Electron beam detection device and electron beam detection system
The electron beam current detection device using the anode target and electrode structure solves the problems of high testing cost and insufficient accuracy in traditional methods, and realizes efficient and stable electron beam current detection, which is suitable for a variety of environments and electron gun types.
Patent Information
- Application Number
- CN202422539207.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-21
- Publication Date
- 2025-09-30
- Estimated Expiration
- 2034-10-21
AI Technical Summary
Traditional electron beam current rate testing methods rely on external equipment, resulting in high testing costs and inaccurate results. They are also susceptible to environmental factors, especially in high-energy electron beam applications where equipment is easily damaged, affecting accuracy and stability during long-term use.
An anode target and electrode structure is adopted. The anode target receives the electron beam and the electrode collects the electrical signal. The flow rate is calculated in combination with the measuring equipment and the controller. The electrode materials with high electron capture efficiency such as gold, silver, copper, etc. are used to simplify the connection and reduce the equipment cost, and adapt to different environmental conditions.
It improves the accuracy and stability of the test, reduces equipment costs, and extends service life. It is suitable for rapid and routine detection in industrial production and has wide adaptability, suitable for different electron gun types and application requirements.
Smart Images
Figure CN223400968U_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of vacuum equipment, and in particular to an electron beam detection device and an electron beam detection system. Background Art
[0002] An electron beam is a stream of electrons moving in a directed manner with a small divergence, typically generated by an electron gun. In many applications of electron beam technology, such as materials processing, electron microscopy, and semiconductor device manufacturing, the electron gun's flux rate is a critical parameter, directly affecting the intensity and energy distribution of the electron beam, and thus the performance and accuracy of the final application. Traditional testing methods often rely on external measurement equipment, which not only increases testing costs but also can affect the accuracy of test results due to problems such as poor connections between devices. Utility Model Content
[0003] The present disclosure provides an electron beam current detection device, comprising:
[0004] an anode target, the anode target being used to receive the electron beam; and
[0005] The electrode is electrically connected to the anode target and is used to collect the electrical signal of the anode target.
[0006] In some embodiments of the present disclosure, the electron beam current detection apparatus further includes a measuring device electrically connected to the electrode and configured to measure the electrical signal of the anode target collected by the electrode.
[0007] In some embodiments of the present disclosure, the anode target comprises:
[0008] substrate;
[0009] a diamond layer disposed on a substrate; and
[0010] The target material layer is arranged on the diamond layer and is used to receive the electron beam.
[0011] In some embodiments of the present disclosure, the anode target further includes a buffer layer, which is disposed between the diamond layer and the target material layer.
[0012] In some embodiments of the present disclosure, the target layer includes a notch disposed at an edge, and the electrode is disposed at the notch and is in electrical contact with the target layer.
[0013] In some embodiments of the present disclosure, the electron beam current detection apparatus further includes a cable, and the cable is used to connect the electrode and the measuring device.
[0014] In some embodiments of the present disclosure, the electron beam current detection apparatus further includes a controller, which is communicatively connected to the measuring device. The controller is configured to receive the target current from the measuring device and calculate the electron beam current rate based on the ratio of the target current to the emission current.
[0015] In some embodiments of the present disclosure, the controller is further configured to measure or receive an emission current of the electron beam source.
[0016] The present disclosure provides an electron beam detection system, comprising:
[0017] an electron beam source for emitting an electron beam; and
[0018] The electron beam flow detection device according to any one of the embodiments of the present disclosure is used to detect an electron beam.
[0019] In some embodiments of the present disclosure, the electron beam flow detection system further includes a vacuum chamber, in which the anode target of the electron beam flow detection device is disposed; and the electron beam source is at least partially disposed in the vacuum chamber for emitting an electron beam to the anode target.
[0020] According to some embodiments of the present disclosure, the electron beam current detection device and the electron beam current detection system can bring beneficial technical effects. For example, the electron beam current detection device and the electron beam current detection system of some embodiments of the present disclosure are electrically connected to the anode target through an electrode, and utilize the high electron capture efficiency of the electrode to effectively reduce the scattering and rebound of the electron beam during the test process, thereby improving the accuracy of the test. For another example, the electron beam current detection device and the electron beam current detection system of some embodiments of the present disclosure, due to the good stability of the anode target material, can withstand long-term electron beam irradiation without being easily damaged, thereby ensuring the stability of the test results. In addition, due to the durability of the anode target and the electrode, compared with traditional electron beam current detection devices, they have a longer service life and lower maintenance costs, and are particularly suitable for industrial application scenarios that require long-term continuous testing. For another example, the electron beam current detection device and the electron beam current detection system of some embodiments of the present disclosure are connected to external measuring equipment through simple electrodes and cables, which simplifies the complexity of the test device, reduces the equipment cost, and is more suitable for rapid and routine detection in industrial production. For another example, the electron beam current detection device and electron beam current detection system of some embodiments of the present disclosure have wide applicability, are not dependent on a specific test environment (such as specific temperature or magnetic field conditions), and the electrode material and anode target material can be selected according to different electron gun types and application requirements, thereby meeting the needs of different fields for electron beam current rate testing. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only one embodiment of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0022] Figure 1 A schematic structural diagram of an electron beam current detection device according to some embodiments of the present disclosure is shown.
