Super junction MOSFET device and detection system
By setting a temperature detection structure above the source region of the superjunction MOSFET device, real-time temperature monitoring is achieved, which solves the applicability problem of the device in temperature-sensitive scenarios, improves the production feasibility and consistency of the device, and prevents overheating damage.
Patent Information
- Application Number
- CN202422762873.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-13
- Publication Date
- 2025-09-26
- Estimated Expiration
- 2034-11-13
AI Technical Summary
Existing superjunction MOSFET devices are not suitable for temperature-sensitive scenarios and cannot be well applied in temperature-sensitive application scenarios.
A temperature detection structure is set above the source region of the super junction MOSFET device and connected to the temperature monitoring device. The temperature is detected through the target diode to achieve real-time temperature monitoring.
The applicability of superjunction MOSFET devices in temperature-sensitive scenarios is improved, the impact of the step difference of the thick oxide layer under the gate layer is avoided, the production feasibility and consistency of the device are enhanced, and the temperature monitoring device is used to prevent equipment damage caused by overheating.
Smart Images
Figure CN223391594U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of semiconductor power devices, and in particular to a super junction MOSFET device and a detection system. Background Art
[0002] Superjunction MOSFETs, also known as superjunction metal oxide semiconductor field effect transistors (SJ-MOSFETs), are a rapidly developing and widely used new power semiconductor device. They are widely used in power supplies and adapters for consumer electronics such as personal computers, laptops, netbooks, mobile phones, high-pressure gas discharge lamps, LCD and plasma TVs, and game consoles. However, current SJ MOSFETs are not well suited for temperature-sensitive applications. Utility Model Content
[0003] The present application provides a super junction MOSFET device and a detection system, which can improve the applicability of SJ MOSFET in temperature-sensitive scenarios.
[0004] To achieve the above objectives, this application adopts the following technical solutions:
[0005] In a first aspect of an embodiment of the present application, a super junction MOSFET device is provided, the device comprising:
[0006] A drain electrode of a first conductive type, a pillar structure located on the drain electrode, and a source electrode structure formed in the pillar structure;
[0007] The source structure includes a source region and a source lead, the source region includes an oxide layer, and the oxide layer is provided with a gate structure and a temperature detection structure;
[0008] The gate structure includes a gate lead and a gate layer, and the temperature detection structure is connected to a temperature monitoring device.
[0009] As a possible implementation manner, the oxide layer includes a first polysilicon layer, and the temperature detection structure is formed in the first polysilicon layer.
[0010] As a possible implementation, the temperature detection structure is a target diode for detecting temperature, and the target diode is formed by a plurality of PN junctions connected in series.
[0011] As a possible implementation manner, the gate layer is a second polysilicon layer, and the first polysilicon layer and the second polysilicon layer are spaced apart and arranged on the oxide layer.
[0012] As a possible implementation, the device further includes: a substrate having a first conductivity type, the substrate having a first surface and a second surface opposite to each other;
[0013] The drain is disposed on the second surface of the substrate.
[0014] As a possible implementation manner, the column structure is provided on the first surface of the substrate, and the column structure includes first columns having a first conductivity type and second columns having a second conductivity type, and the first columns and the second columns are arranged alternately.
[0015] As a possible implementation manner, the second pillar includes a heavily doped region of the first conductivity type, and the source region is formed in the heavily doped region.
[0016] As a possible implementation manner, the first conductivity type is N-type, and the second conductivity type is P-type, or the first conductivity type is P-type, and the second conductivity type is N-type.
[0017] According to a second aspect of the embodiment of the present application, a detection system is provided, the system comprising: a temperature monitoring device and the super junction MOSFET device according to the first aspect of the embodiment of the present application;
[0018] The temperature monitoring device is used to collect the voltage of the target diode in the super junction MOSFET device and determine the current temperature of the super junction MOSFET device based on the voltage.
[0019] As a possible implementation manner, the temperature monitoring device is further configured to generate a prompt signal if it is detected that the current temperature exceeds a preset temperature range.
