Grinding control device and chemical mechanical grinding equipment

Abstract

The utility model provides a polishing control device and chemical mechanical polishing equipment, including: temperature detection subassembly, lapping fluid supply mechanism and controller, temperature detection subassembly is provided on the pressure cavity of lapping head and is used for detecting wafer lapping temperature, lapping fluid supply mechanism is used for supplying lapping fluid to lapping pad. And the controller is connected with the temperature detection assembly and the grinding fluid supply mechanism. According to the utility model, the temperature detection assembly is arranged on the pressure cavity of the grinding head, and the pressure cavity is in contact with the wafer in the wafer grinding process, so that the temperature detection assembly can detect the grinding temperature of the wafer in real time in the grinding process, and the controller controls the grinding temperature of the wafer according to the grinding temperature of the wafer detected in real time. And the grinding liquid supply mechanism is controlled to adjust the supply condition of the grinding liquid, so that the grinding temperature of the wafer is always kept within the set grinding temperature range of the wafer, and the grinding temperature of the wafer can be monitored, controlled and adjusted in the grinding process.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor manufacturing, especially to a kind of grinding control device and chemical mechanical grinding equipment. BACKGROUND

[0002] Chemical mechanical polishing (CMP) equipment is important equipment in semiconductor wafer production process, and CMP is the processing technology of chemical corrosion and mechanical removal, which is the only technology that can realize surface global planarization in mechanical processing process.CMP machine is roughly divided into grinding unit and cleaning unit, and the grinding unit includes grinding disc, grinding pad, grinding head and grinding dish, which cooperates to provide a stable process environment for wafer;The cleaning unit is used to clean the wafer, remove the surface residual particles and the complex produced by reaction, and finally the wafer leaves the machine after drying.The grinding unit is the place for global planarization of wafer surface, so it is the most important.

[0003] Grinding temperature is a key factor affecting grinding efficiency and CMP planarization effect, so grinding temperature control is very important.However, the wafer and the grinding pad are closely attached during the grinding process, making it difficult to monitor the grinding temperature.

[0004] Therefore, it is necessary to provide a kind of grinding control device and chemical mechanical grinding equipment to solve the above problems. INVENTION CONTENTS

[0005] The utility model aims at providing a kind of grinding control device and chemical mechanical grinding equipment to improve the problem that wafer grinding temperature cannot be effectively monitored during grinding.

[0006] The utility model provides a kind of grinding control device, comprising:

[0007] Temperature detection component, be located on the pressure cavity of the grinding head and be used to detect the grinding temperature of wafer;

[0008] Grinding liquid supply mechanism, for supplying grinding liquid to grinding pad;

[0009] Controller, with the temperature detection component and the grinding liquid supply mechanism connection, according to the grinding temperature of wafer, controls the grinding liquid supply mechanism to adjust the supply condition of grinding liquid.

[0010] The grinding control device has the advantages that: the temperature detection assembly is arranged on the pressure cavity of the grinding head, the pressure cavity can conduct heat of the wafer to the temperature detection assembly, so that the temperature detection assembly can detect the grinding temperature of the wafer in real time during the grinding process, the controller controls the grinding liquid supply mechanism to adjust the supply condition of the grinding liquid according to the detected grinding temperature of the wafer, so that the grinding temperature of the wafer is always kept in the set grinding temperature range of the wafer, and the grinding temperature of the wafer can be monitored and controlled during the grinding process.

[0011] In a possible embodiment, the temperature detection assembly comprises a plurality of thermocouples arranged on the pressure cavity at intervals, and the controller is connected with the plurality of thermocouples.

[0012] The grinding control device has the advantages that: the temperature detection assembly is arranged on the pressure cavity of the grinding head, the pressure cavity can conduct heat of the wafer to the temperature detection assembly, so that the temperature detection assembly can detect the grinding temperature of the wafer in real time during the grinding process, the controller controls the grinding liquid supply mechanism to adjust the supply condition of the grinding liquid according to the detected grinding temperature of the wafer, so that the grinding temperature of the wafer is always kept in the set grinding temperature range of the wafer, and the grinding temperature of the wafer can be monitored and controlled during the grinding process.

