LED chip
By setting an insulating layer and a thermally conductive metal layer in the LED chip, and using through holes for electrical connection and heat conduction, the problems of difficult and slow heat dissipation are solved, improving heat dissipation efficiency and extending the lifespan of the LED.
Patent Information
- Application Number
- CN202422742759.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-11
- Publication Date
- 2025-10-31
- Estimated Expiration
- 2034-11-11
AI Technical Summary
Existing LED chips suffer from heat dissipation problems, such as difficulty and slow heat dissipation, which affects their lifespan.
An insulating layer and a thermally conductive metal layer are set in the LED chip, and electrical connection is achieved through through holes. The thermally conductive metal layer is used to conduct heat and avoid heat accumulation.
It improves the heat dissipation efficiency of LED chips, prevents damage caused by excessive heat accumulation, and extends the lifespan of LEDs.
Smart Images
Figure CN223503334U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of light-emitting diode technology, and more particularly to an LED chip. Background Technology
[0002] With the advent of light-emitting diodes (LEDs), more and more industries have relied on LEDs for rapid development. Due to their advantages such as high luminous efficiency, long lifespan, environmental friendliness, and resource conservation, LEDs are currently widely used in lighting, displays, and many other fields.
[0003] Current LED chips generate heat while emitting light. If heat dissipation is not addressed promptly, it will severely impact the lifespan of the LED. Currently, heat dissipation for LEDs faces challenges such as difficulty and slowness. Utility Model Content
[0004] In view of this, this application provides an LED chip to solve the problems of difficult and slow heat dissipation of existing LEDs.
[0005] The embodiments of this utility model are implemented as follows:
[0006] An LED chip includes an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer stacked sequentially. A P-type electrode and an N-type electrode are disposed on the side of the P-type semiconductor layer away from the N-type semiconductor layer, with the P-type electrode and the N-type electrode spaced apart. The P-type electrode is electrically connected to the P-type semiconductor layer. A first insulating layer is disposed between the P-type semiconductor layer and the N-type electrode. A first through-hole is formed on the light-emitting layer, the P-type semiconductor layer, and the first insulating layer from the direction of the N-type semiconductor layer towards the N-type electrode. A second insulating layer is disposed on the inner wall of the first through-hole. A first thermally conductive metal layer is disposed on the side of the second insulating layer away from the wall of the first through-hole. The N-type semiconductor layer is electrically connected to the N-type electrode through the first thermally conductive metal layer.
[0007] The LED chip of this application, on the one hand, has a first insulating layer between the P-type semiconductor layer and the N-type electrode, which isolates the P-type semiconductor layer and the N-type electrode. On the other hand, a through-hole is formed in the light-emitting layer, the P-type semiconductor layer, and the first insulating layer, and a second insulating layer and a first thermally conductive metal layer are disposed within the first through-hole, so that the N-type semiconductor layer and the N-type electrode can be electrically connected through the first thermally conductive metal layer. The second insulating layer avoids the problem of the N-type semiconductor layer electrically connecting to the P-type semiconductor layer, which would affect the formation of the PN junction. At the same time, the heat generated inside the LED chip can be dissipated to the outside through the first through-hole, preventing excessive heat accumulation inside the LED and thus avoiding damage to the LED chip.
[0008] In one possible implementation, a third insulating layer is provided between the P-type semiconductor layer and the P-type electrode, the first insulating layer is connected to the third insulating layer, the third insulating layer has a second through hole, the second through hole has a second thermally conductive metal layer, and the P-type semiconductor layer is electrically connected to the P-type electrode through the second thermally conductive metal layer.
[0009] In one possible implementation, the first insulating layer, the second insulating layer, and the third insulating layer comprise one or more of an aluminum nitride layer, a diamond-like carbon film layer, or a Bragg reflector layer.
[0010] In one possible implementation, the diameter of the second through hole is larger than the diameter of the first through hole.
[0011] In one possible implementation, the diameter of the first or second through hole ranges from 10 μm to 100 μm.
[0012] In one possible implementation, an ohmic contact layer is provided between the P-type semiconductor layer and the first insulating layer, and between the P-type semiconductor layer and the third insulating layer. The first via penetrates the ohmic contact layer, and the ohmic contact layer is used to electrically connect the P-type semiconductor layer and the second thermally conductive metal layer.
