Grinding temperature monitoring device and chemical mechanical polishing equipment

Abstract

The utility model provides a grinding temperature monitoring device and chemical mechanical polishing equipment, including: infrared thermal imager, grinding fluid supply subassembly and controller, infrared thermal imager is arranged in the chemical mechanical polishing equipment corresponding to grinding head, infrared thermal imager is used for collecting the infrared thermal imaging image of grinding head surrounding area. The grinding fluid supply assembly is used for supplying grinding fluid to the grinding pad, the controller is connected with the infrared thermal imager, and the grinding fluid supply condition of the grinding fluid supply assembly is adjusted according to infrared thermal imaging image feedback. According to the temperature condition of the area around the grinding head on the infrared thermal imaging image, namely the local area of the grinding pad just rotated out of the grinding head and the temperature condition of the grinding fluid on the local area, the grinding fluid supply condition of the grinding fluid supply assembly can be fed back and adjusted; and the grinding temperature of the wafer is controlled within the preset grinding temperature range of the wafer, so that the grinding temperature of the wafer can be monitored, controlled and adjusted in the grinding process.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor manufacturing, especially relates to a grinding temperature monitoring device and chemical mechanical polishing equipment. BACKGROUND

[0002] Chemical mechanical polishing (CMP) equipment is an important device in the semiconductor wafer production process, and CMP is a processing technology combining chemical corrosion and mechanical removal, and is the only technology that can realize global planarization of a surface in a mechanical processing process. The CMP machine is roughly divided into a grinding unit and a cleaning unit, the grinding unit includes a grinding disc, a grinding pad, a grinding head and a grinding dish, and they cooperate with each other to provide a stable process environment for the wafer; the cleaning unit cleans the wafer to remove the surface residual particles and the complex produced by the reaction, and finally the wafer leaves the machine after drying. The grinding unit is the place for global planarization of the wafer surface, and thus is the most important.

[0003] Grinding temperature is a key factor affecting grinding efficiency and CMP planarization effect, therefore, grinding temperature control is very important. However, the wafer is closely attached to the grinding pad during the grinding process, which makes it very difficult to monitor and control the grinding temperature.

[0004] Therefore, it is necessary to provide a grinding temperature monitoring device and chemical mechanical polishing equipment to solve the above problems. SUMMARY

[0005] The utility model discloses a kind of grinding temperature monitoring device and chemical mechanical polishing equipment, to improve the problem that wafer grinding temperature cannot be effectively monitored in the grinding process in the prior art.

[0006] The utility model provides a kind of grinding temperature monitoring device, comprising:

[0007] Infrared thermal imager, corresponding the grinding head is located in chemical mechanical polishing equipment, and the infrared thermal imager is used to collect the infrared thermal imaging image of the surrounding area of grinding head;

[0008] Grinding liquid supply component, for supplying grinding liquid to grinding pad;

[0009] Controller, connect with the infrared thermal imager, according to the infrared thermal imaging image feedback adjusts the grinding liquid supply condition of the grinding liquid supply component.

[0010] The grinding temperature monitoring device has the advantages that: the infrared thermal imager is used to collect the infrared thermal imaging image of the surrounding area of the grinding head, the temperature condition of the surrounding area of the grinding head on the infrared thermal imaging image, the temperature condition of the local area of the grinding pad just transferred from the grinding head and the temperature condition of the grinding liquid on the local area are obtained, the grinding liquid supply condition of the grinding liquid supply assembly can be feedback adjusted, the grinding temperature of the wafer can be controlled in the wafer preset grinding temperature range, and the grinding temperature of the wafer can be monitored and controlled during the grinding process.

[0011] In a possible embodiment, the grinding pad is divided into a plurality of grinding sub-zones from inside to outside, the grinding sub-zone located at the innermost layer is in a circular shape with the center of the grinding pad as the center, and the remaining grinding sub-zones are in annular shapes concentric with the grinding sub-zone located at the innermost layer.

[0012] The grinding liquid supply assembly comprises a conveying pipeline located above the grinding pad and a plurality of nozzles arranged on the conveying pipeline, each grinding sub-zone corresponds to at least one nozzle, and the nozzle is used to supply grinding liquid to the corresponding grinding sub-zone.

