Device for growing tellurium-cadmium compound crystals
By combining growth containers and cooling devices, the cracking problem in the growth process of cadmium telluride crystals was solved, and the recovery of high-purity tellurium material was achieved, improving crystal quality and resource utilization while reducing production costs and safety risks.
Patent Information
- Application Number
- CN202422597777.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-28
- Publication Date
- 2025-10-17
- Estimated Expiration
- 2034-10-28
AI Technical Summary
In existing technologies, cadmium telluride crystals are prone to cracking during growth, leading to a decline in crystal quality. Furthermore, the tellurium material after growth is difficult to recover and purify, resulting in resource waste. At the same time, traditional cooling methods pose safety hazards.
By combining a growth vessel and a cooling device, liquid tellurium and cadmium telluride crystals are separated in situ at high temperatures. High-precision temperature control is achieved using physical vapor deposition and an electric current transducer-type wafer cooling device, which avoids cracking and recovers high-purity tellurium.
This method achieves a smooth, crack-free surface for cadmium telluride crystals, improving crystal quality and yield. It also allows for the recovery of high-purity tellurium material for reuse, reducing production costs and safety risks.
Smart Images
Figure CN223445679U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to the technical field of crystal growth, specifically relates to a device for growing tellurium cadmium compound crystal. BACKGROUND
[0002] The tellurium-rich method for growing tellurium cadmium compound crystal requires the growth of the crystal and the temperature of the melting zone to be above the melting point of tellurium (450 DEG C), and at high temperature, the tellurium cadmium compound is dissolved in a tellurium solvent, the solubility is reduced by moving the growth crucible or the furnace body, the solution is in a supersaturated state, the tellurium cadmium compound is precipitated, the tellurium material is gradually discharged to the upper end of the tellurium cadmium compound crystal, and the lower end is the tellurium cadmium compound crystal after growth. After the growth of the tellurium cadmium compound crystal is completed, the furnace body is cooled, and when the temperature of the furnace body drops to the melting point of tellurium, the liquid tellurium will instantaneously solidify, and the tensile stress generated in the instant of phase transition is likely to cause the crystal near the growth interface to crack, even to extend downward, resulting in cracks in the tellurium cadmium compound crystal, and the availability of the tellurium cadmium compound crystal is seriously reduced. After the growth is completed, the end of the tellurium cadmium compound crystal is rich in tellurium, and the tellurium-rich material needs to be cut off. The tellurium cadmium compound in the tellurium-rich material will have residual tellurium cadmium compound, and usually the proportion of the tellurium cadmium compound is above 30%, so when the tellurium-rich material is cut, impurities in the cutting coolant are easily introduced, the tellurium-rich material is doped with a large amount of impurities, the tellurium-rich material is contaminated and cannot be used again, and material waste is caused.
[0003] Meanwhile, the liquid tellurium material and the tellurium cadmium compound crystal after the growth of the crystal are completely separated by the action of physical vapor deposition, and the cracking of the tellurium cadmium compound crystal can be avoided. In the process, the tellurium material needs to be volatilized and deposited, and the part where the tellurium material is deposited needs to be cooled. UTILITY MODEL CONTENTS
[0004] In view of the defects of the prior art, the utility model provides a device for growing tellurium cadmium compound crystal, which realizes the growth of the tellurium cadmium compound crystal by the tellurium-rich method, the surface of the obtained crystal is smooth and crack-free, the cracking of the tellurium cadmium compound crystal is reduced, high-purity tellurium material is recovered for use next time, resources are saved, the cooling device of the utility model does not need any refrigerant, can work continuously, and realizes high-precision temperature control.
[0005] In order to achieve the above object, the utility model provides a device for growing tellurium cadmium compound crystal, which comprises a growth container, a cooling device and a lifting platform. The growth container is placed on the lifting platform, and the lifting platform drives the growth container to move up and down. The top of the growth container is concave downward, the cooling device is placed in the concave area of the top of the growth container, the cooling device is electrified to cool the top of the growth container, and the liquid tellurium of the tellurium cadmium compound crystal after growth is deposited on the top of the growth container.
