Bulk acoustic wave resonator and electronic equipment

Abstract

The utility model discloses a bulk acoustic wave resonator and an electronic device. The bulk acoustic wave resonator comprises a substrate; the substrate is provided with a first through hole penetrating through the thickness direction; the supporting layer is positioned on one side of the substrate; the supporting layer is provided with an air groove penetrating through the thickness direction, and the first through hole is communicated with the air groove; the resonance layer is located on the side, away from the substrate, of the supporting layer and covers the air groove, and the resonance layer is used for converting electric signals into bulk acoustic waves propagating in the thickness direction; the heat conduction structure is located on one side, close to the substrate, of the resonance layer; one end of the heat conduction structure is in contact with the resonance layer, and the other end of the heat conduction structure sequentially penetrates through the air groove and the first through hole.

Description

TECHNICAL FIELD

[0001] The utility model relates to electronic technical field especially relates to a bulk acoustic resonator, electronic equipment. BACKGROUND

[0002] With the rapid development of mobile communication technology, the application of many radio frequency devices has increased substantially, among which the filter market will grow explosively.

[0003] At present, the filter device applied in personal mobile terminal (such as mobile phone) is mainly piezoelectric acoustic wave filter, and the resonator constituting this kind of filter is mainly film bulk acoustic resonator (FBAR), solidly mounted resonator (SMR) and surface-acoustic-wave (SAW), wherein FBAR and SMR are collectively referred to as bulk acoustic resonator.

[0004] However, the bulk acoustic resonator inevitably generates heat during operation, which will cause significant negative effects, such as causing the resonator frequency to drift due to the resonator temperature rising, or accelerating the aging of the piezoelectric structure, and even directly causing damage, thereby affecting the reliability and life of the resonator, and limiting the further improvement of the resonator power capacity.

[0005] Therefore, reducing the heat generated by the bulk acoustic resonator during operation has become a technical problem to be solved. SUMMARY

[0006] The embodiment of the utility model provides a bulk acoustic resonator and electronic equipment to solve the technical problem that the heat generated by the bulk acoustic resonator in the prior art has many negative effects.

[0007] In a first aspect, to solve the above technical problem, the embodiment of the utility model provides a bulk acoustic resonator, comprising:

[0008] A substrate substrate has a first through hole penetrating in the thickness direction;

[0009] A support layer is located on one side of the substrate substrate; the support layer has an air groove penetrating the thickness direction, and the first through hole and the air groove are communicated;

[0010] A resonant layer is located on the side of the support layer away from the substrate substrate and covers the air groove, and the resonant layer is used for converting electrical signals into bulk acoustic waves propagating in the thickness direction;

[0011] A heat-conducting structure is located on the side of the resonant layer close to the substrate. One end of the heat-conducting structure is in contact with the resonant layer, and the other end of the heat-conducting structure sequentially passes through the air slot and the first through-hole.

[0012] In a possible implementation, the support layer comprises:

[0013] At least one total reflection structure surrounds the air slot, and the total reflection structure is used to prevent the leakage of a transverse wave generated along with the bulk acoustic wave, the propagation direction of the transverse wave being perpendicular to the thickness direction.

[0014] In a possible implementation, the total reflection structure comprises:

[0015] A first structure and a second structure;

[0016] The first structure is located in an inner layer, and the second structure is located in an outer layer. The impedance of the first structure is lower than the impedance of the second structure.

[0017] In a possible implementation, the substrate further comprises a second through-hole penetrating the thickness direction.

[0018] The total reflection structure extends to the side of the substrate away from the resonant layer through the second through-hole.

[0019] In a possible implementation, the heat-conducting structure comprises:

[0020] A heat-absorbing structure is located on the side of the resonant layer close to the substrate and is in contact with at least part of the resonant layer and the air slot.

[0021] A heat-dissipating structure is located on the side of the heat-absorbing structure close to the substrate. One end of the heat-dissipating structure is connected to the heat-absorbing structure, and the other end of the heat-dissipating structure is located in the first through-hole.

[0022] In a possible implementation, the heat-absorbing structure has a larger orthographic projection area on the substrate than the heat-dissipating structure.

