Silicon-based liquid crystal structure
By setting a main reflection part and an anti-crosstalk reflection part in a silicon-based liquid crystal display device, combined with the film thickness and angle design, the problems of optical crosstalk and reflectivity improvement are solved, and efficient optical performance improvement is achieved.
Patent Information
- Application Number
- CN202423046264.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-10
- Publication Date
- 2025-09-30
- Estimated Expiration
- 2034-12-10
AI Technical Summary
In existing silicon-based liquid crystal display devices, as the spacing between pixels becomes smaller, optical crosstalk problems and the R/G/B reflectivity cannot be improved simultaneously.
A main reflector and an anti-crosstalk reflector are set on the silicon substrate. The main reflector and the anti-crosstalk reflector form a reflective surface, and by adjusting the film thickness and the angle design, the convergence of reflected light and the improvement of reflectivity are achieved.
It effectively avoids the optical crosstalk problem, reduces the pixel area limitation, and simultaneously improves the R/G/B reflectivity.
Smart Images
Figure CN223401123U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of displays, in particular to a silicon-based liquid crystal structure. Background Art
[0002] Liquid Crystal on Silicon (LCOS) is a new reflective microdisplay technology. The LCOS structure utilizes semiconductor manufacturing processes to fabricate a driver panel (also known as CMOS-LCD) on a silicon wafer. The transistors are then ground and plated with aluminum to act as reflectors, forming a CMOS substrate. The CMOS substrate is then bonded to a glass substrate containing transparent electrodes, injected with liquid crystal, and packaged and tested. The display principle modulates light by controlling the rotation of liquid crystal molecules in the liquid crystal layer to alter the polarization state of light. When the applied voltage to a pixel in the liquid crystal layer is zero, incident polarized light passes through the liquid crystal layer without twisting its polarization direction. Reflected by the underlying metal reflective layer, it remains in its original polarization and is reflected back to its original path by a polarization beam splitter, resulting in the pixel appearing "dark." When voltage is applied to the pixel, the incident light changes its polarization direction after passing through the liquid crystal layer. Upon reflection, it becomes a different polarization upon re-passing the liquid crystal layer, passing through the polarization beam splitter and entering the projection path, resulting in a "bright" image on the screen.
[0003] Silicon-based liquid crystal combines semiconductor and liquid crystal technology, and has many advantages such as high density, high resolution, high resolution, high aperture ratio, power saving and low cost. It has become the new mainstream of large-screen high-resolution and low-cost projection display technology.
[0004] LCOS imaging relies on reflection from an external light source. A reflectivity of less than 80% for R / G / B pixels fails to meet system requirements. While single-color imaging often meets the requirements, simultaneous presentation of the three primary colors falls short. Therefore, simultaneously improving the reflectivity of R / G / B pixels is the most pressing technological requirement for LCOS devices. Furthermore, as the spacing between pixels decreases, light between pixels enters the reflective electrode and exits through another pixel, resulting in optical crosstalk and limiting further reductions in pixel area. Utility Model Content
[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a silicon-based liquid crystal structure to solve the optical crosstalk problem in the prior art caused by the decrease in the spacing between pixels, the light between pixels entering the reflective electrode and then exiting from another pixel, and the problem that the R / G / B reflectivity in LCOS cannot be improved simultaneously.
[0006] To achieve the above-mentioned purpose, the present invention provides a silicon-based liquid crystal structure, comprising:
[0007] A silicon substrate, wherein a reflective electrode is provided on a surface of the silicon substrate, the reflective electrode comprising a main reflective portion and an anti-crosstalk reflective portion; the anti-crosstalk reflective portions are provided at both ends of the main reflective portion; the main reflective portion is provided with a main reflective surface, and the anti-crosstalk reflective portion is provided with an anti-crosstalk reflective surface; the main reflective surface and the anti-crosstalk reflective surface constitute a reflective surface for reflecting incident light;
[0008] a liquid crystal layer, disposed opposite to the silicon substrate and used to adjust light transmittance;
[0009] a color filter, disposed on a side of the liquid crystal layer away from the reflective electrode, the color filter being used to filter light of different colors; the color filter comprising a plurality of different color light regions;
[0010] A passivation layer is arranged between the silicon substrate and the liquid crystal layer, and is used to enhance the reflectivity of the incident light; the passivation layer includes a first film layer, a second film layer and a third film layer, and the second film layer is arranged between the first film layer and the third film layer; the thickness of the second film layer is different corresponding to different color light areas.
