Intelligent electronic switch, integrated circuit chip, chip product and automobile

Abstract

The utility model provides an intelligent electronic switch, an integrated circuit chip, a chip product and an automobile, and the intelligent electronic switch comprises a control circuit, a main power switch, a first temperature detection element, an over-temperature protection circuit, a bypass switch and a second temperature detection element. The over-temperature protection circuit obtains the temperature value of the main power switch through the first temperature detection element to carry out over-temperature protection on the main power switch after the first mode is switched on, the bypass switch is switched on after the bypass mode is switched on, and the over-temperature protection circuit obtains the temperature value of the bypass switch through the second temperature detection element to carry out over-temperature protection on the bypass switch. According to the technical scheme, the main power switch and the bypass switch are accurately protected, the problem that the main power switch or the bypass switch is possibly damaged due to too high temperature is avoided, the newly added bypass mode does not interfere with the original function of the intelligent electronic switch, and the working reliability of the intelligent electronic switch is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of intelligent semiconductor switch, in particular to an intelligent electronic switch, an integrated circuit chip, a chip product and an automobile. BACKGROUND

[0002] The intelligent electronic switch is usually used for coupling a load and a battery, is an electronic element for controlling the on-off of a load circuit, and is widely applied in the fields of automobile electronics, industrial automation, medical equipment, etc. Since the types of the connected loads are various and the working environment is harsh, the reliability of the intelligent electronic switch is particularly required by the application end. Therefore, various protection functions are integrated in the intelligent electronic switch to improve the reliability of the intelligent electronic switch.

[0003] In the prior art, a temperature detection circuit is arranged in the intelligent electronic switch, which is arranged around a power switch to detect the temperature of the power switch when the intelligent electronic switch is in a normal working mode, and to trigger the power switch to be turned off when the temperature is too high to prevent the power switch from being damaged due to the temperature being too high.

[0004] However, when the intelligent electronic switch works in other modes, such as a low-power mode, the temperature detection circuit does not work to reduce the power consumption of the intelligent electronic switch, but in this case, if the power switch continuously generates heat due to some faults, the problem of the power switch being damaged due to the temperature being too high may still exist. SUMMARY

[0005] The present application provides an intelligent electronic switch, an integrated circuit chip, a chip product and an automobile to solve the problem that the power switch of the intelligent electronic switch may be damaged due to the temperature being too high.

[0006] In a first aspect, the present application provides an intelligent electronic switch, comprising a power supply end, a power ground end, a load output end, a control circuit, a main power switch, a first temperature detection element and an over-temperature protection circuit.

[0007] The power supply end and the power ground end are used for connecting with a battery, and the load output end is used for connecting with a load. A first end of the main power switch is connected with the power supply end or the power ground end, a second end of the main power switch is connected with the load output end, a control end of the main power switch is connected with the control circuit, the first temperature detection element is connected with the over-temperature protection circuit and is arranged adjacent to the main power switch or is embedded in the main power switch, and the over-temperature protection circuit is further connected with the control circuit.

[0008] In the normal operation mode, the control circuit controls the first switch unit to be turned on, so as to turn on the first detection branch, at this time, the voltage of the first temperature detection point is used to represent the temperature value of the main power switch, and the over-temperature protection circuit is used to compare the voltage of the first temperature detection point with a first voltage threshold value to determine whether to output a first over-temperature signal, the first voltage threshold value corresponds to the first temperature threshold value.

[0009] The intelligent electronic switch further comprises a bypass switch and a second temperature detection element, the first end and the second end of the bypass switch are connected with the first end and the second end of the main power switch respectively, the control end of the bypass switch is connected with the control circuit, and the second temperature detection element is connected with the over-temperature protection circuit and is arranged adjacent to the bypass switch or is embedded in the bypass switch.

[0010] In the bypass mode, the control circuit drives the bypass switch to be turned on, the over-temperature protection circuit obtains the temperature value of the bypass switch through the second temperature detection element, and outputs a second over-temperature signal when the temperature value of the bypass switch is higher than a second temperature threshold value, so as to control the bypass switch to be turned off.

[0011] Optionally, the intelligent electronic switch further comprises a first element, the first element is connected with the first temperature detection element through a first switch unit to form a first detection branch, and the first element is connected with the second temperature detection element through a second switch unit to form a second detection branch, the over-temperature protection circuit is connected with a first temperature detection point on the first detection branch and a second temperature detection point on the second detection branch.

[0012] In the normal operation mode, the control circuit controls the first switch unit to be turned on, so as to turn on the first detection branch, at this time, the voltage of the first temperature detection point is used to represent the temperature value of the main power switch, and the over-temperature protection circuit is used to compare the voltage of the first temperature detection point with a first voltage threshold value to determine whether to output a first over-temperature signal, the first voltage threshold value corresponds to the first temperature threshold value.

[0013] In the bypass mode, the control circuit controls the second switch unit to be turned on, so as to turn on the second detection branch, at this time, the voltage of the second temperature detection point is used to represent the temperature value of the bypass switch, and the over-temperature protection circuit is used to compare the voltage of the second temperature detection point with a second voltage threshold value to determine whether to output a second over-temperature signal, the second voltage threshold value corresponds to the second temperature threshold value.

[0014] Optionally, the intelligent electronic switch further comprises a third temperature detection element, the third temperature detection element is arranged at a third position in the intelligent electronic switch, the third position is away from the first position where the first temperature detection element is arranged and away from the second position where the second temperature detection element is arranged, and the third temperature detection element is connected with the over-temperature protection circuit.

[0015] The over-temperature protection circuit is further configured to obtain a first ambient temperature value of the main power switch via the third temperature detection element in the normal working mode, and output a first over-temperature signal when a first temperature difference value between a temperature value of the main power switch and the first ambient temperature value is greater than a first temperature difference threshold, so as to control the control circuit to control the main power switch to be turned off; and obtain a second ambient temperature value of the bypass switch via the third temperature detection element in the bypass mode, and output a second over-temperature signal when a second temperature difference value between a temperature value of the bypass switch and the second ambient temperature value is greater than a second temperature difference threshold, so as to control the control circuit to control the bypass switch to be turned off.

[0016] Optionally, the bypass switch is arranged away from the main power switch.

[0017] In the normal working mode, the over-temperature protection circuit is further configured to obtain a first ambient temperature value of the main power switch via the second temperature detection element, and output a first over-temperature signal when a first temperature difference value between a temperature value of the main power switch and the first ambient temperature value is greater than a first temperature difference threshold, so as to control the control circuit to control the main power switch to be turned off.

[0018] In the bypass mode, the over-temperature protection circuit is further configured to obtain a second ambient temperature value of the bypass switch via the first temperature detection element, and output a second over-temperature signal when a second temperature difference value between a temperature value of the bypass switch and the second ambient temperature value is greater than a second temperature difference threshold, so as to control the control circuit to control the bypass switch to be turned off.

[0019] Optionally, the over-temperature protection circuit is further configured to output a first over-temperature release signal when the first temperature difference value is less than a third temperature difference threshold and the temperature value of the main power switch is less than a third temperature threshold, so as to control the control circuit to control the main power switch to be turned on again; and output the second over-temperature release signal when the second temperature difference value is less than a second temperature difference threshold and the temperature value of the bypass switch is less than a fourth temperature threshold, so as to control the control circuit to control the bypass switch to be turned on again.

[0020] The third temperature difference threshold is less than the first temperature difference threshold, the fourth temperature difference threshold is less than the second temperature difference threshold, the third temperature threshold is less than the first temperature threshold, and the fourth temperature threshold is less than the second temperature threshold.

[0021] Optionally, in the normal working mode, the over-temperature protection circuit is further configured to adjust the first temperature threshold according to the first temperature difference when the first temperature difference is less than or equal to the first temperature difference threshold, and the greater the first temperature difference, the smaller the first temperature threshold; and / or

[0022] In the bypass mode, the over-temperature protection circuit is further configured to adjust the second temperature threshold according to the second temperature difference when the second temperature difference is less than or equal to the second temperature difference threshold, and the greater the second temperature difference, the smaller the second temperature threshold.

[0023] Optionally, the first temperature detection element and / or the second temperature detection element comprises one or more of the following: a diode, a thermistor, a resistance temperature sensor, and / or a thermocouple.

[0024] The first temperature detection element and / or the second temperature detection element comprises one or more of the following: a diode, a thermistor, a resistance temperature sensor, and / or a thermocouple.

[0025] The first temperature detection element and / or the second temperature detection element comprises one or more of the following: a diode, a thermistor, a resistance temperature sensor, and / or a thermocouple.

[0026] The first temperature detection element and / or the second temperature detection element comprises a resistance temperature sensor.

[0027] Optionally, the first temperature threshold is greater than the second temperature threshold, and the detection accuracy of the first temperature detection element is greater than the detection accuracy of the second temperature detection element.

[0028] Optionally, the control circuit comprises a logic control unit, a first driving unit, and a second driving unit.

[0029] The logic control unit is connected with the first driving unit, the second driving unit, and the over-temperature protection circuit, respectively, the first driving unit is further connected with the control end of the main power switch, and the second driving unit is further connected with the control end of the bypass switch.

[0030] In the normal working mode, the logic control unit drives the main power switch to be turned on via the first driving unit, and in the bypass mode, the logic control unit drives the bypass switch to be turned on via the second driving unit, and the power consumption of the first driving unit is greater than that of the second driving unit.

[0031] As an example, the second driving unit is a current-limiting driving unit.

[0032] When the intelligent electronic switch works in the normal working mode, the first driving unit drives the main power switch to work in the linear resistance region; when the intelligent electronic switch works in the bypass mode, the current-limiting driving unit drives the bypass switch to work in the linear resistance region or the saturation region.

[0033] In a second aspect, the embodiments of the present application provide an integrated circuit chip, comprising the intelligent electronic switch of the first aspect, wherein the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin.

[0034] In a third aspect, the embodiments of the present application provide a chip product, comprising the intelligent electronic switch of the first aspect, wherein the elements of the intelligent electronic switch except the main power switch and the first temperature detection element are located on a first integrated circuit chip, and the main power switch and the first temperature detection element are located on a second integrated circuit chip.

[0035] The power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin. The power supply pin and the power ground pin are located on the first integrated circuit chip, and the load output pin is located on the second integrated circuit chip.

[0036] In a fourth aspect, the embodiments of the present application provide a chip product, comprising the intelligent electronic switch of the first aspect, wherein the elements of the intelligent electronic switch except the main power switch, the first temperature detection element, the bypass switch and the second temperature detection element are located on a first integrated circuit chip, and the main power switch, the first temperature detection element, the bypass switch and the second temperature detection element are located on a second integrated circuit chip.

[0037] The power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin. The power supply pin and the power ground pin are located on the first integrated circuit chip, and the load output pin is located on the second integrated circuit chip.

[0038] In a fifth aspect, the embodiments of the present application provide an automobile, comprising the intelligent electronic switch of the first aspect, or the integrated circuit chip of the second aspect, or the chip product of the third aspect or the fourth aspect.

[0039] The automobile further comprises a battery, a load and a microcontroller. The positive electrode of the battery is connected with the power supply end, the negative electrode of the battery is connected with the power ground end, one end of the load is connected with the load output end, the other end of the load is connected with the power ground end or the power supply end, and the microcontroller is connected with the intelligent electronic switch.

