Device heat dissipation device and electronic equipment

Abstract

The embodiment of the utility model provides a device heat dissipation device and electronic equipment. The device comprises at least one semiconductor device, a radiator and at least one radiation absorption part, one end of the semiconductor device is attached to the radiator through the heat conduction part, so that parasitic capacitance is formed between one end of the semiconductor device and the radiator; and the other end of the semiconductor device is electrically connected with the radiator through the radiation absorption component to form a parallel branch for connecting two ends of the semiconductor device. The method is used for achieving the effect of reducing the electromagnetic radiation of the device heat dissipation device.

Description

Technical Field

[0001] The present application relates to semiconductor device heat dissipation technology, and in particular to a device heat dissipation device and electronic equipment. Background Art

[0002] In the field of power electronics, common semiconductor devices include insulated gate bipolar transistors (IGBTs), insulated gate field effect transistors (MOSFETs), thyristors, diodes, etc. These semiconductor devices may generate a lot of heat during operation.

[0003] Currently, device heat dissipation systems attach the electrodes of these semiconductor devices to a heat sink via a thermally conductive sheet, transferring heat outward. Heat sinks are commonly made of aluminum or copper, and are typically ungrounded, acting as a suspended metal. The thermally conductive sheet between the semiconductor device and the heat sink creates parasitic capacitance, which transfers the varying potential of the semiconductor device into the heat sink. The suspended metal heat sink acts as a high-frequency antenna, and as an antenna structure, it becomes the primary carrier of radiation emissions from power electronics. This approach presents the problem of significant electromagnetic radiation from the device heat sink. Utility Model Content

[0004] The embodiments of the present application provide a device heat dissipation device and an electronic device, which are used to reduce the electromagnetic radiation of the heat dissipation device.

[0005] In a first aspect, an embodiment of the present application provides a device heat dissipation apparatus, comprising: at least one semiconductor device, a heat sink, and at least one radiation absorbing component;

[0006] One end of the semiconductor device is attached to the heat sink via a heat conducting component to form a parasitic capacitor between the one end of the semiconductor device and the heat sink;

[0007] The other end of the semiconductor device is electrically connected to the heat sink through the radiation absorbing component to form a parallel branch connecting the two ends of the semiconductor device.

[0008] Optionally, the radiation absorbing component comprises a resistive element;

[0009] The other end of the semiconductor device is electrically connected to one end of the resistive element, and the other end of the resistive element is electrically connected to the heat sink.

[0010] Optionally, the radiation absorbing component includes a resistive element and a capacitive element;

[0011] The resistive element and the capacitive element are connected in series.

[0012] Optionally, the radiation absorbing component comprises a capacitive element;

[0013] The other end of the semiconductor device is electrically connected to one end of the capacitive element, and the other end of the capacitive element is electrically connected to the heat sink.

[0014] Optionally, the at least one semiconductor device includes a first semiconductor device and a second semiconductor device; the at least one radiation absorbing component includes a first radiation absorbing component and a second radiation absorbing component;

[0015] One end of the first semiconductor device is electrically connected to one end of the second semiconductor device, and is applied to the heat sink via a heat conducting component;

[0016] The other end of the first semiconductor device is electrically connected to the heat sink through the first radiation absorbing component to form a first parallel branch connecting the two ends of the first semiconductor device;

[0017] The other end of the second semiconductor device is electrically connected to the heat sink through the second radiation absorbing component to form a second parallel branch connecting the two ends of the second semiconductor device.

[0018] Optionally, the at least one semiconductor device includes a first semiconductor device and a second semiconductor device; the at least one radiation absorbing component includes a first radiation absorbing component;

[0019] One end of the first semiconductor device and one end of the second semiconductor device are both attached to the heat sink via a heat conducting component;

[0020] The other end of the first semiconductor device is electrically connected to the other end of the second semiconductor device, and is electrically connected to the heat sink through the first radiation absorbing component to form a first parallel branch connecting the two ends of the first semiconductor device, and a second parallel branch connecting the two ends of the second semiconductor device.

[0021] Optionally, the at least one semiconductor device includes a first semiconductor device and a second semiconductor device; the radiation absorbing component includes a second radiation absorbing component;

[0022] One end of the first semiconductor device is attached to the heat sink via a heat conducting component;

[0023] The other end of the first semiconductor device is connected to one end of the second semiconductor device and is applied to the heat sink via a heat conducting component;

[0024] The other end of the second semiconductor device is electrically connected to the heat sink through the second radiation absorbing component to form a second parallel branch connecting the two ends of the second semiconductor device.

[0025] Optionally, the radiation absorbing component further comprises a first radiation absorbing component;

[0026] The other end of the first semiconductor device is also electrically connected to the heat sink through the first radiation absorbing component to form a first parallel branch connecting the two ends of the first semiconductor device.

[0027] Optionally, the semiconductor device includes any one of the following: MOSFET, IGBT, thyristor, diode.

[0028] Optionally, the resistive element includes any one of the following: a resistor, a magnetic bead.

[0029] In a second aspect, an embodiment of the present application provides an electronic device, comprising: a device heat dissipation device as described in any one of the first aspects.

[0030] In the device heat dissipation device and electronic device provided in the embodiments of the present application, one end of the semiconductor device is applied to the heat sink via a heat-conducting component, and a radiation-absorbing component is connected between the other end of the semiconductor device and the heat sink, thereby forming a parallel branch connecting the two terminals of the semiconductor device. When a spike oscillation is generated during the conduction or disconnection process of the two terminals of the semiconductor device, the electromagnetic radiation of the device heat dissipation device is reduced by a technical means of absorbing the energy of the spike oscillation through the parallel branch. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0032] Figure 1 A schematic diagram of an application scenario involved in an embodiment of the present application;

[0033] Figure 2 is a schematic diagram of a device heat sink arrangement;

[0034] Figure 3 is a schematic diagram of another device heat dissipation device;

[0035] Figure 4 A schematic structural diagram of a device heat dissipation device provided in an embodiment of the present application;

[0036] Figure 5 A schematic structural diagram of another device heat dissipation device provided in an embodiment of the present application;

[0037] Figure 6A schematic structural diagram of a third device heat dissipation device provided in an embodiment of the present application;

[0038] Figure 7 A schematic structural diagram of a fourth device heat dissipation device provided in an embodiment of the present application;

[0039] Figure 8 A schematic structural diagram of a fifth device heat dissipation device provided in an embodiment of the present application;

[0040] Figure 9 A schematic structural diagram of a sixth device heat dissipation device provided in an embodiment of the present application;

[0041] Figure 10 A schematic structural diagram of a seventh device heat dissipation device provided in an embodiment of the present application;

[0042] Figure 11 A schematic structural diagram of an eighth device heat dissipation device provided in an embodiment of the present application;

[0043] Figure 12 A schematic structural diagram of a ninth device heat dissipation device provided in an embodiment of the present application;

[0044] Figure 13 A schematic structural diagram of a tenth device heat dissipation device provided in an embodiment of the present application;

[0045] Figure 14 This is a schematic structural diagram of the eleventh device heat dissipation device provided in an embodiment of the present application.

[0046] Description of reference numerals:

[0047] 1: semiconductor device; 11: first semiconductor device; 12: second semiconductor device; 2: heat sink; 3: heat conducting component; 4: radiation absorbing component; 41: resistive element; 42: capacitive element; 43: first radiation absorbing component; 44: second radiation absorbing component.

[0048] The above drawings illustrate specific embodiments of the present application, which will be described in more detail below. These drawings and the textual description are not intended to limit the scope of the present application in any way, but rather to illustrate the concepts of the present application to those skilled in the art by reference to specific embodiments. DETAILED DESCRIPTION

[0049] Exemplary embodiments will be described in detail herein, with examples illustrated in the accompanying drawings. In the following description, when referring to the drawings, identical numerals in different figures represent identical or similar elements, unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.

