Semiconductor processing device and gas transmission system thereof

Abstract

The utility model provides a semiconductor processing device and a gas transmission system thereof, and relates to the technical field of semiconductor preparation. A temperature control assembly is arranged on the periphery of a gas transmission assembly, and the temperature control assembly comprises an armoring structure arranged on the periphery of the gas transmission assembly and heating pieces arranged in the armoring structure and symmetrically arranged relative to the gas transmission assembly. According to the arrangement, the armored structure is adopted to cover a gas transmission pipeline and components from the reaction source container to the semiconductor processing cavity in the whole process, and controllable heating pieces can be embedded in all sections of core temperature control areas and the armored structure, for example, an armored shell is heated by controlling the heating pieces, and then heat conduction is conducted by the armored shell; and the gas transmission pipeline and components of the gas transmission assembly are uniformly heated, so that the reaction source gas is kept in a gas state and corresponding saturated vapor pressure in a transmission process.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor processing device and a gas transmission system thereof. Background Art

[0002] In semiconductor atomic layer deposition equipment, certain specific reaction sources (such as MoCl2O2 (molybdenum dichloride)) exist in solid form at room temperature. If they are to be transported from the reaction source container to the semiconductor processing chamber for reaction, the solid reaction source must first be heated and its saturated vapor pressure at the corresponding temperature is used to convert the solid reaction source into a gaseous state, thereby transporting the reaction source.

[0003] Since the solid reaction source is converted into gas through heating, the stability of the transmitted gas is difficult to maintain, and the reaction source may re-condense due to temperature changes during the transmission process, making it impossible to control the amount of reaction source transmitted to the semiconductor processing chamber, affecting the film quality.

[0004] In existing equipment, because the solid-state reaction source is far from the semiconductor processing chamber, a common approach is to use a heating pack to wrap the intermediate pipes and components from the reaction source container to the semiconductor processing chamber to prevent the reaction source quantity from losing control due to temperature drops during transmission. However, the heating pack cannot evenly and completely cover the intermediate pipes and components between the reaction source container and the semiconductor processing chamber, resulting in poor temperature uniformity at joints or corners. In addition, the temperature conduction and control errors of the heating pack itself are large, making it difficult to ensure the stability and repeatability of temperature control. Utility Model Content

[0005] In order to alleviate, mitigate or eliminate the above-mentioned technical problems, the present application provides a semiconductor processing device and a gas transmission system thereof to improve the stability of gas transmission.

[0006] In a first aspect, the present application provides a gas transmission system for a semiconductor processing device, comprising a gas transmission component and a temperature control component, wherein:

[0007] The gas delivery assembly includes a gas delivery pipeline, which is connected to the reaction source container and the semiconductor processing chamber, and is used to deliver the reaction source to the semiconductor processing chamber;

[0008] The temperature control component includes an armored structure and a heating element. The armored structure includes an armored shell made of heat-conducting material. The armored shell is arranged on the periphery of the gas transmission component and is arranged in sections along the gas transmission pipeline. Each section of the armored shell is fixedly connected to each other by a connecting piece; the heating element is arranged in the armored structure and is symmetrically arranged about the gas transmission component.

[0009] In a possible implementation, the gap between the armored shell and the gas delivery component is set to 0.5 mm-1 mm.

[0010] In a possible implementation, the gap between the heating element and the armored shell is set to 0 mm-0.8 mm.

[0011] In a possible implementation, the temperature control assembly further includes a non-heating portion connected to an end portion of the heating element, and the non-heating portion is led from the interior of the armored shell to the exterior of the armored shell.

[0012] In a possible implementation, the gas delivery assembly further includes a gas collecting tank located on the gas delivery pipeline, and the gas collecting tank is provided with a pressure measuring instrument.

[0013] In one possible implementation, the armored shell around the gas collecting tank includes an upper cover portion and a lower cover portion that are symmetrically arranged relative to the cross-section of the gas collecting tank, and heating elements are respectively provided in the upper cover portion and the lower cover portion, and the non-heating parts connected to the heating elements of the upper cover portion and the lower cover portion are staggered in their lead-out positions in the armored shell.

[0014] In a possible implementation, the gas delivery assembly further includes a flow controller located on the gas delivery pipeline, the flow controller is located between the reaction source container and the gas collecting tank, and the flow controller is a high-temperature resistant device.