[0040] The intelligent electronic switch, integrated circuit chip, chip product and automobile provided by the application, wherein the intelligent electronic switch comprises a control circuit, a main power switch, a first temperature detection element, an over-temperature protection circuit, and a bypass switch and a second temperature detection element, two ends of the bypass switch are connected with two ends of the main power switch in correspondence, a control end of the bypass switch and a control end of the main power switch are both connected with the control circuit, so that after the intelligent electronic switch enters a bypass mode, the control circuit drives the bypass switch to open and conduct, the over-temperature protection circuit obtains a temperature value of the bypass switch through the second temperature detection element, and outputs a second over-temperature signal when the temperature value of the bypass switch is higher than a second temperature threshold, so as to make the control circuit control the bypass switch to turn off and cut off. In the technical solution, different power switches are used in normal working mode and bypass mode, and different temperature detection elements are correspondingly arranged, so that the intelligent electronic switch does not interfere with each other when working in different working modes, and accurate protection is realized for the main power switch and the bypass switch, which not only avoids the problem that the main power switch or the bypass switch is damaged due to high temperature, but also the newly added bypass mode does not affect the functions of the original intelligent electronic switch, and the reliability of the intelligent electronic switch is improved. BRIEF DESCRIPTION OF DRAWINGS

[0041] The accompanying drawings, which are incorporated herein and form part of the specification, illustrate embodiments consistent with the present application and, together with the description, further serve to explain the principles of the application.

[0042] Figure 1 is a circuit module schematic diagram of an electronic device provided by the first embodiment of the application;

[0043] Figure 2 is a circuit module schematic diagram of an electronic device provided by the second embodiment of the application;

[0044] Figure 3 is a circuit module schematic diagram of an electronic device provided by the third embodiment of the application;

[0045] Figure 4 is a circuit structure schematic diagram of an electronic device provided by the fourth embodiment of the application;

[0046] Figure 5 is a circuit structure schematic diagram of an electronic device provided by the fifth embodiment of the application;

[0047] Figure 6 is another circuit structure schematic diagram of an electronic device provided by the fifth embodiment of the application;

[0048] Figure 7 is a circuit structure schematic diagram of an electronic device provided by the sixth embodiment of the application.

[0049] The specific embodiments of the present application have been shown and described in the above drawings and text, and will be described in more detail in the following. These drawings and text are not intended to limit the scope of the present application concept in any way, but to illustrate the present application concept to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0050] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions of the embodiments of the present application will be described clearly and completely below in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without any creative work fall within the scope of protection of the present application.

[0051] The terms "comprise" and "have" and any variations thereof that appear in the specification, claims and drawings of the present application are intended to cover not exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or modules is not limited to the listed steps or units, but can optionally include steps or units that are not listed, or can optionally include other steps or units inherent to the process, method, product or device.

[0052] In addition, the terms "first", "second" and "third" and the like are used to distinguish different objects, and are not used to describe a specific order. The electrical connection of the present application includes direct electrical connection and indirect electrical connection, and the indirect electrical connection means that there can be other electronic components, pins and the like between the two components of the electrical connection. The XX end mentioned in the present application can be an actually existing terminal, or can not be an actually existing terminal, for example, only one end of a component or one end of a wire. The "and / or" mentioned in the present application includes three cases, for example, A and / or B includes A, B, A and B.

[0053] In recent years, with the rapid growth of the automobile market, especially the explosion of the electric vehicle market, such as the electric passenger car market and the electric commercial vehicle market, the demand for automotive electronic components is increasing. The electronic components in demand in the car are relays, which are used to turn on or off a certain load circuit. However, the relay itself has some shortcomings, such as long on-off delay time, high cost and large size. Therefore, with the development of semiconductor technology, intelligent electronic switches have been successfully developed to replace traditional relays. Intelligent electronic switches are usually used to couple the load and the battery, and have one or more diagnostic capabilities and protection features, such as against over-temperature, overload and short-circuit events. For example, the intelligent electronic switch has a power switch, so that in the case of over-temperature, overload or short-circuit, the power switch will be turned off to disconnect the path between the battery and the load, thereby improving the reliability of the intelligent electronic switch.

[0054] It can be understood that in actual applications, the load types of intelligent electronic switches are diverse (such as inductance, capacitance, resistance or a combination of the three) and the working environment is harsh, so the application end has particularly high requirements for its reliability. Among them, the temperature protection of the intelligent electronic switch is an important item in the reliability requirement. When the power switch is in the on state and the temperature of the power switch is greater than the preset temperature threshold, the power switch can be controlled to be turned off to protect the power switch from being burned by high temperature.

[0055] At present, when the intelligent electronic switch has a load current output, it usually works in a normal working mode, and then controls the power switch to work in a linear resistance region based on the current demand of the load. At this time, the output current range of the intelligent electronic switch is wide, and the internal functional circuits are in normal working state. Among them, the functional circuit can be a diagnostic circuit for realizing a diagnostic function and / or a protection circuit for realizing a protection function, etc.

[0056] Because the self-consumption power of the intelligent electronic switch is large in the normal working mode, especially when there are many similar intelligent electronic switches in electronic devices such as cars, the overall power consumption of the electronic device is large, which accelerates the consumption of the battery equipped in the electronic device, and significantly shortens the endurance time of the battery.

[0057] In other scenarios, when the load connected to the smart electronic switch is light, the smart electronic switch doesn't need to output a high current; instead, it only needs to output a lower load current. For example, in the automotive electronics field, when a vehicle is in parking mode, some of the vehicle's loads are deactivated, significantly reducing the load current flowing through the smart electronic switch. This leads to the need for a bypass mode. In bypass mode, the maximum load current output by the smart electronic switch is lower than the maximum load current output in normal operating mode. In other words, when the vehicle is in parking mode, the smart electronic switch can be controlled to enter bypass mode to reduce its self-consumption. Specifically, when the smart electronic switch is outputting a load current, it can operate not only in normal operating mode but also in bypass mode. In bypass mode, the temperature protection circuit is deactivated, reducing the power consumption of the smart electronic switch in bypass mode. However, balancing self-consumption with reliability is crucial for the reliable operation of the smart electronic switch.

[0058] Based on the above technical concepts, an embodiment of the present application provides an intelligent electronic switch. In addition to including a control circuit, a main power switch, a first temperature detection element, and an over-temperature protection circuit, the embodiment of the present application also includes a bypass switch and a second temperature detection element. The two ends of the bypass switch are correspondingly connected to the two ends of the main power switch. The control end of the bypass switch and the control end of the main power switch are both connected to the control circuit. In this way, after the intelligent electronic switch enters the bypass mode, the control circuit drives the bypass switch to turn on and conduct. The over-temperature protection circuit obtains the temperature value of the bypass switch via the second temperature detection element and outputs a second over-temperature signal when the temperature value of the bypass switch exceeds a second temperature threshold, so that the control circuit controls the bypass switch to turn off. In this technical solution, different power switches are used in the normal operating mode and the bypass mode, and different temperature detection elements are set accordingly. This achieves precise protection for the main power switch and the bypass switch, avoiding the problem of damage to the main power switch or the bypass switch due to excessive temperature when the main power switch or the bypass switch continues to heat up.

[0059] The following specific embodiments describe in detail the technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0060] The present application embodiment provides an electronic device, which is, for example, a car. Figure 1 , Figure 1is a circuit module schematic diagram of an electronic device provided by the first embodiment of the present application. The electronic device comprises a battery 10, a load 30, a microcontroller 40 and an intelligent electronic switch 20. Among them, the battery 10 is generally a storage battery, which provides an external voltage of 12V, 24V, 48V, 60V or other sizes, of course, the battery 10 can also be other types of batteries, such as lithium batteries, sodium batteries, etc. The load 30 includes at least one of resistive load, inductive load and capacitive load, the resistive load is for example a seat adjustment device, an auxiliary heating device, a window heating device, a light emitting diode (LED), rear lighting or other resistive load, the inductive load is for example a pump, an actuator, a motor, an anti-lock braking system (ABS), an electronic braking system (EBS), a fan or other system including inductive load for one or more wiper systems, and the capacitive load is for example a lighting element such as a xenon arc lamp. The microcontroller 40 is connected with the intelligent electronic switch 20 for controlling the intelligent electronic switch 20.

[0061] For example, in actual application, the intelligent electronic switch 20 comprises a control circuit 21 and a switching circuit, so that the control circuit 21 can control the switching circuit to work in different states according to external signals, so as to make the intelligent electronic switch 20 work in different modes. For example, the intelligent electronic switch 20 can control the switching circuit to turn on when receiving an on control signal, and control the switching circuit to turn off when receiving an off control signal. Moreover, based on the switching state of the switching circuit and the working state of the internal functional circuit, the working mode of the intelligent electronic switch 20 can be divided into normal working mode, bypass mode, standby mode and sleep mode.

[0062] When the switch circuit is in the on-conducting state and the functional circuits in the intelligent electronic switch 20 are all working normally, at this time, the intelligent electronic switch 20 is said to work in a normal working mode or an active mode. In general, in the normal working mode, the intelligent electronic switch 20 can provide a larger load current according to the load demand. When the switch circuit is in the on-conducting state but the functional circuits integrated in the intelligent electronic switch 20 do not work or some modules in the functional circuits do not work, the intelligent electronic switch 20 is said to work in a bypass mode. Since the power consumption of the intelligent electronic switch 20 is relatively low in the bypass mode, the bypass mode can also be referred to as a low-power-consumption mode. In the bypass mode, the intelligent electronic switch 20 provides a load current smaller than that in the normal working mode. When the switch circuit is in the off-cutting state but the functional circuits in the intelligent electronic switch 20 are all in the normal working state, the intelligent electronic switch 20 is said to work in a standby mode. At this time, the intelligent electronic switch 20 has no load current output but is in a standby state. Once an on control signal is received, the intelligent electronic switch 20 can directly change to the normal working mode. When the switch circuit is in the off-cutting state and the functional circuits in the intelligent electronic switch 20 are all not working, the intelligent electronic switch is said to work in a sleep mode or a sleep mode. At this time, the power consumption of the intelligent electronic switch 20 is the lowest.

[0063] It can be understood that the embodiments of the present application are mainly explained and described in the application scenario in which the switch circuit is in the on-conducting state, and thus the intelligent electronic switch 20 works in the normal working mode or the bypass mode. The difference between the intelligent electronic switch 20 working in the bypass mode and the normal working mode can include: (1) the main power switch is controlled to be on-conducting in the normal working mode, and the bypass switch is controlled to be on-conducting in the bypass mode; (2) the self-consumption power of the intelligent electronic switch in the bypass mode is smaller than that in the normal working mode, which can be embodied in that the working states of the functional circuits in the intelligent electronic switch are different, so that the power consumption of the functional circuits in the bypass mode is smaller than that in the normal working mode.

[0064] The embodiment provides an intelligent electronic switch that can work in the bypass mode and the normal working mode. Referring to the above description Figure 1 As shown in the figure, the switch circuit includes a main power switch Q1 and a bypass switch Q2. Correspondingly, the intelligent electronic switch 20 can include a power supply end VBAT, a power ground end GND, a load output end OUT, a control circuit 21, the main power switch Q1, a first temperature detection element 261, and an over-temperature protection circuit 260.

[0065] The power supply end VBAT and the power ground end GND are used to be connected with the battery 10. Specifically, the power supply end VBAT is connected with the positive pole of the battery 10, and the power ground end GND is connected with the negative pole of the battery 10. The load output end OUT is used to be connected with the load 30.

[0066] In the embodiment of the present application, one end of the main power switch Q1 is connected with the power supply end VBAT or the power ground end GND, the other end of the main power switch Q1 is connected with the load output end OUT, and the control end of the main power switch Q1 is connected with the control circuit 21. The control circuit 21 is used to control the main power switch Q1 to be turned on or turned off. In a possible design, as shown in Figure 1 one end of the main power switch Q1 is connected with the load output end OUT, and the other end of the main power switch Q1 is connected with the power supply end VBAT. At this time, the main power switch Q1 is connected as a high-side switch, which is a switch connected between the power supply end VBAT and the load. In other possible designs of the present application, one end of the main power switch Q1 is connected with the load output end OUT, and the other end of the main power switch Q1 is connected with the power ground end GND. At this time, the main power switch Q1 is connected as a low-side switch, which is a switch connected between the power ground end GND and the load.

