Photoelectric packaging structure

By arranging the non-flat side and light-guiding portion in the optoelectronic packaging structure, the problems of excessive light output angle and insufficient structural strength in the prior art are solved, and light concentration and structural strength are improved.

CN223428832UActive Publication Date: 2025-10-10LITE ON TECH CORP
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Patent Information

Application Number
CN202421697379.1
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Priority Date
2023-10-25
Filing Date
2024-07-17
Publication Date
2025-10-10
Estimated Expiration
2034-07-17

AI Technical Summary

Technical Problem

The existing chip-level packaging structure results in a large light output angle, scattered light, and inability to focus the light, and the structural strength is insufficient.

Method used

The optoelectronic packaging structure design includes an optoelectronic component, a first light-transmitting layer, a second light-transmitting layer and a frame. An uneven side portion is provided on the outer peripheral side of the first light-transmitting layer, and the frame surrounds and connects the side of the optoelectronic component and the second light-transmitting layer. Part of the frame fills the uneven side portion to form a light-guiding portion to concentrate light and enhance structural strength.

Benefits of technology

The light output angle is reduced, the light is concentrated, the light output efficiency of the optoelectronic packaging structure is improved, and the strength of the overall structure is enhanced.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a photoelectric packaging structure. The photoelectric packaging structure comprises a photoelectric assembly, a first light-transmitting layer, a second light-transmitting layer and a frame body. The first light transmitting layer is arranged above the photoelectric component. The first light-transmitting layer has a first surface and a second surface opposite to each other, and a peripheral side surface connecting the first surface and the second surface. The first surface faces the optoelectronic component. The second light-transmitting layer is located between the photoelectric component and the first light-transmitting layer. At least the peripheral side face of the first light-transmitting layer, the side face of the second light-transmitting layer and the side face of the photoelectric assembly jointly define a containing space. The frame body fills the accommodating space and at least surrounds and is connected with the side surface of the photoelectric assembly and the side surface of the second light-transmitting layer. Therefore, the photoelectric packaging structure provided by the utility model can improve the luminous efficiency of the photoelectric packaging structure and improve the structural strength.
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Description

Technical Field

[0001] The utility model relates to a photoelectric packaging structure, in particular to a photoelectric packaging structure capable of improving light extraction efficiency and structural strength. Background Art

[0002] The existing chip scale package (CSP) structure consists of a layer of light-transmitting components covering the LED chip. This allows the CSP LED to emit light on all surfaces (i.e., the top surface and four sides). As a result, the light output angle is too large, and the light cannot be concentrated and is too dispersed.

[0003] Therefore, how to overcome the above-mentioned defects through improvement of structural design has become one of the important issues to be solved in this field. Utility Model Content

[0004] The technical problem to be solved by the present invention is to provide a photoelectric packaging structure that can improve light extraction efficiency and structural strength in response to the deficiencies of the prior art.

[0005] In order to solve the above-mentioned technical problems, one of the technical solutions adopted by the present invention is to provide a photoelectric packaging structure, which includes a photoelectric component, a first light-transmitting layer, a second light-transmitting layer and a frame. The photoelectric component has a surface and a side surface connected to each other. The first light-transmitting layer is arranged above the photoelectric component, and the first light-transmitting layer has a first surface and a second surface opposite to each other, and a peripheral side surface connecting the first surface and the second surface. The first surface faces the surface of the photoelectric component. The peripheral side surface has a non-flat side portion. The non-flat side portion is located between the first surface and the second surface, and is located outside the area where the photoelectric component is vertically projected onto the first light-transmitting layer. The second light-transmitting layer is arranged between the photoelectric component and the first light-transmitting layer. The frame at least surrounds and connects the photoelectric component and the side surface of the second light-transmitting layer. Part of the frame also fills the non-flat side portion.

[0006] Optionally, the outer portion of the second light-transmitting layer extends to a portion of the side surface of the optoelectronic component to form a light-guiding portion covering a portion of the side surface of the optoelectronic component.

[0007] Optionally, the first surface of the first light-transmitting layer has a roughened structure.

[0008] Optionally, the roughness of the roughened structure is greater than 1.3 μm.

[0009] Optionally, the first surface of the first light-transmitting layer is parallel to the second surface. The area of ​​the first surface is greater than or equal to the area of ​​the surface of the photovoltaic component and smaller than the area of ​​the second surface. The uneven side portion of the outer peripheral surface is connected to the first surface to form a concave structure.

[0010] Optionally, the outer peripheral side surface of the first light-transmitting layer further includes a flat side portion, which is a side plane perpendicular to the second surface of the first light-transmitting layer. The non-flat side portion, the side surface of the second light-transmitting layer, and a portion of the side surface of the optoelectronic component together define an accommodation space for accommodating the frame.

[0011] Optionally, the uneven side portion is a stepped structure, a concave-convex structure, or a curved concave structure connected to the first surface of the first light-transmitting layer.

[0012] Optionally, the surface profile of the non-flat side portion is an inclined surface, a right-angle surface, an arc, a V-shape, a wave shape, a rectangle or a free-form surface.

[0013] Optionally, the first light-transmitting layer has a preset thickness, and the maximum vertical distance of the non-planar side portion is 50% to 90% of the preset thickness.

[0014] Optionally, an angle between the outer surface of the light guide portion and the first surface of the first light-transmitting layer is at least greater than 20 degrees.

[0015] Optionally, an included angle between the outer surface of the light guide portion and the first surface of the first light-transmitting layer is 30 to 60 degrees.

[0016] Optionally, the first light-transmitting layer is a transparent layer, a light conversion layer doped with phosphor material, a filter layer, or a light adjustment layer having scattering particles.

[0017] Optionally, the light-emitting outer surface of the optoelectronic packaging structure is formed by the second surface of the first light-transmitting layer, and the outer side surface of the frame is aligned with the edge of the second surface.

[0018] Optionally, the optoelectronic packaging structure further includes an optical component disposed above the second surface of the first light-transmitting layer.

[0019] Optionally, the optoelectronic component is a light-emitting component, and the wavelength of the light emitted by the optoelectronic component is between 200 nm and 1100 nm.

