Gas uniformizing device and semiconductor equipment

Abstract

The embodiment of the utility model provides a gas uniformizing device and semiconductor equipment. The gas uniformizing device comprises a gas inlet channel; the first annular channel is communicated with the air inlet channel, and the radial size of the first annular channel is determined according to the distance between the first annular channel and the air inlet channel; the second annular channel is located in an area surrounded by the first annular channel, and the plane where the second annular channel is located is parallel to the plane where the first annular channel is located; the first ends of the connecting channels are communicated with the first annular channel, the second ends of the connecting channels are communicated with the second annular channel, the number of the connecting channels is multiple, and the multiple connecting channels are distributed in the circumferential direction of the second annular channel; the air outlet is communicated with the second annular channel, and the air outlet faces an area surrounded by the second annular channel. By adopting the technical scheme, the gas distribution uniformity in the reaction chamber can be improved.

Description

Technical Field

[0001] This specification relates to the field of semiconductor manufacturing technology, and in particular to a gas equalization device and semiconductor equipment. Background Technology

[0002] Semiconductor manufacturing typically involves multiple different processes, including some that utilize gases, such as deposition and etching. During these processes, the uniformity of gas flow rate and distribution is crucial for processing quality and directly impacts the yield of the semiconductor structure.

[0003] Against this backdrop, how to improve the uniformity of gas distribution within the reaction chamber has become a technical problem that urgently needs to be solved by those skilled in the art. Utility Model Content

[0004] In view of this, embodiments of this specification provide a gas equalization device and a semiconductor device that can improve the uniformity of gas distribution within a reaction chamber.

[0005] This specification provides an air distribution device, comprising: an air inlet channel; a first annular channel communicating with the air inlet channel, wherein the radial dimension of the first annular channel is determined based on the distance between the first annular channel and the air inlet channel; a second annular channel located within the area surrounded by the first annular channel, and the planes of the second annular channel and the first annular channel are parallel; a connecting channel, wherein a first end of the connecting channel is communicating with the first annular channel, and a second end of the connecting channel is communicating with the second annular channel, wherein there are multiple connecting channels distributed circumferentially along the second annular channel; and an air outlet communicating with the second annular channel and facing the area surrounded by the second annular channel.

[0006] Optionally, the radial dimension of the first annular channel satisfies at least one of the following:

[0007] As the distance between the first annular channel and the intake channel increases, the radial dimension of the first annular channel increases;

[0008] As the distance between the first annular channel and the intake channel increases, the radial dimension of the first annular channel increases, and the radial dimension of the second annular channel increases to a certain value and then stops changing.

[0009] Optionally, the radial dimension of the first annular channel is in the range of 2 mm to 10 mm.

[0010] Optionally, the gas equalization device further includes:

[0011] The main body has a first annular groove for forming the first annular channel and a second annular groove for forming the second annular channel.

[0012] A first end cap portion, the first end cap portion blocks the first opening of the first annular through groove to form the first annular channel, wherein the first opening faces a plane perpendicular to the plane where the first annular channel is located;

[0013] The second end cap seals the second opening of the second annular through groove to form the second annular channel, wherein the second opening faces a plane perpendicular to the plane containing the first annular channel.

[0014] Optionally, the bottom surface of the first annular through groove also has a first recess, the opening size of which is larger than the opening size of the first annular through groove.

[0015] Optionally, the bottom surface of the second annular through groove also has a second groove, the opening size of which is larger than the opening size of the second annular through groove.

[0016] Optionally, there are two first annular through slots, and the two first annular through slots are respectively disposed on the first end face and the second end face of the main body, wherein the first end face and the second end face are disposed opposite to each other.

[0017] The number of the second annular through grooves is two, and the two second annular through grooves are respectively disposed on the first end face and the second end face of the main body.

[0018] Optionally, the distance between the bottom of the first end cap and the bottom of the first annular groove ranges from 1.5 mm to 5 mm.

[0019] Optionally, the inner diameter of the connecting channels is not exactly the same, and the inner diameter of the connecting channels is determined according to the distance between the connecting channels and the air intake channels.

[0020] Optionally, the inner diameter of the connecting channel satisfies at least one of the following:

[0021] As the distance between the connecting channel and the intake channel increases, the inner diameter of the connecting channel increases.

[0022] As the distance between the connecting channel and the intake channel increases, the inner diameter of the connecting channel increases, and when the inner diameter of the connecting channel increases to a certain value, it no longer changes.

[0023] Optionally, the inner diameter of the connecting channel is in the range of 1.5 mm to 2.5 mm.

[0024] Optionally, the plurality of connecting channels are evenly distributed on the main body between the first annular channel and the second annular channel, and the inner diameter of the plurality of connecting channels is the same.

