Atomic layer deposition gas uniformizing mechanism and deposition equipment

Abstract

The utility model discloses an atomic layer deposition gas uniformizing mechanism which comprises a gas inlet pipe for introducing gas for deposition, the lower end of the gas inlet pipe is connected with a gas uniformizing plate through a closed cavity, gas uniformizing holes are formed in the gas uniformizing plate, and a plurality of gas uniformizing holes are arranged in a scattering manner by taking the gas inlet pipe as the center. The scattering shape mainly conforms to the characteristic that inlet air of the air inlet pipe dispersedly flows to the periphery, so that the air flow is more uniform. The three gas inlet pipes are arranged, gas uniformizing is conducted through the gas uniformizing plate, gas uniformizing holes in the gas uniformizing plate are in a scattering shape with the gas inlet pipes as the center, the diameter is gradually increased in the direction away from the center, the density is also increased, and therefore the gas uniformizing effect is guaranteed. The main flow guide grooves and the branch flow guide grooves in the flow guide plate are combined with the air uniformizing holes, so that the air uniformizing effect is improved. Unreacted gas is pumped away in time through the gas pumping holes, and the gas is circumferentially distributed around the substrate, so that the gas pumping is more uniform and rapid.

Description

Technical Field

[0001] The utility model relates to the field of atomic layer deposition gas homogenization, in particular to an atomic layer deposition gas homogenization mechanism and deposition equipment. Background Art

[0002] ALD atomic layer deposition is a thin film deposition method that evenly "wraps" layers of sub-nanometer thick films on the surface of an object. The atomic layer deposition equipment exposes different reaction sources to the surface of the substrate alternately, and chemically adsorbs and reacts on the surface to form a deposited film. The reaction source needs to be heated before entering the reaction chamber to prevent the reaction source from solidifying or cooling in the pipeline prematurely. Currently, after the gas enters through the pipeline, it will directly contact the substrate and diffuse around the contact point. The gas density and flow rate also decrease as the diffusion diameter increases, which causes uneven gas deposition and reduces the deposition effect. Therefore, how to make the air intake more uniform and improve the gas uniformity effect is an urgent problem that technicians in this field need to solve. Utility Model Content

[0003] The purpose of the present invention is to provide an atomic layer deposition gas homogenization mechanism and a deposition device to solve the problems raised in the above background technology.

[0004] To achieve the above objectives, the present invention provides the following technical solution: an atomic layer deposition gas homogenization mechanism comprising an inlet pipe for introducing deposition gas, the lower end of the inlet pipe being connected to a homogenizing plate through a closed cavity. The homogenizing plate is provided with a plurality of homogenizing holes arranged in a scattered pattern centered on the inlet pipe. The scattered pattern is primarily due to the characteristic of the inlet pipe's airflow being dispersed in all directions, resulting in a more uniform airflow.

[0005] Preferably, the diameter of the air-leveling holes increases gradually in the direction away from the corresponding air inlet pipe. The air flow is large near the air inlet pipe and the holes are smaller, while the air flow is small at a greater distance and the holes are larger, thereby ensuring the air-leveling effect.

[0006] Preferably, the density of the air-leveling holes increases gradually in the direction away from the air inlet pipe. The airflow pressure is low at places far from the air inlet pipe, and the problem of low pressure is compensated by increasing the density, thereby achieving airflow balance.

[0007] Preferably, the air intake pipes are provided in plurality, and may be three, to ensure the air intake effect.

[0008] Preferably, a gas flow guiding mechanism is further provided between the air uniformity plate and the air inlet pipe, so as to facilitate the dispersed flow of gas, reduce the concentration of air flow pressure and achieve uniform gas flow.

[0009] Preferably, the guide mechanism includes a guide plate connected to the air inlet pipe, and a main flow channel connected to the air inlet pipe is formed at the lower end of the guide plate, and the main flow channel is connected to branched sub-flow channels. The main flow channel guides the airflow in all directions, while the sub-flow channels make the airflow distribution more uniform.

[0010] Preferably, the main guide groove is in a V-shape or a Feng-shape, and the sub-guide grooves are in a U-shape that are connected together. This makes the airflow more uniform.

[0011] Preferably, the depth of the sub-guiding groove is smaller than the depth of the main guiding groove, so as to ensure that the main guiding groove is more unobstructed.

[0012] Preferably, the workbench on which the substrate is placed is provided with exhaust holes at equal intervals around the substrate to ensure more uniform exhaust and better effect in coordination with the air intake.

[0013] A deposition device comprises the above-mentioned atomic layer deposition gas homogenizing mechanism.

[0014] Compared with the prior art, the beneficial effects of the present invention are:

[0015] 1. Three air inlet pipes are set here, and the air is evenly distributed through the air distribution plate. The air distribution holes on the air distribution plate are scattered with the air inlet pipe as the center, and the diameter gradually increases in the direction away from the center, and the density also increases, thereby ensuring the air distribution effect;

[0016] 2. The main flow groove and sub-flow groove on the guide plate, combined with the use of uniform air holes, improve the uniform air effect;

[0017] 3. The exhaust holes allow unreacted gases to be extracted in time and are distributed circumferentially around the substrate, making the exhaust more uniform and rapid. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic diagram of the structure of the utility model;

[0019] Figure 2 This is an exploded view of the utility model;

[0020] Figure 3 This is a bottom view of the deflector of the utility model;

[0021] Figure 4 This is a schematic structural diagram of the air extraction hole of the present utility model;

[0022] Figure 5 Schematic diagram of the structure of the deposition equipment.

