Laminated solar cell, photovoltaic module, power utilization device and power generation device

Abstract

The utility model provides a laminated solar cell, a photovoltaic module, a power utilization device and a power generation device.The laminated solar cell comprises a top cell and a bottom cell which are arranged in a laminated mode in the first direction, and the top cell comprises a first electrode, a first light absorption layer and a second electrode which are sequentially arranged in a laminated mode in the first direction; the bottom cell comprises a third electrode, a second light absorption layer, a composite layer, a third light absorption layer and a fourth electrode which are sequentially stacked in the first direction, and band gaps of the first light absorption layer, the second light absorption layer and the third light absorption layer are sequentially reduced. According to the laminated solar cell, thermal relaxation of the solar cell can be reduced, photoelectric utilization efficiency of the solar cell is improved, and preparation of a composite layer can be reduced.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a stacked solar cell, a photovoltaic module, an electrical device, and a power generation device. Background Art

[0002] Solar cells are devices that directly convert light energy into electrical energy through the photoelectric or photochemical effect. Perovskite cells and crystalline silicon cells can be stacked to form a two-junction solar tandem cell. However, the preparation of the composite layer between the perovskite cell unit and the crystalline silicon cell unit in a two-junction solar tandem cell is one of the current difficulties in the industry. How to reduce the preparation of the composite layer while improving the photovoltaic efficiency of solar cells is a technical problem that needs to be solved urgently. Utility Model Content

[0003] The present application provides a stacked solar cell, a photovoltaic module, an electrical device and a power generation device. The stacked solar cell can reduce thermal relaxation of the solar cell, increase the photoelectric utilization efficiency of the solar cell, and reduce the preparation of the composite layer.

[0004] In a first aspect of the present application, a stacked solar cell is provided, comprising a top cell and a bottom cell stacked along a first direction, the top cell comprising a first electrode, a first light absorbing layer, and a second electrode stacked in sequence along the first direction, the bottom cell comprising a third electrode, a second light absorbing layer, a composite layer, a third light absorbing layer, and a fourth electrode stacked in sequence along the first direction, wherein the band gaps of the first light absorbing layer, the second light absorbing layer, and the third light absorbing layer decrease in sequence.

[0005] In the above-mentioned tandem solar cell, the design of the first light-absorbing layer, the second light-absorbing layer, the third light-absorbing layer and their band gaps can achieve a three-stage combination of wide band gap, medium band gap and narrow band gap, so that sunlight can be incident from the top cell and pass through the first light-absorbing layer, the second light-absorbing layer and the third light-absorbing layer in sequence. This can increase the solar cell's absorption of sunlight of different frequency wavelengths, reduce solar cell thermal relaxation, and improve the solar cell's photovoltaic efficiency. At the same time, it reduces the preparation of the composite layer between the top cell and the bottom cell, so that the solar cell can achieve an improvement in the photovoltaic efficiency of the solar cell without increasing the packaging cost. The design of the first electrode, the second electrode, the third electrode and the fourth electrode in the above-mentioned tandem solar cell makes the solar cell easy to prepare and implement, and therefore has a better commercial prospect.

[0006] In some embodiments, the first light-absorbing layer comprises a first perovskite material, the second light-absorbing layer comprises a second perovskite material, and the third light-absorbing layer comprises a silicon-based material. The band gaps of the first perovskite material, the second perovskite material, and the silicon-based material decrease in order. The band gaps of the first perovskite material, the second perovskite material, and the silicon-based material can be adjusted within the aforementioned corresponding ranges, further improving the absorption of sunlight of different frequency wavelengths by the tandem solar cell, thereby further enhancing the solar cell's absorption and conversion efficiency.

[0007] In some embodiments, the band gap of the first light absorbing layer is 1.68 eV to 2.2 eV; and / or,

[0008] The band gap of the second light absorbing layer is 1.35 eV to 1.68 eV; and / or,

[0009] The band gap of the third light absorbing layer is 0.5 eV to 1.35 eV.

[0010] The band gap of the first light absorbing layer, the band gap of the second light absorbing layer, and the band gap of the third light absorbing layer can be adjusted within the above corresponding ranges, respectively, to further improve the absorption of sunlight of different frequency wavelengths by the stacked solar cell, thereby further improving the absorption and conversion efficiency of the solar cell to sunlight.

[0011] In some embodiments, the bottom cell includes multiple sub-cells connected in series, each of which is formed by trenches separating the stacked third electrode, second light-absorbing layer, composite layer, third light-absorbing layer, and fourth electrode. This design can fully utilize sunlight of different frequencies and wavelengths, further improving the efficiency of solar photovoltaic utilization.

[0012] In some embodiments, the top cell further comprises at least one of a first transmission layer and a second transmission layer, the first transmission layer being disposed between the first electrode and the first light absorbing layer, and the second transmission layer being disposed between the first light absorbing layer and the second electrode;

[0013] Among them, one of the first transport layer and the second transport layer is an electron transport layer, and the other is a hole transport layer.

[0014] In some embodiments, the bottom cell further includes at least one of a third transmission layer and a fourth transmission layer, wherein the third transmission layer is disposed between the third electrode and the second light absorbing layer, and the fourth transmission layer is disposed between the second light absorbing layer and the composite layer;

[0015] Among them, one of the third transport layer and the fourth transport layer is an electron transport layer, and the other is a hole transport layer.

[0016] In some embodiments, the third light absorbing layer is a crystalline silicon layer.

[0017] In some embodiments, the bottom cell further includes an n-type amorphous silicon layer and a p-type amorphous silicon layer, one of the n-type amorphous silicon layer and the p-type amorphous silicon layer is disposed between the third light absorption layer and the composite layer, and the other is disposed between the third light absorption layer and the fourth electrode.

[0018] In some embodiments, the stacked solar cell further includes a first positive electrode and a first negative electrode, wherein one of the first positive electrode and the first negative electrode is connected to the first electrode, and the other is connected to the second electrode.

[0019] In some embodiments, the stacked solar cell further includes a second positive electrode and a second negative electrode, one of the second positive electrode and the second negative electrode is connected to the third electrode, and the other is connected to the fourth electrode.

[0020] In some embodiments, along the first direction, the third electrode and the fourth electrode are respectively disposed on two sides of the bottom cell.

