Wafer-level packaging structure of integrated inductor

Abstract

The utility model discloses a wafer-level packaging structure of an integrated inductor, which comprises a plurality of inductor metal winding coils, the plurality of inductor metal winding coils are at least respectively arranged on two layers in the packaging structure, and metal wires of the inductor metal winding coils are of a spread type structure which is wound annularly. A first terminal and a second terminal are formed on each inductance metal winding coil, each inductance metal winding coil is a single winding or two connected windings, each winding is of a circular or polygonal annular tiled winding structure, and the inductance metal winding coils are integrated in a rewiring layer to be applied to the packaging structure. The inductance metal winding coil is high in design flexibility, the inductance metal winding coil is integrated into the rewiring layer, the PCB layout is optimized, the packaging size is reduced, the space utilization rate is improved, a shorter interconnection path is achieved, and the signal transmission speed and the overall performance are improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to electronic packaging technical field more particularly relates to a wafer level packaging structure of integrated inductor. BACKGROUND

[0002] In the key field of electronic packaging technology, inductors as a kind of extremely important electronic components, play an indispensable role in electronic systems. Its core function is to store energy and filter electromagnetic interference, which is of vital importance to ensure the stable operation of electronic equipment and signal quality.

[0003] The performance level of inductor is mainly affected by the design scheme of its winding coil and the selected material. As for traditional inductors, multi-layer winding coil structure is a common design form. In this structure, engineers adjust the winding coil width and spacing to optimize the performance of inductors. This adjustment process involves complex electromagnetic principles and precise process control, because the change of winding coil width and spacing will directly affect the inductance value, quality factor and other key performance parameters.

[0004] For the integration of traditional inductor components, surface mounting is a commonly used way. In this integration mode, inductor components are usually integrated with functional chip package body on the same PCB (printed circuit board) or adapter board. In actual production process, this integration mode needs to follow strict surface mounting process flow, including component pickup, alignment, mounting and welding steps, to ensure accurate installation and good electrical connection of each component on the circuit board.

[0005] However, this traditional design and integration method has obvious limitations. The problem of large inductor size is mainly caused by the inherent space occupation characteristics of multi-layer winding coil structure and surface mounting method. Moreover, this method has low integration, which limits the possibility of integrating more functional components in unit area, which is undoubtedly a major obstacle to the trend of electronic product miniaturization, seriously affecting the performance improvement of electronic products in portability and compactness. SUMMARY

[0006] To solve the above problems, the utility model provides a wafer level packaging structure of integrated inductor, which has high flexibility in inductor coil design structure, adopts a new type of packaging structure with integrated inductor inside, has higher integration and smaller size, and meets the demand of modern electronic products for high performance and miniaturization.

[0007] According to one aspect of the utility model, a kind of integrated inductance wafer level packaging structure, it includes multiple inductance metal winding coil, multiple inductance metal winding coil is at least respectively arranged in two layers in a packaging structure, the metal wire of inductance metal winding coil is diffusion type annular winding flat structure, and each inductance metal winding coil is formed with first terminal and second terminal.

[0008] In some embodiments, the inductance metal winding coil is a single winding, the inductance metal winding coil is annular flat winding, and the first terminal and the second terminal are located inside the inner circle and outside the outer circle of the inductance metal winding coil, respectively.

[0009] Alternatively, the inductance metal winding coil is two connected windings, the two windings are composed of a metal wire and are both annular flat winding, and the first terminal and the second terminal are located inside the inner circle of the two windings.

[0010] In some embodiments, the winding of the inductance metal winding coil is a circular annular flat winding structure, or the winding of the inductance metal winding coil is a polygonal annular flat winding structure.

[0011] In some embodiments, the packaging structure further includes a substrate, a chip one attached to the substrate, a passivation layer molded on the surface of the substrate, the passivation layer wrapping the chip one and forming a chip pad opening, a redistribution layer one provided on the passivation layer, the redistribution layer one including a dielectric layer one and metal lines and inductance metal winding coils molded in the dielectric layer one, an opening formed on the dielectric layer one to realize power or signal exchange, an intermediate insulating layer provided on the redistribution layer one, the intermediate insulating layer and the redistribution layer one forming a stepped shape with a height difference, a redistribution layer two provided on the intermediate insulating layer, the redistribution layer two including a dielectric layer two and metal lines and inductance metal winding coils molded in the dielectric layer two, and an opening formed on the dielectric layer two to realize power or signal exchange.

[0012] In some embodiments, the packaging structure further includes a first redistribution layer, a second redistribution layer, and a chip two, the inductance metal winding coils are provided inside the first redistribution layer and the second redistribution layer, the chip two is interconnected with the second redistribution layer, a molding layer is provided on the second redistribution layer, the molding layer wraps the chip two, the first redistribution layer is located on the other side of the molding layer, a copper column is provided inside the molding layer, and the two ends of the copper column are interconnected with the first redistribution layer and the second redistribution layer, respectively.