[0023] Figure 2 A schematic structural diagram of an electron beam detection system according to some embodiments of the present disclosure is shown.
[0024] In the above drawings, the reference numerals represent:
[0025] 1000-Electron Beam Detection System
[0026] 100-Electron beam current detection device
[0027] 110-Anode target
[0028] 111-Base
[0029] 112-Diamond layer
[0030] 113-target layer
[0031] 114-Buffer layer
[0032] 120-electrode
[0033] 130-Measuring Equipment
[0034] 140-cable
[0035] 150-Controller
[0036] 200-electron beam source
[0037] 300-vacuum chamber DETAILED DESCRIPTION
[0038] Some embodiments of the present disclosure will be described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only exemplary embodiments of the present disclosure, rather than all embodiments.
[0039] In the description of the present disclosure, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", "top", "bottom", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present disclosure. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. In the description of the present disclosure, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "coupled" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two elements. In the description of the present disclosure, the distal end or distal side refers to the end or side that extends into a vacuum environment (e.g., a vacuum chamber), and the proximal end or proximal side refers to the end or side opposite to the distal end or distal side (e.g., the end or side away from the vacuum chamber, or the end or side within the vacuum chamber close to the vacuum chamber wall, etc.). Alternatively, the end or side close to the driving device is the proximal end or proximal side, and the end or side away from the driving device is the distal end or distal side. For those of ordinary skill in the art, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.
[0040] Traditional electron beam current rate measurement methods mainly include the use of Faraday cups and secondary electron multipliers (SEMs). Although these methods can achieve current rate measurement to a certain extent, they have some shortcomings:
[0041] Faraday cup: The efficiency of electron beam capture is affected by the beam distribution and energy. In high-energy electron beam applications, the material of the Faraday cup may be damaged or deformed due to the irradiation of the electron beam, affecting the accuracy and stability of long-term use.
[0042] Secondary electron multiplier: The measurement results are easily affected by environmental factors (such as temperature, magnetic field, etc.), and the equipment cost is relatively high, making it unsuitable as a conventional production line detection method.
[0043] The present disclosure relates to an electron beam current detection device that is more accurate, more stable in operation, simpler, and more economical than traditional methods, and is suitable for the high precision and high efficiency requirements of modern electron beam technology.
[0044] Figure 1 A schematic structural diagram of an electron beam current detection device 100 according to some embodiments of the present disclosure is shown.
[0045] like Figure 1As shown, in some embodiments of the present disclosure, the electron beam current detection device 100 may include an anode target 110 and an electrode 120. The anode target 110 is used to receive the electron beam current. The electrode 120 is electrically connected to the anode target 110 and is used to collect the electrical signal of the anode target 110.
[0046] In some embodiments of the present disclosure, the electrode 120 may include a material having high electron capture efficiency and good electrical conductivity, such as gold, silver, copper, platinum, and the like.
[0047] like Figure 1 As shown, in some embodiments of the present disclosure, the electron beam current detection apparatus 100 may further include a measuring device 130. The measuring device 130 is electrically connected to the electrode 120 and is used to measure the electrical signal of the anode target 110 collected by the electrode 120.
[0048] In some embodiments, the measurement device 130 may include an ammeter.
[0049] like Figure 1 As shown, in some embodiments of the present disclosure, the anode target 110 may include a substrate 111, a diamond layer 112, and a target layer 113. The diamond layer 112 is disposed on the substrate 111. The target layer 113 is disposed on the diamond layer 112 and is used to receive the electron beam.
[0050] In some embodiments of the present disclosure, substrate 111 may comprise a copper substrate. Copper substrates are heat-resistant and suitable for detection in high-temperature environments. Diamond layer 112 may be deposited on copper substrate 111 using various suitable coating techniques. Diamond layer 112 has excellent thermal conductivity, facilitating heat dissipation. Furthermore, diamond layer 112 has excellent insulation properties, enabling electrical signals from anode target 110 to be better collected by electrode 120.
[0051] In some embodiments of the present disclosure, the target material layer 113 of the anode target 110 may include any suitable layer suitable for electron beam irradiation, such as a tungsten layer, a molybdenum layer, an aluminum layer, and the like.
[0052] like Figure 1 As shown, in some embodiments of the present disclosure, the anode target 110 may further include a buffer layer 114. The buffer layer 114 may be disposed between the diamond layer 112 and the target layer 113.
[0053] In some embodiments, the buffer layer 114 may include a titanium layer. Providing the buffer layer 114 between the target layer 113 and the diamond layer 112 can improve interface bonding, enhance the stability and durability of the anode target 110, and ensure the performance and life of the anode target 110 in high-power applications.
[0054] like Figure 1As shown, in some embodiments of the present disclosure, the target layer 113 includes a notch disposed at an edge thereof. The electrode 120 is disposed at the notch and is in electrical contact with the target layer 113 .
