High-temperature heating furnace
By dividing the high-temperature heating furnace into multiple heating zones along its long axis and employing independent temperature control devices and PID algorithms, the problem of uneven temperature near the furnace door was solved, thereby achieving uniformity of the reaction on the silicon wafer surface and improving performance.
Patent Information
- Application Number
- CN202422711186.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-07
- Publication Date
- 2025-11-07
- Estimated Expiration
- 2034-11-07
AI Technical Summary
Existing high-temperature heating furnaces are subject to significant thermal shock in the temperature zone near the furnace door, causing the temperature to drop too quickly, resulting in uneven reaction on the silicon wafer surface and affecting the silicon wafer performance.
The furnace body is divided into multiple heating zones along its long axis. The zone near the furnace opening is shorter than the middle zone. Independent temperature control devices and temperature detectors are installed, and precise temperature control is achieved through a PID algorithm.
It improves the temperature uniformity inside the furnace, enhances the uniformity of silicon wafer reaction, and improves the performance of silicon wafers.
Smart Images
Figure CN223525552U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to photovoltaic cell production technical field, especially, relate to a high temperature heating furnace. BACKGROUND
[0009] Photovoltaic cell production needs to go through multiple processes, including diffusion, annealing and surface plating and other high temperature processes, which are important steps to realize cell structure manufacturing and function, and require high temperature and high pressure for the process environment of silicon wafer, and the heating furnace body is the place where the silicon wafer reacts, which is an important core equipment for manufacturing photovoltaic cells. When the silicon wafer is diffused, annealed and surface plated in the heating furnace body, the temperature of the silicon wafer is required to be as uniform as possible, and the heating furnace body is the heat source for the silicon wafer reaction, so the winding and temperature zone layout of the furnace wire in the heating furnace body are particularly important.
[0010] At present, in the process of furnace body design and manufacture, in order to ensure the uniformity of the internal thermal field, the temperature zones are usually distributed at equal intervals along the length direction of the furnace body. However, in the actual production process, due to the need to open the furnace door to load the silicon wafer, the temperature zones near the furnace door are greatly affected by the thermal shock, and the temperature drops too fast, and the influence degree of the temperature between different temperature zones near the furnace door and different positions in the same temperature zone is quite different, and each temperature zone only sets a temperature probe at the middle position of the temperature zone, so the measured temperature value cannot reflect the true situation of the temperature unevenness in different areas of the temperature zone, which is the same in the process of temperature rising and falling. When the silicon wafer travels into the furnace body, the temperature of the silicon wafer before and after is quite different due to the uneven temperature distribution in different areas of the furnace body, which makes the surface reaction of the silicon wafer uneven, and has adverse effects on the performance of the silicon wafer.
[0011] Therefore, it is urgent to improve the temperature zone setting and size of the heating furnace body, set smaller control length for the areas with large temperature influence degree difference, reduce the temperature unevenness between different temperature zones and in the temperature zone, realize accurate temperature control, and make the silicon wafer reaction more uniform. INVENTION CONTENTS
[0012] In view of the above-mentioned shortcomings of the prior art, the purpose of the utility model is to provide a high temperature heating furnace, which is used to solve the problem that the temperature of the silicon wafer before and after is quite different due to the uneven temperature distribution in different areas of the furnace body when the silicon wafer travels into the furnace body, which makes the surface reaction of the silicon wafer uneven, and has adverse effects on the performance of the silicon wafer.
[0013] To solve the above-mentioned problems, the technical scheme adopted by the utility model is:
[0014] The high temperature heating furnace described in the application has the following characteristics:
[0015] A furnace body having a furnace mouth and a furnace tail away from each other, the furnace mouth being provided with an inlet and outlet port communicating with a furnace cavity, the inlet and outlet port being provided with a furnace door openably; the furnace cavity of the furnace body is divided into a plurality of heating areas along the long axis direction of the high-temperature heating furnace, the length of the heating area adjacent to the furnace mouth being equal to or less than the length of the remaining heating areas, the length of the heating area referring to the length of the heating area along the long axis direction of the high-temperature heating furnace; and / or
[0009] A temperature control device provided on the furnace body for independently controlling the temperature of each heating area in the furnace body.
