Four-end laminated solar cell, photovoltaic module and electric equipment

Abstract

The utility model discloses a four-end laminated solar cell, a photovoltaic assembly and an electric device, the four-end laminated solar cell comprises a top cell and a bottom cell, and an up-conversion luminescent layer is arranged between the top cell and the bottom cell. The four-end laminated solar cell can reduce the adverse effect of ultraviolet light on the perovskite material, gains the light absorption and conversion of the laminated cell in visible light and near infrared bands, has wide spectrum utilization range and high light absorption and conversion efficiency, reduces the Br content in the perovskite of the top cell and the Sn content in the perovskite of the bottom cell, and improves the light absorption and conversion efficiency. Therefore, the stability of the battery is improved and the overall performance is excellent.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of batteries, in particular to a four-terminal laminated solar cell, a photovoltaic module and an electrical equipment. BACKGROUND

[0002] The four-terminal laminated solar cell is not limited by the current of the series-connected sub-cell, has lower performance decay under non-AM1.5G working conditions, but needs more TCO film layers, thereby bringing more parasitic absorption. In addition, in order to expand the spectral utilization range as much as possible, the active layer of the top cell of the laminated solar cell usually satisfies a band gap ≥1.65eV, and the active layer of the bottom cell needs a band gap of about 1.2eV, which makes the top cell perovskite need to contain a high proportion of Br to form a mixed halogen wide band gap, and the high-Br-content mixed halogen perovskite material has a photo-induced phase segregation problem, affecting the working stability of the device; the bottom cell perovskite needs to contain a high proportion of Sn to form a Sn-Pb mixed narrow band gap perovskite, and Sn 2+ is easily oxidized to Sn 4+ Therefore, the perovskite material with high Sn content also has a stability problem. In addition, related research shows that ultraviolet light with a wavelength ≤400nm can promote ion migration in the perovskite film, causing degradation of the perovskite material, and thus causing performance decay of the cell.

[0003] Currently, the method for solving the problems of improving the efficiency and stability of the 4T full perovskite laminated solar cell is usually to use a bulk phase additive to improve the film quality or use a modification layer to passivate interface defects and optimize the energy level matching, which can improve the performance of the laminated device to a certain extent, but cannot fundamentally solve the inevitable phase segregation and easy oxidation problems of the material itself. UTILITY MODEL CONTENT

[0004] The utility model aims to solve at least one of the technical problems in the related art to some extent. To this end, one object of the utility model is to provide a four-terminal laminated solar cell, a photovoltaic module and an electrical equipment, the four-terminal laminated solar cell can reduce the adverse effects of ultraviolet light on perovskite materials, increase the light absorption and conversion of the laminated cell in the visible light and near-infrared waveband, has a wide spectral utilization range, high light absorption and conversion efficiency, reduce the Br content in the perovskite of the top cell and the Sn content in the perovskite of the bottom cell, thereby improving the stability of the cell, and can replace different up-conversion luminescent layers according to different light working conditions to realize optimal utilization of different spectra, and has excellent overall performance.

[0005] In a first aspect of the utility model, the utility model provides a four-terminal laminated solar cell, which comprises: a top cell and a bottom cell, and an up-conversion luminescent layer is arranged between the top cell and the bottom cell.

[0006] The utility model discloses a four-terminal laminated solar cell, the top cell and bottom cell are provided with the up-conversion luminescent layer, and the up-conversion luminescent layer is used for converting long-wave infrared light in the part light of the top cell into visible light, enhances the light absorption and conversion of the bottom cell in the visible light and near infrared wave band, the spectral utilization range is wide, the light absorption and conversion efficiency are high, improves the stability of the cell, simultaneously according to the different working condition of illumination, can replace different up-conversion luminescent layer, to realize the light utilization optimization to different spectrum, and the overall performance is excellent.

[0007] In some embodiments, the material of the up-conversion luminescent layer is one of a rare earth element-doped halide, a rare earth element-doped silicate, a rare earth element-doped tungstate, and a rare earth element-doped phosphate.

[0008] In some embodiments, the excitation wavelength of the up-conversion luminescent layer is not less than 800 nm; and / or,

[0009] The emission wavelength of the up-conversion luminescent layer is 400 nm to 800 nm; and / or,

[0010] The thickness of the up-conversion luminescent layer is 50 nm to 500 nm.

[0011] In some embodiments, the light-incident surface of the top cell is provided with a down-conversion luminescent layer.

