X-ray metrology system with high signal resolution

Abstract

The utility model provides an X-ray measuring system with high signal resolution. The X-ray measuring system comprises an X-ray generator, an X-ray optical assembly group, a multi-dimensional X-ray detector and a processing device. The X-ray generator is configured to generate an incident X-ray beam. And the X-ray optical assembly group is used for guiding the incident X-ray beam to a sample to be detected. And the multi-dimensional X-ray detector is used for receiving measurement X-rays generated by irradiating the sample to be detected by the incident X-ray beam. The multi-dimensional X-ray detector includes an insulating layer, a plurality of first electrode layers, a photodiode layer, an X-ray conversion material layer made of amorphous selenium, and a second electrode layer. The processing device is configured to collect an X-ray signal to be measured and generate a plurality of measurements, where the plurality of measurements includes a plurality of modal signals of different orders.

Description

Technical Field

[0001] This application relates to a measurement system, and more particularly to an X-ray measurement system with high signal resolution. Background Technology

[0002] In today's semiconductor manufacturing, the continuous shrinking of component sizes and the increasing complexity of structures pose unprecedented challenges to inspection technologies. Modern semiconductor structures, such as Gate-All-Around (GAA) and Fin Field-Effect Transistor (FinFET), have complex three-dimensional structures that require high-precision inspection technologies to ensure process stability and component reliability.

[0003] However, traditional optical detection techniques can no longer meet these requirements. Therefore, X-ray metrology, also a non-destructive measurement technique, utilizes the high energy and short wavelength characteristics of X-rays, giving it extremely high penetration ability and spatial resolution. To date, X-ray metrology has developed various methods for collecting higher-order signals to identify the three-dimensional microstructures in samples.

[0004] However, this technology still has its drawbacks, the most significant being the low signal strength, which results in poor resolution. To overcome this, a longer signal collection time is needed to increase the signal-to-noise ratio, or a sufficiently stable X-ray source or a more sensitive detector is required; however, these methods increase equipment or time costs. Utility Model Content

[0005] The technical problem to be solved by this application is to provide an X-ray measurement system with high signal resolution to address the shortcomings of the prior art, thereby improving the intensity of high-order X-ray signals and thus improving the resolution.

[0006] To address the aforementioned technical problems, one technical solution adopted in this application is to provide an X-ray measurement system with high signal resolution. The high-signal-resolution X-ray measurement system includes: an X-ray generator configured to generate an incident X-ray beam; an X-ray optical assembly for guiding the incident X-ray beam to a sample to be measured; a multi-dimensional X-ray detector for receiving a measurement X-ray generated by the measurement X-ray beam irradiating the sample to be measured. The multi-dimensional X-ray detector includes: an insulating layer; a plurality of first electrode layers disposed on the insulating layer; a photodiode layer disposed on the insulating layer; an X-ray conversion material layer disposed on the photodiode layer and made of amorphous selenium; a second electrode layer disposed on the X-ray conversion material layer; and a processing device connected to the multi-dimensional X-ray detector and configured to collect the X-ray signal generated by the measurement X-ray received by the multi-dimensional X-ray detector, and generate multiple measurement results corresponding to multiple structural parameters of the sample to be measured, wherein the multiple measurement results include multiple modal signals of different orders.

[0007] Optionally, the photodiode layer includes: a first semiconductor layer disposed on the insulating layer and having a first conductivity type; and a second semiconductor layer disposed on the first semiconductor layer and having a second conductivity type.

[0008] Optionally, the first semiconductor layer and the second semiconductor layer are respectively an N-type silicon layer and a P-type silicon layer.

[0009] Optionally, the multidimensional X-ray detector further includes an electron blocking layer disposed between the second electrode layer and the X-ray conversion material layer.

[0010] Optionally, the thickness of the X-ray conversion material layer is greater than 50 μm.

[0011] Optionally, the plurality of first electrode layers are plurality of polycrystalline silicon electrode layers.