[0013] The grinding pad is divided into a plurality of grinding sub-zones, at least one nozzle is arranged on the conveying pipeline corresponding to each grinding sub-zone, and the grinding liquid can be supplied to each grinding sub-zone individually to ensure the uniformity of the distribution of the grinding liquid.

[0014] In a possible embodiment, the conveying pipeline comprises a main pipe and a plurality of branch pipes arranged at intervals on the main pipe.

[0015] Each grinding sub-zone corresponds to at least one branch pipe, the nozzle is arranged at the end of the corresponding branch pipe away from the conveying pipeline, an adjusting valve is further arranged on each branch pipe, the adjusting valve is located between the conveying pipeline and the corresponding nozzle, the controller is in control connection with the adjusting valve, and the adjusting valve is used to adjust the flow of the grinding liquid flowing out of the nozzle.

[0016] An individual adjusting valve is arranged for each nozzle, the flow of the grinding liquid of the corresponding nozzle can be adjusted individually through the adjusting valve, and the supply amount of the grinding liquid of each grinding sub-zone can be adjusted individually.

[0017] In a possible embodiment, a heater is further arranged on each branch pipe, the controller is in control connection with the heater, and the heater is used to heat the grinding liquid in the branch pipe and adjust the heating temperature of the grinding liquid.

[0018] The beneficial effect is that a separate heater is arranged for each nozzle, the heating temperature of the polishing liquid in the corresponding branch pipe can be adjusted individually by the heater, so that the temperature of the polishing liquid in each polishing area can be adjusted individually.

[0019] In a possible embodiment, the polishing temperature monitoring device further comprises:

[0020] A data analysis module, connected with the infrared thermal imager and configured to obtain the polishing temperature of each polishing area on the infrared thermal image according to the infrared thermal image.

[0021] In a possible embodiment, the controller comprises:

[0022] A temperature comparison module, connected with the data analysis module and configured to compare the polishing temperature of each polishing area with a set temperature range;

[0023] A feedback adjustment module, connected with the temperature comparison module, the regulating valve and the heater, when the polishing temperature of the polishing area is less than the minimum value of the set temperature range, the feedback adjustment module controls the corresponding heater to increase the heating temperature of the polishing liquid and / or controls the corresponding regulating valve to reduce the flow of the polishing liquid; when the polishing temperature of the polishing area is greater than the maximum value of the set temperature range, the feedback adjustment module controls the corresponding heater to reduce the heating temperature of the polishing liquid and / or controls the corresponding regulating valve to increase the flow of the polishing liquid.

[0024] The beneficial effect is that by comparing the polishing temperature of each polishing area with a set temperature range, if the polishing temperature of the polishing area is too small, the heating temperature of the polishing liquid is increased and / or the flow of the polishing liquid is reduced; if the polishing temperature of the polishing area is too large, the heating temperature of the polishing liquid is reduced and / or the flow of the polishing liquid is increased, so that the polishing temperature of the wafer is controlled within the preset polishing temperature range of the wafer.

[0025] In a possible embodiment, the minimum value of the set temperature range is less than the minimum value of the preset polishing temperature range of the wafer.

[0026] The beneficial effect is that after the local area of the polishing pad is turned out from under the wafer, its temperature will be reduced due to heat dissipation and other factors, and setting the minimum value of the set temperature range to be less than the minimum value of the preset polishing temperature range of the wafer will be closer to the actual process situation.

[0027] In a possible embodiment, the infrared thermal imager is arranged on the turned-out side of the polishing pad on the polishing head, and the infrared thermal imager is configured to collect the infrared thermal image of the area around the turned-out side of the polishing pad on the polishing head.

[0028] The beneficial effect is that the infrared thermal imager is arranged at the run-out side of the polishing pad on the polishing head, and the infrared thermal imager can collect the infrared thermal imaging image of the area around the run-out side of the polishing pad on the polishing head, that is, the infrared thermal imaging image of the local area of the polishing pad just run out of the polishing head and the polishing liquid on the local area, which is closer to the polishing temperature of the wafer.