[0011] The above technical solution achieves the following technical effects: by providing the anti-crosstalk reflective portions at both ends of the main reflective surface, reflected light incident near the edge of the main reflective surface can be secondary reflected on the anti-crosstalk reflective surface, thereby achieving a convergence effect on reflected light incident at the edge of the main reflective surface. By converging the reflected light, optical crosstalk between adjacent reflective electrodes is effectively avoided, thereby reducing the limitations of reducing pixel area.
[0012] Preferably, the main reflection surface is a plane, and the anti-crosstalk reflection surface is a gradually changing concave arc surface; the main reflection surface is smoothly connected to the anti-crosstalk reflection surfaces provided at both ends thereof.
[0013] The above technical solution achieves the following technical effects: In this solution, the anti-crosstalk reflective surface is configured as a concave arc. As is well known, concave arcs converge light, concentrating the reflected light into a smaller area. When light is reflected from the concave arc, light incident at the edge of the reflective surface is focused within the light-emitting region corresponding to the reflective electrode, ultimately passing through the color filter region corresponding to the reflective electrode without causing crosstalk between adjacent pixels (adjacent electrodes).
[0014] Preferably, the main reflection surface is a plane, and an angle α is formed between the anti-crosstalk reflection surface and the main reflection surface.
[0015] Through the above technical solution, the technical effect achieved is: the anti-crosstalk reflection surface and the main reflection surface form an angle α with each other, so that the reflected light with an incident point near the edge of the main reflection surface can be reflected twice on the anti-crosstalk reflection surface. The direction of the reflected light is changed by the secondary reflection, so that the reflected light can be emitted from the color light area corresponding to the current reflection electrode.
[0016] Preferably, the angle α is in the range of 90° to 135°
[0017] Through the above technical solution, the technical effect achieved is: the angle α between the anti-crosstalk reflection surface and the main reflection surface is limited to 90°~135°, which is more conducive to making the reflected light with an incident point near the edge of the main reflection surface reflect twice on the anti-crosstalk reflection surface and then emitted at an angle close to perpendicular to the color filter, thereby enhancing the effect of preventing light crosstalk between adjacent pixels.
[0018] Preferably, the width of the reflective electrode is d1, and the bottom width of the anti-crosstalk reflective portion is 3% to 8% of d1.
[0019] Through the above technical solution, the technical effect achieved is: by limiting the bottom width of the anti-crosstalk reflection part within a smaller range, that is, limiting the thickness of the anti-crosstalk reflection part within a smaller range, the influence of the anti-crosstalk reflection surface on the reflectivity of the main reflection surface can be reduced.
[0020] Preferably, the thickness of the main reflection portion is d2, and the bottom width of the anti-crosstalk reflection portion is 5% d2 to 10% d2.
[0021] Through the above technical solution, the technical effect achieved is: by limiting the bottom width of the anti-crosstalk reflection part within a smaller range, that is, limiting the thickness of the anti-crosstalk reflection part within a smaller range, the influence of the anti-crosstalk reflection surface on the reflectivity of the main reflection surface can be reduced.
[0022] Preferably, the width of the top of the anti-crosstalk reflecting portion is 40% to 80% of the width of the bottom of the anti-crosstalk reflecting portion.
[0023] Through the above technical solution, the technical effect achieved is: the top of the anti-crosstalk reflecting part cannot be set to a pointed top (that is, the bottom width of the anti-crosstalk reflecting part is 0) to avoid the problem of tip discharge, thereby ensuring the stable operation of silicon-based liquid crystal.
[0024] Preferably, the height of the anti-crosstalk reflection portion is less than 1% d1.
[0025] The technical effect achieved by the above technical solution is: by limiting the height of the anti-crosstalk reflector to a smaller range, the anti-crosstalk reflector can improve the anti-crosstalk of light at the corners without causing excessive electric field distortion.
