Silicon carbide wafer grinding bed structure

Abstract

The utility model relates to a silicon carbide wafer grinding bed structure which is characterized by comprising a grinding base, a grinding platform, a vacuum adsorption table and a grinding wheel set. A silicon carbide crystal ingot is adsorbed on a vacuum adsorption table in a vacuum adsorption mode by adopting a grinding bed mode, and during processing of the silicon carbide wafer, surface grinding type processing of the silicon carbide wafer is carried out by utilizing a plurality of stations; compared with a grinding type machining mode, the machining mode has the advantages that the machining efficiency is higher, fewer diamond consumables are adopted, rough cutting and fine cutting are matched for machining precision, the requirement for the surface roughness of the silicon carbide crystal ingot is met, the machining efficiency is greatly improved, few silicon carbide crystal ingot materials are consumed, and the cost is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon carbide wafers, in particular to a silicon carbide wafer grinding bed structure. Background Art

[0002] Silicon carbide (SiC) is a third-generation semiconductor material with excellent physical properties such as a wide bandgap, high thermal conductivity, and high saturated electron mobility. It is often used in high-temperature, high-frequency, radiation-resistant, energy-saving, and communications applications. SiC-based electronic devices have the advantages of small size, low forward resistance, low switching losses, and high response frequency.

[0003] The most common methods for processing silicon carbide ingots into silicon carbide wafers are wire sawing, laser cutting and grinding. The production cost of silicon carbide ingots is high, and when processing them into silicon carbide wafers, the use of wire saws will waste a large amount of silicon carbide material in the cutting position. During laser cutting, refraction occurs, resulting in large surface roughness and low surface accuracy of the ingot. In addition, during the grinding process, due to the high hardness of silicon carbide, large-scale diamond grinding during the grinding process will cause large wear, high consumables, and high cost.

[0004] Therefore, a new processing device is needed to solve the problems of inadequacies of traditional silicon carbide ingot grinding, wire saw processing and laser processing. Utility Model Content

[0005] The technical problem to be solved by the utility model is to provide a silicon carbide wafer grinding bed structure, which can solve the problems of high cost, poor surface accuracy and serious waste of raw materials in general traditional silicon carbide ingot grinding, wire saw processing and laser processing.

[0006] In order to solve the above technical problems, the technical solution of the utility model is: a silicon carbide wafer grinding bed structure, the innovation of which is that it includes a grinding base, a grinding platform, a vacuum adsorption table and a grinding wheel assembly;

[0007] A longitudinal guide rail is provided on the upper surface of the grinding base, and a grinding wheel assembly frame is provided on one end of the longitudinal guide rail perpendicular to the upper surface of the grinding base, and a lifting unit for driving the grinding wheel assembly to rise and fall is provided on the grinding wheel assembly frame;

[0008] The grinding platform includes a longitudinal platform and a transverse platform; a first pneumatic slider cooperating with the longitudinal guide rail is provided at the bottom end of the longitudinal platform, and the first pneumatic slider on the lower surface of the longitudinal platform cooperates with the longitudinal guide rail on the upper surface of the grinding base to form a first pneumatic slider guide rail group, so as to drive the longitudinal platform to move back and forth along the extension direction of the longitudinal guide rail, and a transverse guide rail is provided on the upper surface of the longitudinal platform; a second pneumatic slider cooperating with the transverse guide rail is provided at the bottom end of the transverse platform, and the second pneumatic slider on the lower surface of the transverse platform cooperates with the transverse guide rail on the upper surface of the longitudinal platform to form a second pneumatic slider guide rail group, so as to drive the transverse platform to move back and forth along the extension direction of the transverse guide rail; a fixed seat is provided on the upper surface of the transverse platform;

[0009] The vacuum adsorption platform has a plurality of fixed seats arranged in a straight line on the upper surface of the horizontal platform; the side of the vacuum adsorption platform is provided with a vacuum hole, and the surface of the vacuum adsorption platform is provided with a group of negative pressure adsorption holes connected to the vacuum holes;

[0010] The grinding wheel assembly is mounted on a lifting unit on a grinding wheel assembly frame and moves in a vertical direction following the lifting unit; the grinding wheel assembly includes at least one pair of grinding wheel units, the grinding wheel units including a rough grinding wheel unit and a fine grinding wheel unit, the rough grinding wheel unit and the fine grinding wheel unit forming two grinding stations on the grinding wheel assembly frame;

[0011] Furthermore, the outer contour of the grinding wheel unit is a diamond grinding wheel.