[0013] In a possible embodiment, the grinding liquid supply mechanism comprises a plurality of through holes arranged on the grinding table, a plurality of through holes arranged on the grinding pad, and a conveying pipeline assembly arranged in the grinding table, the through holes and the through holes are arranged one by one, the through holes and the corresponding through holes are communicated, the conveying pipeline assembly is connected with the plurality of through holes respectively, the grinding liquid is conveyed to the through holes through the conveying pipeline assembly, and the grinding liquid flows out from the through holes to different areas on the surface of the grinding pad.

[0014] The grinding control device has the advantages that: the temperature detection assembly is arranged on the pressure cavity of the grinding head, the pressure cavity can conduct heat of the wafer to the temperature detection assembly, so that the temperature detection assembly can detect the grinding temperature of the wafer in real time during the grinding process, the controller controls the grinding liquid supply mechanism to adjust the supply condition of the grinding liquid according to the detected grinding temperature of the wafer, so that the grinding temperature of the wafer is always kept in the set grinding temperature range of the wafer, and the grinding temperature of the wafer can be monitored and controlled during the grinding process.

[0015] In a possible embodiment, the conveying pipeline assembly comprises a first pipeline arranged in the grinding table, a plurality of second pipelines connected with the first pipeline respectively, and a control valve arranged on the second pipeline, the second pipeline and the through hole are arranged one by one, the end of the second pipeline away from the first pipeline is connected with the corresponding through hole, the controller is connected with the control valve, and the control valve is used for adjusting the flow of the grinding liquid flowing out from the through hole.

[0016] The beneficial effect is that the control valve is arranged on the second pipeline, the controller is connected with the control valve, and the flow of the polishing liquid of each through hole can be accurately controlled by adjusting the control valve. The controller can dynamically adjust the opening of the control valve according to the preset process parameters and the real-time monitored wafer surface temperature, so as to change the supply amount of the polishing liquid.

[0017] In a possible embodiment, the polishing liquid supply mechanism further comprises a heater arranged on the second pipeline, the controller is connected with the heater, and the heater is used for heating the polishing liquid in the second pipeline and can adjust the heating temperature of the polishing liquid.

[0018] The beneficial effect is that the heater is arranged on the second pipeline, the controller is connected with the heater, and the temperature of the polishing liquid of each through hole can be accurately controlled by adjusting the heater. The controller can dynamically adjust the heating temperature of the polishing liquid by the heater according to the preset process parameters and the real-time monitored wafer surface temperature, so as to change the supply amount of the polishing liquid.

[0019] In a possible embodiment, the controller comprises:

[0020] A temperature sensing module connected with the plurality of thermocouples and used for converting the thermoelectric power signals from the thermocouples into a polishing temperature.

[0021] In a possible embodiment, the controller further comprises:

[0022] A data processing module connected with the temperature sensing module and used for comparing the polishing temperature with a set polishing temperature range.

[0023] A control adjustment module connected with the data processing module, when the polishing temperature is less than the minimum value of the set polishing temperature range, the control adjustment module controls the heater to increase the heating temperature of the polishing liquid and / or controls the control valve to reduce the flow of the polishing liquid; when the polishing temperature is greater than the maximum value of the set polishing temperature range, the control adjustment module controls the heater to reduce the heating temperature of the polishing liquid and / or controls the control valve to increase the flow of the polishing liquid.

[0024] The beneficial effect is that the polishing temperature is compared with the set polishing temperature range, if the polishing temperature is too small, the heating temperature of the polishing liquid is increased and / or the flow of the polishing liquid is reduced; if the polishing temperature is too large, the heating temperature of the polishing liquid is reduced and / or the flow of the polishing liquid is increased, so that the polishing temperature of the wafer is always kept within the set polishing temperature range of the wafer.