[0020] Optionally, the optoelectronic component is a light-emitting component, and the wavelength of the light emitted by the optoelectronic component is between 480 nm and 570 nm.

[0021] Optionally, the optoelectronic component is a light receiving component, and the wavelength of the light received by the optoelectronic component is between 200 nm and 1500 nm.

[0022] Optionally, the topmost surface of the frame is flush with the second surface of the first light-transmitting layer.

[0023] Optionally, the frame is a light reflecting layer or a light absorbing layer.

[0024] Optionally, the optoelectronic packaging structure further includes a light shielding layer, which surrounds and is connected to the frame, and the top surface of the light shielding layer is flush with the second surface of the first light-transmitting layer.

[0025] In order to solve the above-mentioned technical problems, another technical solution adopted by the present invention is to provide a photoelectric packaging structure, which includes a photoelectric component, a first light-transmitting layer, a second light-transmitting layer and a frame. The photoelectric component has a surface and a side surface connected to each other. The first light-transmitting layer is arranged above the photoelectric component. The first light-transmitting layer has a first surface and a second surface opposite to each other, and a peripheral side surface connecting the first surface and the second surface. The first surface faces the surface of the photoelectric component. The second light-transmitting layer is located between the photoelectric component and the first light-transmitting layer. The peripheral side surface of the first light-transmitting layer, the side surface of the second light-transmitting layer and the side surface of the photoelectric component jointly define a accommodating space. The frame fills the accommodating space and at least surrounds and connects the side surface of the photoelectric component and the side surface of the second light-transmitting layer.

[0026] Optionally, the frame is a light reflecting layer or a light absorbing layer.

[0027] Optionally, the optoelectronic packaging structure further includes a light shielding layer surrounding the frame, the light shielding layer surrounds and is connected to the frame, and the top surface of the light shielding layer is flush with the second surface of the first light-transmitting layer.

[0028] Optionally, the second light-transmitting layer is made of a silicon base material.

[0029] Optionally, the second light-transmitting layer further includes first wavelength conversion particles.

[0030] Optionally, the first wavelength conversion particles are blue wavelength conversion particles.

[0031] Optionally, the first wavelength conversion particles are red wavelength conversion particles.

[0032] Optionally, the optoelectronic component is a visible light photodiode.

[0033] Optionally, the first light-transmitting layer is composed of a silicon base material.

[0034] Optionally, the first light-transmitting layer is made of sapphire material.

[0035] Optionally, the frame further includes second wavelength conversion particles, and the weight percentage concentration of the second wavelength conversion particles in the frame is higher than the weight percentage concentration of the first wavelength conversion particles in the second light-transmitting layer.

[0036] Optionally, the optoelectronic component is an ultraviolet light emitting diode component.

[0037] Optionally, the optoelectronic packaging structure further includes a filter layer, and the filter layer covers the first surface and / or the second surface of the first light-transmitting layer.

[0038] Optionally, the outer peripheral side surface of the first light-transmitting layer has a non-flat side portion, and the non-flat side portion is located between the first surface and the second surface and outside the region where the optoelectronic component is vertically projected onto the first light-transmitting layer.

[0039] Optionally, the second light-transmitting layer covers a portion of the surface of the optoelectronic component, and the area of ​​the second light-transmitting layer accounts for 70% to 95% of the surface area of ​​the optoelectronic component.

[0040] Optionally, the frame is located in the accommodating space and extends to fill the uneven side portion of the first light-transmitting layer.

[0041] Optionally, the frame fills the accommodating space and covers another portion of the surface of the optoelectronic component.

[0042] The beneficial effect of the present invention is that the optoelectronic packaging structure provided by the present invention can be configured through the structure of the optoelectronic component, the first light-transmitting layer, the second light-transmitting layer, and the frame. In one embodiment, the outer peripheral side of the first light-transmitting layer has a non-flat side portion, and the frame at least surrounds and connects the side of the optoelectronic component and the second light-transmitting layer, and part of the frame also fills the non-flat side portion; in another embodiment, the outer peripheral side of the first light-transmitting layer, the side of the second light-transmitting layer, and the side of the optoelectronic component can also jointly define a accommodating space, and the frame fills the accommodating space and at least surrounds and connects the side of the optoelectronic component and the side of the second light-transmitting layer. In this way, the optoelectronic packaging structure of the present invention can reduce the light output angle and concentrate the light, thereby improving the light output efficiency of the optoelectronic packaging structure and further strengthening the overall structural strength.

[0043] To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings are only for reference and illustration and are not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 It is a cross-sectional schematic diagram of the optoelectronic packaging structure of the first embodiment of the present invention.

[0045] Figure 2 This is a schematic diagram of the production of the optoelectronic packaging structure of the present invention.

[0046] Figure 3 It is a three-dimensional schematic diagram of the optoelectronic packaging structure of the present invention.

[0047] Figure 4 It is a cross-sectional schematic diagram of the optoelectronic packaging structure of the second embodiment of the present invention.

[0048] Figure 5 It is a cross-sectional schematic diagram of the optoelectronic packaging structure of the third embodiment of the present invention.

[0049] Figure 6 It is a cross-sectional schematic diagram of the optoelectronic packaging structure of the fourth embodiment of the present invention.

[0050] Figure 7The cross section schematic view of the photoelectric packaging structure of the fifth embodiment of the present utility model.

[0051] Figure 8 The cross section schematic view of the photoelectric packaging structure of the sixth embodiment of the present utility model.

[0052] Figure 9 The cross section schematic view of the photoelectric packaging structure of the seventh embodiment of the present utility model.

[0053] Figure 10 The cross section schematic view of the photoelectric packaging structure of the eighth embodiment of the present utility model.

[0054] Figure 11 The cross section schematic view of the photoelectric packaging structure of the ninth embodiment of the present utility model.

[0055] Figure 12 The cross section schematic view of the photoelectric packaging structure of the tenth embodiment of the present utility model.

[0056] Figure 13 The cross section schematic view of the photoelectric packaging structure of the eleventh embodiment of the present utility model.