[0025] Optionally, the number of connection channels is 4 to 8.

[0026] Optionally, the gas equalization device further includes:

[0027] Multiple nozzle groups, the number of nozzle groups being the same as the number of air outlets, and multiple nozzles in one nozzle group being connected to a corresponding air outlet.

[0028] Accordingly, embodiments of this specification also provide a semiconductor device, including:

[0029] A stage for supporting a wafer;

[0030] As described in any of the preceding embodiments, the air outlet of the gas equalization device is oriented towards the platform.

[0031] Optionally, the semiconductor device is a chemical vapor deposition device.

[0032] Compared with the prior art, the technical solution of this utility model embodiment has the following advantages:

[0033] In the gas equalization device provided in the embodiments of this specification, the first annular channel is connected to the inlet channel and is connected to the second annular channel through a connecting channel. The second annular channel is connected to the outlet, thus enabling gas to be introduced into the reaction chamber. Furthermore, since the radial dimension of the first annular channel is determined according to the distance between the first annular channel and the inlet channel, the first annular channel has different radial dimensions, which improves the gas distribution on the first annular channel and makes the gas distribution at different positions of the first annular channel more uniform. Thus, when the gas is transmitted to the second annular channel through multiple connecting channels, the gas distribution at different positions of the second annular channel is more uniform, thereby improving the gas distribution uniformity within the reaction chamber. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of a gas equalization device;

[0035] Figure 2 This is a two-dimensional schematic diagram of the flatness of a wafer surface;

[0036] Figure 3 This is a schematic diagram of the first cross-sectional structure of a gas equalization device in an embodiment of this specification;

[0037] Figure 4This is a schematic diagram of a second cross-sectional structure of a gas equalization device in an embodiment of this specification;

[0038] Figure 5 This is a schematic diagram of the structure of a first annular channel in one of the embodiments of this specification;

[0039] Figure 6 This is a partial structural schematic diagram of a gas equalization device from a first perspective in an embodiment of this specification.

[0040] Figure 7 This is a partial structural schematic diagram of a gas equalization device from a second perspective in an embodiment of this specification. Detailed Implementation

[0041] In the following description, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of this invention. Therefore, the drawings and description are considered exemplary in nature and not restrictive.

[0042] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0043] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the stated features.

[0044] In the description of this utility model, "multiple" means two or more, unless otherwise explicitly specified. It should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows for mutual communication; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0045] In this invention, unless otherwise expressly specified and limited, "above" or "below" a second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of a second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" a second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature. The following disclosure provides many different embodiments or examples for implementing different structures of this invention. To simplify the disclosure of this invention, specific examples of components and arrangements are described below. Of course, these are merely examples and are not intended to limit the invention. Furthermore, reference numerals and / or reference letters may be repeated in different examples of this invention; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, this invention provides examples of various specific processes and materials, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0046] As described in the background art, the uniformity of gas flow rate and distribution is crucial to the processing quality, but in existing solutions, the thickness of the deposited film layer is inconsistent at different locations on the wafer surface during gas deposition.

[0047] For example, see Figure 1 and Figure 2 ,in, Figure 1 This is a schematic diagram of a gas equalization device. Figure 2 This is a two-dimensional schematic diagram of wafer surface flatness, specifically referring to the flatness achieved through... Figure 1 The thickness of the deposited film layer formed on the wafer surface after deposition processing in the gas homogenization device.

[0048] See Figure 1 The gas equalization device 10 includes a main body 12, with an air inlet 14 provided on the end face of the main body 12; a pre-equalization pipe 16 communicating with the air inlet 14; an equalization pipe 20 arranged circumferentially along the main body 12 and located within the area surrounded by the pre-equalization pipe 16; and a connecting channel 18 for connecting the equalization pipe 20 and the pre-equalization pipe 16 (wherein, Figure 1 The diagram illustrates two connecting channels 181 and 182.

[0049] When gas enters the pre-uniform gas pipe 16 through the inlet 14, the gas diffuses in the pre-uniform gas pipe 16 to transfer the gas in the pre-uniform gas pipe 16 to the uniform gas pipe 20 through the connecting channel 18, so that the uniform gas pipe 20 can deposit the gas onto the wafer surface.

[0050] In the actual process, the gas flow rate is relatively slow, and the amount of gas flowing into the processing chamber through the gas distribution pipe 20 is greatly affected by the pressure. Gases of the same molecular weight cannot be delivered to different areas of the chamber at the same time, resulting in the most gas flowing out at the connecting channel 18 with the highest pressure, while the amount of gas flowing out in other areas is less. This results in the deposition area corresponding to the connecting channel 18 having a thicker film layer.