[0013] In one possible implementation, a current spreading layer is provided between the P-type semiconductor layer and the first insulating layer, and between the P-type semiconductor layer and the third insulating layer. The first via penetrates the current spreading layer, and the current spreading layer is used to spread the current between the P-type semiconductor layer and the P-type electrode.
[0014] In one possible implementation, along the length of the P-type semiconductor layer, a fourth insulating layer is provided at opposite ends of the P-type semiconductor layer, the fourth insulating layer being used to isolate the P-type semiconductor layer from external components; and / or along the width of the P-type semiconductor layer, a fourth insulating layer is provided at opposite ends of the P-type semiconductor layer, the fourth insulating layer being used to isolate the P-type semiconductor layer from external components.
[0015] In one possible implementation, the P-type semiconductor layer includes a P-type cladding layer, a P-type gallium nitride layer, and a P-type contact layer stacked sequentially. The P-type contact layer is located on the side of the P-type gallium nitride layer away from the N-type semiconductor layer and is electrically connected to the P-type electrode. The P-type cladding layer is located on the side of the P-type gallium nitride layer closer to the N-type semiconductor layer and is electrically connected to the light-emitting layer.
[0016] In one possible implementation, a substrate and a buffer layer are provided on the side of the N-type semiconductor layer away from the P-type semiconductor layer, the buffer layer being located between the substrate and the N-type semiconductor layer.
[0017] The LED chip of this application, on the one hand, has a first insulating layer between the P-type semiconductor layer and the N-type electrode to prevent the N-type electrode from electrically connecting to the P-type semiconductor layer, thus affecting the function of the N-type electrode. Simultaneously, a first through-hole is formed in the P-type semiconductor layer, the light-emitting layer, and the first insulating layer. A second insulating layer and a first thermally conductive metal layer are formed within the first through-hole, allowing the N-type electrode to electrically connect to the N-type semiconductor layer through the first thermally conductive metal layer, thereby realizing the negative electrode function of the N-type electrode. The second insulating layer is used to isolate the N-type semiconductor layer and the P-type semiconductor layer, preventing interference with the formation of the PN junction. On the other hand, a third insulating layer is formed between the P-type semiconductor layer and the P-type electrode, and a second thermally conductive metal layer is formed within a second through-hole in the third insulating layer, allowing the P-type semiconductor layer to electrically connect to the P-type electrode through the second thermally conductive metal layer, thereby realizing the positive electrode function of the P-type electrode. Furthermore, the first and second through-holes can also dissipate heat generated inside the LED chip, preventing excessive heat accumulation inside the LED chip and thus preventing damage to the LED chip. Attached Figure Description
[0018] To more clearly illustrate the technical solutions of the embodiments of this utility model, the accompanying drawings in the embodiments will be briefly described below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 This is a schematic diagram of the structure of an LED chip according to an embodiment of the present invention.
[0020] Figure 2 for Figure 1 A top view of the first and second vias formed on the ohmic contact layer or current spreading layer of the LED chip.
[0021] Figure 3 This is a schematic diagram of another structure of an LED chip according to an embodiment of the present invention.
[0022] Explanation of key component symbols:
[0023] LED chip, 100, 200; substrate, 10; buffer layer, 20; N-type semiconductor layer, 30; light-emitting layer, 40; P-type semiconductor layer, 50; P-type cladding layer, 51; P-type gallium nitride layer, 52; P-type contact layer, 53; P-type electrode, 61; N-type electrode, 62; first insulating layer, 71; second insulating layer, 72; third insulating layer, 73; fourth insulating layer, 74; first through-hole, 81; second through-hole, 82; first thermally conductive metal layer, 91; second thermally conductive metal layer, 92; ohmic contact layer, 93; current spreading layer, 94.
[0024] The following detailed description, in conjunction with the accompanying drawings, will further illustrate this application. Detailed Implementation
[0025] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments.
[0026] It should be noted that when a component is said to be "fixed to" another component, it can be directly on the other component or there may be an intervening component. When a component is said to be "connected to" another component, it can be directly connected to the other component or there may be an intervening component. When a component is said to be "set on" another component, it can be directly set on the other component or there may be an intervening component. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.
[0027] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "or / and" as used herein includes any and all combinations of one or more of the associated listed items.
[0028] Some embodiments of this utility model are described in detail below. Unless otherwise specified, the following embodiments and features can be combined with each other.
[0029] See Figure 1 This embodiment provides an LED chip 100. In this embodiment, the LED chip 100 has a flip-chip structure.