[0025] In a possible embodiment, the through holes are arranged in a plurality of groups, and the through holes in each group are arranged in a ring array along a circumferential direction of the polishing pad.

[0026] The plurality of groups of through holes are arranged in a radial direction of the polishing pad, so that the distribution range of the through holes can cover the entire polishing pad, and the polishing liquid can be more evenly distributed on different areas of the polishing pad, thereby ensuring the uniformity of wafer polishing.

[0027] In a possible embodiment, the thermocouples are arranged in a plurality of groups, and the thermocouples in each group are arranged in a ring array along a circumferential direction of the pressure cavity.

[0028] The plurality of groups of thermocouples are arranged in a radial direction of the pressure cavity, so that the distribution range of the thermocouples can cover the entire wafer surface when the pressure cavity is in contact with the wafer, thereby more comprehensively obtaining the temperature distribution of each area of the wafer surface.

[0029] The utility model also provides a chemical mechanical polishing equipment, its characterized in that, including polishing head, polishing table, polishing pad and the polishing control device in any one embodiment of above. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 It is the polishing control device's sectional view of the utility model.

[0031] Figure 2 It is the schematic view of polishing liquid supply mechanism, polishing table, polishing pad in the polishing control device of the utility model.

[0032] Figure 3 It is the schematic view of controller in the polishing control device of the utility model.

[0033] Figure 4 It is the overhead view of polishing pad, polishing head in the polishing control device of the utility model.

[0034] Mark explanation: 110, temperature detection assembly;111, thermocouple;120, polishing liquid supply mechanism;121, perforation;122, through hole;123, delivery pipeline assembly;1231, first pipeline;1232, second pipeline;1233, control valve;124, heater;130, controller;131, temperature sensing module;132, data processing module;133, control adjustment module;200, polishing head;210, pressure cavity;300, polishing table;400, polishing pad;500, wafer. DETAILED DESCRIPTION

[0035] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme of the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of the present application.

[0036] In view of the problems in the prior art, the embodiments of the present application provide a grinding control device, Figure 1 is a sectional view of the grinding control device of the present application, Figure 3 is a schematic view of the controller in the grinding control device of the present application, and Figure 1 and Figure 3 The grinding control device comprises a temperature detection assembly 110, a grinding liquid supply mechanism 120 and a controller 130. The temperature detection assembly 110 is arranged on a pressure cavity 210 of a grinding head 200 and is used for detecting the grinding temperature of a wafer 500. The grinding liquid supply mechanism 120 is used for supplying grinding liquid to a grinding pad 400. The controller 130 is connected with the temperature detection assembly 110 and the grinding liquid supply mechanism 120. According to the grinding temperature of the wafer 500, the controller 130 controls the grinding liquid supply mechanism 120 to adjust the supply condition of the grinding liquid.

[0037] The air pressure inside the pressure cavity 210 can be adjusted by an air pressure control system. For example, a negative pressure is formed by air extraction to realize adsorption of the wafer 500, and the wafer 500 is grinded by pressurization. When the pressure cavity 210 of the grinding head 200 is pressurized, the pressure cavity 210 will expand to a certain extent. The force generated by the expansion of the pressure cavity 210 will act on the wafer 500, so that the wafer 500 is attached to the grinding pad 400. Under the action of the rotation of the grinding head 200, the wafer 500 is grinded.

[0038] In the wafer 500 grinding process, accurate control of temperature is crucial, because too high temperature can cause wafer 500 surface damage, thermal stress increase and uneven grinding, while too low temperature can affect the grinding efficiency and material removal rate. In order to achieve real-time monitoring and control of the wafer 500 grinding temperature, in the present embodiment, a temperature detection assembly 110 is provided on the pressure cavity 210 of the grinding head 200. In the wafer 500 grinding process, the pressure cavity 210 will be in close contact with the wafer 500, forming a good heat conduction path. The heat generated by the wafer 500 during the grinding process will be conducted along this heat conduction path to the pressure cavity 210, and then captured by the temperature detection assembly 110. Therefore, the temperature detection assembly 110 can detect the grinding temperature of the wafer 500 in real time during the grinding process. Once the controller 130 determines that the grinding temperature exceeds the set grinding temperature range of the wafer 500, the controller 130 will immediately start the corresponding adjustment mechanism to adjust the supply of the grinding liquid by controlling the grinding liquid supply mechanism 120, so that the grinding temperature of the wafer 500 is always maintained within the set grinding temperature range of the wafer 500, thereby achieving real-time, effective monitoring and control of the grinding temperature of the wafer 500 during the wafer 500 grinding process.