[0026] Preferably, the plurality of different color light regions include a red light region, a green light region and a blue light region.
[0027] The three reflective electrodes are provided on the silicon substrate, namely:
[0028] The first reflective electrode is arranged at a position corresponding to the red light area.
[0029] The second reflective electrode is arranged at a position corresponding to the green light area.
[0030] The third reflective electrode is arranged at a position corresponding to the blue light area.
[0031] The first film layer is disposed between the silicon substrate and the second film layer, and has a thickness of H;
[0032] Wherein, the second film layer includes:
[0033] The red light portion is provided at a position corresponding to the first reflective electrode, and has a thickness of h1.
[0034] The green light portion is provided at a position corresponding to the second reflective electrode, and the thickness of the green light portion is h2.
[0035] The blue light portion is arranged at a position corresponding to the third reflective electrode, and the thickness of the blue light portion is h3.
[0036] The ratio of the thickness of the green light portion to the thickness of the first film layer is h2 / H.
[0037] The ratio of the thickness of the red light portion to the thickness of the first film layer is h1 / H.
[0038] The ratio of the thickness of the blue light portion to the thickness of the first film layer is h3 / H.
[0039] The h2 / H is greater than h1 / H, and the h1 / H is greater than h3 / H.
[0040] The above technical solution achieves the following technical effects: Because the thickness of the second film layer and its thickness ratio to the first film layer have different effects on the R / G / B reflectivity, with a thicker second film layer favoring green light reflection and a thinner second film layer favoring blue light reflection, this solution adjusts the ratios of the thickness of the green, red, and blue portions of the second film layer to the thickness of the first film layer, thereby facilitating a simultaneous increase in the reflectivity of the three primary colors of red, green, and blue. This, in turn, simultaneously improves the R / G / B reflectivity of the LCOS device.
[0041] Preferably, the passivation layer further includes: the third film layer is arranged between the second film layer and the liquid crystal layer, and the side surface of the third film layer opposite to the liquid crystal layer is a plane.
[0042] Through the above technical solution, the technical effect achieved is: the side of the third film layer opposite to the liquid crystal layer is flat, which can achieve good adhesion between the third film layer and the liquid crystal layer; in addition, the third film layer can effectively protect the second film layer. BRIEF DESCRIPTION OF THE DRAWINGS
[0043] Figure 1 This is a partial structural diagram of a liquid crystal on silicon structure according to Example 1 of the present utility model;
[0044] Figure 2 This is a schematic structural diagram of the emitter electrode and the passivation layer in Example 1 of the present utility model;
[0045] Figure 3 This is a partial structural diagram of a liquid crystal on silicon structure according to Example 2 of the present utility model;
[0046] Figure 4 for Figure 3 Enlarged view of point A in the middle;
[0047] Figure 5 This is a partial structural diagram of a liquid crystal on silicon structure according to Example 3 of the present utility model;
[0048] Figure 6 Based Figure 5 Enlarged view of point B in the middle.
[0049] Reference numerals:
[0050] 1-Silicon substrate;
[0051] 2-reflecting electrode; 21-reflecting surface;
[0052] 23-main reflecting portion; 231-main reflecting surface;
[0053] 24-anti-crosstalk reflection portion; 241-anti-crosstalk reflection surface;
[0054] 25 - first reflective electrode; 26 - second reflective electrode; 27 - third reflective electrode; 28 - dielectric layer;
[0055] 3- liquid crystal layer;
[0056] 4-passivation layer; 41-first film layer; 42-second film layer; 43-third film layer
[0057] 421-Red Light Division; 422-Green Light Division; 423-Blue Light Division;
[0058] 5-color filter; 51-red light area; 52-green light area; 53-blue light area;
[0059] 6-Incident light. DETAILED DESCRIPTION
[0060] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the usual meanings understood by people with ordinary skills in the field to which the present invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Unless otherwise specified, the "connection" described in this article can be a direct connection or an indirect connection, that is, a connection through an intermediate.