[0029] In a possible embodiment, the conveying pipeline is arranged close to the run-in side of the polishing pad on the polishing head during polishing; and / or,

[0030] The conveying pipeline extends to the center of the polishing pad along the radial direction of the polishing pad.

[0031] The beneficial effect is that the conveying pipeline is arranged close to the run-in side of the polishing pad on the polishing head, and after the polishing liquid flows onto the polishing pad, it quickly enters the lower side of the wafer under the rotation of the polishing disc, avoiding the polishing liquid from being in contact with the outside for too long to reduce the temperature of the polishing liquid, thereby affecting the polishing temperature of the wafer.

[0032] The utility model also provides a chemical mechanical polishing equipment, including the polishing temperature monitoring device in any one of above-mentioned embodiments. BRIEF DESCRIPTION OF DRAWINGS

[0033] Figure 1 It is the front view that the polishing temperature monitoring device of the utility model is installed in the chemical mechanical polishing equipment.

[0034] Figure 2 It is the plan view that the polishing temperature monitoring device of the utility model is installed in the chemical mechanical polishing equipment.

[0035] Figure 3 It is the schematic view of the polishing liquid supply assembly in the polishing temperature monitoring device of the utility model.

[0036] Figure 4 It is the logic block diagram of the polishing temperature monitoring device of the utility model.

[0037] Mark explanation: 110, infrared thermal imager;120, polishing liquid supply assembly;121, conveying pipeline;1211, main pipe;1212, branch pipe;122, nozzle;123, regulating valve;124, heater;130, controller;131, temperature comparison module;132, feedback adjustment module;140, data analysis module;200, polishing head;300, polishing disc;400, polishing pad;410, polishing subarea;500, wafer. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be described clearly and completely in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by the ordinary skilled in the art without creative labor belong to the protection scope of the utility model.

[0039] In the chemical mechanical polishing grinding process, the grinding disc rotates with the grinding pad on it, the grinding head adsorbs the wafer and places the wafer on the grinding pad, and provides the grinding pad with a grinding liquid containing chemical medicine and abrasive particles; the chemical medicine reacts chemically with the wafer surface to form an easily removed oxide layer, and the abrasive particles help to remove the oxide layer under mechanical action. The grinding head rotates with the wafer, so that the oxide layer on the wafer surface is mechanically removed during the grinding process, thereby achieving the planarization of the wafer surface.

[0040] In view of the problems existing in the prior art, the embodiments of the utility model provide a kind of grinding temperature monitoring device, referring to Figure 1 And Figure 2 Grinding temperature monitoring device includes: infrared thermal imager 110, grinding liquid supply assembly 120 and controller 130, infrared thermal imager 110 is set in chemical mechanical polishing equipment corresponding grinding head 200, infrared thermal imager 110 is used to collect the infrared thermal imaging image of the area around grinding head 200. Grinding liquid supply assembly 120 is used to supply grinding liquid to grinding pad 400, controller 130 is connected with infrared thermal imager 110, and the grinding liquid supply condition of grinding liquid supply assembly 120 is adjusted according to infrared thermal imaging image feedback.

[0041] In this embodiment, infrared thermal imager 110 can monitor the area around grinding head 200 in real time, which can be understood as that infrared thermal imager 110 receives the local area of grinding pad 400 just turned out of grinding head 200 and the infrared radiation emitted by the grinding liquid on the local area in real time and converts it into electrical signal, and the infrared thermal imaging image is generated in real time after these electrical signals are amplified and filtered. The temperature condition of the local area of grinding pad 400 just turned out of grinding head 200 and the grinding liquid on the local area is obtained according to the infrared thermal imaging image, so that the grinding liquid supply condition of grinding liquid supply assembly 120 can be adjusted, for example, the flow and temperature of the grinding liquid are adjusted, to control the grinding temperature of wafer 500 within the preset grinding temperature range of wafer 500, so that the grinding temperature of wafer 500 is monitored and controlled in real time and effectively during the grinding process.