[0021] In some embodiments, the tandem solar cell further includes a first adhesive film disposed between the top cell and the bottom cell. The first adhesive film securely bonds the top cell and the bottom cell together, acts as a buffer, mitigates mechanical stress damage to the top and bottom cells, and prevents short circuits between the top and bottom cells.

[0022] In some embodiments, the tandem solar cell further comprises a second adhesive film disposed on a surface of the bottom cell away from the top cell. The second adhesive film can act as a buffer to reduce damage to the bottom cell caused by mechanical stress.

[0023] In some embodiments, the tandem solar cell further comprises a panel, wherein the panel is a glass panel;

[0024] The panel is arranged on the surface of the second adhesive film away from the top cell; and / or,

[0025] The panel is arranged on a surface of the first electrode away from the bottom cell.

[0026] The second adhesive film can firmly bond the panel and the bottom battery together, and at the same time can play a buffering role to reduce the damage of mechanical stress to the bottom battery.

[0027] A second aspect of the present application provides a photovoltaic module comprising the stacked solar cell described in the first aspect of the present application.

[0028] The above-mentioned photovoltaic module includes the tandem solar cell provided by the present application, and thus has at least the same advantages as the tandem solar cell.

[0029] The second aspect of the present application provides an electrical device comprising the stacked solar cell described in the first aspect of the present application.

[0030] The above-mentioned electrical device includes the tandem solar cell provided by the present application, and thus has at least the same advantages as the tandem solar cell.

[0031] The third aspect of the present application provides a power generation device comprising the stacked solar cell described in the first aspect of the present application.

[0032] The above-mentioned power generation device includes the tandem solar cell provided by the present application, and thus has at least the same advantages as the tandem solar cell.

[0033] The details of one or more embodiments of the present application are set forth in the following drawings and description. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to better describe and illustrate the embodiments or examples of the applications disclosed herein, reference may be made to one or more of the accompanying drawings. The additional details or examples used to describe the accompanying drawings should not be considered to limit the scope of the disclosed applications, the embodiments or examples currently described, and any of the best modes currently understood for these applications. Moreover, the same reference numerals are used throughout the drawings to represent the same components. In the drawings:

[0035] Figure 1 FIG. 1 is a schematic structural diagram of a stacked solar cell according to an embodiment of the present application.

[0036] Figure 2 FIG. 1 is a schematic structural diagram of a stacked solar cell according to another embodiment of the present application.

[0037] Figure 3 FIG. 1 is a schematic diagram of an electrical device using a tandem solar cell as a power source according to an embodiment of the present application.

[0038] Explanation of reference numerals: 100, stacked solar cell; 1, top cell; 2, first adhesive film; 3, bottom cell; 4, second adhesive film; 5, panel; 10, first perovskite cell unit; 11, first electrode; 12, first transmission layer; 13, first light absorption layer; 14, second transmission layer; 15, first buffer layer; 16, second electrode; 17, first positive electrode; 18, first negative electrode; 31, second perovskite cell unit; 32, composite layer; 33, silicon-based Battery cell; 34, second negative electrode; 35, second positive electrode; 311, third electrode; 312, second buffer layer; 313, third transmission layer; 314, second light absorption layer; 315, fourth transmission layer; 331, n-type amorphous silicon layer; 332, first intrinsic amorphous silicon layer; 333, third light absorption layer; 334, second intrinsic amorphous silicon layer; 335, p-type amorphous silicon layer; 336, transparent conductive layer; 337, fourth electrode; 200, electrical device. DETAILED DESCRIPTION

[0039] Below, some embodiments of the perovskite precursor solution, perovskite film, perovskite battery and electrical device of the present application are disclosed in detail with appropriate reference to the accompanying drawings. However, there may be cases where unnecessary detailed descriptions are omitted. For example, there are cases where detailed descriptions of well-known matters and repeated descriptions of actually the same structures are omitted. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate understanding by those skilled in the art. In addition, the drawings and the following description are provided for those skilled in the art to fully understand the present application and are not intended to limit the subject matter described in the claims.

[0040] " range " disclosed in the present application is limited in the form of lower limit and upper limit, and given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of special range. The scope limited in this way can be to include end value or not include end value, and can be arbitrarily combined, that is, any lower limit can form a range with any upper limit combination. For example, if the scope of 60-120 and 80-110 is listed for specific parameters, it is understood that the scope of 60-110 and 80-120 is also expected. In addition, if the minimum range value 1 and 2 are listed, and if the maximum range value 3,4 and 5 are listed, then the following range can all be expected: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In this application, unless otherwise specified, the numerical range " ab " represents the abbreviation of any real number combination between a and b, wherein a and b are all real numbers. For example, a numerical range of "0-5" indicates that all real numbers between "0-5" are listed herein, and "0-5" is merely an abbreviation for a combination of these values. Furthermore, when a parameter is expressed as an integer ≥ 2, this is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc. For example, when a parameter is expressed as an integer selected from "2-10", this is equivalent to listing the integers 2, 3, 4, 5, 6, 7, 8, 9, and 10.

[0041] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0042] Unless otherwise specified, all steps of the present application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), indicating that step (c) may be added to the method in any order, for example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0043] In this application, unless otherwise specified, A (such as B) means that B is a non-limiting example of A, and it can be understood that A is not limited to B.

[0044] In this application, "a plurality of" or "a plurality of" refers to a number greater than or equal to 2 unless otherwise specified. For example, "one or more" means one or more than or equal to two.

[0045] In this application, the terms "first," "second," "third," "fourth," etc. in "the first aspect," "the second aspect," "the third aspect," "the fourth aspect," etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or quantity, nor should they be understood as implicitly indicating the importance or quantity of the indicated technical features. Furthermore, "first," "second," "third," "fourth," etc. serve only as non-exhaustive enumeration and description, and should be understood not to constitute a closed-ended limitation on quantity.

