Reactant temperature control device and chemical vapor deposition equipment

Abstract

The utility model discloses a reactant temperature control device and chemical vapor deposition equipment, and relates to the technical field of semiconductor preparation, the reactant temperature control device comprises a storage tank and a heating assembly arranged on the storage tank, and the storage tank is further provided with a temperature sensor and a temperature control switch. The temperature sensor and the heating assembly are further connected with the temperature controller, the storage tank has a first state within a first preset temperature range and a second state within a second preset temperature range, and the first preset temperature range is within the second preset temperature range. The temperature controller controls the heating assembly to heat so that the storage tank can be converted into the first state from the second state and kept in the first state, and the temperature controller is further connected with the temperature control switch so as to trigger an alarm signal after the storage tank is converted into the second state from the first state. According to the reactant temperature control device and the chemical vapor deposition equipment provided by the invention, the stability of the reactant temperature control device can be improved, so that the uniformity of the thickness of a thin film is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor preparation, in particular to a reactant temperature control device and a chemical vapor deposition equipment. BACKGROUND

[0002] Chemical vapor deposition (CVD) equipment is an important tool for depositing thin film materials on the surface of a substrate. CVD technology is widely used in the fields of semiconductor manufacturing, optical coating, material science, etc. The CVD equipment introduces reactants into a reaction chamber and, under certain temperature and pressure conditions, causes gas molecules to chemically react on the surface of the substrate, thereby forming the desired thin film material. Specifically, chemical vapor deposition includes a reaction chamber, a gas supply system, an exhaust system, a temperature control system, and a vacuum system. The reaction chamber is provided with a substrate table for placing the substrate. The gas supply system supplies reactants in gaseous form into the reaction chamber. The reactants are deposited on the surface of the substrate in the reaction chamber to form a thin film. Excess gas and by-products are discharged by the exhaust system.

[0003] The gas supply system includes a storage tank, a gas delivery pipeline, a flow controller, and a temperature controller. The storage tank is provided with a heating assembly for heating the objects in the storage tank and entering the reaction chamber in the form of gas carried by the carrier gas. The temperature controller is connected with the temperature controller and the heating assembly respectively, so as to keep the temperature of the storage tank within a preset temperature range. When the temperature of the storage tank exceeds the preset range, the temperature controller alarms. In actual application, after replacing the storage tank, the temperature of the storage tank is normal temperature. At this time, the operator needs to manually set the lower limit of the preset range of temperature to normal temperature 25 degrees, otherwise the temperature controller is in an alarm state and cannot control the heating assembly to heat. However, there is a case that the operator forgets to set the lower limit back to the original value, so that the objects in the storage tank enter the reaction chamber at a lower temperature. In this way, the reactants carried by the carrier gas are less, so that the thin film deposited on the substrate is thinner. CONTENT OF THE UTILITY MODEL

[0004] The purpose of the present application is to provide a reactant temperature control device and a chemical vapor deposition equipment, which can improve the stability of the reactant temperature control device and improve the uniformity of the thin film thickness.

[0005] On the one hand, an embodiment of the present application provides a reactant temperature control device, including a storage tank and a heating component arranged on the storage tank. The storage tank is also provided with a temperature sensor and a temperature control switch. The temperature sensor and the heating component are also connected to a temperature controller respectively. The storage tank has a first state within a first preset temperature range and a second state within a second preset temperature range. The first preset temperature range is within the second preset temperature range. The temperature controller controls the heating component to heat so that the storage tank is converted from the second state to the first state and remains in the first state. The temperature controller is also connected to the temperature control switch to trigger an alarm signal after the storage tank is converted from the first state to the second state.

[0006] As an practicable manner, the reactant temperature control device further includes an alarm component, which alarms when the temperature control switch triggers an alarm signal, or when the temperature of the storage tank exceeds a first preset temperature range.

[0007] As an practicable manner, the storage tank is a liquid storage tank, wherein the liquid is a titanium source.

[0008] As an practicable embodiment, the titanium source is tetrakisdimethylaminotitanium.

[0009] As an implementable manner, the first preset temperature range is 48-52°C.

[0010] As an implementable manner, the temperature control switch is a normally open temperature control switch.

[0011] As an implementable manner, the temperature sensor is a thermocouple.

[0012] As an implementable manner, the alarm component is a sound alarm or a light alarm.

[0013] On the other hand, an embodiment of the present application provides a chemical vapor deposition device, comprising at least two of the above-mentioned reactant temperature control devices, and a reaction chamber, wherein the storage tanks of the at least two reactant temperature control devices are respectively connected to the reaction chamber so that at least two reactants are deposited in the reaction chamber to form a thin film.