[0051] For example, see Figure 2 The regions filled with different colors represent the thickness THK of the deposited film, where, along Figure 2 In the direction indicated by the middle arrow, the film thickness increases from the highest THK. H Change to the lowest THK L .

[0052] In one embodiment, Figure 2 The area A indicated by the dashed box is the deposition area corresponding to the connecting channel 181, and the area B is the deposition area corresponding to the connecting channel 182. The film thickness deposited in areas A and B can both be between 267.3 Å and 270.8 Å, while the film thickness deposited in other areas is concentrated between 250.2 Å and 257 Å. That is, the difference in film thickness between areas A and B and other areas is between 10.3 Å and 20.6 Å, which causes the film thickness non-uniformity problem on the wafer surface.

[0053] To improve the above problems, in another gas equalization device, more connecting channels are opened on the end face of the main body. However, gases of the same molecular weight still cannot be delivered to all areas of the chamber at the same time, and the closer to the connecting channel, the more gas flows out, and the problem of uneven film thickness still exists on the wafer surface.

[0054] To solve the above-mentioned technical problems, this specification provides an air distribution device, comprising: an air inlet channel; a first annular channel communicating with the air inlet channel, wherein the radial dimension of the first annular channel is determined according to the distance between the first annular channel and the air inlet channel; a second annular channel located within the area surrounded by the first annular channel, and the planes of the second annular channel and the first annular channel are parallel; a connecting channel, a first end of the connecting channel communicating with the first annular channel, and a second end of the connecting channel communicating with the second annular channel, wherein there are multiple connecting channels distributed circumferentially along the second annular channel; and an air outlet communicating with the second annular channel and facing the area surrounded by the second annular channel.

[0055] Using the gas equalization device provided in the embodiments of this specification, since the radial dimension of the first annular channel is determined according to the distance between the first annular channel and the gas inlet channel, the first annular channel has different radial dimensions, which improves the gas distribution on the first annular channel and makes the gas distribution at different positions of the first annular channel more uniform. Thus, when the gas is transmitted to the second annular channel through multiple connecting channels, the gas distribution at different positions of the second annular channel is more uniform, thereby improving the uniformity of gas distribution in the reaction chamber and thus improving the uniformity of the film thickness on the wafer surface.

[0056] To enable those skilled in the art to have a clearer understanding of the technical concepts, principles, advantages, etc. contained in the embodiments of this specification, a detailed description is provided below with reference to the accompanying drawings, through specific embodiments, and in conjunction with specific application scenarios.

[0057] See Figures 3 to 7 ,in, Figure 3 This is a schematic diagram of the first cross-sectional structure of a gas equalization device according to an embodiment of this specification. Figure 4 This is a schematic diagram of a second cross-sectional structure of a gas equalization device according to an embodiment of this specification. Figure 5 This is a schematic diagram of the structure of a first annular channel in one of the embodiments of this specification. Figure 6 This is a partial structural schematic diagram of a gas equalization device according to an embodiment of this specification, viewed from a first perspective. Figure 7 This is a partial structural schematic diagram of a gas equalization device from a second perspective in an embodiment of this specification.

[0058] See Figures 3 to 7 The gas equalization device 100 may include:

[0059] An intake channel 104; a first annular channel 106 communicating with the intake channel 104, wherein the radial dimension D of the first annular channel 106 is determined based on the distance between the first annular channel 106 and the intake channel 104; a second annular channel 108 located within the area surrounded by the first annular channel 106, and the planes of the second annular channel 108 and the first annular channel 106 are parallel; and a connecting channel 110, the first end of which is connected to the first annular channel 104. Channel 106 is connected, and the second end of the connecting channel 110 is connected to the second annular channel 108. The number of connecting channels 110 is multiple (as a non-limiting example, the gas equalization device 100 may include connecting channels 1101, 1102, 1103, 1104, 1105 and 1106), and the multiple connecting channels are distributed circumferentially along the second annular channel 108; air outlet 112 is connected to the second annular channel 108, and the air outlet 112 faces the area surrounded by the second annular channel 108.

[0060] The air intake channel 104 is used to provide an air passage for the air source to enter. By setting the air intake channel 104, the air source can be introduced into the reaction chamber.

[0061] In this embodiment, the number of air intake channels 104 can be one or more. When there are multiple air intake channels 104, different types of gas can be introduced into the reaction chamber through different air intake channels 104 to meet different process requirements; or one type of gas can be introduced simultaneously through multiple air intake channels 104 to reduce the ventilation time.

[0062] The first annular channel 106 serves as a pre-distribution channel to ensure that the gas source is evenly distributed circumferentially within the first annular channel 106, thereby reducing the difference in gas source quantity at different locations.