[0015] In one possible implementation, the temperature control component includes a first section located between the semiconductor processing chamber and the gas collecting tank, a second section located on the periphery of the gas collecting tank, a third section located between the gas collecting tank and the flow controller, and a fourth section located on the periphery of the flow controller.

[0016] In one possible implementation, the armored shell is a shell made of one of gold, silver, copper, aluminum, graphene, silicon carbide, and aluminum nitride.

[0017] In a second aspect, the present application provides a semiconductor processing device, comprising a reaction source container for containing a reaction source, a semiconductor processing chamber, and the gas transmission system described in the first aspect.

[0018] Compared with the prior art, this application has the following advantages:

[0019] The application sets a temperature control assembly on the periphery of the gas delivery assembly, which comprises an armored structure arranged on the periphery of the gas delivery assembly and a heating element arranged in the armored structure and symmetrically arranged relative to the gas delivery assembly. According to the above arrangement, the armored structure is used to cover the gas delivery pipeline and components from the reaction source container to the semiconductor processing chamber. In the core temperature control area, the controllable heating element can be embedded in the armored shell. For example, the armored shell is heated by controlling the heating element, and then the armored shell conducts heat to uniformly heat the gas delivery pipeline and components of the gas delivery assembly, so as to ensure that the reaction source gas remains gaseous and the corresponding saturated vapor pressure during transmission.

[0020] According to the temperature control assembly of the application, the armored shell formed by machining or other methods can be made into armored shells meeting different accuracy requirements according to requirements. For example, the gap between the heating element and the armored shell, and the gap between the armored shell and the heated body, can be accurately controlled according to the specific design. Through the arrangement of the above gap, the contact area of the heating element and the armored shell can be accurately controlled, so that the gap of the armored shell at each feature of the heated body remains consistent, to realize the heating uniformity of the armored structure, achieve the purpose of eliminating cold spots, improve the heating uniformity of the gas delivery assembly, reduce the temperature fluctuation of the reaction source gas during transmission, make the gas transmission more stable, and thus improve the process stability.

[0021] In addition, on the basis of heating the gas delivery assembly by the armored structure and the heating element, the temperature control assembly of the application further increases the high-temperature-resistant flow controller, further accurately controls the amount of reaction source, and can quickly and conveniently adjust and control the flow according to different processes, reduces the uncertainty of manual control, and reduces the debugging cost. BRIEF DESCRIPTION OF DRAWINGS

[0022] The accompanying drawings are included to provide a further understanding of the application, and they are collected and constitute a part of the application. The drawings illustrate embodiments of the application and, together with the specification, serve to explain the principles of the application. In the drawings:

[0023] Figure 1 is a structural schematic diagram of a semiconductor processing device provided by an embodiment of the application;

[0024] Figure 2 is a three-dimensional schematic diagram of a gas transmission system of a semiconductor processing device provided by an embodiment of the application;

[0025] Figure 3 is a sectional view schematic diagram of a gas transmission system of a semiconductor processing device provided by an embodiment of the application;

[0026] Figure 4This is a structural diagram of the non-heat-generating portion of a temperature control component provided in an embodiment of the present application. DETAILED DESCRIPTION

[0027] To more clearly illustrate the technical solutions of the embodiments of this application, the following is a brief introduction to the drawings required for describing the embodiments. Obviously, the drawings described below are merely examples or embodiments of this application. Those skilled in the art can apply this application to other similar scenarios based on these drawings without inventive effort. Unless otherwise apparent from the context or otherwise noted, the same reference numerals in the figures represent the same structure or operation.

[0028] As used herein, unless the context clearly indicates otherwise, the terms "a," "an," "an," and / or "the" are not intended to refer to the singular but may include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements specifically identified, and these steps and elements do not constitute an exclusive list. A method or apparatus may also include other steps or elements.

[0029] Unless otherwise specified, the relative arrangement of the parts and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present application. Meanwhile, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to actual proportional relationships. Technology, methods and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, methods and equipment should be considered as a part of the specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments can have different values. It should be noted that similar numbers and letters represent similar items in the following drawings, and therefore, once an item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0030] In the description of this application, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "horizontal, vertical, vertical, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of this application; the directional words "inside and outside" refer to the inside and outside relative to the outline of each component itself.

