Resonator and electronic device
By setting up symmetrical cantilever beams and open hole structures in the resonator, combined with support beams and multi-layer electrodes, fast and reliable mode switching and frequency tuning are achieved, solving the tuning stability and efficiency problems of existing resonators and making it suitable for multi-scenario applications.
Patent Information
- Application Number
- CN202422917600.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-27
- Publication Date
- 2025-10-14
- Estimated Expiration
- 2034-11-27
AI Technical Summary
Existing resonator tuning methods have problems such as poor real-time tuning effect, insufficient stability and accuracy, large structural losses, and high costs, making it difficult to achieve fast, reliable, and simple modal tunability.
A resonator is designed by symmetrically arranging cantilever beams on a substrate and opening holes in the cantilever beams. The cantilever beams are combined with a support beam and a multi-layer electrode structure to achieve stiffness change and mode switching of the cantilever beams. The frequency is fine-tuned using a metal tuning layer to enhance energy storage and resonance stability.
It achieves fast and reliable mode switching of the resonator, reduces structural losses, improves frequency stability and electro-mechanical conversion efficiency, and is suitable for multi-scenario applications.
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Figure CN223437069U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of resonance technology, and in particular to a resonator and an electronic device. Background Art
[0002] Resonators play a crucial role in the fields of microelectromechanical systems (MEMS) and sensors. Traditional resonators typically consist of a single structure, with their resonant frequency primarily determined by fixed parameters such as material and geometry. Once the geometry is determined, the excitation modes of such resonators are also relatively fixed and single, limiting their application scenarios. To address this issue, researchers have proposed a variety of tunable resonator solutions, including capacitive tuning, thermal tuning, mechanical tuning, and electromagnetic tuning.
[0003] However, the applicant found that the real-time tuning effect of capacitive tuning is poor, the stability and accuracy of thermal tuning are insufficient, the structural loss of mechanical tuning is large, the long-term stability is insufficient, and the complexity and cost of electromagnetic tuning are high. Therefore, it is urgent to design a fast, reliable and simple modal tunable resonant structure. Utility Model Content
[0004] The present application provides a resonator and an electronic device. The resonator has a small structural volume and can flexibly switch between in-plane mode and out-of-plane mode.
[0005] In order to achieve the above objectives, this application provides the following technical solutions:
[0006] A first aspect of the present application provides a resonator, comprising: a substrate, on which at least two cantilever beams are provided, the two cantilever beams are symmetrically arranged relative to the center of the substrate, and a first opening is provided on the cantilever beam.
[0007] In a possible implementation, there are four cantilever beams, and the four cantilever beams are symmetrically arranged relative to the center of the substrate, and each of the cantilever beams is provided with the first opening.
[0008] In a possible implementation, a support beam is provided between two adjacent cantilever beams, and the support beam is connected to the substrate.
[0009] In a possible implementation, the angle between the support beam and the cantilever beam is 45 degrees.
[0010] In one possible implementation, a bottom electrode, a piezoelectric layer, and a top electrode are stacked in sequence on the substrate, the cantilever beam is arranged on the substrate, the bottom electrode, the piezoelectric layer, and the top electrode, and the first opening passes through the substrate, the bottom electrode, the piezoelectric layer, and the top electrode.
[0011] In a possible implementation, the resonator has a second opening, which passes through the bottom electrode, the piezoelectric layer and the top electrode.
[0012] In a possible implementation, the second opening includes a center hole and a peripheral hole, the center hole passing through the substrate, the bottom electrode, the piezoelectric layer and the top electrode.
[0013] The peripheral hole is located at the periphery of the center hole, and the peripheral hole passes through the bottom electrode, the piezoelectric layer and the top electrode.
[0014] In a possible implementation, the top electrode is provided with a metal tuning layer on the side away from the substrate, the metal tuning layer is located on the top layer of the cantilever beam, and the metal tuning layer is made of silver, copper, gold or palladium.