[0012] Optionally, the step of collecting the X-ray signal to be tested and generating multiple measurement results corresponding to the sample to be tested includes: obtaining multiple signal patterns within a predetermined angle range through the multi-dimensional X-ray detector; and extracting multiple modal signals corresponding to different orders for each signal pattern.

[0013] Optionally, the high signal resolution X-ray measurement system further includes a multi-axis sample stage for carrying the sample to be measured.

[0014] Optionally, the multi-axis sample stage has a stage moving mechanism and a stage rotating mechanism. The stage moving mechanism is used to move the sample to be tested along one or more of a first axis, a second axis, and a third axis, and the stage rotating mechanism is used to rotate the sample to be tested around one or more of the first axis, the second axis, and the third axis.

[0015] Optionally, the multidimensional X-ray detector is mounted on an X-ray rotation mechanism to rotate the multidimensional X-ray detector around the sample to be tested; wherein, the processing device is further configured to control the rotation of the X-ray rotation mechanism to enable the multidimensional X-ray detector to acquire multiple diffraction patterns within the predetermined angle range.

[0016] One of the advantages of this application is that the X-ray measurement system provided by this application can improve conversion efficiency and signal resolution by using a multi-dimensional X-ray detector with a direct light-gathering material (amorphous selenium material) in the structure. Through theoretical calculations, signal-to-noise ratio analysis, and actual measurement of the reflected high-order signal of the multi-dimensional grating structure at soft X-ray wavelengths, under the same material thickness and the same X-ray source energy, the conversion efficiency can be improved by about 1.5 times compared to existing X-ray detectors, and the signal resolution can also be improved by about 48.76%.

[0017] The other effects and embodiments of this application are described in detail below with reference to the accompanying drawings. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of an X-ray measurement system with high signal resolution according to an embodiment of this application;

[0020] Figure 2 This is a cross-sectional view of a multi-dimensional X-ray detector according to an embodiment of this application;

[0021] Figure 3 The embodiments of this application present the actual measurement results and simulation results of high-order signals of a sample under test with a one-dimensional grating measured using an X-ray detector with a silicon material layer.

[0022] Figure 4 This is a graph showing the relationship between the actual SNR and the intensity of the reflected or scattered signal in the embodiments of this application;

[0023] Figure 5 This is a simulation scatter plot comparing the effects of amorphous selenium material layers and silicon material layers on SNR in the embodiments of this application. Detailed Implementation

[0024] The following specific examples illustrate the implementation of the "X-ray metrology system with high signal resolution" disclosed in this application. Those skilled in the art can understand the advantages and effects of this application from the content disclosed in this specification. This application can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this application. Furthermore, the accompanying drawings are for simple illustration only and are not depictions of actual dimensions, as stated in advance. The following embodiments will further describe the relevant technical content of this application in detail, but the disclosed content is not intended to limit the scope of protection of this application. Additionally, the term "or" used herein may include, depending on the actual situation, any combination of any one or more of the associated listed items.

[0025] Figure 1 This is a schematic diagram of an X-ray measurement system with high signal resolution according to an embodiment of this application. (See also...) Figure 1 As shown, this application provides an X-ray measurement system 1 with high signal resolution, which includes an X-ray generator 10, an X-ray optical assembly 12, a multi-dimensional X-ray detector 14, and a processing device 16. The X-ray generator 10 may include an X-ray tube, which contains an electron beam emitter and a target. The target is bombarded by an accelerated electron beam to generate an incident X-ray beam Lx. Furthermore, by selecting different target materials, such as copper (Cu), iron (Fe), molybdenum (Mo), aluminum (Al), magnesium (Mg), etc., measurement X-ray beams Lx with different energies or wavelengths (or frequencies) can be generated.

[0026] X-ray optics assembly 12 is used to guide the incident X-ray beam Lx to the sample under test SP. The sample under test SP may be, for example, a one-dimensional grating, a two-dimensional grating, a gate-all around and complementary field effect transistor (GAA-FET) structure, a fin field-effect transistor (FinFET) structure, or a high aspect ratio three-dimensional NAND flash memory with repeated stacking and interconnection in the vertical direction.