[0006] The device for growing tellurium cadmium crystal is used for growing tellurium cadmium crystal by using tellurium-rich method, so that the obtained crystal surface is flat and crack-free, the crystal quality is improved, and the liquid tellurium material and the tellurium cadmium crystal therein are directly separated in situ at high temperature, so that high-purity tellurium material is obtained and can be used next time, thereby avoiding waste of material. The growth container is a cavity for growing tellurium cadmium crystal and meets the growth of tellurium cadmium crystal. The cooling device is placed on the growth container. After the growth of tellurium cadmium crystal is completed, the cooling device is powered on to cool the upper part of the growth container, so that the temperature of the upper part of the growth container is lower than the melting point of tellurium. At this time, under the action of physical vapor deposition, the liquid tellurium gradually volatilizes and deposits on the upper part of the growth container. The deposition is continued until the liquid tellurium completely disappears on the top of the grown crystal, and the liquid tellurium material and the tellurium cadmium crystal are completely separated. Therefore, the obtained tellurium material can be used next time, and the surface of the grown crystal is flat and crack-free. The lifting platform can drive the growth container to move up and down to meet the requirements of different temperatures during the growth of tellurium cadmium crystal and after the growth is completed.
[0007] Further, the growth container comprises a growth crucible and a closure; the growth crucible is a vertical tank body with an opening at the top, and the closure is arranged at the opening at the top of the growth crucible. After the material is loaded, the growth crucible is integrally connected with the closure to form a sealed space.
[0008] The growth container comprises a growth crucible and a closure. The growth crucible has an opening at the top, and the closure is arranged at the opening at the top of the growth crucible. After the material is loaded, a vacuum sealed space is formed by vacuumizing for the growth of tellurium cadmium crystal. The tellurium cadmium crystal grows in the growth crucible. After the growth is completed, the tellurium material above the tellurium cadmium crystal gradually volatilizes and deposits on the bottom of the closure. The deposition is continued to realize the separation of the tellurium cadmium crystal and the tellurium material.
[0009] Further, the cooling device comprises a cold trap block and a refrigeration assembly; the cold trap block is placed above the closure; and the refrigeration assembly is placed above the cold trap block and is attached to the upper part of the cold trap block.
[0010] The cooling device comprises a cold trap block and a refrigeration assembly. After the growth of tellurium cadmium crystal is completed, the temperature of the bottom of the closure needs to be reduced. The refrigeration assembly is powered on to cool the upper end of the cold trap block, and the bottom of the closure is further cooled through the cold trap block.
[0011] Further, the refrigeration assembly comprises a refrigeration sheet, a radiator and a fan; the refrigeration sheet is arranged at the bottom of the refrigeration assembly and is attached to the cold trap block; the radiator is arranged above the refrigeration sheet; and the fan is arranged above the radiator.
[0012] The refrigeration assembly comprises a refrigeration sheet, a heat sink and a fan, the refrigeration sheet is a semiconductor refrigeration sheet, refrigeration is performed after being electrified, the heat sink and the fan can dissipate heat from the hot end of the refrigeration sheet, the temperature of the hot end is reduced, the temperature of the cold end is also reduced accordingly, and the refrigeration effect is improved.
[0013] Further, the heat sink comprises a base plate and a plurality of parallel arranged heat dissipation fins; the base plate is attached to the refrigeration sheet and is arranged above the refrigeration sheet; the plurality of parallel arranged heat dissipation fins are vertically arranged on the base plate.
[0014] The heat sink comprises a base plate and a plurality of parallel arranged heat dissipation fins; the base plate is attached to the refrigeration sheet and is arranged above the refrigeration sheet; the plurality of parallel arranged heat dissipation fins are vertically arranged on the base plate.
[0015] Further, the refrigeration sheet is connected to the power supply device.
[0016] The refrigeration sheet is connected to the power supply device, refrigeration is performed after being electrified, high-precision temperature control can be realized by controlling the input current, so that the temperature of the bottom of the closed part is more effectively reduced.
[0017] Further, the heating furnace body is provided outside the growth container, a gap exists between the inner wall of the heating furnace body and the outer wall of the growth container; a heater is arranged in the heating furnace body; the heating furnace body has an internal cavity, and the lifting platform drives the growth container to move up and down in the internal cavity of the heating furnace body.
[0018] A heater is arranged in the heating furnace body, and the lifting platform drives the growth container to move up and down in the internal cavity of the heating furnace body, so as to meet the temperature required for the growth of the tellurium cadmium compound crystal, and the tellurium cadmium compound crystal is grown, and a plurality of temperature zones exist in the heating furnace body to meet the requirement of different temperatures during the growth of the tellurium cadmium compound crystal and after the growth of the tellurium cadmium compound crystal.