[0067] Optionally, in the embodiment, the first temperature detection element 261 is connected with the over-temperature protection circuit 260 and is arranged adjacent to or embedded in the main power switch Q1, and the over-temperature protection circuit 260 is further connected with the control circuit 21. Optionally, when the intelligent electronic switch works in the normal working mode, the main power switch Q1 is turned on, the over-temperature protection circuit 260 obtains the temperature value of the main power switch Q1 via the first temperature detection element 261, and outputs a first over-temperature signal when the temperature value of the main power switch Q1 is higher than a first temperature threshold, so as to trigger the control circuit 21 to control the main power switch Q1 to be turned off.

[0068] Continuing to refer to Figure 1 In the embodiment, the intelligent electronic switch further includes a bypass switch Q2 and a second temperature detection element 262. The first end and the second end of the bypass switch Q2 are connected with the first end and the second end of the main power switch Q1, respectively. The control end of the bypass switch Q2 is connected with the control circuit 21. The second temperature detection element 262 is connected with the over-temperature protection circuit 260 and is arranged adjacent to or embedded in the bypass switch Q2. After the intelligent electronic switch 20 enters the bypass mode, the control circuit 21 drives the bypass switch Q2 to be turned on. The over-temperature protection circuit 260 obtains the temperature value of the bypass switch Q2 via the second temperature detection element 262, and outputs a second over-temperature signal when the temperature value of the bypass switch Q2 is higher than a second temperature threshold, so as to make the control circuit 21 control the bypass switch Q2 to be turned off.

[0069] In the embodiment of the present application, on the basis of the existing intelligent electronic switch, by additionally adding the bypass switch Q2, when the intelligent electronic switch 20 is in the normal working mode, the main power switch Q1 can be controlled to be turned on and the bypass switch Q2 is controlled to be turned off, and when the intelligent electronic switch 20 is in the bypass mode, the bypass switch Q2 can be controlled to be turned on and the main power switch Q1 is controlled to be turned off, so that the intelligent electronic switch works in different working modes without interfering with each other, that is, the newly added bypass mode does not affect the original intelligent electronic switch, and the reliability of the intelligent electronic switch is improved.

[0070] Optionally, when the bypass switch Q2 is controlled to be turned on by the control circuit 21 in the bypass mode, it can also be explained that when the entering instruction of the bypass mode or the condition of entering the bypass mode is received, the control circuit 21 controls the intelligent electronic switch 20 to work in the bypass mode by controlling the bypass switch Q2 to be turned on and the main power switch Q1 to be turned off, and the present application does not limit the causal relationship between the entering time of the bypass mode and the turning on of the bypass switch Q2, and the two can be understood as a corresponding relationship.

[0071] In actual application, the intelligent electronic switch 20 can also include an input end Input, which can be connected with the microcontroller 40 through the input end Input, so that the intelligent electronic switch 20 can control the switching state of the main power switch Q1 or the bypass switch Q2 based on the switching control signal (Input signal) received from the microcontroller 40 and the working mode of the intelligent electronic switch 20. For example, when the received switching control signal is an on control signal and the intelligent electronic switch 20 works in the normal working mode, the control circuit 21 controls the main power switch Q1 to be turned on, and when the received switching control signal is an off control signal and the intelligent electronic switch 20 works in the bypass mode, the control circuit 21 controls the bypass switch Q2 to be turned off.

[0072] In the embodiment, in order to ensure the working reliability of the intelligent electronic switch 20, the intelligent electronic switch 20 is internally provided with an over-temperature protection circuit 260 and a first temperature detection element 261 and a second temperature detection element 262 connected with the over-temperature protection circuit 260. Among them, the over-temperature protection circuit 260 is connected with the control circuit 21, the first temperature detection element 261 is arranged adjacent to or embedded in the main power switch Q1, and is used for detecting the temperature value of the main power switch Q1, and the second temperature detection element 262 is arranged adjacent to or embedded in the bypass switch Q2, and is used for detecting the temperature value of the bypass switch Q2.

[0073] In the normal working mode, the control circuit 21 controls the main power switch Q1 to be turned on, which causes the main power switch Q1 to generate heat, and then the first temperature detection element 261 senses the temperature value change of the main power switch Q1. Therefore, the over-temperature protection circuit 260 obtains the temperature value of the main power switch Q1 through the first temperature detection element 261, and outputs a first over-temperature signal to the control circuit 21 when it judges that the temperature value of the main power switch Q1 is higher than the first temperature threshold, so as to trigger the control circuit 21 to control the main power switch Q1 to be turned off, thereby protecting the main power switch Q1 from high-temperature damage.

[0074] Correspondingly, in the bypass mode, the control circuit 21 controls the bypass switch Q2 to be turned on, which causes the bypass switch Q2 to generate heat, and then the second temperature detection element 262 senses the temperature value change of the bypass switch Q2. Therefore, the over-temperature protection circuit 260 obtains the temperature value of the bypass switch Q2 through the second temperature detection element 262, and outputs a second over-temperature signal to the control circuit 21 when it judges that the temperature value of the bypass switch Q2 is higher than the second temperature threshold, so as to trigger the control circuit 21 to control the bypass switch Q2 to be turned off, thereby protecting the bypass switch Q2 from high-temperature damage.

[0075] In the embodiment, by configuring the first temperature detection element 261 for the main power switch Q1 and the second temperature detection element 262 for the bypass switch Q2, the temperature values (the temperature value of the main power switch Q1 and the temperature value of the bypass switch Q2) obtained by the over-temperature protection circuit 260 are more accurate, thereby realizing accurate control of the main power switch Q1 and the bypass switch Q2.

[0076] In a possible design of the embodiment, the main power switch Q1 and the bypass switch Q2 can be N-type metal-oxide-semiconductor field-effect transistors (NMOS FETs, NMOS tubes), PMOS tubes, junction field effect transistors (JFETs), or insulated gate bipolar transistors (IGBTs). e -Semiconductor Field-Effect Transistor, NMOS FET, NMOS tube), a PMOS tube, a junction field effect transistor (JFET), or an insulated gate bipolar transistor (IGBT). In another possible design of the embodiment, the main power switch Q1 and the bypass switch Q2 can also be implemented as silicon devices, or can be implemented using other semiconductor materials, such as silicon carbide (SiC), gallium arsenide (GaAs), or gallium nitride (GaN), and the embodiment of the present application does not limit the specific implementation form of the main power switch Q1 and the bypass switch Q2, which can be selected according to actual needs. Exemplarily, Figure 1The main power switch Q1 is an NMOS tube, and the bypass switch Q2 is a PMOS tube.

[0077] Optionally, in actual application, a fuse (not shown) can be connected in series between the battery 10 and the power supply terminal VBAT to prevent faults caused by excessive current on the circuit. Other elements, such as an anti-reverse connection diode and a current-limiting resistor connected in parallel, can be arranged between the power supply ground terminal GND and the negative electrode of the battery 10 to improve the stability of the intelligent electronic switch 20.

[0078] Optionally, in actual application, a fuse (not shown) can be connected in series between the battery 10 and the power supply terminal VBAT to prevent faults caused by excessive current on the circuit. Other elements, such as an anti-reverse connection diode and a current-limiting resistor connected in parallel, can be arranged between the power supply ground terminal GND and the negative electrode of the battery 10 to improve the stability of the intelligent electronic switch 20. Figure 1 In the schematic diagram shown, the connection relationship between the control circuit 21, the over-temperature protection circuit 260, and the power supply unit is not shown, but in actual application, the intelligent electronic switch 20 can be internally provided with a power supply unit. The internal power supply unit is connected to the power supply terminal VBAT to step down the voltage of the power supply terminal VBAT, for example, the power supply unit is used to reduce the voltage of the power supply terminal VBAT from 12V to 5V, and the voltage output by the power supply unit is used to provide power to the control circuit 21, the over-temperature protection circuit 260, and other circuits. Optionally, one implementation of the power supply unit is a low-dropout regulator (LDO). In other embodiments, the intelligent electronic switch 20 can also not be internally provided with a power supply unit, at which time the positive electrode of the battery 10 is also connected to a step-down unit, and the step-down unit outputs a stepped-down voltage to the intelligent electronic switch 20, for example, the voltage range of the voltage output by the step-down unit to the power supply terminal VBAT is 3.3V-5V, which can directly power the control circuit 21, the over-temperature protection circuit 260, and other circuits inside the intelligent electronic switch 20.

[0079] In the embodiments of the present application, the intelligent electronic switch comprises a control circuit, a main power switch, a first temperature detection element, an over-temperature protection circuit, and a bypass switch and a second temperature detection element, two ends of the bypass switch are connected to the two ends of the main power switch in correspondence, and the control end of the bypass switch and the control end of the main power switch are both connected to the control circuit, so that after the intelligent electronic switch enters the bypass mode, the control circuit drives the bypass switch to open and conduct, the over-temperature protection circuit obtains the temperature value of the bypass switch through the second temperature detection element, and outputs a second over-temperature signal when the temperature value of the bypass switch is higher than the second temperature threshold, so as to make the control circuit control the bypass switch to turn off and cut off. In the technical solution, different power switches are used in the normal working mode and the bypass mode, and different temperature detection elements are correspondingly arranged, so that the intelligent electronic switch working in different working modes do not interfere with each other, and the main power switch and the bypass switch can be accurately protected respectively, not only avoiding the problem that the main power switch or the bypass switch is damaged due to high temperature when the main power switch and the bypass switch continuously heat, but also the newly added bypass mode does not affect the original intelligent electronic switch, improving the reliability of the intelligent electronic switch working.

[0080] Optionally, the above embodiments introduce the intelligent electronic switch 20 in a general way, and the following different embodiments respectively explain the temperature detection principle of the intelligent electronic switch 20. It can be understood that the following embodiments are based on the above-mentioned Figure 1 The embodiments are explained, and the implementation principle of the main power switch Q1 and the bypass switch Q2 connected as low-side switches is similar, which will not be described herein.

[0081] Figure 2 is a circuit module schematic diagram of an electronic device provided by the second embodiment of the present application. As Figure 2 In the present embodiment, the intelligent electronic switch further comprises a first element 263, the first element 263 is connected with the first temperature detection element 261 through a first switch unit K1 to form a first detection branch, and the first element 263 is connected with the second temperature detection element 262 through a second switch unit K2 to form a second detection branch, and the over-temperature protection circuit 260 is connected with a first temperature detection point TP1 on the first detection branch and a second temperature detection point TP2 on the second detection branch.

[0082] Optionally, in the normal working mode, the control circuit 21 controls the first switch unit K1 to conduct to turn on the first detection branch, at this time, the voltage of the first temperature detection point TP1 is used to represent the temperature value of the main power switch Q1, and the over-temperature protection circuit 260 is used to compare the voltage of the first temperature detection point TP1 with the first voltage threshold to determine whether to output the first over-temperature signal, and the first voltage threshold corresponds to the first temperature threshold.

[0083] In the bypass mode, the control circuit 21 controls the second switch unit K2 to turn on, thereby turning on the second detection branch. At this time, the voltage at the second temperature detection point TP2 is used to represent the temperature value of the bypass switch Q2. The over-temperature protection circuit 260 is used to compare the voltage at the second temperature detection point TP2 with a second voltage threshold to determine whether to output a second over-temperature signal. The second voltage threshold corresponds to the second temperature threshold.

[0084] For example, in an embodiment of the present application, if the over-temperature protection circuit 260 obtains the temperature change reflected by the first temperature detection element 261, the two ends of the first detection branch are also connected to the power supply unit 264 and the power ground terminal GND to form a path. Figure 2 As shown, one end of the first temperature detection element 261 is connected to the power ground terminal GND, and the other end of the first element 263 can be connected to the power supply terminal VBAT via the power supply unit 264. However, the present application is not limited thereto. In other embodiments of the present application, one end of the first temperature detection element 261 is connected to the power supply terminal VBAT via the power supply unit 264, and the other end of the first element 263 is connected to the power ground terminal GND.