[0061] Example 1
[0062] See also Figure 1-Figure 2 The first embodiment of the present invention provides a liquid crystal on silicon structure, comprising:
[0063] A silicon substrate 1 is provided with a reflective electrode 2 on its surface, the reflective electrode 2 including a main reflective portion 23 and an anti-crosstalk reflective portion 24; the anti-crosstalk reflective portions are provided at both ends of the main reflective portion; the main reflective portion is provided with a main reflective surface 231, and the anti-crosstalk reflective portion is provided with an anti-crosstalk reflective surface 241; the main reflective surface 231 and the anti-crosstalk reflective surface 241 constitute a reflective surface 21 for reflecting incident light; the reflective electrode 2 is used to reflect incident light 6 and to serve as a cathode electrode, cooperating with an anode electrode to modulate the liquid crystal phase; in this embodiment, the reflective electrode 2 is made of aluminum (Al), and the reflective surface 21 can be obtained by grinding.
[0064] The liquid crystal layer 3 is disposed opposite to the silicon substrate 1 and is used to adjust light transmittance. The anode electrode (not shown) is a transparent electrode and is disposed on a side of the liquid crystal layer 3 away from the silicon substrate 1 .
[0065] a color filter 5 disposed on a side of the liquid crystal layer 3 away from the reflective electrode 2, the color filter 5 being used to filter light of different colors; the color filter 5 comprising a plurality of different color light regions;
[0066] The passivation layer 4 is disposed between the silicon substrate 1 and the liquid crystal layer 3 and is used to enhance the reflectivity of the incident light 6. The passivation layer 4 includes a first film layer 41, a second film layer 42, and a third film layer 43. The second film layer is disposed between the first and third film layers. The thickness of the second film layer 42 varies for different color light zones.
[0067] In this embodiment, by providing the anti-crosstalk reflective portions at both ends of the main reflective surface, reflected light whose incident point is near the edge of the main reflective surface can be reflected twice on the anti-crosstalk reflective surface, thereby achieving a convergence effect on the reflected light whose incident point is at the edge of the main reflective surface. By converging the reflected light, the optical crosstalk problem caused by the light between pixels entering the reflective electrode 2 and then exiting from another pixel as the spacing between pixels decreases is effectively solved, further reducing the limitations on reducing the pixel area.
[0068] See also Figure 2 In this embodiment, the main reflection surface 231 is a plane, and the anti-crosstalk reflection surface 241 is a gradually changing concave arc surface; the main reflection surface 231 is smoothly connected to the anti-crosstalk reflection surfaces 241 provided at both ends thereof.
[0069] In the solution of this embodiment, the anti-crosstalk reflective surface 241 is set to a concave arc surface. As is well known, a concave arc surface has the characteristic of converging light and can concentrate the reflected light into a smaller area. When light is reflected on the concave arc surface, the reflected light at the edge of the reflective surface 21 can be converged into the light-emitting area corresponding to the reflective electrode 2, and finally can pass through the color filter 5 area corresponding to the reflective electrode 2 without causing light crosstalk between adjacent pixels (adjacent electrodes).
[0070] Furthermore, in this embodiment, the concave arc-shaped surface is specifically a concave cylindrical surface.
[0071] See also Figure 1-Figure 2 In this embodiment, the color filter 5 includes three different color light areas; the three different color light areas are a red light area 51, a green light area 52 and a blue light area 53.
[0072] The three reflective electrodes 2 are provided on the silicon substrate 1, namely:
[0073] The first reflective electrode 25 is disposed at a position corresponding to the red light area 51 .
[0074] The second reflective electrode 26 is disposed at a position corresponding to the green light region 52 .
[0075] The third reflective electrode 27 is disposed at a position corresponding to the blue light area 53 .
[0076] A dielectric layer 28 is provided between the three reflective electrodes 2 . The dielectric layer 28 is used as an insulating layer between the three reflective electrodes 2 . The material of the dielectric layer 28 can be silicon oxide, oxynitride or the like.
[0077] The first film layer 41 and the second film layer 42 are disposed between the reflective electrode 2 and the liquid crystal layer 3, wherein the first film layer 41 is close to the reflective electrode 2. The first film layer 41 and the second film layer 42 cooperate to enhance the reflectivity of the incident light 6. The thickness of the first film layer 41 is H.