[0023] In a possible implementation, the orthographic projection of the heat-absorbing structure on the substrate is located within the orthographic projection of the air slot on the substrate.

[0024] In a possible implementation, the heat-absorbing structure coincides with the resonant layer.

[0025] In a possible implementation, the resonant layer comprises:

[0026] A first electrode layer is located on the side of the support layer away from the substrate.

[0027] a piezoelectric layer on a side of the first electrode layer distal from the substrate;

[0028] a second electrode layer on a side of the piezoelectric layer distal from the substrate.

[0029] One possible implementation further comprises:

[0030] a metal layer on a side of the second electrode layer distal from the substrate.

[0031] In a second aspect, the embodiments of the utility model provide an electronic equipment, including the bulk acoustic wave resonator as described in first aspect. BRIEF DESCRIPTION OF DRAWINGS

[0032] Figure 1 It is a structure schematic diagram of a FBAR;

[0033] Figure 2 It is a structure schematic diagram of a SMR;

[0034] Figure 3 It is a structure schematic diagram of a bulk acoustic wave resonator provided by the embodiments of the utility model;

[0035] Figure 4 It is a structure schematic diagram of a heat conduction structure provided by the embodiments of the utility model;

[0036] Figure 5 It is a structure schematic diagram of another heat conduction structure provided by the embodiments of the utility model;

[0037] Figure 6 It is a structure schematic diagram of another heat conduction structure provided by the embodiments of the utility model;

[0038] Figure 7 It is a structure schematic diagram of another bulk acoustic wave resonator provided by the embodiments of the utility model;

[0039] Figure 8 It is a structure schematic diagram of a total reflection structure provided by the embodiments of the utility model;

[0040] Figure 9 It is a structure schematic diagram of another bulk acoustic wave resonator provided by the embodiments of the utility model;

[0041] Figure 10 It is a structure schematic diagram of another bulk acoustic wave resonator provided by the embodiments of the utility model;

[0042] Figure 11 It is a structure schematic diagram of another bulk acoustic wave resonator provided by the embodiments of the utility model.

[0043] REFERENCE SIGNS:

[0044] First substrate 01, groove N, first bottom electrode 02, first piezoelectric layer 03, first top electrode 04;

[0045] Second substrate 01', Bragg reflection layer 02', high acoustic impedance layer 021', low acoustic impedance layer 022', second bottom electrode 03', second piezoelectric layer 04', second top electrode 05';

[0046] Substrate 1, first via H1, support layer 2, air slot M, resonant layer 3, heat conduction structure 4, thickness direction Y, heat absorption structure 41, heat dissipation structure 42, first structure 211, second structure 212, second via H2, first electrode layer 31, piezoelectric layer 32, second electrode layer 33, metal layer 5. DETAILED DESCRIPTION

[0047] The body acoustic wave resonator, the manufacturing method thereof and the electronic device are used to solve the technical problem of the negative effect caused by the heat generated by the body acoustic wave resonator in the prior art.

[0048] It should be understood that the specific structures and functional details disclosed in the embodiments of the present application are merely representative, and are for the purpose of describing the exemplary embodiments of the present application. However, the present application can be embodied in many alternative forms or combinations, and should not be interpreted as being limited to the embodiments described herein.

[0049] In the description of the present application, it should be understood that the terms "center", "transverse", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features limited by "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise stated, the meaning of "a plurality of" is two or more. In addition, the term "comprising" and any variations thereof are intended to cover non-exclusive inclusion.

[0050] In the description of the application, it is necessary to explain that, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be connected inside two elements. For those skilled in the art, the specific meaning of the above terms in this application can be understood according to the specific circumstances.

[0051] The terms used in the present application are only used to describe specific embodiments and are not intended to limit the exemplary embodiments. Unless the context clearly indicates otherwise, the singular form "a", "an", "one" used herein is also intended to include the plural. It should also be understood that the terms "include" and / or "contain" used herein specify the existence of the stated features, integers, steps, operations, units and / or components, and do not exclude the existence or addition of one or more other features, integers, steps, operations, units, components and / or combinations thereof.

