Antireflection film, perovskite / crystalline silicon laminated solar cell and photovoltaic module

Abstract

The utility model provides an antireflection film, a perovskite / crystalline silicon laminated solar cell and a photovoltaic module, and relates to the technical field of solar cells. The antireflection film comprises first areas and second areas which are alternately distributed; the first region is a first silicon nitride layer; the second region is a silicon oxide layer; the edge end faces of the adjacent first silicon nitride layer and the silicon oxide layer are connected. According to the technical scheme, the refractive indexes and the reflectivity of the first silicon nitride layer and the silicon oxide layer forming the antireflection film are different, light absorption can be optimized, reflection loss can be reduced, and compared with a single-layer antireflection film made of a single material, the reflection loss of light on the surface of the solar cell can be greatly reduced, and the photoelectric conversion efficiency of the solar cell is improved.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to anti-reflection films, perovskite / crystalline silicon stacked solar cells, and photovoltaic modules. Background Art

[0002] Perovskite materials have a wide bandgap and can absorb short-wavelength light. Perovskite solar cells have attracted attention due to their high photoelectric conversion efficiency, simple structure, diverse preparation processes, and low cost. Crystalline silicon materials have a narrower bandgap and can absorb long-wavelength light. Crystalline silicon solar cells are one of the most common solar cells. Their surface reflectivity is high, and even after surface treatment, some light reflection is lost. Perovskite / crystalline silicon tandem solar cells primarily utilize the wide bandgap, high absorption coefficient, and high carrier mobility of perovskite materials, along with the narrower bandgap, stability, and good electron transport properties of crystalline silicon, to improve the photoelectric conversion efficiency of solar cells.

[0003] In all types of solar cells, light reflection loss from the cell surface is a significant factor limiting the improvement of the cell's photoelectric conversion efficiency. Currently, all types of solar cells typically use a single-layer anti-reflection film made of a single material to reduce light reflection loss from the cell surface. However, the anti-reflection ability of a single-layer anti-reflection film is limited, affecting the solar cell's photoelectric conversion efficiency.

[0004] It should be noted that the above content is not necessarily prior art, nor is it intended to limit the scope of patent protection of this application. Utility Model Content

[0005] In response to the shortcomings of the existing technology, the purpose of this application is to provide an anti-reflection film, perovskite / crystalline silicon stacked solar cell, and photovoltaic module that can optimize light absorption, significantly reduce the reflection loss of light on the surface of solar cells, and improve the photoelectric conversion efficiency of solar cells.

[0006] To achieve the above objectives, this application adopts the following technical solutions:

[0007] An anti-reflection film comprises a first region and a second region that are alternately distributed;

[0008] The first region is a first silicon nitride layer;

[0009] The second region is a silicon oxide layer; the edge end surfaces of the adjacent first silicon nitride layer and the silicon oxide layer are connected.

[0010] In some embodiments, the anti-reflection film has a thickness of 50-100 nm.

[0011] In some embodiments, the first regions and the second regions are arranged in an array.

[0012] In some embodiments, the width of any one of the first regions is 50-100 mm;

[0013] And / or, the width of any one of the second regions is 50-100 mm.

[0014] The present application also provides a perovskite / crystalline silicon tandem solar cell, comprising a perovskite cell and the anti-reflection film as described above;

[0015] Wherein, the anti-reflection film is arranged on the light-receiving surface of the perovskite cell.

[0016] In some embodiments, a crystalline silicon cell is further included; the perovskite cell and the crystalline silicon cell are stacked;

[0017] A second silicon nitride layer is provided between the perovskite cell and the crystalline silicon cell.

[0018] In some embodiments, the second silicon nitride layer includes a first sub-silicon nitride layer and a second sub-silicon nitride layer, and the first sub-silicon nitride layer and the second sub-silicon nitride layer are stacked.