[0027] The sample SP to be tested can be placed on a multi-axis sample stage 11, which is, for example, a multi-axis movable stage, such as a three-axis tilting platform or a ball-and-socket tilting platform, to support the sample SP. The multi-axis sample stage 11 may have a stage moving mechanism and a stage rotating mechanism. The stage moving mechanism may include, for example, stepper motors corresponding to the three axes, for moving the sample SP along one or more of the X-axis, Y-axis, and Z-axis. By controlling the stepper motor of each axis, the sample SP can be precisely moved to different positions. Taking a ball-and-socket tilting platform as an example, the stage rotating mechanism may be, for example, a ball-and-socket joint connected to the platform, allowing the sample SP to rotate around one or more of the X-axis, Y-axis, and Z-axis. In detail, the rotation mechanism of the multi-axis sample stage 11 may include controlling the azimuth angle θ of rotation around the Y-axis and the azimuth angle Φ of rotation around the Z-axis, thereby realizing a full-range scan of the sample SP.

[0028] The X-ray optical assembly 12 may include one or more X-ray optical components. For example, the X-ray optical assembly 12 may include an X-ray mirror group, an X-ray slit, and an X-ray optical collimator sequentially disposed between the X-ray generator 10 and the sample SP. The X-ray mirror group may have a multilayer film structure to focus the incident X-ray beam Lx horizontally and vertically. The X-ray slit can be used to control the light flux of the incident X-ray beam Lx incident on the sample SP, and can also be used to control its vertical divergence angle. The incident X-ray beam Lx may be, for example, a beam with a wavelength range greater than 0.1 nanometers, and may include a hard X-ray beam, a soft X-ray beam, or a gamma-ray beam.

[0029] When the incident X-ray beam Lx irradiates the sample SP, depending on the incident angle, a measurement X-ray beam Lx' will be generated due to reflection, diffraction, scattering, or penetration. By placing the multi-dimensional X-ray detector 14 in an appropriate position, it can be used to receive the measurement X-ray beam Lx' generated by reflection, diffraction, scattering, or penetration. The multi-dimensional X-ray detector 14 can be a high spatial resolution detector with two or more dimensions and can collect signals from measurement X-ray beams Lx' with energies greater than 1 keV. Taking a one-dimensional grating structure as an example, the sample SP can be moved and rotated in multiple axes via the multi-axis stage 11. Therefore, after the incident X-ray beam Lx hits the sample SP, the signal can be collected by reflection or penetration. The signal receiving end is the multi-dimensional X-ray detector 14. The reflected or penetrated measurement X-ray beam Lx' generates a zero-order signal Lx'0 and positive and negative first-order higher-order signals Lx'+1 and Lx'-1 through different structures of the sample SP.

[0030] Figure 2 This is a cross-sectional view of a multi-dimensional X-ray detector according to an embodiment of this application. Please refer to... Figure 2The multidimensional X-ray detector 14 may include an insulating layer 140, a plurality of first electrode layers 142 disposed on the insulating layer 140, a photodiode layer 144, an X-ray conversion material layer 146 disposed on the photodiode layer 144, and a second electrode layer 148 disposed on the X-ray conversion material layer 146. The X-ray conversion material layer 146 is made of amorphous selenium and is a direct X-ray conversion material layer, which can directly convert photons of the received measurement X-ray beam Lx' into electron-hole pairs. Preferably, the thickness of the X-ray conversion material layer 146 is greater than 50 μm to ensure sufficient photon absorption.