[0052] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application will be further described below with reference to the drawings and examples. However, the example embodiments can be implemented in various forms, and should not be understood as being limited to the embodiments described herein; on the contrary, these embodiments are provided to make the present application more comprehensive and complete, and to fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the drawings represent the same or similar structures, so repeated description thereof will be omitted. The words expressing position and direction described in the present application are described with reference to the drawings, but changes can also be made as needed, and the changes made are included in the scope of protection of the present application. The drawings of the present application are only used to illustrate the relative positional relationship and do not represent the true proportions.

[0053] It should be noted that in the following description, specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be implemented in various other ways different from those described herein, and those skilled in the art can make similar generalizations without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below. The subsequent description of the specification is a preferred embodiment for implementing the present application, and the description is for the purpose of illustrating the general principles of the present application, and is not intended to limit the scope of the present application. The scope of protection of the present application is defined by the appended claims.

[0054] Please refer to Figure 1 and Figure 2 , Figure 1 is a structural schematic diagram of an FBAR, Figure 2 is a structural schematic diagram of an SMR.

[0055] As shown in Figure 1 FBAR includes:

[0056] a first substrate 01, one side of the first substrate 01 having a groove N;

[0057] a first bottom electrode 02, located on the side of the groove N of the first substrate 01; the first bottom electrode 02 closes the opening of the groove N in the first substrate 01, thereby forming a cavity;

[0058] a first piezoelectric layer 03, located on the side of the first bottom electrode 02 away from the first substrate 01;

[0059] a first top electrode 04, located on the side of the first piezoelectric layer 03 away from the first substrate 01.

[0060] FBAR utilizes the acoustic impedance of air in the cavity to be approximately equal to zero to achieve total reflection of interface acoustic waves, which has high quality factor and is easy to integrate, but since air is a poor conductor of heat, the heat generated by FBAR can easily cause the temperature of the device to rise, thereby causing the resonance frequency to shift, affecting the filtering performance, and the air cavity structure affects the mechanical firmness.

[0061] As shown in Figure 2 SMR includes:

[0062] a second substrate 01';

[0063] a Bragg reflection layer 02' located on one side of the second substrate 01', the Bragg reflection layer 02' including high acoustic impedance layers 021' and low acoustic impedance layers 022' stacked alternately;

[0064] a second bottom electrode 03', located on the side of the high acoustic impedance layer 021' and the low acoustic impedance layer 022' away from the second substrate 01';

[0065] a second piezoelectric layer 04', located on the side of the second bottom electrode 03' away from the second substrate 01';

[0066] a second top electrode 05', located on the side of the second piezoelectric layer 04' away from the second substrate 01'.

[0067] SMR is based on the Bragg reflection layer 02' composed of high acoustic impedance layers 021' and low acoustic impedance layers 022' to achieve total reflection. The Bragg reflection layer 02' of this structure brings a certain degree of acoustic wave leakage, so the quality factor is relatively low, and the thickness of each film layer in the Bragg reflection layer 02' is required to be higher, which increases the difficulty of preparation, but improves the mechanical firmness and heat dissipation performance.

[0068] However, when the bulk acoustic resonator is excited by a longitudinal wave (bulk acoustic wave), a transverse wave is generated, thereby generating a parasitic resonance, and affecting the performance of the SMR.

[0069] In order to solve the problems of the bulk acoustic resonator, the utility model provides a bulk acoustic resonator, a manufacturing method thereof and an electronic device, which will be described in detail below with reference to the drawings.

[0070] Please refer to Figure 3 A bulk acoustic resonator provided by the utility model embodiment has the structure as shown in the figure, and the bulk acoustic resonator comprises:

[0071] The substrate substrate 1 has a first through hole H1 penetrating through the thickness direction Y; the material of the substrate substrate 1 can be ceramic, glass material, Si, GaAs or sapphire, etc.

