Gas distribution box and vapor deposition equipment

Abstract

The utility model discloses a gas distribution box and vapor deposition equipment. The gas distribution box comprises an inner space defined by side walls, a top wall and a bottom wall; the air inlet pipe is communicated with the internal space; the at least two air outlet pipes are communicated with the internal space; the perforated plate is arranged in the internal space and divides the internal space into a gas mixing cavity and a diffusion cavity which are communicated with each other; the gas inlet pipe is communicated with the gas mixing cavity through the diffusion cavity; according to the gas distribution box, the perforated plate is arranged, so that the flow resistance of gas in the gas distribution box is large, the flow speed is low, the gas mixing time in the gas distribution box is prolonged, and the gas mixing uniformity is improved.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor processing, in particular to a gas distribution box and gas phase deposition equipment. Background Art

[0002] Chemical vapor deposition (CVD) is a technique used to deposit thin films on substrates, widely used in semiconductor manufacturing and microelectronics. During the CVD process, one gas must be mixed with another before entering the reaction chamber. This mixed gas is then introduced into the chamber and sprayed onto the substrate via a gas showerhead. Currently, this process suffers from uneven mixing of the two gases, resulting in less-than-ideal thin film deposition results.

[0003] In addition, with the development of semiconductor processing technology, the same vapor deposition equipment can include multiple reaction chambers to simultaneously perform thin film deposition on the substrate. However, due to limited space, higher requirements are placed on the volume and mixing effect of the gas mixing structure.

[0004] The statements herein merely provide background technology related to the present invention and do not necessarily constitute prior art. Utility Model Content

[0005] The purpose of the utility model is to provide a gas distribution box and a vapor deposition device, which can make gas mixing more uniform, improve the thin film deposition effect, and also improve the space utilization rate of the vapor deposition device.

[0006] To achieve the above-mentioned purpose, the utility model proposes a gas distribution box, comprising: an internal space surrounded by side walls, a top wall and a bottom wall; an air inlet pipe, which is connected to the internal space; at least two air outlet pipes, which are connected to the internal space; a porous plate, which is arranged in the internal space to divide the internal space into a connected mixing chamber and a diffusion chamber; the air inlet pipe is connected to the mixing chamber through the diffusion chamber.

[0007] Optionally, the outer edge of the porous plate is arranged between the top wall and the side wall, and / or between the bottom wall and the side wall; the air inlet pipe is arranged on the top wall and / or the bottom wall.

[0008] Optionally, the air outlet pipe is arranged on the side wall.

[0009] Optionally, a heater is provided on the side wall.

[0010] Optionally, the cross-section of the internal space is circular or regular polygonal, the air inlet pipe is arranged on the upper side and / or lower side of the internal space, and the air outlet pipe is evenly arranged on the outside of the internal space.

[0011] Optionally, an annular air-distributing plate is provided on the inner side of the side wall.

[0012] Optionally, the upper side and / or the lower side of the central area of ​​the porous plate is recessed toward the porous plate itself.

[0013] Optionally, the inner side of the top wall and / or the bottom wall is recessed in a direction away from the internal space.

[0014] The present utility model also proposes another gas distribution box, comprising: an internal space surrounded by side walls, a top wall and a bottom wall; an air inlet pipe, which is connected to the internal space; at least two air outlet pipes, which are connected to the internal space; an annular air uniforming plate, which is arranged in the internal space to divide the internal space into a connected mixing chamber and a diffusion chamber; the air outlet pipe is connected to the mixing chamber through the diffusion chamber.

[0015] Optionally, the air inlet pipe is arranged on the top wall and / or bottom wall; the air outlet pipe is arranged on the side wall.

[0016] Optionally, a heater is provided on the side wall.

[0017] Optionally, the top wall and the air uniforming plate are integrally formed, and / or the side wall and the bottom wall are integrally formed.

[0018] Optionally, the cross-section of the internal space is circular or regular polygonal, the air inlet pipe is arranged on the upper side and / or lower side of the internal space, and the air outlet pipe is evenly arranged on the outside of the internal space.

[0019] Optionally, the air uniforming plate extends along the direction of the side wall.

[0020] The utility model also proposes a vapor deposition device, comprising: at least two reaction chambers; a gas distribution box, wherein the gas distribution box is located above the vapor deposition device; and the gas outlet pipes of the gas distribution box are connected to the reaction chambers in a one-to-one correspondence.