[0023] In the figure: 1. Inlet pipe; 2. Air uniformity plate; 3. Air uniformity hole; 4. Guide plate; 5. Main flow channel; 6. Sub-flow channel; 7. Exhaust hole. DETAILED DESCRIPTION

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present utility model in conjunction with the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts shall fall within the protection scope of the present utility model.

[0025] Please refer to Figures 1 to 5 , the present utility model provides a technical solution for an atomic layer deposition gas homogenizing mechanism and a deposition device: an atomic layer deposition gas homogenizing mechanism includes an intake pipe 1 for introducing deposition gas. Multiple intake pipes 1 can be provided, for example, three, to ensure the intake effect. The lower end of the intake pipe 1 is connected to a gas homogenizing plate 2 through a closed cavity. The gas homogenizing plate 2 is provided with gas homogenizing holes 3, and the gas homogenizing holes 3 are arranged in a scattered manner centered on the intake pipe 1. The reason for the scattered arrangement is mainly to conform to the characteristic that the intake gas from the intake pipe 1 flows dispersedly in all directions, so that the air flow is more uniform. The diameter of the gas homogenizing holes 3 gradually increases in the direction away from the corresponding intake pipe 1. The air flow is large near the intake pipe 1, so the holes are smaller, and the air flow is small at a farther distance, so the holes are larger, thus ensuring the gas homogenizing effect. The density of the gas homogenizing holes 3 gradually increases in the direction away from the intake pipe 1. The air flow pressure is small at a place far from the intake pipe 1. By increasing the density, the problem of small pressure is compensated, so as to achieve air flow balance.

[0026] It further includes a gas diversion mechanism arranged between the gas homogenizing plate 2 and the intake pipe 1. It is convenient for the gas to flow dispersedly, reduces the concentration of air flow pressure, and realizes gas homogenization. The diversion mechanism includes a diversion plate 4 connected to the intake pipe 1, and a main diversion groove 5 communicating with the intake pipe 1 is provided at the lower end of the diversion plate 4, and the main diversion groove 5 is connected with branched sub-diversion grooves 6. The main diversion groove 5 guides the air flow in all directions, and the sub-diversion grooves 6 make the air flow distribution more uniform. The main diversion groove 5 is in a "V" shape or a "丰" shape, and the sub-diversion grooves 6 are in a shape of multiple "回" shapes sleeved together. In this way, the air flow is more uniform. The depth of the sub-diversion grooves 6 is less than the depth of the main diversion groove 5. Ensure smoother flow on the main diversion groove 5.

[0027] [[ID=!2]]The workbench for placing the substrate is provided with air extraction holes 7 arranged at equal intervals around the substrate. Ensure more uniform air extraction, and cooperate with the intake air, the effect is better.

[0028] A deposition device includes the above-mentioned atomic layer deposition gas homogenizing mechanism.

[0029] Working Principle: Three inlet pipes 1 are provided, which are uniformly distributed through a uniform plate 2. The uniform holes 3 on the uniform plate 2 are scattered around the inlet pipe 1, with their diameter gradually increasing away from the center, and the density also increases, thus ensuring uniformity. The main flow groove 5 and sub-flow grooves 6 on the guide plate 4, combined with the uniform holes 3, enhance the uniformity. The exhaust holes 7 allow unreacted gases to be removed promptly and are distributed circumferentially around the substrate, ensuring more uniform and rapid exhaust.

[0030] Although the embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations may be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. An atomic layer deposition gas homogenization mechanism, comprising an air inlet pipe (1) for introducing deposition gas, characterized in that: The lower end of the intake pipe (1) is connected to a gas distribution plate (2) through a closed cavity. The gas distribution plate (2) is provided with gas distribution holes (3), and a plurality of gas distribution holes (3) are arranged in a scattered manner centered on the intake pipe (1).

2. The atomic layer deposition gas homogenizing mechanism according to claim 1, characterized in that: The diameter of the gas distribution hole (3) gradually increases in the direction away from the corresponding intake pipe (1).

3. The atomic layer deposition gas homogenizing mechanism according to claim 2, characterized in that: The density of the gas distribution holes (3) gradually increases in the direction away from the intake pipe (1).

4. The atomic layer deposition gas homogenizing mechanism according to claim 1, characterized in that: A plurality of intake pipes (1) are provided.

5. The atomic layer deposition gas homogenizing mechanism according to claim 1, characterized in that: It further includes a gas diversion mechanism arranged between the gas distribution plate (2) and the intake pipe (1).

6. The atomic layer deposition gas homogenizing mechanism according to claim 5, characterized in that: The diversion mechanism includes a diversion plate (4) connected to the intake pipe (1). The lower end of the diversion plate (4) is provided with a main diversion groove (5) communicated with the intake pipe (1), and the main diversion groove (5) is connected with branched sub-diversion grooves (6).

7. The atomic layer deposition gas homogenizing mechanism according to claim 6, characterized in that: The main diversion groove (5) is in a "V" shape or a "丰" shape, and the sub-diversion grooves (6) are in a plurality of "回" shapes sleeved together.

8. The atomic layer deposition gas homogenizing mechanism according to claim 7, characterized in that: The depth of the sub-diversion groove (6) is less than the depth of the main diversion groove (5).

9. The atomic layer deposition gas homogenizing mechanism according to claim 1, characterized in that: On the workbench for placing the substrate, air extraction holes (7) surrounding the substrate are arranged at equal intervals.

10. A deposition device, characterized in that: It includes the atomic layer deposition gas distribution mechanism according to any one of claims 1 to 9.

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