[0072] The support layer 2 is located on one side of the substrate substrate 1; the support layer 2 has an air groove M penetrating through the thickness direction Y, and the first through hole H1 is communicated with the air groove M;

[0073] The resonant layer 3 is located on the side, away from the substrate substrate 1, of the support layer 2 and covers the air groove M; the resonant layer 3 is used for converting an electrical signal into a bulk acoustic wave propagating along the thickness direction Y; the substrate substrate 1 and the resonant layer 3 respectively seal two openings of the air groove M in the support layer 2, so as to form a cavity, and the bulk acoustic wave generated by the resonant layer 3 is totally reflected at the interface of the cavity;

[0074] The heat conduction structure 4 is located on the side, close to the substrate substrate 1, of the resonant layer 3; one end of the heat conduction structure 4 is in contact with the resonant layer 3, and the other end of the heat conduction structure 4 sequentially passes through the air groove M and the first through hole H1.

[0075] In the embodiment provided by the utility model, the heat conduction structure 4 is arranged on the side, close to the substrate substrate 1, of the resonant layer 3, one end of the heat conduction structure 4 is in contact with the resonant layer 3, and the other end of the heat conduction structure 4 sequentially passes through the air groove M and the first through hole H1; the heat conduction structure 4 can be used to conduct the heat in the resonant layer 3 and the cavity to the outside, reduce the heat generated by the bulk acoustic resonator during operation, and reduce the negative effects caused by the heat; and the resonant layer 3 can be effectively supported, so that the structural strength of the cavity is improved.

[0076] Please refer to Figure 4 The heat conduction structure 4 provided by the utility model embodiment has the structure as shown in the figure, and the heat conduction structure 4 comprises:

[0077] The heat absorption structure 41 is located on the side, close to the substrate substrate 1, of the resonant layer 3 and is in contact with at least part of the resonant layer 3 and the air groove M;

[0078] The heat dissipation structure 42 is located on the side of the heat absorption structure 41 close to the substrate 1, and one end of the heat dissipation structure 42 is connected with the heat absorption structure 41 and the other end is located in the first through hole H1.

[0079] The heat absorption structure 41 can be made of inorganic materials such as silicon dioxide, aluminum nitride, aluminum oxide, silicon nitride, beryllium oxide, polycrystalline diamond (PCD), monocrystalline silicon, polycrystalline silicon, germanium, and organic materials such as silicon-containing polymers and epoxy resin, or metal materials such as gold, or a composite of the above materials.

[0080] In some embodiments, the thickness of the heat dissipation structure 42 is in the range of 8-13 um.

[0081] The heat dissipation structure 42 can be made of metal materials such as copper, gold, silver, and aluminum, non-metal materials such as diamond and high-thermal-conductivity silicon, or a composite of the above materials.

[0082] By arranging the heat absorption structure 41 in contact with the resonant layer 3 and the air groove M on the side of the resonant layer 3 close to the substrate 1, the heat absorption structure 41 can quickly absorb the heat in the resonant layer 3 and the air groove M. By arranging the heat dissipation structure 42 connected with the heat absorption structure 41 on the side of the heat absorption structure 41 close to the substrate 1, the heat absorbed by the heat absorption structure 41 and the heat in the air groove M can be quickly transferred to the outside of the bulk acoustic wave sensor, thereby reducing the heat generated by the bulk acoustic wave resonator.

[0083] Please refer to Figure 5 The heat absorption structure 41 has a larger area in the orthogonal projection on the substrate 1 than the heat dissipation structure 42, so that the heat absorption structure 41 can absorb more heat from the resonant layer 3, which is conducive to quickly reducing the heat generated by the bulk acoustic wave resonator during operation.

[0084] Please refer to Figure 5 The orthogonal projection of the heat absorption structure 41 on the substrate 1 is located within the orthogonal projection of the air groove M on the substrate 1. By arranging the orthogonal projection of the heat absorption structure 41 on the substrate 1 within the orthogonal projection of the air groove M on the substrate 1, the heat absorption structure 41 is accommodated in the air groove M and in contact with the resonant layer 3, so that the heat absorption structure 41 can absorb the heat in the resonant layer 3 and the air groove M and transfer the heat to the outside of the bulk acoustic wave resonator through the heat dissipation structure 42.

[0085] Please refer to Figure 6Another structure diagram of the heat conduction structure 4 is provided for the embodiment of the utility model, in the heat conduction structure 4, the heat absorption structure 41 is coincident with the resonance layer 3, so that the contact area of the heat absorption structure 41 and the resonance layer 3 can be maximized, the heat generated by the resonance layer 3 is conveniently exported outside the bulk acoustic wave resonator by the heat dissipation structure 42 through the heat absorption structure 41, so as to reduce the heat generated by the bulk acoustic wave resonator when working, and reduce the negative factors caused by the heat.