[0019] Further, the tellurium cadmium compound crystal is selected from one of a cadmium zinc telluride crystal or a cadmium telluride crystal; the molecular formula of the tellurium cadmium compound crystal is Cd 1-x Zn x Te 1-y Se y (x=0~0.3, y=0~0.2).
[0020] Advantages
[0021] 1. The device for growing a tellurium cadmium compound crystal directly separates the tellurium cadmium compound crystal from tellurium material after the growth is completed at a high temperature, avoids the cracking of the tellurium cadmium compound crystal caused by the phase change stress of tellurium at the growth interface, makes the obtained crystal surface flat and crack-free, and improves the quality and yield of the tellurium cadmium compound crystal.
[0022] 2. The device for growing tellurium cadmium compound crystal can recycle high-purity and non-polluted tellurium material in situ, is used for recycling, avoids waste of material and reduces production cost;
[0023] 3. The cooling device in the device for growing tellurium cadmium compound crystal does not need any refrigerant, has no pollution source, can continuously work, has no rotating part, cannot produce rotary effect, has no sliding part, is a solid piece, has no vibration and noise during work, has long service life and is easy to install;
[0024] 4. The cooling device in the device for growing tellurium cadmium compound crystal is a current transducer type piece, high-precision temperature control can be realized through control of input current, remote control, program control and computer control are easily realized with the aid of temperature detection and control means, and an automatic control system is easily formed;
[0025] 5. The cooling device of the device for growing tellurium cadmium compound crystal has very small thermal inertia of the refrigeration piece, refrigeration time is very fast, the refrigeration piece can reach maximum temperature difference in less than one minute under the condition that the hot end is well heat-dissipated and the cold end is unloaded, and the refrigeration piece can realize temperature difference from 90 DEG C to 130 DEG C.
[0026] 6. The cooling device of the device for growing tellurium cadmium compound crystal has very small power of a single refrigeration element pair of the refrigeration piece, but the power can be very large when the refrigeration system is combined by using the same type of electric pile in series and parallel connection, and the refrigeration power can reach several milliwatts to tens of thousands of watts. BRIEF DESCRIPTION OF DRAWINGS
[0027] Figure 1 It is a structure schematic view of the device for growing tellurium cadmium compound crystal;
[0028] Figure 2 It is a structure schematic view of the growth container of the device for growing tellurium cadmium compound crystal;
[0029] Figure 3 It is a structure schematic view of the cooling device.
[0030] In the drawings: 1, growth container; 2, cooling device; 3, lifting platform; 4, heating furnace body; 11, growth crucible; 12, sealing element; 21, cold trap block; 22, refrigeration assembly; 23, power supply device; 221, refrigeration piece; 222, radiator; 223, fan; 2221, base plate; 2222, heat dissipation fin. DETAILED DESCRIPTION
[0031] Example 1
[0032] As Figure 1 and Figure 2The device for growing tellurium cadmium compound crystal shown in the figure comprises a growth container 1, a cooling device 2 and a lifting platform 3; the growth container 1 is placed on the lifting platform 3, and the lifting platform 3 drives the growth container 1 to move up and down; the top of the growth container 1 is concave downward, the cooling device 2 is placed in the concave area of the top of the growth container 1, and the cooling device 2 is electrified to cool the top of the growth container 1, so that the liquid tellurium is deposited on the top of the growth container 1 after the tellurium cadmium compound crystal is grown.
[0033] The device for growing tellurium cadmium compound crystal is used to grow tellurium cadmium compound crystal by using the tellurium-rich method, so that the obtained crystal surface is flat and crack-free, the crystal quality is improved, and the liquid tellurium material and the tellurium cadmium compound crystal are directly separated in situ at high temperature, so that high-purity tellurium material is obtained and can be used next time, thereby avoiding waste of material. The growth container 1 is a cavity for growing the tellurium cadmium compound crystal and meets the growth of the tellurium cadmium compound crystal. The cooling device 2 is placed on the growth container 1, and after the growth of the tellurium cadmium compound crystal is completed, the cooling device is electrified to cool the upper part of the growth container 1, so that the temperature of the upper part of the growth container 1 is lower than the melting point of tellurium. At this time, under the action of physical vapor deposition, the liquid tellurium gradually volatilizes and deposits on the upper part of the growth container 1. The deposition is continued until the liquid tellurium completely disappears on the top of the grown crystal, and the liquid tellurium material and the tellurium cadmium compound crystal are completely separated. Therefore, the obtained tellurium material can be used next time, and the surface of the grown crystal is flat and crack-free. The lifting platform 3 can drive the growth container 1 to move up and down to meet the different temperature requirements of the tellurium cadmium compound crystal during the growth process and after the growth is completed.