[0010] As preferred in the present application, the length of the heating area adjacent to the furnace mouth is less than the length of the remaining heating areas.
[0011] As preferred in the present application, in addition to the heating area adjacent to the furnace mouth, in each two adjacent heating areas, the length of the heating area close to the furnace mouth is equal to or less than the length of the heating area close to the middle of the furnace body.
[0012] As preferred in the present application, the temperature control device comprises:
[0013] A plurality of heating devices provided on the furnace body for heating silicon wafers in the furnace cavity, at least one set of heating devices being configured for each heating area;
[0014] A temperature controller provided on the furnace body and connected with the heating device, at least one set of temperature controllers being configured for each heating area, for receiving temperature regulation instructions of the heating control mechanism to control the action of the electric heater;
[0015] A plurality of temperature detectors provided on the furnace body and connected with the heating control mechanism, at least one set of temperature detectors being configured for each heating area, for transmitting the actual temperature of the heating area monitored in real time to the heating control mechanism; and / or
[0016] A heating control mechanism provided outside the furnace body and connected with the temperature detector and the temperature controller, for receiving temperature data monitored by the temperature detector and controlling the state of the temperature controller.
[0017] As preferred in the present application, the heating device is an electric heater, the heating device comprising a furnace wire, the furnace wire being arranged in each heating area, and the furnace wire being electrically connected with an external power supply and the temperature controller.
[0018] As preferred in the present application, the outer wall of the furnace body of each heating area is wound with the furnace wire. The winding mode of the furnace wire can be serpentine, spiral, etc.
[0019] As preferred in the present application, in different length heating areas, the wire diameter and / or wiring density of the furnace wire are different.
[0020] As preferred in the present application, in the heating zones of different lengths, the wire diameter and / or wiring density of the heating wire gradually decreases as the length of the heating zone gradually increases.
[0021] As preferred in the present application, the wire diameter of the heating wire is between 1-10 mm.
[0022] As preferred in the present application, the number of the heating zones is 4-12.
[0023] As preferred in the present application, the number of the heating zones is 6-8.
[0024] As preferred in the present application, the number of the heating zones is 6 or 8.
[0025] As preferred in the present application, the outer wall of the furnace body or the wall of the control box is further provided with temperature data display screens corresponding to the heating zones, which are connected with the temperature detectors and used for displaying the temperature values and variation trends of the heating zones.
[0026] The furnace body is divided into several independent heating zones of different lengths along the long axis, the heating zones do not interfere with each other and can be controlled independently, the lengths of the heating zones near the furnace door and the furnace tail are smaller than the lengths of the heating zones near the middle of the furnace body according to the difference in the temperature influence degree, the heating wire of the heating zone near the furnace door is arranged more densely and controlled with a smaller length, the temperature distribution of the heating zone is more uniform, and the influence on the adjacent temperature zones is smaller during the temperature rising and falling, so that the temperature in the furnace body near the furnace door can be controlled more effectively, the lengths of the temperature zones near the middle of the furnace body which are adjacent to the temperature zones are arranged to be larger along the direction of the long axis of the furnace body, the temperature zones at the middle position are the main positions for the reaction of the silicon wafer, the length of the temperature zones at the middle position is arranged to be the largest, the temperature distribution uniformity of the temperature zones can be improved, and the reaction effect of the silicon wafer can be improved.
[0027] Compared with the prior art, the present application has the beneficial effects that: the temperature distribution uniformity of the furnace body and the reaction uniformity of the silicon wafer are improved by improving the setting and distribution of the temperature zones in the furnace body, and the temperature control of the temperature zones near the furnace door and the furnace tail is accurate. BRIEF DESCRIPTION OF DRAWINGS
[0028] Figure 1 The structure diagram of the high-temperature heating furnace is described for an embodiment of the present application.
[0029] Figure 2 The heating zone division schematic diagram of the furnace cavity of the high-temperature heating furnace is described for an embodiment of the present application.
[0030] Figure 3A-A sectional view of the high-temperature heating furnace.