[0020] The beneficial effects of the technical solutions provided in the embodiments of the present application include at least:
[0021] The embodiment of the present application provides a super junction MOSFET device, which includes: a first conductive type drain, a pillar structure located on the drain, and a source structure formed in the pillar structure; the source structure includes a source region and a source lead, the source region includes an oxide layer, and a gate structure and a temperature detection structure are provided on the oxide layer; the gate structure includes a gate lead and a gate layer, and the temperature detection structure is connected to a temperature monitoring device. The super junction MOSFET device provided in the embodiment of the present application, by providing a temperature detection structure on the oxide layer above the source region and connecting the temperature detection structure to the temperature monitoring device, can monitor the temperature of the super junction MOSFET device in real time through the temperature monitoring device, so that the super junction MOSFET device can be better used in temperature-sensitive applications such as solid-state relays and solid-state circuit breakers, and can improve the applicability of SJ MOSFET in temperature-sensitive scenarios. Furthermore, by providing a temperature detection structure above the source region, the influence of the step difference of the thick oxide layer below the gate layer can be avoided, and at the same time, the withstand voltage of the temperature detection structure can be easier to adjust, making the device easier to produce and having better device consistency. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] Figure 1 A structural diagram of a super junction MOSFET device provided in an embodiment of the present application;
[0023] Figure 2 A structural diagram of a detection system provided in an embodiment of the present application.
[0024] Reference numerals:
[0025] 100-super junction MOSFET device, 200-temperature monitoring device, 1-substrate, 2-second column, 3-first column, 4-source region, 5-drain, 6-oxide layer, 7-gate layer, 8-source lead, 9-contact hole, 10-target diode, 11-anode lead, 12-cathode lead. DETAILED DESCRIPTION
[0026] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.
[0027] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.
[0028] It will be understood that when an element or layer is referred to as being “on,” “adjacent,” “connected to,” or “coupled to” another element or layer, it can be directly on, adjacent, connected or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on,” “directly adjacent,” “directly connected to,” or “directly coupled to” another element or layer, there are no intervening elements or layers present.
[0029] It should be noted that the illustrations provided in this embodiment only illustrate the basic concept of the present application in a schematic manner. Therefore, the illustrations only show components related to the present application and are not drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed at will, and the component layout type may also be more complicated.
[0030] The present application provides a super junction MOSFET device, such as Figure 1 As shown, the device includes:
[0031] A first conductive type drain 5, a pillar structure located on the drain 5, and a source structure formed in the pillar structure;
[0032] The source structure includes a source region 4 and a source lead 8. The source region 4 includes an oxide layer 6. The oxide layer 6 is provided with a gate structure and a temperature detection structure.
[0033] The gate structure includes a gate lead and a gate layer 7 , and the temperature detection structure is connected to a temperature monitoring device.
[0034] It should be noted that Figure 1 It is a longitudinal cross-sectional view of the super junction MOSFET device at the temperature detection structure position, where Figure 1 The gate layer 7 in the embodiment is connected to the corresponding gate lead except for the source lead 8 and the temperature detection structure. Figure 1 Not fully shown.
[0035] The embodiment of the present application provides a super junction MOSFET device, which includes: a first conductive type drain 5, a pillar structure located on the drain 5, and a source structure formed in the pillar structure; the source structure includes a source region 4 and a source lead 8, the source region 4 includes an oxide layer 6, and the oxide layer 6 is provided with a gate structure and a temperature detection structure; the gate structure includes a gate lead and a gate layer 7, and the temperature detection structure is connected to a temperature monitoring device. The super junction MOSFET device provided in the embodiment of the present application, by providing a temperature detection structure on the oxide layer 6 above the source region 4 and connecting the temperature detection structure to the temperature monitoring device, can monitor the temperature of the super junction MOSFET device in real time through the temperature monitoring device, so that the super junction MOSFET device can be better used in temperature-sensitive applications such as solid-state relays and solid-state circuit breakers, and can improve the applicability of SJ MOSFET in temperature-sensitive scenarios. Furthermore, by providing a temperature detection structure above the source region 4, the influence of the step difference of the thick oxide layer 6 below the gate layer 7 can be avoided, and the withstand voltage of the temperature detection structure can be made easier to adjust, making the device easier to produce and having better device consistency.