[0057] Figure 14 The cross section schematic view of the photoelectric packaging structure of the twelfth embodiment of the present utility model. DETAILED DESCRIPTION

[0058] The following is to illustrate the embodiments of the photoelectric packaging structure disclosed by the present utility model through specific embodiments, and the advantages and effects of the present utility model can be understood by the content disclosed in the present specification. The present utility model can be implemented or applied through other different embodiments, and each detail in the present specification can be modified and changed based on different viewpoints and applications without departing from the concept of the present utility model. In addition, the drawings of the present utility model are only simple schematic illustrations, and are not the depiction of actual size, which is declared in advance. The following embodiments will further illustrate the related technical content of the present utility model, but the disclosed content is not used to limit the protection scope of the present utility model.

[0059] It should be understood that although the terms such as "first", "second", "third" and the like can be used herein to describe various elements, these elements should not be limited by these terms. These terms are mainly used to distinguish one element from another element. In addition, the term "or" used herein can include any one or a combination of multiple associated listed items as the case may be.

[0060] First embodiment

[0061] Reference is made to Figure 1As shown, the first embodiment of the present invention provides an optoelectronic packaging structure M, which includes a first light-transmitting layer 1, a second light-transmitting layer 2, a frame 3, and an optoelectronic component 4. The optoelectronic component 4 has a surface 41 and a side surface 42 connected to each other. The optoelectronic component 4 also has two electrode pads 4P disposed on the other surface of the optoelectronic component 4, and the other surface and the surface 41 are located on opposite sides of the optoelectronic component 4. The first light-transmitting layer 1 is disposed above the optoelectronic component 4, and the second light-transmitting layer 2 is disposed between the optoelectronic component 4 and the first light-transmitting layer 1. In this embodiment, the second light-transmitting layer 2 completely covers the surface 41 of the optoelectronic component 4 and partially covers the side surface 42, but this is not limited to this.

[0062] In the first embodiment, the first light-transmitting layer 1 has a first surface 11 and a second surface 12 opposite to each other, and a peripheral side surface 13 connecting the first surface 11 and the second surface 12. The first surface 11 faces the surface 41 of the photovoltaic device 4, and at least a portion of the peripheral side surface 13 forms a non-flat side portion 131. Further, the peripheral side surface 13 includes a non-flat side portion 131 and a flat side portion 132 connected to the non-flat side portion 131 and perpendicular to the first surface 11 and the second surface 12. For example, Figure 1 As shown, the first surface 11 is parallel to the second surface 12. The area of ​​the first surface 11 is greater than or equal to the area of ​​the surface 41 of the photovoltaic element 4, and smaller than the area of ​​the second surface 12. The uneven side portion 131 of the outer peripheral side surface 13 is connected to the first surface 11 to form a concave structure. The flat side portion 132 is connected to the uneven side portion 131 at one end and perpendicular to the second surface 12 at the other end. In this embodiment, the uneven side portion 131, the side surface of the second light-transmitting layer 2, and the side surface 42 of the photovoltaic element 4 collectively define a receiving space.

[0063] The housing space is used to accommodate the frame 3, which fills the housing space. The frame 3 is disposed around the optoelectronic component 4 and contacts the optoelectronic component 4, the second light-transmitting layer 2, and at least a portion of the outer peripheral side surface 13 (i.e., the uneven side surface 131) of the first light-transmitting layer 1. Specifically, the frame 3 is made of an opaque material, covering the optoelectronic component 4 but exposing at least two electrode pads 4P. Because a portion of the frame 3 further extends to fill the concave structure formed by the uneven side surface 131, the bonding strength between the first light-transmitting layer 1 and the frame 3 is enhanced, as well as the overall structural strength of the optoelectronic package structure M.

[0064] For example, the first light-transmitting layer 1 is a transparent substrate, and its material can be, for example, a silicon-based material such as silicone resin, or materials such as glass or sapphire. Furthermore, the first light-transmitting layer 1 of the first embodiment is a transparent layer, but the present invention is not limited thereto. In other embodiments, the first light-transmitting layer 1 can also be a light conversion layer, a filter layer, or a light-adjusting layer containing scattering particles doped with a phosphor material. For example, phosphor materials include, but are not limited to, yttrium aluminum garnet (YAG), gallium garnet (GaYAG), lutidine aluminum oxide (LuAG), nitride, terbium aluminum oxide (TAG), and silicate. The second light-transmitting layer 2 is an adhesive layer, and its material can be, for example, silicone. In other embodiments, the second light-transmitting layer 2 can also be composed of a silicon-based material doped with wavelength-converting particles. The frame 3 can be a light-reflecting layer, and its material can be, but is not limited to, white silicone.

[0065] The optoelectronic component 4 can be a light-emitting component, such as an LED chip, which emits light with a wavelength between 200nm and 1100nm. In the present invention, the optoelectronic component 4 is an LED chip that emits green light (with a wavelength between 480nm and 570nm), but the present invention is not limited to this. In other embodiments, the optoelectronic component 4 can also be a light-receiving component, such as a photodiode, which receives light with a wavelength between 200nm and 1500nm. In the first embodiment, the optoelectronic component 4 is used as an example of a light-emitting component. The optoelectronic component 4 mainly emits light from its surface 41 and side 42. The light emitted by the optoelectronic component 4 can pass through the second light-transmitting layer 2 and the first light-transmitting layer 1, and is emitted to the external environment from the second surface 12 of the first light-transmitting layer 1. In other words, the second surface 12 of the first light-transmitting layer 1 is the light-emitting outer surface of the optoelectronic packaging structure M.

[0066] For example, see Figure 2 As shown, during the manufacturing process of the optoelectronic packaging structure M, a continuous silicone substrate (silicone sheet) serving as the first light-transmitting layer 1 is first cut (sawing) to form a plurality of grooves C. A plurality of optoelectronic components 4 are then inverted and bonded to the mounting positions between the plurality of grooves C of the silicone substrate using adhesive. After the adhesive cures, a second light-transmitting layer 2 is formed. Next, white silicone is filled between two adjacent optoelectronic components 4 through a dispensing process and cured to form a frame 3, thereby forming Figure 2 Multiple optoelectronic packaging structures M.