[0039] In an embodiment, referring to Figure 1 The temperature detection assembly 110 includes a plurality of thermocouples 111 arranged at intervals on the pressure cavity 210, and the controller 130 is connected with the plurality of thermocouples 111.

[0040] During the wafer 500 grinding process, due to various factors (such as grinding pressure, grinding liquid flow, etc.), a temperature gradient can be formed on the surface of the wafer 500. Single-point detection may not accurately capture this temperature gradient, may not accurately reflect the overall temperature condition, and may easily cause measurement error. In the present embodiment, a plurality of thermocouples 111 are provided on the pressure cavity 210 to monitor the grinding temperature of different areas on the surface of the wafer 500 in real time. This multi-point detection method can better reflect the overall temperature distribution on the surface of the wafer 500 than single-point detection, thereby improving the accuracy of temperature detection. The temperature information obtained by multi-point detection can be sent to the controller 130, and the controller 130 can make more accurate feedback adjustment measures according to the temperature information, so as to achieve more effective temperature regulation.

[0041] In the present scheme, the thermocouples 111 are micro thermocouples 111, which are temperature measuring elements based on thermoelectric effect, and have the advantages of high detection accuracy, large range, simple structure, bending resistance, high pressure resistance, fast thermal response time and strong durability.

[0042] In an embodiment, Figure 2This is a schematic diagram of the grinding liquid supply mechanism, grinding table, and grinding pad in the grinding control device of the present invention. Figure 2 The polishing liquid supply mechanism 120 includes a plurality of through holes 121 provided on the polishing table 300, a plurality of through holes 122 provided on the polishing pad 400, and a delivery pipeline assembly 123 provided in the polishing table 300. The through holes 122 are arranged in a one-to-one correspondence with the through holes 121. The through holes 122 are connected to the corresponding through holes 121. The delivery pipeline assembly 123 is respectively connected to the plurality of through holes 121, and the polishing liquid is delivered to the through holes 121 through the delivery pipeline assembly 123, so that the polishing liquid flows out from the through holes 122 to different areas of the polishing pad 400.

[0043] In this embodiment, the polishing pad 400 has a porous structure, and the through holes 122 on the polishing pad 400 correspond one-to-one with the through holes 121 on the polishing table 300. The delivery pipeline assembly 123 delivers polishing liquid to several of the through holes 121. The polishing liquid passes through the through holes 122 corresponding to the through holes 121 and is then delivered to different areas on the surface of the polishing pad 400. This allows the polishing liquid to be evenly dispersed on the surface of the polishing pad 400, avoiding the situation where the polishing liquid accumulates in some areas and is insufficient in other areas, thereby improving the uniformity of the distribution of the polishing liquid on the surface of the polishing pad 400. The uniform distribution of the polishing liquid helps ensure that all areas of the surface of the wafer 500 are fully polished, which not only improves the polishing efficiency of the wafer 500, but also reduces uneven wear on the surface of the wafer 500, thereby improving the polishing quality of the wafer 500.

[0044] In one embodiment, see Figure 2 The delivery pipeline assembly 123 includes a first pipeline 1231 arranged in the grinding table 300, a plurality of second pipelines 1232 respectively connected to the first pipeline 1231, and a control valve 1233 arranged on the second pipeline 1232. The second pipelines 1232 are arranged in a one-to-one correspondence with the through holes 121. One end of the second pipeline 1232 away from the first pipeline 1231 is connected to the corresponding through hole 121. The controller 130 is connected to the control valve 1233. The control valve 1233 is used to adjust the flow rate of the grinding liquid flowing out of the through hole 122.