[0042] In one embodiment, referring to Figure 1 AndFigure 2 The polishing pad 400 is divided into a plurality of polishing sub-zones 410 from inside to outside, and the polishing sub-zone located at the innermost layer is in a circular shape with the center of the polishing pad 400 as the center, and the remaining polishing sub-zones are in an annular shape concentric with the polishing sub-zone located at the innermost layer. The polishing liquid supply assembly 120 includes a delivery pipeline 121 located above the polishing pad 400 and a plurality of nozzles 122 arranged on the delivery pipeline 121, and each polishing sub-zone 410 corresponds to at least one nozzle 122, and the nozzle 122 is used to supply the polishing liquid to the corresponding polishing sub-zone 410.

[0043] In this embodiment, by dividing the polishing pad 400 into a plurality of concentric polishing sub-zones 410, each polishing sub-zone 410 corresponds to at least one nozzle 122, which means that the polishing liquid can be accurately supplied to different areas of the wafer 500 surface, and each polishing sub-zone 410 can independently receive the polishing liquid supplied by the corresponding nozzle 122, so that the polishing liquid can be more uniformly distributed on the polishing pad 400, avoiding the situation that the polishing liquid is excessively accumulated in some polishing sub-zones 410 or insufficient in other polishing sub-zones 410, thereby improving the uniformity of polishing.

[0044] In a specific embodiment, referring to Figure 3 The delivery pipeline 121 includes a main pipe 1211 and a plurality of branch pipes 1212 arranged at intervals on the main pipe 1211. Each polishing sub-zone 410 corresponds to at least one branch pipe 1212, and the nozzle 122 is arranged at the end of the corresponding branch pipe 1212 away from the delivery pipeline 121, and an adjusting valve 123 is further arranged on each branch pipe 1212, the adjusting valve 123 is located between the delivery pipeline 121 and the corresponding nozzle 122, and the controller 130 is in control connection with the adjusting valve 123, and the adjusting valve 123 is used to adjust the flow of the polishing liquid flowing out of the nozzle 122.

[0045] In this embodiment, by arranging a separate adjusting valve 123 on each branch pipe 1212, and controlling the adjusting valve 123 through the controller 130, the flow of the polishing liquid can be accurately controlled. In different polishing sub-zones 410, by controlling the adjusting valve 123 on the branch pipe 1212 corresponding to the different polishing sub-zones 410, the flow of the polishing liquid in different polishing sub-zones 410 can be individually adjusted as needed. During the polishing process, if the polishing liquid in some polishing sub-zones 410 is too much, it may cause excessive polishing and waste of the polishing liquid, and if the polishing liquid is too little, it may not achieve the expected polishing effect. By accurately controlling the flow of the polishing liquid in each polishing sub-zone 410 through the adjusting valve 123, it can ensure that each polishing sub-zone 410 obtains an appropriate amount of polishing liquid, thereby ensuring the uniformity of polishing through accurate flow control, and also saving the use amount of the polishing liquid and reducing the production cost.

[0046] In a specific embodiment, referring to Figure 3 The controller 130 is in control connection with the heater 124, and the heater 124 is used to heat the polishing liquid in the branch pipe 1212 and can adjust the heating temperature of the polishing liquid.

[0047] In this embodiment, by setting a separate heater 124 on each branch pipe 1212, and by the controller 130 controlling the heater 124, the heating temperature of the polishing liquid in the corresponding branch pipe 1212 can be individually and accurately controlled. In different polishing zones 410, by controlling the heater 124 on the branch pipe 1212 corresponding to the different polishing zones 410, the temperature of the polishing liquid in the different polishing zones 410 can be individually adjusted as needed. Accurate temperature control helps to reduce polishing problems caused by improper temperature. By independently adjusting the temperature of the polishing liquid, it can be ensured that the polishing process is carried out in the best state, thereby improving production efficiency.

[0048] The polishing process involves very complex physical and chemical actions and heat exchange processes, and the pressure and linear velocity borne by different regions of the wafer 500 are different, which can cause a large difference in the polishing temperature of different regions of the wafer 500. In order to further solve the problem of monitoring and controlling the polishing temperature of different regions of the wafer 500.

[0049] The utility model makes further improvement in temperature monitoring, and in one embodiment, referring to Figure 4 The polishing temperature monitoring device further comprises a data analysis module 140 connected with the infrared thermal imager 110 and used to obtain the polishing temperature of each polishing zone 410 on the infrared thermal imaging image according to the infrared thermal imaging image.