[0046] Single-junction solar cells include a single bandgap light-absorbing layer that can only absorb sunlight with a wavelength less than or equal to the corresponding bandgap. However, wavelengths that are too small can cause thermal relaxation, reducing the photovoltaic efficiency. Using segmented absorption in a two-junction solar tandem cell can improve the photovoltaic efficiency of solar cells to a certain extent. In a two-junction solar tandem cell, a composite layer is typically provided between the perovskite cell and the crystalline silicon cell. The composite layer is used to connect the perovskite cell and the crystalline silicon cell in series. The material of the composite layer may include a transparent conductive oxide, such as one or more of FTO (fluorine-doped tin oxide), ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), IZO (indium zinc oxide), and ATO (antimony tin oxide). However, the preparation of the composite layer is one of the difficulties in the current industry. How to improve the photovoltaic efficiency of solar cells while reducing the preparation of the composite layer is a technical problem that needs to be solved urgently.

[0047] See also Figure 1 or Figure 2 An embodiment of the present application provides a stacked solar cell 100, which includes a top cell 1 and a bottom cell 3 stacked along a first direction Z. The top cell 1 includes a first electrode 11, a first light absorption layer 13, and a second electrode 16 stacked in sequence along the first direction Z. The bottom cell 3 includes a third electrode 311, a second light absorption layer 314, a composite layer 32, a third light absorption layer 333, and a fourth electrode 337 stacked in sequence along the first direction Z. The band gaps of the first light absorption layer 13, the second light absorption layer 314, and the third light absorption layer 333 decrease in sequence.

[0048] It is understandable that the first direction Z refers to the direction from the top cell 1 to the bottom cell 3. Further, the first direction Z refers to the direction in the thickness direction of the tandem solar cell 100 and from the top cell 1 to the bottom cell 3.

[0049] In the aforementioned tandem solar cell 100, the design of the first light-absorbing layer 13, the second light-absorbing layer 314, and the third light-absorbing layer 333 and their band gaps enables a three-stage combination of wide band gap, medium band gap, and narrow band gap. This allows sunlight to enter from the top cell 1 and pass through the first light-absorbing layer 13, the second light-absorbing layer 314, and the third light-absorbing layer 333 in sequence. This increases the solar cell's absorption of sunlight of different frequency wavelengths, reduces thermal relaxation in the solar cell, and improves the solar cell's photovoltaic efficiency. This also reduces the need for the preparation of a composite layer between the top cell 1 and the bottom cell 3, allowing the solar cell to achieve improved photovoltaic efficiency without increasing packaging costs. The design of the first electrode 11, the second electrode 16, the third electrode 311, and the fourth electrode 337 in the aforementioned tandem solar cell 100 makes the solar cell easy to manufacture and implement, thus offering a promising commercial prospect.

[0050] In some embodiments, the first light absorbing layer 13 includes a first perovskite material, the second light absorbing layer 314 includes a second perovskite material, and the third light absorbing layer 333 includes a silicon-based material. The band gaps of the first perovskite material, the second perovskite material, and the silicon-based material decrease in order. The band gaps of the first perovskite material, the second perovskite material, and the silicon-based material can be adjusted separately to further improve the absorption of sunlight of different frequency wavelengths by the tandem solar cell 100, thereby further improving the solar cell's absorption and conversion efficiency of sunlight.

[0051] Furthermore, the band gap of the first perovskite material is 1.68 eV to 2.2 eV. Accordingly, the band gap of the formed first light absorption layer 13 is also 1.68 eV to 2.2 eV. By way of example, the band gap of the first perovskite material or the first light absorption layer 13 includes, but is not limited to, 1.68 eV, 1.7 eV, 1.8 eV, 1.9 eV, 2 eV, 2.1 eV, 2.2 eV, or a range between any two of the foregoing.

[0052] Furthermore, the band gap of the second perovskite material is 1.35 eV to 1.68 eV. Accordingly, the band gap of the formed second light absorption layer 314 is also 1.35 eV to 1.68 eV. By way of example, the band gap of the second perovskite material or the second light absorption layer 314 includes, but is not limited to, 1.35 eV, 1.4 eV, 1.5 eV, 1.6 eV, 1.68 eV, or a range between any two of the foregoing.

[0053] Furthermore, the band gap of the silicon-based material is 0.5 eV to 1.35 eV. Accordingly, the band gap of the third light absorption layer 333 is also 0.5 eV to 1.35 eV. By way of example, the band gap of the silicon-based material or the third light absorption layer 333 includes, but is not limited to, 0.5 eV, 0.6 eV, 0.7 eV, 0.8 eV, 0.9 eV, 1 eV, 1.1 eV, 1.2 eV, 1.3 eV, 1.35 eV, or a range between any two of the foregoing.

[0054] The band gap of the first perovskite material or the first light absorption layer 13, the band gap of the second perovskite material or the second light absorption layer 314, and the band gap of the silicon-based material or the third light absorption layer 333 can be adjusted within the above-mentioned corresponding ranges, respectively, to further improve the absorption of sunlight of different frequency wavelengths by the stacked solar cell 100, thereby further improving the absorption and conversion efficiency of the solar cell to sunlight.

[0055] Furthermore, the first perovskite material and the second perovskite material each independently include a perovskite-type metal halide; the chemical formula of the perovskite-type metal halide is ABX'3; wherein A is a monovalent cation, B is a divalent cation, and X' is a monovalent anion.

[0056] Furthermore, A includes Cs + , K + , Rb + , one or more of monovalent amine cations and monovalent amidino cations. Non-limiting examples of monovalent amine cations include CH3NH3 + (Methylamine, MA + ), ammonium (NH4 + ). Non-limiting examples of monovalent amidinium cations include NH2CH=NH2 + (Formamidine, can be written as FA + ).

[0057] Furthermore, B includes Pb 2+ 、Sn 2+ 、Fe 2+ 、Mn 2+ 、Ni 2+ 、Ge 2+ 、Co 2+ and Sb 2+ One or more of .

[0058] Further, X' includes I - Br - and Cl - One or more of .

[0059] In some embodiments, the bottom cell 3 includes multiple sub-cells connected in series. These sub-cells are formed by a stacked arrangement of a third electrode 311, a second light-absorbing layer 314, a composite layer 32, a third light-absorbing layer 333, and a fourth electrode 337, separated by a trench. In other words, each sub-cell includes a stacked arrangement of a third electrode 311, a second light-absorbing layer 314, a composite layer 32, a third light-absorbing layer 333, and a fourth electrode 337. This design can fully utilize sunlight of different frequencies and wavelengths, further improving solar photovoltaic efficiency. The number of sub-cells in the bottom cell 3 can be determined based on the area of ​​the top cell 1 perpendicular to the first direction Z. The number of sub-cells can be n, where n ≥ 2.