[0031] Figure 4 A-A sectional view of the high-temperature heating furnace.
[0032] Figure 5 A-A sectional view of the high-temperature heating furnace.
[0033] Figure 6 A-A sectional view of the high-temperature heating furnace. Figure 5 A-A sectional view of the high-temperature heating furnace.
[0034] Figure 7 A-A sectional view of the high-temperature heating furnace. Figure 5 A-A sectional view of the high-temperature heating furnace.
[0035] Figure 8 A-A sectional view of the high-temperature heating furnace.
[0036] BRIEF DESCRIPTION OF DRAWINGS
[0037] 1- furnace body; 11- furnace mouth; 12- furnace tail; 13- heating area; 131- first heating area; 132- second heating area; 133- third heating area; 134- fourth heating area; 135- fifth heating area; 136- sixth heating area; 1301- heating area one; 1302- heating area two; 1303- heating area three; 1304- heating area four; 1305- heating area five; 1306- heating area six; 1307- heating area seven; 1308- heating area eight; 14- detection hole;
[0038] 2- heating device; 21- heating wire;
[0039] 3- temperature detector;
[0040] 4- temperature controller;
[0041] 5- heating control mechanism;
[0042] 6- temperature data display screen;
[0043] 7- alarm;
[0044] 8- control box;
[0045] 9- protective cover. DETAILED DESCRIPTION
[0046] Following, the embodiments of the present application will be described in detail by specific examples, and other advantages and effects of the present application can be easily understood by those skilled in the art from the disclosure of this specification. The present application can also be implemented or applied by other different specific embodiments, and various modifications or changes can be made to the details in this specification based on different views and applications without departing from the spirit of the present application.
[0047] It should be noted that the process equipment or device not specifically mentioned in the following examples is the conventional equipment or device in the art.
[0048] In addition, it should be understood that the one or more method steps mentioned in the present application do not exclude that there can be other method steps before and after the combination steps or other method steps can be inserted between the explicitly mentioned steps, unless otherwise specified; it should also be understood that the combination connection relationship between the one or more devices / apparatuses mentioned in the present application does not exclude that there can be other devices / apparatuses before and after the combination devices / apparatuses or other devices / apparatuses can be inserted between the two explicitly mentioned devices / apparatuses, unless otherwise specified. Moreover, unless otherwise specified, the numbering of each method step is only a convenient tool to identify each method step, and is not intended to limit the arrangement order of each method step or to limit the scope of the present application, and the change or adjustment of the relative relationship, without substantial change of the technical content, is also regarded as the scope of the present application.
[0049] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, in which the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as a limitation of the present application.
[0050] In the description of the present application, it should be understood that the terms "upper", "lower", "left", "right", "inner", "outer", "axial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application. In addition, the features defined as "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.
[0051] In the description of the present application, it is necessary to point out that, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting" should be understood in a broad sense, for example, can be fixed connection, can also be detachable connection, or integrally connected, can be mechanical connection, can also be electrical connection, can be directly connected, can also be indirectly connected through an intermediate medium, can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0052] In the description of the present application, the description of the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the exemplary description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.
[0053] The present application will be further described below in conjunction with specific embodiments, but the protection scope of the present application is not limited thereto.
[0054] As shown in Figures 1-8 , the present application is based on a photovoltaic cell heating control method to build a high-temperature heating furnace, comprising:
[0055] The furnace body 1 has a furnace mouth and a furnace tail away from each other, the furnace mouth is provided with a feeding and discharging port communicating with the furnace cavity, and the feeding and discharging port is provided with a furnace door 11 which can be opened and closed. The furnace cavity of the furnace body 1 is divided into a plurality of heating areas 13 along the long axis direction of the high-temperature heating furnace, the length of the heating area 13 adjacent to the furnace mouth is equal to or less than that of the remaining heating areas 13, and the length of the heating area 13 refers to the length of the heating area 13 along the long axis direction of the high-temperature heating furnace; and / or
[0056] The temperature control device is arranged on the furnace body 1 for independently controlling the temperature of each heating area 13 in the furnace body 1.