[0036] Optionally, the oxide layer 6 includes a first polysilicon layer, and the temperature detection structure is formed in the first polysilicon layer.
[0037] In the actual preparation process, when etching the gate layer 7 , a piece of polysilicon, ie, a first polysilicon layer, may be reserved above the source region 4 , and a temperature detection structure is prepared in the first polysilicon layer.
[0038] Optionally, the temperature detection structure is a target diode 10 for detecting temperature, and the target diode 10 is formed by multiple PN junctions connected in series. Specifically, N-type and P-type implants can be performed in the first polysilicon layer, and two mask layers can be added during the implantation process. An anode lead 11 is led from the P terminal, and a cathode lead 12 is led from the N terminal to form a diode structure, i.e., the target diode 10. The anode lead 11 and cathode lead 12 of the target diode 10 are both connected to a monitoring device.
[0039] It is understood that due to the negative temperature coefficient of the diode, the forward voltage drop of the diode decreases as the temperature rises, typically decreasing by approximately 2 mV for every 1°C increase. This characteristic allows the diode to be used for temperature measurement. Therefore, the monitoring device can determine the current temperature of the super-junction MOSFET device by sampling the pressure of the target diode 10.
[0040] Optionally, the gate layer 7 is a second polysilicon layer, and the first polysilicon layer and the second polysilicon layer are spaced apart and arranged on the oxide layer 6 .
[0041] It should be noted that the first polysilicon layer and the second polysilicon layer may be located in the same plane and have the same height. The first polysilicon layer is used for the target diode 10 , and the second polysilicon layer is used for forming a gate.
[0042] Optionally, the device further includes: a substrate 1 having a first conductivity type, the substrate 1 having a first surface and a second surface opposite to each other; the drain 5 is disposed on the second surface of the substrate 1. The pillar structure is disposed on the first surface of the substrate 1, the pillar structure including first pillars 3 having the first conductivity type and second pillars 2 having the second conductivity type, the first pillars 3 and the second pillars 2 being arranged alternately.
[0043] Substrate 1 has a first conductivity type and has opposing first and second surfaces. Substrate 1 serves as a carrier for the superjunction MOSFET, primarily providing support. Substrate 1 can be made of silicon, germanium, or silicon-germanium. In this embodiment, substrate 1 is preferably made of silicon, which is the most common, inexpensive, and stable semiconductor material.
[0044] The material of the first column 33 can be silicon, and the material of the second column 22 can be SiC. The height of the first column 33 and the second column 22 is the same. Optionally, the doping concentration of the first column 33 and the second column 22 can be 1×10 14 ~8× 10 15 cm -3 In addition, the minority carrier lifetime of the pillar of the superjunction MOSFET may be 0.1 μs to 100 μs, for example, 0.1 μs, 0.5 μs, 1 μs, 5 μs, 10 μs, 20 μs, 30 μs, 40 μs, 50 μs, 60 μs, 70 μs, 80 μs, 90 μs, or 100 μs.
[0045] Minority carriers are the opposite of majority carriers. Semiconductors contain two types of carriers: electrons and holes. When a particular carrier is in the minority and plays a minor role in electrical conduction, it is called a minority carrier. For example, in an N-type semiconductor, holes are the minority carriers, while electrons are the majority carriers. In a P-type semiconductor, holes are the majority carriers, while electrons are the minority carriers.
[0046] The electrodes of the super junction MOSFET device include: a drain 5 , which is arranged on the second surface of the substrate 1 ; and a gate, which is arranged on the first pillar 3 and the second pillar 2 .
[0047] Optionally, the second pillar 2 includes a heavily doped region of the first conductivity type, and the source region 4 is formed in the heavily doped region. The source lead 8 or source metal is located on the pillar structure, and the source region 4 is connected to the source lead 8 through a contact hole 9. The gate lead is connected to the gate lead through the contact hole 9.