[0031] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship of a device or feature to other devices or features as shown in the figures. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figures. For example, if the device in the drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0032] In addition, although the terms used in this application are selected from commonly known and commonly used terms, some of the terms mentioned in this specification may be selected by the applicant at his or her discretion, and their detailed meanings are explained in the relevant parts of the description herein. In addition, it is required that this application be understood not only by the actual terms used, but also by the meaning implied by each term.

[0033] It should be understood that when a component is referred to as being “on,” “connected to,” or “contacting” another component, it can be directly on, connected to, or contacting the other component, or intervening components may be present. In contrast, when a component is referred to as being “directly on,” “directly connected to,” or “directly contacting” another component, there are no intervening components present.

[0034] Please refer to Figures 1-3 , Figure 1 is a schematic structural diagram of a semiconductor processing device provided in an embodiment of the present application. Figure 2 1 is a three-dimensional schematic diagram of a gas transmission system for a semiconductor processing device provided in an embodiment of the present application. Figure 3 1 is a cross-sectional schematic diagram of a gas transmission system for a semiconductor processing device provided in an embodiment of the present application. The semiconductor processing device includes a reaction source container 101 and a semiconductor processing chamber 102. The reaction source contained in the reaction source container 101 is input into the semiconductor processing chamber 102 through the gas transmission system. In some embodiments, the reaction source container 101 can be placed in a cabinet 109 and heated by a heating element 110 in the cabinet 109. It should be understood that the semiconductor processing device may also include other components not shown in FIG. Figure 1 Components shown in, such as valves, vacuum pumps, etc.

[0035] The gas delivery system includes a gas delivery assembly and a temperature control assembly. The gas delivery assembly includes a gas delivery line 103 for delivering the reaction source to the semiconductor processing chamber 102. The gas delivery line 103 connects the reaction source container 101 to the semiconductor processing chamber 102. In some embodiments, the gas delivery assembly also includes a gas collecting tank 106 located on the gas delivery line 103, which is equipped with a pressure measuring instrument 107. Before the gaseous reaction source enters the semiconductor processing chamber 102, it is first heated to a predetermined pressure within the gas collecting tank 106 before entering the semiconductor processing chamber 102, thereby improving the stability of the reaction source entering the semiconductor processing chamber 102.

[0036] The pressure measuring instrument 107 can be an instrument for measuring pressure, such as a pressure gauge. The pressure measuring instrument 107 is used to monitor the pressure in the gas collecting tank 106, and no feedback adjustment is required. In some embodiments, the gas delivery component also includes a flow controller 108 located on the gas delivery pipeline 103. The flow controller 108 can be a mass flow controller or a pressure flow controller that is resistant to high temperatures (such as above 150°C). The flow controller 108 is located between the reaction source container 101 and the gas collecting tank 106. The flow controller 108 is used to control the amount of reaction source in the gas collecting tank 106, thereby achieving controllability of the amount of reaction source entering the semiconductor processing chamber 102 and improving the stability of the reaction source entering the semiconductor processing chamber 102.

[0037] In actual application, the solid reaction source in the reaction source container 101 is heated by the heating element 110 in the cabinet 109, so that the reaction source is converted from a solid state to a gaseous state. The gaseous reaction source is transmitted outward through the gas transmission line 103 and passes through the flow controller 108. Before entering the semiconductor processing chamber 102, the reaction source is gathered in the gas collecting tank 106 between the flow controller 108 and the semiconductor processing chamber 102. After the reaction source flows for a period of time, a certain pressure is formed in the gas collecting tank 106. If the pressure value measured by the pressure measuring instrument 107 is the same as the preset pressure value, the valve between the gas collecting tank 106 and the semiconductor processing chamber 102 is opened to allow the reaction source gas to enter the semiconductor processing chamber 102. If the pressure in the gas collecting tank 106 does not reach or exceed the preset pressure within the set time, the flow rate of the reaction source flowing into the gas collecting tank 106 is controlled by the flow controller 108 to achieve control of the reaction source usage.