[0013] In some embodiments, the surface of the second redistribution layer is planted with tin balls.

[0014] Compared with the prior art, the utility model has the beneficial effects that:

[0015] The utility model discloses a novel metal winding coil structure of inductor, which is wound in the form of annular diffusion flat paving to form a winding coil with a plane structure. The design structure of the inductor metal winding coil is flexible and can meet different application requirements. The winding coil can be an independent single winding or two connected windings. The shape of the winding coil can be diversified, such as circular annular paving or polygonal annular paving. According to actual product requirements, the shape of the winding coil can have more possibilities, greatly improving the design freedom and flexibility.

[0016] The novel inductor structure can be applied to a packaging structure to reduce the packaging size, integrate more functional inductors on the same level, reduce the required packaging layers and packaging height, optimize the PCB layout, provide space utilization, reduce the use of external components, and save valuable circuit board space.

[0017] The novel inductor structure can be applied to a packaging structure to improve performance, shorten the interconnection length, realize a shorter interconnection path between the redistribution layer and the inductor metal winding coil, reduce signal delay and electromagnetic interference, improve signal transmission speed and overall system performance, and improve inductor performance by optimizing the design of the redistribution layer (such as line width, line spacing, and layer number) and the winding coil to achieve higher inductance value and better current handling capability.

[0018] The novel inductor structure can be applied to a packaging structure to reduce the use of external inductors, reduce material costs and assembly complexity, and improve production efficiency by reducing the number of components and simplifying the assembly process. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 is a structural schematic diagram of an embodiment of the inductor metal winding coil;

[0020] Figure 2 is a structural schematic diagram of another embodiment of the inductor metal winding coil;

[0021] Figure 3 is a structural schematic diagram of another embodiment of the inductor metal winding coil;

[0022] Figure 4 is a structural schematic diagram of an embodiment of a wafer-level packaging structure integrated with an inductor;

[0023] Figure 5 is a structural schematic diagram of another embodiment of a wafer-level packaging structure integrated with an inductor. DETAILED DESCRIPTION

[0024] The utility model will be further explained in connection with specific implementation below.

[0025] Embodiment 1

[0026] As Figures 1 to 4 shown, the utility model discloses an integrated inductor wafer level packaging structure, its packaging structure includes multiple inductor metal winding coil 100, multiple inductor metal winding coil 100 at least respectively is located two layer in the packaging structure on.The metal wire of inductor metal winding coil 100 is diffusion type annular winding's flat structure, and each inductor metal winding coil 100 forms with first terminal 101 and second terminal 102.

[0027] Inductor metal winding coil 100 can be single winding, and first terminal 101 and second terminal 102 are located in the inner circle and the outer circle of inductor metal winding coil 100 respectively.That is, with a metal wire, adopt from inside to outside annular flat, outward diffusion mode winding, form a planar winding coil structure, and two terminals are arranged in the inner and outer winding coil.

[0028] Inductor metal winding coil 100 can also be two connected windings, and the two windings are composed of a metal wire and are both annular flat winding, and first terminal 101 and second terminal 102 are located in the inner circle of the two windings respectively.Specifically, with a metal wire, first adopt from inside to outside annular flat, outward diffusion mode winding, form the first planar winding coil structure, then adopt from outside to inside annular flat mode winding, form the second planar winding coil structure, so that two terminals are located in the inner two winding coils respectively.

[0029] The winding of inductor metal winding coil 100 can be a circular annular flat winding structure.The winding of inductor metal winding coil 100 can also be a polygonal annular flat winding structure, such as hexagonal, octagonal, or even other special-shaped structures.

[0030] The packaging structure of the embodiment further comprises a substrate 2, a chip 3 attached to the substrate 2, a passivation layer 4 formed on the surface of the substrate 2, the passivation layer 4 wrapping the chip 3 and having a chip pad opening 41 formed thereon, a first redistribution layer 5 formed on the passivation layer 4, the first redistribution layer 5 comprising a dielectric layer 51 and metal circuits 52 and inductor metal winding coils 100 encapsulated in the dielectric layer 51, the dielectric layer 51 having openings formed thereon to realize power or signal exchange, an intermediate insulating layer 6 formed on the first redistribution layer 5, the intermediate insulating layer 6 and the first redistribution layer 5 forming a stepped structure with a height difference, a second redistribution layer 7 formed on the intermediate insulating layer 6, the second redistribution layer 7 comprising a dielectric layer 71 and metal circuits 72 and inductor metal winding coils 100 encapsulated in the dielectric layer 71, the dielectric layer 71 having openings formed thereon to realize power or signal exchange.