[0015] In a possible implementation, the distance between the outermost sides of the two opposite cantilever beams is less than or equal to 1.2 mm.
[0016] The resonator provided in the first aspect of the present application has at least the following beneficial effects:
[0017] By arranging two cantilever beams on the substrate in a central symmetry, and arranging a first opening on the cantilever beam, not only the stiffness of the cantilever beam can be changed, but also the in-plane mode and the out-of-plane mode of the cantilever beam can be switched by changing the shape and the opening position of the first opening. At the same time, the substrate structure between the cantilever beams can provide support for the cantilever beams, and can also couple the cantilever beams, so as to store a part of the energy lost by the vibration of the cantilever beams when the cantilever beams resonate.
[0018] The second aspect of the present application provides an electronic device, which includes the resonator provided in any one of the technical solutions.
[0019] The electronic device provided in the second aspect of the present application has all the beneficial effects of the resonator provided in the first aspect of the present application, which will not be described here. BRIEF DESCRIPTION OF DRAWINGS
[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed in the embodiments or the prior art description will be briefly introduced as follows. Obviously, the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without creative labor.
[0021] Figure 1 The overall structure schematic diagram of the resonator provided in the embodiments of the present application;
[0022] Figure 2 The overall structure schematic diagram of the resonator provided in the embodiments of the present application;Figure 1 A top view structural schematic diagram of the resonator;
[0023] Figure 3 For Figure 1 A side view structural schematic diagram of the resonator;
[0024] Figure 4 An in-plane vibration mode diagram of the resonator provided by the embodiment of the present application at 1MHz;
[0025] Figure 5 An out-of-plane vibration mode diagram of the resonator provided by the embodiment of the present application at 19.647MHz.
[0026] Explanation of reference signs:
[0027] 100, substrate;
[0028] 110, cavity;
[0029] 200, cantilever beam;
[0030] 210, first opening;
[0031] 300, support beam;
[0032] 400, bottom electrode;
[0033] 500, piezoelectric layer;
[0034] 600, top electrode;
[0035] 700, second opening;
[0036] 710, center hole; 720, circumferential hole;
[0037] 800, metal tuning layer.
[0038] Through the above drawings, the specific embodiments of the present application have been shown, and will be described in more detail hereinafter. These drawings and written descriptions are not intended to limit the scope of the concept of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION
[0039] As described in the background, tunable resonators play an important role in the field of micro-electro-mechanical systems and sensors, and in the related art, there are various tuning methods for resonators, including capacitive tuning, thermal tuning, mechanical tuning and electromagnetic tuning. However, the applicant finds that the real-time tuning effect of capacitive tuning is not good, the stability and accuracy of thermal tuning are insufficient, the structural loss of mechanical tuning is large, the long-term stability is insufficient, and the complexity and cost of electromagnetic tuning are high.
[0040] Among them, the applicant finds that the main reason for the above problems is that:
[0041] The range of capacitive tuning is limited, and the speed of capacitive change is slow, which affects real-time tuning effect. The complexity and manufacturing difficulty of the capacitive tuning structure are high, which limits its wide application. Thermal tuning has a large tuning range, but its energy consumption is high, the response speed is slow, and thermal noise may affect the stability and accuracy of the resonator. Mechanical tuning can achieve a large range of frequency adjustment, but the wear and fatigue of the mechanical movement part limit its long-term stability and reliability, especially in high-frequency and high-precision applications, the implementation of mechanical tuning is more difficult. Although the electromagnetic tuning is fast, it needs a complex electromagnetic control system, which increases the design and manufacturing cost, and the system complexity is high.
[0042] It should be noted that the variable capacitor changes the resonant frequency of the resonator. By changing the capacitance value, the resonant frequency can be adjusted within a certain range. Thermal tuning changes the physical properties of the resonator material, such as Young's modulus, by heating or cooling the resonator material to achieve frequency tuning. Mechanical tuning adjusts the frequency of the resonator by changing the mechanical structure, such as stretching, compression or bending. And electromagnetic tuning uses electromagnetic fields to act on the resonator to achieve frequency tuning through Lorentz force or magnetostriction effect.