[0060] The structure of the channel may be a structure known in the art. Generally, the channel includes a first channel, a second channel, and a third channel.

[0061] As an example, the first trench divides the third electrode 311 along the thickness direction of the stacked solar cell 100 , so that the two third electrodes 311 of two adjacent sub-cells in the X direction are not connected to each other.

[0062] As an example, the second trench divides the second light absorbing layer 314, the composite layer 32, and the third light absorbing layer 333 along the thickness direction of the stacked solar cell 100. The second trench is filled with the material of the fourth electrode 337 or other conductive material to connect the third electrode 311 and the fourth electrode 337 of adjacent sub-cells in the X direction, thereby realizing the series connection of adjacent sub-cells in the X direction.

[0063] As an example, the third trench divides the fourth electrode 337 along the thickness direction of the stacked solar cell 100 , so that the two fourth electrodes 337 of two adjacent sub-cells in the X direction are not connected to each other.

[0064] In this way, the sub-cells in the solar cell can be divided and connected through the channels, forming a plurality of sub-cells connected in series in the X direction.

[0065] See also Figure 1 , the top cell 1 further includes at least one of a first transmission layer 12 and a second transmission layer 14 , the first transmission layer 12 is disposed between the first electrode 11 and the first light absorbing layer 13 , and the second transmission layer 14 is disposed between the first light absorbing layer 13 and the second electrode 16 ;

[0066] Among them, one of the first transport layer 12 and the second transport layer 14 is an electron transport layer, and the other is a hole transport layer.

[0067] As a non-limiting example, the top cell 1 may further include a first transmission layer 12, which is disposed between the first electrode 11 and the first light absorbing layer 13; or the top cell 1 may further include a second transmission layer 14, which is disposed between the first light absorbing layer 13 and the second electrode 16; or the top cell 1 may further include a first transmission layer 12 and a second transmission layer 14, which are disposed between the first electrode 11 and the first light absorbing layer 13, and the second transmission layer 14 are disposed between the first light absorbing layer 13 and the second electrode 16.

[0068] In some embodiments, the first transport layer 12 is an electron transport layer. In other embodiments, the first transport layer 12 is a hole transport layer.

[0069] Furthermore, the first transmission layer 12 is provided between the first electrode 11 and the first light absorption layer 13 , and the second transmission layer 14 is provided between the first light absorption layer 13 and the second electrode 16 ;

[0070] The first transport layer 12 is a hole transport layer, and the second transport layer 14 is an electron transport layer.

[0071] When the top cell 1 in the stacked solar cell 100 is operating, after the first light-absorbing layer 13 is exposed to light, the electrons within it gain energy and break free from the constraints of the first light-absorbing layer 13, forming negatively charged electron carriers and positively charged hole carriers, thereby generating electron-hole pairs. The free electrons and free holes are then transferred in opposite directions through the corresponding transport layers, causing the electrons and holes to flow, forming an external current and achieving the conversion of light energy into electrical energy. Furthermore, after the first light-absorbing layer 13 absorbs photons, it is stimulated to generate electron-hole pairs. The electron-hole pairs further dissociate to form free carriers with opposite charges. The free electrons are transferred to the positive electrode through the electron transport layer, and the free holes are transferred to the negative electrode through the hole transport layer. The two free carriers are collected by the corresponding electrodes, further forming a photocurrent in the circuit of the top cell 1.

[0072] The electron transport layer can extract and transport electron carriers and block the passage of free holes.

[0073] The hole transport layer can extract and transport hole carriers and block the passage of free electrons.

[0074] It can be understood that one of the first electrode 11 and the second electrode 16 of the top battery 1 serves as a positive electrode to collect electron carriers transmitted via the electron transport layer, and the other serves as a negative electrode to collect hole carriers transmitted via the hole transport layer.

[0075] Furthermore, the electron transport layer material may include but is not limited to one or more of the following materials and their derivatives: imide compounds, quinone compounds, fullerenes and their derivatives, methoxytriphenylamine-fluoroformamidine (OMeTPA-FA), calcium titanate (CaTiO3), lithium fluoride (LiF), calcium fluoride (CaF2), poly (3,4-ethylenedioxythiophene): polystyrene sulfonic acid (PEDOT:PSS), poly 3-hexylthiophene (P3HT), triphenylamine with triptycene as the core (H101), 3,4-ethyl ... Ethylenedioxythiophene-methoxytriphenylamine (EDOT-OMeTPA), N-(4-phenylamino)carbazole-spirobifluorene (CzPAF-SBF), polythiophene, metal oxides, silicon oxide (SiO2), strontium titanate (SrTiO3), cuprous thiocyanate (CuSCN), etc.; wherein the metal element may include one or more of Mg, Ni, Cd, Zn, In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga and Cr.

[0076] Furthermore, the hole transport layer may include but is not limited to one or more of the following materials and their derivatives: 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), polytriarylamine (PTAA), nickel oxide (NiO x ), poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT:PSS), WO3 and other materials can transport holes and block electrons. Optionally, nickel oxide NiO x The Ni in can be Ni 2+ and Ni 3+ At least one of .

[0077] In some embodiments, the first electrode 11 is a transparent electrode.

[0078] In some embodiments, the top cell 1 may also incorporate other functional layers, such as a buffer layer, as needed. In some embodiments, the top cell 1 may be provided with a buffer layer having an appropriate energy level, which may play one or more of the following roles: reducing energy barriers, promoting energy level matching, improving carrier extraction efficiency, passivating interface defect states, protecting the light absorption layer, inhibiting the oxidative decomposition of water molecules and oxygen in the cell, improving photoelectric conversion efficiency, and improving the stability of the top cell 1. Depending on the location of the buffer layer, the type of buffer layer may include at least one of a buffer layer between the first transport layer 12 and the first electrode 11, a buffer layer between the second transport layer 14 and the second electrode 16, a buffer layer between the first transport layer 12 and the first light absorption layer 13, and a buffer layer between the second transport layer 14 and the first light absorption layer 13. Materials that can be used for the buffer layer may include, but are not limited to: at least one of V2O5, MoO3, Ag, Au, Cu, SnO2, ZnO, TiO2, Al2O3, SiO2, Si3N4, PMMA (polymethyl methacrylate), BCP (bathocuproine), PEIE (polyethyleneimine ethoxylate), microcrystalline silicon and amorphous silicon.