[0012] In some embodiments, the material of the down-conversion luminescent layer is a down-conversion luminescent quantum dot and / or a down-conversion fluorescent powder; and / or,

[0013] The excitation wavelength of the down-conversion luminescent layer is not greater than 400 nm; and / or,

[0014] The emission wavelength of the down-conversion luminescent layer is 400 nm to 800 nm.

[0015] In some embodiments, the top cell is a perovskite top cell or an organic solar top cell.

[0016] In some embodiments, the top cell is a perovskite top cell, and along the light-incident direction, the perovskite top cell comprises, in sequence, a first transparent conductive substrate, a first charge transport layer, a first perovskite active layer, a second charge transport layer, a first buffer layer, and a first transparent conductive layer.

[0017] One of the first charge transport layer and the second charge transport layer is an electron transport layer, and the other is a hole transport layer.

[0018] The first transparent conductive substrate is provided with a first metal electrode on one side.

[0019] The first transparent conductive layer is provided with a second metal electrode on one side.

[0020] In some embodiments, the bottom cell is one of a crystalline silicon bottom cell, a perovskite bottom cell, a cadmium telluride bottom cell, a copper indium gallium selenide bottom cell, and a gallium arsenide bottom cell.

[0021] In some embodiments, the bottom cell is a perovskite bottom cell, and along the light incident direction, the perovskite bottom cell comprises, in sequence, a second transparent conductive layer, a second buffer layer, a third charge transport layer, a second perovskite active layer, a fourth charge transport layer, and a second transparent conductive substrate.

[0022] One of the third charge transport layer and the fourth charge transport layer is an electron transport layer, and the other is a hole transport layer.

[0023] The second transparent conductive layer is provided with a third metal electrode on one side.

[0024] The second transparent conductive substrate is provided with a fourth metal electrode on one side.

[0025] In some embodiments, the top cell is a perovskite top cell, and the bottom cell is a perovskite bottom cell.

[0026] Along the light incident direction, the four-terminal stacked solar cell comprises, in sequence, a down-conversion luminescent layer, a first transparent conductive substrate, a first charge transport layer, a first perovskite active layer, a second charge transport layer, a first buffer layer, a first transparent conductive layer, an up-conversion luminescent layer, a second transparent conductive layer, a second buffer layer, a third charge transport layer, a second perovskite active layer, a fourth charge transport layer, and a second transparent conductive substrate.

[0027] The first charge transport layer and the fourth charge transport layer are respectively a hole transport layer, and the second charge transport layer and the third charge transport layer are an electron transport layer.

[0028] In some embodiments, the band gap of the top cell is 1.5 eV to 1.7 eV, and the band gap of the bottom cell is 1.2 eV to 1.5 eV.

[0029] In a second aspect of the utility model, the utility model provides a photovoltaic module, the photovoltaic module includes the four-terminal stacked solar cell of first aspect.

[0030] In a third aspect of the utility model, the utility model provides a power utilization equipment, the power utilization equipment includes the four-terminal stacked solar cell of first aspect or the photovoltaic module of second aspect.

[0031] Additional aspects and advantages of the utility model will be partially given in the following description, some will become obvious from the following description, or be understood by the practice of the utility model. BRIEF DESCRIPTION OF DRAWINGS

[0032] The above and / or additional aspects and advantages of the present application will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the references to the following drawings, of which:

[0033] Figure 1 and Figure 2 respectively show a four-terminal laminated solar cell structure schematic diagram of one embodiment of the present application.

[0034] Reference signs:

[0035] 10: four-terminal laminated solar cell; 100: top cell; 110: first transparent conductive substrate; 120: first charge transport layer; 130: first perovskite active layer; 140: second charge transport layer; 150: first buffer layer; 160: first transparent conductive layer; 170: first metal electrode; 180: second metal electrode; 200: bottom cell; 210: second transparent conductive layer; 220: second buffer layer; 230: third charge transport layer; 240: second perovskite active layer; 250: fourth charge transport layer; 260: second transparent conductive substrate; 270: third metal electrode; 280: fourth metal electrode; 300: up-conversion luminescent layer; 400: down-conversion luminescent layer. DETAILED DESCRIPTION

[0036] The embodiments of the present application are described in detail below. The embodiments described below are exemplary only, and are used to explain the present application, and are not to be understood as limiting the present application. The specific technology or conditions not mentioned in the embodiments are carried out according to the technology or conditions described in the literature in the art or according to the product instructions. The reagents or instruments not marked with the manufacturer are all conventional products that can be obtained from the market.