[0038] The prior art uses a heating bag to wrap and heat the gas delivery assembly to prevent the reaction source amount from being out of control due to temperature drop during transmission. The heating bag is composed of a flexible heating wire and a heat insulation coating layer, and then is manually wound according to the required pipeline and components, and a thermocouple is installed at each measuring point to monitor the temperature of the heating bag. However, since manual winding is required and the heating wire is flexible, on the one hand, the repeatability is not easy to guarantee, and on the other hand, the contact between the heating wire on the wrapping and the heated parts (such as the gas delivery pipeline and components) cannot be controlled, so that the heating power of the same heating bag is different between different devices, and needs to be repeatedly adjusted according to the actual situation, which reduces the convenience of installation and adjustment to a certain extent.

[0039] With reference to the foregoing Figures 1-3 The temperature control assembly provided by the embodiments of the present application includes an armored structure and a heating element 105, and the heating element 105 is arranged in the armored structure. The armored structure includes an armored shell 104 made of a heat-conducting material and arranged outside the periphery of the gas delivery assembly. The material of the armored shell 104 can be gold, silver, copper, aluminum, graphene, silicon carbide, aluminum nitride, etc., which have good heat-conducting performance and light weight. For example, the armored shell 104 is an aluminum shell, and the present application does not limit the material of the armored shell 104. By covering the gas delivery assembly between the reaction source container 101 and the semiconductor processing chamber 102 with the armored shell 104, a controllable heating element 105 is arranged in the armored structure in each core temperature control area, the armored shell 104 is heated by controlling the heating element 105, and then the armored shell 104 conducts heat to uniformly and fully heat the gas delivery assembly, so as to ensure that the reaction source remains gaseous and has a corresponding saturated vapor pressure during transmission.

[0040] In some embodiments, the armored shell 104 is arranged in sections along the gas delivery pipeline 103, and each section of the armored shell 104 is fixedly connected to each other by a connecting piece. For example, each section of the armored shell 104 is composed of two parts, and the two parts of the shell are fixedly connected by a connecting piece and a screw after wrapping the gas delivery assembly from both sides. In some embodiments, the connecting piece can be preferably made of the same material as the armored shell 104, and the present application does not limit this.

[0041] Existing heating packs are wrapped around the heated part in a winding manner, which can usually only meet the heating uniformity of some regularly shaped heated parts (such as cylinders, cubes, spheres, etc.). If the heated part has a complex appearance (such as the bend of a special gas pipeline, a diaphragm valve block, etc.), the form of the heating pack may not be able to achieve uniform wrapping at the special-shaped features of the heated part, thereby generating a temperature difference with the rest of the wrapped area, causing the heated part to form a cold spot. The armored structure heating method of the embodiment of the present application can be machined according to the specific external dimensions of the heated part to adapt to various different heated parts. At the same time, the machined armor shell can meet the preset accuracy requirements. For example, the gap between the armor shell 104 and the gas transmission component and the gap between the heating element 105 and the armor shell 104 can be controlled, the contact area between the heating element 105 and the armor shell 104 can be controlled, and the gap between the armor shell 104 and the various features of the heated part can be ensured to be consistent, thereby improving heating uniformity and eliminating cold spots. In some embodiments, the gap between the armored housing 104 and the gas delivery assembly is set to 0.5 mm-1 mm, such as 0.5 mm, 0.7 mm, 0.9 mm, or 1 mm, etc. Further, in some embodiments, the gap between the heating element 105 and the armored housing 104 is set to 0 mm-0.8 mm, such as 0 mm, 0.2 mm, 0.5 mm, or 0.8 mm, etc.

[0042] The heating element 105 is arranged in the armored structure according to the direction of the gas pipeline 103 and the layout of the components. For example, a groove is provided in the armored shell 104, and the heating element 105 is provided in the groove and is embedded in the armored shell 104 through an interference fit. For another example, the heating element 105 is fixed to the armored shell 104 through a connecting component. This can ensure the gap between the heating element 105 and the heated parts (such as gas pipelines and components) each time it is installed, thereby improving the installation repeatability, and the heat of the heating element 105 can be more evenly transferred to the heated parts through the armored shell 104, thereby improving the temperature uniformity everywhere. In addition, since the positions of the heating element 105 and the heated parts are relatively fixed, it is easier to repeat the installation and debugging process than to wind it manually. The heating element 105 can be a heating wire, etc., which is an element that can heat the armored shell 104.