[0050] Figure 1 This is a schematic diagram of an application scenario involved in an embodiment of the present application, such as Figure 1 As shown, the specific application scenario of this application is heat dissipation of semiconductor devices.

[0051] The semiconductor device 1 may be, for example, any device that can be turned on or off by a voltage or current, and may include, for example, an insulated gate bipolar transistor (IGBT), an insulated gate field effect transistor (MOSFET), a thyristor, a diode, or the like. The heat sink 2 may be, for example, any device that can conduct heat, and may include, for example, an aluminum heat sink, a copper heat sink, or the like. The heat conducting component 3 may be, for example, any non-conductive device that can improve the heat dissipation efficiency of the device, and may include, for example, thermally conductive silicone, a thermally conductive sheet, or the like.

[0052] When operating, semiconductor device 1 typically functions as a high-frequency switch, turning on or off under the influence of current or voltage. Semiconductor device 1 may generate a large amount of heat during operation. Currently, device heat dissipation devices typically attach one conductive terminal of semiconductor device 1 to heat sink 2 via thermally conductive component 3. For example, when semiconductor device 1 is an IGBT, the collector may be attached to heat sink 2 via thermally conductive component 3; when semiconductor device 1 is a MOSFET, the drain may be attached to heat sink 2 via thermally conductive component 3; when semiconductor device 1 is a diode, the cathode may be attached to heat sink 2 via thermally conductive component 3. Attaching the conductive terminal of semiconductor device 1 to heat sink 2 via thermally conductive component 3 allows heat generated by semiconductor device 1 to be transferred to the outside world, thereby preventing damage to semiconductor device 1 due to overheating and extending its service life.

[0053] Typically, heat sink 2 is ungrounded and exists as a suspended metal. Both the conductive terminals of semiconductor device 1 and heat sink 2 are conductive surfaces. The thermally conductive component 3 located between these two conductive surfaces generates parasitic capacitance Cp. This potential changes when semiconductor device 1 is turned on or off under the influence of voltage or current. For ease of illustration, some embodiments of this application may use parasitic capacitance instead of thermally conductive component 3 to illustrate the electrical connection relationship.

[0054] Figure 2 This is a schematic diagram of a device heat dissipation device. Figure 2 As shown, semiconductor device 1 is an IGBT as an example for schematic illustration. For example, when the IGBT is turned on or off, a voltage rise or fall is formed. The rapid changes in current and voltage will generate voltage spikes on the parasitic capacitor Cp, which may cause oscillation. The parasitic capacitor Cp can introduce the above-mentioned changing potential into the heat sink 2. The heat sink 2 acts as a suspended metal and becomes a high-frequency antenna. As an antenna structure, the heat sink 2 becomes the main carrier of radiation emission of power electronic products. The heat sink 2 usually has a larger electrical size to provide better heat dissipation performance. However, the larger electrical size of the heat sink 2 also provides higher gain for radiation emission, thereby generating larger high-frequency electromagnetic radiation.

[0055] It should be understood that the conductive terminals of the semiconductor devices described in the embodiments of the present application are connected to the power supply or the ground, and the conductive terminals can be connected to the power supply or the ground through resistors, etc., and the specific connection can be made according to the actual circuit. The embodiments of the present application only provide schematic illustrations of the devices related to the present application, and do not limit whether the circuit composed of semiconductor devices in the specific implementation also has other devices and other functions.

[0056] Figure 3 This is a schematic diagram of another device heat dissipation device. Figure 3 As shown, the radiator 2 is connected to the ground PGND to reduce the electromagnetic radiation emitted by the radiator 2 to the outside world. However, this method will cause a large amount of high-frequency current to enter the ground, thereby forming low-frequency conducted emissions, causing greater interference to the ground.

[0057] In summary, how to reduce the electromagnetic radiation of the device heat dissipation device without causing interference to the ground is an urgent problem to be solved.

[0058] In view of this, the present application proposes a device heat dissipation device, which connects a radiation absorbing component between the other end of the semiconductor device and the heat sink to form a parallel branch connecting the two terminals of the semiconductor device. When a spike oscillation occurs during the conduction or disconnection of the two terminals of the semiconductor device, the energy of the spike oscillation is absorbed by the parallel branch to reduce the electromagnetic radiation of the heat sink.

[0059] The following specific embodiments describe in detail the technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0060] Figure 4This is a schematic diagram of the structure of a device heat dissipation device provided in an embodiment of the present application. Figure 4 As shown, the device includes: at least one semiconductor device 1 , a heat sink 2 , and at least one radiation absorbing component 4 .

[0061] The radiation absorbing component 4 can be, for example, any component capable of absorbing electromagnetic radiation. For example, it can include a resistive element, a capacitive element, or a resistive element in series with a capacitive element. The resistive element can be, for example, an element with impedance, such as a resistor or a magnetic bead. The capacitive element can be, for example, an element capable of storing and releasing charge, such as a capacitor. For ease of explanation, a resistor is also referred to as a resistor, and a capacitor is also referred to as a capacitor.

[0062] One end of the semiconductor device 1 is applied to the heat sink 2 through the heat conducting component 3 to form a parasitic capacitance between the one end of the semiconductor device 1 and the heat sink 2; the other end of the semiconductor device 1 is electrically connected to the heat sink 2 through the radiation absorbing component 4 to form a parallel branch connecting the two ends of the semiconductor device 1.

[0063] When semiconductor device 1 is turned on or off under the action of voltage or current, generating a changing potential and causing spike oscillations, parasitic capacitance Cp can transmit the common-mode interference caused by the spike oscillations. It transmits the common-mode interference from semiconductor device 1 to heat sink 2, which then transmits it into space through electromagnetic radiation. Radiation absorbing component 4 conducts the common-mode interference back to semiconductor device 1. Radiation absorbing component 4 also has the effect of absorbing oscillation energy and can quickly attenuate spike oscillations. Therefore, heat sink 2 becomes a connecting conductor of the parallel branch, a node in the differential mode current loop, and not a path for common-mode interference. This eliminates the possibility of heat sink 2 becoming an antenna, thereby reducing the radiation emission of the device's heat dissipation device.

[0064] To summarize, in the device heat dissipation device proposed in the embodiment of the present application, one end of the semiconductor device is applied to the heat sink through a heat-conducting component, and a radiation-absorbing component is connected between the other end of the semiconductor device and the heat sink to form a parallel branch connecting the two terminals of the semiconductor device. When a spike oscillation occurs during the conduction or disconnection of the two terminals of the semiconductor device, the technical means of absorbing the energy of the spike oscillation through the parallel branch reduces the electromagnetic radiation of the device heat dissipation device. This method does not introduce interference into the ground, and therefore will not cause interference to the ground.

[0065] Possible implementations of the radiation absorbing component 4 are described below.

[0066] (1) The radiation absorbing component 4 includes a resistive element 41. One end of the semiconductor device 1 is applied to the heat sink 2 through the heat conducting component 3. The other end of the semiconductor device 1 is electrically connected to one end of the resistive element 41, and the other end of the resistive element 41 is electrically connected to the heat sink 2.

[0067] At this time, the parasitic capacitance Cp between the semiconductor device 1 and the heat sink 2 is connected in series with the resistive element 41 to form a parallel branch connecting the two ends of the semiconductor device 1 .

[0068] There is a spike oscillation during the on- or off-process of the semiconductor device 1 . At this time, the parallel branch formed by the parasitic capacitor Cp and the resistive element 41 plays a damping and absorption effect, suppressing the spike and quickly attenuating the oscillation, thereby reducing high-frequency electromagnetic radiation.