[0067] Next, the continuous packaging structure is divided into a plurality of independent optoelectronic packaging structures M along the cutting line L (the cutting line L is aligned with the middle position of the groove C), and the silicone substrate is divided to form a plurality of first light-transmitting layers 1. Figure 1and Figure 2 , Figure 1 The non-flat side portion 131 (or concave structure) is Figure 2 The first light-transmitting layer 1 has a predetermined thickness T, and the maximum vertical distance H of the non-planar side portion 131 is 50% to 90% of the predetermined thickness T. It is worth mentioning that since the non-planar side portion 131 is a part of the groove C, Figure 1 The maximum vertical distance H of the non-flat side portion 131 is Figure 2 The maximum depth of the middle groove C.

[0068] Continue reading Figure 1 The optoelectronic component 4 is bonded to the silicone substrate with an adhesive, and the adhesive is squeezed by the optoelectronic component 4 and extends toward the side surface 42 of the optoelectronic component 4. After the adhesive cures to form the second light-transmitting layer 2, the outer portion of the second light-transmitting layer 2 extends to a portion of the side surface 42 of the optoelectronic component 4, forming a light-guiding portion 21 that covers a portion of the side surface 42 of the optoelectronic component 4. The light-guiding portion 21 has an outer surface 211. An angle θ is formed between the outer surface 211 and the first surface 11 of the first light-transmitting layer 1, and the angle θ is at least greater than 20 degrees. Optionally, the angle θ is between 30 and 60 degrees.

[0069] Furthermore, because the first and second light-transmitting layers 1 and 2 are formed before the frame 3, during the forming process, the frame 3 covers the other side surface 42 of the optoelectronic component 4 (i.e., the portion of the side surface 42 not covered by the light-guiding portion 21), the light-guiding portion 21 of the second light-transmitting layer 2, and at least a portion of the first light-transmitting layer 1, and fills the concave structure formed by the uneven side portion 131. In other words, the structure of the frame 3 is shaped by the structures of the first and second light-transmitting layers 1 and 2, and the surface of the formed frame 3 structure adheres to the outer surface 211 of the light-guiding portion 21 and the surface of the uneven side portion 131. Therefore, by designing the light-guiding portion 21 so that the included angle θ is at least greater than 20 degrees and the maximum vertical distance H of the uneven side portion 131 is 50% to 90% of the predetermined thickness T of the first light-transmitting layer 1, the formed frame 3 structure can be made higher than the surface 41 of the optoelectronic component 4, and the contact surface between the light-guiding portion 21 and the frame 3, i.e., the outer surface 211 of the light-guiding portion 21, forms an inclined surface extending outward toward the first light-transmitting layer 1. A portion of the light emitted from the side surface 42 of the optoelectronic component 4 enters the light-guiding portion 21. When the light reaches the outer surface 211 of the light-guiding portion 21, it is reflected by the frame 3 and concentrated toward the light-emitting outer surface (second surface 12) of the optoelectronic package structure M, thereby reducing the light emission angle, concentrating the light, and increasing the light intensity. Specifically, through the above-mentioned design, the present invention can achieve a light emission angle of less than 120 degrees.

[0070] For example, the flat side portion 132 is a side plane connected to and perpendicular to the second surface 12 of the first light-transmitting layer 1. The non-flat side portion 131 can be a concave structure connected to the flat side portion 132 and the first surface 11 of the first light-transmitting layer 1, for example: a stepped structure with a step difference, a concave-convex structure or a curved concave structure. The surface profile of the non-flat side portion 131 can be, for example, an arc, a V-shape, a wave shape, a rectangle or any free-form surface, but the present invention is not limited thereto. Figure 1 As shown, in this embodiment, the non-flat side portion 131 is a curved concave structure, and its surface contour is an arc.

[0071] See Figure 1 and Figure 3 From the outside of the optoelectronic package structure M, the outer side surface 31 of the frame body 3 is flush with the edge of the second surface 12 of the first light-transmitting layer 1. In other words, the outer side surface 31 of the frame body 3 is aligned with the flat side portion 132 of the first light-transmitting layer 1. Furthermore, from the outside of the optoelectronic package structure M, the boundary E between the frame body 3 and the first light-transmitting layer 1 is a continuous horizontal line. However, it should be noted that the design of the frame body 3 is not limited to the above. In other embodiments, the highest top surface of the frame body 3 may be flush with the second surface 12 of the first light-transmitting layer 1. Therefore, from the side of the optoelectronic package structure M, only the outer side surface 31 of the frame body 3 is visible.

[0072] In the present invention, the first surface 11 of the first light-transmitting layer 1 used to be covered by the second light-transmitting layer 2 may also have a roughened structure (not shown in the figure), that is, the first surface 11 is first surface-treated, such as grinding to form a roughened surface. Optionally, the roughness of the roughened structure is greater than 1.3 μm. The roughened first surface 11 can increase the adhesion area between the second light-transmitting layer 2 (adhesive) and the first surface 11, thereby strengthening the bonding force of the second light-transmitting layer 2. Furthermore, the present invention increases the bonding area between the frame 3 and the first light-transmitting layer 1 by designing that the outer peripheral side surface 13 of the first light-transmitting layer 1 has a non-flat side portion 131, thereby strengthening the structural strength of the packaging structure.

[0073] like Figure 1 As shown, the first surface 11 and second surface 12 of the first light-transmitting layer 1 are parallel to each other. The area of ​​the first surface 11 is greater than or equal to the surface 41 of the photovoltaic component 4 and smaller than the area of ​​the second surface 12. Furthermore, the uneven side portion 131 is located outside the area where the photovoltaic component 4 is perpendicularly projected onto the first light-transmitting layer 1, preventing the uneven side portion 131 from shielding the photovoltaic component 4 and affecting the light extraction effect of the photovoltaic component 4.