[0043] Therefore, it is important to propose a fast, reliable and simple mode-tunable resonator structure for multi-scene application of resonators.
[0044] In view of the above technical problems, the embodiment of the present application provides a resonator, which comprises a substrate 100, at least two cantilever beams 200 are arranged on the substrate 100, the two cantilever beams 200 are symmetrically arranged with respect to the center of the substrate 100, and a first opening 210 is arranged on the cantilever beam 200. Not only the stiffness of the cantilever beam can be changed, but also the in-plane mode and out-of-plane mode of the cantilever beam can be switched by changing the shape and opening position of the first opening. At the same time, the substrate structure between the cantilever beams can provide support for the cantilever beams, and can also couple the cantilever beams, so as to store a part of the energy lost by the vibration of the cantilever beams when the cantilever beams resonate.
[0045] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present application more apparent and easy to understand, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor are within the scope of protection of the present application.
[0046] Reference Figures 1 to 5 The resonator provided by the embodiment of the present application comprises a substrate 100, at least two cantilever beams 200 are arranged on the substrate 100, the two cantilever beams 200 are symmetrically arranged with respect to the center of the substrate 100, and a first opening 210 is arranged on the cantilever beam 200.
[0047] In this way, by arranging two cantilever beams 200 symmetrically along the center on the substrate 100 and arranging a first opening 210 on the cantilever beam 200, not only the stiffness of the cantilever beam 200 can be changed, but also the structural damping and energy distribution of the resonator can be changed, and the in-plane mode and out-of-plane mode can be stimulated. The in-plane mode and out-of-plane mode of the cantilever beam 200 can be switched by changing the shape and opening position of the first opening 210. At the same time, the substrate 100 structure between the cantilever beams 200 can provide support for the cantilever beams 200, and can also couple the cantilever beams 200, and store a portion of the energy lost by the vibration of the cantilever beam 200 when the cantilever beam 200 resonates.
[0048] For example, the cantilever beam 200 may be formed by etching the substrate 100 , leaving the cavity 110 on the substrate.
[0049] It is further understood that by opening a hole in the cantilever beam 200 to change its stiffness, the shape and position of the first opening 210 will affect the local stiffness of the cantilever beam 200. The in-plane mode (vibration within the plane) and the out-of-plane mode (vibration perpendicular to the plane) of the cantilever beam 200 are different vibration forms. By precisely designing the shape and position of the first opening 210, it is possible to selectively enhance or suppress these two modes. Certain hole shapes and positions may increase the in-plane stiffness, thereby making the in-plane mode dominant; while other designs may reduce the in-plane stiffness and enhance the out-of-plane mode.
[0050] For example, the first opening 210 is an elliptical hole, which is located along the length direction of the cantilever beam 200, close to the center side of the substrate 100, and the long axis of the elliptical hole is parallel to the length direction of the cantilever beam 200. Material is removed without significantly reducing the in-plane stiffness, thereby enhancing the in-plane mode. In another example, the first opening 210 is a diamond hole, which is located on the side of the cantilever beam 200 away from the substrate 100. The long diagonal of the diamond hole is parallel to the width direction of the cantilever beam 200, which can significantly reduce the in-plane stiffness while enhancing the out-of-plane mode.
[0051] In some embodiments, there are four cantilever beams 200 , which are symmetrically arranged relative to the center of the substrate 100 , and each of the cantilever beams 200 is provided with the first opening 210 .
[0052] In this configuration, four cantilever beams 200 are symmetrically arranged relative to the center of the substrate 100, which can further improve the vibration efficiency of the resonator. Moreover, the resonator body of the four cantilever beams 200 structure reduces the energy leakage of the resonator and improves the device quality factor (Q).