[0069] In one example, when the resistance of the resistive element 41 is 0 ohm, the parasitic capacitor Cp forms a parallel branch connecting the two ends of the semiconductor device 1. This branch suppresses the rate of change of the voltage rising and falling edges through pure capacitive absorption, thereby reducing high-frequency electromagnetic radiation.

[0070] Figure 5 This is a schematic diagram of the structure of another device heat dissipation device provided in an embodiment of the present application. Figure 5 As shown, the application scenario corresponding to the semiconductor device 1 is a MOSFET, and the radiation absorbing component 4 including the resistor R is taken as an example for schematic description.

[0071] The drain of the MOSFET is attached to the heat sink 2 via a thermally conductive component 3, forming a parasitic capacitor Cp between the drain of the MOSFET and the heat sink 2. The source of the MOSFET is electrically connected to one end of a resistor R, the other end of which is electrically connected to the heat sink 2. The parasitic capacitor Cp between the MOSFET and the heat sink 2 is connected in series with the resistor R, forming a parallel branch connecting the drain and source of the MOSFET.

[0072] In one example, when the MOSFET is turned on or off, the rapid changes in current and voltage generate voltage spikes on the parasitic capacitor Cp, which can cause oscillations. At this time, the parasitic capacitor Cp transmits the common-mode interference to the heat sink 2, and the resistor R directs the common-mode interference back to the MOSFET. At the same time, the parallel branch formed by the parasitic capacitor Cp and the resistor R acts as a damping absorber, suppressing the spikes and quickly attenuating the oscillations. The heat sink 2 becomes the connecting conductor of the parallel branch and a node in the differential-mode current loop, eliminating the possibility of the heat sink 2 becoming an antenna and reducing high-frequency electromagnetic radiation.

[0073] In one example, when the resistance of resistor R is 0 ohms, the parasitic capacitor Cp forms a parallel branch connecting the drain and source of the MOSFET. This branch suppresses the rate of change of the voltage rising and falling edges through pure capacitive absorption, reducing high-frequency electromagnetic radiation.

[0074] Figure 6 This is a schematic diagram of the structure of the third device heat dissipation device provided in the embodiment of the present application. Figure 6As shown, the application scenario corresponding to the semiconductor device 1 is an IGBT, and the radiation absorbing component 4 including the resistor R is taken as an example for schematic description.

[0075] The IGBT's collector is attached to the heat sink 2 via a heat-conducting component 3, forming a parasitic capacitance Cp between the IGBT's collector and the heat sink 2. The IGBT's emitter is electrically connected to one end of a resistor R, the other end of which is electrically connected to the heat sink 2. The parasitic capacitance Cp between the IGBT and the heat sink 2 is connected in series with the resistor R, forming a parallel branch connecting the collector and emitter of the IGBT.

[0076] In one example, when an IGBT is turned on or off, the rapid changes in current and voltage generate voltage spikes on the parasitic capacitor Cp, which can cause oscillations. At this point, the RC snubber circuit formed by the parasitic capacitor Cp and the resistor R acts as a damping absorber, suppressing the spikes and rapidly attenuating the oscillations, thereby reducing high-frequency electromagnetic radiation.

[0077] In one example, when the resistance of resistor R is 0 ohms, the parasitic capacitor Cp forms a parallel branch connecting the collector and emitter of the IGBT. This branch suppresses the rate of change of the voltage rising and falling edges through pure capacitive absorption, thereby reducing high-frequency electromagnetic radiation.

[0078] Figure 7 This is a schematic diagram of the structure of the fourth device heat dissipation device provided in the embodiment of the present application. Figure 7 As shown, the application scenario corresponding to the semiconductor device 1 being a diode is schematically illustrated by taking the radiation absorbing component 4 including the resistor R as an example.

[0079] The cathode of the diode is attached to the heat sink 2 via the heat conducting component 3, forming a parasitic capacitance Cp between the cathode of the diode and the heat sink 2. The anode of the diode is electrically connected to one end of the resistor R, and the other end of the resistor R is electrically connected to the heat sink 2. The parasitic capacitance Cp between the diode and the heat sink 2 is connected in series with the resistor R, forming a parallel branch connecting the cathode and anode of the diode.

[0080] In one example, when a diode turns on or off, the rapid changes in current and voltage generate voltage spikes on the parasitic capacitor Cp, which can cause oscillations. The parallel branch formed by the parasitic capacitor Cp and the resistor R acts as a damping absorber, suppressing the spikes and rapidly attenuating the oscillations, thereby reducing high-frequency electromagnetic radiation.

[0081] In one example, when the resistance of resistor R is 0 ohms, the parasitic capacitor Cp forms a parallel branch connecting the cathode and anode of the diode. This branch suppresses the rate of change of the voltage rising and falling edges through pure capacitive absorption, thereby reducing high-frequency electromagnetic radiation.

[0082] (2) The radiation absorbing component 4 includes a resistive element 41 and a capacitive element 42. One end of the semiconductor device 1 is applied to the heat sink 2 through the thermal conductive component 3. The resistive element 41 and the capacitive element 42 are connected in series. The other end of the semiconductor device 1 is electrically connected to one end of the series structure, and the other end of the series structure is electrically connected to the heat sink 2.

[0083] In one example, the other end of the semiconductor device 1 is electrically connected to one end of the resistive element 41 , the other end of the resistive element 41 is electrically connected to one end of the capacitive element 42 , and the other end of the capacitive element 42 is electrically connected to the heat sink 2 .

[0084] In another example, the other end of the semiconductor device 1 is electrically connected to one end of the capacitive element 42 , the other end of the capacitive element 42 is electrically connected to one end of the resistive element 41 , and the other end of the resistive element 41 is electrically connected to the heat sink 2 .

[0085] At this time, the parasitic capacitance Cp between the semiconductor device 1 and the heat sink 2 is connected in series with the resistive element 41 and the capacitive element 42 to form a parallel branch connecting the two ends of the semiconductor device 1 .

[0086] When the semiconductor device 1 is turned on or off, there is a spike oscillation. At this time, the parallel branch formed by the parasitic capacitor Cp, the resistive element 41 and the capacitive element 42 plays a damping absorption effect, suppressing the spike and quickly attenuating the oscillation, thereby reducing high-frequency electromagnetic radiation.

[0087] In one example, when the resistance of the resistive element 41 is 0 ohms, the parasitic capacitor Cp and the capacitive element 42 form a parallel branch connecting the two ends of the semiconductor device 1. This branch suppresses the rate of change of the voltage rising and falling edges through pure capacitive absorption, thereby reducing high-frequency electromagnetic radiation.

[0088] With this implementation, when one end of the semiconductor device 1 is directly connected to the heat sink 2 or the heat-conducting component 3 is damaged by breakdown, causing the parasitic capacitance Cp to be short-circuited, an RC absorption circuit can still be formed in the parallel branch, thereby avoiding the problem of the resistive element 41 being directly connected in parallel at both ends of the semiconductor device 1, causing overcurrent damage to the resistive element 41, and further improving the reliability of the device heat dissipation device.

[0089] Figure 8 This is a schematic diagram of the structure of the fifth device heat dissipation device provided in the embodiment of the present application. Figure 8 As shown, corresponding to the application scenario where the semiconductor device 1 is a MOSFET, the radiation absorbing component 4 includes a resistive element 41 as a resistor R and a capacitive element 42 as a capacitor C as an example for schematic description.

[0090] The drain of the MOSFET is attached to the heat sink 2 through the heat conducting component 3, and a parasitic capacitance Cp is formed between the drain of the MOSFET and the heat sink 2; Figure 8For illustration, an example is provided in which the source of a MOSFET is electrically connected to one end of a resistor R, the other end of the resistor R is electrically connected to one end of a capacitor C, and the other end of the capacitor C is electrically connected to a heat sink 2. In this case, the parasitic capacitance Cp between the MOSFET and the heat sink 2 is connected in series with the resistor R and the capacitor C, forming a parallel branch connecting the drain and source of the MOSFET.