[0085] In an embodiment of the present application, when the intelligent electronic switch 20 is in normal operating mode, the main power switch Q1 is turned on and the first switch unit K1 is controlled to be turned on, so that the first detection branch is open. At this time, the temperature value of the first temperature detection element 261 can reflect the temperature value of the main power switch Q1. For example, when the first temperature detection element 261 is a temperature detection element with a negative temperature coefficient, if the temperature of the main power switch Q1 is higher, the temperature of the first temperature detection element 261 is also higher, the resistance of the first temperature detection element 261 is lower, the current in the first detection branch is greater, the voltage division of the first element 263 is greater, and the voltage at the first temperature detection point TP1 is lower. If the temperature of the main power switch Q1 is lower, the temperature of the first temperature detection element 261 is also lower, but the resistance of the first temperature detection element 261 is higher, the current in the first detection branch is smaller, the voltage division of the first element 263 is smaller, and the voltage at the first temperature detection point TP1 is higher. However, the present application is not limited to this. In other embodiments of the present application, the first temperature detection element 261 can also be a temperature detection element with a positive temperature coefficient. In this case, the higher the temperature of the main power switch Q1, the higher the temperature on the first temperature detection element 261, and the higher the voltage at the first temperature detection point TP1; if the temperature of the first temperature detection element 261 is lower, the temperature on the first temperature detection element 261 is also lower, and the voltage at the first temperature detection point TP1 is lower.

[0086] In an embodiment of the present application, the over-temperature protection circuit 260 can compare the voltage obtained at the first temperature detection point TP1 with the first voltage threshold, and output a first over-temperature signal to the control circuit 21 when the temperature of the main power switch Q1 is abnormal, that is, the temperature of the main power switch Q1 is greater than the first temperature threshold (if the first temperature detection element 261 is a temperature detection element with a negative temperature coefficient, the voltage at the first temperature detection point TP1 is less than the first voltage threshold), so as to trigger the control circuit 21 to drive the main power switch Q1 to be turned off, thereby achieving temperature protection for the main power switch Q1.

[0087] Similarly, if the over-temperature protection circuit 260 obtains the temperature change reflected by the second temperature detection element 262, the two ends of the second detection branch are also connected to the power supply unit 264 and the power ground terminal GND to form a path. Figure 2 As shown, one end of the first temperature detection element 261 is connected to the power ground terminal GND, and the other end of the first element 263 can be connected to the power supply terminal VBAT via the power supply unit 264. However, the present application is not limited thereto. In other embodiments of the present application, one end of the first temperature detection element 261 is connected to the power supply terminal VBAT via the power supply unit 264, and the other end of the first element 263 is connected to the power ground terminal GND.

[0088] When the intelligent electronic switch is in bypass mode, the bypass switch Q2 is turned on and the second switch unit K2 is controlled to be turned on, so that the second detection branch is open. At this time, the temperature value of the second temperature detection element 262 can reflect the temperature value of the bypass switch Q2. As an example, when the second temperature detection element 262 is a temperature detection element with a negative temperature coefficient, if the temperature of the bypass switch Q2 is higher, the temperature on the second temperature detection element 262 is also higher, the resistance of the second temperature detection element 262 is lower, the current in the second detection branch is greater, the voltage division of the first element 263 is greater, and the voltage at the second temperature detection point TP2 is lower. If the temperature of the bypass switch Q2 is lower, the temperature on the second temperature detection element 262 is also lower, but the resistance of the second temperature detection element 262 is higher, the current in the second detection branch is smaller, the voltage division of the first element 263 is smaller, and the voltage at the second temperature detection point TP2 is higher. However, the present application is not limited to this. As another example, the second temperature detection element 262 can also be a temperature detection element with a positive temperature coefficient. In this case, the higher the temperature of the bypass switch Q2, the higher the temperature on the second temperature detection element 262, and the higher the voltage at the second temperature detection point TP2; if the temperature of the second temperature detection element 262 is lower, the temperature on the second temperature detection element 262 is lower, and the voltage at the second temperature detection point TP2 is lower.

[0089] Correspondingly, in the embodiment of the present application, the over-temperature protection circuit 260 can be implemented by an operational amplifier unit, which can compare the voltage at the second temperature detection point TP2 obtained with the second voltage threshold value, and output a second over-temperature signal to the control circuit 21 when the temperature of the bypass switch Q2 is abnormal, i.e., the temperature of the bypass switch Q2 is greater than the second temperature threshold value (if the second temperature detection element 262 is a negative temperature coefficient temperature detection element, the voltage at the second temperature detection point TP2 is less than the second voltage threshold value), so as to trigger the control circuit 21 to drive the bypass switch Q2 to be off, thereby realizing temperature protection for the bypass switch Q2.

[0090] Optionally, the first temperature detection element 261 and / or the second temperature detection element 262 comprises one or more series-connected diodes; or, the first temperature detection element 261 and / or the second temperature detection element 262 comprises one or more series-connected thermistors, the first temperature detection element 261 and / or the second temperature detection element 262 is a negative temperature coefficient temperature detection unit or a positive temperature coefficient temperature detection unit; or, the first temperature detection element 261 and / or the second temperature detection element 262 comprises a resistance temperature sensor (RTD), and the detection accuracy of the RTD is relatively high.

[0091] For example, in the embodiment, the first temperature detection element 261 and the second temperature detection element 262 can adopt the same type of temperature detection element, for example, the first temperature detection element 261 and the second temperature detection element 262 are one or more series-connected diodes, as shown in Figure 2 In other embodiments, the first temperature detection element 261 and the second temperature detection element 262 are one or more series-connected thermistors, etc. It can be understood that in other embodiments of the present application, the first temperature detection element 261 and the second temperature detection element 262 can adopt different types of temperature detection elements, which can be determined according to actual needs, and the present embodiment does not limit them.

[0092] In addition, in the embodiment, the first element 263 can be a current source or a voltage dividing resistor, etc. For example, Figure 2 In the embodiment, the first element 263 is taken as a current source for example.

[0093] Optionally, in the embodiment of the present application, the first temperature threshold value is greater than the second temperature threshold value, and the detection accuracy of the first temperature detection element 261 is greater than the detection accuracy of the second temperature detection element 262.

[0094] For example, the first temperature threshold value can be set according to the temperature resistance of the main power switch Q1, and the second temperature threshold value can be set according to the temperature resistance of the bypass switch Q2. For example, the first temperature threshold value can be in the range of 130-200℃, and the second temperature threshold value can be in the range of 100-170℃. Alternatively, the first temperature threshold value is 175℃, and the second temperature threshold value is 150℃.

[0095] Generally, the current flowing through the main power switch Q1 in the normal working mode is greater than the current flowing through the bypass switch Q2 in the bypass mode. Therefore, when the load is short-circuited, the heating speed of the main power switch Q1 is greater than that of the bypass switch Q2, and the heat generated by the main power switch Q1 is greater than that of the bypass switch Q2. Therefore, in order to improve the detection sensitivity of the intelligent electronic switch to the main power switch Q1, the detection accuracy of the first temperature detection element 261 is greater than that of the second temperature detection element 262. Correspondingly, the power consumption of the first temperature detection element 261 or the over-temperature protection circuit 260 in the normal working mode is greater than that in the bypass mode.

[0096] Alternatively, in the embodiment of the present application, the first switch unit is connected in series on the first detection branch, and the second switch unit is connected in series on the second detection branch, so that the first detection branch and the second detection branch share the power supply unit and the first element. In this way, the number of devices included in the intelligent electronic switch can be reduced, the device occupation area can be reduced, and the design cost can be reduced.

[0097] It can be understood that in actual application, the power supply unit and the voltage dividing element can be respectively arranged on the first detection branch and the second detection branch. For example, the first detection branch includes a first power supply unit, a first element, and a first temperature detection element, and the second detection branch includes a second power supply unit, a second element, and a second temperature detection element. In this way, when the first detection branch and the second detection branch are both working, they do not interfere with each other, and the accuracy of branch detection is improved.

[0098] For example, Figure 3 is a circuit module schematic diagram of an electronic device provided by the third embodiment of the present application. The present embodiment is explained and described based on the embodiment of Figure 1 . As shown in Figure 3 , in the intelligent electronic switch provided by the present embodiment, the intelligent electronic switch 20 further includes a third temperature detection element 265. The third temperature detection element 265 is arranged at a third position in the intelligent electronic switch, which is away from the first position where the first temperature detection element 261 is located and away from the second position where the second temperature detection element 262 is located. The third temperature detection element 265 is connected with the over-temperature protection circuit 260.

[0099] In the embodiment, the over-temperature protection circuit 260 is further configured to obtain a first ambient temperature value of the main power switch Q1 via the third temperature detection element 265 in the normal working mode, and output a first over-temperature signal when a first temperature difference between the temperature value of the main power switch Q1 and the first ambient temperature value is greater than a first temperature difference threshold, so as to control the control circuit 21 to control the main power switch Q1 to be turned off. In addition, the over-temperature protection circuit 260 is further configured to obtain a second ambient temperature value of the bypass switch Q2 via the third temperature detection element 265 in the bypass mode, and output a second over-temperature signal when a second temperature difference between the temperature value of the bypass switch Q2 and the second ambient temperature value is greater than a second temperature difference threshold, so as to control the control circuit 21 to control the bypass switch Q2 to be turned off.

[0100] In actual application, based on the characteristics of temperature dissipation, when the main power switch Q1 is turned on, the temperature of the whole intelligent electronic switch will actually increase in addition to the temperature of the first position where the first temperature detection element 261 is located. For example, when the third temperature detection element 265 is arranged at a third position in the intelligent electronic switch, and the third position is far away from the first position, the temperature at the third position can reflect the overall temperature of the intelligent electronic switch, i.e., the first ambient temperature of the main power switch Q1. It can be understood that the temperature at the third position is different when the distance between the third position and the first position in the intelligent electronic switch is different. In the embodiment, after obtaining the temperature at the third position, i.e., the first ambient temperature of the main power switch Q1, the over-temperature protection circuit 260 can further calculate a first temperature difference between the temperature value of the main power switch Q1 and the first ambient temperature, and compare the first temperature difference with a preset first temperature difference threshold. If the first temperature difference is greater than the first temperature difference threshold, it is considered that the temperature value of the main power switch Q1 is too high. At this time, the over-temperature protection circuit 260 can also output the first over-temperature signal to prompt the control circuit 21 to drive the main power switch Q1 to be turned off. This scheme can avoid the problem that the over-temperature protection circuit 260 cannot timely protect the main power switch Q1 due to the failure of the first temperature detection element 261 or the abnormality of the first detection branch, and improves the temperature protection control precision of the main power switch Q1.

[0101] Optionally, in the embodiment of the application, when the third position where the third temperature detection element 265 is located is also far away from the second position where the second temperature detection element 262 is located, by analogy, when the bypass switch Q2 is turned on, the temperature of the whole intelligent electronic switch will also be increased, correspondingly, the temperature at the third position can also reflect the first ambient temperature of the bypass switch Q2, and in the intelligent electronic switch, the distance between the third position and the second position is different, so the temperature at the third position is different. In the embodiment, after the over-temperature protection circuit 260 obtains the temperature at the third position, i.e., the second ambient temperature of the bypass switch Q2, it can also calculate a second temperature difference value of the temperature value of the bypass switch Q2 and the second ambient temperature, and compare the second temperature difference value with a preset second temperature difference threshold value, if the second temperature difference value is greater than the second temperature difference threshold value, it is considered that the temperature value of the bypass switch Q2 is already too high, at this time, the over-temperature protection circuit 260 can also output a second over-temperature signal to prompt the control circuit 21 to drive the bypass switch Q2 to turn off and cut off. This scheme can avoid the problem that the over-temperature protection circuit 260 cannot timely protect the bypass switch Q2 due to the failure of the second temperature detection element 262 or the abnormality of the second detection branch, and improves the temperature protection control precision of the bypass switch Q2.