[0053] Furthermore, the shape of the first opening 210 is rectangular, triangular or diamond-shaped, and the shapes of the first opening 210 on each cantilever beam 200 can be the same or different. The first opening 210 can be opened in the middle of the cantilever beam 200, or can be located on a side close to the center of the substrate 100. The first opening 210 can also be opened on a side of the cantilever beam 200 away from the center of the substrate 100.
[0054] In some embodiments, a support beam 300 is further provided between two adjacent cantilever beams 200, and the support beam 300 is connected to the substrate 100. Exemplarily, the support beam 300 can be formed by etching a multilayer structure including a stacked substrate 100, a bottom electrode 400, a piezoelectric layer 500 and a top electrode 600, that is, the support beam 300 structure is etched between two adjacent cantilever beams 200. In other words, the cantilever beam 200 is arranged on the substrate 100, the bottom electrode 400, the piezoelectric layer 500 and the top electrode 600, and the support beam 300 is only arranged on the substrate 100.
[0055] Furthermore, the length of the support beam 300 in its own extension direction is smaller than the length of the cantilever beam 200 along its own extension direction. Furthermore, the length of the support beam 300 is 158-168 μm. For example, the length of the support beam 300 is 158 μm, or the length of the support beam 300 is 168 μm, or the length of the support beam 300 is 162 μm.
[0056] In some embodiments, the angle between the support beam 300 and the cantilever beam 200 is 45 degrees.
[0057] In this way, the design of the inclined short support beam 300 can not only provide structural support for the cantilever beams 200 on both sides to ensure their resonance stability, but also can form an irregular outer contour of the resonator compared to the solution in which the support beam 300 is arranged parallel to the cantilever beam 200. The support beam 300 is shorter than the cantilever beam 200, and the resonator as a whole has a smaller structural volume, wherein the outer contour of the resonator is formed by etching.
[0058] In some embodiments, a bottom electrode 400, a piezoelectric layer 500 and a top electrode 600 are stacked in sequence on the substrate 100, the cantilever beam 200 is arranged on the substrate 100, the bottom electrode 400, the piezoelectric layer 500 and the top electrode 600, and the first opening 210 passes through the substrate 100, the bottom electrode 400, the piezoelectric layer 500 and the top electrode 600.
[0059] Exemplarily, the substrate 100 is a silicon layer, the bottom electrode 400 is a molybdenum bottom electrode 400, the piezoelectric layer 500 is an aluminum nitride piezoelectric layer 500, and the top electrode 600 is a molybdenum top electrode 600. With such a configuration, the resonator formed by the structure can significantly improve the electro-mechanical conversion efficiency, frequency stability, mechanical strength, quality factor and thermal stability of the resonator while maintaining compatibility with existing manufacturing processes. Specifically, aluminum nitride (AlN), as a material with good piezoelectric properties, can efficiently convert electrical signals into mechanical vibrations. Molybdenum (Mo) has high conductivity and high-temperature stability and can provide a low-resistance path, thereby reducing power loss. In addition, the thermal expansion coefficient of molybdenum is similar to that of aluminum nitride and silicon, which helps to maintain structural stability during temperature changes and reduce frequency drift caused by thermal stress. Due to the low internal friction characteristics of molybdenum and aluminum nitride, this material combination can achieve a high quality factor (Q value), that is, the energy loss of the resonator during vibration is low, thereby improving the frequency selectivity and signal purity of the resonator. This material combination is compatible with standard semiconductor manufacturing processes and is easy to integrate into existing microelectronic systems. This helps reduce manufacturing costs and improve system integration and reliability.
[0060] It should be noted that a conductive pad, also known as a conductive pad, is provided on the substrate 100, which is used to provide input and output paths for electrical signals. Specifically, the conductive pad transmits external electrical signals to the bottom electrode 400 and the top electrode 600 of the cantilever beam 200 resonator through the conductive path, thereby stimulating the resonator to work. Furthermore, the conductive pad can also provide certain mechanical support to ensure the stability and correct alignment of the electrodes and other layers. In addition, the conductive pad is usually connected to an external circuit, and electrical connection may be achieved through welding, bonding or other means to transmit electrical signals to an external measurement or control system.