[0019] In some embodiments, the first sub-silicon nitride layer is closer to the perovskite cell than the second sub-silicon nitride layer;

[0020] The thickness of the first silicon nitride layer is 20-30 nm;

[0021] And / or, the thickness of the second silicon nitride sub-layer is 10-20 nm.

[0022] In some embodiments, the perovskite / crystalline silicon stacked solar cell includes a first electrode, a first transparent conductive layer, an N-type doped amorphous silicon layer, a first intrinsic amorphous silicon layer, an N-type crystalline silicon layer, a second intrinsic amorphous silicon layer, a P-type doped amorphous silicon layer, a second silicon nitride layer, a second transparent conductive layer, a hole transport layer, a perovskite layer, an electron transport layer, a third transparent conductive layer, the anti-reflection film, and a second electrode stacked in sequence.

[0023] The present application also provides a photovoltaic module, comprising:

[0024] Such as the perovskite / crystalline silicon tandem solar cell mentioned above.

[0025] In the technical solution of the present application, the first silicon nitride layer and the silicon oxide layer that constitute the anti-reflection film have different refractive indices and reflectivities, which can optimize light absorption and reduce reflection losses. Compared with a single-layer anti-reflection film made of a single material, it can significantly reduce the reflection loss of light on the surface of the solar cell and improve the photoelectric conversion efficiency of the solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar components or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in this application and should not be construed as limiting the scope of this application.

[0027] Figure 1 This is a schematic structural diagram of a perovskite / crystalline silicon tandem solar cell in an embodiment of the present application;

[0028] Figure 2 Schematic diagram of the structure of the anti-reflection film in the embodiment of the present application;

[0029] Figure 3 Schematic diagram of the structure of the perovskite / crystalline silicon tandem solar cell in the comparative example of this application.

[0030] Numbers in the figure: 1. first electrode; 2. first transparent conductive layer; 3. N-type doped amorphous silicon layer; 4. first intrinsic amorphous silicon layer; 5. N-type crystalline silicon layer; 6. second intrinsic amorphous silicon layer; 7. P-type doped amorphous silicon layer; 8. second silicon nitride layer; 81. first sub-silicon nitride layer; 82. second sub-silicon nitride layer; 9. second transparent conductive layer; 10. hole transport layer; 11. perovskite layer; 12. electron transport layer; 13. third transparent conductive layer; 14. anti-reflection film; 141. first silicon nitride layer; 142. silicon oxide layer; 15. second electrode. DETAILED DESCRIPTION

[0031] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings. In the accompanying drawings, the sizes of layers, regions, and elements and their relative sizes may be exaggerated for clarity. The same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and should not be understood as limiting the present application. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other unless there is a conflict.

[0032] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or there can be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that while the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another. Thus, without departing from the teachings of the present disclosure, a first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part. Furthermore, when a second element, component, region, layer, or part is discussed, it does not necessarily mean that the first element, component, region, layer, or part is present in the present disclosure.

[0033] In this application, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0034] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way are interchangeable where appropriate, so that the embodiments of the present application described herein can, for example, be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0035] In the present application, when it comes to a numerical interval (i.e., a numerical range), unless otherwise specified, the distribution of the optional numerical values ​​in the numerical interval is considered to be continuous, and includes the two numerical endpoints (i.e., the minimum and maximum values) of the numerical interval, and each numerical value between the two numerical endpoints. Unless otherwise specified, when the numerical interval only refers to an integer in the numerical interval, including the two endpoint integers of the numerical range, and each integer between the two endpoints, is equivalent to directly enumerating each integer. When multiple numerical ranges are provided to describe a feature or characteristic, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical range disclosed in this application should be understood to include any and all subranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, a percentage, a ratio, etc. "Numerical interval" allows broadly including quantitative intervals such as percentage intervals, ratio intervals, and ratio intervals.

[0036] The present invention provides an anti-reflection film, a perovskite / crystalline silicon tandem solar cell, and a photovoltaic module. The first silicon nitride layer 141 and the silicon oxide layer 142 comprising the anti-reflection film 14 have different refractive indices and reflectivities, which optimize light absorption and reduce reflection losses. Compared to a single-layer anti-reflection film made of a single material, this significantly reduces light reflection losses on the solar cell surface, thereby improving the solar cell's photoelectric conversion efficiency.