[0102] It can be understood that, in the embodiment of the application, referring to the content described in Figure 2 , if the over-temperature protection circuit 260 wants to obtain the temperature at the third temperature detection element 265, the intelligent electronic switch can also include a third element (not shown), so that the third element, the third temperature detection element 265 and the power supply unit 264 form a third detection branch, and on the third detection branch, the connection point of the third element and the temperature detection element is a third temperature detection point TP3, in addition, the two ends of the third detection branch are connected with the power supply end VBAT and the power ground end GND, so that the temperature change of the third temperature detection point TP3 can reflect the temperature change at the third position where the third temperature detection element 265 is located. The working principle of the third detection branch can refer to the principle of the first detection branch and the second detection branch described in Figure 2 , and the embodiment will not be described here.

[0103] Optionally, in the Figure 3On the basis of the illustrated embodiment, the over-temperature protection circuit 260 is further configured to output a first over-temperature release signal to control the control circuit 21 to control the main power switch Q1 to be turned on again when the first temperature difference is less than a third temperature difference threshold and the temperature value of the main power switch Q1 is less than a third temperature threshold, and output a second over-temperature release signal to control the control circuit 21 to control the bypass switch Q2 to be turned on again when the second temperature difference is less than a second temperature difference threshold and the temperature value of the bypass switch Q2 is less than a fourth temperature threshold; wherein the third temperature difference threshold is less than the first temperature difference threshold, the fourth temperature difference threshold is less than the second temperature difference threshold, the third temperature threshold is less than the first temperature threshold, and the fourth temperature threshold is less than the second temperature threshold.

[0104] For example, to avoid the problem that the intelligent electronic switch cannot be used due to the instantaneous temperature being too high, the intelligent electronic switch can further automatically turn on the main power switch Q1 again when the temperature of the main power switch Q1 decreases to the third temperature threshold and the first temperature difference is less than the third temperature difference threshold in the normal working mode. That is, the over-temperature protection circuit 260 can further detect the relationship between the temperature of the main power switch Q1 and the third temperature threshold and the relationship between the first temperature difference and the third temperature difference threshold in real time after outputting the first over-temperature signal, and output the first over-temperature release signal when it is determined that the temperature of the main power switch Q1 decreases to the third temperature threshold and the first temperature difference is less than the third temperature difference threshold, so as to trigger the control circuit 21 to drive the main power switch Q1 to be turned on again. It can be understood that the first over-temperature threshold is a threshold for triggering over-temperature protection of the main power switch Q1, and the third temperature threshold is a threshold for triggering over-temperature protection of the main power switch Q1 to be released, and thus, to protect the main power switch Q1 from being damaged by high temperature, the third temperature threshold is less than the first temperature threshold, and similarly, the third temperature difference threshold is less than the first temperature difference threshold.

[0105] Similarly, in the bypass mode, the intelligent electronic switch 20 can further automatically turn on the bypass switch Q2 again when the temperature of the bypass switch Q2 decreases to the fourth temperature threshold and the second temperature difference is less than the fourth temperature difference threshold. That is, the over-temperature protection circuit 260 can further detect the relationship between the temperature of the bypass switch Q2 and the fourth temperature threshold and the relationship between the second temperature difference and the fourth temperature difference threshold in real time after outputting the second over-temperature signal, and output the second over-temperature release signal when it is determined that the temperature of the bypass switch Q2 decreases to the fourth temperature threshold and the second temperature difference is less than the fourth temperature difference threshold, so as to trigger the control circuit 21 to drive the bypass switch Q2 to be turned on again. It can be understood that the second over-temperature threshold is a threshold for triggering over-temperature protection of the bypass switch Q2, and the fourth temperature threshold is a threshold for triggering over-temperature protection of the bypass switch Q2 to be released, and thus, to protect the bypass switch Q2 from being damaged by high temperature, the fourth temperature threshold is less than the second temperature threshold, and similarly, the fourth temperature difference threshold is less than the second temperature difference threshold.

[0106] In the embodiment of the present application, the over-temperature protection circuit can output a first over-temperature release signal when the temperature of the main power switch decreases below the safety threshold, so as to trigger the control circuit to drive the main power switch to reopen the conduction, and can also output a second over-temperature release signal when the temperature of the bypass switch decreases below the safety threshold, so as to trigger the control circuit to drive the bypass switch to reopen the conduction. That is, the intelligent electronic switch can provide current for the load again after the over-temperature problem is solved, thereby improving the intelligent degree of the intelligent electronic switch.

[0107] For example, in the intelligent electronic switch, the bypass switch Q2 is arranged away from the main power switch Q1, and the above-mentioned Figure 1 Or Figure 2 As shown, at the normal working mode, the over-temperature protection circuit 260 is further configured to acquire a first ambient temperature value of the main power switch Q1 via the second temperature detection element 262 and output a first over-temperature signal when a first temperature difference between the temperature value of the main power switch Q1 and the first ambient temperature value is greater than a first temperature difference threshold, so as to make the control circuit 21 control the main power switch Q1 to be turned off.

[0108] At the bypass mode, the over-temperature protection circuit 260 is further configured to acquire a second ambient temperature value of the bypass switch Q2 via the first temperature detection element 261 and output a second over-temperature signal when a second temperature difference between the temperature value of the bypass switch Q2 and the second ambient temperature value is greater than a second temperature difference threshold, so as to make the control circuit 21 control the bypass switch Q2 to be turned off.

[0109] It can be understood that, inside the intelligent electronic switch, when the bypass switch Q2 is arranged away from the main power switch Q1, since the second temperature detection element 262 is arranged adjacent to or embedded in the bypass switch Q2, and the first temperature detection element 261 is arranged adjacent to or embedded in the main power switch Q1, the second position where the second temperature detection element 262 is located is away from the first position where the first temperature detection element 261 is located. Thus, when the main power switch Q1 is turned on and the bypass switch Q2 is turned off, the temperature at the second temperature detection element 262 can reflect the overall temperature of the intelligent electronic switch, that is, the temperature acquired by the over-temperature protection circuit 260 via the second temperature detection element 262 can be regarded as the ambient temperature of the main power switch Q1, that is, the first ambient temperature. Therefore, in this embodiment, the over-temperature protection circuit 260 can also output the first over-temperature signal when it is determined that the first temperature difference between the temperature value of the main power switch Q1 and the first ambient temperature value is greater than the first temperature difference threshold, thereby prompting the control circuit 21 to control the main power switch Q1 to be turned off.

[0110] Similarly, when the main power switch Q1 is turned off and the bypass switch Q2 is turned on, the temperature at the first temperature detection element 261 can also reflect the overall temperature of the intelligent electronic switch 20, i.e., the temperature obtained by the over-temperature protection circuit 260 through the first temperature detection element 261 can be taken as the ambient temperature of the bypass switch Q2, i.e., the second ambient temperature. Thus, in this embodiment, the over-temperature protection circuit 260 can also output a second over-temperature signal when the second temperature difference value between the temperature value of the bypass switch Q2 and the second ambient temperature value is greater than the second temperature difference threshold, thereby prompting the control circuit 21 to control the bypass switch Q2 to be turned off.

[0111] In this embodiment, by arranging the main power switch Q1 and the first temperature detection element 261 and the bypass switch Q2 and the second temperature detection element 262 in the intelligent electronic switch 20, the over-temperature protection circuit 260 can obtain the ambient temperature of the main power switch Q1 through the second temperature detection element 262 in the normal working mode, and similarly, the over-temperature protection circuit 260 can obtain the ambient temperature of the bypass switch Q2 through the first temperature detection element 261 in the bypass mode, so that no other temperature detection element, such as the third temperature detection element 265 shown in the prior art, is needed when dynamically protecting the intelligent electronic switch 20, thereby saving components and reducing area occupation while achieving the same beneficial effects. Figure 3

[0112] It can be understood that, in this embodiment, the over-temperature protection circuit 260 is further configured to output a first over-temperature release signal when the first temperature difference value is less than the third temperature difference threshold and the temperature value of the main power switch Q1 is less than the third temperature threshold, so as to control the control circuit 21 to control the main power switch Q1 to be turned on again, and output a second over-temperature release signal when the second temperature difference value is greater than the second temperature difference threshold and the temperature value of the bypass switch Q2 is less than the fourth temperature threshold, so as to control the control circuit 21 to control the bypass switch Q2 to be turned on again.

[0113] In the embodiments of the present application, the over-temperature protection circuit can also output a first over-temperature release signal when the temperature of the main power switch decreases below the safety threshold, thereby triggering the control circuit to drive the main power switch to be turned on again, and output a second over-temperature release signal when the temperature of the bypass switch decreases below the safety threshold, thereby triggering the control circuit to drive the bypass switch to be turned on again. That is, the intelligent electronic switch can provide current to the load again after the over-temperature problem is resolved, thereby also improving the intelligent degree of the intelligent electronic switch.

[0114] ​Optionally, in the intelligent electronic switch provided in the embodiment, in the normal working mode, the over-temperature protection circuit 260 is further configured to adjust the first temperature threshold according to the first temperature difference when the first temperature difference is less than or equal to the first temperature difference threshold, and the greater the first temperature difference, the smaller the first temperature threshold; and / or, in the bypass mode, the over-temperature protection circuit 260 is further configured to adjust the second temperature threshold according to the second temperature difference when the second temperature difference is less than or equal to the second temperature difference threshold, and the greater the second temperature difference, the smaller the second temperature threshold.

[0115] The embodiment is explained on the basis of any of the above-mentioned embodiments, wherein the positional relationship of the main power switch Q1 and the bypass switch Q2 can be as shown in Figures 1 to 3 , and correspondingly, the positional relationship of the first temperature detection element 261 and the second temperature detection element 262 can also be as shown in Figure 1 and Figure 2 , or the positional relationship of the first temperature detection element 261, the second temperature detection element 262 and the third temperature detection element 265 can be as shown in Figure 3 .

[0116] For example, the following is explained on the basis of the embodiments shown in Figure 2 and Figure 3 , assuming that in the normal working mode, the over-temperature protection circuit 260 is configured to adjust the first temperature threshold according to the first temperature difference. Optionally, Figure 4 is a circuit structure schematic diagram of an electronic device provided in the fourth embodiment of the present application. As shown in Figure 4 , the intelligent electronic switch 20 comprises a first element 2611, a second element 2621 and a third element 2651, the first end of the first element 2611, the second element 2621 and the third element 2651 is connected with the power supply unit 264, and the second end thereof is connected with the power supply ground end GND, the connection point of the first element 2611 and the first temperature detection element 261 is the first temperature detection point TP1, the connection point of the second element 2621 and the second temperature detection element 262 is the second temperature detection point TP2, and the connection point of the third element 2651 and the third temperature detection element 265 is the third temperature detection point TP3, the third temperature detection element 265 is configured to detect the temperature change in the intelligent electronic switch 20 and reflect the temperature change through the voltage at the third temperature detection point TP3.

[0117] Referring to Figure 4As shown, in this embodiment, the over-temperature protection circuit 260 may include an operation unit 2601, a first comparison unit CP1, a third comparison unit CP3, a threshold generation unit 2602 and a logic unit 2603, wherein the first input terminal of the operation unit 2601 is connected to the first temperature detection point TP1, the second input terminal thereof is connected to the third temperature detection point TP3, the output terminal thereof is connected to the first input terminal of the third comparison unit CP3, and the second input terminal of the third comparison unit CP3 is used to access the voltage V corresponding to the first temperature difference threshold TD1 , its output end is connected to the first input end of the logic operation unit 2601 and the threshold generation unit 2602, the first input end of the first comparison unit CP1 is connected to the first temperature detection point TP1, the second input end thereof is connected to the threshold generation unit 2602, and the output end thereof is connected to the second input end of the logic operation unit 2601, the output end of the logic operation unit 2601 is connected to the control circuit 21, and the threshold generation unit 2602 is used to generate a voltage V corresponding to the first temperature threshold T1 , and adjusting the voltage V corresponding to the first temperature threshold according to the output result of the third comparison unit CP3 T1 And output to the second input terminal of the first comparison unit CP1.