[0021] Compared with the prior art, the technical solution of the utility model has at least the following advantages and beneficial effects:

[0022] The utility model provides a gas distribution box with a porous plate, which divides the space in the gas distribution box into a diffusion chamber and a gas mixing chamber. When the process gas passes through the porous plate, it encounters a large flow resistance, a slow flow speed, and a longer gas mixing time, thereby improving the uniformity of gas mixing.

[0023] Further, the gas distribution box has a plurality of uniformly arranged gas outlet pipes, each of which is connected to a reaction chamber, so that a plurality of reaction chambers in the vapor deposition equipment share the same gas distribution box, thereby ensuring the uniformity of the gas among the reaction chambers and improving the space utilization of the vapor deposition equipment. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 FIG. 1 is a schematic view of the gas distribution box in the first embodiment of the present application;

[0025] Figure 2 FIG. 2 is a schematic view of the first porous plate in the first embodiment of the present application;

[0026] Figure 3 FIG. 6 is a schematic view of the gas distribution box in the second embodiment of the present application;

[0027] Figure 4 FIG. 7 is a sectional view of the gas distribution box in the second embodiment of the present application;

[0028] Figure 5 FIG. 8 is a schematic view of the gas distribution box in the third embodiment of the present application. DETAILED DESCRIPTION

[0029] The technical solutions, structural features, purposes and effects of the embodiments of the present application will be described in detail below. Figures 1 to 5 The technical solutions, structural features, purposes and effects of the embodiments of the present application will be described in detail below.

[0030] It should be noted that the drawings are very simplified and use non-precise proportions, and are only used to facilitate and clarify the purpose of assisting the description of the embodiments of the present application, and are not used to limit the conditions of the embodiments of the present application, so they do not have technical substantive significance. Any modification of the structure, change of the proportional relationship or adjustment of the size, without affecting the effects and purposes that can be achieved by the present application, should still fall within the scope of the technical content disclosed by the present application.

[0031] It should be noted that in the present application, relationship terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between the entities or operations. Moreover, the terms "include", "contain" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements not only includes the explicitly listed elements, but also includes other elements not explicitly listed or inherent to such process, method, article or equipment.

[0032] The existing vapor deposition equipment includes a reaction chamber connected with an external gas supply device, the gas supply device inputs process gases, such as a silicon-containing gas and an oxygen-containing gas, into a gas shower head in the reaction chamber for mixing, and then outputs the mixed process gases to above a substrate through the gas shower head for depositing a semiconductor thin film on the substrate. Alternatively, the process gases can be mixed in an external mixer, and then input into the reaction chamber and output to above the substrate through the gas shower head. However, the above two methods have the problem of uneven gas mixing, which affects the quality of the deposited thin film. In addition, with the development of semiconductor processing technology, the same vapor deposition equipment can include multiple reaction chambers for simultaneously depositing a thin film on a substrate, but due to the limited space, the design of multiple reaction chambers puts higher requirements on the space utilization of the vapor deposition equipment.

[0033] To solve the above problems, the utility model provides a kind of gas distribution box and vapor deposition equipment, the gas distribution box is equipped with perforated plate, the space in gas distribution box is divided into diffusion cavity and gas mixing cavity, process gas is dispersed when passing through perforated plate, gas flow is blocked by perforated plate, and the flow resistance is large, so the flow speed slows down, gas can be more evenly dispersed in diffusion cavity, and mixed at low speed in gas mixing cavity, to improve the gas mixing uniformity;In addition, the gas distribution box also has multiple gas outlet pipes, each gas outlet pipe connects a reaction chamber, and the mixed gas is uniformly input into multiple reaction chambers, that is, multiple reaction chambers in vapor deposition equipment share the same gas distribution box, which improves the space utilization of vapor deposition equipment while ensuring the uniformity of gas between reaction chambers.

[0034] The technical solutions of the embodiments of the present application will be described in detail below with reference to the drawings.

[0035] Please refer to Figure 1 It is a side view schematic diagram of the gas distribution box 10 in the first embodiment. The gas distribution box 10 is located outside the vapor deposition equipment and is arranged above the reaction chamber of the vapor deposition equipment. The gas distribution box 10 has a top wall 12, a side wall 14 and a bottom wall 17, which enclose an internal space 18. Two gas inlet pipes 11 are arranged on the top wall 12 and the bottom wall 17 respectively, so as to communicate with the internal space 18. The two gas inlet pipes 11 are also connected with the first gas source and the second gas source outside the vapor deposition equipment respectively, so that the gases in the first gas source and the second gas source enter the internal space 18 through the two gas inlet pipes 11 respectively and mix in the internal space 18. Four gas outlet pipes 15 are arranged on the side wall 17 and communicate with the internal space 18, and each gas outlet pipe 15 is also connected with a reaction chamber of the vapor deposition equipment, so that the mixed gas in the internal space 18 flows into the four reaction chambers through the four gas outlet pipes 15. In other embodiments, the number of gas outlet pipes 15 can be adjusted from two to more according to actual needs.