[0030] Specifically, the LED chip 100 includes an N-type semiconductor layer 30, a light-emitting layer 40, and a P-type semiconductor layer 50 stacked sequentially. Both the N-type semiconductor layer 30 and the P-type semiconductor layer 50 are electrically connected to the light-emitting layer 40, so that electrons are transferred through the light-emitting layer 40 and then combine with holes to generate light. The light-emitting layer 40 can be a single quantum well structure or a multi-layer quantum well structure. A P-type electrode 61 and an N-type electrode 62 are provided on the side of the P-type semiconductor layer 50 away from the N-type semiconductor layer 30. The P-type electrode 61 and the N-type electrode 62 are spaced apart. The P-type electrode 61 is electrically connected to the P-type semiconductor layer 50. A first insulating layer 71 is provided between the P-type semiconductor layer 50 and the N-type electrode 62. A through-hole 81 is formed in the light-emitting layer 40, the P-type semiconductor layer 50, and the first insulating layer 71 from the direction of the N-type semiconductor layer 30 towards the N-type electrode 62. A second insulating layer 72 is provided on the inner wall of the first through-hole 81. A first thermally conductive metal layer 91 is provided on the side of the second insulating layer 72 away from the hole wall of the first through-hole 81. The N-type semiconductor layer 30 is electrically connected to the N-type electrode 62 through the first thermally conductive metal layer 91. In this embodiment, the N-type semiconductor layer 30 is an N-type gallium nitride layer. The shape of the first through-hole 81 can be circular, triangular, polygonal, or other irregular shapes. The number of first through-holes 81 can be one or more. When the number of first through-holes 81 is multiple, please refer to... Figure 2 As shown, depending on the actual design requirements, the multiple first through holes 81 can be arranged in a row, in a square, etc. This application does not limit the arrangement of the multiple first through holes 81.
[0031] In the LED chip 100, on the one hand, a first insulating layer 71 is provided between the P-type semiconductor layer 50 and the N-type electrode 62, which isolates the P-type semiconductor layer 50 and the N-type electrode 62. On the other hand, a first through-hole 81 is formed in the light-emitting layer 40, the P-type semiconductor layer, and the first insulating layer 71, and a second insulating layer 72 and a first thermally conductive metal layer 91 are provided in the first through-hole 81, so that the N-type semiconductor layer 30 and the N-type electrode 62 can be electrically connected through the first thermally conductive metal layer 91. The provision of the second insulating layer 72 avoids the problem of the N-type semiconductor layer 30 being electrically connected to the P-type semiconductor layer 50, which would affect the formation of the PN junction. At the same time, the heat generated inside the LED chip 100 can also be dissipated to the outside through the first through-hole 81, avoiding excessive heat accumulation inside the LED and damage to the LED chip 100. Furthermore, the light generated by the LED chip 100 can also pass through the first through-hole 81 and be emitted to the outside.
[0032] In some embodiments, a third insulating layer 73 is provided between the P-type semiconductor layer 50 and the P-type electrode 61. The first insulating layer 71 is connected to the third insulating layer 73. The third insulating layer 73 has a second through-hole 82. A second thermally conductive metal layer 92 is provided in the second through-hole 82, and the P-type semiconductor layer 50 is electrically connected to the P-type electrode 61 through the second thermally conductive metal layer 92.
[0033] In this embodiment, the heat generated between the P-type semiconductor layer 50 and the P-type electrode 61 can be dissipated to the outside through the second through-hole 82, thereby improving the heat dissipation efficiency of the LED chip 100. The materials of the first thermally conductive metal layer 91 and the second thermally conductive metal layer 92 include copper or aluminum. Using copper or aluminum for the first thermally conductive metal layer 91 and the second thermally conductive metal layer 92 not only has better heat conduction performance, but also reduces the production cost of the LED chip 100.
[0034] It should be noted that the materials of the first thermally conductive metal layer 91 and the second thermally conductive metal layer 92 can be the same or different. That is, the materials of the first thermally conductive metal layer 91 and the second thermally conductive metal layer 92 can both be copper or both be aluminum. Alternatively, the material of the first thermally conductive metal layer 91 can be copper, and the material of the second thermally conductive metal layer 92 can be aluminum. Or, the material of the first thermally conductive metal layer 91 can be aluminum, and the material of the second thermally conductive metal layer 92 can be copper. In other embodiments, the materials of the first thermally conductive metal layer 91 and the second thermally conductive metal layer 92 can also be other thermally conductive metal materials besides copper and aluminum.