[0078] Wherein, the second film layer 42 includes:
[0079] The red light portion 421 is disposed at a position corresponding to the first reflective electrode 25 , and the thickness of the red light portion 421 is h1 .
[0080] The green portion 422 is provided at a position corresponding to the second reflective electrode 26 , and the thickness of the green portion 422 is h2 .
[0081] The blue light portion 423 is disposed at a position corresponding to the third reflective electrode 27 , and a thickness of the blue light portion 423 is h3 .
[0082] The ratio of the thickness of the green portion 422 to the thickness of the first film layer 41 is h2 / H.
[0083] The ratio of the thickness of the red light portion 421 to the thickness of the first film layer 41 is h1 / H.
[0084] The ratio of the thickness of the blue light portion 423 to the thickness of the first film layer 41 is h3 / H.
[0085] The h2 / H is greater than h1 / H, and the h1 / H is greater than h3 / H.
[0086] In this embodiment, the thickness of the second film layer 42 has different effects on the R / G / B reflectivity, with a thicker second film layer 42 favoring green light reflection and a thinner second film layer 42 favoring blue light reflection. Therefore, the thickness ratios of the green portion 422, the red portion 421, and the blue portion 423 relative to the thickness of the first film layer 41 are adjusted accordingly. This helps to simultaneously improve the reflectivity of the three primary colors of red, green, and blue. This, in turn, simultaneously improves the R / G / B reflectivity of the LCOS device.
[0087] In this embodiment, the third film layer 43 is disposed between the second film layer 42 and the liquid crystal layer 3 to protect the second film layer 42. Furthermore, the side of the third film layer opposite to the liquid crystal layer is a flat surface; this flat surface allows the third film layer to be well bonded to the liquid crystal layer.
[0088] Furthermore, in this embodiment, the material of the first film layer 41 is a silicon oxide compound, specifically silicon dioxide; the material of the second film layer 42 is silicon nitride; and the material of the third film layer 43 is silicon oxide.
[0089] Example 2
[0090] See also Figure 3-Figure 4 The second embodiment of the present invention provides a liquid crystal on silicon structure. The difference between the second embodiment and the first embodiment is that the structure and shape of the reflective electrode 2 are different from those in the first embodiment, as follows:
[0091] In this embodiment, the reflective electrode 2 includes: a main reflective portion 23 and an anti-crosstalk reflective portion 24;
[0092] The main reflector 23 is provided with a main reflective surface 231 at its top; the anti-crosstalk reflector 24 is symmetrically disposed at both ends of the main reflective surface 231; the side of the anti-crosstalk reflector 24 that is closest to the main reflective surface 231 forms an anti-crosstalk reflective surface 241; the main reflective surface 231 and the anti-crosstalk reflective surface 241 constitute the reflective surface; and an angle α is formed between the anti-crosstalk reflective surface 241 and the main reflective surface 231. In this embodiment, by disposing the anti-crosstalk reflector 24 at both ends of the main reflective surface 231, reflected light incident near the edge of the main reflective surface 231 can be secondary reflected on the anti-crosstalk reflective surface 241, thereby achieving a convergence effect on the reflected light incident at the edge of the main reflective surface 231. By converging the reflected light, optical crosstalk between adjacent reflective electrodes 2 is effectively avoided.
[0093] Furthermore, in this embodiment, the angle α is 90 degrees. In the solution of this embodiment, the angle α between the anti-crosstalk reflective surface 241 and the main reflective surface 231 is set to 90 degrees, that is, the anti-crosstalk reflective surface 241 is perpendicular to the main reflective surface 231, so that the reflected light with an incident point near the edge of the main reflective surface 231 can be reflected twice on the anti-crosstalk reflective surface 241.
[0094] Example 3
[0095] See also Figure 5-Figure 6 The third embodiment of the present invention provides a liquid crystal on silicon structure; the difference between the third embodiment and the second embodiment is that:
[0096] In this embodiment, the angle α between the anti-crosstalk reflective surface 241 and the main reflective surface 231 is set to an obtuse angle, ranging from 90° to 135°. In this embodiment, α is specifically 100 degrees. In this embodiment, setting the angle α between the anti-crosstalk reflective surface 241 and the main reflective surface 231 to an obtuse angle allows reflected light incident near the edge of the main reflective surface 231 to be reflected twice on the anti-crosstalk reflective surface 241. This ensures that when light enters, there is no crosstalk between the light reflected from adjacent pixels, that is, the reflected light does not enter the area of adjacent pixels.