[0037] The embodiment of the present application provides an anti-reflection film 14, comprising first regions and second regions that are alternately distributed;

[0038] The first region is a first silicon nitride layer 141;

[0039] The second region is a silicon oxide layer 142 ; the edge end surfaces of the adjacent first silicon nitride layer 141 and the silicon oxide layer 142 are connected.

[0040] In the embodiment of the present application, the purpose of spacing the first silicon nitride layer 141 and the silicon oxide layer 142 apart is to optimize light absorption and reduce reflection loss by utilizing the different refractive indices and reflectivities of the first silicon nitride layer 141 and the silicon oxide layer 142. Therefore, the first silicon nitride layer 141 and the silicon oxide layer 142 can be spaced apart, and the specific arrangement of the first silicon nitride layer 141 and the silicon oxide layer 142 can be patterned according to actual needs. The thickness of the first silicon nitride layer 141 and the silicon oxide layer 142 can be the same or different. Considering factors such as the overall performance of the device and surface flatness, the thickness of the first silicon nitride layer 141 and the silicon oxide layer 142 is preferably consistent.

[0041] In the embodiment of the present application, the thickness of the anti-reflection film 14 can range from nanometers to micrometers, and the thickness of the anti-reflection film 14 can be set according to actual needs. The first silicon nitride layer 141 can be prepared by one or more of plasma-enhanced chemical vapor deposition, low-pressure chemical vapor deposition, and atomic layer deposition. The silicon oxide layer 142 can be prepared by one or more of chemical vapor deposition and sputtering.

[0042] In the embodiment of the present application, the first silicon nitride layer 141 and the silicon oxide layer 142 that constitute the anti-reflection film 14 have different refractive indices and reflectivities, which can optimize light absorption and reduce reflection losses. Compared with a single-layer anti-reflection film made of a single material, it can significantly reduce the reflection loss of light on the surface of the solar cell and improve the photoelectric conversion efficiency of the solar cell.

[0043] In some embodiments, the thickness of the anti-reflection film 14 is 50-100 nm (eg, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm).

[0044] In the embodiment of the present application, by comprehensively considering factors such as the wavelength of light, the refractive index of the film material, and the required spectral range, the thickness of the anti-reflection film 14 is optimized, which can achieve a better anti-reflection effect, reduce the reflection loss of light, and improve light absorption, thereby improving the photoelectric conversion efficiency of the solar cell.

[0045] In some embodiments, the first regions and the second regions are arranged in an array.

[0046] In the embodiment of the present application, the first silicon nitride layer 141 and the silicon oxide layer 142 are arranged in an array; more specifically, the first silicon nitride layer 141 and the silicon oxide layer 142 are arranged in an array in a single row and a plurality of columns; or the first silicon nitride layer 141 and the silicon oxide layer 142 are arranged in an array in a plurality of rows and a plurality of columns. While the first silicon nitride layer 141 and the silicon oxide layer 142 are arranged in an array, the first silicon nitride layer 141 and the silicon oxide layer 142 are alternately distributed; the arrangement of the first silicon nitride layer 141 and the silicon oxide layer 142 can be as follows Figure 2 As shown, the silicon nitride layers 141 and the silicon oxide layers 142 are arranged in an array in the form of 1 row and 7 columns, and the first silicon nitride layers 141 and the silicon oxide layers 142 are alternately distributed.

[0047] In the embodiment of the present application, optimizing the arrangement of the first silicon nitride layer 141 and the silicon oxide layer 142 can further optimize light absorption and reduce reflection loss, thereby significantly reducing the reflection loss of light on the surface of the solar cell and improving the photoelectric conversion efficiency of the solar cell.