[0035] In some embodiments, the first insulating layer 71, the second insulating layer 72, and the third insulating layer 73 comprise one or more of an aluminum nitride layer, a diamond-like carbon (DLC) film layer, or a Bragg reflective layer. In this embodiment, the first insulating layer 71, the second insulating layer 72, and the third insulating layer 73 may all be the same, partially the same, or all different. For example, the first insulating layer 71, the second insulating layer 72, and the third insulating layer 73 may all be any one of an aluminum nitride layer, a DLC film layer, and a Bragg reflective layer. Alternatively, the first insulating layer 71 may be an aluminum nitride layer, and the second insulating layer 72 and the third insulating layer 73 may be a DLC film layer or a Bragg reflective layer. This application is not limited in this respect.
[0036] When the first insulating layer 71, the second insulating layer 72, or the third insulating layer 73 is a Bragg reflective layer, its reflectivity is as high as 99% or more. This first insulating layer 71, the second insulating layer 72, or the third insulating layer 73 not only avoids the light absorption problem present in metallic reflective structures, but also allows the bandgap position to be adjusted by changing the refractive index or thickness of the material, thereby expanding the application range of this application.
[0037] In some embodiments, the diameter of the second through-hole 82 is larger than the diameter of the first through-hole 81. The diameter of the first through-hole 81 or the second through-hole 82 ranges from 10 μm to 100 μm. In this embodiment, the diameter of the second through-hole 82 is set to be larger than the diameter of the first through-hole 81. On the one hand, the area of the second thermally conductive metal layer 92 is increased, so that the P-type electrode 61 is electrically connected to the P-type semiconductor layer 50 through the second thermally conductive metal layer 92. On the other hand, the light inside the LED chip 100 can pass through the first through-hole 81 and the second through-hole 82, so that the LED chip 100 has a good light-emitting effect. Furthermore, the heat dissipation path between the P-type semiconductor layer 50 and the P-type electrode 61 is increased. At the same time, in order to improve the heat dissipation efficiency between the P-type semiconductor layer 50 and the N-type electrode 62, multiple first through-holes 81 can be opened, thereby increasing the area of the first thermally conductive metal layer 91 and expanding the heat dissipation path between the P-type semiconductor layer 50 and the N-type electrode 62. In this way, the heat dissipation efficiency of the LED chip 100 is improved.
[0038] Specifically, the diameter of the first through-hole 81 can be 20 μm, 30 μm, 50 μm, 60 μm, etc. The cross-section of the second through-hole 82 can be circular or square. For example... Figure 2 As shown, the cross-section of the second through hole 82 is rectangular, and the length of the second through hole 82 can be 70 μm, 80 μm, 90 μm, etc. It is sufficient to ensure that the diameter of the second through hole 82 is greater than the diameter of the first through hole 81.
[0039] In some embodiments, ohmic contact layers 93 are provided between the P-type semiconductor layer 50 and the first insulating layer 71, and between the P-type semiconductor layer 50 and the third insulating layer 73. A first via 81 penetrates the ohmic contact layer 93. The ohmic contact layer 93 is used for electrical connection between the P-type semiconductor layer 50 and the second thermally conductive metal layer 92. The ohmic contact layer 93 may be an ITO layer.
[0040] Please combine Figure 1 The first insulating layer 71 connects to the third insulating layer 73. That is, the first insulating layer 71 and the third insulating layer 73 are located on the side of the P-type semiconductor layer 50 away from the N-type semiconductor layer 30, and the P-type electrode 61 and the N-type electrode 62 are located on the side of the first insulating layer 71 and the third insulating layer 73 away from the N-type semiconductor layer 30. The ohmic contact layer 93 is located on the side of the first insulating layer 71 and the third insulating layer 73 closer to the N-type semiconductor layer 30. A through-hole 81 is formed in the light-emitting layer 40, the P-type semiconductor layer 50, the ohmic contact layer 93, and the third insulating layer 73. Along the length of the P-type semiconductor layer 50, the cross-sectional area of the first through-hole 81 is smaller than the area of the third insulating layer 73. Please refer to... Figure 2 Multiple first through holes 81 are formed at one end of the P-type semiconductor layer 50 where the N-type electrode 62 is located. This allows the heat generated between the N-type semiconductor layer 30, the P-type semiconductor layer 50, and the N-type electrode 62 to be dissipated to the outside through the multiple first through holes 81.