[0091] In one example, when a MOSFET is turned on or off, the rapid changes in current and voltage generate voltage spikes on the parasitic capacitor Cp, which can cause oscillations. The parallel branch formed by the parasitic capacitor Cp, resistor R, and capacitor C acts as a damping absorber, suppressing the spikes and rapidly attenuating the oscillations, thereby reducing high-frequency electromagnetic radiation.

[0092] In this example, capacitor C acts as a DC blocking capacitor. When the drain of the MOSFET and the heat sink 2 are directly connected intentionally or unintentionally or the heat-conducting component 3 between them is damaged by breakdown, the parasitic capacitor Cp is short-circuited. At this time, the parallel branch formed by the resistor R and the capacitor C has the effect of damping and absorption, suppressing spikes and quickly attenuating oscillations, reducing high-frequency electromagnetic radiation, and preventing the parasitic capacitor Cp from being short-circuited. The resistor R is directly connected in parallel between the drain and source of the MOSFET, causing the resistor R to be damaged due to excessive current, further improving the reliability of the device's heat dissipation device.

[0093] In one example, when the resistance of resistor R is 0 ohms, the parasitic capacitor Cp and capacitor C form a parallel branch connecting the drain and source of the MOSFET. This branch suppresses the rate of change of the voltage rising and falling edges through pure capacitive absorption, reducing high-frequency electromagnetic radiation.

[0094] In this example, when the drain of the MOSFET is directly connected to the heat sink 2, the parasitic capacitance Cp no longer exists. The capacitor C forms a parallel branch connecting the drain and source of the MOSFET. This branch suppresses the rate of change of the voltage rising and falling edges through pure capacitive absorption, thereby reducing high-frequency electromagnetic radiation.

[0095] Figure 9 This is a schematic diagram of the structure of the sixth device heat dissipation device provided in the embodiment of the present application. Figure 9 As shown, corresponding to the application scenario where the semiconductor device 1 is a MOSFET, the radiation absorbing component 4 includes a resistive element 41 as a resistor R and a capacitive element 42 as a capacitor C as an example for schematic description.

[0096] The drain of the MOSFET is attached to the heat sink 2 through the heat conducting component 3, and a parasitic capacitance Cp is formed between the drain of the MOSFET and the heat sink 2; Figure 9The following is a schematic illustration of an example in which the source of the MOSFET is electrically connected to one end of the capacitor C, the other end of the capacitor C is electrically connected to one end of the resistor R, and the other end of the resistor R is electrically connected to the heat sink 2 .

[0097] In this way, the resistor R and the heat sink 2 form an equipotential connection and are isolated from the source and drain of the MOSFET. Because the capacitor C and the parasitic capacitor Cp are isolated, the risk of damage to the resistor R due to overcurrent and overvoltage is further avoided. Figure 8 The device heat sink shown further improves reliability.

[0098] Similarly, when the resistance of resistor R is 0 ohms, the parasitic capacitance Cp and the capacitor C form a parallel branch connecting the drain and source of the MOSFET. This branch suppresses the rate of change of the voltage rising and falling edges through pure capacitive absorption, thereby reducing high-frequency electromagnetic radiation.

[0099] (3) The radiation absorbing component 4 includes a capacitive element 42; one end of the semiconductor device 1 is applied to the heat sink 2 through the heat conducting component 3, the other end of the semiconductor device 1 is electrically connected to one end of the capacitive element 42, and the other end of the capacitive element 42 is electrically connected to the heat sink 2.

[0100] At this time, the parasitic capacitance Cp between the semiconductor device 1 and the heat sink 2 is connected in series with the capacitive element 42 to form a parallel branch connecting the two ends of the semiconductor device 1 .

[0101] There are spike oscillations when the semiconductor device 1 is turned on or off. At this time, the parallel branch formed by the parasitic capacitor Cp and the capacitive element 42 suppresses the rate of change of the voltage rising and falling edges through pure capacitive absorption, thereby reducing high-frequency electromagnetic radiation.

[0102] Figure 10 This is a schematic diagram of the structure of the seventh device heat dissipation device provided in the embodiment of the present application. Figure 10 As shown, the application scenario corresponding to the semiconductor device 1 is a MOSFET, and the radiation absorbing component 4 includes a capacitive element 42 as a capacitor C as an example for schematic description.

[0103] The MOSFET's drain is attached to the heat sink 2 via a thermally conductive component 3, forming a parasitic capacitor Cp between the MOSFET's drain and the heat sink 2. For illustration purposes, consider an example where the MOSFET's source is electrically connected to one end of capacitor C, and the other end of capacitor C is electrically connected to the heat sink 2. In this case, the parasitic capacitor Cp between the MOSFET and the heat sink 2 is connected in series with capacitor C, forming a parallel branch connecting the MOSFET's drain and source.

[0104] In one example, when a MOSFET is turned on or off, the rapid changes in current and voltage generate voltage spikes on the parasitic capacitor Cp, which can cause oscillations. In this case, the pure capacitive absorption branch formed by the parasitic capacitor Cp and the capacitor C suppresses the rate of change of the voltage rising and falling edges, reducing high-frequency electromagnetic radiation.

[0105] In this example, when the drain of the MOSFET is directly connected to the heat sink 2, the parasitic capacitance Cp no longer exists. At this time, the parallel branch formed by the capacitor C suppresses the rate of change of the voltage rising and falling edges through pure capacitive absorption, thereby reducing high-frequency electromagnetic radiation.

[0106] It should be understood that the device heat dissipation apparatus provided in the embodiments of the present application is also applicable to application scenarios in which the semiconductor device 1 is an IGBT, thyristor, diode, or other device. One end of the IGBT, thyristor, or diode is applied to the heat sink 2 via a heat-conducting component 3, and the other end of the IGBT, thyristor, or diode is connected to the heat sink 2 via a radiation-absorbing component 4, forming a parallel branch connecting the two ends of the semiconductor device 1. This parallel branch absorbs the energy of the peak oscillation generated by the IGBT, thyristor, or diode during the turn-on or turn-off process, thereby reducing the radiation emission of the heat sink. For details, please refer to the implementation methods of the above embodiments and will not be repeated here.

[0107] It should be understood that the device heat sink provided in the embodiments of the present application is applicable not only to applications involving a single semiconductor device 1, but also to applications involving multiple semiconductor devices 1. The embodiments of the present application do not limit the number of semiconductor devices 1 included in the device heat sink, and the number can be set based on actual needs. The following schematically illustrates how the embodiments of the present application reduce radiated emissions from the device heat sink, corresponding to an application scenario involving two semiconductor devices 1.

[0108] In power electronics topologies, two semiconductor devices 1 are often connected in series and mounted on the same heat sink 2. The following describes possible implementations of the radiation absorbing component 4 when two semiconductor devices 1 are mounted on the same heat sink 2.

[0109] (1) at least one semiconductor device 1 includes a first semiconductor device 11 and a second semiconductor device 12; at least one radiation absorbing component 4 includes a first radiation absorbing component 43 and a second radiation absorbing component 44;

[0110] One end of the first semiconductor device 11 is electrically connected to one end of the second semiconductor device 12 and is applied to the heat sink 2 via the heat conducting component 3;

[0111] The other end of the first semiconductor device 11 is electrically connected to the heat sink 2 through the first radiation absorbing component 43 to form a first parallel branch connecting the two ends of the first semiconductor device 11; the first parallel branch can suppress the peak oscillation during the conduction or disconnection process of the first semiconductor device 11 and reduce high-frequency electromagnetic radiation.