[0036] The first gas source and the second gas source are respectively a silicon source and an oxygen source. In other embodiments, the first gas source and the second gas source can also be mixed gas sources containing multiple gases, so that two or more gases enter the internal space 18 and mix.

[0037] The internal space 18 is provided with a first porous plate 13 and a second porous plate 16, which divide the internal space 18 into a first diffusion cavity 181, a mixing cavity 182 and a second diffusion cavity 183. Among them, the top wall 12 and the first porous plate 13 form the first diffusion cavity 181, the side wall 14, the first porous plate 13 and the second porous plate 16 form the mixing cavity 182, and the third porous plate 16 and the bottom wall 17 form the second diffusion cavity 183.

[0038] The first porous plate 13 and the second porous plate 16 are both plate-shaped structures with multiple through holes. Taking the first porous plate 13 as an example, please refer to Figure 2 The central region of the first porous plate 13 has multiple through holes 131, and the diameter of each through hole 131 is smaller than the gas inlet of the gas inlet pipe 11. The central region of the first porous plate 13 corresponds to the internal space 18. Figure 1 In some embodiments, the number of through holes is schematically reduced, and in Figure 2 In some embodiments, the number of through holes is schematically increased, and both do not limit the number of through holes of the utility model.

[0039] In some embodiments, the top wall 12 and the bottom wall 17 have edge regions and central regions. The edge regions of the top wall 12 and the bottom wall 17 are arranged opposite to the upper and lower sides of the side wall 14, and the central regions of the top wall 12 and the bottom wall 17 are respectively recessed away from the mixing cavity 182, so as to expand the volume of the mixing cavity 182.

[0040] Please continue to refer to Figure 1The first porous plate 13 and the second porous plate 16 include edge regions and central regions. The edge region of the first porous plate 13 is horizontally arranged between the top wall 12 and the side wall 14, separating the first diffusion chamber 181 and the mixing chamber 182. The edge region of the second porous plate 16 is horizontally arranged between the bottom wall 17 and the side wall 14, separating the mixing chamber 182 and the second diffusion chamber 183. The two gas inlet pipes 11 communicate with the mixing chamber 182 through the first diffusion chamber 181 and the second diffusion chamber 183 respectively. After the gas enters the internal space 18 through the gas inlet pipe 11, it first enters the first diffusion chamber 181 or the second diffusion chamber 183, diffuses in the first diffusion chamber 181 or the second diffusion chamber 183, and then enters the mixing chamber 182 through the multiple through holes in the first porous plate 13 or the second porous plate 16, mixes in the mixing chamber 182, and finally flows into the reaction chamber through the gas outlet pipe 15. The central regions of the first porous plate 13 and the second porous plate 16 are recessed on both sides to increase the volume of the diffusion chamber and the mixing chamber. Of course, in other embodiments, the recessed side can be selected according to actual needs.

[0041] Compared with the direct mixing of the gas from the gas inlet pipe 11 into the mixing chamber 182, the first porous plate 13 and the second porous plate 16 with multiple through holes are provided in this embodiment, and the diameter of each through hole 131 is smaller than the gas inlet of the gas inlet pipe 11. The existence of these through holes 131 disperses the gas flow path, increases the flow resistance of the gas during the process of entering the mixing chamber 182, slows down the gas flow rate, increases the gas mixing time, and thus improves the uniformity of gas mixing.

[0042] The gas outlet pipe 15 directly communicates with the mixing chamber 182, and four gas outlet pipes 15 are evenly arranged on the side wall 14, so that the gas in the mixing chamber 182 uniformly flows out through the gas outlet pipe 15 and enters the corresponding connected reaction chamber, thereby ensuring the gas consistency between each reaction chamber. In other embodiments, two or more gas outlet pipes 15 are evenly arranged on the side wall 14 to match the corresponding number of reaction chambers.