[0057] As shown in Figure 1 and Figure 5 , the length of the heating area 13 adjacent to the furnace mouth is less than that of the remaining heating areas 13.
[0058] As shown in the figure, except for the heating area 13 adjacent to the furnace mouth, in every two adjacent heating areas 13, the length of the heating area 13 close to the furnace mouth is equal to or less than that of the heating area 13 close to the middle of the furnace body 1.
[0059] In some embodiments of the present application, the temperature control device comprises:
[0060] A plurality of heating devices 2 are arranged in the furnace body 1 for heating the silicon wafer in the furnace cavity, and each heating area is provided with a set of heating devices 2;
[0061] A plurality of temperature controllers 4 are arranged in the furnace body 1 and connected with the heating devices 2, and each heating area is provided with a set of temperature controllers 4 for receiving the temperature control instructions of the heating control mechanism to control the action of the electric heater;
[0062] A plurality of temperature detectors 3 are arranged in the furnace body 1 and connected with the heating control mechanism, and each heating area is provided with a set of temperature detectors 3 for transmitting the actual temperature of the heating area monitored in real time to the heating control mechanism; and / or
[0063] The heating control mechanism 5 is arranged outside the furnace body 1 and connected with the temperature detector 3 and the temperature controller 4, and is used for receiving the temperature data monitored by the temperature detector and controlling the state of the temperature controller.
[0064] In some embodiments of the present application, the heating device 2 is an electric heater, and the heating device 2 comprises a furnace wire 21, the furnace wire 21 is arranged in each heating area, and the furnace wire 21 is electrically connected with an external power supply and a temperature controller 4. The heating device 2 in the present application is not limited to an electric heater, but can also be other heating devices that can independently heat the heating area.
[0065] In some embodiments of the present application, a door body that can be opened and closed can be additionally arranged between adjacent heating areas. The communication or isolation between the heating areas is controlled by controlling the opening and closing of the door body, and then the size of the furnace cavity and the number of heating areas are quickly adjusted. If it is necessary to reduce the furnace cavity space of the furnace body, one or more door bodies near the tail of the furnace body can be selectively closed, so that the number of heating areas in the high-temperature heating furnace in the long axis direction of the furnace cavity is reduced, and the actual space of the furnace body for heating the silicon wafer is reduced. The device can flexibly adjust the size of the furnace cavity according to the number of silicon wafers processed, save energy, and avoid unnecessary waste.
[0066] As shown in Figure 1 and Figure 5 The length of the heating area divided by the furnace cavity in the whole high-temperature heating furnace is not completely the same, the length of the heating area near the furnace door is small, the length of the heating area near the middle of the furnace body is greater than that of the heating area near the furnace door, and each heating area is externally connected with a power supply and a temperature controller, so that the temperature of each heating area can be independently controlled to ensure the uniformity of the overall temperature of the silicon wafer in the furnace cavity.
[0067] As shown in Figure 1 and Figure 5As shown, several heating areas 13 are arranged near the furnace mouth 11, and the lengths of the heating areas are shorter than the length of the heating area near the middle of the furnace body. The heating areas near the furnace mouth are individually controlled, and the lengths of the heating areas are equal to each other or gradually increase from outside to inside along the long axis direction of the high-temperature heating furnace, but are smaller than the length of the heating area near the middle position. Since the temperature zones near the middle position are the main positions for the reaction of the silicon wafer, the length of the temperature zones near the middle position is set to be the maximum, so that the temperature distribution uniformity of the temperature zones can be improved, and the reaction effect of the silicon wafer can be improved.
[0068] In some embodiments of the present application, the number of heating areas is 4-12.
[0069] In some embodiments of the present application, the number of heating areas is 6-8.
[0070] In some embodiments of the present application, the number of heating areas is 6 or 8.
[0071] In some embodiments of the present application, the furnace body of each heating area is wound with the furnace wire. The furnace wire can be wound in a uniform manner or in a non-uniform manner, and the winding manner of the furnace wire can be a serpentine shape, a spiral shape or a combined winding manner.
[0072] In some embodiments of the present application, in the heating areas 13 with different lengths, the wire diameter and / or the wiring density of the furnace wire 21 are different.