[0079] Furthermore, the top cell 1 further includes a first buffer layer 15 , which is disposed between the second transmission layer 14 and the second electrode 16 .

[0080] In some embodiments, the top cell 1 includes a first perovskite cell unit 10, and the first perovskite cell unit 10 includes a first light absorption layer 13. Furthermore, the first perovskite cell unit 10 also includes a first electrode 11, a first transmission layer 12, a second transmission layer 14, a first buffer layer 15, and a second electrode 16. The first electrode 11, the first transmission layer 12, the first light absorption layer 13, the second transmission layer 14, the first buffer layer 15, and the second electrode 16 are stacked in sequence along the first direction Z.

[0081] It is understandable that the number of the first perovskite battery unit 10 may be one or more.

[0082] See also Figure 1 The bottom cell 3 further includes at least one of a third transmission layer 313 and a fourth transmission layer 315 , wherein the third transmission layer 313 is disposed between the third electrode 311 and the second light absorption layer 314 , and the fourth transmission layer 315 is disposed between the second light absorption layer 314 and the composite layer 32 ;

[0083] Among them, one of the third transport layer 313 and the fourth transport layer 315 is an electron transport layer, and the other is a hole transport layer.

[0084] Further, the bottom cell 3 further comprises a third transport layer 313 and a fourth transport layer 315, the third transport layer 313 is arranged between the third electrode 311 and a second light-absorbing layer 314, and the fourth transport layer 315 is arranged between the second light-absorbing layer 314 and the composite layer 32.

[0085] In the embodiment, the third transport layer 313 is an electron transport layer, and the fourth transport layer 315 is a hole transport layer.

[0086] The bottom cell 3 in the stacked solar cell 100 works in a similar principle as the top cell 1, and thus forms a photoelectric current in the circuit of the bottom cell 3.

[0087] In some embodiments, the bottom cell 3 can further introduce other functional layers, such as a buffer layer, according to requirements. In some embodiments, the bottom cell 3 can be provided with a buffer layer with a suitable energy level, which can play one or more of the following roles: reducing the energy level barrier, promoting energy level matching, improving carrier extraction efficiency, and at the same time, passivating interface defect states, protecting the light-absorbing layer, inhibiting water molecules and oxygen from oxidizing and decomposing the cell, improving photoelectric conversion efficiency, and improving the stability of the bottom cell 3. According to the different positions of the buffer layer, the types of the buffer layer can include at least one of a buffer layer between the third transport layer 313 and the third electrode 311, a buffer layer between the fourth transport layer 315 and the composite layer 32, a buffer layer between the third transport layer 313 and the third light-absorbing layer 333, and a buffer layer between the fourth transport layer 315 and the third light-absorbing layer 333. The materials that can be used for the buffer layer can include, but are not limited to, Cu2O, NiO, AZO, TiO2, and the like.

[0088] Further, the bottom cell 3 further comprises a second buffer layer 312, which is arranged between the third electrode 311 and the third transport layer 313.

[0089] In some embodiments, the third light-absorbing layer 333 is a crystalline silicon layer. Since the areas of the top cell 1 and the bottom cell 3 are usually equal, if the cross section of the third light-absorbing layer 333 (crystalline silicon layer) in the first direction Z has a smaller area, and the cross section of the first light-absorbing layer 13 in the first direction Z has a larger area, the bottom cell 3 is usually designed as a plurality of sub-cells connected in series, so as to make full use of sunlight.

[0090] Please refer to Figure 1The bottom cell 3 further includes an n-type amorphous silicon layer 331 and a p-type amorphous silicon layer 335. One of the n-type amorphous silicon layer 331 and the p-type amorphous silicon layer 335 is disposed between the third light absorbing layer 333 and the composite layer 32, and the other is disposed between the third light absorbing layer 333 and the fourth electrode 337. As an example, the n-type amorphous silicon layer 331 is disposed between the third light absorbing layer 333 and the composite layer 32, and the p-type amorphous silicon layer 335 is disposed between the third light absorbing layer 333 and the fourth electrode 337; or the p-type amorphous silicon layer 335 is disposed between the third light absorbing layer 333 and the composite layer 32, and the n-type amorphous silicon layer 331 is disposed between the third light absorbing layer 333 and the fourth electrode 337.

[0091] Furthermore, the n-type amorphous silicon layer 331 is disposed between the third light absorption layer 333 and the composite layer 32 , and the p-type amorphous silicon layer 335 is disposed between the third light absorption layer 333 and the fourth electrode 337 .

[0092] In some embodiments, the bottom cell 3 further includes at least one of a first intrinsic amorphous silicon layer 332 and a second intrinsic amorphous silicon layer 334. The first intrinsic amorphous silicon layer 332 and the second intrinsic amorphous silicon layer 334 are disposed on a surface of the third light absorption layer 333 along the first direction Z. As a non-limiting example, the first intrinsic amorphous silicon layer 332 may be disposed between the third light absorption layer 333 and the composite layer 32. Furthermore, the first intrinsic amorphous silicon layer 332 may be disposed between the third light absorption layer 333 and the n-type amorphous silicon layer 331. The second intrinsic amorphous silicon layer 334 may be disposed between the third light absorption layer 333 and the fourth electrode 337. Furthermore, the second intrinsic amorphous silicon layer 334 may be disposed between the third light absorption layer 333 and the p-type amorphous silicon layer 335.

[0093] Furthermore, the bottom cell 3 further includes a first intrinsic amorphous silicon layer 332 and a second intrinsic amorphous silicon layer 334 . The first intrinsic amorphous silicon layer 332 is disposed between the n-type amorphous silicon layer 331 and the third light absorption layer 333 , and the second intrinsic amorphous silicon layer 334 is disposed between the third light absorption layer 333 and the p-type amorphous silicon layer 335 .

[0094] In some embodiments, the bottom cell 3 further includes a transparent conductive layer 336 . The transparent conductive layer 336 is disposed between the p-type amorphous silicon layer 335 and the fourth electrode 337 .