[0031] In detail, the multi-dimensional X-ray detector 14 provided in this application embodiment adopts a back-emitting multi-dimensional detector design, and the second electrode layer 148 is a negatively biased electrode layer. The photodiode layer 144 may include a first semiconductor layer 1440 and a second semiconductor layer 1442. The first semiconductor layer 1440 is disposed on the insulating layer 140 and is of a first conductivity type, and the second semiconductor layer 1442 is disposed on the first semiconductor layer 1440 and is of a second conductivity type. In some embodiments, the first semiconductor layer and the second semiconductor layer 1440 are respectively an N-type silicon layer and a P-type silicon layer to form a photodiode. The second electrode layer 148 may be made of a conductive metal, such as Pt, Cr, or Au, or other suitable electrode materials.

[0032] Furthermore, the multidimensional X-ray detector 14 also includes an electron blocking layer 147 disposed between the second electrode layer 148 and the X-ray conversion material layer 146. When the measured X-ray beam Lx' passes through the X-ray conversion material 146, it is directly converted into electrons within the X-ray conversion material layer 146 through the photoelectric effect and then transferred. The negative bias electrode layer (second electrode layer 148) and the electron blocking layer 147 on the surface are used to block electrons from moving towards the second electrode layer 148. The electron blocking layer 147 may be, for example, arsenic-doped amorphous selenium, but this application is not limited to this.

[0033] When electrons are transferred to the P-type silicon layer (second semiconductor layer 1440), depletion regions are formed in the P-type and N-type silicon layers due to the difference in electron carrier concentration, and are transferred to the first electrode layer 142 via diffusion. Multiple first electrode layers 142 can be arranged, for example, in an array, and each first electrode layer 142 can be, for example, a polycrystalline silicon electrode layer. A portion of the insulating layer 140 can be formed first on the lower surface of the second semiconductor layer 1440, followed by the formation of multiple first electrode layers 142, and then another portion of the insulating layer 140 is formed to cover all the first electrode layers 142. The insulating layer 140 also separates each pair of polycrystalline silicon electrode layers, thereby protecting the first electrode layers 142 and preventing electrode leakage. The insulating layer 140 can be, for example, made of silicon dioxide.

[0034] Furthermore, in the multi-dimensional X-ray detector 14 of this application embodiment, the measured X-ray beam Lx' can be directly converted into an electronic signal (X-ray test signal Lx”) through the amorphous selenium material layer to obtain multi-mode signals in the diffraction pattern. In addition, the processing device 16 can use a vertical integration mode to process the received signal of the X-ray test signal Lx” from the multi-dimensional X-ray detector 14, and obtain the corresponding mode signal at a specific angular position according to the order, as the measurement result.

[0035] The processing device 16 may be, for example, a computer system including a processor and memory, configured to execute a stored instruction set or program code to control the X-ray generator 10 to generate an incident X-ray beam Lx, and to perform subsequent analysis on the X-ray test signal Lx' received by the multi-dimensional X-ray detector 14. Furthermore, during the measurement process, the processing device 16 can control the multi-axis sample stage 11 to move and / or rotate, so that the X-ray detector 14 receives multiple measurement X-rays Lx' generated at multiple X-ray measurement angles, and after signal amplification processing, generates multiple X-ray test signals Lx'. After receiving these X-ray test signals Lx', the processing device 16 can further generate multiple X-ray spectrum information corresponding to the multiple X-ray test signals Lx'. This X-ray spectrum information actually corresponds to the structural parameters of the sample SP under test, and can be directly output as the measurement result of the sample SP under test, or the X-ray spectrum information can be further fitted to obtain the structural parameters of the sample SP under test as the measurement result.

[0036] exist Figure 1 In this embodiment, the multidimensional X-ray detector 14 is also mounted on an X-ray rotation mechanism 15 to rotate the multidimensional X-ray detector around the sample SP (e.g., with the Z-axis as the axis). The X-ray rotation mechanism 15 may be, for example, a robotic arm, and is controlled and rotated by a processing device 16 to move the multidimensional X-ray detector 14 to a predetermined angle range and obtain multiple diffraction patterns, such as zero-order mode signals, first-order mode signals, and second-order mode signals.