[0074] Second embodiment

[0075] See Figure 4As shown, the second embodiment of the present invention provides an optoelectronic packaging structure M, which includes a first light-transmitting layer 1, a second light-transmitting layer 2, a frame 3 and an optoelectronic component 4. The optoelectronic packaging structure M of the second embodiment is similar to that of the first embodiment, and the similarities are not repeated here. The optoelectronic packaging structure M of the second embodiment of the present invention is different from that of the first embodiment in that the surface profile shape of the non-flat side portion 131 of the first light-transmitting layer 1 is different. In the second embodiment, the non-flat side portion 131 is a slope. In other words, Figure 2 The groove C is in a V-shaped structure. When the continuous packaging structure is cut along the cutting line L, the uneven side portion 131 in the formed optoelectronic packaging structure M will be in a slope shape.

[0076] Third embodiment

[0077] See Figure 5 As shown, the third embodiment of the present invention provides an optoelectronic packaging structure M, which includes a first light-transmitting layer 1, a second light-transmitting layer 2, a frame 3, and an optoelectronic component 4. The optoelectronic packaging structure M of the third embodiment is similar to that of the first embodiment, and the similarities are not repeated here. The difference between the optoelectronic packaging structure M of the third embodiment of the present invention and the first embodiment is that in the third embodiment, the non-flat side portion 131 is slightly a right angle surface. In other words, Figure 2 The groove C is generally U-shaped. When the continuous package structure is cut along the cutting line L, the uneven side portion 131 in the formed optoelectronic package structure M will be slightly right-angled.

[0078] Fourth embodiment

[0079] See Figure 6 As shown, the fourth embodiment of the present invention provides an optoelectronic package structure M, which includes a first light-transmitting layer 1, a second light-transmitting layer 2, a frame 3, and an optoelectronic component 4. The optoelectronic package structure M of the fourth embodiment is similar to the first embodiment, and the similarities are not repeated here. The difference between the optoelectronic package structure M of the fourth embodiment and the first embodiment is that, in the third embodiment, the non-flat side portion 131 is a stepped surface.

[0080] Fifth embodiment

[0081] See Figure 7 As shown, the fifth embodiment of the present invention provides an optoelectronic packaging structure M, which includes a first light-transmitting layer 1, a second light-transmitting layer 2, a frame 3 and an optoelectronic component 4. The optoelectronic packaging structure M of the fifth embodiment is similar to that of the fourth embodiment, and the similarities are not repeated here. The difference between the optoelectronic packaging structure M of the fifth embodiment of the present invention and the fourth embodiment is that the material of the frame 3 is different. In the fourth embodiment ( Figure 6 ), the material of the frame 3 can be white silicone with light reflection function (the same applies to the first to third embodiments), that is, the frame 3 can serve as a light reflection layer. In the fifth embodiment ( Figure 7 ), the material of the frame 3 may also be a resin (such as vinyl) with light-absorbing pigment or carbon black, that is, the frame 3 is an opaque light-absorbing layer.

[0082] Sixth embodiment

[0083] See Figure 8 As shown, the sixth embodiment of the present invention provides an optoelectronic packaging structure M, which not only includes a first light-transmitting layer 1, a second light-transmitting layer 2, a frame 3 and an optoelectronic component 4, but also further includes a light-shielding layer 6. The light-shielding layer 6 surrounds and connects the frame 3 and the first light-transmitting layer 1, and the top surface of the light-shielding layer 6 is flush with the second surface 12 of the first light-transmitting layer 1. In other words, the top surface of the light-transmitting layer 6 is higher than the top surface of the frame 3. The material of the light-shielding layer 6 can be, for example, a black light-absorbing material (such as vinyl). Through the configuration of the light-shielding layer 6, most of the light emitted by the optoelectronic component 4 to both sides can be reflected by the frame 3, and a small amount of light that passes through the frame 3 can be blocked by the light-shielding layer 6, ensuring that the light emitted by the optoelectronic component 4 can all be emitted toward the light-emitting outer surface (second surface 12) of the packaging structure. In other words, the light-emitting angle can be adjusted according to needs. In other embodiments, if the optoelectronic component 4 is a light-receiving component, the light-shielding layer 6 can be used to block external noise light to reduce the problem of optical cross-talk.

[0084] Furthermore, in another embodiment, the frame 3 and the light shielding layer 6 may be manufactured by a double-molded process to form an integrated double-molded structure.

[0085] Seventh embodiment

[0086] See Figure 9 As shown, the seventh embodiment of the present invention provides an optoelectronic packaging structure M, which includes a first light-transmitting layer 1, a second light-transmitting layer 2, a frame 3 and an optoelectronic component 4. The optoelectronic packaging structure M of the seventh embodiment is similar to that of the first embodiment, and the similarities are not repeated here. The difference between the optoelectronic packaging structure M of the seventh embodiment and the first embodiment is that the thickness (horizontal direction) of the frame 3 is larger. In the seventh embodiment, the top surface of the frame 3 is flush with the second surface 12 of the first light-transmitting layer 1. That is to say, in Figure 2 In the process of manufacturing the optoelectronic packaging structure M shown in the figure, the continuous silicone substrate is cut, for example, in two sections, to form a plurality of separated first light-transmitting layers 1. A gap is formed between two adjacent first light-transmitting layers 1, and a portion of the frame 3 extends to fill the gap between the two adjacent first light-transmitting layers 1. Then, similarly, along the cutting line L (the cutting line L is aligned with the middle position of the groove C), the first light-transmitting layer 1 is cut. Figure 2The continuous packaging structure is divided into multiple independent optoelectronic packaging structures M. Through the configuration of the frame 3 of this embodiment, the light emitted from the optoelectronic component 4 to both sides can be reflected by the frame 3, ensuring that the light emitted by the optoelectronic component 4 can all be emitted toward the light-emitting outer surface (second surface 12) of the packaging structure.