[0095] In some embodiments, the bottom cell 3 includes a second perovskite cell 31 and a silicon-based cell 33 .

[0096] In some embodiments, the second perovskite cell unit 31 includes a second light absorption layer 314. Furthermore, the second perovskite cell unit 31 also includes a third electrode 311, a second buffer layer 312, a third transmission layer 313, and a fourth transmission layer 315. The third electrode 311, the second buffer layer 312, the third transmission layer 313, the second light absorption layer 314, and the fourth transmission layer 315 are stacked in sequence along the first direction Z.

[0097] It is understandable that the number of the second perovskite battery unit 31 may be one or more.

[0098] In some embodiments, the silicon-based battery cell 33 includes a third light absorption layer 333. Furthermore, the silicon-based battery cell 33 also includes an n-type amorphous silicon layer 331, a first intrinsic amorphous silicon layer 332, a second intrinsic amorphous silicon layer 334, a p-type amorphous silicon layer 335, a transparent conductive layer 336, and a fourth electrode 337. The n-type amorphous silicon layer 331, the first intrinsic amorphous silicon layer 332, the third light absorption layer 333, the second intrinsic amorphous silicon layer 334, the p-type amorphous silicon layer 335, the transparent conductive layer 336, and the fourth electrode 337 are stacked in sequence along the first direction Z.

[0099] See also Figure 1 The stacked solar cell 100 further includes a first positive electrode 17 and a first negative electrode 18 , one of the first positive electrode 17 and the first negative electrode 18 is connected to the first electrode 11 , and the other is connected to the second electrode 16 .

[0100] In some embodiments, the stacked solar cell 100 further includes a second positive electrode 35 and a second negative electrode 34 , one of the second positive electrode 35 and the second negative electrode 34 is connected to the third electrode 311 , and the other is connected to the fourth electrode 337 .

[0101] In some embodiments, along the first direction Z, the third electrode 311 and the fourth electrode 337 are respectively disposed on two sides of the bottom cell 3 .

[0102] In some embodiments, the tandem solar cell 100 further includes a first adhesive film 2, which is disposed between the top cell 1 and the bottom cell 3. The first adhesive film 2 can firmly bond the top cell 1 and the bottom cell 3 together, and can also act as a buffer to reduce damage to the top cell 1 and the bottom cell 3 caused by mechanical stress, and can prevent the top cell 1 and the bottom cell 3 from short circuiting.

[0103] In some embodiments, the stacked solar cell 100 further includes a second adhesive film 4, which is disposed on the surface of the bottom cell 3 away from the top cell 1. The second adhesive film 4 can act as a buffer to reduce damage to the bottom cell 3 caused by mechanical stress.

[0104] In some embodiments, the tandem solar cell 100 further includes a panel 5, which is disposed on the surface of the second adhesive film 4 facing away from the top cell 1. Optionally, the panel 5 is a glass plate. The second adhesive film 4 securely bonds the panel 5 to the bottom cell 3 and also acts as a buffer, reducing damage to the bottom cell 3 from mechanical stress.

[0105] In some embodiments, the panel 5 is disposed on the surface of the first electrode 11 away from the bottom cell 3. Optionally, the panel 5 is a glass plate.

[0106] In some embodiments, the tandem solar cell 100 is a four-terminal tandem solar cell.

[0107] In some embodiments, a method for preparing a tandem solar cell includes the following steps:

[0108] (1) Texturing is performed on the surface of the silicon wafer to form a crystalline silicon layer;

[0109] (2) depositing a first intrinsic amorphous silicon layer, a second intrinsic amorphous silicon layer, a p-type amorphous silicon layer, and an n-type amorphous silicon layer on two surfaces in opposite directions of the crystalline silicon layer, so that the p-type amorphous silicon layer, the second intrinsic amorphous silicon layer, the crystalline silicon layer, the first intrinsic amorphous silicon layer, and the n-type amorphous silicon layer are stacked in sequence;

[0110] (3) preparing a transparent conductive layer on a surface of the p-type amorphous silicon layer away from the crystalline silicon layer;

[0111] (4) preparing a fourth electrode on a surface of the transparent conductive layer away from the p-type crystalline silicon layer;

[0112] (5) preparing a composite layer on a surface of the n-type amorphous silicon layer away from the crystalline silicon layer;

[0113] (6) preparing a second hole transport layer on the surface of the composite layer away from the n-type amorphous silicon layer;

[0114] (7) preparing a second light absorbing layer comprising a perovskite material on a surface of the second hole transport layer away from the n-type amorphous silicon layer;

[0115] (8) preparing a second electron transport layer on a surface of the second light absorbing layer away from the n-type amorphous silicon layer;

[0116] (9) preparing a second buffer layer on a surface of the second electron transport layer away from the n-type amorphous silicon layer;

[0117] (10) preparing a third electrode on the surface of the second buffer layer away from the n-type amorphous silicon layer to obtain a sub-cell;

[0118] (11) The sub-cells are connected in series to form a bottom cell by using a string welding technique;

[0119] (12) Prepare a glass plate cleaned with deionized water;

[0120] (13) applying a second adhesive film on the glass plate;

[0121] (14) placing the bottom battery on top of the second adhesive film to obtain a semi-finished battery;

[0122] (15) Preparing a first electrode;

[0123] (16) preparing a first hole transport layer on the first electrode;

[0124] (17) preparing a first light absorbing layer comprising a perovskite material on a surface of the first hole transport layer away from the first electrode;

[0125] (18) preparing a first electron transport layer on a surface of the first light absorbing layer away from the first electrode;

[0126] (19) preparing a first buffer layer on a surface of the first electron transport layer away from the first electrode;

[0127] (20) preparing a second electrode on the surface of the first buffer layer away from the first electrode to obtain a top cell;

[0128] (21) Leading out a first positive electrode and a first negative electrode from the top battery;

[0129] (22) placing a first adhesive film on the semi-finished battery obtained in step (14);

[0130] (23) placing a top battery on the first adhesive film to obtain a stack;

[0131] (24) The stacked parts are fed into a laminator for lamination to form a three-layer solar cell.