[0014] The beneficial effects of the embodiments of the present application include:

[0015] The reactant temperature control device provided in the present application includes a storage tank and a heating component arranged on the storage tank. The storage tank is also provided with a temperature sensor and a temperature control switch. The temperature sensor and the heating component are also connected to a temperature controller respectively. The storage tank has a first state within a first preset temperature range and a second state within a second preset temperature range. The first preset temperature range is within the second preset temperature range. Specifically, the temperature controller controls the heating component to heat the storage tank according to the temperature value detected by the temperature sensor, wherein the temperature of the storage tank has a first state for outputting items. In the first state, the temperature of the items in the storage tank is within the first preset temperature range; when the storage tank is replaced, the temperature of the storage tank needs to be gradually increased from room temperature to the first preset temperature range, so that the storage tank has a second state of increased temperature. After replacing the storage tank, the temperature controller controls the heating component to heat the storage tank so that the storage tank is converted from the second state to the first state and maintained in the first state. The temperature controller is also connected to the temperature control switch to trigger an alarm signal after the storage tank is converted from the first state to the second state. The operator adjusts the lower limit value of the temperature controller according to the alarm signal to control the heating component so that the storage tank is maintained in the first state. The triggering of the alarm signal has a certain reminder effect on the operator, thereby avoiding the situation where the operator forgets to adjust the lower limit, thereby improving the stability of the reactant temperature control device and thus improving the uniformity of the film thickness. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0017] Figure 1 This is one of the structural schematic diagrams of the reaction gas temperature control device according to an embodiment of the present application;

[0018] Figure 2 This is the second structural diagram of the reaction gas temperature control device according to an embodiment of the present application.

[0019] Icons: 100-Reactant temperature control device; 110-Storage tank; 120-Heating component; 130-Temperature sensor; 140-Temperature control switch; 150-Temperature controller; 160-Alarm component; 170-Machine controller. DETAILED DESCRIPTION

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Generally, the components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0021] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for protection, but merely represents selected embodiments of the present application. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments in the present application without creative work are within the scope of protection of the present application.

[0022] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0023] Chemical vapor deposition equipment is a device that deposits at least two reactants in the form of ions on a substrate to form a thin film. In order to allow the carrier gas to carry the reactants into the reaction chamber more evenly, the reactants usually have a temperature higher than room temperature. That is, during the deposition process, the reactants need to be heated to a preset temperature.

[0024] The embodiment of the present application provides a reactant temperature control device 100, such as Figure 1 As shown, it includes a storage tank 110 and a heating component 120 arranged on the storage tank 110. The storage tank 110 is also provided with a temperature sensor 130 and a temperature control switch 140. The temperature sensor 130 and the heating component 120 are also connected to a temperature controller 150 respectively. The storage tank 110 has a first state within a first preset temperature range and a second state within a second preset temperature range. The first preset temperature range is within the second preset temperature range. The temperature controller 150 controls the heating component 120 to heat so that the storage tank 110 is converted from the second state to the first state and maintained in the first state. The temperature controller 150 is also connected to the temperature control switch 140 to trigger an alarm signal after the storage tank 110 is converted from the first state to the second state.

[0025] The reactant temperature control device 100 provided by the embodiment of the present application is applied to a chemical vapor deposition device and is used for controlling the temperature of a reactant. Specifically, the reactant temperature control device 100 comprises a storage tank 110 and a heating assembly 120 arranged on the storage tank 110. The heating assembly 120 is used for heating the storage tank 110 to heat the reactant in the storage tank 110. A temperature sensor 130 is further arranged on the storage tank 110. The temperature sensor 130 and the heating assembly 120 are further connected to a temperature controller 150 respectively. The temperature sensor 130 measures the temperature of the reactant. The temperature controller 150 is connected to the temperature sensor 130 to obtain the temperature of the reactant and controls the working state of the heating assembly 120 according to the temperature value of the reactant.

[0026] Specifically, when the storage tank 110 is in normal working state, the temperature of the reactant in the storage tank 110 is maintained in a first preset temperature range under the action of the heating assembly 120 and the temperature controller 150. At this time, the storage tank 110 is in working state, which is a first state. The temperature controller 150 is set to the first preset temperature range.

[0027] When the reactant in the storage tank 110 is consumed, a new storage tank 110 needs to be replaced. Thus, the temperature of the storage tank 110 is normal temperature. The heating assembly 120 needs to be controlled to heat the storage tank 110 to rise the temperature of the storage tank 110 to the first preset temperature range. At this time, the storage tank 110 is in temperature rising state, which is a second state. The temperature controller 150 is set to a second preset temperature range.