[0031] The specific manufacturing steps of the packaging structure are as follows:

[0032] The substrate 2 is taken, and the chip 3 is attached to the substrate 2. The passivation layer 4 is formed on the surface of the substrate 2 by encapsulation with plastic material, and the chip pad opening 41 is formed on the passivation layer 4 to expose the chip pad. The first redistribution layer 5 is formed on the passivation layer 4, the first redistribution layer 5 comprising the dielectric layer 51 and the metal circuits 52 and inductor metal winding coils 100 encapsulated in the dielectric layer 51. The inductor metal winding coils 100 can be single or multiple winding coils with different functions according to the requirement, and the dielectric layer 51 has openings formed thereon to realize power or signal exchange. The intermediate insulating layer 6 is formed on the first redistribution layer 5 by using insulating material, the intermediate insulating layer 6 being higher than the first redistribution layer 5 to form a stepped structure with a height difference, and the intermediate insulating layer 6 not covering the openings of the first redistribution layer 5. The second redistribution layer 7 is formed on the intermediate insulating layer 6, the second redistribution layer 7 comprising the dielectric layer 71 and the metal circuits 72 and inductor metal winding coils 100 encapsulated in the dielectric layer 71. The inductor metal winding coils 100 can be single or multiple winding coils with different functions according to the requirement, and the dielectric layer 71 has openings formed thereon to realize power or signal exchange.

[0033] In this embodiment, the substrate 2 is made of silicon oxide, and a packaging structure with a step feature is designed and prepared, which includes multiple metal winding coil layers and multiple insulating layers. The width and space of the metal winding coil layers can be adjusted according to the functional requirements of the terminal product to meet the performance requirements of different inductors. In the packaging structure, high-dielectric insulating materials are introduced to improve the performance of the inductor. At the same time, by designing a special insulating layer structure, the performance of the semiconductor device can be ensured while reducing the manufacturing cost caused by the use of high-dielectric insulating materials. In the packaging structure, a specific insulating layer opening design is introduced to lead out different metal winding coil layers to realize the AC of the power supply or signal, thereby realizing the expected function. At the same time, this design can also effectively reduce the stress generated inside the thick insulating layer.

[0034] Embodiment 2

[0035] In this embodiment, the structure of the inductor metal winding coil 100 described in embodiment 1 is adopted. Embodiment 2 and embodiment 1 mainly differ in the packaging structure.

[0036] In this embodiment, as shown in Figure 5 , the packaging structure further includes a first redistribution layer 11, a second redistribution layer 15, and a chip two 12. The inductor metal winding coil 100 is integrated inside the first redistribution layer 11 and the second redistribution layer 15. The chip two 12 is interconnected with the second redistribution layer 15. The second redistribution layer 15 is provided with a plastic encapsulation layer 13. The plastic encapsulation layer 13 wraps the chip two 12. The first redistribution layer 11 is located on the other side of the plastic encapsulation layer 13. The plastic encapsulation layer 13 is penetrated by a copper pillar 14. The two ends of the copper pillar 14 are interconnected with the first redistribution layer 11 and the second redistribution layer 15, respectively. The surface of the second redistribution layer 15 is planted with tin balls 16.

[0037] The specific manufacturing steps of the packaging structure of this embodiment are as follows:

[0038] The second redistribution layer 15 is manufactured. The second redistribution layer 15 has a dielectric layer 151 and multiple metal lines 152, and the inductor metal winding coil 100 with different features is integrated inside. The chip two 12 is flip-chip mounted on the second redistribution layer 15, and is interconnected through tin balls 121. The plastic encapsulation layer 13 is formed by encapsulating the second redistribution layer 15 with plastic encapsulation material, and the plastic encapsulation layer 13 wraps the chip two 12. The through hole penetrating the plastic encapsulation layer 13 is processed on the plastic encapsulation layer 13, and the copper pillar 14 is formed by filling copper in the through hole. The two ends of the copper pillar 14 are interconnected with the first redistribution layer 11 and the second redistribution layer 15, respectively. The first redistribution layer 11 is manufactured on the plastic encapsulation layer 13. The first redistribution layer 11 has a dielectric layer 111 and multiple metal lines 112, and the inductor metal winding coil 100 with different features is integrated inside. The tin balls 16 are planted on the other side of the second redistribution layer 15.

[0039] In this embodiment, the inductance function coil structure is integrated into the two layers of the re-distribution layer in the vertical direction of the chip package, which can reduce the lateral area of the package, improve the integration level, and also reduce the manufacturing cost and production difficulty.

[0040] The coil structure with different characteristics is designed in the first re-distribution layer 11, which is connected with the copper column 14 structure on one side, and the other end of the copper column 14 is connected with the second re-distribution layer 15. Such design can effectively reduce the signal transmission delay and signal interference problem, thereby improving the performance of the circuit.