[0073] In some embodiments of the present application, in the heating areas with different lengths, as the length of the heating area gradually increases, the wire diameter and / or the wiring density of the furnace wire gradually decrease.
[0074] In some embodiments of the present application, the wire diameter of the furnace wire is between 1-10 mm.
[0075] As shown in the drawings, Figure 1 As shown, the outer side wall of the furnace body 1 is further provided with a temperature data display screen 6 corresponding to each heating area, and the temperature data display screen 6 is connected with a temperature detector and used for displaying the temperature value and the change trend of the heating area.
[0076] Specifically, as shown in the drawings, Figures 1-7As shown in the embodiment, the furnace cavity of the furnace body of the high-temperature heating furnace is divided into six heating areas 13 along the axial direction, and the heating areas 13 are sequentially the first heating area 131, the second heating area 132, the third heating area 133, the fourth heating area 134, the fifth heating area 135, and the sixth heating area 136 from the furnace mouth to the furnace tail. Each heating area is separately connected to a power source, and the temperature of each heating area can be independently controlled to ensure the uniformity of the overall temperature of the silicon wafer in the furnace. According to actual needs, the number of heating areas can be more or less than the number shown in the figure, for example, 4-12. In this embodiment, the lengths of different heating areas are different. The lengths of the first heating area 131, the second heating area 132, and the third heating area 133 gradually increase along the long axis direction of the high-temperature heating furnace. The length of the first heating area near the furnace mouth is the smallest, which is to set the area with large temperature difference to a smaller control length, so that the temperature difference in this area is smaller, the temperature distribution is more uniform, and the temperature detector can reflect the true situation in the temperature zone, thereby facilitating accurate control of temperature rise and fall.
[0077] As shown in the embodiment, Figure 4 As shown in the embodiment, the furnace body of the high-temperature heating furnace is divided into eight heating areas 13 along the axial direction, and the heating areas 13 are sequentially the first heating area 1301, the second heating area 1302, the third heating area 1303, the fourth heating area 1304, the fifth heating area 1305, the sixth heating area 1306, the seventh heating area 1307, and the eighth heating area 1308 from the furnace mouth to the furnace tail. Each heating area is separately connected to a power source, and the temperature of each heating area can be independently controlled to ensure the uniformity of the overall temperature of the silicon wafer in the furnace. Among them, three heating areas with the same length are arranged near the furnace mouth, namely the first heating area 1301, the second heating area 1302, and the third heating area 1303. The lengths of these three heating areas are all smaller than the lengths of the heating areas near the middle of the furnace body, that is, the lengths of the first heating area 1301, the second heating area 1302, and the third heating area 1303 are all smaller than the lengths of the fifth heating area 1305 and the sixth heating area 1306. It should be noted that the three equal-length heating areas are only for illustration, and other numbers can also be set. As shown in the figure, one narrow heating area is arranged near the furnace mouth, which can control the temperature more accurately. However, the temperature influence degree of adjacent heating areas may still be large, so more than one narrow heating area is needed to reduce the temperature influence degree near the furnace mouth, so that the temperature difference between adjacent temperature zones is smaller, and the temperature inside the furnace body is more uniform.
[0078] In other embodiments, the lengths of the three heating areas can also not be completely equal, for example, the lengths of the three heating areas gradually increase towards the middle of the furnace body. This is because the farther away from the furnace mouth, the smaller the temperature influence degree difference, and the corresponding control length can be increased.
[0079] AsFigure 3 As shown, each heating zone 13 is provided with uniformly arranged heating wires 21 along the outer side of the furnace body. The heating wires 21 are arranged in a ring along the circumference of the furnace body 1, or in a serpentine pattern. The distribution density and / or wire diameter of the heating wires in different heating zones are different, and the wire diameter is between 1 and 10 mm.
[0080] Furthermore, the wire diameter in the densely distributed heating zone of the heating wires 21 is larger than that in the sparsely distributed heating zone. The heating zone near the furnace opening can be relatively dense or shorter in length, allowing for more precise control; the illustration only shows cases with different lengths. The inner heating zone with a longer wire diameter exhibits less temperature variation and smaller internal temperature differences, allowing for the use of sparsely distributed heating wires with smaller diameters. In other embodiments, the wire diameter and the spacing of the distribution density can be specifically set as needed.