[0112] The other end of the second semiconductor device 12 is electrically connected to the heat sink 2 via the second radiation absorbing component 44, forming a second parallel branch connecting the two ends of the second semiconductor device 12. The second parallel branch can suppress the peak oscillation during the conduction or disconnection process of the second semiconductor device 12, thereby reducing high-frequency electromagnetic radiation.

[0113] Figure 11 This is a schematic diagram of the structure of the eighth device heat dissipation device provided in the embodiment of the present application. Figure 11 As shown, corresponding to the application scenario where the first semiconductor device 11 is a MOSFET switch tube A and the second semiconductor device 12 is a MOSFET switch tube B, a schematic illustration is given by taking the first radiation absorbing component 43 including a resistor R1 and a capacitor C1 and the second radiation absorbing component 44 including a resistor R2 and a capacitor C2 as an example.

[0114] The drain of MOSFET switch tube A and the drain of MOSFET switch tube B are electrically connected and applied to the same heat sink 2 via a heat conducting component 3. A parasitic capacitor Cp is formed between the drain of MOSFET switch tube A and the drain of MOSFET switch tube B and the heat sink 2. The source of MOSFET switch tube A is electrically connected to one end of capacitor C1, the other end of capacitor C1 is electrically connected to resistor R1, and the other end of resistor R1 is electrically connected to heat sink 2. Parasitic capacitor Cp, resistor R1, and capacitor C1 form a first parallel branch connecting the drain and source of MOSFET switch tube A.

[0115] The source of the MOSFET switch tube B is electrically connected to one end of the capacitor C2, the other end of the capacitor C2 is electrically connected to one end of the resistor R2, and the other end of the resistor R2 is electrically connected to the heat sink 2; the parasitic capacitor Cp, the resistor R2, and the capacitor C2 constitute a second parallel branch connecting the drain and source of the MOSFET switch tube B.

[0116] In one example, when MOSFET switch A is turned on or off, a spike oscillation occurs. The parallel branch formed by parasitic capacitance Cp, resistor R1, and capacitor C1 acts as a damping absorber, suppressing the spike and rapidly damping the oscillation, thereby reducing high-frequency electromagnetic radiation. When MOSFET switch B is turned on or off, a spike oscillation occurs. The parallel branch formed by parasitic capacitance Cp, resistor R2, and capacitor C2 acts as a damping absorber, suppressing the spike and rapidly damping the oscillation, thereby reducing high-frequency electromagnetic radiation.

[0117] Continue as Figure 11As shown, in a possible implementation, the series connection order of the resistor R1 and the capacitor C1 can be interchanged. For example, the source of the MOSFET switch tube A is electrically connected to one end of the resistor R1, the other end of the resistor R1 is electrically connected to one end of the capacitor C1, and the other end of the capacitor C1 is electrically connected to the heat sink 2.

[0118] Continue as Figure 11 As shown, in a possible implementation, the series connection order of the resistor R2 and the capacitor C2 can be interchanged. For example, the source of the MOSFET switch tube B is electrically connected to one end of the resistor R2, the other end of the resistor R2 is electrically connected to one end of the capacitor C2, and the other end of the capacitor C2 is electrically connected to the heat sink 2.

[0119] Continue as Figure 11 As shown, in one possible implementation, the first radiation absorbing component 43 includes a resistor R1, and the second radiation absorbing component 44 includes a resistor R2 and a capacitor C2. The first parallel branch, formed by the RC absorption circuit of resistor R1 and parasitic capacitor Cp, provides a damping absorption effect, suppressing the spike oscillations generated during the turn-on and turn-off of MOSFET switch A and reducing high-frequency electromagnetic radiation. The second parallel branch, formed by the RC absorption circuit of resistor R2, capacitor C2, and parasitic capacitor Cp, provides a damping absorption effect, suppressing the spike oscillations generated during the turn-on and turn-off of MOSFET switch B and reducing high-frequency electromagnetic radiation. This approach can further simplify the number of components. Furthermore, the resistance value of resistor R1 can be 0 ohms. The first parallel branch, formed by the pure capacitive absorption branch of parasitic capacitor Cp, suppresses the rate of change of the voltage rising and falling edges generated during the turn-on and turn-off of MOSFET switch A, reducing high-frequency electromagnetic radiation. And / or, the resistance value of resistor R2 can be 0 ohms. The second parallel branch is a pure capacitive absorption branch composed of capacitor C2 and parasitic capacitor Cp, which suppresses the rate of change of the voltage rising and falling edges generated during the conduction or disconnection of the MOSFET switch tube B, thereby reducing high-frequency electromagnetic radiation.

[0120] Continue as Figure 11As shown, in one possible implementation, the first radiation absorbing component 43 includes a resistor R1 and a capacitor C1, and the second radiation absorbing component 44 includes a resistor R2. The first parallel branch, formed by the RC absorption circuit of resistor R1, capacitor C1, and parasitic capacitor Cp, provides a damping absorption effect, suppressing the spike oscillations generated during the turn-on and turn-off of MOSFET switch A and reducing high-frequency electromagnetic radiation. The second parallel branch, formed by the RC absorption circuit of resistor R2 and parasitic capacitor Cp, provides a damping absorption effect, suppressing the spike oscillations generated during the turn-on and turn-off of MOSFET switch B and reducing high-frequency electromagnetic radiation. This approach can further simplify the number of components. Furthermore, the resistance value of resistor R1 can be 0 ohms. The first parallel branch, formed by the pure capacitive absorption branch of capacitor C1 and parasitic capacitor Cp, suppresses the rate of change of the voltage rising and falling edges generated during the turn-on and turn-off of MOSFET switch A, reducing high-frequency electromagnetic radiation. And / or, the resistance value of resistor R2 can be 0 ohms. The second parallel branch is a pure capacitive absorption branch formed by the parasitic capacitor Cp, which suppresses the rate of change of the voltage rising and falling edges generated during the conduction or disconnection process of the MOSFET switch tube B, thereby reducing high-frequency electromagnetic radiation.

[0121] Continue as Figure 11 As shown in the figure, in one possible implementation, the first radiation absorbing component 43 includes a capacitor C1. In this case, the first parallel branch, through the pure capacitive absorption branch formed by capacitor C1 and parasitic capacitor Cp, suppresses the rate of change of the voltage rising and falling edges generated during the conduction or disconnection of MOSFET switch tube A, thereby reducing high-frequency electromagnetic radiation.

[0122] Continue as Figure 11 As shown in the figure, in one possible implementation, the second radiation absorbing component 44 includes a capacitor C2. In this case, the second parallel branch, through the pure capacitive absorption branch formed by capacitor C2 and parasitic capacitor Cp, suppresses the rate of change of the voltage rising and falling edges generated during the conduction or disconnection of MOSFET switch tube B, thereby reducing high-frequency electromagnetic radiation.

[0123] (2) the at least one semiconductor device includes a first semiconductor device 11 and a second semiconductor device 12; the at least one radiation absorbing component 4 includes a first radiation absorbing component 43;

[0124] One end of the first semiconductor device 11 and one end of the second semiconductor device 12 are both attached to the heat sink 2 through the heat conducting component 3;

[0125] The other end of the first semiconductor device 11 is electrically connected to the other end of the second semiconductor device 12, and is electrically connected to the heat sink 2 through the first radiation absorbing component 43, so as to form a first parallel branch connecting the two ends of the first semiconductor device 11, and a second parallel branch connecting the two ends of the second semiconductor device 12.

[0126] The first parallel branch can suppress the peak oscillation during the on / off process of the first semiconductor device 11 and reduce high-frequency electromagnetic radiation. The second parallel branch can suppress the peak oscillation during the on / off process of the second semiconductor device 12 and reduce high-frequency electromagnetic radiation.