[0097] Furthermore, setting the angle α between the anti-crosstalk reflection surface 241 and the main reflection surface 231 to an obtuse angle is more conducive to allowing the reflected light with an incident point near the edge of the main reflection surface 231 to be reflected twice on the anti-crosstalk reflection surface 241 and then emitted at an angle close to perpendicular to the color filter 5, thereby enhancing the effect of preventing light crosstalk between adjacent pixels.
[0098] Furthermore, in this embodiment, the width of the reflective electrode 2 is d1, the thickness of the main reflective portion 23 is d2, the bottom width of the anti-crosstalk reflective portion 24 is 3% to 8% of d1, and the bottom width of the anti-crosstalk reflective portion 24 is 5% to 10% of d2. In this embodiment, the bottom width of the anti-crosstalk reflective portion 24 is 5% of d1. In this embodiment, by limiting the bottom width of the anti-crosstalk reflective portion 24 to a smaller range, that is, limiting the thickness of the anti-crosstalk reflective portion 24 to a smaller range, the impact of the anti-crosstalk reflective surface 241 on the reflectivity of the main reflective surface 231 can be reduced.
[0099] Specifically, as described in Example 1, the anti-crosstalk reflection portion 24 is symmetrically arranged at both ends of the main reflection surface 231, which is bound to reduce the area of the main reflection surface 231 to a certain extent, and limit the bottom width of the anti-crosstalk reflection portion 24 to a smaller range, which can achieve the purpose of anti-crosstalk without having a significant impact on the reflection surface area of the main reflection surface 231.
[0100] Please refer to Figure 6 In this embodiment, the width of the top of the anti-crosstalk reflective portion 24 is 40% to 80% of the bottom width of the anti-crosstalk reflective portion 24 . In this embodiment, the top of the anti-crosstalk reflective portion 24 cannot be set as a pointed top (i.e., the bottom width of the anti-crosstalk reflective portion 24 is zero) to avoid the problem of tip discharge, thereby ensuring the stable operation of the silicon-based liquid crystal. Furthermore, the anti-crosstalk reflective portion 24 is equivalent to a protrusion on the main reflective surface 231. This protrusion can enhance the control of the liquid crystal between adjacent pixel blocks and reduce the problem of crosstalk in the liquid crystal control between adjacent pixel blocks in the prior art. Because the top of the anti-crosstalk reflective portion 24 is closer to the anode electrode, the electric field strength between the top of the anti-crosstalk reflective portion 24 and the anode electrode is stronger, thereby having a stronger control effect on the liquid crystal molecules in the corresponding area of the liquid crystal layer 3.
[0101] Furthermore, in this embodiment, the height of the anti-crosstalk reflective portion 24 is less than 1% d1.
[0102] In this embodiment, the height of the anti-crosstalk reflective portion 24 is limited to account for its effect on the electric field strength between the reflective electrode 2 (cathode electrode) and the anode electrode. As discussed above, because the top of the anti-crosstalk reflective portion 24 is closer to the anode electrode, the electric field strength between the top of the anti-crosstalk reflective portion 24 and the anode electrode is stronger, thereby achieving a stronger control effect on the liquid crystal molecules in the corresponding region of the liquid crystal layer 3. However, the impact of this electric field distortion should not be too significant. By limiting the height of the anti-crosstalk reflective portion 24 to a smaller range, the anti-crosstalk reflective portion 24 can improve crosstalk prevention at corners without causing excessive electric field distortion.