[0037] Generally, the zero-order, first-order, and second-order modal signals obtained under different structural parameters (e.g., different linewidths) of the sample SP will change with variations in these parameters. Within a specific angular range, higher-order modal signals (first and second-order) exhibit more drastic reflectivity changes compared to lower-order modal signals (zero-order), under the same linewidth variation. In other words, higher-order modal signals (first and second-order) are highly sensitive to linewidth at specific angles. Based on this phenomenon, improving the signal quality of higher-order modal signals will help improve the accuracy of measurement results.

[0038] The performance of the multi-dimensional X-ray detector 14 used in the embodiments of this application is analyzed from the perspective of absorption efficiency. The absorption coefficient is a parameter of the material's ability to absorb and attenuate X-rays, please refer to the following formula (1):

[0039] I = I0e -μx Equation (1);

[0040] In equation (1), I is the intensity of the X-ray beam Lx' passing through the material, I0 is the intensity of the incident X-ray beam Lx, μ is the linear attenuation coefficient of the material, x is the thickness of the material, and the absorption efficiency η (attenuation efficiency) is the proportion of incident X-rays absorbed at a specific thickness. Specifically, it can be simplified with the absorption coefficient to obtain the following equation (2):

[0041]

[0042] In the embodiments of this application, compared with a silicon material layer of the same thickness, the X-ray conversion material layer 146 made of amorphous selenium is used. I0 is calculated using a soft X-ray energy of approximately 1.487 keV, and the linear attenuation coefficient μ of the X-ray conversion material layer 146 is... Se The linear attenuation coefficient of the silicon material layer is 2.688 μm⁻¹. Si The value is 0.127 μm-1. Substituting it into the above equation (2), it can be seen that, under the same thickness, the absorption efficiency of the amorphous selenium material layer is about 21.16 times that of the silicon material layer.

[0043] On the other hand, the signal conversion efficiency must take into account both the material absorption efficiency and its conversion efficiency. Therefore, in the multi-dimensional X-ray detector 14, X-rays or other radiation need to be converted into electron-hole pairs (the number of which is represented by N). After the electrons are collected, the electrons that flow form a current pulse, which can be further converted into the X-ray signal to be measured, Lx”, through the signal processing circuit (e.g., amplifier). Therefore, the number of electron-hole pairs will be proportionally correlated with the actual signal, and the number of generated electron-hole pairs is shown in the following formula (3):

[0044]

[0045] Where E is the X-ray energy, w is the average energy (eV) required to generate electron-hole pairs, and the average energy WSe required to generate electron-hole pairs in the X-ray conversion material layer 146 is 50, and the average energy WSi required to generate electron-hole pairs in the silicon material layer is 3.6. After substituting equation (2) into equation (3) for simplification, we can obtain the following equation (4):

[0046] E absorbed =E0×η=E0×(1-e -μxEquation (4);

[0047] Among them, E absorbed E0 represents the X-ray energy absorbed by the X-ray conversion material layer 146, and E0 represents the X-ray energy of the incident X-ray beam Lx.

[0048] Next, the number of electron-hole pairs generated by the two materials is compared. The number of electron-hole pairs generated by the X-ray conversion material layer 146 is NSe, and the number of electron-hole pairs generated by the silicon material layer is NSi. After simplification, it can be expressed as follows (5):

[0049]

[0050] At the same thickness, substituting the linear material attenuation coefficients μ corresponding to the amorphous selenium material layer and the silicon material layer at 1.487 keV respectively... Se μ Si The average energies WSe and WSi required to generate an electron-hole pair are calculated. It can be found that the X-ray conversion efficiency of amorphous selenium is 1.5 times that of silicon material at the same thickness. In other words, under the same thickness design and using soft X-rays of 1.487 keV, its signal intensity can be effectively improved by 50% compared with the common silicon material, which helps to improve the measurement resolution.