[0055] In some embodiments of the present disclosure, disposing the electrode 120 at the edge of the target layer 113 does not affect actual electron beam current detection, and enables the electrical signal of the anode target 110 to be collected by the electrode 120 .
[0056] like Figure 1 As shown, in some embodiments of the present disclosure, the electron beam current detection device 100 may further include a cable 140 . The cable 140 is used to connect the electrode 120 and the measuring device 130 .
[0057] In some embodiments of the present disclosure, the cable 140 may include a high-temperature resistant nickel-chromium alloy cable, so that the cable 140 can still stably transmit current to the measuring device 130 under high temperature conditions.
[0058] like Figure 1 As shown, in some embodiments of the present disclosure, the electron beam current detection device 100 may further include a controller 150. The controller 150 is connected in communication with the measuring device 130. The controller 150 is used to receive the target current from the measuring device 130 and calculate the electron beam current rate based on the ratio of the target current to the emission current. In some embodiments of the present disclosure, the controller 150 is connected in communication with the measuring device and is further used to measure or receive the electron beam source (e.g., Figure 2 The emission current of the electron beam source 200 shown in FIG. 2 is obtained, and the electron beam current flux is calculated based on the ratio of the current to the target to the emission current.
[0059] Figure 2 FIG. 1 is a schematic structural diagram of an electron beam flow detection system 1000 according to some embodiments of the present disclosure.
[0060] like Figure 2 As shown, in some embodiments of the present disclosure, an electron beam current detection system 1000 may include an electron beam source 200 and an electron beam current detection device 100 according to any embodiment of the present disclosure. The electron beam source 200 is used to emit an electron beam. The electron beam current detection device 100 is used to detect an electron beam.
[0061] like Figure 2 As shown, in some embodiments of the present disclosure, the electron beam current detection system 1000 may further include a vacuum chamber 300. The anode target 110 of the electron beam current detection device 100 is disposed in the vacuum chamber 300. The electron beam source 200 is at least partially disposed in the vacuum chamber 300 for emitting an electron beam toward the anode target 110.
[0062] The electron beam detection system 1000 of some embodiments of the present disclosure can be used to perform electron beam detection. The electron beam source 200 (eg, an electron gun) emits an electron beam to the anode target 110. The anode target 110 receives the electron beam and generates an electrical signal under the bombardment of the electron beam.
[0063] The electrode 120 is electrically connected to the anode target 110 and can collect the electrical signal of the anode target 110. The measuring device 130 can measure the electrical signal of the anode target 110 collected by the electrode 120. The controller 150 obtains the target current based on the electrical signal of the anode target 110 collected by the electrode 120 measured by the measuring device 130.
[0064] In some embodiments of the present disclosure, the controller 150 may also be in communication with the electron beam source 200. During electron beam current detection using the electron beam current detection system 1000 according to some embodiments of the present disclosure, the controller 150 may also measure or receive the emission current of the electron beam source 200 and obtain the current rate of the electron beam source 200 based on the ratio of the target current to the emission current.
[0065] It should be pointed out that the above are only exemplary embodiments of the present disclosure and are not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure should be included in the scope of protection of the present disclosure.
Claims
1. An electron beam current detection device, characterized in that: include: an anode target, the anode target being used to receive the electron beam; as well as An electrode is electrically connected to the anode target and is used to collect the electrical signal of the anode target.
2. The electron beam current detection device according to claim 1, characterized in that: Also includes: A measuring device is electrically connected to the electrode and is used to measure the electrical signal of the anode target collected by the electrode.
3. The electron beam current detection device according to claim 1, wherein: The anode target comprises: substrate; a diamond layer disposed on the substrate; and A target material layer is provided on the diamond layer, and the target material layer is used to receive the electron beam.
4. The electron beam current detection device according to claim 3, characterized in that: The anode target further includes a buffer layer, which is disposed between the diamond layer and the target material layer.
5. The electron beam current detection device according to claim 3, characterized in that: The target layer includes a notch disposed at an edge thereof, and the electrode is disposed at the notch and is in electrical contact with the target layer.
6. The electron beam current detection device according to claim 2, characterized in that: Also included is a cable for connecting the electrodes and the measuring device.
7. The electron beam current detection device according to claim 2, characterized in that: Also includes: A controller is communicatively connected to the measuring device, and is configured to receive the target current from the measuring device and calculate the electron beam current rate based on the ratio of the target current to the emission current.
8. The electron beam current detection device according to claim 7, characterized in that: The controller is further configured to measure or receive the emission current of the electron beam source.
9. An electron beam detection system, characterized in that: include: an electron beam source, for emitting an electron beam; as well as The electron beam current detection device according to any one of claims 1 to 8, is used to detect the electron beam.
10. The electron beam current detection system according to claim 9, characterized in that: Also includes a vacuum chamber, The anode target of the electron beam current detection device is arranged in the vacuum chamber; The electron beam source is at least partially disposed in the vacuum chamber and is configured to emit an electron beam toward the anode target.