[0118] In this embodiment, in the normal working mode, the first comparison unit CP1 is used to compare the voltage V at the first temperature detection point TP1. TP1 The voltage V corresponding to the first temperature threshold T1 When the temperature of the main power switch Q1 is greater than the first temperature threshold, the first comparison unit CP1 outputs a first over-temperature protection signal to the logic unit 2603. The operation unit 2601 is used to convert the voltage V at the first temperature detection point TP1 TP1 and the voltage V at the third temperature detection point TP3 TP3 Perform calculation to generate a voltage V corresponding to the first temperature difference TPD1 TPD1 The third comparison unit CP3 compares the voltage V corresponding to the first temperature difference TPD1 TPD1 The voltage V corresponding to the first temperature difference threshold TD1 TD1 Make a comparison.

[0119] On the one hand, when the first temperature difference TPD1 is greater than the first temperature difference threshold TD1, the third comparison unit CP3 outputs a first over-temperature protection signal to the logic unit 2603. When either the first comparison unit CP1 or the third comparison unit CP3 outputs the first over-temperature protection signal, the logic unit 2603 outputs the first over-temperature protection signal to the control circuit 21, thereby triggering the control circuit 21 to perform temperature protection on the main power switch Q1.

[0120] On the other hand, when the first temperature difference value TPD1 is less than or equal to the first temperature difference threshold TD1, the third comparison unit CP3 outputs an adjustment signal to the threshold generating unit 2602, so that the threshold generating unit 2602 adjusts the voltage V corresponding to the first temperature threshold T1 , the size of the adjustment signal is related to the size of the first temperature difference value, the larger the first temperature difference value, the larger the adjustment signal, so that the first temperature threshold is reduced, so that the threshold generating unit 2602 generates the voltage V corresponding to the adjusted first temperature threshold T1 .

[0121] It can be understood that the over-temperature protection circuit 260 can also include a second comparison unit and a fourth comparison unit, and corresponding operation units, logic units, threshold generating units, etc. (not shown in the figure) to explain the specific implementation scheme of the over-temperature protection circuit 260 adjusting the second temperature threshold according to the second temperature difference when the second temperature difference is less than or equal to the second temperature difference threshold. The circuit schematic and implementation scheme are similar to the scheme defined when working in the normal mode, and this embodiment will not be repeated.

[0122] In the embodiments of the present application, the over-temperature protection circuit can adjust the corresponding temperature threshold according to the obtained temperature difference value, which can avoid the problem that the main power switch or the bypass switch is turned off when the temperature is low, reduce the temperature influence of the intelligent electronic switch body, and improve the application reliability of the intelligent electronic switch.

[0123] Exemplarily, Figure 5 is a circuit structure schematic diagram of an electronic device provided by the fifth embodiment of the present application. As Figure 5 shown, in this embodiment, the control circuit 21 includes a logic control unit 211, a first driving unit 212, and a second driving unit 213.

[0124] Referring to Figure 5 shown, the logic control unit 211 is connected with the first driving unit 212, the second driving unit 213, and the over-temperature protection circuit 260 respectively, the first driving unit 212 is further connected with the control end of the main power switch Q1, and the second driving unit 213 is further connected with the control end of the bypass switch Q2.

[0125] In the normal working mode, the logic control unit 211 drives the main power switch Q1 to open and conduct through the first driving unit 212; in the bypass mode, the logic control unit 211 drives the bypass switch Q2 to open and conduct through the second driving unit 213, and the power consumption of the first driving unit 212 is greater than that of the second driving unit 213.

[0126] Exemplarily, referring to Figure 5As shown, two driving units are arranged in the control circuit 21 to correspondingly control the switching states of the main power switch Q1 and the bypass switch Q2, so as to ensure the control branches of the main power switch Q1 and the bypass switch Q2 are isolated, and avoid the control logic of the main power switch Q1 and the bypass switch Q2 being confused.

[0127] As shown in the fifth embodiment of the present application, Figure 6 is another circuit structure schematic diagram of the electronic device provided by the fifth embodiment of the present application. As shown in Figure 6 As shown, when the switch circuit 22 includes MOS tubes, the main power switch Q1 can be an N-type MOS tube, and the bypass switch Q2 can be a P-type MOS tube. Correspondingly, the first driving unit 212 includes a first driving module and a boost module. The first end of the boost module is connected with the power supply end VBAT, and the other end thereof is connected with the first driving module. The boost module is used to boost the power of the input power supply end VBAT and then output, i.e., the voltage output by the boost module is greater than the power of the power supply end VBAT, so that the output voltage of the first driving module can make the gate-source voltage signal of the N-type MOS tube meet the opening requirement of the N-type MOS tube. However, in view of the conduction characteristic of the P-type MOS tube, the second driving unit 213 for driving the P-type MOS tube to open and conduct does not need a boost module and the like. Therefore, compared with the first driving unit 212, the second driving unit 213 at least saves the boost module, and thus the power consumption of the second driving unit 213 when working is lower than that of the first driving unit 212 when working.

[0128] As shown in the fifth embodiment of the present application, Figure 6 As shown, the boost module is implemented in the form of a charge pump. For example, the charge pump includes an oscillator, a P-type MOS tube CP P1, an N-type MOS tube CP N1, capacitors C1 and C2, diodes D1 and D2. The control ends of the P-type MOS tube CP P1 and the N-type MOS tube CP N1 are connected with the oscillator. The drain of the P-type MOS tube CP P1 is connected to the power supply end VBAT, and the source thereof is connected with the source of the N-type MOS tube CP N1, and the connection point is A1. The drain of the N-type MOS tube CP N1 is connected with the first power end Vs. Based on the voltage resistance capability of the P-type MOS tube CP P1 and the N-type MOS tube CP N1, for example, 5V, the first power end Vs is usually 5V lower than the voltage of the power supply end VBAT. One end of the capacitor C1 is connected with the connection point A1, and the other end thereof is connected with the cathode of the diode D1 and the anode of the diode D2. The anode of the diode D1 and one end of the capacitor C2 are both connected with the power supply end VBAT. The cathode of the diode D2 is connected with the other end of the capacitor C2. The oscillator is used to generate an oscillation frequency to turn on or turn off the P-type MOS tube CP P1 and the N-type MOS tube CP N1. The capacitor C1 is used to boost the voltage output by the charge pump. The capacitor C2 is used to store energy. The diodes D1 and D2 are used to limit the current direction.

[0129] Optionally, continuing to refer to Figure 6 As shown in the figure, the first drive module can include a switch tube D_P1 and a switch tube D_N1, the control end of the main power switch Q1 is connected with the drain of the switch tube D_P1 and the switch tube D_N1, the control end of the switch tube D_P1 and the switch tube D_N1 is connected to the logic control unit 211, the source of the switch tube D_P1 is connected with the output end of the boost module, and the source of the switch tube D_N1 is connected with the load output end OUT, so that the logic control unit 211 can make the main power switch Q1 open by controlling the switch tube D_P1 to be on and the switch tube D_N1 to be off, and make the main power switch Q1 to be off by controlling the switch tube D_P1 to be off and the switch tube D_N1 to be on.

[0130] As another example, when the main power switch Q1 and the bypass switch Q2 are both N-type switch tubes, the first drive unit 212 can include a first drive module and a first boost module, and the second drive unit 213 includes a second drive module and a second boost module. In the normal working mode, the logic control unit 211 controls the first boost module and the first drive module to work, and the output voltage of the first drive module is boosted by the first boost module by a first voltage amount, so that the first drive module drives the main power switch Q1 to be on. In the bypass mode, the logic control unit 211 controls the second boost module and the second drive module to work, and the output voltage of the second drive module is boosted by the second boost module by a second voltage amount, so that the second drive module drives the bypass switch Q2 to be on. Wherein, the first voltage amount is greater than the second voltage amount, and accordingly, the power consumption of the first boost module is greater than that of the second boost module, so the power consumption of the second drive unit 213 when working is greater than that of the first drive unit 212 when working.

[0131] It can be understood that in the embodiments of the present application, the specific structure and composition of each drive unit are not limited, and different components can be added according to actual circuit requirements. For example, the first drive unit 212 can also include a level shifter and other elements, which is connected between the logic control unit 211 and the first drive unit 212, and can convert low-voltage control signals into high-voltage control signals to realize low-voltage logic control over high-voltage output stages, thereby realizing the driving of the main power switch Q1 to be on.

[0132] Exemplarily, continuing to refer to Figure 6 As shown in the figure, the second drive unit 213 is a current-limiting drive unit; in the normal working mode of the intelligent electronic switch, the first drive unit 212 drives the main power switch Q1 to work in the linear resistance region, and in the bypass mode of the intelligent electronic switch, the current-limiting drive unit drives the bypass switch Q2 to work in the linear resistance region or the saturation region.

[0133] It can be understood that in the embodiment, when the second driving unit 213 is a current-limiting driving unit, the current-limiting driving unit driving the P-type MOS tube to open and conduct does not need a voltage boosting module and the like, and the current-limiting value flowing through the bypass switch Q2 can be set, so that the current-limiting driving unit reduces power consumption relative to the first driving unit 212.

[0134] Continuing to refer to Figure 6 As shown in the embodiment, the current-limiting driving unit can include a transistor M1 and a constant current source I1, the transistor M1 and the bypass switch Q2 are of the same type, the transistor M1 and the constant current source I1 are connected to form a current-limiting driving branch, one end of the current-limiting driving branch is connected to one end of the bypass switch Q2, the other end is connected to the power supply terminal VBAT or the power ground terminal GND, and the control terminal is connected to the logic control unit 211. The drain of the transistor M1 is connected to the control terminal, and the control terminal is also connected to the control terminal of the bypass switch Q2. At this time, in the bypass mode, the logic control unit 211 controls the current-limiting driving branch, so that the current-limiting driving unit works to control the bypass switch Q2 to open and conduct through the current-limiting driving unit. The current flowing through the bypass switch Q2 is less than or equal to the first current-limiting value set by the current-limiting driving unit. The first current-limiting value is related to the current value provided by the constant current source I1 and the current mirror ratio of the transistor M1 and the bypass switch Q2, and the first current-limiting value is less than the maximum current value flowing through the main power switch Q1 in the normal working mode.

[0135] In a possible design, the transistor M1 and the bypass switch Q2 are both N-type switch tubes, one end of the constant current source I1 is connected to the power supply terminal VBAT and the other end is connected to the drain of the transistor M1, the source of the transistor M1 is connected to the source of the bypass switch Q2 and both are connected to the load output terminal OUT or the power ground terminal GND. Optionally, when the bypass switch Q2 is connected as a high-side switch, the source of the bypass switch Q2 is connected to the load output terminal OUT, and when the bypass switch Q2 is connected as a low-side switch, the source of the bypass switch Q2 is connected to the power ground terminal GND.

[0136] In another possible design, referring to Figure 6 As shown in the embodiment, the transistor M1 and the bypass switch Q2 are both P-type switch tubes, at this time, one end of the constant current source I1 is connected to the power ground terminal GND or the load output terminal OUT and the other end is connected to the drain of the transistor M1, the source of the transistor M1 and the source of the bypass switch Q2 are connected and both are connected to the power supply terminal VBAT or the load output terminal OUT. Optionally, when the bypass switch Q2 is connected as a high-side switch, the source of the bypass switch Q2 is connected to the power supply terminal VBAT, and when the bypass switch Q2 is connected as a low-side switch, the source of the bypass switch Q2 is connected to the load output terminal OUT.