[0048] In some embodiments, a width of any one of the first regions is 50 to 100 mm (e.g., 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm);

[0049] And / or, a width of any one of the second regions is 50-100 mm (eg, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm).

[0050] In the embodiments of this application, it should be noted that the anti-reflection film 14 is applied to the outer surface of the solar cell to reduce reflection. Therefore, the dimensions of the anti-reflection film 14 are consistent with those of the solar cell, and the length and width of the anti-reflection film 14 can be adjusted accordingly. In other words, the lengths of the first region (first silicon nitride layer 141) and the second region (silicon oxide layer 142) are the same as the length of the solar cell. Optimizing the arrangement of the first silicon nitride layer 141 and silicon oxide layer 142 can further optimize light absorption and reduce reflection losses, thereby significantly reducing reflection losses on the solar cell surface and improving the solar cell's photoelectric conversion efficiency.

[0051] The present application also provides a perovskite / crystalline silicon tandem solar cell, comprising a perovskite cell and the anti-reflection film 14 as described above;

[0052] The anti-reflection film 14 is arranged on the light-receiving surface of the perovskite cell.

[0053] In the embodiments of the present application, the perovskite cell in a perovskite / crystalline silicon tandem solar cell can be located at the topmost layer of the structure, responsible for absorbing short-wavelength light. Crystalline silicon cells are also included, including but not limited to TopCON cells, heterojunction cells (HJT), and back-contact cells (IBC). Crystalline silicon cells can serve as the foundation of the perovskite / crystalline silicon tandem solar cell, located at the bottommost layer of the structure, responsible for absorbing long-wavelength light and converting it into electrical energy. The specific structures of the perovskite and crystalline silicon cells can be customized according to actual needs.

[0054] In the embodiment of the present application, the first silicon nitride layer 141 and the silicon oxide layer 142 that constitute the anti-reflection film 14 have different refractive indices and reflectivities, which can optimize light absorption and reduce reflection losses. Compared with a single-layer anti-reflection film made of a single material, it can significantly reduce the reflection loss of light on the surface of the solar cell and improve the photoelectric conversion efficiency of the solar cell.

[0055] In some embodiments, a crystalline silicon cell is further included; the perovskite cell and the crystalline silicon cell are stacked;

[0056] A second silicon nitride layer 8 is provided between the perovskite cell and the crystalline silicon cell.

[0057] In the embodiment of the present application, in the perovskite / crystalline silicon stacked solar cell, an anti-reflection film 14 as described above is provided on the light-receiving surface of the perovskite cell, and a second silicon nitride layer 8 is provided between the perovskite cell and the crystalline silicon cell. The second silicon nitride layer 8 can not only change the interface reflectivity and affect the propagation path of light in the cell, but also further optimize the absorption of light and reduce reflection loss, thereby reducing the reflection loss of light on the surface of the solar cell and improving the photoelectric conversion efficiency of the solar cell.

[0058] In some embodiments, the second silicon nitride layer 8 includes a first sub-silicon nitride layer 81 and a second sub-silicon nitride layer 82 , and the first sub-silicon nitride layer 81 and the second sub-silicon nitride layer 82 are stacked.

[0059] In the embodiment of the present application, optimizing the structure of the second silicon nitride layer 8 can further change the interface reflectivity and the propagation path of light in the cell, optimize light absorption, and reduce reflection loss, thereby reducing the reflection loss of light on the surface of the solar cell and improving the photoelectric conversion efficiency of the solar cell.

[0060] In some embodiments, the first sub-silicon nitride layer 81 is closer to the perovskite cell than the second sub-silicon nitride layer 82;

[0061] The thickness of the first silicon nitride sub-layer 81 is 20-30 nm (for example, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, 30 nm);

[0062] And / or, the second silicon nitride sub-layer 82 has a thickness of 10-20 nm (eg, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm).

[0063] In the embodiment of the present application, optimizing the structure of the second silicon nitride layer 8 can further change the interface reflectivity and the propagation path of light in the cell, optimize light absorption, and reduce reflection loss, thereby reducing the reflection loss of light on the surface of the solar cell and improving the photoelectric conversion efficiency of the solar cell.