[0045] In this embodiment, the polishing liquid flows in from the first pipe 1231, is branched by the second pipes 1232 and delivered to the perforations 121, and then is delivered to different areas on the surface of the polishing pad 400 through the through holes 122. By providing a separate control valve 1233 on each second pipe 1232, the flow of the polishing liquid from each through hole 122 can be independently and accurately adjusted. The controller 130 adjusts the flow of the polishing liquid in time according to the real-time polishing temperature detection during the polishing process, so that the polishing temperature of the wafer 500 is always kept within the set polishing temperature range of the wafer 500, thereby ensuring the polishing quality of the wafer 500.

[0046] In a specific embodiment, referring to Figure 2 , the polishing liquid supply mechanism 120 further comprises a heater 124 provided on the second pipe 1232, and the controller 130 is connected with the heater 124. The heater 124 is used to heat the polishing liquid in the second pipe 1232 and can adjust the heating temperature of the polishing liquid.

[0047] In this embodiment, by providing a separate heater 124 on each second pipe 1232, the heating temperature of the polishing liquid by the heater 124 can be accurately adjusted, thereby achieving the temperature adjustment of the polishing liquid flowing out of the through hole 122. The controller 130 adjusts the temperature of the polishing liquid in time according to the real-time polishing temperature detection during the polishing process, so that the polishing temperature of the wafer 500 is always kept within the set polishing temperature range of the wafer 500, thereby ensuring the polishing quality of the wafer 500.

[0048] In an embodiment, referring to Figure 3 , the controller 130 comprises a temperature sensing module 131 connected with the thermocouples 111 and used to convert the thermoelectric power signals from the thermocouples 111 into the polishing temperature. The thermocouples 111 are composed of two conductors with different compositions, and will generate a thermoelectric power when there is a temperature gradient between the two ends. The thermoelectric power signals generated by the thermocouples 111 are weak and change with temperature. The temperature sensing module 131 is responsible for amplifying, filtering and converting these signals to obtain the polishing temperature of the wafer 500.

[0049] In an embodiment, referring to Figure 3The controller 130 further comprises a data processing module 132 connected with the temperature sensing module 131 and used for comparing the polishing temperature with a set polishing temperature range; a control adjustment module 133 connected with the data processing module 132, when the polishing temperature is less than the minimum value of the set polishing temperature range, the control adjustment module 133 controls the heater 124 to increase the heating temperature of the polishing liquid and / or controls the control valve 1233 to reduce the flow of the polishing liquid; when the polishing temperature is greater than the maximum value of the set polishing temperature range, the control adjustment module 133 controls the heater 124 to reduce the heating temperature of the polishing liquid and / or controls the control valve 1233 to increase the flow of the polishing liquid.

[0050] The data processing module 132 can timely find the deviation between the polishing temperature and the set polishing temperature range through intelligent judgment, and trigger the control adjustment module 133 to feedback adjustment. When the polishing temperature is lower than the minimum value of the set polishing temperature range, the control adjustment module 133 will increase the heating temperature of the heater 124 to increase the temperature of the polishing liquid, or reduce the opening of the control valve 1233 to reduce the flow of the polishing liquid, so as to accelerate the temperature rising speed of the polishing liquid; when the polishing temperature is higher than the maximum value of the set polishing temperature range, the control adjustment module 133 will reduce the heating temperature of the heater 124 to reduce the temperature of the polishing liquid, or increase the opening of the control valve 1233 to increase the flow of the polishing liquid, so as to accelerate the temperature falling speed of the polishing liquid, so as to keep the polishing temperature in the set polishing temperature range. Through the dynamic adjustment mechanism, the polishing temperature is accurately and timely controlled, so as to improve the polishing quality of the wafer 500.

