power chip (82), a cover (83) and a lead terminal (84); the power chip (82) and the lead terminal (84) are arranged on the substrate (81); the substrate (81) is arranged on the first end plate (11); the cover (83) is arranged on the first end plate (11) and covers the periphery of the substrate (81) and the power chip (82); and the lead terminal (84) extends outward from the cover (83).

9. The power module assembly according to claim 7, characterized in that: The power device comprises a power chip (82), a cover (83) and a lead terminal (84); the power chip (82) and the lead terminal (84) are arranged on the first end plate (11); the cover (83) is arranged on the first end plate (11) and covers the outer periphery of the power chip (82); and the lead terminal (84) extends outward from the cover (83).

10. The power module assembly according to claim 9, characterized in that: A conductive metal layer (85) is provided on the first end plate (11), and the power chip (82) and the lead terminal (84) are connected to the conductive metal layer (85).

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