[0034] The growth container 1 comprises a growth crucible 11 and a closure 12. The growth crucible 11 is a quartz crucible, which is a vertical tank body with an opening at the top. The closure 12 is a quartz plug, which is arranged at the opening at the top of the growth crucible 11. After the material is loaded, the growth crucible 11 and the closure 12 are integrally connected to form a sealed space.
[0035] The growth container 1 comprises a growth crucible 11 and a closure 12. The growth crucible 11 is a quartz crucible, which has large size, high precision, strong temperature resistance, good heat preservation and stable quality. The growth crucible 11 has an opening at the top, and the closure 12 is arranged at the opening at the top of the growth crucible 11. After the material is loaded, a vacuum sealed space is formed by vacuumizing, which is used for growing the tellurium cadmium compound crystal. The tellurium cadmium compound crystal grows in the growth crucible 11. After the growth is completed, the distance between the top of the tellurium material above the tellurium cadmium compound crystal and the closure 12 is 10mm-200mm. The tellurium material gradually volatilizes and deposits on the bottom of the closure 12, and the deposition is continued to separate the tellurium cadmium compound crystal and the tellurium material.
[0036] The cooling device 2 comprises a cold trap block 21 and a refrigeration assembly 22; the cold trap block 21 is a metal block, such as a copper block, and has good heat conduction performance and is placed above the closure 12; the refrigeration assembly 22 is placed above the cold trap block 21 and is attached to the upper side of the cold trap block 21.
[0037] The cooling device 2 comprises the cold trap block 21 and the refrigeration assembly 22; after the tellurium cadmium compound crystal is grown, the temperature of the bottom of the closure 12 needs to be reduced, the refrigeration assembly 22 is powered on to perform refrigeration, the upper end of the cold trap block 21 is cooled, and the bottom of the closure 12 is further cooled through the cold trap block 21.
[0038] As shown in Figure 3 , the refrigeration assembly 22 comprises a refrigeration fin 221, a heat sink 222 and a fan 223; the refrigeration fin 221 is a semiconductor refrigeration fin, is arranged at the bottom of the refrigeration assembly 22 and is attached to the cold trap block 21; the heat sink 222 is arranged above the refrigeration fin 221; and the fan 223 is arranged above the heat sink 222.
[0039] The refrigeration assembly 22 comprises the refrigeration fin 221, the heat sink 222 and the fan 223; the refrigeration fin 221 is a semiconductor refrigeration fin, is powered on to perform refrigeration, the heat sink 222 and the fan 223 can dissipate heat from the hot end of the refrigeration fin 221, the temperature of the hot end is reduced, the temperature of the cold end is also reduced accordingly, and the refrigeration effect is improved.
[0040] The heat sink 222 comprises a base plate 2221 and a plurality of heat dissipation fins 2222; the base plate 2221 is attached to the refrigeration fin 221 and is arranged above the refrigeration fin 221; and the heat dissipation fins 2222 are copper heat dissipation fins and are vertically arranged on the base plate 2221 in parallel.
[0041] The heat sink 222 comprises the base plate 2221 and the plurality of heat dissipation fins 2222 arranged in parallel; the base plate 2221 is attached to the refrigeration fin 221 and is connected together; the base plate 2221 provides a plane for fixing the refrigeration fin 221 and the heat dissipation fins 2222; and the plurality of heat dissipation fins 2222 can enhance the heat dissipation effect, thereby improving the refrigeration effect.
[0042] As shown in Figure 2 , the refrigeration fin 221 is connected to a power supply device 23.
[0043] The refrigeration fin 221 is connected to the power supply device 23, is powered on to perform refrigeration, and can realize high-precision temperature control through control of the input current, thereby more effectively reducing the temperature of the bottom of the closure 12.
[0044] As shown in Figure 1As shown, the outside of the growth container 1 is provided with a heating furnace body 4, and a gap exists between the inner wall of the heating furnace body 4 and the outer wall of the growth container 1; a heater is arranged in the heating furnace body 4; the heating furnace body 4 has an internal cavity, and a hole is arranged at the bottom of the cavity, and the lifting platform 3 is fixed inside the cavity through the hole, and drives the growth container 1 to move up and down in the cavity inside the heating furnace body 4.