[0028] After the temperature rising of the storage tank 110 is completed, the storage tank 110 is converted from the second state to the first state and is maintained in the first state. At this time, an operator needs to adjust the setting range of the temperature controller 150 back to the first preset temperature range to maintain the storage tank 110 in the first state. When the operator forgets to adjust the preset temperature range, the temperature controller 150 of the embodiment of the present application is further connected to a temperature control switch 140 to trigger an alarm signal when the storage tank 110 is converted from the first state to the second state. That is, when the temperature of the storage tank 110 drops to the outside of the first preset temperature range and is located in the second preset temperature range, the temperature control switch 140 triggers an alarm signal according to the temperature of the reactant. The alarm signal reminds the operator to adjust the temperature range of the temperature controller 150 to the first preset temperature, so that the storage tank 110 is located in the second state except for the temperature rising state. Triggering the alarm signal has a certain reminding effect on the operator, so that the situation that the operator forgets to adjust the lower limit is avoided, thereby improving the stability of the reactant temperature control device 100 and the uniformity of the film thickness.

[0029] It can be understood that the chemical vapor deposition device usually comprises a machine controller 170, such as a computer. Figure 1As shown, the machine controller 170 controls the operation of the entire chemical vapor deposition equipment. In order to achieve normal operation of the chemical vapor deposition equipment, the temperature controller 150 is connected to the machine controller 170 by signal, and the machine controller 170 is connected to the heating component 120, that is, the temperature controller 150 controls the operation of the heating component 120 through the machine controller 170, as shown in FIG. Figure 1 shown.

[0030] The reactant temperature control device 100 provided in the present application includes a storage tank 110 and a heating component 120 arranged on the storage tank 110. The storage tank 110 is also provided with a temperature sensor 130 and a temperature control switch 140. The temperature sensor 130 and the heating component 120 are also connected to a temperature controller 150 respectively. The storage tank 110 has a first state within a first preset temperature range and a second state within a second preset temperature range. The first preset temperature range is within the second preset temperature range. Specifically, the temperature controller 150 controls the heating component 120 to heat the storage tank 110 according to the temperature value detected by the temperature sensor 130, wherein the temperature of the storage tank 110 has a first state for outputting items. In the first state, the temperature of the items in the storage tank 110 is within the first preset temperature range; when the storage tank 110 is replaced, the temperature of the storage tank 110 needs to be gradually increased from room temperature to the first preset temperature range, so that the storage tank 110 has a second state of increased temperature. After replacing the storage tank 110, the temperature controller 150 controls the heating component 120 to heat the storage tank 110 so that the storage tank 110 is converted from the second state to the first state and maintained in the first state. The temperature controller 150 is also connected to the temperature control switch 140 to trigger an alarm signal when the storage tank 110 fails to convert to the first state. The operator adjusts the lower limit value of the temperature controller 150 according to the alarm signal to control the heating component 120 so that the storage tank 110 is maintained in the first state. The triggering of the alarm signal has a certain reminder effect on the operator, thereby avoiding the situation where the operator forgets to adjust the lower limit, thereby improving the stability of the reactant temperature control device 100, thereby improving the uniformity of the film thickness.

[0031] Optional, such as Figure 2 As shown, the reactant temperature control device 100 further includes an alarm component 160 , which alarms when the temperature control switch 140 triggers an alarm signal, or when the temperature of the storage tank 110 exceeds a first preset temperature range.

[0032] The alarm component 160 can timely convert the alarm signal into a signal that is more easily received, thereby playing a warning role, so that the operator can adjust the preset temperature of the temperature controller 150 even if the alarm signal is obtained.

[0033] Specifically, the specific structure and form of the alarm component 160 are not limited in the present embodiment. For example, it can be an audible alarm or a light alarm. The audible alarm emits a sound to allow the operator to receive the alarm signal as quickly as possible. Similarly, the light alarm emits a light to allow the operator to receive the alarm signal as quickly as possible. The specific structure and alarm form can be specifically configured by those skilled in the art according to the actual working environment.

[0034] In addition, it should be noted that the above-mentioned sound alarm or light alarm is only a specific embodiment of the present application and is not a limitation of the present application. Those skilled in the art can also set other alarm signals such as screen display, information prompts, etc.

[0035] In one possible implementation of the embodiment of the present application, the storage tank 110 is a liquid storage tank 110 , wherein the liquid is a titanium source.