[0012] Furthermore, a grinding shield is provided on the transverse platform, and a numerical control panel is provided on the grinding shield.

[0013] Furthermore, chip removal grooves are provided extending outwards from both ends of the transverse platform.

[0014] Furthermore, the lifting unit is a third pneumatic slider guide group arranged on the grinding wheel group frame, and a grinding wheel unit drive motor is provided on the third pneumatic slider guide group, and the grinding wheel unit is installed at the output end of the grinding wheel unit drive motor; the grinding wheel unit drive motor is driven to rise and fall by the third pneumatic slider guide group to realize the lifting and lowering adjustment of the grinding wheel unit.

[0015] The advantages of the present invention are:

[0016] 1) In the present invention, a silicon carbide ingot is adsorbed on a vacuum adsorption table by using a grinding bed. During the processing of silicon carbide wafers, multiple stations are used to perform surface grinding of the silicon carbide wafers. Compared with grinding, this processing method is more efficient and uses less diamond consumables. The processing accuracy adopts a combination of rough cutting and fine cutting to meet the surface roughness requirements of the silicon carbide ingot, which greatly improves the processing efficiency, reduces the consumables of silicon carbide ingot materials, and reduces costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present invention will be further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0018] Figure 1 The utility model discloses a silicon carbide wafer grinding bed structure.

[0019] Figure 2 This is a diagram of the internal structure of a silicon carbide wafer grinding machine according to the present invention.

[0020] Figure 3 The utility model is a schematic cross-sectional view of a silicon carbide wafer grinding machine.

[0021] Figure 4 The utility model is a schematic diagram of the local structure of a silicon carbide wafer grinding machine. DETAILED DESCRIPTION

[0022] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0023] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are also within the scope of protection of the present invention.

[0024] like Figures 1 to 4 The structure of a silicon carbide wafer grinding bed shown includes a grinding base 1 , a grinding platform 2 , a vacuum adsorption platform 3 and a grinding wheel assembly 4 .

[0025] A longitudinal guide rail 11 is provided on the upper surface of the grinding base 1, and a grinding wheel assembly frame 12 is provided at one end of the longitudinal guide rail 11 perpendicular to the upper surface of the grinding base 1. The grinding wheel assembly frame 12 is provided with a lifting unit 13 for driving the grinding wheel assembly 4 to rise and fall.

[0026] The grinding platform 2 includes a longitudinal platform 21 and a transverse platform 22; a first pneumatic slider 211 cooperating with the longitudinal guide rail 11 is provided at the bottom end of the longitudinal platform 21, and the first pneumatic slider 211 on the lower surface of the longitudinal platform 21 cooperates with the longitudinal guide rail 11 on the upper surface of the grinding base 1 to form a first pneumatic slider guide rail group, so as to drive the longitudinal platform 21 to move back and forth along the extension direction of the longitudinal guide rail 11, and a transverse guide rail 212 is provided on the upper surface of the longitudinal platform 21; a second pneumatic slider 221 cooperating with the transverse guide rail 212 is provided at the bottom end of the transverse platform 22, and the second pneumatic slider 221 on the lower surface of the transverse platform 22 cooperates with the transverse guide rail 212 on the upper surface of the longitudinal platform 21 to form a second pneumatic slider guide rail group, so as to drive the transverse platform 22 to move back and forth along the extension direction of the transverse guide rail 212; a fixed seat 23 is provided on the upper surface of the transverse platform 22.

[0027] The vacuum adsorption platform 3 has a plurality of fixed seats 23 arranged in a straight line on the upper surface of the horizontal platform 22; the side of the vacuum adsorption platform 3 is provided with vacuum holes, and the surface of the vacuum adsorption platform 3 is provided with a group of negative pressure adsorption holes connected to the vacuum holes.

[0028] The grinding wheel set 4 is mounted on the lifting unit 13 on the grinding wheel set frame 12 and moves in the vertical direction following the lifting unit 13; the grinding wheel set 4 includes at least one pair of grinding wheel units, the grinding wheel units include a rough grinding wheel unit 41 and a fine grinding wheel unit 42, and the rough grinding wheel unit 41 and the fine grinding wheel unit 42 form two grinding stations on the grinding wheel set frame 12.

[0029] The outer contour of the grinding wheel unit is a diamond grinding wheel.