[0050] In this embodiment, by data processing and analysis of the infrared thermal imaging image by the data analysis module 140, the temperature condition of the region around the polishing head 200, i.e. the polishing temperature of each polishing zone 410 on the local region of the polishing pad 400 just turned out from the polishing head 200, is obtained, and then the temperature of the polishing liquid in different polishing zones 410 is adjusted through feedback, so that the control and adjustment of the polishing temperature of different regions on the wafer 500 can be realized.

[0051] In a specific embodiment, referring to Figure 4The controller 130 comprises a temperature comparison module 131 connected with the data analysis module 140 and used for comparing the polishing temperature of each polishing sub-zone 410 with the set temperature range; a feedback adjustment module 132 connected with the temperature comparison module 131, the adjusting valve 123 and the heater 124, when the polishing temperature of the polishing sub-zone 410 is less than the minimum value of the set temperature range, the feedback adjustment module 132 controls the corresponding heater 124 to increase the heating temperature of the polishing liquid and / or controls the corresponding adjusting valve 123 to decrease the flow of the polishing liquid; when the polishing temperature of the polishing sub-zone 410 is greater than the maximum value of the set temperature range, the feedback adjustment module 132 controls the corresponding heater 124 to decrease the heating temperature of the polishing liquid and / or controls the corresponding adjusting valve 123 to increase the flow of the polishing liquid.

[0052] In this embodiment, the polishing temperature of each polishing sub-zone 410 is compared with the set temperature range by the temperature comparison module 131, and the feedback adjustment module 132 timely adjusts the heating temperature and / or the flow of the polishing liquid according to the comparison result, so that the polishing temperature of the wafer 500 can be accurately controlled. The double adjustment mechanism ensures that the actual deviation of the polishing temperature can be quickly and accurately responded. When the polishing temperature is lower than the minimum value of the set range, the temperature of the polishing zone can be effectively increased by increasing the heating temperature or decreasing the flow of the polishing liquid. On the contrary, when the polishing temperature is too high, the temperature of the polishing zone can be quickly decreased by decreasing the heating temperature or increasing the flow of the polishing liquid. The mechanism of instant feedback adjustment ensures that the polishing temperature can be maintained within the set temperature range, avoiding the influence of the polishing effect of the wafer 500 due to the too high or too low temperature, thereby improving the polishing quality.

[0053] In one embodiment, referring to Figure 1 and Figure 2, the minimum of the set temperature range is less than the minimum of the preset polishing temperature range of the wafer 500. During the polishing process, the polishing pad 400 is in close contact with the wafer 500 and transfers heat. However, when the local area of the polishing pad 400 in contact with the wafer 500 is turned away from under the wafer 500, the local area of the polishing pad 400 and the slurry on the local area will dissipate heat through air convection, radiation, etc. because the local area is not in direct contact with the wafer 500 at this time, resulting in a drop in temperature. The infrared thermal imager 110 captures the infrared thermal imaging image of the local area of the polishing pad 400, and the data analysis module 140 obtains the polishing temperature of each polishing sub-zone 410 from the infrared thermal imaging image. In fact, the actual polishing temperature of the wafer 500 is smaller than the actual polishing temperature of the wafer 500. Therefore, in the present embodiment, the minimum of the set temperature range is set to be less than the minimum of the preset polishing temperature range of the wafer 500, which is a more accurate judgment mechanism closer to the actual process, thereby ensuring that the actual polishing temperature of the wafer 500 is more accurately controlled within the preset polishing temperature range of the wafer 500. Because the degree of temperature drop caused by heat dissipation is different in different polishing processes, the minimum of the set temperature range is not limited, and can be flexibly set according to the actual process.