[0132] Furthermore, the steps of depositing a first intrinsic amorphous silicon layer, a second intrinsic amorphous silicon layer, a p-type amorphous silicon layer, and an n-type amorphous silicon layer on two surfaces in opposite directions of the crystalline silicon layer include: using PECVD (plasma enhanced chemical vapor deposition) to deposit the first intrinsic amorphous silicon layer, the second intrinsic amorphous silicon layer, the p-type amorphous silicon layer, and the n-type amorphous silicon layer.

[0133] Furthermore, the step of preparing a transparent conductive layer on the surface of the p-type amorphous silicon layer away from the crystalline silicon layer includes: preparing the transparent conductive layer by magnetron sputtering.

[0134] Furthermore, the step of preparing the composite layer on the surface of the n-type amorphous silicon layer away from the crystalline silicon layer includes: preparing the composite layer by at least one method selected from thermal growth, atomic deposition (ALD), magnetron sputtering, thermal evaporation and PECVD.

[0135] Furthermore, the step of preparing a second hole transport layer on the surface of the composite layer away from the n-type amorphous silicon layer includes: preparing the second hole transport layer by at least one method selected from spin coating, evaporation, sputtering, spraying, thermal spray decomposition, blade coating, printing and slit coating.

[0136] Furthermore, in the step of preparing a second light-absorbing layer comprising a perovskite material on a surface of the second hole transport layer away from the n-type amorphous silicon layer, the step includes: preparing the second light-absorbing layer comprising a perovskite material by at least one method selected from spin coating, evaporation, sputtering, spraying, thermal spray decomposition, doctor blade coating, printing and slit coating.

[0137] Furthermore, the step of preparing a second electron transport layer on the surface of the second light absorbing layer away from the n-type amorphous silicon layer includes: preparing the second electron transport layer by at least one method selected from spin coating, evaporation, sputtering, spraying, thermal spray decomposition, blade coating, printing and slit coating.

[0138] Furthermore, the second buffer layer contains at least one of V2O5, MoO3, Ag, Au, Cu, SnO2, ZnO, TiO2, Al2O3, SiO2, Si3N4, PMMA (polymethyl methacrylate), BCP (bathocuproin), PEIE (polyethyleneimine ethoxylate), microcrystalline silicon and amorphous silicon.

[0139] Furthermore, the step of forming a second buffer layer on a surface of the second electron transport layer remote from the n-type amorphous silicon layer includes depositing a buffer material to form the second buffer layer using at least one of sputtering, atomic deposition, and evaporation. As non-limiting examples, the buffer material includes, but is not limited to, at least one of V2O5, MoO3, Ag, Au, Cu, SnO2, ZnO, TiO2, Al2O3, SiO2, Si3N4, PMMA, BCP, PEIE microcrystalline silicon, and amorphous silicon.

[0140] Furthermore, the step of preparing the third electrode on the surface of the second buffer layer away from the n-type amorphous silicon layer includes: preparing the third electrode by at least one method selected from sputtering, atomic deposition and evaporation.

[0141] Furthermore, the step of preparing the first hole transport layer on the first electrode includes: preparing the first hole transport layer by at least one method selected from spin coating, evaporation, sputtering, spraying, thermal spray decomposition, blade coating, printing and slit coating.

[0142] Furthermore, the step of preparing a first light-absorbing layer comprising a perovskite material on a surface of the first hole transport layer away from the first electrode includes: preparing the first light-absorbing layer by at least one method selected from spin coating, evaporation, sputtering, spraying, thermal spray decomposition, blade coating, printing and slit coating.

[0143] Furthermore, the step of preparing the first electron transport layer on the surface of the first light absorbing layer away from the first electrode includes: preparing the first electron transport layer by at least one method selected from spin coating, evaporation, sputtering, spraying, thermal spray decomposition, blade coating, printing and slit coating.

[0144] Furthermore, the step of forming a first buffer layer on a surface of the first electron transport layer remote from the first electrode includes depositing a buffer material to form the first buffer layer by at least one of sputtering, atomic deposition, and evaporation. As non-limiting examples, the buffer material includes, but is not limited to, at least one of V2O5, MoO3, Ag, Au, Cu, SnO2, ZnO, TiO2, Al2O3, SiO2, Si3N4, PMMA, BCP, PEIE microcrystalline silicon, and amorphous silicon.

[0145] Furthermore, the step of preparing the second electrode on the surface of the first buffer layer away from the first electrode includes: preparing the second electrode by at least one method selected from sputtering, atomic deposition and evaporation.

[0146] Furthermore, the second electrode and the third electrode are each independently a transparent electrode.

[0147] Furthermore, the fourth electrode is a metal electrode.

[0148] Another embodiment of the present application provides a photovoltaic module, including the above-mentioned stacked solar cell of the present application.

[0149] The above-mentioned photovoltaic module includes one or more of the above-mentioned stacked solar cells, which can be selected according to the specific application scenario; further, the above-mentioned photovoltaic module includes multiple of the above-mentioned stacked solar cells, and the multiple above-mentioned stacked solar cells are connected in series or in parallel to form a battery cell.

[0150] In some embodiments, the photovoltaic module further includes a photovoltaic glass layer, a bonding layer, and a back sheet.

[0151] Adhesive layers are provided on both surfaces of the cell, a back plate is provided on the surface of one of the adhesive layers away from the cell, and a photovoltaic glass layer is provided on the surface of the other adhesive layer away from the cell.

[0152] The photovoltaic glass layer and back panel are used to protect the solar cells, and they have the functions of sealing, insulation and waterproofing; the bonding layer plays the role of bonding the photovoltaic glass layer to the battery cell, and bonding the back panel to the battery cell.

[0153] Without limitation, the photovoltaic glass layer may be made of tempered glass, the back panel may be made of TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the adhesive layer may be made of EVA (polyethylene-polyvinyl acetate copolymer).

[0154] Furthermore, the photovoltaic module further includes a junction box and an outer frame.

[0155] The junction box is used to protect the power generation system of the entire photovoltaic module. It is equivalent to a current transfer station. When a battery cell short-circuits, the junction box will automatically disconnect the short-circuited battery string.

[0156] The outer frame can support and protect the entire photovoltaic module. The frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0157] Furthermore, silicone is used to bond and seal the connection between the frame and other parts of the photovoltaic module. Photovoltaic modules can convert solar energy into electrical energy, which can be stored in batteries or used to drive loads.