[0064] In some embodiments, the perovskite / crystalline silicon stacked solar cell includes a first electrode 1, a first transparent conductive layer 2, an N-type doped amorphous silicon layer 3, a first intrinsic amorphous silicon layer 4, an N-type crystalline silicon layer 5, a second intrinsic amorphous silicon layer 6, a P-type doped amorphous silicon layer 7, a second silicon nitride layer 8, a second transparent conductive layer 9, a hole transport layer 10, a perovskite layer 11, an electron transport layer 12, a third transparent conductive layer 13, the anti-reflection film 14, and a second electrode 15, which are stacked in sequence.

[0065] In the embodiments of the present application, the structure of the perovskite / crystalline silicon tandem solar cell is optimized to optimize light absorption and reduce reflection loss, thereby reducing the reflection loss of light on the surface of the perovskite / crystalline silicon tandem solar cell and improving the photoelectric conversion efficiency of the perovskite / crystalline silicon tandem solar cell.

[0066] The following specific examples further illustrate the present invention, but should not be construed as limiting the present invention. Modifications or substitutions made to the methods, steps, or conditions of the present invention without departing from the spirit and substance of the present invention are within the scope of the present invention.

[0067] Example 1

[0068] Perovskite / crystalline silicon tandem solar cells include perovskite cells and crystalline silicon cells. Perovskite / crystalline silicon tandem solar cells are obtained by stacking crystalline silicon cells and perovskite cells. Perovskite / crystalline silicon tandem solar cells are as follows: Figure 1 As shown, the perovskite / crystalline silicon tandem solar cell includes a first electrode 1, a first transparent conductive layer 2, an N-type doped amorphous silicon layer 3, a first intrinsic amorphous silicon layer 4, an N-type crystalline silicon layer 5, a second intrinsic amorphous silicon layer 6, a P-type doped amorphous silicon layer 7, a second silicon nitride layer 8, a second transparent conductive layer 9, a hole transport layer 10, a perovskite layer 11, an electron transport layer 12, a third transparent conductive layer 13, an anti-reflection film 14, a first silicon nitride layer 141, a silicon oxide layer 142, and a second electrode 15, which are stacked in sequence;

[0069] The second silicon nitride layer 8 includes a first sub-silicon nitride layer 81 and a second sub-silicon nitride layer 82 stacked in sequence; the first sub-silicon nitride layer 81 is closer to the second transparent conductive layer 9 than the second sub-silicon nitride layer 82; the thickness of the first sub-silicon nitride layer 81 is 20 nm; the thickness of the second sub-silicon nitride layer 82 is 10 nm; and the thickness of the second silicon nitride layer 8 is 30 nm.

[0070] The anti-reflection film 14 is as follows Figure 1-Figure 2 As shown, the anti-reflection film 14 includes a first region and a second region that are alternately distributed; the first region is a first silicon nitride layer 141; the second region is a silicon oxide layer 142; the edge end faces of the adjacent first silicon nitride layers 141 and the silicon oxide layers 142 are connected; the thickness of the anti-reflection film 14 is 50nm (the thickness of the first silicon nitride layer 141 and the silicon oxide layer 142 are both 50nm); the arrangement of the first silicon nitride layer 141 and the silicon oxide layer 142 is as follows Figure 2As shown, the array is arranged in the form of one row and multiple columns, and the first silicon nitride layer 141 and the silicon oxide layer 142 are alternately distributed; the length of the first region (first silicon nitride layer 141) and the second region (silicon oxide layer 142) is the same as the length of the perovskite / crystalline silicon stacked solar cell; the width of any first region (first silicon nitride layer 141) is 50 mm; the width of any second region (silicon oxide layer 142) is 50 mm.