[0036] In the preparation of semiconductor devices, chemical vapor deposition equipment is usually required to deposit various hierarchical structures on the device. For example, when it is necessary to deposit insulating layers such as titanium dioxide and titanium nitride, the required reactants include a titanium source. At this time, the storage tank 110 can be set as a liquid storage tank 110, and a titanium source is set inside the liquid storage tank 110.

[0037] Of course, in practical applications, chemical vapor deposition can deposit more thin films, and those skilled in the art can set the type and form of reactants according to actual conditions.

[0038] When the liquid is a titanium source, the titanium source is tetrakisdimethylaminotitanium.

[0039] Tetrakisdimethylaminotitanium has the advantages of low toxicity, low cost, high vapor pressure, and easy storage. Setting tetrakisdimethylaminotitanium as a titanium source can reduce costs and improve production safety.

[0040] In one achievable manner of the embodiment of the present application, the first preset temperature range is 48-52°C.

[0041] When the titanium source is tetrakis(dimethylamino)titanium, the first preset temperature range is set between 48° C. and 52° C., so that the titanium source can be uniformly deposited on the substrate.

[0042] Optionally, the temperature control switch 140 is a normally open temperature control switch 140 .

[0043] Normally open temperature-controlled switch 140 is a temperature-sensitive electrical switch that is typically off until the set temperature is reached. When the temperature reaches or exceeds a preset value, the switch closes, triggering the corresponding circuit action. This type of switch is widely used in various applications requiring temperature control. In the present embodiment, when the temperature falls below the lower limit of a first preset temperature range, the switch opens, causing temperature controller 150 to lose control of heating assembly 120 and trigger an alarm.

[0044] In one possible implementation of the embodiment of the present application, the temperature sensor 130 is a thermocouple.

[0045] Thermocouples are a common temperature measurement instrument that measures temperature by measuring the thermoelectromotive force between two dissimilar metal conductors. Due to their simplicity, reliability, and cost-effectiveness, thermocouples are widely used in industry, scientific research, and everyday life.

[0046] Optionally, the alarm component 160 is a sound alarm or a light alarm.

[0047] The present application also discloses a chemical vapor deposition apparatus, comprising at least two of the above-mentioned reactant temperature control devices 100, and a reaction chamber, wherein the storage tanks 110 of the at least two reactant temperature control devices 100 are respectively connected to the reaction chamber so that at least two reactants are deposited in the reaction chamber to form a thin film. The chemical vapor deposition apparatus includes the same structure and beneficial effects as the reactant temperature control device 100 in the aforementioned embodiment. The structure and beneficial effects of the reactant temperature control device 100 have been described in detail in the aforementioned embodiment and will not be repeated here.

[0048] The above description is merely a preferred embodiment of the present application and is not intended to limit the present application. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A reactant temperature control device, characterized in that: It includes a storage tank and a heating component arranged on the storage tank. The storage tank is also provided with a temperature sensor and a temperature control switch. The temperature sensor and the heating component are also connected to a temperature controller respectively. The storage tank has a first state within a first preset temperature range and a second state within a second preset temperature range. The first preset temperature range is within the second preset temperature range. The temperature controller controls the heating component to heat the storage tank so that the storage tank is converted from the second state to the first state and remains in the first state. The temperature controller is also connected to the temperature control switch to trigger an alarm signal after the storage tank is converted from the first state to the second state.

2. The reactant temperature control device according to claim 1, characterized in that: It also includes an alarm component, which alarms when the temperature control switch triggers an alarm signal, or alarms when the temperature of the storage tank exceeds a first preset temperature range.

3. The reactant temperature control device according to claim 1, characterized in that: The storage tank is a liquid storage tank, wherein the liquid is a titanium source.

4. The reactant temperature control device according to claim 3, characterized in that: The titanium source is tetrakis dimethylamino titanium.

5. The reactant temperature control device according to claim 4, characterized in that: The first preset temperature range is 48-52°C.

6. The reactant temperature control device according to claim 1, characterized in that: The temperature control switch is a normally open temperature control switch.

7. The reactant temperature control device according to claim 1, characterized in that: The temperature sensor is a thermocouple.

8. The reactant temperature control device according to claim 2, characterized in that: The alarm component is a sound alarm component or a light alarm component.

9. A chemical vapor deposition device, characterized in that: The method comprises at least two reactant temperature control devices according to any one of claims 1 to 8, and a reaction chamber, wherein the gas tanks of at least two reactant temperature control devices are respectively connected to the reaction chamber, so that at least two reactants are deposited in the reaction chamber to form a thin film.

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