[0041] In other embodiments, a current spreading layer 94 is provided between the P-type semiconductor layer 50 and the first insulating layer 71, and between the P-type semiconductor layer 50 and the third insulating layer 73. A first via 81 penetrates the current spreading layer 94. The current spreading layer 94 is used to spread the current between the P-type semiconductor layer 50 and the P-type electrode 61.
[0042] In some embodiments, a fourth insulating layer 74 is provided at opposite ends of the P-type semiconductor layer 50 along its length. The fourth insulating layer 74 is used to isolate the P-type semiconductor layer 50 from external components. In this embodiment, the material of the fourth insulating layer 74 is the same as the material of the first insulating layer 71.
[0043] In another embodiment, a fourth insulating layer 74 is provided at opposite ends of the P-type semiconductor layer 50 in the width direction of the P-type semiconductor layer 50. The fourth insulating layer 74 is used to isolate the P-type semiconductor layer 50 from external components.
[0044] In some embodiments, the P-type semiconductor layer 50 includes a P-type cladding layer 51, a P-type gallium nitride layer 52, and a P-type contact layer 53 stacked sequentially. The P-type contact layer 53 is located on the side of the P-type gallium nitride layer 52 away from the N-type semiconductor layer 30, and is electrically connected to the P-type electrode 61. The P-type contact layer 53 can provide good electrical contact to reduce contact resistance, improve current transmission efficiency, and protect the P-type gallium nitride layer 52. The P-type cladding layer 51 is located on the side of the P-type gallium nitride layer 52 closer to the N-type semiconductor layer 30, and is electrically connected to the light-emitting layer 40. The P-type cladding layer 51 can uniformly distribute current and protect the P-type gallium nitride layer 52.
[0045] The LED chip 100 of this application, on the one hand, has a first insulating layer 71 disposed between the P-type semiconductor layer 50 and the N-type electrode 62 to prevent the N-type electrode 62 from electrically connecting to the P-type semiconductor layer 50, thus avoiding affecting the function of the N-type electrode 62. Simultaneously, a first through-hole 81 is formed in the P-type semiconductor layer 50, the light-emitting layer 40, and the first insulating layer 71. A second insulating layer 72 and a first thermally conductive metal layer 91 are disposed within the first through-hole 81, allowing the N-type electrode 62 to electrically connect to the N-type semiconductor layer 30 through the first thermally conductive metal layer 91, thereby realizing the negative electrode function of the N-type electrode 62. The second insulating layer 72 is used to isolate the N-type semiconductor layer 30 and the P-type semiconductor layer 50, preventing interference with the formation of the PN junction. On the other hand, a third insulating layer 73 is disposed between the P-type semiconductor layer 50 and the P-type electrode 61, and a second thermally conductive metal layer 92 is disposed within the second through-hole 82 formed in the third insulating layer 73, so that the P-type semiconductor layer 50 is electrically connected to the P-type electrode 61 through the second thermally conductive metal layer 92, thereby realizing the positive electrode function of the P-type electrode 61. Furthermore, the first through-hole 81 and the second through-hole 82 can also dissipate the heat generated inside the LED chip 100, preventing excessive heat accumulation inside the LED chip 100 and thus preventing damage to the LED chip 100. Moreover, the light generated by the LED chip 100 can pass through the first through-hole 81 and the second through-hole 82, thereby improving the luminous efficiency of the LED chip 100.
[0046] like Figure 3As shown, this application also provides an LED chip 200. The LED chip 200 includes a substrate 10, a buffer layer 20, an N-type semiconductor layer 30, a light-emitting layer 40, and a P-type semiconductor layer 50 stacked sequentially. A P-type electrode 61 and an N-type electrode 62 are provided on the side of the P-type semiconductor layer 50 away from the N-type semiconductor layer 30. The P-type electrode 61 and the N-type electrode 62 are spaced apart, and the P-type electrode 61 is electrically connected to the P-type semiconductor layer 50. A first insulating layer 71 is provided between the P-type semiconductor layer 50 and the N-type electrode 62. A through-hole 81 is formed on the light-emitting layer 40, the P-type semiconductor layer 50, and the first insulating layer 71 from the direction of the N-type semiconductor layer 30 near the N-type electrode 62. A second insulating layer 72 is provided on the inner wall of the first through-hole 81, and a first thermally conductive metal layer 91 is provided on the side of the second insulating layer 72 away from the hole wall of the first through-hole 81. The N-type semiconductor layer 30 is electrically connected to the N-type electrode 62 through the first thermally conductive metal layer 91. In this embodiment, the substrate 10 is made of sapphire. The buffer layer 20 is made of aluminum nitride, gallium nitride, or aluminum gallium nitride.