[0043] In some embodiments, the heating element 105 is symmetrically arranged about the gas delivery assembly to further ensure heating uniformity. For example, the heating element 105 includes one or more heating elements symmetrically arranged about the gas delivery assembly, such as a heating element arranged around the gas delivery assembly, or two heating wires located on both sides of the gas delivery assembly, etc. Figure 3 shown.

[0044] In some embodiments, the heating elements 105 provided in the armored structure can be segmented according to needs, and the heating power of each heating element 105 can be controlled segment by segment, so that the temperature of different areas of the gas transmission component can be controlled separately.

[0045] In some embodiments, the armored shell 104 can also be segmented according to the core components and the parts where cold spots may occur, and a heating element 105 can be embedded in each segment of the armored shell 104. The heating element 105 of each segment can be controlled in segments to achieve different temperature gradients to heat the reaction source in the gas pipeline 103, making the state of the reaction source more stable.

[0046] For example, the temperature control assembly includes a first section located between the semiconductor processing chamber 102 and the gas collecting tank 106, a second section located outside the gas collecting tank 106, a third section located between the gas collecting tank 106 and the flow controller 108, and a fourth section located outside the flow controller 108. Each section of the armored casing 104 is fixedly connected along the direction of the gas pipeline by connectors and screws.

[0047] In some embodiments, the armored housing 104 around the flow controller 108 is only provided on one side of the flow controller 108 structure containing the pipeline, such as Figures 2-3 As shown, the side without the armored housing is for the actuator and other components. In other embodiments, an armored housing may be provided on the periphery of the flow controller 108 to enclose the flow controller 108 as a whole in the armored housing, and this application does not limit this.

[0048] In some embodiments, the heaters in the armored casing 104 around the flow controller 108 are fixed to the armored casing 104 via connectors, while the heaters 105 in the other sections are embedded in the armored casing 104 via grooves within the armored casing 104. It should be understood that the above is merely an example of a method for fixing the heater 105, and this application does not limit the method for fixing the heater 105.

[0049] The flow controller 108 and the reaction source container 101 can be connected via a gas feedthrough 112 containing a pipeline. The gas feedthrough 112 includes a flange, connecting components, etc. that are fixed to the reaction source container 101 or the cabinet 109, and can be formed integrally. The armored housing 104 surrounding the flow controller 108 is fixedly connected to the upper portion of the gas feedthrough 112. In other embodiments, a gas pipeline is also connected between the flow controller 108 and the reaction source container 101, and the armored housing 104 is also provided around the periphery of the gas pipeline.

[0050] The end of the heating element 105 is also connected to a non-heating portion 111 that is led from the inside of the armored shell 104 to the outside of the armored shell 104. For example, the end of each heating wire is connected to the non-heating portion 111 that is led out of the armored shell 104, thereby achieving uniform heating of the armored shell 104. A portion of the non-heating portion 111 is located inside the armored shell 104, led out of the opening of the armored shell 104 to the outside of the armored shell 104, and fixedly connected to the armored shell 104 at the opening. Please refer to Figure 4 The non-heating portion 111 includes an insulating hose 121 and a wire 122. The insulating hose 121 is wrapped around a portion of the outer periphery of the wire 122, leading the wire 122 to the outside of the armored shell 104. It should be understood that the non-heating portion 111, as part of the heating wire, is a standard component in this field, and the remaining details are not repeated here.

[0051] In some embodiments, the armored shell around the gas collecting tank 106 includes an upper cover portion and a lower cover portion symmetrically arranged relative to the cross-section of the gas collecting tank 106. Figure 3 The upper and lower covers are provided with heating elements respectively, and the non-heating parts 111 connected to the heating elements of the upper and lower covers are staggered in their lead-out positions in the armored shell. Figure 2 As shown, it is to avoid the occurrence of cold spots in the gas collecting tank 106 area covered by the overlapping area due to the overlap of the non-heating area. It should be noted that the cross section of the gas collecting tank 106 mentioned here refers to the cross section cut along the gas flow direction of the gas pipeline and the center line of the gas collecting tank 106, as shown in FIG. Figure 3 shown.