[0051] Please refer to Figure 3 , Figure 3 This application presents the actual measurement results and simulation results of high-order signals of a sample under test with a one-dimensional grating, measured using an X-ray detector with a silicon material layer in this embodiment. To evaluate reasonable signal quality conditions, this embodiment uses a 50nm thick silicon dioxide one-dimensional grating with a 139µm grating spacing as the sample under test (SP), and compares the high-order scattering signal obtained using the silicon material layer X-ray detector with the simulation results without considering the signal-to-noise ratio. Figure 3 In the figure, the horizontal axis represents the angle, the vertical axis represents the received signal strength, and the dashed line represents the high-order signal obtained under the same one-dimensional grating structure used in the simulation and experiment. The results show that for a single-layer 50nm thick silicon dioxide one-dimensional grating, without considering the influence of the signal-to-noise ratio, its high-order scattering spectrum is a signal with regularity and a period of 0.6 degrees.

[0052] On the other hand, the thick solid line represents the actual measurement results, and the signal-to-noise ratio (SNR) is evaluated simultaneously. Analysis of the actual measurement data shows that the SNR of the peak value of the first fringe and the peak value of the second fringe are both greater than 10 within 0.6 periods, while the SNR of the peak value of the third fringe is 6.96. When the SNR is less than 10, the fringe resolution is significantly reduced. Therefore, in subsequent analysis, the SNR should be greater than 10 to be considered to have a good signal resolution.

[0053] Figure 4 This is a graph showing the relationship between SNR and the intensity of backscattered or scattered signals in the actual analysis of this application embodiment. The detector used to collect the signal is mainly made of silicon. A fitting analysis was performed, and nonlinear fitting was conducted within the 99.7% confidence interval. The result shows that SNR and X-ray signal intensity have a nonlinear exponential polynomial relationship, and the formula obtained after fitting is shown below:

[0054] y = -1.53 ​​* 10 -27 x 6 +8*10 -43 x 5 -1.752*10 -16 x 4 +1.72*10 -11 x 3 -7.967*10 -7 x 2 +0.015x+36.372;

[0055] Where R 2 =0.961, indicating a high degree of confidence. The results show that the X-ray signal, whether reflected, scattered, or penetrated, is affected by the intensity of the X-rays received after hitting the sample structure, thus affecting the SNR. Therefore, it can be concluded that increasing the intensity of the X-ray signal received can effectively improve the signal resolution capability during measurement.

[0056] Figure 5 This is a simulation scatter plot comparing the effects of amorphous selenium and silicon material layers on SNR in embodiments of this application. Figure 5 The fitted relation y = -1.53 ​​* 10 -27 x 6 +8*10 -43 x 5 -1.752*10 -16 x 4 +1.72*10 -11 x 3 -7.967*10 -7 x 2From +0.015x+36.372, we can see that the signal strength needs to be greater than 200 (cps) for the SNR to have a chance of being greater than 10. Therefore, when using an X-ray detector mainly made of silicon, if the above conditions are substituted into random simulation, only 6.88% of the more than 3,500 random data points have an SNR greater than 10. In other words, only about 6.88% of the signals have good resolution.

[0057] In contrast, when the amorphous selenium material layer of this application embodiment is used as the X-ray conversion material layer 146 of the multi-dimensional X-ray detector 14, theoretical calculations show that the conversion efficiency is approximately 1.5 times greater than that of the silicon material layer. An SNR simulation scatter plot was performed using the same method and is shown below. Figure 5 Simulation results show that in the same set of over 3500 random data points, 55.64% of the SNR values ​​are greater than 10. This means that using an amorphous selenium material layer as the X-ray conversion material layer 146 of the multi-dimensional X-ray detector 14 can improve the measurement resolution by approximately 48.76%.