[0086] Please see Figure 7 Another structure diagram of the bulk acoustic wave resonator is provided for the embodiment of the utility model, the support layer 2 in the bulk acoustic wave resonator includes:

[0087] At least one total reflection structure, the total reflection structure surrounds the air slot M, and the total reflection structure is used for preventing the leakage of the transverse wave generated along with the bulk acoustic wave, and the propagation direction of the transverse wave is perpendicular to the thickness direction Y.

[0088] One layer of the total reflection structure surrounding the air slot M can be arranged around the air slot M, as shown in Figure 7 Two layers of the total reflection structure surrounding the air slot M can also be arranged, and of course, more layers of the total reflection structure surrounding the air slot M can also be arranged, so that the leakage of the transverse wave generated along with the bulk acoustic wave can be prevented, and further, the parasitic resonance can be reduced or even prevented.

[0089] Please see Figure 8 A structure diagram of the total reflection structure is provided for the embodiment of the utility model, the total reflection structure includes:

[0090] The first structure 211 and the second structure 212;

[0091] The first structure 211 is located at the inner layer, and the second structure 212 is located at the outer layer, and the impedance of the first structure 211 is lower than that of the second structure 212.

[0092] The material of the first structure 211 can be a material with low impedance and good heat dissipation, such as copper, gold, silver, aluminum and other metal materials, diamond, high-thermal-conductivity silicon and other non-metallic materials or a composite of the above materials; and the material of the second structure 212 can include at least one of silicon dioxide and high-resistance silicon.

[0093] In some embodiments, the thickness of the first structure 211 and the second structure 212 ranges from 8 to 13 um.

[0094] By adopting the first structure 211 with low impedance at the inner layer and the second structure 212 with high impedance at the outer layer, the leakage of the transverse wave can be prevented, the resonance layer 3 can be effectively supported, and the heat in the air slot M and the heat of the total reflection layer can be dissipated by the total reflection structure, further reducing the heat of the bulk acoustic wave resonator.

[0095] Referring to Figure 9 Another structure diagram of the body acoustic wave resonator provided by the embodiment of the utility model, the substrate substrate 1 still includes the second through hole H2 which extends through the thickness direction Y,

[0096] The total reflection structure extends to the side of the substrate substrate 1 away from the resonant layer 3 through the second through hole H2.

[0097] By setting the second through hole H2 which extends through the thickness direction Y on the substrate substrate 1, and letting the total reflection structure extend to the side of the substrate substrate 1 away from the resonant layer 3 through the second through hole H2, not only can the total reflection structure be used to prevent the transverse wave leakage, but also the total reflection structure can be used to transmit the heat in the resonant layer 3 and the air slot M to the outside of the body acoustic wave resonator, so as to further prevent the heat from accumulating inside the body acoustic wave resonator, and reduce the heat of the body acoustic wave resonator.

[0098] Referring to Figure 10 Another structure diagram of the body acoustic wave resonator provided by the embodiment of the utility model,

[0099] The resonant layer 3 includes:

[0100] The first electrode layer 31 is located on the side of the support layer 2 away from the substrate substrate 1;

[0101] The piezoelectric layer 32 is located on the side of the first electrode layer 31 away from the substrate substrate 1;

[0102] The second electrode layer 33 is located on the side of the piezoelectric layer 32 away from the substrate substrate 1.

[0103] The material of the first electrode layer 31 and the second electrode layer 33 can be any one or any combination of platinum, aluminum and molybdenum, and the material of the piezoelectric layer 32 can be aluminum nitride, zinc oxide, lead zirconate titanate (PZT) and the like.

[0104] In some embodiments, the thickness of the first electrode layer 31 and the second electrode layer 33 ranges from 0.15 to 0.25 um, and the thickness of the piezoelectric layer 32 ranges from 0.8 to 2 um.