[0043] The side wall 14 is also provided with a heater (not shown in the figure). The heater is arranged inside the side wall 14 or around the outer wall of the side wall 14 to heat the internal space 18, so that the temperature in the internal space 18 reaches 120-150℃, so that the gas in the internal space 18 is fully maintained in a gaseous state, preventing process defects caused by gas condensation or blocking of the through holes in the porous plate.

[0044] The internal space 18 is cylindrical with a circular cross-section. Accordingly, the gas mixing chamber 182 is also cylindrical. Two inlet pipes 11 are disposed at the upper and lower sides of the internal space 18, respectively. Four outlet pipes 15 are evenly spaced outside the internal space 18, with the angle between each two outlet pipes 15 being 90°. This improves the uniformity of the gas within the gas mixing chamber 182 and makes the gas near each outlet pipe 15 more uniform, thereby ensuring uniform gas flow into each reaction chamber. In other embodiments, the cross-section of the internal space 18 may also be a regular polygon.

[0045] The through holes on the first porous plate 13 and the second porous plate 16 are evenly distributed, so that the gas enters the mixing chamber 182 evenly through the first porous plate 13 or the second porous plate 16, thereby helping to make the gas mixing more uniform. Furthermore, the through holes of the first porous plate 13 and the second porous plate 16 are arranged relative to each other, so that the two gases enter the mixing chamber 182 from top to bottom through the first porous plate 13, and after entering the mixing chamber 182 from bottom to top through the second porous plate 16, due to the relative gas paths, the two gases collide with each other from top to bottom, thereby achieving a better gas mixing effect. However, the collision of the two gases from top to bottom will also increase the gas flow resistance, thereby increasing the kinetic energy loss of the airflow. In other embodiments, when the gas mixing effect is not required to be high or some airflow kinetic energy needs to be retained, the through holes of the first porous plate 13 and the second porous plate 16 can also be staggered to avoid collision of the gases from top to bottom, thereby reducing the gas flow resistance in the mixing chamber 182 and retaining more airflow kinetic energy. Furthermore, the first porous plate 13 and the second porous plate 16 with different through-hole specifications can be replaced as needed to obtain an ideal gas mixing effect.

[0046] The top wall 12, side walls 14, and bottom wall 17 are made of aluminum or stainless steel, and the first porous plate 13 and second porous plate 16 are made of aluminum, nickel, or stainless steel. Sealing rings are provided between the top wall 12 and the first porous plate 13, between the bottom wall 17 and the second porous plate 16, between the first porous plate 13 and the side walls 14, and between the second porous plate 16 and the side walls 14 to maintain the sealing of the internal space 18. In other embodiments, some or all of the top wall 12, first porous plate 13, side walls 14, second porous plate 16, and bottom wall 17 may be welded to maintain sealing.

[0047] This embodiment also proposes a vapor deposition device, including the above-mentioned gas distribution box 10 and at least two reaction chambers. The gas distribution box 10 is located above the vapor deposition device. The number of gas outlet pipes 15 of the gas distribution box 10 corresponds to the number of reaction chambers and is connected one-to-one. The process gas enters the internal space 18 through the air inlet pipe 11, diffuses through the first diffusion chamber 181 and the second diffusion chamber 183, enters the mixing chamber 182 through the first porous plate 13 and the second porous plate 16 for mixing, and then enters the corresponding reaction chamber through multiple gas outlet pipes 15 to perform the thin film deposition process. By arranging multiple reaction chambers to share the same gas distribution box 10, the space utilization rate of the vapor deposition device is improved while ensuring the uniformity of gas mixing.

[0048] In other embodiments, the internal space of the gas distribution box may be provided with only a first porous plate or a second porous plate. Accordingly, the air inlet pipe is provided on the top wall or the bottom wall. The first porous plate or the second porous plate divides the internal space into a gas mixing chamber and a diffusion chamber. The air inlet pipe is connected to the gas mixing chamber through the diffusion chamber, and the air outlet pipe is directly connected to the gas mixing chamber. The air inlet pipe is connected to a mixed gas source or multiple single gas sources, allowing two or more gases to enter the diffusion chamber. After diffusion and mixing in the diffusion chamber, the gases enter the gas mixing chamber through the multiple through-holes on the first porous plate or the second porous plate for further mixing. The presence of the multiple through-holes increases the gas flow resistance, thereby reducing the gas flow rate, increasing the gas mixing time, and improving the gas mixing effect.