[0103] In summary, by providing the reflective surface on the reflective electrode to prevent light crosstalk, the present invention effectively addresses the optical crosstalk problem caused by decreasing pixel spacing, where light from one pixel enters the reflective electrode and exits through another pixel. This further reduces the limitations on pixel size reduction. Furthermore, this solution adjusts the ratios of the thicknesses of the green, red, and blue portions of the second film layer to the thickness of the first film layer, facilitating a simultaneous increase in the reflectivity of the three primary colors (red, green, and blue). This in turn simultaneously improves the R / G / B reflectivity of the LCOS device. Therefore, the present invention effectively overcomes the shortcomings of the prior art and possesses high industrial value.
[0104] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.
Claims
1. A liquid crystal on silicon structure, characterized in that: include: A silicon substrate, wherein a reflective electrode is provided on a surface of the silicon substrate, and the reflective electrode includes a main reflective portion and an anti-crosstalk reflective portion; The anti-crosstalk reflecting portion is provided at both ends of the main reflecting portion; the main reflecting portion is provided with a main reflecting surface, and the anti-crosstalk reflecting portion is provided with an anti-crosstalk reflecting surface; The main reflecting surface and the anti-crosstalk reflecting surface constitute a reflecting surface for reflecting incident light; a liquid crystal layer, disposed opposite to the silicon substrate and used to adjust light transmittance; a color filter, disposed on a side of the liquid crystal layer away from the reflective electrode, the color filter being used to filter light of different colors; the color filter comprising a plurality of different color light regions; A passivation layer is arranged between the silicon substrate and the liquid crystal layer, and is used to enhance the reflectivity of the incident light; the passivation layer includes a first film layer, a second film layer and a third film layer, and the second film layer is arranged between the first film layer and the third film layer; the thickness of the second film layer is different corresponding to different color light areas.
2. The liquid crystal on silicon structure according to claim 1, wherein: The main reflection surface is a plane, and the anti-crosstalk reflection surface is a gradually changing concave arc surface; the main reflection surface is smoothly connected to the anti-crosstalk reflection surfaces arranged at both ends thereof.
3. The liquid crystal on silicon structure according to claim 1, wherein: The main reflection surface is a plane, and an angle α is formed between the anti-crosstalk reflection surface and the main reflection surface.
4. The liquid crystal on silicon structure according to claim 3, wherein: The angle α ranges from 90° to 135°.
5. The liquid crystal on silicon structure according to claim 4, wherein: The width of the reflective electrode is d1, and the bottom width of the anti-crosstalk reflective portion is 3% to 8% of d1.
6. The liquid crystal on silicon structure according to claim 5, wherein: The thickness of the main reflection portion is d2, and the bottom width of the anti-crosstalk reflection portion is 5% d2 to 10% d2.
7. The liquid crystal on silicon structure according to claim 6, wherein: The width of the top of the anti-crosstalk reflecting portion is 40% to 80% of the width of the bottom of the anti-crosstalk reflecting portion.
8. The liquid crystal on silicon structure according to claim 7, wherein: The height of the anti-crosstalk reflection portion is less than 1% d1.
9. The liquid crystal on silicon structure according to any one of claims 1 to 8, characterized in that: The multiple different color light areas include a red light area, a green light area and a blue light area; The three reflective electrodes are provided on the silicon substrate, namely: A first reflective electrode is arranged at a position corresponding to the red light area; a second reflective electrode, arranged at a position corresponding to the green light area; a third reflective electrode, arranged at a position corresponding to the blue light area; The first film layer is disposed between the silicon substrate and the second film layer, and has a thickness of H; The second film layer includes: A red light portion is provided at a position corresponding to the first reflective electrode, and the thickness of the red light portion is h1; a green portion, provided at a position corresponding to the second reflective electrode, wherein the thickness of the green portion is h2; a blue light portion, disposed at a position corresponding to the third reflective electrode, and having a thickness of h3; The ratio of the thickness of the green portion to the thickness of the first film layer is h2 / H; The ratio of the thickness of the red light portion to the thickness of the first film layer is h1 / H; The ratio of the thickness of the blue light portion to the thickness of the first film layer is h3 / H; The h2 / H is greater than h1 / H, and the h1 / H is greater than h3 / H.
10. The liquid crystal on silicon structure according to claim 9, wherein: The third film layer is arranged between the second film layer and the liquid crystal layer, and a side surface of the third film layer opposite to the liquid crystal layer is a plane.