[0087] Eighth embodiment

[0088] See Figure 10 As shown, the eighth embodiment of the present invention provides an optoelectronic packaging structure M. The optoelectronic packaging structure M of the eighth embodiment is similar to that of the first embodiment, and the similarities are not repeated here. The difference between the optoelectronic packaging structure M of the eighth embodiment and the first embodiment is that the optoelectronic packaging structure M of the eighth embodiment not only includes a first light-transmitting layer 1, a second light-transmitting layer 2, a frame 3 and an optoelectronic component 4, but also further includes an optical component 5. The optical component 5 is arranged above the second surface 12 of the first light-transmitting layer 1. The optical component 5 can be a lens component for refracting light, and by designing the curvature of the lens, the light output angle can be adjusted according to different application requirements. For example, the optical component 5 can be a convex lens, a spherical lens or a Fresnel lens. The present invention is not limited to the type of the optical component 5.

[0089] Ninth embodiment

[0090] See Figure 11 As shown, the ninth embodiment of the present invention provides an optoelectronic packaging structure M, which includes a first light-transmitting layer 1, a second light-transmitting layer 2, a frame 3 and an optoelectronic component 4. The optoelectronic packaging structure M of the ninth embodiment is similar to that of the fifth embodiment, and the similarities are not repeated here. The main difference is that Figure 11 In the embodiment, the distribution area of ​​the second light-transmitting layer 2 at the solid crystal position is smaller. In other words, the second light-transmitting layer 2 does not extend to cover the side surface 42 of the optoelectronic component 4. Furthermore, the second light-transmitting layer 2 only covers a portion of the surface 41 of the optoelectronic component 4. For example, the area of ​​the second light-transmitting layer 2 after pressing accounts for 70% to 95% of the area of ​​the surface 41 of the optoelectronic component 4, and the outer peripheral side surface 13 of the first light-transmitting layer 1, the side surface of the second light-transmitting layer 2 and the side surface of the optoelectronic component 4 jointly define a accommodating space, and part of the frame 3 (for example: reflective or light-absorbing material) can further extend to cover the rest of the surface 41 (the portion of the surface 41 not covered by the second light-transmitting layer 2). In addition, in the ninth embodiment, the non-flat side portion 131 filled by the frame 3 is slightly a right-angled surface (i.e. Figure 2 The groove C in the embodiment is generally U-shaped).

[0091] Tenth embodiment

[0092] See Figure 12As shown, the tenth embodiment of the present invention provides an optoelectronic packaging structure M, which includes a first light-transmitting layer 1, a second light-transmitting layer 2, a frame 3, an optoelectronic component 4 and an opaque layer 6. The optoelectronic packaging structure M of the tenth embodiment is similar to that of the sixth embodiment, and the similarities are not repeated here. The main difference is that Figure 12 , the second light-transmitting layer 2 does not extend to cover the side surface 42 of the optoelectronic component 4, but only covers a portion of the surface 41 of the optoelectronic component 4. Furthermore, the first light-transmitting layer 1, the second light-transmitting layer 2 and the side surface of the optoelectronic component 4 jointly define a accommodating space. In this embodiment, the frame 3 can be a light-reflecting layer (such as a white glue layer), which can further extend to cover the rest of the surface 41, and the light-shielding layer 6 (such as a black light-absorbing material) surrounds and connects the frame 3 and the first light-transmitting layer 1, wherein the top surface of the light-shielding layer 6 is substantially flush with the second surface 12 of the first light-transmitting layer 1. In addition, in the tenth embodiment, the non-flat side portion 131 filled by the frame 3 is slightly a right-angled surface (i.e. Figure 2 The groove C in the embodiment is generally U-shaped).

[0093] Eleventh embodiment

[0094] See Figure 13 As shown, the eleventh embodiment of the present invention provides an optoelectronic packaging structure M, which includes a first light-transmitting layer 1, a second light-transmitting layer 2, a frame 3, an optoelectronic component 4, and a light-shielding layer 6. The optoelectronic packaging structure M of the eleventh embodiment is similar to that of the tenth embodiment, and the similarities are not repeated here. The main difference is that the first light-transmitting layer 1 of the eleventh embodiment can be made of sapphire material, such as Figure 13 As shown, the outer peripheral side surface 13 of the first light-transmitting layer 1 is a flat side portion 132 perpendicular to the first surface 11 and the second surface 12. Figure 12 Compared to the tenth embodiment, the outer peripheral side surface 13 of the first light-transmitting layer 1 has only a flat side portion 132 and does not have a non-flat side portion 131. In this embodiment, a portion of the first surface 11 of the first light-transmitting layer 1, the side surface of the second light-transmitting layer 2, a portion of the surface 41 of the optoelectronic component 4, and the side surface of the optoelectronic component 4 collectively define a housing space. The frame 3 (e.g., a light-reflecting layer) is located in the housing space. In other words, a portion of the frame 3 further extends to cover the remaining portion of the surface 41 (not covered by the second light-transmitting layer 2). The light-shielding layer 6 (e.g., a black light-absorbing material) surrounds and is attached to the frame 3 and the flat side portion 132 of the first light-transmitting layer 1, wherein the top surface of the light-shielding layer 6 is substantially flush with the second surface 12 of the first light-transmitting layer 1.

[0095] In the eleventh embodiment, for example, when the optoelectronic component 4 is a light-receiving component, such as a visible light photodiode, the second light-transmitting layer 2 can be composed of a silicon base material 20 doped with first wavelength conversion particles 71, such as silica gel doped with red wavelength conversion particles (i.e., the first wavelength conversion particles 71 are wavelength conversion particles that generate red light, such as red phosphor). In addition, the optoelectronic packaging structure M further includes a light filter layer 8, such as an infrared pass filter. As shown in Figure 13 the upper and / or lower surface (i.e., the first surface 11 and / or the second surface 12) of the first light-transmitting layer 1 is covered by the light filter layer 8.

[0096] This embodiment forms the infrared pass filter layer 8 by doping the second light-transmitting layer 2 with red phosphor and covering the upper and / or lower surface (i.e., the first surface 11 and / or the second surface 12) of the first light-transmitting layer 1, so that the visible light photodiode (i.e., the optoelectronic component 4) can receive ultraviolet-visible (UV-Vis) light.