[0127] Figure 12 This is a schematic diagram of the structure of the ninth device heat dissipation device provided in the embodiment of the present application. Figure 12 As shown, corresponding to the application scenario where the first semiconductor device 11 is a MOSFET switch tube A and the second semiconductor device 12 is a MOSFET switch tube B, the first radiation absorbing component 43 including a resistor R and a capacitor C is used as an example for schematic description.

[0128] The drain of MOSFET switch tube A and the drain of MOSFET switch tube B are both applied to the heat sink 2 through the heat conducting component 3. A parasitic capacitor Cp1 is formed between the drain of MOSFET switch tube A and the heat sink 2, and a parasitic capacitor Cp2 is formed between the drain of MOSFET switch tube B and the heat sink 2.

[0129] The source of MOSFET switch A is electrically connected to the source of MOSFET switch B and to one end of capacitor C. The other end of capacitor C is electrically connected to one end of resistor R, and the other end of resistor R is electrically connected to heat sink 2. Parasitic capacitor Cp1, resistor R, and capacitor C form a first parallel branch connecting the drain and source of MOSFET switch A. Parasitic capacitor Cp2, resistor R, and capacitor C form a second parallel branch connecting the drain and source of MOSFET switch B.

[0130] In one example, when MOSFET switch A is turned on or off, a spike oscillation occurs. The parallel branch formed by parasitic capacitance Cp1, resistor R, and capacitor C acts as a damping absorber, suppressing the spike and rapidly damping the oscillation, thereby reducing high-frequency electromagnetic radiation. When MOSFET switch B is turned on or off, a spike oscillation occurs. The parallel branch formed by parasitic capacitance Cp2, resistor R, and capacitor C acts as a damping absorber, suppressing the spike and rapidly damping the oscillation, thereby reducing high-frequency electromagnetic radiation.

[0131] Continue as Figure 12 As shown, in a possible implementation, the series connection order of the resistor R and the capacitor C can be interchanged. For example, the source of the MOSFET switch tube A is electrically connected to the source of the MOSFET switch tube B, and is electrically connected to one end of the resistor R, the other end of the resistor R is electrically connected to one end of the capacitor C, and the other end of the capacitor C is electrically connected to the heat sink 2.

[0132] Continue as Figure 12As shown, in one possible implementation, the first radiation absorption component 43 includes a resistor R. The source of MOSFET switch tube A is electrically connected to the source of MOSFET switch tube B, and is electrically connected to one end of resistor R. The other end of resistor R is electrically connected to heat sink 2. Parasitic capacitor Cp1 and resistor R form a first parallel branch connecting the drain and source of MOSFET switch tube A. The RC absorption circuit formed by the first parallel branch has a damping absorption effect, suppressing the peak oscillation generated during the conduction or disconnection of MOSFET switch tube A, and reducing high-frequency electromagnetic radiation. Parasitic capacitor Cp2 and resistor R form a second parallel branch connecting the drain and source of MOSFET switch tube B. The RC absorption circuit formed by the second parallel branch has a damping absorption effect, suppressing the peak oscillation generated during the conduction or disconnection of MOSFET switch tube B, and reducing high-frequency electromagnetic radiation. This implementation can further simplify the number of components.

[0133] Furthermore, the resistance value of resistor R can be 0 ohms. The first parallel branch, through the parasitic capacitor Cp1, forms a pure capacitive absorption branch, which suppresses the rate of change of the rising and falling voltage edges generated during the conduction or disconnection of MOSFET switch tube A, thereby reducing high-frequency electromagnetic radiation. The second parallel branch, through the parasitic capacitor Cp2, forms a pure capacitive absorption branch, which suppresses the rate of change of the rising and falling voltage edges generated during the conduction or disconnection of MOSFET switch tube B, thereby reducing high-frequency electromagnetic radiation.

[0134] Continue as Figure 12 As shown, in a possible implementation, the first radiation absorbing component 43 includes a capacitor C. The source of the MOSFET switch tube A is electrically connected to the source of the MOSFET switch tube B, and is electrically connected to one end of the capacitor C, and the other end of the capacitor C is electrically connected to the heat sink 2. The parasitic capacitor Cp1 and the capacitor C constitute a first parallel branch connecting the drain and source of the MOSFET switch tube A; the first parallel branch suppresses the rate of change of the voltage rising and falling edges generated during the conduction or disconnection of the MOSFET switch tube A by pure capacitive absorption, thereby reducing high-frequency electromagnetic radiation. The parasitic capacitor Cp2 and the capacitor C constitute a second parallel branch connecting the drain and source of the MOSFET switch tube B; the second parallel branch suppresses the rate of change of the voltage rising and falling edges generated during the conduction or disconnection of the MOSFET switch tube B by pure capacitive absorption, thereby reducing high-frequency electromagnetic radiation.

[0135] (3) the at least one semiconductor device 1 includes a first semiconductor device 11 and a second semiconductor device 12; the radiation absorbing component 4 includes a second radiation absorbing component 44;

[0136] One end of the first semiconductor device 11 is attached to the heat sink 2 via the heat conducting component 3;

[0137] The other end of the first semiconductor device 11 is connected to one end of the second semiconductor device 12 and is applied to the heat sink 2 through the heat conducting component 3;

[0138] The other end of the second semiconductor device 12 is electrically connected to the heat sink 2 via a second radiation absorbing component 44, forming a second parallel branch connecting the two ends of the second semiconductor device 12. The second parallel branch can suppress spike oscillations during the turn-on and turn-off processes of the second semiconductor device 12. The heat sink 2 becomes part of the absorption circuit of the second semiconductor device 12, destroying the conditions for the heat sink 2 to function as an antenna and reducing high-frequency electromagnetic radiation.

[0139] Figure 13 This is a schematic diagram of the structure of the tenth device heat dissipation device provided in the embodiment of the present application. Figure 13 As shown, corresponding to the application scenario where the first semiconductor device 11 is a MOSFET switch tube A and the second semiconductor device 12 is a MOSFET switch tube B, the second radiation absorbing component 44 includes a resistor R and a capacitor C as an example for schematic description.

[0140] The drain of MOSFET switch tube A and the drain of MOSFET switch tube B are both applied to the heat sink 2 through the heat conducting component 3. A parasitic capacitor Cp1 is formed between the drain of MOSFET switch tube A and the heat sink 2, and a parasitic capacitor Cp2 is formed between the drain of MOSFET switch tube B and the heat sink 2.

[0141] The source of MOSFET switch tube A and the drain of MOSFET switch tube B are electrically connected.

[0142] The source of MOSFET switch tube B is electrically connected to one end of capacitor C. The other end of capacitor C is connected to one end of resistor R. The other end of resistor R is electrically connected to heat sink 2. Parasitic capacitor Cp2, resistor R, and capacitor C form a second parallel branch connecting the drain and source of MOSFET switch tube B.

[0143] In one example, there is a spike oscillation when the MOSFET switch tube B is turned on or off. At this time, the parallel branch composed of the parasitic capacitor Cp2, the resistor R, and the capacitor C plays a damping absorption effect, suppressing the spike and quickly attenuating the oscillation. The heat sink 2 becomes part of the absorption circuit of the MOSFET switch tube B, destroying the conditions for the heat sink 2 to become an antenna and reducing high-frequency electromagnetic radiation.

[0144] Continue as Figure 13 As shown, in a possible implementation, the series connection order of the resistor R and the capacitor C can be interchanged. For example, the source of the MOSFET switch tube B is electrically connected to one end of the resistor R, the other end of the resistor R is electrically connected to one end of the capacitor C, and the other end of the capacitor C is electrically connected to the heat sink 2.