[0049] See also Figure 3 and Figure 4 , is a gas distribution box 20 in the second embodiment. This gas distribution box 20 also has an interior space 28 enclosed by a top wall 22, side walls 24, and a bottom wall 27. The gas distribution box 20 also includes an air inlet pipe 21 and an air outlet pipe 25. The arrangement of the air inlet pipe 21 and the air outlet pipe 25 in this embodiment is the same as in the above embodiment and will not be repeated here.

[0050] An annular air distribution plate 26 is disposed within the interior space 28, dividing the interior space 28 into a gas mixing chamber 282 and a diffusion chamber 281. Specifically, the air distribution plate 26, the sidewalls 24, the top wall 22, and the bottom wall 27 form the diffusion chamber 281, while the air distribution plate 26, the top wall 22, and the bottom wall 27 form the gas mixing chamber 282. The air distribution plate 26 is an annular plate-like structure having a plurality of through-holes 261. The air distribution plate 26 extends along the sidewalls 24, and the plate wall of the air distribution plate 26 has a certain thickness. Therefore, each through-hole 261 has a certain length, and the diameter of each through-hole 261 is smaller than the air inlet of the intake pipe 21.

[0051] The inner side of the air-distributing plate 26 is a mixing chamber 282, and the outer side is a diffusion chamber 281. The air inlet pipe 21 communicates with the diffusion chamber 281 through the mixing chamber 282, and the air outlet pipe 25 communicates with the mixing chamber 282 through the diffusion chamber 281. Gas entering the internal space 28 through the air inlet pipe 21 is first mixed in the mixing chamber 282, then enters the diffusion chamber 281 through the multiple through-holes 261 in the air-distributing plate 26. After the mixed gas diffuses within the diffusion chamber 281, it finally enters the corresponding connected reaction chamber through the four air outlet pipes 25.

[0052] Since the air uniforming plate 26 has multiple dispersed through holes 261, the gas in the mixing chamber 282 encounters a large flow resistance when entering the diffusion chamber 281, and the flow speed is slowed down, thereby prolonging the mixing time of the gas in the mixing chamber 282, making the gas more fully mixed in the mixing chamber 282, and improving the uniformity of gas mixing.

[0053] In this embodiment, the two air inlet pipes 21 are respectively provided on the top wall 22 and the bottom wall 27. When the gas enters the mixing chamber 282, the gas collides with each other up and down, thereby enhancing the gas mixing effect. In other embodiments, the air inlet pipe 21 can also be provided only on the top wall 22 or the bottom wall 27.

[0054] Similar to the above embodiment, a heater is provided on the side wall 24 to heat the internal space 28 so that the temperature in the internal space 28 reaches 120° C.-150° C., so that the gas in the internal space 28 is maintained in a gaseous state.

[0055] The interior space 28 is cylindrical with a circular cross-section. Two air inlet pipes 21 are located at the upper and lower sides of the interior space 28, respectively, and four air outlet pipes 25 are evenly spaced outside the interior space 28. An annular air distribution plate 26 divides the interior space 28 into an annular diffusion chamber 281 and a cylindrical mixing chamber 282. In other embodiments, the cross-section of the interior space 18 may also be a regular polygon.

[0056] Similar to the above embodiment, the top wall 22 and the side wall 24 , the side wall 24 and the bottom wall 27 , and the air distribution plate 26 and the top wall 22 and the bottom wall 27 are connected by welding or through sealing rings.

[0057] In other embodiments, the bottom wall 27 and the side wall 24 are integrally formed to form a groove; the top wall 22 and the air uniforming plate 26 are also integrally formed; the integrally formed top wall 22 and the air uniforming plate 26 are placed in the groove formed by the bottom wall 27 and the side wall 24, so that a mixing chamber 282 is formed between the air uniforming plate 26 and the bottom wall 27, and a diffusion chamber 281 is formed between the inner wall of the side wall 24 and the outer wall of the air uniforming plate 26; and sealing rings are provided on the contact surfaces between the top wall 22 and the side wall 24 and the contact surfaces between the air uniforming plate 26 and the bottom wall 27 to maintain the sealing of the internal space 18.

[0058] See also Figure 5 , is a gas distribution box 30 in the third embodiment. This third embodiment combines the first and second embodiments. The gas distribution box 30 has an interior space 18 enclosed by a top wall 12, side walls 14, and a bottom wall 17. A first porous plate 13 and a second porous plate 16 are disposed within the interior space 18. The first and second porous plates 13 and 16 divide the interior space 18 into three compartments: a first diffusion chamber 18, a second diffusion chamber 183, and the space enclosed by the side walls 14, the first porous plate 13, and the second porous plate 16. An annular gas distribution plate 19 is also disposed within the interior space 18. The gas distribution plate 19 has a plurality of through-holes 191. The gas distribution plate 19 is disposed on the inner side of the side walls 14, dividing the space enclosed by the side walls 14, the first porous plate 13, and the second porous plate 16 into a third diffusion chamber 184 and a gas mixing chamber 182'. The gas outlet pipe 15 is directly connected to the third diffusion chamber 184.