[0063] In this embodiment, the radial dimension D of the first annular channel 106 is determined based on the distance between the first annular channel 106 and the air intake channel 104, and the first annular channel 106 is in a through state, so that different regions of the first annular channel 106 have different distances from the air intake channel 104, and thus the first annular channel 106 can have different radial dimensions. This can improve the gas distribution on the first annular channel 106, making the gas distribution at different positions of the first annular channel 106 more uniform, thereby improving the uniformity of the film thickness on the wafer surface.

[0064] In this embodiment, based on different requirements, as the distance between the first annular channel 106 and the intake channel 104 increases, the radial dimension D of the first annular channel 106 satisfies at least one of the following:

[0065] Case 1: As the distance between the first annular channel 106 and the intake channel 104 increases, the radial dimension D of the first annular channel 106 increases.

[0066] In other words, the radial dimension D of the first annular channel 106 increases continuously, and the first annular channel 106 with the largest distance from the intake channel 104 has the largest radial dimension.

[0067] By continuously increasing the radial dimension D of the first annular channel 106, the air source velocity in the first annular channel 106, which is farther from the air intake channel 104, can be faster, increasing the air source flow rate at this location. Meanwhile, the air source velocity in the first annular channel 106, which is closer to the air intake channel 104, is slower, but the transmission time is shorter. Therefore, the difference in air source velocity at different locations within the first annular channel 106 can be reduced to compensate for the uneven film thickness caused by the difference in air source velocity, thereby improving the uniformity of film thickness.

[0068] Case 2: As the distance between the first annular channel 106 and the intake channel 104 increases, the radial dimension of the first annular channel 106 increases, and when the radial dimension of the first annular channel 106 increases to a certain value (i.e. a certain value or a preset value), it no longer changes.

[0069] In other words, the radial dimension D of the first annular channel 106 continues to increase, but when the radial dimension D of the first annular channel 106 increases to a certain value, the maximum radial dimension D no longer changes.

[0070] By increasing the maximum radial dimension D of the first annular channel 106 to a certain value, the air source flow velocity of the first annular channel 106, which is far from the air intake channel 104, can be made to be similar, thereby reducing the difference in film thickness.

[0071] It should be noted that the two cases listed in the above examples are only illustrative and are used to illustrate the effect of improving the gas source distribution by using a first annular channel with a variable diameter. They should not be construed as limiting the present invention. In actual applications, first annular channels with different size variations can be used.

[0072] For example, as the distance between the first annular channel and the intake channel increases, the radial dimension of the first annular channel exhibits a normal distribution. That is, the radial dimension of the first annular channel first increases and then decreases, with only some locations showing a larger radial dimension, while the radial dimensions at other locations are basically the same, thus reducing the manufacturing difficulty of the first annular channel.

[0073] In this embodiment, the radial dimension D of the first annular channel 106 is in the range of 2mm to 10mm. By making the radial dimension D of the first annular channel 106 greater than or equal to 2mm, the gas source can have a higher flow rate, reducing the time required for the gas source to be deposited on the wafer surface. And by making the radial dimension D of the first annular channel 106 less than or equal to 10mm, the amount of gas source in the first annular channel 106 furthest from the air inlet channel 104 can be avoided due to the radial dimension D of the first annular channel 106 being too large. This can improve the consistency of the gas source flow rate at different locations and reduce the overall size of the gas equalization device.

[0074] In this embodiment, see Figure 5 Based on the distance between the first annular channel 106 and the intake channel 104, the first annular channel 106 can be divided into three regions, each with a different radial dimension.

[0075] For example, assuming that region I is closest to the intake passage 104, region III is farthest from the intake passage 104, and region II is located between region I and region III, then the first radial dimension D1 of the first annular passage 106 in region I can be in the range of 2 mm to 3 mm, the second radial dimension D2 of the first annular passage 106 in region II can be in the range of 3 mm to 4 mm, and the third radial dimension D3 of the first annular passage 106 in region III can be in the range of 4 mm to 5 mm.

[0076] It should be noted that, Figure 5 The illustrated area division method and the radial dimensions of the first annular channel in each area are merely illustrative examples used to indicate that the radial dimensions of the first annular channel in different areas are different, and should not be construed as limiting the present invention.

[0077] In this embodiment, the gas equalization device 100 may further include a main body 102, in which a first annular groove for forming the first annular channel 106 is formed (as a non-limiting example, the main body 102 has first annular grooves 114 and 116); and a first end cap (as a non-limiting example, the first end caps 118 and 120), the first end caps blocking the first opening of the first annular groove (not shown in the figure) to form the first annular channel (as a non-limiting example, the first end cap 118 blocks the first annular groove 114 to form the first annular channel 106, and / or the first end cap 120 blocks the first annular groove 116 to form the first annular channel 106).