[0058] Beneficial effects of the embodiments

[0059] One of the advantages of this application is that the X-ray measurement system provided by this application can improve conversion efficiency and signal resolution by using a multi-dimensional X-ray detector with a direct light-gathering material (amorphous selenium material) in the structure. Through theoretical calculations, signal-to-noise ratio analysis, and actual measurement of the reflected high-order signal of the multi-dimensional grating structure at soft X-ray wavelengths, under the same material thickness and the same X-ray source energy, the conversion efficiency can be improved by about 1.5 times compared to existing X-ray detectors, and the signal resolution can also be improved by about 48.76%.

[0060] The embodiments and / or implementation methods described above are merely preferred embodiments and / or implementation methods for implementing the technology of this application, and are not intended to limit the implementation methods of the technology of this application in any way. Any person skilled in the art may make some modifications or alterations to other equivalent embodiments without departing from the scope of the technical means disclosed in this application, but these should still be regarded as the technology or embodiments that are substantially the same as those of this application.

Claims

1. An X-ray measurement system with high signal resolution, characterized in that, The X-ray measurement system with high signal resolution includes: An X-ray generator configured to generate an incident X-ray beam; An X-ray optical assembly for guiding the incident X-ray beam to a sample to be tested; A multi-dimensional X-ray detector is used to receive a measurement X-ray generated by the incident X-ray beam irradiating the sample under test, wherein the multi-dimensional X-ray detector includes: An insulating layer; Multiple first electrode layers are disposed on the insulating layer; A photodiode layer is disposed on the insulating layer; An X-ray conversion material layer, disposed on the photodiode layer and made of amorphous selenium; and A second electrode layer is disposed on the X-ray conversion material layer; and A processing device is connected to the multidimensional X-ray detector and configured to collect an X-ray signal to be measured generated by the multidimensional X-ray detector receiving the measured X-rays, and generate multiple measurement results corresponding to multiple structural parameters of the sample to be measured, wherein the multiple measurement results include multiple modal signals of different orders.

2. The high signal resolution X-ray measurement system according to claim 1, characterized in that, The photodiode layer includes: A first semiconductor layer, disposed on the insulating layer and having a first conductivity type; and A second semiconductor layer is disposed on the first semiconductor layer and has a second conductivity type.

3. The high signal resolution X-ray measurement system according to claim 2, wherein, The first semiconductor layer and the second semiconductor layer are respectively an N-type silicon layer and a P-type silicon layer.

4. The high signal resolution X-ray measurement system according to claim 2, characterized in that, The multidimensional X-ray detector also includes an electron blocking layer disposed between the second electrode layer and the X-ray conversion material layer.

5. The high signal resolution X-ray measurement system according to claim 4, characterized in that, The thickness of the X-ray conversion material layer is greater than 50 μm.

6. The high signal resolution X-ray measurement system according to claim 4, characterized in that, The plurality of first electrode layers are plurality of polycrystalline silicon electrode layers.

7. The high signal resolution X-ray measurement system according to claim 1, characterized in that, The process of collecting the X-ray signal to be tested and generating multiple measurement results corresponding to the sample to be tested includes obtaining multiple signal patterns within a predetermined angle range through the multi-dimensional X-ray detector, and extracting multiple modal signals of different orders for each signal pattern.

8. The high signal resolution X-ray measurement system according to claim 7, characterized in that, The high-signal-resolution X-ray measurement system also includes a multi-axis sample stage for carrying the sample to be measured.

9. The high signal resolution X-ray measurement system according to claim 8, characterized in that, The multi-axis sample stage has a stage moving mechanism and a stage rotating mechanism. The stage moving mechanism is used to move the sample to be tested along one or more of a first axis, a second axis and a third axis, and the stage rotating mechanism is used to rotate the sample to be tested around one or more of the first axis, the second axis and the third axis.

10. The high signal resolution X-ray measurement system according to claim 9, characterized in that, The multi-dimensional X-ray detector is mounted on an X-ray rotation mechanism so that the multi-dimensional X-ray detector rotates around the sample to be tested; The processing device is further configured to control the rotation of the X-ray rotation mechanism so that the multi-dimensional X-ray detector acquires multiple diffraction patterns within the predetermined angle range.

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