[0045] A heater is arranged in the heating furnace body 4, and the lifting platform 3 can drive the growth container 4 to move up and down in the cavity inside the heating furnace body 4 to meet the temperature required for the growth of the tellurium cadmium compound crystal, so as to grow the tellurium cadmium compound crystal, and multiple temperature zones exist in the heating furnace body 4 to meet the different temperature requirements of the tellurium cadmium compound crystal during the growth process and after the growth is completed.
[0046] The tellurium cadmium compound crystal is selected from one of a cadmium zinc telluride crystal or a cadmium telluride crystal; the molecular formula of the tellurium cadmium compound crystal is Cd 1-x Zn x Te 1-y Se y (x=0~0.3, y=0~0.2).
[0047] Example 2
[0048] The difference between this embodiment and example 1 is that the growth crucible 11 is a boron nitride crucible.
[0049] The growth crucible 11 is a boron nitride crucible, and the material of the boron nitride crucible is boron nitride, which has high temperature stability, good thermal conductivity, low thermal expansion coefficient, long service life, and can withstand multiple heating and cooling cycles.
[0050] Example 3
[0051] The difference between this embodiment and example 1 is that the cold trap block 21 is a silicon carbide ceramic.
[0052] The cold trap block 21 is a silicon carbide ceramic, which is light in weight, has excellent high thermal conductivity and excellent electrical conductivity, is resistant to chemical corrosion, and is resistant to high temperature, and can maintain its structural stability and strength in a high temperature environment.
Claims
1. A device for growing cadmium telluride crystals, characterized in that: The invention comprises a growth container (1), a cooling device (2) and a lifting platform (3); the growth container (1) is placed on the lifting platform (3), and the lifting platform (3) drives the growth container (1) to move up and down; the top of the growth container (1) is concave downward, and the cooling device (2) is placed in the concave area of the top of the growth container (1); the cooling device (2) is energized to cool the top of the growth container (1), so that liquid tellurium is deposited on the top of the growth container (1) after the cadmium telluride crystal grows.
2. The apparatus for growing cadmium telluride crystals according to claim 1, wherein: The growth container (1) comprises a growth crucible (11) and a closure (12); the growth crucible (11) is a vertical tank body with an opening at the top, and the closure (12) is arranged at the opening at the top of the growth crucible (11). After the material is loaded, the growth crucible (11) and the closure (12) are integrally connected to form a closed space.
3. The apparatus for growing cadmium telluride crystals according to claim 2, wherein: The cooling device (2) comprises a cold trap block (21) and a refrigeration assembly (22); the cold trap block (21) is placed above the sealing member (12); and the refrigeration assembly (22) is placed above the cold trap block (21) and fits in contact with the top of the cold trap block (21).
4. The apparatus for growing cadmium telluride crystals according to claim 3, wherein: The refrigeration assembly (22) comprises a refrigeration fin (221), a radiator (222) and a fan (223); the refrigeration fin (221) is arranged at the bottom of the refrigeration assembly (22) and is in contact with the cold trap block (21); the radiator (222) is arranged above the refrigeration fin (221); and the fan (223) is arranged above the radiator (222).
5. The apparatus for growing cadmium telluride crystals according to claim 4, wherein: The heat sink (222) comprises a base plate (2221) and a heat sink (2222); the base plate (2221) is fitted with the cooling fin (221) and is arranged above the cooling fin (221); and a plurality of heat sinks (2222) arranged in parallel are vertically arranged on the base plate (2221).
6. The apparatus for growing cadmium telluride crystals according to claim 4, wherein: The refrigeration plate (221) is connected to the power supply device (23).
7. The apparatus for growing cadmium telluride crystals according to claim 1, wherein: A heating furnace body (4) is provided outside the growth container (1), and a gap exists between the inner wall of the heating furnace body (4) and the outer wall of the growth container (1); a heater is provided in the heating furnace body (4); a cavity exists inside the heating furnace body (4), and a lifting platform (3) drives the growth container (1) to move up and down in the cavity inside the heating furnace body (4).
8. The apparatus for growing cadmium telluride crystals according to claim 1, wherein: The cadmium telluride crystal is selected from one of cadmium zinc telluride crystal and cadmium telluride crystal; the molecular formula of the cadmium telluride crystal is Cd 1-x Zn x Te 1-y Se y (x=0~0.3, y=0~0.2).