[0047] Compared to LED chip 100, LED chip 200 has the same structure as LED chip 100, except that a substrate 10 and a buffer layer 20 are disposed on the side of the N-type semiconductor layer 30 away from the N-type electrode 62. Furthermore, the technical effects of LED chip 200 are the same as those of LED chip 100. Further details are omitted here.
[0048] The above embodiments are only used to illustrate the technical solution of this utility model and are not intended to limit it. Although this utility model has been described in detail with reference to the above preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions to the technical solution of this utility model should not depart from the spirit and scope of the technical solution of this utility model.
Claims
1. An LED chip, comprising an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer stacked sequentially, wherein a P-type electrode and an N-type electrode are disposed on the side of the P-type semiconductor layer away from the N-type semiconductor layer, the P-type electrode and the N-type electrode are spaced apart, and the P-type electrode is electrically connected to the P-type semiconductor layer, characterized in that, A first insulating layer is provided between the P-type semiconductor layer and the N-type electrode. A first through hole is formed on the light-emitting layer, the P-type semiconductor layer and the first insulating layer from the direction of the N-type semiconductor layer near the N-type electrode. A second insulating layer is provided on the inner wall of the first through hole. A first thermally conductive metal layer is provided on the side of the second insulating layer away from the hole wall of the first through hole. The N-type semiconductor layer is electrically connected to the N-type electrode through the first thermally conductive metal layer.
2. The LED chip as described in claim 1, characterized in that, A third insulating layer is provided between the P-type semiconductor layer and the P-type electrode. The first insulating layer is connected to the third insulating layer. The third insulating layer has a second through-hole. A second thermally conductive metal layer is provided in the second through-hole. The P-type semiconductor layer is electrically connected to the P-type electrode through the second thermally conductive metal layer.
3. The LED chip as described in claim 2, characterized in that, The first insulating layer, the second insulating layer, and the third insulating layer comprise one or more of aluminum nitride, diamond-like carbon film, or Bragg reflective layer.
4. The LED chip as described in claim 2, characterized in that, The diameter of the second through hole is larger than the diameter of the first through hole.
5. The LED chip as described in claim 4, characterized in that, The diameter of the first or second through hole ranges from 10 μm to 100 μm.
6. The LED chip as described in claim 2, characterized in that, An ohmic contact layer is provided between the P-type semiconductor layer and the first insulating layer, and between the P-type semiconductor layer and the third insulating layer. The first via penetrates the ohmic contact layer, and the ohmic contact layer is used to electrically connect the P-type semiconductor layer and the second thermally conductive metal layer.
7. The LED chip as described in claim 2, characterized in that, A current spreading layer is provided between the P-type semiconductor layer and the first insulating layer, and between the P-type semiconductor layer and the third insulating layer. The first via penetrates the current spreading layer, and the current spreading layer is used to spread the current between the P-type semiconductor layer and the P-type electrode.
8. The LED chip as described in claim 1, characterized in that, Along the length of the P-type semiconductor layer, a fourth insulating layer is provided at opposite ends of the P-type semiconductor layer, and the fourth insulating layer is used to isolate the P-type semiconductor layer from external components; and / or In the width direction of the P-type semiconductor layer, a fourth insulating layer is provided at opposite ends of the P-type semiconductor layer, and the fourth insulating layer is used to isolate the P-type semiconductor layer from external components.
9. The LED chip as described in claim 1, characterized in that, The P-type semiconductor layer includes a P-type cladding layer, a P-type gallium nitride layer, and a P-type contact layer stacked sequentially. The P-type contact layer is located on the side of the P-type gallium nitride layer away from the N-type semiconductor layer and is electrically connected to the P-type electrode. The P-type cladding layer is located on the side of the P-type gallium nitride layer closer to the N-type semiconductor layer and is electrically connected to the light-emitting layer.
10. The LED chip as described in claim 1, characterized in that, A substrate and a buffer layer are provided on the side of the N-type semiconductor layer away from the P-type semiconductor layer, and the buffer layer is located between the substrate and the N-type semiconductor layer.