[0137] In the embodiment of the present application, the bypass switch Q2 comprises a MOS tube, and the ratio of the first current limiting value to the current value provided by the constant current source I1 is equal to the ratio of the width-length ratio of the bypass switch Q2 to the width-length ratio of the transistor M1. In this embodiment, the current value provided by the constant current source I1 is equal to the current value flowing through the transistor M1, and the ratio of the current value flowing through the bypass switch Q2 to the output current value of the transistor M1 is equal to the ratio of the width-length ratio of the bypass switch Q2 to the width-length ratio of the transistor M1. In addition, when the transistor M1 and the bypass switch Q2 work in the saturation region, the current value flowing through the bypass switch Q2 is equal to the first current limiting value set by the current limiting driving unit, and thus, in this embodiment, the ratio of the first current limiting value to the current value provided by the constant current source I1 is equal to the ratio of the width-length ratio of the bypass switch Q2 to the width-length ratio of the transistor M1.

[0138] Optionally, the area occupied by the bypass switch Q2 is smaller than the area occupied by the main power switch Q1, the current value flowing through the bypass switch Q2 in the bypass mode is smaller than or equal to the first current limiting value set by the current limiting driving unit, and the first current limiting value is smaller than the maximum current value flowing through the main power switch Q1 in the normal working mode. For example, in the present application, the first current limiting value can be in the range of 1 uA to 100 uA, for example, the first current limiting value can be 10 uA. It can be understood that the first value range can also be other values, and the present embodiment does not limit the first value range.

[0139] Optionally, the present embodiment does not limit the way of controlling the current limiting driving unit to be enabled, for example, as an example, the constant current source I1 comprises an enable terminal, and in the bypass mode, the logic control unit 211 can turn on the current limiting driving branch by controlling the constant current source I1 to be enabled, so as to make the current limiting driving unit work; as another example, the current limiting driving branch can further comprise a second switch module, and in the bypass mode, the logic control unit 211 can make the constant current driving unit work by controlling the second switch module to be turned on.

[0140] Optionally, in the present embodiment, in the normal working mode, the first driving unit 212 drives the main power switch Q1 to work in the linear resistance region; and in the bypass mode, the current limiting driving unit drives the bypass switch Q2 to work in the linear resistance region or the saturation region.

[0141] Optionally, in the bypass mode, when the rated working current of the load is smaller than or equal to the first current limiting value, the bypass switch Q2 works in the linear resistance region; and when the rated working current of the load is greater than the first current limiting value, the bypass switch Q2 works in the saturation region.

[0142] As an example, in the normal working mode, after the first driving unit 212 drives the main power switch Q1 to be turned on, the current value flowing through the main power switch Q1 can vary in the output current range that the main power switch Q1 can provide according to the load size, and according to the output characteristic curve of the power switch, the main power switch Q1 works in the linear resistance region at this time. In the bypass mode, after the current-limiting driving unit drives the bypass switch Q2 to be turned on, when the current value flowing through the bypass switch Q2 is less than the first current-limiting value set by the current-limiting driving unit, the current value flowing through the bypass switch Q2 can vary according to the load size, and at this time, the bypass switch Q2 works in the linear resistance region; when the current value flowing through the bypass switch Q2 reaches the first current-limiting value set by the current-limiting driving unit, the current value flowing through the bypass switch Q2 basically no longer varies with the increase of the load, and at this time, the bypass switch Q2 works in the saturation region.

[0143] It can be understood that, in specific implementation, the current-limiting driving unit can also be implemented by other structures, for example, the current-limiting driving unit can also include one or more mirror units, or the constant current source is replaced by a constant current source of other specifications and one or more mirror units, etc., and accordingly, the connection relationship of the internal circuit elements of the current-limiting driving unit can also be adjusted according to actual needs, etc., and the embodiment does not limit the specific structure of the current-limiting driving unit.

[0144] In the embodiment, the current-limiting driving unit can set the maximum current value flowing through the bypass switch through the current source and the transistor, and the structure is simple and easy to implement, and compared with the first driving unit, the power consumption is lower, and the power consumption is saved under the condition of meeting the load current demand.

[0145] Optionally, on the basis of the above embodiment, Figure 7 is a circuit structure schematic diagram of an electronic device provided by the sixth embodiment of the present application. As Figure 7 shown, the intelligent electronic switch 20 can also include a diagnosis circuit 23 and a diagnosis output end CS, the diagnosis circuit 23 is connected with the logic control unit 211 and the diagnosis output end CS, and the diagnosis circuit 23 is used to collect the parameter information of the intelligent electronic switch 20 and output to the microcontroller 40 through the diagnosis output end CS, so that the microcontroller 40 diagnoses the state of the intelligent electronic switch 20.

[0146] In the normal working mode, the logic control unit 211 controls the diagnostic circuit 23 to work in the first diagnostic state, and in the bypass mode, the logic control unit 211 controls the diagnostic circuit 23 to work in the second diagnostic state, and the power consumption of the diagnostic circuit 23 working in the second diagnostic state is less than that of the diagnostic circuit 23 working in the first diagnostic state. For example, in the normal working mode, the diagnostic circuit 23 works normally, and in the bypass mode, the diagnostic circuit 23 stops working or part of the modules of the diagnostic circuit 23 stop working or the diagnostic circuit works in an energy-saving state or part of the modules of the diagnostic circuit 23 work in an energy-saving state, wherein the energy-saving state can be a periodic working state.

[0147] In the embodiment, the diagnostic circuit 23 can monitor some working indicators of the intelligent electronic switch 20 and obtain parameter information of the intelligent electronic switch 20 when the main power switch Q1 and / or the bypass switch Q2 is in the on-conduction state, and output to the microcontroller 40 through the diagnostic output terminal CS, so that the microcontroller 40 can diagnose the state of the intelligent electronic switch 20 based on the received parameter information.

[0148] For example, in the normal working mode, the diagnostic circuit 23 works normally, and in the bypass mode, the diagnostic circuit 23 stops working. Thus, when the intelligent electronic switch 20 works in the normal working mode, the diagnostic circuit 23 can obtain at least one of the current information flowing through the main power switch Q1, the temperature information of the main power switch Q1, the power supply voltage information of the intelligent electronic switch 20, and the abnormal indication information of the abnormal turn-off of the main power switch Q1, and can output the corresponding parameter information to the microcontroller 40 through the diagnostic output terminal CS based on the function selection of the microcontroller 40, so that the microcontroller 40 diagnoses the state of the intelligent electronic switch 20, thereby more accurately controlling the working state of the intelligent electronic switch 20.

[0149] In the technical scheme, the intelligent electronic switch can also control the working state of the diagnostic circuit according to the working mode of the intelligent electronic switch when the main power switch or the bypass switch is in the on-conduction state, thereby effectively reducing the self-consumption power of the intelligent electronic switch, prolonging the endurance time of the battery connected to the intelligent electronic switch, and improving the application experience on the basis of ensuring the normal working of the load.

[0150] Optionally, in the embodiment of the present application, with reference to Figure 7As shown, the intelligent electronic switch 20 can further include a protection circuit 24 connected with the logic control unit 211, the protection circuit 24 is used to protect the intelligent electronic switch 20. When the intelligent electronic switch 20 works in the normal working mode, the logic control unit 211 controls the main power switch Q1 to be turned on via the first drive unit 212, and can also control the protection circuit 24 to work in the first protection state. When the intelligent electronic switch 20 works in the bypass mode, the logic control unit 211 controls the bypass switch Q2 to be turned on via the current limiting drive unit, and can also control the protection circuit 24 to work in the second protection state. Wherein, the power consumption of the protection circuit 24 working in the second protection state is less than the power consumption of the protection circuit 24 working in the first protection state, so as to reduce the power consumption of the protection circuit 24 in the bypass mode.

[0151] For example, the protection circuit 24 can include at least one of a current protection unit, an over-temperature protection circuit 260, a voltage protection unit, etc.

[0152] Wherein, the current protection unit can trigger current protection of the high-side intelligent electronic switch 20 when the current flowing through the switch circuit 22 (including the main power switch Q1 (N-type switch tube) and / or the bypass switch Q2 (P-type switch tube)) is abnormal. The current protection unit includes an over-current protection unit and / or a current limiting protection unit. The over-current protection unit outputs an over-current protection signal when it is determined that the current sampling value is greater than the over-current protection threshold, so as to trigger the control circuit 21 to drive the switch circuit 22 to be turned off. The current limiting protection unit outputs a current limiting protection signal when it is determined that the current sampling value is greater than the current limiting protection threshold, so as to trigger the control circuit 21 to adjust the size of the control signal output to the control end of the switch circuit 22, so as to reduce the current flowing through the switch circuit 22, and then make the current sampling value less than or equal to the current limiting protection threshold. Optionally, the power consumption of the current protection unit in the bypass mode is less than the power consumption of the current protection unit in the normal working mode, for example, the current protection unit stops working in the bypass mode.

[0153] The temperature protection unit is used to output a temperature protection signal when detecting that the temperature of the switch circuit 22 is abnormal, so as to trigger temperature protection of the switch circuit 22. The power consumption of the temperature protection unit in the bypass mode is less than the power consumption of the temperature protection unit in the normal working mode, for example, the temperature protection threshold of the temperature protection unit in the bypass mode is less than the temperature protection threshold of the temperature protection unit in the normal working mode, or a temperature protection unit with lower power consumption is selected in the bypass mode, etc.

[0154] The voltage protection unit is used to output a voltage abnormal signal when detecting that the voltage of the power supply end VBAT is abnormal, so as to trigger voltage protection of the high-side intelligent electronic switch 20. The power consumption of the voltage protection unit in the bypass mode is less than the power consumption of the voltage protection unit in the normal working mode.

[0155] Optionally, the voltage protection unit is configured to trigger the voltage protection of the intelligent electronic device 20 when detecting that the voltage of the power supply terminal VBAT is abnormal and outputting a voltage abnormal signal, and the power consumption of the voltage protection unit in the bypass mode is less than the power consumption of the voltage protection unit in the normal working mode.

[0156] Optionally, the voltage protection unit can include an overvoltage protection unit and / or an undervoltage protection unit. The overvoltage protection unit is configured to trigger the overvoltage protection of the intelligent electronic device 20 when detecting that the voltage of the power supply terminal VBAT is higher than a first voltage threshold, for example, when the voltage of the power supply terminal VBAT is greater than the first voltage threshold, the switch circuit 22 can be turned off by the logic control unit 211 or the voltage of the power supply terminal VBAT can be pulled down by the voltage clamping circuit to reduce the voltage of the power supply terminal VBAT, thereby protecting the intelligent electronic device 20 from being damaged by high voltage. The undervoltage protection unit is configured to trigger the undervoltage protection of the intelligent electronic device 20 when detecting that the voltage of the power supply terminal VBAT is lower than a second voltage threshold, for example, when the voltage of the power supply terminal VBAT is less than the second voltage threshold, the intelligent electronic device 20 can be prohibited from being used by turning off the switch circuit 22 through the logic control unit 211, thereby improving the reliability of the intelligent electronic device 20 when being used.

[0157] In practical applications, multiple protection units or one or more of multiple protection units can be designed in the intelligent electronic device 20, for example, the intelligent electronic device 20 can have a current protection unit, an over-temperature protection circuit 260, a voltage protection unit, etc., or only have one or several of them. When at least two protection units are designed in the intelligent electronic device 20, at least one protection unit in the protection circuit 24 stops working or works in an energy-saving state in the bypass mode, so as to reduce the power consumption of the protection circuit 24, and further reduce the self-consumption of the intelligent electronic device 20.

[0158] Optionally, in other embodiments of the present application, continuing to refer to Figure 7 As shown in the figure, the intelligent electronic device 20 further includes a first functional terminal FU1 and a second functional terminal FU2, both of which are connected with the logic control unit 211; when the first functional terminal FU1 receives a first signal and the second functional terminal FU2 receives a second signal, the logic control unit 211 controls the intelligent electronic device 20 to enter the bypass mode; wherein the self-consumption of the intelligent electronic device 20 in the bypass mode is less than the self-consumption of the intelligent electronic device 20 in the normal working mode, and in the normal working mode, the main power switch Q1 is in an open conduction state, while in the bypass mode, the bypass switch Q2 is in an open conduction state.