[0041] The functional chip and the copper column 14 are connected on one side of the second re-distribution layer 15, and the other side is provided with a tin ball 16 for welding the substrate 2 to connect the external circuit. At the same time, the second re-distribution layer 15 is also designed with different characteristic structures with inductance function, and the coupling coefficient between the inductances can be adjusted by adjusting the connection distance between the coils of the first re-distribution layer 11 and the second re-distribution layer 15. Such design can enhance the reliability and service life of the packaging structure.

[0042] The utility model discloses a novel inductance metal winding coil structure adopts the form of annular diffusion flat paving and is wound, forms a winding coil of plane structure, and the design structure flexibility of inductance metal winding coil 100 can satisfy different application demand, and winding coil can be independent single winding, can also be two connected windings, and the shape of winding coil can also be diversified, for example, circular annular flat paving, polygonal annular flat paving, according to actual product demand, the shape of winding coil can have more possibilities, greatly improve the design freedom and flexibility.

[0043] The novel inductance structure is applied to the packaging structure, the packaging size can be reduced, more functional inductances can be integrated on the same level, the required packaging layers and packaging height can be reduced. By integrating the inductance function into the re-distribution layer, the PCB layout can be optimized, the space utilization rate can be provided, the use of external components can be reduced, and the valuable circuit board space can be saved. The novel inductance structure is applied to the packaging structure, the performance can be improved, the interconnection length can be shortened, the re-distribution layer and the inductance metal winding coil 100 can realize shorter interconnection paths, signal delay and electromagnetic interference can be reduced, signal transmission speed and overall system performance can be improved. By optimizing the design of the re-distribution layer (such as line width, line spacing and layer number) and the winding coil, higher inductance value and better current handling capacity can be realized. At the same time, the use of external inductors can be reduced, the material cost and assembly complexity can be reduced, and the production efficiency can be improved.

[0044] The above merely describes some embodiments of the present application, and it should be pointed out that, for those skilled in the art, other transformations and improvements can be made without departing from the creative concept of the present application, and these all belong to the protection scope of the present application.

Claims

1. A wafer-level packaging structure of an integrated inductor, characterized in that: It includes multiple inductive metal winding coils, which are respectively arranged on at least two levels in a packaging structure. The metal wires of the inductive metal winding coils are a flat structure with diffused ring windings, and each of the inductive metal winding coils is formed with a first terminal and a second terminal.

2. The wafer-level packaging structure of the integrated inductor according to claim 1, wherein: The inductive metal winding coil is a single winding, the inductive metal winding coil is annularly flat-wound, and the first terminal and the second terminal are respectively located inside the inner circle and outside the outer circle of the inductive metal winding coil; Alternatively, the inductive metal winding coil is two connected windings, the two windings are composed of a metal wire and are both wound in a ring-shaped flat manner, and the first terminal and the second terminal are respectively located in the inner circles of the two windings.

3. The wafer-level packaging structure of the integrated inductor according to claim 2, wherein: The winding of the inductive metal winding coil is a circular annular flat winding structure, or the winding of the inductive metal winding coil is a polygonal annular flat winding structure.

4. The wafer-level packaging structure of the integrated inductor according to claim 3, wherein: The packaging structure also includes a substrate and a chip mounted on the substrate. A passivation layer is plastic-sealed on the surface of the substrate. The passivation layer wraps the chip and forms a chip pad opening. A redistribution layer is provided on the passivation layer. The redistribution layer includes a dielectric layer and a metal line and an inductor metal winding coil plastic-sealed in the dielectric layer. An opening is formed on the dielectric layer to achieve power or signal exchange. An intermediate insulating layer is provided on the redistribution layer. The intermediate insulating layer and the redistribution layer form a step shape with a height difference. A redistribution layer 2 is provided on the intermediate insulating layer. The redistribution layer 2 includes a dielectric layer 2 and a metal line and an inductor metal winding coil plastic-sealed in the dielectric layer 2. An opening is formed on the dielectric layer 2 to achieve power or signal exchange.

5. The wafer-level packaging structure of the integrated inductor according to claim 3, wherein: The packaging structure also includes a first redistribution layer, a second redistribution layer, and chip two. The first redistribution layer and the second redistribution layer are both provided with inductive metal winding coils. The chip two is interconnected with the second redistribution layer. The second redistribution layer is provided with a plastic encapsulation layer, which wraps the chip two. The first redistribution layer is located on the other side of the plastic encapsulation layer. A copper column runs through the plastic encapsulation layer, and the two ends of the copper column are respectively interconnected with the first redistribution layer and the second redistribution layer.

6. The wafer-level packaging structure of the integrated inductor according to claim 5, characterized in that: The surface of the second redistribution layer is planted with solder balls.

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