[0051] If the polishing liquid is unevenly distributed on the polishing pad 400, it may cause the polishing rate of different areas on the surface of the wafer 500 to be inconsistent, thereby affecting the flatness and surface quality of the wafer 500.

[0052] To solve this technical problem, in one embodiment, Figure 4 The top view of the polishing pad and the polishing head in the polishing control device of the utility model, see Figure 4 The through holes 122 are in several groups, and the several groups of through holes 122 are distributed along the radial direction of the polishing pad 400, and each group of through holes 122 is distributed in a ring array along the circumferential direction of the polishing pad 400, so that the distribution range of the through holes 122 can cover the entire polishing pad 400, ensuring that the polishing liquid can be more evenly distributed on different areas of the polishing pad 400, thereby ensuring the uniformity of the polishing of the wafer 500 and improving the polishing quality of the wafer 500.

[0053] In a specific embodiment, see Figure 1The thermocouples 111 are in several groups, and the several groups of thermocouples 111 are distributed along the radial direction of the pressure cavity 210, and each group of thermocouples 111 is arranged in a ring array along the circumferential direction of the pressure cavity 210. When the pressure cavity 210 is in contact with the wafer 500, the distribution range of the thermocouples 111 can cover the entire surface of the wafer 500, so that the temperature changes of each region of the wafer 500 can be captured in real time and accurately, so that the controller 130 can perform feedback adjustment more accurately.

[0054] The utility model also provides a kind of chemical mechanical grinding equipment, it is characterized by including grinding head, grinding table, grinding pad and the grinding control device in any of the above embodiments.

[0055] The technical effects of the grinding control device of the utility model are explained in detail below.

[0056] 1, by being provided with temperature detection assembly 110 on the pressure cavity 210 of grinding head 200, the grinding temperature condition of wafer 500 in the grinding process can be detected in real time and accurately. This design ensures the immediacy and accuracy of the grinding temperature, and provides a reliable basis for subsequent control adjustment.

[0057] 2, controller 130 controls grinding liquid supply mechanism 120 to adjust the supply condition of grinding liquid according to the grinding temperature of wafer 500 detected in real time, so that the grinding temperature of wafer 500 is always kept in the set grinding temperature range of wafer 500, so that the grinding temperature of wafer 500 can be monitored and controlled in the grinding process.

[0058] 3, temperature detection assembly 110 includes several thermocouples 111 spaced apart on the pressure cavity 210, these thermocouples 111 can cover different regions of the surface of wafer 500, realize multi-point monitoring. By integrating the data of each thermocouple 111, the grinding temperature condition of the surface of wafer 500 can be more comprehensively understood, to provide data support for accurate control.

[0059] 4, the design of grinding liquid supply mechanism 120 makes the grinding liquid be able to be evenly distributed to different regions of grinding pad 400, avoids the excessive accumulation of grinding liquid in some regions or the deficiency in other regions. At the same time, by adjusting the opening of control valve 1233, the flow of grinding liquid of each through hole 122 can be accurately controlled.

[0060] 5, heater 124 is arranged on second pipeline 1232, and is connected with heater 124 by controller 130, to accurately control the heating temperature of grinding liquid, so as to realize accurate control of the temperature of grinding liquid flowing out of through hole 122.

[0061] 6、temperature sensing module 131 processes thermoelectric power signal to obtain polishing temperature, data processing module 132 judges polishing temperature, and control adjustment module 133 carries out feedback adjustment according to the judgment result, when the polishing temperature is small, control adjustment module 133 will increase the heating temperature of the polishing liquid or reduce its flow, so as to improve the polishing temperature. On the contrary, if the polishing temperature is large, the control adjustment module 133 will reduce the heating temperature of the polishing liquid or increase its flow, so as to reduce the polishing temperature. In this way, by adjusting the temperature and flow of the polishing liquid, the control adjustment module 133 can ensure that the polishing temperature of the wafer 500 always remains within the set polishing temperature range of the wafer 500.