[0078] The first slot faces a plane perpendicular to the plane containing the first annular channel 106 (i.e., the first slot faces the bottom surface of the first end cap).

[0079] By using a first end cap and a first annular groove to form a first annular channel, the first end cap and the first annular groove can be manufactured separately, which can improve the manufacturing precision of the first end cap and the first annular groove. Moreover, this modular design makes it easier to assemble and disassemble, and facilitates cleaning, inspection and maintenance of the first annular groove.

[0080] In this embodiment, there are two first annular through slots (e.g., first annular through slots 114 and 116). The two first annular through slots are respectively disposed on the first end face (not shown) and the second end face (not shown) of the main body 102, wherein the first end face and the second end face are disposed opposite to each other.

[0081] In other words, the first annular grooves 114 and 116 are arranged in parallel along the direction perpendicular to the end face of the main body, thereby forming two first annular channels 106. In this way, different gas sources can be provided to the reaction chamber through the two first annular channels 106, thereby improving the versatility and application scenarios of the gas equalization device 100.

[0082] As an alternative example, when performing a high-density plasma chemical vapor deposition (HDP) process, one of the two first annular channels 106 can provide an active gas source (e.g., SiH4) to the reaction chamber, and the other first annular channel 106 can provide an ambient gas source (e.g., O2, Ar, etc.) to the reaction chamber.

[0083] It should be understood that, firstly, the above examples are not intended to limit the scope of protection of this utility model, but are merely illustrative. It is understood that, according to actual needs, more first annular grooves and first end caps adapted to the first annular grooves can be provided to form multiple (more than two) first annular channels; secondly, when multiple first annular channels are included, the gas equalization device is also provided with multiple air inlet channels that are paired with the multiple first annular channels. In other words, in one air intake process, one air inlet channel is only used for one type of air source. By setting multiple air inlet channels, multiple types of air sources can be supplied simultaneously in one air intake process.

[0084] In this embodiment, the bottom surface of the first annular through groove 114 also has a first groove (not shown in the figure). The opening size of the first groove is larger than the opening size of the first annular through groove 114. In this way, the first end cap 118 can be set in the first groove to block the first annular through groove 114, improve the sealing of the first annular channel 106, and prevent the air source from overflowing.

[0085] In practical applications, a single deposition process includes multiple deposition steps, and the initial flow rates of the gas source entering the first annular channel 106 through the air inlet channel 104 differ between each deposition step. Furthermore, the same gas source exhibits different flow patterns within the first annular channel 106 across different deposition steps. For gas sources with relatively low initial flow rates, insufficient pressure can prevent timely and uniform diffusion within the first annular channel 106, resulting in poor gas uniformity.

[0086] Based on this, in this embodiment, the distance between the bottom of the first end cap and the bottom of the first annular channel ranges from 1.5mm to 5mm. This reduces the cross-sectional area of ​​the first annular channel 106, allowing gas sources with different flow rates to be in the same medium flow, improving the uniformity of film thickness in different deposition steps of the same deposition process, and meeting the needs of different application scenarios.

[0087] It should be noted that the height values ​​between the bottom of the first end cap and the bottom of the first annular channel listed in the above examples are only illustrative and are used to indicate that by using a first annular channel with a smaller cross-sectional area, the flow pattern difference between air sources with different initial flow rates can be reduced, and should not be construed as a limitation of this utility model.

[0088] The second annular channel 108 serves to distribute gas, so as to uniformly transmit the gas source to the wafer surface.

[0089] In this embodiment, the second annular channel 108 is circumferentially arranged within the area enclosed by the first annular channel 106. This improves the gas uniformity of the second annular channel 108 and reduces the difference in film thickness between different areas of the wafer surface when the gas source is evenly distributed within the first annular channel 106.

[0090] In this embodiment, a second annular through groove for forming the second annular channel 108 is provided in the main body 102 (as a non-limiting example, the main body 102 is provided with second annular through grooves 122 and 124); a second end cap (as a non-limiting example, second end caps 126 and 128) is provided, which blocks the second opening of the second annular through groove (not shown in the figure) to form the second annular channel (as a non-limiting example, the second end cap 126 blocks the second annular through groove 122 to form the second annular channel 108, and / or the second end cap 128 blocks the second annular through groove 124 to form the second annular channel 108).

[0091] The second slot faces a plane perpendicular to the plane containing the second annular channel 108 (i.e., the second slot faces the bottom surface of the second end cap).

[0092] By using a second end cap and a second annular groove to form a second annular channel, the second end cap and the second annular groove can be manufactured separately, which can improve the manufacturing accuracy of the second end cap and the second annular groove. Moreover, this modular design makes it easier to assemble and disassemble, and facilitates cleaning, inspection and maintenance of the second annular groove.