[0097] Twelfth embodiment

[0098] Referring to Figure 14 As shown in the twelfth embodiment of the utility model, an optoelectronic packaging structure M includes a first light-transmitting layer 1, a second light-transmitting layer 2, a frame 3, and an optoelectronic component 4. The optoelectronic packaging structure M of the twelfth embodiment is similar to the eleventh embodiment, and the similarities will not be described here. In the twelfth embodiment, the first light-transmitting layer 1 can be made of sapphire material, and the optoelectronic component 4 is, for example, an ultraviolet light-emitting diode (UV LED) chip, which can be a UVC LED chip. The second light-transmitting layer 2 can be composed of a silicon base material 20 doped with first wavelength conversion particles 71, such as silica gel doped with blue wavelength conversion particles (i.e., the first wavelength conversion particles 71 are wavelength conversion particles that generate blue light, such as blue phosphor). The frame 3 (e.g., a light-reflecting layer) further includes second wavelength conversion particles 72, which can also be blue wavelength conversion particles. In the twelfth embodiment, the weight percentage concentration of the second wavelength conversion particles 72 in the frame 3 is higher than the weight percentage concentration of the first wavelength conversion particles 71 in the second light-transmitting layer 2. Optionally, for example, the weight percentage concentration of the second wavelength conversion particles 72 in the frame 3 is about 10%, and the weight percentage concentration of the first wavelength conversion particles 71 in the second light-transmitting layer 2 is about 2%. By adjusting the configuration and concentration ratio of the first and second wavelength conversion particles 71, 72 in the second light-transmitting layer 2 and the frame 3, respectively, the leakage of violet light from the optoelectronic packaging structure M can be prevented, and the brightness of blue light can be further improved.

[0099] Advantages of the embodiments

[0100] The optoelectronic packaging structure M provided by the present invention can make the angle θ of the light-guiding portion 21 at least greater than 20 degrees and the maximum vertical distance H of the non-flat side portion 131 be 50% to 90% of the preset thickness of the first light-transmitting layer 1, so that the molded frame 3 structure is higher than the surface 41 of the optoelectronic component 4, and the contact surface between the light-guiding portion 21 and the frame 3, that is, the outer surface 211 of the light-guiding portion 21, forms a steep inclined surface. A portion of the light emitted from the side surface 42 of the optoelectronic component 4 will enter the light-guiding portion 21 and be reflected by the frame 3, and then be concentrated toward the light-emitting outer surface (second surface 12) of the optoelectronic packaging structure M, thereby reducing the light-emitting angle, concentrating the light, and thereby increasing the light intensity. Compared with the light-emitting angle of the optoelectronic packaging structure of the prior art, which is approximately 130 degrees, the light-emitting angle of the optoelectronic packaging structure M of the present invention can be reduced to below 120 degrees.

[0101] Furthermore, in the present invention, the first surface 11 where the first light-transmitting layer 1 and the second light-transmitting layer 2 are bonded has a roughened structure, that is, the first surface 11 forms a roughened surface. Optionally, the roughness of the roughened structure is greater than 1.3 μm. The roughened first surface 11 can increase the adhesion area with the second light-transmitting layer 2 (adhesive layer), thereby strengthening the bonding force between the first light-transmitting layer 1 and the optoelectronic component 4 to avoid peeling between the first light-transmitting layer 1 and the optoelectronic component 4. In addition, the present invention can also increase the bonding area between the frame 3 and the first light-transmitting layer 1 by designing the outer peripheral side surface 13 of the first light-transmitting layer 1 with a non-flat side portion 131, thereby strengthening the structural strength of the packaging structure M.

[0102] In addition, the optoelectronic packaging structure M provided by the present invention has a smaller distribution area of ​​the second light-transmitting layer 2 at the die-bonding position (see FIG. Figures 9 to 14 In the embodiment shown, the second light-transmitting layer 2 does not extend to cover the side surfaces 42 of the photovoltaic element 4. Specifically, the second light-transmitting layer 2 only covers a portion of the surface 41 of the photovoltaic element 4. For example, after lamination, the area of ​​the second light-transmitting layer 2 accounts for 70% to 95% of the surface 41 of the photovoltaic element 4. The first light-transmitting layer 1, the second light-transmitting layer 2, and the side surfaces of the photovoltaic element 4 jointly define a housing space. A portion of the frame 3 (e.g., a reflective or light-absorbing material) can further extend to cover the remaining portion of the surface 41 (the portion not covered by the second light-transmitting layer 2), thereby increasing the bonding area between the frame 3, the first light-transmitting layer 1, and the photovoltaic element 4, thereby enhancing the structural strength of the package structure.

[0103] The contents disclosed above are only preferred feasible embodiments of the present invention and do not limit the scope of protection of the claims of the present invention. Therefore, all equivalent technical changes made using the contents of the description and drawings of the present invention are included in the scope of protection of the claims of the present invention.

Claims

1. An optoelectronic packaging structure, characterized in that: The optoelectronic packaging structure comprises: A photovoltaic component having a surface and a side surface connected thereto; a first light-transmitting layer disposed above the photovoltaic component, the first light-transmitting layer having a first surface and a second surface opposite to each other, and a peripheral side surface connecting the first surface and the second surface, the first surface facing the surface of the photovoltaic component, the peripheral side surface having a non-flat side portion, the non-flat side portion being located between the first surface and the second surface and outside a region of the photovoltaic component perpendicularly projected onto the first light-transmitting layer; a second light-transmitting layer disposed between the optoelectronic component and the first light-transmitting layer; and A frame at least surrounds and connects the optoelectronic component and the side surface of the second light-transmitting layer, wherein a portion of the frame also fills the uneven side portion.

2. The optoelectronic packaging structure according to claim 1, wherein: An outer portion of the second light-transmitting layer extends to a portion of the side surface of the optoelectronic component to form a light-guiding portion covering a portion of the side surface of the optoelectronic component.

3. The optoelectronic packaging structure according to claim 1, wherein: The first surface of the first light-transmitting layer has a roughened structure.

4. The optoelectronic packaging structure according to claim 3, wherein: The roughness of the roughened structure is greater than 1.3 μm.