[0158] In some embodiments, the photovoltaic component is a solar panel.

[0159] Yet another embodiment of the present application provides an electrical device, comprising the above-mentioned stacked solar cell of the present application.

[0160] In some embodiments, the tandem solar cell can be used as a power generation device for an electrical device. The type of power generation device can include, but is not limited to, an integrated power generation device. The location of the power generation device can include, but is not limited to, the roof or backplane of a vehicle.

[0161] Furthermore, the above-mentioned electrical devices may include mobile devices, such as mobile phones, laptop computers, etc., electric vehicles, electric trains, ships and satellites, power generation systems, etc., but are not limited thereto.

[0162] Figure 3 The power consumption device 200 is an automobile, and can further be a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle.

[0163] As another example, the electric device may be a mobile phone, a tablet computer, a laptop computer, a calculator, etc.

[0164] As another example, the power-consuming device may be a wearable device, such as a watch.

[0165] Another embodiment of the present application further provides a power generation device, comprising at least one of the above-mentioned stacked solar cell and the above-mentioned photovoltaic module.

[0166] Furthermore, the power generation device is a photovoltaic device.

[0167] The technical features of the above-described embodiments can be combined in any manner. For the sake of brevity, not all possible combinations of the technical features in the above-described embodiments are described, but it is understood that any combination of the technical features is within the scope of the present specification.

[0168] Note that the present application is not limited to the above-described embodiments. The above-described embodiments are merely examples, and embodiments having substantially the same configuration and exerting the same effects as the technical idea of the present application are included in the technical scope of the present application. The above-described embodiments merely express several embodiments of the present application, and the description is relatively detailed, but the present application is not construed as being limited to the embodiments. Furthermore, other modes constructed by applying various modifications to the embodiments or by combining part of the configurations of the embodiments, which can be conceived by those skilled in the art without departing from the spirit of the present application, are also included in the scope of the present application. It should be noted that several modifications and improvements can be made by those skilled in the art without departing from the concept of the present application, and these are included in the scope of the present application. Therefore, the scope of the present application should be determined by the appended claims, and the description and drawings are used to interpret the scope of the claims.

Claims

1. A stacked solar cell, characterized in that: The invention comprises a top cell and a bottom cell stacked along a first direction, wherein the top cell comprises a first electrode, a first light absorption layer, and a second electrode stacked in sequence along the first direction, and the bottom cell comprises a third electrode, a second light absorption layer, a composite layer, a third light absorption layer, and a fourth electrode stacked in sequence along the first direction, wherein the band gaps of the first light absorption layer, the second light absorption layer, and the third light absorption layer decrease in sequence.

2. The tandem solar cell according to claim 1, wherein The first light absorption layer includes a first perovskite material, the second light absorption layer includes a second perovskite material, and the third light absorption layer includes a silicon-based material. The band gaps of the first perovskite material, the second perovskite material, and the silicon-based material decrease in sequence.

3. The tandem solar cell according to claim 1, wherein The band gap of the first light absorbing layer is 1.68 eV to 2.2 eV; and / or, The band gap of the second light absorbing layer is 1.35 eV to 1.68 eV; and / or, The band gap of the third light absorbing layer is 0.5 eV to 1.35 eV.

4. The tandem solar cell according to claim 1, wherein The bottom cell includes a plurality of sub-cells connected in series, wherein the plurality of sub-cells are formed by dividing the stacked third electrode, the second light absorption layer, the composite layer, the third light absorption layer and the fourth electrode by trenches.

5. The tandem solar cell according to any one of claims 1 to 4, characterized in that: The top cell further includes at least one of a first transmission layer and a second transmission layer, the first transmission layer being disposed between the first electrode and the first light absorbing layer, and the second transmission layer being disposed between the first light absorbing layer and the second electrode; Among them, one of the first transport layer and the second transport layer is an electron transport layer, and the other is a hole transport layer.

6. The tandem solar cell according to any one of claims 1 to 4, characterized in that: The bottom cell further includes at least one of a third transmission layer and a fourth transmission layer, wherein the third transmission layer is provided between the third electrode and the second light absorption layer, and the fourth transmission layer is provided between the second light absorption layer and the composite layer; Among them, one of the third transport layer and the fourth transport layer is an electron transport layer, and the other is a hole transport layer.

7. The tandem solar cell according to any one of claims 1 to 4, characterized in that: The third light absorbing layer is a crystalline silicon layer.

8. The tandem solar cell according to any one of claims 1 to 4, characterized in that: The bottom cell further includes an n-type amorphous silicon layer and a p-type amorphous silicon layer, one of which is disposed between the third light absorption layer and the composite layer, and the other is disposed between the third light absorption layer and the fourth electrode.

9. The tandem solar cell according to any one of claims 1 to 4, characterized in that: The device further includes a first positive electrode and a first negative electrode, wherein one of the first positive electrode and the first negative electrode is connected to the first electrode, and the other is connected to the second electrode.

10. The tandem solar cell according to any one of claims 1 to 4, characterized in that: It also includes a second positive electrode and a second negative electrode, one of the second positive electrode and the second negative electrode is connected to the third electrode, and the other is connected to the fourth electrode.

11. The tandem solar cell according to any one of claims 1 to 4, characterized in that: Along the first direction, the third electrode and the fourth electrode are respectively disposed on two sides of the bottom cell.

12. The tandem solar cell according to claim 11, characterized in that: The device further includes a first adhesive film, which is arranged between the top battery and the bottom battery.

13. The tandem solar cell according to claim 11, characterized in that: The device further comprises a second adhesive film, which is arranged on a surface of the bottom battery away from the top battery.

14. The tandem solar cell according to claim 13, characterized in that: Also included is a panel, wherein the panel is a glass plate; The panel is arranged on the surface of the second adhesive film away from the top cell; and / or, The panel is arranged on a surface of the first electrode away from the bottom cell.

15. A photovoltaic module, characterized in that: A stacked solar cell comprising the stacked solar cell according to any one of claims 1 to 14.

16. An electrical device, characterized in that: A stacked solar cell comprising the stacked solar cell according to any one of claims 1 to 14.

17. A power generation device, characterized in that: A stacked solar cell comprising the stacked solar cell according to any one of claims 1 to 14.

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