[0093] In this embodiment, there are two second annular through slots (e.g., second annular through slots 122 and 124). The two second annular through slots are respectively disposed on the first end face (not shown) and the second end face (not shown) of the main body 102, wherein the first end face and the second end face are disposed opposite to each other.

[0094] In other words, the second annular grooves 122 and 124 are arranged in parallel along the direction perpendicular to the end face of the main body, thereby forming two second annular channels 108. In this way, different gas sources can be provided to the reaction chamber through the two second annular channels 108, thereby improving the versatility and application scenarios of the gas equalization device 100.

[0095] As an alternative example, when performing a high-density plasma chemical vapor deposition (HDP) process, one of the two second annular channels 108 can provide an active gas source (e.g., SiH4) to the reaction chamber, and the other second annular channel 108 can provide an ambient gas source (e.g., O2, Ar, etc.) to the reaction chamber.

[0096] It should be understood that, firstly, the above examples are not intended to limit the scope of protection of this utility model, but are merely illustrative. It is understood that, depending on actual needs, more second annular grooves and second end caps adapted to the second annular grooves can be provided to form multiple (more than 2) second annular channels; secondly, the number of second annular channels and the number of first annular channels should be consistent.

[0097] In this embodiment, the bottom surface of the second annular through groove 114 also has a second groove (not shown in the figure). The opening size of the second groove is larger than the opening size of the second annular through groove 122. In this way, the second end cap 126 can be set in the first groove to block the second annular through groove 122, improve the sealing of the second annular channel 108, and prevent the gas source from overflowing.

[0098] The connecting channel 110 serves to connect the first annular channel 106 and the second annular channel 108, so as to transfer the gas source in the first annular channel 106 to the second annular channel 108.

[0099] In this embodiment, the inner diameter d of the connecting channel 110 is not completely the same, and the inner diameter d of the connecting channel 110 is determined according to the distance between the connecting channel 110 and the air intake channel 104.

[0100] Since the connecting channels 110 in different regions have different distances from the air intake channels 104, the connecting channels 110 distributed between the first annular channel 106 and the second annular channel 108 can have different radial dimensions. This can improve the gas distribution entering the second annular channel 108 through the connecting channels 110, making the gas distribution at different positions in the second annular channel 108 more uniform, thereby further improving the problem of uneven film thickness on the wafer surface.

[0101] In this embodiment, based on different requirements, as the distance between the connecting channel 110 and the intake channel 104 increases, the inner diameter d of the connecting channel 110 satisfies at least one of the following:

[0102] Case 1: As the distance between the connecting channel 110 and the intake channel 104 increases, the inner diameter d of the connecting channel 110 increases.

[0103] In other words, the inner diameter d of the connecting channel 110 keeps increasing, and the inner diameter d of the connecting channel 110 with the largest distance from the intake channel 104 is the largest.

[0104] By continuously increasing the inner diameter d of the connecting channel 110, the air source flow rate of the connecting channel 110, which is farther from the air intake channel 104, can be faster, increasing the air source flow rate at that location. Meanwhile, the air source flow rate of the connecting channel 110, which is closer to the air intake channel 104, is slower, but the transmission time is shorter. Therefore, the difference in air source transmitted from the connecting channel 110 at different locations to the second annular channel 108 can be reduced, thereby further reducing the problem of uneven film thickness.

[0105] Case 2: As the distance between the connecting channel 110 and the intake channel 104 increases, the inner diameter d of the connecting channel 110 increases, and when the inner diameter d of the connecting channel 110 increases to a certain value (i.e. a certain value or a preset value), it no longer changes.

[0106] By increasing the inner diameter d of the connecting channel 110 to a certain value, the amount of air transmitted by the connecting channel 110 at different locations from the intake channel 104 can be made to be similar, thereby further reducing the difference in film thickness.

[0107] It should be noted that the two examples listed above are merely illustrative and are intended to illustrate the effect of improving the gas source distribution by using a connecting channel with a variable diameter. They should not be construed as limiting the present invention. In actual applications, connecting channels with different size variations can be used.

[0108] For example, as the distance between the connecting channel and the intake channel increases, the inner diameter of the connecting channel exhibits a normal distribution. In other words, the inner diameter of the connecting channel initially increases and then decreases, with only some locations having a larger inner diameter while other locations have a relatively consistent inner diameter, thus reducing the manufacturing difficulty of the connecting channel.