[0037] In one aspect of the present application, the present application provides a four-terminal laminated solar cell, referring to Figure 1 The four-terminal laminated solar cell 10 includes a top cell 100 and a bottom cell 200, and an up-conversion luminescent layer 300 is arranged between the top cell 100 and the bottom cell 200.

[0038] The up-conversion luminescent layer is arranged between the top cell and the bottom cell of the four-terminal laminated solar cell, which is used to convert the long-wave infrared light in the part of the light that transmits through the top cell into visible light, enhance the light absorption of the visible waveband of the bottom cell, improve the stability of the cell, and at the same time, according to different light conditions, different up-conversion luminescent layers can be replaced to realize the optimization of light utilization of different spectra, and the overall performance is excellent.

[0039] According to embodiments of this application, the material of the upconversion light-emitting layer is one of rare-earth-doped halides, rare-earth-doped fluorides, rare-earth-doped silicates, rare-earth-doped tungstates, and rare-earth-doped phosphates. By doping with rare-earth elements, energy level matching between the intermediate layer and the sub-cell transport layer can be achieved, improving light-emitting performance. Specifically, the doping ratio can be flexibly selected according to actual needs, for example, it can be 5%-20%, such as 5%, 8%, 10%, 12%, 15%, 18%, and 20%.

[0040] The material of the upconversion light-emitting layer in this application is a known material, and this application does not strictly limit the method of obtaining it, such as purchasing, receiving as a gift, or preparing it yourself. In some embodiments, the preparation method of the upconversion light-emitting layer material includes:

[0041] First, a 20 mg / mL polymethyl methacrylate (PMMA) anisole solution was prepared as the stock solution for the upconversion luminescent powder. The solution was heated and stirred at 40°C until it became transparent and homogeneous. Then, β-NaYF4:Er was prepared at a concentration of 20 mg / mL. 3+ ,Yb 3+ Powder(Er 3+ The doping amount is 10% (molar percentage) of β-NaYF4, Yb 3+ The doping amount is 5% (molar percentage) of β-NaYF4 solution, which is stirred and ultrasonically dispersed evenly. Then, the solution is spin-coated onto the substrate at parameters of 3000 rpm, 2000 rpm / s, and 30s. After spin-coating, it is placed on a hot table at 160℃ to dry, and the product is obtained.

[0042] According to an embodiment of this application, the excitation wavelength of the upconversion emitting layer 310 is not less than 800 nm. The top cell cannot absorb light of this wavelength, but the upconversion emitting layer can convert it into light that is more easily absorbed by the bottom cell.

[0043] According to an embodiment of this application, the emitted light wavelength of the upconversion luminescent layer 310 is 400 nm to 800 nm. This emission wavelength can be absorbed by perovskite materials with low Sn content, thereby achieving the purpose of reducing the Sn content in the bottom cell perovskite and improving stability.

[0044] According to an embodiment of the present application, the thickness of the up-conversion luminescent layer 310 is 50-500 nm, for example, 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, or 500 nm. In this way, the long-wavelength infrared light can be efficiently converted into shorter-wavelength visible light, while reducing excessive light absorption and insufficient conversion efficiency. In this way, the overall photoelectric conversion efficiency and stability of the solar cell are improved while maintaining the economy of material cost and the feasibility of device manufacturing, and the light utilization rate and battery performance are improved.

[0045] According to an embodiment of the present application, the light incident surface of the top cell 100 is provided with a down-conversion luminescent layer 400. In this way, the short-wavelength light with λ≤400 nm is converted into 400-800 nm band light, reducing the adverse effects of ultraviolet light on perovskite materials, and improving the light absorption and conversion of the stacked cell in the visible and near-infrared bands.

[0046] According to an embodiment of the present application, the material of the down-conversion luminescent layer 400 is a down-conversion luminescent quantum dot and / or a down-conversion fluorescent powder.

[0047] According to an embodiment of the present application, the excitation wavelength of the down-conversion luminescent layer 400 is not less than 800 nm, for example, 800 nm, 900 nm, or 1000 nm. The top cell cannot absorb light of this wavelength, and the up-conversion luminescent layer can convert it into light that is beneficial to the absorption of the bottom cell.

[0048] According to an embodiment of the present application, the emission wavelength of the down-conversion luminescent layer 400 is 400-800 nm. This emission wavelength can be absorbed by low-Sn-content perovskite materials, thereby achieving the purpose of reducing the Sn content in the perovskite of the bottom cell to improve stability.