[0071] Example 2

[0072] Perovskite / crystalline silicon tandem solar cells include perovskite cells and crystalline silicon cells. Perovskite / crystalline silicon tandem solar cells are obtained by stacking crystalline silicon cells and perovskite cells. Perovskite / crystalline silicon tandem solar cells are as follows: Figure 1 As shown, the perovskite / crystalline silicon tandem solar cell includes a first electrode 1, a first transparent conductive layer 2, an N-type doped amorphous silicon layer 3, a first intrinsic amorphous silicon layer 4, an N-type crystalline silicon layer 5, a second intrinsic amorphous silicon layer 6, a P-type doped amorphous silicon layer 7, a second silicon nitride layer 8, a second transparent conductive layer 9, a hole transport layer 10, a perovskite layer 11, an electron transport layer 12, a third transparent conductive layer 13, an anti-reflection film 14, a first silicon nitride layer 141, a silicon oxide layer 142, and a second electrode 15, which are stacked in sequence;

[0073] The second silicon nitride layer 8 includes a first sub-silicon nitride layer 81 and a second sub-silicon nitride layer 82 stacked in sequence; the first sub-silicon nitride layer 81 is closer to the second transparent conductive layer 9 than the second sub-silicon nitride layer 82; the thickness of the first sub-silicon nitride layer 81 is 30 nm; the thickness of the second sub-silicon nitride layer 82 is 20 nm; and the thickness of the second silicon nitride layer 8 is 50 nm.

[0074] The anti-reflection film 14 is as follows Figure 1-Figure 2 As shown, the anti-reflection film 14 includes a first region and a second region that are alternately distributed; the first region is a first silicon nitride layer 141; the second region is a silicon oxide layer 142; the edge end faces of the adjacent first silicon nitride layers 141 and the silicon oxide layers 142 are connected; the thickness of the anti-reflection film 14 is 100 nm (the thickness of the first silicon nitride layer 141 and the silicon oxide layer 142 are both 100 nm); the arrangement of the first silicon nitride layer 141 and the silicon oxide layer 142 is as follows Figure 2 As shown, they are arranged in an array in the form of one row and multiple columns, and the first silicon nitride layer 141 and the silicon oxide layer 142 are alternately distributed; the length of the first region (first silicon nitride layer 141) and the second region (silicon oxide layer 142) is the same as the length of the perovskite / crystalline silicon stacked solar cell; the width of any first region (first silicon nitride layer 141) is 100 mm; the width of any second region (silicon oxide layer 142) is 100 mm.

[0075] Example 3

[0076] The perovskite / crystalline silicon tandem solar cell in Example 3 differs from the perovskite / crystalline silicon tandem solar cell in Example 1 only in that the second silicon nitride layer 8 in Example 3 includes only a first sub-silicon nitride layer 81, and the thickness of the first sub-silicon nitride layer 81 is 30 nm. (In Example 1, the second silicon nitride layer 8 includes a first sub-silicon nitride layer 81 and a second sub-silicon nitride layer 82 stacked in sequence; the first sub-silicon nitride layer 81 is closer to the second transparent conductive layer 9 than the second sub-silicon nitride layer 82; the thickness of the first sub-silicon nitride layer 81 is 20 nm; the thickness of the second sub-silicon nitride layer 82 is 10 nm; and the thickness of the second silicon nitride layer 8 is 30 nm).

[0077] Example 4

[0078] The perovskite / crystalline silicon tandem solar cell in Example 4 differs from the perovskite / crystalline silicon tandem solar cell in Example 1 only in that the second silicon nitride layer 8 is not included in Example 4, that is, the second silicon nitride layer 8 is not provided between the perovskite cell and the crystalline silicon cell.

[0079] Example 5

[0080] The perovskite / crystalline silicon tandem solar cell in Example 5 differs from the perovskite / crystalline silicon tandem solar cell in Example 1 only in that the thickness of the anti-reflection film 14 in Example 5 is 40 nm (the thickness of the anti-reflection film 14 in Example 1 is 50 nm).