5. The optoelectronic packaging structure according to claim 1, wherein: The first surface of the first light-transmitting layer is parallel to the second surface, the area of ​​the first surface is greater than or equal to the area of ​​the surface of the optoelectronic component and smaller than the area of ​​the second surface, and the uneven side portion of the outer peripheral side is connected to the first surface to form a concave structure.

6. The optoelectronic packaging structure according to any one of claims 1 to 5, characterized in that: The outer peripheral side surface of the first light-transmitting layer also includes a flat side portion, which is a side plane perpendicular to the second surface of the first light-transmitting layer. The non-flat side portion, the side surface of the second light-transmitting layer and part of the side surface of the optoelectronic component jointly define a accommodating space, which is used to accommodate the frame.

7. The optoelectronic packaging structure according to claim 6, wherein: The uneven side portion is a stepped structure, a concave-convex structure, or a curved concave structure connected to the first surface of the first light-transmitting layer.

8. The optoelectronic packaging structure according to claim 7, wherein: The surface profile of the non-flat side portion is an inclined surface, a right-angle surface, an arc, a V-shape, a wave shape, a rectangle or a free-form surface.

9. The optoelectronic packaging structure according to claim 6, wherein: The first light-transmitting layer has a preset thickness, and the maximum vertical distance of the uneven side portion is 50% to 90% of the preset thickness.

10. The optoelectronic packaging structure according to claim 2, wherein: An angle between an outer surface of the light guide portion and the first surface of the first light-transmitting layer is at least greater than 20 degrees.

11. The optoelectronic packaging structure according to claim 10, wherein: The angle is 30 to 60 degrees.

12. The optoelectronic packaging structure according to claim 1, wherein: The first light-transmitting layer is a transparent layer, a light conversion layer doped with phosphor material, a filter layer, or a light adjustment layer having scattering particles.

13. The optoelectronic packaging structure according to claim 1, wherein: The light-emitting outer surface of the optoelectronic packaging structure is formed by the second surface of the first light-transmitting layer, and the outer side surface of the frame is aligned with the edge of the second surface.

14. The optoelectronic packaging structure according to claim 1, wherein: The optoelectronic packaging structure further includes an optical component disposed above the second surface of the first light-transmitting layer.

15. The optoelectronic packaging structure according to claim 1, wherein: The photoelectric component is a light-emitting component, and the wavelength of the light emitted by the photoelectric component is between 200nm and 1100nm.

16. The optoelectronic packaging structure according to claim 15, wherein: The photoelectric component is a light-emitting component, and the wavelength of the light emitted by the photoelectric component is between 480nm and 570nm.

17. The optoelectronic packaging structure according to claim 1, wherein: The photoelectric component is a light receiving component, and the wavelength of the light received by the photoelectric component is between 200nm and 1500nm.

18. The optoelectronic packaging structure according to claim 1, wherein: The top surface of the frame is flush with the second surface of the first light-transmitting layer.

19. The optoelectronic packaging structure according to claim 1, wherein: The frame is a light reflecting layer or a light absorbing layer.

20. The optoelectronic packaging structure according to claim 1, wherein: The optoelectronic packaging structure further includes a light shielding layer, which surrounds and is connected to the frame, and the top surface of the light shielding layer is flush with the second surface of the first light-transmitting layer.

21. An optoelectronic packaging structure, characterized in that: The optoelectronic packaging structure comprises: A photovoltaic component having a surface and a side surface connected thereto; a first light-transmitting layer disposed above the photovoltaic component, the first light-transmitting layer having a first surface and a second surface opposite to each other, and a peripheral side surface connecting the first surface and the second surface, the first surface facing the surface of the photovoltaic component; a second light-transmitting layer located between the optoelectronic component and the first light-transmitting layer, wherein the outer peripheral side surface of the first light-transmitting layer, the side surface of the second light-transmitting layer, and the side surface of the optoelectronic component jointly define an accommodating space; and A frame fills the accommodating space and at least surrounds and connects the side surface of the optoelectronic component and the side surface of the second light-transmitting layer.

22. The optoelectronic packaging structure according to claim 21, wherein: The frame is a light reflecting layer or a light absorbing layer.

23. The optoelectronic packaging structure according to claim 21, wherein: The optoelectronic packaging structure further includes a light shielding layer surrounding the frame body, the light shielding layer surrounds and connects to the frame body, and the top surface of the light shielding layer is flush with the second surface of the first light-transmitting layer.

24. The optoelectronic packaging structure according to claim 21, wherein: The second light-transmitting layer is made of a silicon base material.

25. The optoelectronic packaging structure according to claim 21, wherein: The optoelectronic component is a visible light photodiode.

26. The optoelectronic packaging structure according to claim 21, wherein: The first light-transmitting layer is made of a silicon base material.

27. The optoelectronic packaging structure according to claim 21, wherein: The first light-transmitting layer is made of sapphire material.

28. The optoelectronic packaging structure according to any one of claims 21 and 27, wherein: The photoelectric component is an ultraviolet light emitting diode component.

29. The optoelectronic packaging structure according to any one of claims 21 to 27, characterized in that: The optoelectronic packaging structure further includes a filter layer, and the filter layer covers the first surface and / or the second surface of the first light-transmitting layer.

30. The optoelectronic packaging structure according to claim 21, wherein: The outer peripheral side surface of the first light-transmitting layer has a non-flat side portion, and the non-flat side portion is located between the first surface and the second surface and outside the area where the optoelectronic component is vertically projected onto the first light-transmitting layer.

31. The optoelectronic packaging structure according to claim 21, wherein: The second light-transmitting layer covers a portion of the surface of the optoelectronic component, and an area of ​​the second light-transmitting layer occupies 70% to 95% of the surface area of ​​the optoelectronic component.

32. The optoelectronic packaging structure according to claim 30, wherein: The frame is located in the accommodating space and extends to fill the uneven side portion of the first light-transmitting layer.

33. The optoelectronic packaging structure according to claim 31, wherein: The frame fills the accommodating space and covers another portion of the surface of the optoelectronic component.