[0048] Optionally, the first conductivity type is N-type and the second conductivity type is P-type, or the first conductivity type is P-type and the second conductivity type is N-type.
[0049] The present application also provides a detection system, which includes: a temperature monitoring device 200 and a super junction MOSFET device 100 .
[0050] The temperature monitoring device 200 is configured to collect the voltage of the target diode 10 in the super-junction MOSFET device 100 and determine the current temperature of the super-junction MOSFET device 100 based on the voltage. The temperature monitoring device 200 is further configured to generate a warning signal if it detects that the current temperature exceeds a preset temperature range.
[0051] It will be appreciated that the temperature monitoring device 200 can monitor the operating temperature of the super-junction MOSFET device 100 in real time, ensuring that it operates within its normal operating range. By converting temperature changes into electrical signals, temperature anomalies can be detected promptly, preventing device damage or performance degradation due to overheating. Furthermore, the temperature monitoring device 200 can use software to display temperature data on-site, store historical records, output data analysis charts, or perform corresponding calculations and controls. For example, it can control heating or cooling equipment to maintain the super-junction MOSFET device 100 within its optimal operating temperature range, thereby improving device stability and lifespan. Furthermore, in some high-power or critical applications, the temperature monitoring device 200 can also serve as part of a safety protection mechanism. When it determines that the temperature of the super-junction MOSFET device 100 exceeds a set threshold, the temperature monitoring device 200 can automatically take measures, such as reducing device power or shutting down the device, to prevent device damage or safety incidents such as fire.
[0052] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or make equivalent replacements for some or all of the technical features therein. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.
[0053] Furthermore, those skilled in the art will appreciate that although some embodiments herein include certain features included in other embodiments but not others, combinations of features from different embodiments are intended to be within the scope of this application and to form distinct embodiments. For example, in the claims above, any of the claimed embodiments may be used in any combination. The information disclosed in this background section is intended solely to enhance understanding of the overall background of this application and should not be construed as an admission or any implication that such information constitutes prior art known to those skilled in the art.
Claims
1. A super junction MOSFET device, characterized in that: The device comprises: A drain electrode of a first conductive type, a pillar structure located on the drain electrode, and a source electrode structure formed in the pillar structure; The source structure includes a source region and a source lead, the source region includes an oxide layer, and the oxide layer is provided with a gate structure and a temperature detection structure; The gate structure includes a gate lead and a gate layer, and the temperature detection structure is connected to a temperature monitoring device.
2. The device according to claim 1, characterized in that The oxide layer includes a first polysilicon layer, and the temperature detection structure is formed in the first polysilicon layer.
3. The device according to claim 2, characterized in that The temperature detection structure is a target diode for detecting temperature, and the target diode is formed by a plurality of PN junctions connected in series.
4. The device according to claim 2, characterized in that The gate layer is a second polysilicon layer, and the first polysilicon layer and the second polysilicon layer are spaced apart and arranged on the oxide layer.
5. The device according to claim 1, wherein The device further includes: a substrate having a first conductivity type, the substrate having a first surface and a second surface opposite to each other; The drain is disposed on the second surface of the substrate.
6. The device according to claim 5, characterized in that The column structure is disposed on the first surface of the substrate. The column structure includes first columns having a first conductivity type and second columns having a second conductivity type. The first columns and the second columns are alternately arranged.
7. The device according to claim 6, characterized in that The second pillar includes a heavily doped region of the first conductivity type, and the source region is formed in the heavily doped region.
8. The device according to claim 6, characterized in that The first conductivity type is N-type and the second conductivity type is P-type, or the first conductivity type is P-type and the second conductivity type is N-type.
9. A detection system, characterized in that: The system comprises: a temperature monitoring device and a super junction MOSFET device according to any one of claims 1 to 8; The temperature monitoring device is used to collect the voltage of the target diode in the super junction MOSFET device and determine the current temperature of the super junction MOSFET device based on the voltage.
10. The system according to claim 9, characterized in that The temperature monitoring device is further configured to generate a prompt signal if it is detected that the current temperature exceeds a preset temperature range.