[0052] The basic concepts have been described above. It will be apparent to those skilled in the art that the above disclosure is merely illustrative and does not constitute a limitation of this application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and amendments to this application. Such modifications, improvements, and amendments are suggested in this application and remain within the spirit and scope of the exemplary embodiments of this application.

[0053] At the same time, this application uses specific terms to describe the embodiments of this application. For example, "one embodiment," "an embodiment," and / or "some embodiments" refer to a certain feature, structure, or characteristic related to at least one embodiment of this application. Therefore, it should be emphasized and noted that "one embodiment," "an embodiment," or "an alternative embodiment" mentioned twice or multiple times in different locations in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of this application may be appropriately combined.

[0054] Similarly, it should be noted that, in order to simplify the description of the present disclosure and thus facilitate understanding of one or more embodiments, the foregoing descriptions of the embodiments of the present disclosure sometimes combine multiple features into a single embodiment, figure, or description thereof. However, this disclosure method does not mean that the subject matter of the present disclosure requires more features than those mentioned. In fact, the features of an embodiment may be fewer than all the features of the individual embodiments disclosed above.

[0055] In some embodiments, numbers are used to describe the quantity of components and attributes. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise stated, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification are approximate values, which may change according to the required characteristics of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of the present application are approximate values, in specific embodiments, the settings of such numerical values ​​are as accurate as possible within the feasible range.

[0056] Although the present application has been described with reference to the current specific embodiments, ordinary technicians in this technical field should recognize that the above embodiments are only used to illustrate the present application, and various equivalent changes or substitutions can be made without departing from the spirit of the present application. Therefore, as long as the changes and modifications to the above embodiments are within the scope of the essential spirit of the present application, they will fall within the scope of the present application.

Claims

1. A gas delivery system for a semiconductor processing device, characterized in that: It includes gas transmission components and temperature control components, among which, The gas delivery assembly includes a gas delivery pipeline, which is connected to the reaction source container and the semiconductor processing chamber, and is used to deliver the reaction source to the semiconductor processing chamber; The temperature control component includes an armored structure and a heating element. The armored structure includes an armored shell made of heat-conducting material. The armored shell is arranged on the periphery of the gas transmission component and is arranged in sections along the gas transmission pipeline. Each section of the armored shell is fixedly connected to each other by a connecting piece; the heating element is arranged in the armored structure and is symmetrically arranged about the gas transmission component.

2. The gas transmission system according to claim 1, wherein: The gap between the armored shell and the gas delivery component is set to 0.5mm-1mm.

3. The gas transmission system according to claim 1, wherein: The gap between the heating element and the armored shell is set to 0mm-0.8mm.

4. The gas transmission system according to claim 1, wherein: The temperature control assembly further includes a non-heating portion connected to the end of the heating element, and the non-heating portion is led from the inside of the armored shell to the outside of the armored shell.

5. The gas transmission system according to claim 4, wherein: The gas delivery assembly further comprises a gas collecting tank located on the gas delivery pipeline, and a pressure measuring instrument is provided on the gas collecting tank.

6. The gas transmission system according to claim 5, wherein: The armored shell around the gas collecting tank includes an upper cover portion and a lower cover portion symmetrically arranged relative to the cross-section of the gas collecting tank, and heating elements are respectively arranged in the upper cover portion and the lower cover portion, and the non-heating parts connected to the heating elements of the upper cover portion and the lower cover portion are staggered in their lead-out positions in the armored shell.

7. The gas transmission system according to claim 5, wherein: The gas delivery assembly further includes a flow controller located on the gas delivery pipeline. The flow controller is located between the reaction source container and the gas collecting tank, and is a high-temperature resistant device.

8. The gas transmission system according to claim 7, wherein: The temperature control assembly includes a first section located between the semiconductor processing chamber and the gas collecting tank, a second section located around the gas collecting tank, a third section located between the gas collecting tank and the flow controller, and a fourth section located around the flow controller.

9. The gas transmission system according to claim 1, wherein: The armored shell is a shell made of one of gold, silver, copper, aluminum, graphene, silicon carbide, and aluminum nitride.

10. A semiconductor processing device, characterized in that: The invention comprises a reaction source container for containing a reaction source, a semiconductor processing chamber and a gas transmission system according to any one of claims 1 to 9.

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