[0109] In this embodiment, the inner diameter d of the connecting channel 110 is within the range of 1.5mm to 2.5mm. By making the inner diameter d of the connecting channel 110 greater than or equal to 1.5mm, the gas source can have a higher flow rate, reducing the time required for the gas source to be deposited on the wafer surface. And by making the inner diameter d of the connecting channel 110 less than or equal to 2.5mm, the excessive amount of gas source transmitted by the connecting channel 110 furthest from the air inlet channel 104 due to the excessively large inner diameter d of the connecting channel 110 can be avoided, thereby improving the consistency of the gas source flow rate at different locations.

[0110] In this embodiment, based on the distance between the connecting channel 110 and the intake channel 104, the location of the connecting channel 110 can be divided into three regions (as a non-limiting example, the location of the connecting channel 110 can be divided according to the division method of the first annular channel 106), and the inner diameter of these three regions is different.

[0111] For example, the inner diameter d1 of the connecting channel 110 in region I can be in the range of 1.5 mm to 1.75 mm, the inner diameter d2 of the connecting channel 110 in region II can be in the range of 1.75 mm to 2 mm, and the inner diameter d3 of the connecting channel 110 in region III can be in the range of 2 mm to 2.5 mm.

[0112] It should be noted that the above examples illustrating the area division method and the inner diameter of the connecting channels in each area are merely illustrative examples used to indicate that the inner diameter of the connecting channels in different areas is different, and should not be construed as a limitation of this utility model.

[0113] In this embodiment, the number of connecting channels 110 is 4 to 8. By setting 4 to 8 connecting channels 110, there can be multiple air source transmission channels between the first annular channel 106 and the second annular channel 108, thereby dispersing the pressure at different positions between the first annular channel 106 and the second annular channel 108, so that the flow region of the air source at each position is consistent, thereby further reducing the difference between the film thicknesses.

[0114] In one alternative embodiment, the number of connection channels can be six, for example... Figure 4 The schematic connection channels are 1101, 1102, 1103, 1104, 1105 and 1106.

[0115] In some other embodiments, multiple connecting channels can be evenly distributed on the main body between the first annular channel and the second annular channel, and the inner diameter of the multiple connecting channels is the same. This is because using the first annular channel as described in the foregoing example already enables a relatively uniform gas distribution. This invention does not limit the inner diameter of the connecting channels.

[0116] The air outlet 112 is used to provide a channel for the air supply to enter the reaction chamber.

[0117] In this embodiment, there are multiple air outlets 112, and the multiple air outlets 112 are evenly arranged in the circumferential direction within the area surrounded by the second annular channel 108. This allows the air outlets to be directed toward the wafer, reducing the time required for gas to be deposited onto the wafer surface. Furthermore, the evenly arranged air outlets 112 ensure that the amount of gas output to different areas is basically the same, thereby improving the uniformity of the film thickness.

[0118] In this embodiment, see next. Figure 3 The air distribution device 100 may further include: a plurality of nozzle groups (as a non-limiting example, the plurality of nozzle groups include...) Figure 3 The number of nozzle groups (illustrated) is the same as the number of air outlets 112, and multiple nozzles in one nozzle group are connected to a corresponding air outlet 112.

[0119] By establishing a one-to-one correspondence between the nozzle group and the gas outlet 112, the gas in each gas outlet 112 can be sprayed onto the wafer surface through the nozzle group. Under the same conditions, the amount of gas sprayed by each nozzle in the nozzle group is basically the same. Thus, with the gas source evenly distributed in the second annular channel 108, the uniformity of the film thickness can be improved.

[0120] As a non-limiting example, a nozzle group may include three nozzles, with two of the three nozzles used to spray a first type of gas source and the other nozzle used to spray a second type of gas source, thereby meeting different deposition application scenarios.

[0121] It should be noted that, firstly, when simultaneously supplying the first type of gas source and the second type of gas source to the reaction chamber, the nozzles should be isolated from each other to avoid mixing between the two types of gas sources before they enter the reaction chamber; secondly, the three nozzles can spray only one type of gas source into the chamber.

[0122] It is understood that the above description provides multiple embodiment solutions, and the optional methods described in each embodiment solution can be combined and cross-referenced with each other without conflict, thereby extending to a variety of possible embodiment solutions, all of which can be considered as the embodiment solutions disclosed and made public in this specification.

[0123] This specification also provides semiconductor devices corresponding to the gas equalization devices described in any of the above embodiments, which are described below through specific examples.

[0124] It should be noted that the description of the semiconductor equipment below corresponds to the description of the gas equalization device above.

[0125] In this embodiment, the semiconductor device may include: a stage for supporting a wafer; and a gas equalization device as described in any of the preceding embodiments, wherein the gas outlet of the gas equalization device is directed toward the stage.

[0126] The specific structure and working principle of the gas equalization device can be found in the aforementioned example, and will not be described in detail here.