[0049] According to an embodiment of the present application, the thickness of the down-conversion luminescent layer 400 is 1-2000 nm, for example, 1 nm, 100 nm, 500 nm, 1000 nm, 1500 nm, or 2000 nm. In this way, the short-wavelength light with λ≤400 nm is converted into 400-800 nm band light, reducing the adverse effects of ultraviolet light on perovskite materials, and improving the light absorption and conversion of the stacked cell in the visible and near-infrared bands, and also reducing excessive light absorption and insufficient conversion efficiency. In this way, the overall photoelectric conversion efficiency and stability of the solar cell are improved while maintaining the economy of material cost and the feasibility of device manufacturing, and the light utilization rate and battery performance are improved.

[0050] It should be noted that the down-conversion luminescent material can be directly deposited on the light incident surface of the top cell; can be deposited on the inner side or outer side of the transparent glass cover plate of the top cell package; or can be transferred to the transparent conductive glass surface by pre-depositing on a high-transmittance adhesive film, thereby avoiding damage to the back film layer during film layer preparation such as spin coating adsorption or evaporation mask placement.

[0051] According to an embodiment of the present application, the top cell 100 is a perovskite top cell or an organic solar top cell (OPV).

[0052] According to an embodiment of the present application, the top cell 100 is a perovskite top cell, which includes, in order along the light incident direction: a first transparent conductive substrate 110, a first charge transport layer 120, a first perovskite active layer 130, a second charge transport layer 140, a first buffer layer 150, and a first transparent conductive layer 160.

[0053] One of the first charge transport layer 120 and the second charge transport layer 140 is an electron transport layer, and the other is a hole transport layer; illustratively, Figure 2 the first charge transport layer 120 in the above is a hole transport layer, and the second charge transport layer 140 is an electron transport layer;

[0054] The first transparent conductive substrate 110 is provided with a first metal electrode 170 on one side;

[0055] The first transparent conductive layer 160 is provided with a second metal electrode 180 on one side.

[0056] First transparent conductive substrate: The transparent conductive substrate is a high-transmittance glass on which ITO or FTO TCO is deposited, which should be cleaned before use. A method is provided herein: use a Kleenex to scrub the TCO surface, then ultrasonically clean it in cleaning agent, deionized water, and anhydrous ethanol for 15 minutes, and blow dry with a nitrogen gun. Clean the conductive substrate in the plasma for 8 minutes.

[0057] First hole transport layer: The material of this layer can be one or more of NiO x , CuI, CuSCN, PTAA, Me-4PACz (self-assembled material), etc., and the preparation method includes magnetron sputtering, solution method such as spin coating / coating, vacuum thermal evaporation, etc. A preparation process of a NiOx / Me-4PACz composite hole transport layer is provided herein: RF magnetron sputtering to prepare NiOx. The target material is NiO x (99.9%), and the pressure is set to be less than 1x10 -6Torr, power 100-200 W, sputtering film thickness 5-20 nm, then in a nitrogen atmosphere, Me-4PACz ethanol solution with a concentration of 0.5 mg / mL is spread on the NiOx substrate, spin coating is performed with parameters of 3000 rpm, 2000 rpm / s, 30 s, and after spin coating, annealing is performed on a hot table at 100°C for 10-15 min.

[0058] The first perovskite active layer: the layer is the active layer of the top cell, and the material composition is ABX3, wherein A is one or more of Cs + , FA + , and MA + , B is one or more of Pb 2+ and Sn 2+ , and X is I - and Br - , wherein the molar percentage of Br - is limited to 0-20% of the perovskite material (the photoinitiated phase separation behavior of the perovskite material with a Br content exceeding 20% is serious, affecting the stability), and the molar percentage of Sn 2+ does not exceed 50% of the perovskite material. Thus, the battery of the present application can reduce the content of Br and Sn, and improve the stability of the battery. The band gap of the layer ranges from 1.5 to 1.7 eV, and the thickness ranges from 100 to 1000 nm. The material preparation method includes solution methods such as spin coating / coating, vacuum thermal evaporation, and near-space sublimation. Herein, a method is provided: a mixed DMF / DMSO solution of PbI2 and PbBr2 with a concentration of 0.5-1.5 M is spin coated at a parameter of 2500 rpm, 2000 rpm / s for 30 s, and after spin coating, a yellow transparent PbX2 layer is formed by annealing it on a hot table at 70°C for 1 min; then, a mixed solution of FAI and MACl with a concentration of 0.2-0.6 M is spin coated at a parameter of 2700 rpm, 2000 rpm / s, 30 s, the mixed solution is quickly dropped onto the surface of the PbX2 substrate at the 3rd-5th s of spin coating, and after spin coating, annealing is performed on a hot table at 150°C for 15 min (the annealing atmosphere is dry air), thereby forming a perovskite active layer.