[0081] Example 6

[0082] The perovskite / crystalline silicon tandem solar cell in Example 6 differs from the perovskite / crystalline silicon tandem solar cell in Example 1 only in that the thickness of the anti-reflection film 14 in Example 6 is 120 nm (the thickness of the anti-reflection film 14 in Example 1 is 50 nm).

[0083] Example 7

[0084] The perovskite / crystalline silicon tandem solar cell in Example 7 differs from the perovskite / crystalline silicon tandem solar cell in Example 1 only in that the width of any first region (first silicon nitride layer 141) in Example 7 is 40 mm, and the width of any second region (silicon oxide layer 142) is 40 mm. (In Example 1, the width of any first region (first silicon nitride layer 141) is 50 mm, and the width of any second region (silicon oxide layer 142) is 50 mm.)

[0085] Example 8

[0086] The perovskite / crystalline silicon tandem solar cell in Example 8 differs from the perovskite / crystalline silicon tandem solar cell in Example 1 only in that the width of any first region (first silicon nitride layer 141) in Example 8 is 120 mm, and the width of any second region (silicon oxide layer 142) is 120 mm. (The width of any first region (first silicon nitride layer 141) is 50 mm, and the width of any second region (silicon oxide layer 142) is 50 mm.)

[0087] Comparative Example 1

[0088] The perovskite / crystalline silicon tandem solar cell in Comparative Example 1 differs from the perovskite / crystalline silicon tandem solar cell in Example 4 only in that the anti-reflection film 14 in Comparative Example 1 is a silicon nitride film with a thickness of 50 nm. Figure 3 shown.

[0089] Comparative Example 2

[0090] The perovskite / crystalline silicon tandem solar cell in Comparative Example 2 is different from the perovskite / crystalline silicon tandem solar cell in Example 4 in that the anti-reflection film 14 in Comparative Example 2 is a silicon oxide film with a thickness of 50 nm. Figure 3 shown.

[0091] The perovskite / crystalline silicon tandem solar cell prepared in the above embodiment was subjected to photoelectric testing, and the performance test results are shown in Table 1 below.

[0092] Table 1 Device performance data

[0093]

[0094] As can be seen from the above test data, the first silicon nitride layer 141 and silicon oxide layer 142 that make up the anti-reflection film 14 have different refractive indices and reflectivities, which can optimize light absorption and reduce reflection losses. Compared with a single-layer anti-reflection film made of a single material, it can significantly reduce the reflection loss of light on the surface of the solar cell, thereby improving the photoelectric conversion efficiency of the solar cell.

[0095] Referring to the test data of the above-mentioned embodiment 1 and embodiments 5-6, it can be seen that optimizing the thickness of the anti-reflection film 14 can achieve a better anti-reflection effect, reduce light reflection loss, and improve light absorption, thereby improving the photoelectric conversion efficiency of the solar cell.

[0096] Referring to the test data of the above-mentioned Example 1 and Examples 7-8, it can be seen that optimizing the arrangement of the first silicon nitride layer 141 and the silicon oxide layer 142 can further optimize light absorption and reduce reflection loss, thereby significantly reducing the reflection loss of light on the surface of the solar cell and improving the photoelectric conversion efficiency of the solar cell.

[0097] Referring to the detection data of the above-mentioned Examples 1 and 4, it can be seen that in the perovskite / crystalline silicon stacked solar cell, an anti-reflection film 14 as described above is provided on the light-receiving surface of the perovskite cell, and a second silicon nitride layer 8 is provided between the perovskite cell and the crystalline silicon cell. The second silicon nitride layer 8 can not only change the interface reflectivity and affect the propagation path of light in the cell, but also further optimize the absorption of light and reduce reflection loss, thereby reducing the reflection loss of light on the surface of the solar cell and improving the photoelectric conversion efficiency of the solar cell.

[0098] Referring to the test data of the above-mentioned Example 1 and Examples 3-4, it can be seen that optimizing the structure of the second silicon nitride layer 8 can further change the interface reflectivity and the propagation path of light in the cell, optimize light absorption, and reduce reflection loss, thereby reducing the reflection loss of light on the surface of the solar cell and improving the photoelectric conversion efficiency of the solar cell.