[0145] Continue as Figure 13 As shown in the figure, in one possible implementation, the second radiation absorption component 44 includes a resistor R. The source of the MOSFET switch tube B is electrically connected to one end of the resistor R, and the other end of the resistor R is electrically connected to the heat sink 2. The parasitic capacitor Cp2 and the resistor R form a second parallel branch connecting the drain and source of the MOSFET switch tube B. The RC absorption circuit formed by the second parallel branch has a damping absorption effect, suppressing the spike oscillation generated during the conduction and disconnection of the MOSFET switch tube B. The heat sink 2 becomes part of the absorption circuit of the MOSFET switch tube B, eliminating the condition for the heat sink 2 to act as an antenna and reducing high-frequency electromagnetic radiation. This implementation can further simplify the number of components.

[0146] Furthermore, the resistance value of resistor R can be 0 ohms. The second parallel branch forms a pure capacitive absorption branch through parasitic capacitor Cp2, which suppresses the rate of change of the rising and falling edges of the voltage generated during the conduction or disconnection process of MOSFET switch tube B. Heat sink 2 becomes part of the absorption circuit of MOSFET switch tube B, destroying the conditions for heat sink 2 to become an antenna and reducing high-frequency electromagnetic radiation.

[0147] Continue as Figure 13 As shown, in one possible implementation, the second radiation absorption component 44 includes a capacitor C. The source of the MOSFET switch tube B is electrically connected to one end of the capacitor C, and the other end of the capacitor C is electrically connected to the heat sink 2. The parasitic capacitor Cp2 and the capacitor C form a second parallel branch connecting the drain and source of the MOSFET switch tube B. This second parallel branch suppresses the rate of change of the rising and falling voltage edges generated during the conduction and disconnection of the MOSFET switch tube B through pure capacitive absorption. The heat sink 2 becomes part of the absorption circuit of the MOSFET switch tube B, destroying the condition for the heat sink 2 to act as an antenna and reducing high-frequency electromagnetic radiation.

[0148] (iv) the at least one semiconductor device 1 includes a first semiconductor device 11 and a second semiconductor device 12; the radiation absorbing component 4 includes a first radiation absorbing component 43 and a second radiation absorbing component 44;

[0149] One end of the first semiconductor device 11 is attached to the heat sink 2 via the heat conducting component 3;

[0150] The other end of the first semiconductor device 11 is connected to one end of the second semiconductor device 12 and is applied to the heat sink 2 through the heat conducting component 3;

[0151] The other end of the first semiconductor device 11 is also electrically connected to the heat sink 2 via the first radiation absorbing component 43, forming a first parallel branch connecting the two ends of the first semiconductor device 11. The first parallel branch can suppress spike oscillations during the turn-on or turn-off process of the first semiconductor device 11, thereby reducing high-frequency electromagnetic radiation.

[0152] The other end of the second semiconductor device 12 is electrically connected to the heat sink 2 via the second radiation absorbing component 44, forming a second parallel branch connecting the two ends of the second semiconductor device 12. The second parallel branch can suppress the peak oscillation during the conduction or disconnection process of the second semiconductor device 12, thereby reducing high-frequency electromagnetic radiation.

[0153] Figure 14 This is a schematic diagram of the structure of the eleventh device heat dissipation device provided in the embodiment of the present application. Figure 14 As shown, corresponding to the application scenario where the first semiconductor device 11 is a MOSFET switch tube A and the second semiconductor device 12 is a MOSFET switch tube B, a schematic illustration is given by taking the first radiation absorbing component 43 including a resistor R1 and a capacitor C1 and the second radiation absorbing component 44 including a resistor R2 and a capacitor C2 as an example.

[0154] The drain of MOSFET switch tube A and the drain of MOSFET switch tube B are both applied to the heat sink 2 through the heat conducting component 3. A parasitic capacitor Cp1 is formed between the drain of MOSFET switch tube A and the heat sink 2, and a parasitic capacitor Cp2 is formed between the drain of MOSFET switch tube B and the heat sink 2.

[0155] The source of MOSFET switch tube A and the drain of MOSFET switch tube B are electrically connected.

[0156] The source of MOSFET switch A is electrically connected to one end of capacitor C1. The other end of capacitor C1 is connected to one end of resistor R1, and the other end of resistor R1 is electrically connected to heat sink 2. Resistor R1 and capacitor C1 are connected in series to form a second radiation absorbing element 44. This second radiation absorbing element 44 is connected in parallel with parasitic capacitor Cp2, again creating an RC absorption circuit effect. The RC absorption circuit is further connected in series with parasitic capacitor Cp1, forming a first parallel branch connecting the drain and source of MOSFET switch A.

[0157] The source of MOSFET switch B is electrically connected to one end of capacitor C2. The other end of capacitor C2 is connected to one end of resistor R2, and the other end of resistor R2 is electrically connected to heat sink 2. Resistor R1 and capacitor C1 are connected in series to form a first radiation absorbing element 43. This first radiation absorbing element 43 is connected in parallel with parasitic capacitor Cp2, again creating the effect of an RC absorption circuit. The RC absorption circuit, in turn, is connected in series with resistor R2 and capacitor C2 to form a second parallel branch connecting the drain and source of MOSFET switch B.

[0158] In one example, MOSFET switch A experiences spike oscillations during its turn-on or turn-off process. The first parallel branch acts as a damping absorber, suppressing the spikes and rapidly damping the oscillations, thereby reducing high-frequency electromagnetic radiation. MOSFET switch B experiences spike oscillations during its turn-on or turn-off process. The second parallel branch acts as a damping absorber, suppressing the spikes and rapidly damping the oscillations, thereby reducing high-frequency electromagnetic radiation.

[0159] Continue as Figure 14 As shown, in a possible implementation, the series connection order of the resistor R1 and the capacitor C1 can be interchanged. For example, the source of the MOSFET switch tube A is electrically connected to one end of the resistor R1, the other end of the resistor R1 is electrically connected to one end of the capacitor C1, and the other end of the capacitor C1 is electrically connected to the heat sink 2.

[0160] Continue as Figure 14 As shown, in a possible implementation, the series connection order of the resistor R2 and the capacitor C2 can be interchanged. For example, the source of the MOSFET switch tube B is electrically connected to one end of the resistor R2, the other end of the resistor R2 is electrically connected to one end of the capacitor C2, and the other end of the capacitor C2 is electrically connected to the heat sink 2.

[0161] Continue as Figure 14 As shown in the figure, in one possible implementation, the first radiation absorbing component 43 includes a resistor R1, and the second radiation absorbing component 44 includes a resistor R2 and a capacitor C2. The first parallel branch, which is connected in parallel with the resistor R1 and the parasitic capacitor Cp2, is then connected in series with the parasitic capacitor Cp1. This RC absorption circuit provides a damping absorption effect, suppressing the spike oscillations generated during the turn-on and turn-off of the MOSFET switch A, thereby reducing high-frequency electromagnetic radiation.

[0162] The second parallel branch is connected in parallel with the resistor R1 and the parasitic capacitor Cp2, and then in series with the resistor R2 and the capacitor C2. The RC absorption circuit formed has the effect of damping absorption, suppressing the peak oscillation generated during the conduction or disconnection of the MOSFET switch tube B, and reducing high-frequency electromagnetic radiation.

[0163] Furthermore, the resistance of resistor R1 can be 0 ohm. The first parallel branch forms a pure capacitive absorption branch through the parasitic capacitor Cp1, which suppresses the rate of change of the voltage rising edge and falling edge generated during the conduction or disconnection of MOSFET switch tube A, thereby reducing high-frequency electromagnetic radiation. Alternatively, the resistance of resistor R2 can be 0 ohm, and the resistance of resistor R1 is not 0 ohm. The second parallel branch forms an RC absorption circuit through the capacitor C2, the resistor R1, and the parasitic capacitor Cp2 to achieve the effect of damping absorption, suppressing the spike oscillation generated during the conduction or disconnection of MOSFET switch tube B, thereby reducing high-frequency electromagnetic radiation. Alternatively, the resistance values ​​of resistor R2 and resistor R1 are both 0 ohm, and the second parallel branch forms a pure capacitive absorption branch through the capacitor C2, which suppresses the rate of change of the voltage rising edge and falling edge generated during the conduction or disconnection of MOSFET switch tube B, thereby reducing high-frequency electromagnetic radiation.