[0059] The gas enters the mixing chamber 182' through the first porous plate 13 and the second porous plate 16 for mixing. During this process, the air flow is blocked by the through holes of the porous plate, and the flow rate is slowed down, so that the mixing chamber 182' has a better mixing effect; then it enters the third diffusion chamber 184 through the multiple through holes 191 on the uniform air plate 19. Since the uniform air plate 19 increases the gas flow resistance on the path of the gas flowing to the outlet pipe 15, the mixing time of the gas in the mixing chamber 182' is increased, thereby obtaining more sufficient mixing and thus obtaining a better mixing effect.

[0060] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. After reading the above description, various modifications and alternatives to the present invention will be readily apparent to those skilled in the art. Therefore, the scope of protection of the present invention shall be defined by the appended claims.

Claims

1. A gas distribution box, characterized in that: include: an internal space enclosed by side walls, top walls, and bottom walls; an air intake pipe, the air intake pipe being in communication with the internal space; at least two air outlet pipes, the air outlet pipes being in communication with the internal space; a porous plate, the porous plate being arranged in the internal space and dividing the internal space into a communicating gas mixing chamber and a diffusion chamber; The air intake pipe is communicated with the air mixing chamber through the diffusion chamber.

2. The gas distribution box according to claim 1, wherein: The outer edge of the porous plate is arranged between the top wall and the side wall, and / or between the bottom wall and the side wall; the air inlet pipe is arranged on the top wall and / or the bottom wall.

3. The gas distribution box according to claim 1, wherein: The air outlet pipe is arranged on the side wall.

4. The gas distribution box according to claim 3, wherein: A heater is provided on the side wall.

5. The gas distribution box according to claim 1, wherein: The cross section of the internal space is circular or regular polygonal, the air inlet pipe is arranged on the upper side and / or lower side of the internal space, and the air outlet pipe is evenly arranged on the outer side of the internal space.

6. The gas distribution box according to claim 3, wherein: An annular air-distributing plate is provided on the inner side of the side wall.

7. The gas distribution box according to claim 2, wherein: The upper side and / or the lower side of the central area of ​​the porous plate is recessed toward the porous plate itself.

8. The gas distribution box according to claim 1, wherein: The inner side of the top wall and / or the bottom wall is recessed in a direction away from the inner space.

9. A vapor deposition device, characterized in that: include: at least two reaction chambers; The gas distribution box according to any one of claims 1 to 8, wherein the gas distribution box is located above the vapor deposition equipment; The gas outlet pipes of the gas distribution box are connected to the reaction chambers in a one-to-one correspondence.

10. A gas distribution box, characterized in that: include: an internal space enclosed by side walls, top walls, and bottom walls; an air intake pipe, the air intake pipe being in communication with the internal space; at least two air outlet pipes, the air outlet pipes being in communication with the internal space; an annular air-distributing plate, the air-distributing plate being arranged in the internal space and dividing the internal space into a communicating air mixing chamber and a diffusion chamber; The air outlet pipe is communicated with the air mixing chamber through the diffusion chamber.

11. The gas distribution box according to claim 10, wherein: The air inlet pipe is arranged on the top wall and / or the bottom wall; the air outlet pipe is arranged on the side wall.

12. The gas distribution box according to claim 11, wherein: A heater is provided on the side wall.

13. The gas distribution box according to claim 10, wherein: The top wall and the air homogenizing plate are integrally formed, and / or the side wall and the bottom wall are integrally formed.

14. The gas distribution box according to claim 10, wherein: The cross section of the internal space is circular or regular polygonal, the air inlet pipe is arranged on the upper side and / or lower side of the internal space, and the air outlet pipe is evenly arranged on the outer side of the internal space.

15. The gas distribution box according to claim 10, wherein: The air distribution plate extends along the side wall.

16. A vapor deposition device, characterized in that: include: at least two reaction chambers; The gas distribution box according to any one of claims 10 to 15, wherein the gas distribution box is located above the vapor deposition equipment; The gas outlet pipes of the gas distribution box are connected to the reaction chambers in a one-to-one correspondence.

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