[0159] For example, in order to be fully compatible with the original function of the intelligent electronic switch 20, the first function end FU1 and the second function end FU2 can reuse any two of the input end Input, the diagnosis enable end SEN, the first function selection end SEL1, the second function selection end SEL0, the diagnosis release end Fault and other terminals of the intelligent electronic switch 20.

[0160] As an example, the first function end FU1 can reuse the diagnosis enable end SEN, and the second function end FU2 can reuse the input end Input. In other examples, the first function end FU1 and the second function end FU2 can also reuse other terminals, which are not limited by the embodiments of the present application. It can be understood that in other embodiments of the present application, the first function end FU1 and / or the second function end FU2 can also be a newly added terminal of the intelligent electronic switch 20, or a combination of a newly added terminal and an original terminal, which are not limited by the embodiments of the present application.

[0161] Optionally, as shown in Figure 7 The logic control unit 211 can receive the first signal from the microcontroller 40 through the first function end FU1 and receive the second signal from the microcontroller 40 through the second function end FU2. In other embodiments, the logic control unit 211 can also receive the first signal and the second signal from other devices or circuits through the first function end FU1 and the second function end FU2, which are not limited by the embodiments of the present application.

[0162] Optionally, when the intelligent electronic switch 20 works in the normal working mode, if the first function end FU1 receives the first signal and the second function end FU2 receives the second signal, the logic control unit 211 can control the intelligent electronic switch 20 to enter the bypass mode to reduce the self-consumption power of the intelligent electronic switch 20.

[0163] It can be understood that other parts not described in detail in an embodiment of the present application can be referred to the description in other embodiments of the present application, which will not be described here.

[0164] Optionally, on the basis of each of the above embodiments, the embodiments of the present application further provide an integrated circuit chip, which includes the intelligent electronic switch 20 in each of the above embodiments, that is, the intelligent electronic switch 20 described above can be made on the same semiconductor substrate. Wherein, the power supply end VBAT is a power supply pin, the power ground end GND is a power ground pin, and the load output end OUT is a load output pin.

[0165] Optionally, other embodiments of the present application also provide a chip product, which can include the above-mentioned intelligent electronic switch 20. As an example, the elements of the intelligent electronic switch 20 except the main power switch Q1 are located on a first integrated circuit chip, and the main power switch Q1 is located on a second integrated circuit chip, that is, the first integrated circuit chip is made on one semiconductor substrate, and the second integrated circuit chip is made on another semiconductor substrate.

[0166] As another example, the elements of the intelligent electronic switch 20 except the main power switch Q1 and the bypass switch Q2 are located on a first integrated circuit chip, and the main power switch Q1 and the bypass switch Q2 are located on a second integrated circuit chip.

[0167] In which, the power supply end VBAT is a power supply pin, the power ground end GND is a power ground pin, and the load output end OUT is a load output pin. The power supply pin and the power ground pin are located on the first integrated circuit chip, and the load output pin is located on the second integrated circuit chip. In addition, the first integrated circuit chip also includes other pins, such as input pins, diagnosis enable pins, diagnosis output pins, first drive pins, etc., and the second integrated circuit chip also includes other pins, such as second drive pins. The first drive pins are respectively connected to the drive circuit and the second drive pins, and the second drive pins are connected to the control ends of the main power switch Q1 and / or the bypass switch Q2. It can be understood that the first integrated circuit chip and the second integrated circuit chip can also add other pins, omit relevant pins, or combine relevant pins according to needs. Here, the first integrated circuit chip and the second integrated circuit chip are packaged into one product.

[0168] In addition, in other embodiments of the present application, an automobile is also provided, which can be an electric vehicle, such as an electric passenger car or an electric commercial vehicle, etc., or a hybrid vehicle, a fuel vehicle, etc. Referring to FIG. 8, the automobile includes a battery 10, a load 30, a microcontroller 40 and an intelligent electronic switch 20. Figures 1 to 7

[0169] The microcontroller 40 is connected with the intelligent electronic switch 20 for controlling the intelligent electronic switch 20, and the intelligent electronic switch 20 feeds back its state and related parameter information to the microcontroller 40 for processing.

[0170] It can be understood that the intelligent electronic switch and the integrated circuit chip of the present embodiment are not limited to be used in automotive electronics, but can also be used in industrial automation, aerospace, etc. Here, no further description is made.

[0171] ​Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. It is intended that the specification and examples be considered as exemplary only, with the true scope and spirit of the application being indicated by the following claims.

[0172] It is to be understood that the application is not limited to the precise construction herein disclosed and shown in the drawings, and that various modifications and changes can be made by those skilled in the art without departing from the scope of the application. The scope of the application is limited only by the claims that follow.

Claims

1. An intelligent electronic switch, characterized in that, The intelligent electronic switch comprises a power supply end, a power ground end, a load output end, a control circuit, a main power switch, a first temperature detection element and an over-temperature protection circuit. The power supply end and the power ground end are used for connecting with a battery, and the load output end is used for connecting with a load. In the normal working mode, the main power switch is turned on, the over-temperature protection circuit obtains the temperature value of the main power switch through the first temperature detection element, and outputs a first over-temperature signal when the temperature value of the main power switch is higher than a first temperature threshold, so as to trigger the control circuit to control the main power switch to be turned off. The intelligent electronic switch further comprises a bypass switch and a second temperature detection element. In the bypass mode, the control circuit drives the bypass switch to be turned on, the over-temperature protection circuit obtains the temperature value of the bypass switch through the second temperature detection element, and outputs a second over-temperature signal when the temperature value of the bypass switch is higher than a second temperature threshold, so as to make the control circuit control the bypass switch to be turned off.

2. The intelligent electronic switch of claim 1, wherein, The intelligent electronic switch further comprises a first element connected with the first temperature detection element through a first switch unit to form a first detection branch, and connected with the second temperature detection element through a second switch unit to form a second detection branch. In the normal working mode, the control circuit controls the first switch unit to be turned on to turn on the first detection branch, at this time, the voltage of the first temperature detection point is used to represent the temperature value of the main power switch, and the over-temperature protection circuit is used to compare the voltage of the first temperature detection point with a first voltage threshold to determine whether to output the first over-temperature signal. In the bypass mode, the control circuit controls the second switch unit to be turned on to turn on the second detection branch, at this time, the voltage of the second temperature detection point is used to represent the temperature value of the bypass switch, and the over-temperature protection circuit is used to compare the voltage of the second temperature detection point with a second voltage threshold to determine whether to output the second over-temperature signal.

3. The intelligent electronic device of claim 1, wherein, The intelligent electronic switch further comprises a third temperature detection element, which is arranged at a third position in the intelligent electronic switch, the third position being away from the first position where the first temperature detection element is arranged and away from the second position where the second temperature detection element is arranged, and the third temperature detection element is connected with the over-temperature protection circuit; The over-temperature protection circuit is further configured to obtain a first ambient temperature value of the main power switch via the third temperature detection element in the normal working mode, and output a first over-temperature signal when a first temperature difference between the temperature value of the main power switch and the first ambient temperature value is greater than a first temperature difference threshold, so as to control the control circuit to control the main power switch to be turned off; and obtain a second ambient temperature value of the bypass switch via the third temperature detection element in the bypass mode, and output a second over-temperature signal when a second temperature difference between the temperature value of the bypass switch and the second ambient temperature value is greater than a second temperature difference threshold, so as to control the control circuit to control the bypass switch to be turned off.

4. The intelligent electronic device of claim 1, wherein, The bypass switch is arranged away from the main power switch; In the normal working mode, the over-temperature protection circuit is further configured to obtain a first ambient temperature value of the main power switch via the second temperature detection element, and output a first over-temperature signal when a first temperature difference between the temperature value of the main power switch and the first ambient temperature value is greater than a first temperature difference threshold, so as to control the control circuit to control the main power switch to be turned off; In the bypass mode, the over-temperature protection circuit is further configured to obtain a second ambient temperature value of the bypass switch via the first temperature detection element, and output a second over-temperature signal when a second temperature difference between the temperature value of the bypass switch and the second ambient temperature value is greater than a second temperature difference threshold, so as to control the control circuit to control the bypass switch to be turned off.

5. The intelligent electronic device according to claim 3 or 4, characterized in that The over-temperature protection circuit is further configured to output a first over-temperature release signal when the first temperature difference is less than a third temperature difference threshold and the temperature value of the main power switch is less than a third temperature threshold, so as to control the control circuit to control the main power switch to be turned on again; and output a second over-temperature release signal when the second temperature difference is less than a fourth temperature difference threshold and the temperature value of the bypass switch is less than a fourth temperature threshold, so as to control the control circuit to control the bypass switch to be turned on again; The third temperature difference threshold is less than the first temperature difference threshold, the fourth temperature difference threshold is less than the second temperature difference threshold, the third temperature threshold is less than the first temperature threshold, and the fourth temperature threshold is less than the second temperature threshold.

6. The intelligent electronic switch of claim 5, wherein, In the normal working mode, the over-temperature protection circuit is further configured to adjust the first temperature threshold according to the first temperature difference when the first temperature difference is less than or equal to the first temperature difference threshold, and the greater the first temperature difference is, the smaller the first temperature threshold is; And / or In the bypass mode, the over-temperature protection circuit is further configured to adjust the second temperature threshold according to the second temperature difference when the second temperature difference is less than or equal to the second temperature difference threshold, and the greater the second temperature difference is, the smaller the second temperature threshold is.

7. The intelligent electronic device according to any of claims 1 to 4, characterized in that The control circuit comprises a logic control unit, a first driving unit and a second driving unit; The logic control unit is connected with the first driving unit, the second driving unit and the over-temperature protection circuit respectively, the first driving unit is further connected with the control end of the main power switch, and the second driving unit is further connected with the control end of the bypass switch. In the normal working mode, the logic control unit drives the main power switch to be turned on via the first driving unit; in the bypass mode, the logic control unit drives the bypass switch to be turned on via the second driving unit, and the power consumption of the first driving unit is greater than that of the second driving unit.

8. The intelligent electronic device of claim 7, wherein, The second driving unit is a current-limiting driving unit. In the normal working mode of the intelligent electronic switch, the first driving unit drives the main power switch to work in the linear resistance region, and in the bypass mode of the intelligent electronic switch, the current-limiting driving unit drives the bypass switch to work in the linear resistance region or the saturation region.

9. An integrated circuit chip, characterized by The intelligent electronic switch comprises the intelligent electronic switch according to any one of claims 1 to 8, wherein the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin.

10. A chip product, characterized by The intelligent electronic switch comprises the intelligent electronic switch according to any one of claims 1 to 8, wherein the elements of the intelligent electronic switch, except the main power switch and the first temperature detection element, are located on a first integrated circuit chip, and the main power switch and the first temperature detection element are located on a second integrated circuit chip. The power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin, the power supply pin and the power ground pin are located on a first integrated circuit chip, and the load output pin is located on a second integrated circuit chip.

11. A chip product, characterized by The intelligent electronic switch comprises the intelligent electronic switch according to any one of claims 1 to 8, wherein the elements of the intelligent electronic switch, except the main power switch, the first temperature detection element, the bypass switch and the second temperature detection element, are located on a first integrated circuit chip, and the main power switch, the first temperature detection element, the bypass switch and the second temperature detection element are located on a second integrated circuit chip. The power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin, the power supply pin and the power ground pin are located on a first integrated circuit chip, and the load output pin is located on a second integrated circuit chip.

12. An automobile characterized by comprising: The intelligent electronic switch comprises the intelligent electronic switch according to any one of claims 1 to 8, or the integrated circuit chip according to claim 9, or the chip product according to claim 10 or 11. Further comprising a battery, a load and a microcontroller, wherein the positive pole of the battery is connected with the power supply end, the negative pole of the battery is connected with the power ground end, one end of the load is connected with the load output end, the other end of the load is connected with the power ground end or the power supply end, and the microcontroller is connected with the intelligent electronic switch.

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