[0061] That is, the bottom electrode 400 and the top electrode 600 are connected to the conductive pad on the substrate 100 through the support beam 300. The conductive pad is the connection point between the electrode and the external circuit. Applying an electrical signal through the conductive pad can control the working state of the cantilever beam 200 resonator.
[0062] Exemplarily, the conductive pad is made of a highly conductive metal, such as gold, silver, aluminum, or copper, to ensure good electrical conductivity and reliable electrical connection.
[0063] In some embodiments, the resonator has a second opening 700, which passes through the bottom electrode 400, the piezoelectric layer 500 and the top electrode 600. In this way, by setting the second opening 700 passing through the bottom electrode 400, the piezoelectric layer 500 and the top electrode 600, wiring space is left, so that the bottom electrode 400 and the top electrode 600 are easily connected to the conductive pad of the substrate 100 by wire.
[0064] In some embodiments, the second opening 700 includes a central hole 710 and peripheral side holes 720, the central hole 710 passes through the substrate 100, the bottom electrode 400, the piezoelectric layer 500 and the top electrode 600; the peripheral side holes 720 are located around the central hole 710, and the peripheral side holes 720 pass through the bottom electrode 400, the piezoelectric layer 500 and the top electrode 600.
[0065] In this way, the setting of the center hole 710 can not only reduce the overall structural stiffness of the resonator, but also serve as a frequency adjustment structure. Specifically, during the design process, the frequency of the resonator can be fine-tuned by adjusting the size of the hole.
[0066] In some embodiments, a metal tuning layer is provided on the side of the top electrode 600 facing away from the substrate 100. The metal tuning layer is connected to the top electrode 600. The metal tuning layer and the top electrode 600 are made of different materials. The metal tuning layer is located on the top layer of the cantilever beam 200. The material of the metal tuning layer is silver, or the material of the metal tuning layer is copper, or the material of the metal tuning layer is gold, or the material of the metal tuning layer is palladium.
[0067] Exemplarily, a metallic silver layer is coated on the top surface of the cantilever beam 200 by magnetron sputtering.
[0068] In this case, a metal tuning layer is provided on the top surface of cantilever beam 200. The load of the metal tuning layer can affect the resonant frequency of cantilever beam 200. Subsequently, the metal on the top surface can be removed through plasma impaction to achieve more precise frequency tuning of the resonator. For example, if the actual frequency of the resonant device product deviates slightly from the desired frequency, fine-tuning can be achieved by partially removing the metal tuning layer.
[0069] In some embodiments, the distance between the outermost sides of two relative cantilever beams 200 is less than or equal to 1.2 mm. For example, the distance between the outermost sides of two relative cantilever beams 200 is 1 mm. In this way, the rectangular area formed by the line connecting the outermost edges of the cantilever beams 200 in the extension direction is 1 square millimeter, which is less than 1.2 mm*1.2 mm. This structure is conducive to subsequent packaging. Furthermore, the degree of freedom of a single cantilever beam is limited, and its excited modes are limited. That is, compared with the single vibration mode of a traditional cantilever beam resonator, the mode of the resonator in the embodiment of the present application is adjustable. Specifically, it can realize the switching between the in-plane mode and the out-of-plane mode by the size and position of the first opening on the cantilever beam. At the same time, the presence of the first opening can also reduce the stiffness of the cantilever beam, making the resonator device working at a low frequency smaller in size. Figure 3 The figure shows the in-plane vibration mode diagram of the resonator of the embodiment of the present application at 1 MHz. Figure 4 The figure shows the out-of-plane vibration mode diagram of the resonator according to the embodiment of the present application at 19.647 MHz.