[0099] The present application may also provide a photovoltaic module, comprising: the aforementioned perovskite / crystalline silicon tandem solar cell. The photovoltaic module also possesses the advantages of the aforementioned perovskite / crystalline silicon tandem solar cell, which will not be described in detail here.

[0100] It should be noted that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. are only for the convenience of describing the present application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present application. The directional terms "inside" and "outside" refer to the inside and outside relative to the outline of the component itself. For example, if the device in the drawing is inverted, the device described as "above other devices or structures" or "on top of other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Therefore, the exemplary term "above..." can include both "above..." and "below..." orientations. The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used here will be interpreted accordingly.

[0101] It should also be noted that references to "one embodiment," "another embodiment," "an embodiment," etc., in this application refer to specific features, structures, or characteristics described in conjunction with that embodiment as included in at least one embodiment generally described in this application. The appearance of the same expression in multiple places in the specification does not necessarily refer to the same embodiment. Furthermore, when a specific feature, structure, or characteristic is described in conjunction with any embodiment, it is intended that such feature, structure, or characteristic, when implemented in conjunction with other embodiments, also fall within the scope of this application.

[0102] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0103] It should also be noted that the above are only preferred embodiments of the present application and do not limit the scope of patent protection of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the scope of patent protection of the present application.

Claims

1. An anti-reflection film, characterized in that: comprising first regions and second regions that are alternately distributed; The first region is a first silicon nitride layer; The second region is a silicon oxide layer; the edge end surfaces of the adjacent first silicon nitride layer and the silicon oxide layer are connected.

2. The anti-reflection film according to claim 1, characterized in that: The thickness of the anti-reflection film is 50-100 nm.

3. The anti-reflection film according to claim 1 or 2, characterized in that: The first areas and the second areas are arranged in an array.

4. The anti-reflection film according to claim 3, wherein The width of any of the first regions is 50-100 mm; And / or, the width of any one of the second regions is 50-100 mm.

5. A perovskite / crystalline silicon tandem solar cell, characterized in that: A perovskite cell and an anti-reflection film according to any one of claims 1 to 4; Wherein, the anti-reflection film is arranged on the light-receiving surface of the perovskite cell.

6. The perovskite / crystalline silicon tandem solar cell according to claim 5, characterized in that: It also includes a crystalline silicon cell; the perovskite cell and the crystalline silicon cell are stacked; A second silicon nitride layer is provided between the perovskite cell and the crystalline silicon cell.

7. The perovskite / crystalline silicon tandem solar cell according to claim 6, characterized in that: The second silicon nitride layer includes a first sub-silicon nitride layer and a second sub-silicon nitride layer, and the first sub-silicon nitride layer and the second sub-silicon nitride layer are stacked.

8. The perovskite / crystalline silicon tandem solar cell according to claim 7, characterized in that: The first silicon nitride sub-layer is closer to the perovskite cell than the second silicon nitride sub-layer; The thickness of the first silicon nitride layer is 20-30 nm; And / or, the thickness of the second silicon nitride sub-layer is 10-20 nm.

9. The perovskite / crystalline silicon tandem solar cell according to any one of claims 6 to 8, characterized in that: The perovskite / crystalline silicon stacked solar cell includes a first electrode, a first transparent conductive layer, an N-type doped amorphous silicon layer, a first intrinsic amorphous silicon layer, an N-type crystalline silicon layer, a second intrinsic amorphous silicon layer, a P-type doped amorphous silicon layer, a second silicon nitride layer, a second transparent conductive layer, a hole transport layer, a perovskite layer, an electron transport layer, a third transparent conductive layer, the anti-reflection film, and a second electrode, which are stacked in sequence.

10. A photovoltaic module, characterized in that: include: The perovskite / crystalline silicon tandem solar cell according to any one of claims 5 to 9.

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