[0081] In some embodiments of this utility model, a wiring area (not shown in the figure) is provided on the outer side wall of the furnace body 1. The heating wire 21 is electrically connected to an external power supply and a temperature controller through several terminals in the wiring area to realize independent control of the electric heater.
[0082] In some embodiments of this utility model, each heating zone 13 is equipped with an independent temperature controller 4. The temperature controller 4 is an electronic control device with multiple independent channels. The temperature controller 4 is externally connected to a heating control mechanism 5. The heating control mechanism 5 analyzes and precisely controls the temperature in the heating zone 13 through a PID algorithm, so as to independently adjust the power distribution of the heating wire in the heating zone 13 when it is working, that is, it can control the partial or complete on / off of the heating wire in the temperature zone.
[0083] like Figure 1 As shown, multiple control boxes 8 are also provided on the outer wall of the furnace body 1. Each heating zone is equipped with one control box 8. Each control box integrates and installs a set of the temperature detector 3 and the temperature controller 4, thereby protecting the temperature detector 3 and the temperature controller 4.
[0084] In addition, a temperature data display screen 6 is installed on the outer wall of the furnace body 1 or the wall of the control box 8. The temperature data display screen corresponds to each heating zone. The temperature data display screen 6 is connected to the temperature detector 3. The temperature detector 3 can be a temperature testing instrument. The temperature detection probe of the temperature testing instrument can be inserted into the corresponding heating zone through the detection hole 14 on the furnace body, so as to monitor and display the temperature value and change trend of the heating zone in real time. When there is a problem, it can quickly track which heating zone has a problem, which facilitates the inspection and replacement of the heating element and saves maintenance costs and time.
[0085] In some embodiments of this utility model, the heating control mechanism 5 is provided with a protective cover 9.
[0086] In some embodiments of the utility model, the outer side wall of the furnace body 1 is equipped with alarm 7, alarm 7 is electrically connected with heating control mechanism 5. Specifically, the alarm is a buzzer, once there is a problem in one or several heating areas, the alarm can ring, thereby playing a warning role.
[0087] The photovoltaic cell heating control method provided in the application is used for high-temperature heating of a silicon wafer and comprises the following steps:
[0088] S1, based on the furnace cavity size parameters of the high-temperature heating furnace and the heating temperature and temperature control precision in the high-temperature heating process of the photovoltaic cell, the furnace cavity of the high-temperature heating furnace is divided into a plurality of heating areas along the long axis direction of the high-temperature heating furnace in turn;
[0089] S2, an independent electric heater, temperature detector and temperature controller are arranged in each heating area;
[0090] S3, the temperature detector continuously collects the actual temperature data of the corresponding heating area at the current detection time point at a preset time interval and transmits the actual temperature data to the heating control mechanism in real time;
[0091] S4, the heating control mechanism analyzes and processes the temperature of each heating area through a PID algorithm and generates a temperature control instruction recognizable by each temperature controller; the temperature control instruction is used to instruct the temperature controller to control the electric heater to perform corresponding operations;
[0092] S5, the temperature controller controls the heating power of the heating wire in the corresponding heating area according to the temperature control instruction to control the temperature of each heating area independently.
[0093] In some embodiments of the utility model, the electric heater needs to select the wire diameter, wiring mode and wiring density of the heating wire according to the temperature control precision and the furnace cavity size parameters in the high-temperature heating process of the photovoltaic cell.
[0094] In some embodiments of the utility model, the direction close to the end of the high-temperature heating furnace in the long axis direction of the high-temperature heating furnace is defined as outward, and vice versa; in the two adjacent heating areas, the length of the heating area on the outside is equal to or less than the length of the heating area on the inside.
[0095] In some embodiments of the utility model, in the two adjacent heating areas, the length of the heating area on the outside is less than the length of the heating area on the inside, that is, the length of the two adjacent heating areas gradually increases from the outside to the inside along the long axis direction of the high-temperature heating furnace.