[0054] In an embodiment, referring to Figure 1 and Figure 2 , the infrared thermal imager 110 is arranged corresponding to the turn-out side of the polishing pad 400 on the polishing head 200, and the infrared thermal imager 110 is used to capture the infrared thermal imaging image of the area around the turn-out side of the polishing pad 400 on the polishing head 200. In this embodiment, the infrared thermal imager 110 is arranged corresponding to the turn-out side of the polishing pad 400 on the polishing head 200, as shown in Figure 2 , the grid area in the dashed box is the shooting range of the infrared thermal imager 110, and the infrared thermal imager 110 captures the infrared thermal imaging image of the local area of the polishing pad 400 just turned out of the polishing head 200 and the slurry on the local area. It can be understood that the infrared thermal imager 110 captures the infrared thermal imaging image of the local area of the polishing pad 400 just in contact with the wafer 500 and separated from the wafer 500 and the slurry on the local area, which is closer to the current polishing temperature of the wafer 500 and can more accurately reflect the current polishing temperature of the wafer 500.

[0055] In a specific embodiment, referring to Figure 1 and Figure 2In the grinding, the delivery pipeline 121 is arranged close to the entry side of the polishing pad 400 on the polishing head 200. If the polishing liquid is in contact with the outside for too long before it contacts the wafer 500, the temperature of the polishing liquid can be reduced due to heat dissipation. In the embodiment, the delivery pipeline 121 is arranged close to the entry side of the polishing pad 400 on the polishing head 200. It can be understood that the delivery pipeline 121 is close to the entry side of the polishing pad 400, but there is still a certain distance. After the polishing liquid in the delivery pipeline 121 flows to the polishing pad 400, the polishing liquid is quickly dispersed under the centrifugal force due to the rotation of the polishing disc 300, and quickly enters the lower side of the wafer 500, so that the dispersed polishing liquid can timely contact and grind the wafer 500, and the polishing liquid is prevented from being in contact with the outside for too long to reduce the temperature of the polishing liquid, thereby affecting the grinding temperature of the wafer 500.

[0056] In a specific embodiment, referring to Figure 2 , the delivery pipeline 121 extends to the center of the polishing pad 400 along the radial direction of the polishing pad 400.

[0057] The utility model discloses still provide a kind of chemical mechanical polishing equipment, including the polishing temperature monitoring device in any of the above embodiments.

[0058] The technical effects of the polishing temperature monitoring device of the utility model are explained in detail as follows.

[0059] 1, infrared thermal imager 110 can real-time acquisition infrared thermal imaging image of the area around polishing head 200, these images can reflect the temperature distribution of polishing pad 400 and the polishing liquid thereon, so that the polishing liquid supply condition of polishing liquid supply assembly 120 can be fed back and adjusted, and the grinding temperature of wafer 500 is monitored and controlled in real time and effectively during grinding.

[0060] 2, each polishing subarea 410 of polishing pad 400 corresponds at least one nozzle 122, so that each polishing subarea 410 can obtain individual polishing liquid supply, and the problems of excessive concentration or lack of polishing liquid in a certain area are avoided. This uniform distribution helps to improve the uniformity and consistency of grinding, thereby improving the grinding quality of wafer 500.

[0061] 3, the flow of polishing liquid of each branch pipe 1212 can be controlled individually by adjusting valve 123 on each branch pipe 1212. According to the temperature condition of different polishing subareas 410 on the polishing pad 400, the flow of polishing liquid of different branch pipes 1212 is adjusted, so as to realize accurate adjustment of the flow of polishing liquid of different polishing subareas 410.

[0062] 4、Through the heater 124 on each branch pipe 1212, the slurry temperature of each branch pipe 1212 can be controlled separately. According to the temperature of different polishing zones 410 on the polishing pad 400, the flow of slurry of different branch pipes 1212 is adjusted, so as to realize the accurate adjustment of the slurry temperature of each polishing zone 410.

[0063] 5、The data analysis module 140 can process the infrared thermal imaging image, extract the polishing temperature of each polishing zone 410, and compare with the set temperature range, according to the comparison result, the temperature abnormality in the polishing process is found in time, and the corresponding adjustment measure is triggered. Through real-time monitoring and feedback adjustment, it can ensure that the polishing temperature always remains in the set temperature range, so as to guarantee the polishing quality of the wafer 500.

[0064] In the description of the present application, it should be understood that the terms "include" and "have" and any variations thereof used in this paper are intended to cover non-exclusive inclusion, for example, a process, method, system, product or equipment including a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or equipment.