[0105] Referring to Figure 11 Another structure diagram of the body acoustic wave resonator provided by the embodiment of the utility model, the body acoustic wave resonator still includes:

[0106] The metal layer 5 is located on the side of the second electrode layer 33 away from the substrate substrate 1.

[0107] The material of the metal layer 5 can be copper, gold, silver, aluminum and the like.

[0108] By arranging the metal layer 5 on the side of the second electrode layer 33 away from the substrate 1, the impedance of the second electrode layer 33 can be changed by changing the thickness of the metal layer 5, and the resonant frequency of the resonant layer 3 is corrected, and the heat generated by the resonant layer 3 can be quickly dissipated by the metal layer 5, thereby further improving the heat dissipation effect of the bulk acoustic wave resonator.

[0109] Based on the same inventive concept, the utility model embodiment provides an electronic device, including the bulk acoustic wave resonator as described above.

[0110] Although the preferred embodiments of the utility model have been described, those skilled in the art can make additional changes and modifications to these embodiments once the basic creative concept is known. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications falling within the scope of the utility model.

[0111] Obviously, those skilled in the art can make various modifications and variations to the utility model without departing from the spirit and scope of the utility model. Thus, if these modifications and variations of the utility model fall within the scope of the claims of the utility model and their equivalents, the utility model also intends to include these modifications and variations.

Claims

1. A bulk acoustic wave resonator, characterized in that: include: substrate; The base substrate has a first through hole extending through the thickness direction; A supporting layer is located on one side of the base substrate; The supporting layer has an air groove running through the thickness direction, and the first through hole is connected to the air groove; a resonance layer, located on a side of the support layer away from the substrate and covering the air slot, the resonance layer being configured to convert an electrical signal into a bulk acoustic wave propagating along a thickness direction; A heat-conducting structure is located on a side of the resonance layer close to the base substrate; one end of the heat-conducting structure contacts the resonance layer, and the other end of the heat-conducting structure passes through the air groove and the first through hole in sequence.

2. The bulk acoustic wave resonator according to claim 1, wherein The supporting layer comprises: At least one total reflection structure surrounds the air slot, and the total reflection structure is used to prevent leakage of shear waves generated by the bulk acoustic wave, wherein a propagation direction of the shear waves is perpendicular to the thickness direction.

3. The bulk acoustic wave resonator according to claim 2, wherein The total reflection structure comprises: a first structure and a second structure; The first structure is located in the inner layer, the second structure is located in the outer layer, and the impedance of the first structure is lower than the impedance of the second structure.

4. The bulk acoustic wave resonator according to claim 3, wherein The base substrate further includes a second through hole penetrating the thickness direction; The total reflection structure extends through the second through hole to a side of the base substrate away from the resonance layer.

5. The bulk acoustic wave resonator according to any one of claims 1 to 4, characterized in that: The heat-conducting structure comprises: a heat absorption structure, located on a side of the resonance layer close to the base substrate and in contact with at least a portion of the resonance layer and the air groove; The heat dissipation structure is located on a side of the heat absorption structure close to the base substrate; one end of the heat dissipation structure is connected to the heat absorption structure, and the other end is located in the first through hole.

6. The bulk acoustic wave resonator according to claim 5, wherein The orthographic projection area of ​​the heat absorption structure on the base substrate is larger than the orthographic projection area of ​​the heat dissipation structure on the base substrate.

7. The bulk acoustic wave resonator according to claim 5, wherein The orthographic projection of the heat absorption structure on the base substrate is located within the orthographic projection of the air groove on the base substrate.

8. The bulk acoustic wave resonator according to claim 5, wherein The heat absorption structure overlaps with the resonance layer.

9. The bulk acoustic wave resonator according to any one of claims 1 to 4, characterized in that: The resonance layer comprises: a first electrode layer, located on a side of the support layer away from the substrate; a piezoelectric layer, located on a side of the first electrode layer away from the substrate; The second electrode layer is located on a side of the piezoelectric layer away from the substrate.

10. The bulk acoustic wave resonator according to claim 9, wherein Also includes: The metal layer is located on a side of the second electrode layer away from the base substrate.

11. An electronic device, characterized in that: The device comprises a bulk acoustic wave resonator according to any one of claims 1 to 10.

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