[0070] It should be noted that the in-plane mode and the out-of-plane mode have different application scenarios. The in-plane mode is very sensitive to the changes in physical quantities (such as acceleration and force) in the plane, and because the direction of movement is parallel to the substrate, the air damping is low, and it is easy to achieve a high Q value. It can be used in application scenarios such as acceleration sensors and gyroscopes; the out-of-plane mode has a larger amplitude, which is suitable for detecting small external disturbances, can support higher vibration frequencies, and is suitable for high-frequency application scenarios, such as pressure sensors, filters, etc. The resonator is in the in-plane mode ( Figure 3 ), the cantilever beam vibrates in the direction parallel to the plane of the screen and deforms in this direction. The resonator is in the out-of-plane mode ( Figure 4 ), the cantilever beam deforms in a direction perpendicular to the screen plane.
[0071] In the second aspect, an embodiment of the present application provides an electronic device, including the resonator provided by any embodiment of the first aspect, and also has all the beneficial effects of any embodiment of the first aspect, which will not be repeated.
[0072] Electronic devices include cars, tablets, smartphones, headphones, hearing aids, drones or robots.
[0073] In the description of this application, it should be understood that the terms "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.
[0074] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. Throughout the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.
[0075] In this application, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.
[0076] In this application, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.
[0077] The various embodiments or implementation methods in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments can be referenced to each other.
[0078] It should be noted that phrases such as "one embodiment," "an embodiment," "exemplary embodiments," and "some embodiments" in this specification may indicate embodiments that may include a particular feature, structure, or characteristic, but not every embodiment necessarily includes that particular feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same embodiment. Furthermore, when a particular feature, structure, or characteristic is described in conjunction with an embodiment, it is within the knowledge of those skilled in the art to implement such feature, structure, or characteristic in conjunction with other embodiments, whether explicitly described or not.
[0079] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.
Claims
1. A resonator, characterized in that include: A substrate (100) is provided with at least two cantilever beams (200), the two cantilever beams (200) are symmetrically arranged relative to the center of the substrate (100), and the cantilever beams (200) are provided with a first opening (210).
2. The resonator according to claim 1, characterized in that There are four cantilever beams (200), and the four cantilever beams (200) are symmetrically arranged relative to the center of the substrate (100), and each cantilever beam (200) is provided with the first opening (210).
3. The resonator according to claim 2, characterized in that A support beam (300) is further provided between two adjacent cantilever beams (200), and the support beam (300) is connected to the substrate (100).
4. The resonator according to claim 3, characterized in that The angle between the support beam (300) and the cantilever beam (200) is 45 degrees.
5. The resonator according to any one of claims 1 to 4, characterized in that: A bottom electrode (400), a piezoelectric layer (500) and a top electrode (600) are sequentially stacked on the substrate (100); the cantilever beam (200) is arranged on the substrate (100), the bottom electrode (400), the piezoelectric layer (500) and the top electrode (600); and the first opening (210) penetrates the substrate (100), the bottom electrode (400), the piezoelectric layer (500) and the top electrode (600).
6. The resonator according to claim 5, characterized in that The resonator has a second opening (700), and the second opening (700) penetrates the bottom electrode (400), the piezoelectric layer (500) and the top electrode (600).
7. The resonator according to claim 6, characterized in that The second opening (700) includes a central hole (710) and peripheral holes (720), and the central hole (710) passes through the substrate (100), the bottom electrode (400), the piezoelectric layer (500) and the top electrode (600); The peripheral hole (720) is located around the central hole (710), and the peripheral hole (720) penetrates the bottom electrode (400), the piezoelectric layer (500) and the top electrode (600).
8. The resonator according to claim 5, characterized in that A metal tuning layer is provided on the side of the top electrode (600) facing away from the substrate (100), the metal tuning layer is located on the top layer of the cantilever beam (200), and the material of the metal tuning layer is silver, copper, gold or palladium.
9. The resonator according to any one of claims 1 to 4, characterized in that: The distance between the outermost sides of the two opposite cantilever beams (200) is less than or equal to 1.2 mm.
10. An electronic device, characterized in that: Comprising the resonator according to any one of claims 1 to 9.