[0127] In this embodiment, the semiconductor device may further include a process chamber for housing a stage and a gas equalization device, wherein the gas equalization device is located above the stage.

[0128] In this embodiment, the semiconductor device can be a chemical vapor deposition device, which can perform various deposition processes on the wafer, such as high-density plasma chemical vapor deposition.

[0129] It is understandable that semiconductor equipment can also be other equipment that provides a gas source for wafers, such as dry etching equipment.

[0130] While the embodiments disclosed in this specification are as described above, the utility model is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of this utility model; therefore, the scope of protection of this utility model should be determined by the scope defined in the claims.

Claims

1. A gas equalization device, characterized in that, include: Air intake passage; A first annular channel is connected to the air intake channel, wherein the radial dimension of the first annular channel is determined based on the distance between the first annular channel and the air intake channel; The second annular channel is located within the area surrounded by the first annular channel, and the plane in which the second annular channel and the first annular channel are located is parallel. A connecting channel, wherein a first end of the connecting channel is connected to the first annular channel and a second end of the connecting channel is connected to the second annular channel, wherein there are multiple connecting channels, and the multiple connecting channels are distributed circumferentially along the second annular channel; An air outlet is connected to the second annular channel and faces the area surrounded by the second annular channel.

2. The gas equalization device according to claim 1, characterized in that, The radial dimension of the first annular channel satisfies at least one of the following: As the distance between the first annular channel and the intake channel increases, the radial dimension of the first annular channel increases; As the distance between the first annular channel and the intake channel increases, the radial dimension of the first annular channel increases, and the radial dimension of the second annular channel increases to a certain value and then stops changing.

3. The gas equalization device according to claim 1, characterized in that, The radial dimension of the first annular channel is in the range of 2 mm to 10 mm.

4. The gas equalization device according to claim 1, characterized in that, The gas equalization device further includes: The main body has a first annular groove for forming the first annular channel and a second annular groove for forming the second annular channel. A first end cap portion, the first end cap portion blocks the first opening of the first annular through groove to form the first annular channel, wherein the first opening faces a plane perpendicular to the plane where the first annular channel is located; The second end cap seals the second opening of the second annular through groove to form the second annular channel, wherein the second opening faces a plane perpendicular to the plane containing the first annular channel.

5. The gas equalization device according to claim 4, characterized in that, The bottom surface of the first annular through groove also has a first groove, the opening size of which is larger than the opening size of the first annular through groove.

6. The gas equalization device according to claim 4, characterized in that, The bottom surface of the second annular through groove also has a second groove, the opening size of which is larger than the opening size of the second annular through groove.

7. The gas equalization device according to claim 4, characterized in that, The number of the first annular through grooves is two, and the two first annular through grooves are respectively disposed on the first end face and the second end face of the main body, wherein the first end face and the second end face are arranged opposite to each other; The number of the second annular through grooves is two, and the two second annular through grooves are respectively disposed on the first end face and the second end face of the main body.

8. The gas equalization device according to claim 4, characterized in that, The distance between the bottom of the first end cap and the bottom of the first annular groove ranges from 1.5 mm to 5 mm.

9. The gas equalization device according to claim 1, characterized in that, The inner diameter of the connecting channels is not exactly the same, and the inner diameter of the connecting channels is determined according to the distance between the connecting channels and the air intake channels.

10. The gas equalization device according to claim 9, characterized in that, The inner diameter of the connecting channel satisfies at least one of the following: As the distance between the connecting channel and the intake channel increases, the inner diameter of the connecting channel increases. As the distance between the connecting channel and the intake channel increases, the inner diameter of the connecting channel increases, and when the inner diameter of the connecting channel increases to a certain value, it no longer changes.

11. The gas equalization device according to claim 9 or 10, characterized in that, The inner diameter of the connecting channel is in the range of 1.5mm to 2.5mm.

12. The gas equalization device according to claim 1, characterized in that, The multiple connecting channels are evenly distributed on the main body between the first annular channel and the second annular channel, and the multiple connecting channels have the same inner diameter.

13. The gas equalization device according to claim 1, characterized in that, The number of connection channels is 4 to 8.

14. The gas equalization device according to claim 1, characterized in that, Also includes: Multiple nozzle groups, the number of nozzle groups being the same as the number of air outlets, and multiple nozzles in one nozzle group being connected to a corresponding air outlet.

15. A semiconductor device, characterized in that, include: A stage for supporting a wafer; The gas equalization device according to any one of claims 1 to 14, wherein the gas outlet of the gas equalization device is oriented toward the platform.

16. The semiconductor device according to claim 15, characterized in that, The semiconductor device is a chemical vapor deposition device.

Images