[0164] Continue as Figure 14 As shown in the figure, in one possible implementation, the first radiation absorbing component 43 includes a resistor R1 and a capacitor C1, and the second radiation absorbing component 44 includes a resistor R2. The first parallel branch, formed by the RC absorption circuit composed of the resistor R1, capacitor C1, parasitic capacitors Cp2, and parasitic capacitors CP1, provides a damping absorption effect, suppressing the spike oscillations generated during the turn-on and turn-off of MOSFET switch A and reducing high-frequency electromagnetic radiation. The second parallel branch, formed by the RC absorption circuit composed of the resistor R2, parasitic capacitor Cp2, resistor R1, and capacitor C1, provides a damping absorption effect, suppressing the spike oscillations generated during the turn-on and turn-off of MOSFET switch B and reducing high-frequency electromagnetic radiation. This approach can further simplify the number of components. Furthermore, the resistance value of resistor R1 can be 0 ohms. The first parallel branch, formed by the pure capacitive absorption branch composed of the capacitor C1, parasitic capacitors Cp2, and parasitic capacitors CP1, suppresses the rate of change of the voltage rising and falling edges generated during the turn-on and turn-off of MOSFET switch A, thereby reducing high-frequency electromagnetic radiation. Alternatively, the resistance value of resistor R2 can be 0 ohms, and the resistance value of resistor R1 is not 0 ohms. The second parallel branch, through the RC absorption circuit formed by parasitic capacitor Cp2, capacitor C1, and resistor R1, has a damping absorption effect, suppressing the spike oscillation generated during the conduction or disconnection of MOSFET switch tube B, thereby reducing high-frequency electromagnetic radiation. Alternatively, the resistance values ​​of resistors R1 and R2 are both 0 ohms, and the second parallel instruction forms a pure capacitive absorption branch through parasitic capacitor Cp2 and capacitor C1, suppressing the rate of change of the voltage rising and falling edges generated during the conduction or disconnection of MOSFET switch tube B, thereby reducing high-frequency electromagnetic radiation.

[0165] Continue as Figure 14As shown in the figure, in one possible implementation, the first radiation absorbing component 43 includes a capacitor C1, and the second radiation absorbing component 44 includes a capacitor C2. In this case, the first parallel branch, through the pure capacitive absorption branch formed by capacitor C1, parasitic capacitor Cp2, and parasitic capacitor Cp1, suppresses the rate of change of the rising and falling edges of the voltage generated during the conduction or disconnection of MOSFET switch A, thereby reducing high-frequency electromagnetic radiation. In this case, the second parallel branch, through the pure capacitive absorption branch formed by capacitor C2, parasitic capacitor Cp2, and capacitor C1, suppresses the rate of change of the rising and falling edges of the voltage generated during the conduction or disconnection of MOSFET switch B, thereby reducing high-frequency electromagnetic radiation.

[0166] It should be understood that the device heat dissipation device provided in the embodiment of the present application is also applicable to application scenarios where the semiconductor device 1 includes two IGBTs or two thyristors or two diodes, etc. One end of the two IGBTs or two thyristors or two diodes is applied to the heat sink 2 through the heat-conducting component 3, and the other end of the two IGBTs or two thyristors is electrically connected to the heat sink 2 through the radiation absorption component 4, forming a parallel branch connecting the two ends of the IGBT or thyristor or diode, suppressing the peak oscillation generated by the IGBT or thyristor or diode during the conduction or disconnection process, and reducing the radiation emission of the heat sink. For details, please refer to the description of the above-mentioned embodiment, which will not be repeated here.

[0167] An embodiment of the present application further provides an electronic device, including a device heat dissipation device.

[0168] Finally, it should be noted that those skilled in the art will readily conceive of other embodiments of the present invention after considering the specification and practicing the invention disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention that follow the general principles of the invention and include common knowledge or customary techniques in the art not disclosed herein. It is not limited to the precise structure described above and illustrated in the drawings, and various modifications and variations may be made without departing from the scope of the invention. The scope of the invention is limited solely by the appended claims.

Claims

1. A device heat dissipation device, characterized in that: include: at least one semiconductor device, a heat sink, and at least one radiation absorbing component; One end of the semiconductor device is attached to the heat sink via a heat conducting component to form a parasitic capacitor between the one end of the semiconductor device and the heat sink; The other end of the semiconductor device is electrically connected to the heat sink through the radiation absorbing component to form a parallel branch connecting the two ends of the semiconductor device.

2. The device according to claim 1, characterized in that The radiation absorbing component includes a resistive element; The other end of the semiconductor device is electrically connected to one end of the resistive element, and the other end of the resistive element is electrically connected to the heat sink.

3. The device according to claim 1, characterized in that The radiation absorbing component includes a resistive element and a capacitive element; The resistive element and the capacitive element are connected in series.

4. The device according to claim 1, characterized in that The radiation absorbing component includes a capacitive element; The other end of the semiconductor device is electrically connected to one end of the capacitive element, and the other end of the capacitive element is electrically connected to the heat sink.

5. The device according to claim 1, characterized in that The at least one semiconductor device includes a first semiconductor device and a second semiconductor device; the at least one radiation absorbing component includes a first radiation absorbing component and a second radiation absorbing component; One end of the first semiconductor device is electrically connected to one end of the second semiconductor device, and is applied to the heat sink via a heat conducting component; The other end of the first semiconductor device is electrically connected to the heat sink through the first radiation absorbing component to form a first parallel branch connecting the two ends of the first semiconductor device; The other end of the second semiconductor device is electrically connected to the heat sink through the second radiation absorbing component to form a second parallel branch connecting the two ends of the second semiconductor device.

6. The device according to claim 1, characterized in that The at least one semiconductor device includes a first semiconductor device and a second semiconductor device; the at least one radiation absorbing component includes a first radiation absorbing component; One end of the first semiconductor device and one end of the second semiconductor device are both attached to the heat sink via a heat conducting component; The other end of the first semiconductor device is electrically connected to the other end of the second semiconductor device, and is electrically connected to the heat sink through the first radiation absorbing component to form a first parallel branch connecting the two ends of the first semiconductor device, and a second parallel branch connecting the two ends of the second semiconductor device.

7. The device according to claim 1, characterized in that The at least one semiconductor device includes a first semiconductor device and a second semiconductor device; the radiation absorbing component includes a second radiation absorbing component; One end of the first semiconductor device is attached to the heat sink via a heat conducting component; The other end of the first semiconductor device is connected to one end of the second semiconductor device and is attached to the heat sink via a heat conducting component; The other end of the second semiconductor device is electrically connected to the heat sink through the second radiation absorbing component to form a second parallel branch connecting the two ends of the second semiconductor device.

8. The device according to claim 7, characterized in that The radiation absorbing component further comprises a first radiation absorbing component; The other end of the first semiconductor device is also electrically connected to the heat sink through the first radiation absorbing component to form a first parallel branch connecting the two ends of the first semiconductor device.

9. The device according to claim 1, characterized in that The semiconductor device includes any one of the following: MOSFET, IGBT, thyristor, diode.

10. The device according to claim 2 or 3, characterized in that The resistive element includes any one of the following: a resistor and a magnetic bead.

11. An electronic device, characterized in that: include: A device heat dissipation device according to any one of claims 1 to 10.

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