[0096] The step of analyzing and processing the temperature of each heating area by the heating control mechanism through a PID algorithm comprises the following steps:
[0097] S41 collecting real-time temperature of each heating area in the high-temperature heating furnace by the temperature detector as the input of the feedback link of the system;
[0098] S42 presetting working temperature of each heating area of the high-temperature heating furnace, area temperature control threshold of the same heating area and inter-area temperature control threshold between adjacent heating areas by the heating control mechanism as the input of the system;
[0099] S43 calculating temperature deviation, real-time temperature deviation of the same heating area and real-time temperature deviation between adjacent heating areas according to the preset working temperature and the real-time temperature fed back by the system, correcting heating power data of the furnace wire in each heating area by the PID algorithm and generating temperature control instruction recognizable by the temperature controller according to the corrected heating power data by the heating control mechanism;
[0100] S44 re-controlling heating power of the furnace wire according to the corrected heating power data and accurately controlling temperature of each heating area by the temperature controller.
[0101] The above embodiments are used to illustrate the embodiments disclosed by the utility model, and cannot be understood as the limitation of the utility model. In addition, various modifications listed in this paper and changes of the method and composition in the utility model are obvious to those skilled in the art without departing from the scope and spirit of the utility model. Although the utility model has been specifically described in combination with various specific preferred embodiments of the utility model, it should be understood that the utility model should not be limited to these specific embodiments. In fact, various modifications obvious to those skilled in the art as described above to obtain the utility model should be included in the scope of the utility model.
Claims
1. A high temperature heating furnace characterized by, The application relates to a high-temperature heating furnace. The furnace body (1) is provided with a furnace opening and a furnace tail, the furnace opening is provided with an inlet and outlet port communicating with a furnace cavity, the inlet and outlet port is provided with a furnace door (11) which can be opened and closed, the furnace cavity of the furnace body (1) is divided into a plurality of heating areas (13) along the long axis direction of the high-temperature heating furnace, the length of the heating area (13) adjacent to the furnace opening is equal to or smaller than the length of the remaining heating areas (13), and the length of the heating area (13) refers to the length of the heating area (13) along the long axis direction of the high-temperature heating furnace; and / or The temperature control device is arranged on the furnace body (1) and is used for independently controlling the temperature of each heating area (13) in the furnace body (1).
2. The high-temperature heating furnace of claim 1, wherein: The length of the heating area (13) adjacent to the furnace opening is smaller than the length of the remaining heating areas (13).
3. The high-temperature heating furnace of claim 2, wherein: Except for the heating area (13) adjacent to the furnace opening, in each two adjacent heating areas (13), the length of the heating area (13) close to the furnace opening is equal to or smaller than the length of the heating area (13) close to the middle part of the furnace body (1).
4. The high-temperature heating furnace according to any one of claims 1 to 3, characterized in that, The temperature control device comprises: A plurality of heating devices (2) arranged on the furnace body (1), at least one set of heating devices is arranged in each heating area; A temperature controller (4) arranged in the heating area (13) and connected with the heating device, at least one set of temperature controllers (4) is arranged in each heating area; A plurality of temperature detectors (3) arranged on the furnace body (1), at least one set of temperature detectors (3) is arranged in each heating area; and / or A heating control mechanism (5) arranged outside the furnace body (1) and connected with the temperature detector (3) and the temperature controller (4).
5. The high temperature heating furnace of claim 4, wherein: The heating device is an electric heater, the heating device comprises a furnace wire (21), the furnace wire is arranged in each heating area (13), and the furnace wire (21) is electrically connected with an external power supply and the temperature controller (4).
6. The high-temperature heating furnace of claim 5, wherein: The furnace wire (21) is wound on the outer wall of the furnace body (1) of each heating area (13), and in different length heating areas (13), the wire diameter and / or the wiring density of the furnace wire (21) are different.
7. The high-temperature heating furnace of claim 5, wherein: The wire diameter of the furnace wire is between 1-10 mm.
8. The high-temperature heating furnace of claim 1, wherein: The number of the heating areas is 4-12.