[0065] It should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, therefore it cannot be understood as a limitation of the present application.

[0066] In addition, the terms "first", "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0067] Although the embodiments of the present application have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to the embodiments without departing from the spirit and scope of the present application as defined in the following claims. Moreover, the present application described herein can have other embodiments and be practiced or implemented in various ways. Unless otherwise defined, technical or scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

Claims

1. A grinding temperature monitoring device, characterized in that: include: An infrared thermal imager, corresponding to the polishing head, is provided in the chemical mechanical polishing equipment, and is used to collect infrared thermal imaging images of the area around the polishing head; A polishing liquid supply assembly, used for supplying polishing liquid to the polishing pad; The controller is connected to the infrared thermal imager and adjusts the grinding liquid supply of the grinding liquid supply assembly according to the infrared thermal imaging image feedback.

2. The grinding temperature monitoring device according to claim 1, characterized in that: The polishing pad is divided into a plurality of polishing zones from the inside out, the innermost polishing zone is in a circular shape with the center of the polishing pad as the center, and the remaining polishing zones are in annular shapes concentric with the innermost polishing zone; The polishing liquid supply assembly includes a delivery pipeline located above the polishing pad and a plurality of nozzles arranged on the delivery pipeline. Each polishing partition corresponds to at least one nozzle, and the nozzle is used to supply polishing liquid to the corresponding polishing partition.

3. The grinding temperature monitoring device according to claim 2, characterized in that: The delivery pipeline includes a main pipe and a plurality of branch pipes arranged at intervals on the main pipe; Each of the grinding partitions corresponds to at least one branch pipe, and the nozzle is arranged at one end of the corresponding branch pipe away from the delivery pipeline. Each branch pipe is also provided with a regulating valve, which is located between the delivery pipeline and the corresponding nozzle. The controller is connected to the regulating valve for controlling the regulating valve, which is used to adjust the flow rate of the grinding liquid flowing out of the nozzle.

4. The grinding temperature monitoring device according to claim 3, characterized in that: Each branch pipe is further provided with a heater, and the controller is control-connected to the heater. The heater is used to heat the grinding liquid in the branch pipe and can adjust the heating temperature of the grinding liquid.

5. The grinding temperature monitoring device according to claim 4, characterized in that: Also includes: A data analysis module is connected to the infrared thermal imager and is used to obtain the grinding temperature of each grinding partition on the infrared thermal imaging image according to the infrared thermal imaging image.

6. The grinding temperature monitoring device according to claim 5, characterized in that: The controller includes: a temperature comparison module connected to the data analysis module and configured to compare the grinding temperature of each grinding zone with a set temperature range; A feedback regulation module is connected to the temperature comparison module, the regulating valve and the heater. When the grinding temperature of the grinding partition is lower than the minimum value of the set temperature range, the feedback regulation module controls the corresponding heater to increase the heating temperature of the grinding liquid and / or controls the corresponding regulating valve to reduce the flow rate of the grinding liquid; when the grinding temperature of the grinding partition is higher than the maximum value of the set temperature range, the feedback regulation module controls the corresponding heater to lower the heating temperature of the grinding liquid and / or controls the corresponding regulating valve to increase the flow rate of the grinding liquid.

7. The grinding temperature monitoring device according to claim 6, characterized in that: The minimum value of the set temperature range is smaller than the minimum value of the preset grinding temperature range of the wafer.

8. The grinding temperature monitoring device according to any one of claims 2 to 7, characterized in that: The infrared thermal imager is arranged corresponding to the roll-out side of the polishing pad on the polishing head, and is used to collect infrared thermal imaging images of the area around the roll-out side of the polishing pad on the polishing head.

9. The grinding temperature monitoring device according to any one of claims 2 to 7, characterized in that: During grinding, the delivery pipeline is arranged close to the turning-in side of the grinding pad on the grinding head; and / or, The delivery pipeline extends along the radial direction of the polishing pad to the center of the polishing pad.

10. A chemical mechanical polishing device, characterized in that: The method comprises the grinding temperature monitoring device according to any one of claims 1 to 9.

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