[0062] In the description of the present application, it should be understood that the terms "comprising" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusion, for example, a process, method, system, product or equipment comprising a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or equipment.

[0063] It should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0064] In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more features. In the description of the present application, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0065] Although the embodiments of the present application have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are within the scope and spirit of the present application described in the claims. Moreover, the present application described herein can have other embodiments and can be implemented or realized in various ways. Unless otherwise defined, the technical terms or scientific terms used herein should be understood as the usual meaning understood by those skilled in the art.

Claims

1. A grinding control device, characterized in that: include: A temperature detection component is provided on the pressure chamber of the grinding head and is used to detect the grinding temperature of the wafer; A polishing liquid supply mechanism, for supplying polishing liquid to the polishing pad; The controller is connected to the temperature detection component and the polishing liquid supply mechanism, and controls the polishing liquid supply mechanism to adjust the supply of the polishing liquid according to the polishing temperature of the wafer.

2. The grinding control device according to claim 1, characterized in that: The temperature detection component includes a plurality of thermocouples arranged at intervals on the pressure cavity, and the controller is connected to the plurality of thermocouples.

3. The grinding control device according to claim 2, characterized in that: The grinding liquid supply mechanism includes a plurality of through-holes provided on the grinding table, a plurality of through-holes provided on the grinding pad, and a delivery pipeline assembly provided in the grinding table. The through-holes are arranged in a one-to-one correspondence with the through-holes, and the through-holes are connected to the corresponding through-holes. The delivery pipeline assembly is respectively connected to the plurality of through-holes, and the grinding liquid is delivered to the through-holes through the delivery pipeline assembly, so that the grinding liquid flows out from the through-holes to different areas of the grinding pad.

4. The grinding control device according to claim 3, characterized in that: The delivery pipeline assembly includes a first pipeline arranged in the grinding table, a plurality of second pipelines respectively connected to the first pipeline, and a control valve arranged on the second pipeline. The second pipelines are arranged in a one-to-one correspondence with the through holes. One end of the second pipeline away from the first pipeline is connected to the corresponding through hole. The controller is connected to the control valve, and the control valve is used to adjust the flow rate of the grinding liquid flowing out of the through hole.

5. The grinding control device according to claim 4, characterized in that: The grinding liquid supply mechanism further includes a heater provided on the second pipeline. The controller is connected to the heater. The heater is used to heat the grinding liquid in the second pipeline and can adjust the heating temperature of the grinding liquid.

6. The grinding control device according to claim 5, characterized in that: The controller includes: The temperature sensing module is connected to the plurality of thermocouples and is used for converting the thermoelectromotive force signals from the thermocouples into grinding temperature.

7. The grinding control device according to claim 6, characterized in that: The controller further includes: a data processing module connected to the temperature sensing module and configured to compare the grinding temperature with a set grinding temperature range; A control and regulation module is connected to the data processing module. When the grinding temperature is lower than the minimum value of the set grinding temperature range, the control and regulation module controls the heater to increase the heating temperature of the grinding liquid and / or controls the control valve to reduce the flow rate of the grinding liquid; when the grinding temperature is higher than the maximum value of the set grinding temperature range, the control and regulation module controls the heater to lower the heating temperature of the grinding liquid and / or controls the control valve to increase the flow rate of the grinding liquid.

8. The grinding control device according to any one of claims 3 to 7, characterized in that: The through holes are arranged in a plurality of groups, and the through holes in the plurality of groups are distributed at intervals along the radial direction of the polishing pad. The through holes in each group are distributed in a ring array along the circumferential direction of the polishing pad.

9. The grinding control device according to claim 8, characterized in that: The thermocouples are arranged in a plurality of groups, and the plurality of groups of thermocouples are distributed at intervals along the radial direction of the pressure cavity, and each group of thermocouples is distributed in a ring array along the circumferential direction of the pressure cavity.

10. A chemical mechanical polishing device, characterized in that: The invention comprises a grinding head, a grinding table, a grinding pad and a grinding control device as claimed in any one of claims 1 to 9.

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