[0030] A grinding shield is provided on the transverse platform 22 , and a numerical control panel is provided on the grinding shield.

[0031] Chip removal grooves 24 are provided at both ends of the transverse platform 22 and extend outward.

[0032] The lifting unit 13 is a third pneumatic slider guide group arranged on the grinding wheel assembly frame. A grinding wheel unit drive motor 131 is provided on the third pneumatic slider guide group, and the grinding wheel unit is installed at the output end of the grinding wheel unit drive motor 131; the grinding wheel unit drive motor 131 is driven to rise and fall by the third pneumatic slider guide group to realize the lifting and lowering adjustment of the grinding wheel unit.

[0033] The working principle of the utility model is: a silicon carbide ingot is adsorbed on a vacuum adsorption table by means of a grinding bed, and during the processing of the silicon carbide wafer, a plurality of stations are used to perform surface grinding processing on the silicon carbide wafer; this processing method is more efficient than grinding processing, and uses less diamond consumables, and the processing accuracy adopts a combination of rough cutting and fine cutting to meet the surface roughness requirements of the silicon carbide ingot, which greatly improves the processing efficiency, reduces the consumables of the silicon carbide ingot material, and reduces the cost.

[0034] Those skilled in the art should understand that the present invention is not limited by the above-mentioned embodiments. The above-mentioned embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, and these changes and improvements shall fall within the scope of the present invention to be protected.

Claims

1. A silicon carbide wafer grinding bed structure, characterized in that: It includes a grinding base, a grinding platform, a vacuum adsorption table and a grinding wheel set; A longitudinal guide rail is provided on the upper surface of the grinding base, and a grinding wheel assembly frame is provided on one end of the longitudinal guide rail perpendicular to the upper surface of the grinding base, and a lifting unit for driving the grinding wheel assembly to rise and fall is provided on the grinding wheel assembly frame; The grinding platform includes a longitudinal platform and a transverse platform; a first pneumatic slider cooperating with the longitudinal guide rail is provided at the bottom end of the longitudinal platform, and the first pneumatic slider on the lower surface of the longitudinal platform cooperates with the longitudinal guide rail on the upper surface of the grinding base to form a first pneumatic slider guide rail group, so as to drive the longitudinal platform to move back and forth along the extension direction of the longitudinal guide rail, and a transverse guide rail is provided on the upper surface of the longitudinal platform; a second pneumatic slider cooperating with the transverse guide rail is provided at the bottom end of the transverse platform, and the second pneumatic slider on the lower surface of the transverse platform cooperates with the transverse guide rail on the upper surface of the longitudinal platform to form a second pneumatic slider guide rail group, so as to drive the transverse platform to move back and forth along the extension direction of the transverse guide rail; a fixed seat is provided on the upper surface of the transverse platform; The vacuum adsorption platform has a plurality of fixed seats arranged in a straight line on the upper surface of the horizontal platform; the side of the vacuum adsorption platform is provided with a vacuum hole, and the surface of the vacuum adsorption platform is provided with a group of negative pressure adsorption holes connected to the vacuum holes; The grinding wheel assembly is mounted on a lifting unit on a grinding wheel assembly frame and moves in a vertical direction following the lifting unit; the grinding wheel assembly includes at least one pair of grinding wheel units, and the grinding wheel units include a rough grinding wheel unit and a fine grinding wheel unit, and the rough grinding wheel unit and the fine grinding wheel unit form two grinding stations on the grinding wheel assembly frame.

2. The silicon carbide wafer grinding machine structure according to claim 1, wherein: The outer contour of the grinding wheel unit is a diamond grinding wheel.

3. The silicon carbide wafer grinding machine structure according to claim 1, characterized in that: A grinding shield is provided on the transverse platform, and a numerical control panel is provided on the grinding shield.

4. The silicon carbide wafer grinding machine structure according to claim 1, wherein: Chip removal grooves are provided at both ends of the transverse platform extending outward.

5. The silicon carbide wafer grinding machine structure according to claim 1, characterized in that: The lifting unit is a third pneumatic slider guide rail group arranged on the grinding wheel group frame, and a grinding wheel unit drive motor is provided on the third pneumatic slider guide rail group. The grinding wheel unit is installed at the output end of the grinding wheel unit drive motor; the grinding wheel unit drive motor is driven to rise and fall by the third pneumatic slider guide rail group to realize the lifting and lowering adjustment of the grinding wheel unit.

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