[0059] The first electron transport layer: the material of the layer can be one or more of C60, PCBM, SnO x , and the like, and the preparation method includes solution methods such as spin coating / coating, and ALD method. Herein, a method is provided: 30 nm of C -4 is evaporated under a vacuum degree of 10 60 Pa, and the evaporation rate

[0060] The first buffer layer: the material of the layer can be SnO x , AlO xOne or more of ITO, IZO, InO, etc. is prepared by ALD, and the film thickness ranges from 10 nm to 60 nm. A process is provided as follows: the cavity pressure is maintained at 15 Pa, the temperature is 50-100 ℃, nitrogen is used as the deposition source carrier gas at a flow rate of 60 sccm, TDMASn is used as the Sn source, and H2O is used as the O source, both at a flow rate of 30 sccm, and the SnO x The growth rate of the thin film is about 0.1 nm / cycle;

[0061] The first transparent conductive layer: The material of this layer can be ITO, IZO, InO x One or more of ITO, IZO, InO, etc. is prepared by ALD, and the film thickness ranges from 10 nm to 60 nm. A process is provided as follows: the cavity pressure is maintained at 15 Pa, the temperature is 50-100 ℃, nitrogen is used as the deposition source carrier gas at a flow rate of 60 sccm, TDMASn is used as the Sn source, and H2O is used as the O source, both at a flow rate of 30 sccm, and the SnO -6 Torr, the power is 50-150 W, and the film thickness is 50 nm.

[0062] According to an embodiment of the present application, the bottom cell 200 is one of a crystalline silicon bottom cell, a perovskite bottom cell, a cadmium telluride bottom cell, a copper indium gallium selenide bottom cell, and a gallium arsenide bottom cell.

[0063] According to an embodiment of the present application, the bottom cell 200 is a perovskite bottom cell, which includes, in sequence along the light incident direction, a second transparent conductive layer 210, a second buffer layer 220, a third charge transport layer 230, a second perovskite active layer 240, a fourth charge transport layer 250, and a second transparent conductive substrate 260.

[0064] One of the third charge transport layer 230 and the fourth charge transport layer 250 is an electron transport layer, and the other is a hole transport layer; for example, Figure 2 The third charge transport layer 230 in the perovskite top cell 100 is an electron transport layer, and the fourth charge transport layer 250 is a hole transport layer.

[0065] The second transparent conductive layer 210 is provided with a third metal electrode 270 on one side.

[0066] The second transparent conductive substrate 260 is provided with a fourth metal electrode 280 on one side.

[0067] According to an embodiment of the present application, the top cell 100 is a perovskite top cell, and the bottom cell 200 is a perovskite bottom cell.

[0068] In the light incident direction, the four-terminal stacked solar cell 10 comprises, in sequence: a down-conversion light-emitting layer 400, a first transparent conductive substrate 110, a first charge transport layer 120, a first perovskite active layer 130, a second charge transport layer 140, a first buffer layer 150, a first transparent conductive layer 160, an up-conversion light-emitting layer 300, a second transparent conductive layer 210, a second buffer layer 220, a third charge transport layer 230, a second perovskite active layer 240, a fourth charge transport layer 250, and a second transparent conductive substrate 260.

[0069] The first charge transport layer 120 and the fourth charge transport layer 250 are hole transport layers, and the second charge transport layer 140 and the third charge transport layer 230 are electron transport layers.

[0070] The second transparent conductive layer: The material of this layer can be one of ITO, IZO, InO x , ATO, etc. TCO, and the preparation method is magnetron sputtering, and the film thickness ranges from 10 nm to 100 nm. Here, a process is provided: ITO is prepared by radio frequency magnetron sputtering, wherein the target material is ITO (99.9%), the pressure in a pure argon environment is set to be lower than 1x10 -6 Torr, the power is 50-150 W, and the film thickness is 50 nm.

[0071] The second buffer layer: The material of this layer can be one or more of SnO x , AlO x , etc., and the preparation method is ALD, and the film thickness ranges from 10 nm to 60 nm. Here, a process is provided: the cavity pressure is kept at 15 Pa, the temperature is 50-100℃, nitrogen is used as the deposition source carrier gas with a flow rate of 60 sccm, TDMASn is used as the Sn source, and H2O is used as the O source, both with a flow rate of 30 sccm, and the growth rate of the SnO x thin film is about 0.1 nm / cycle.

[0072] The second hole transport layer: The material of this layer can be one or more of NiO x , CuI, CuSCN, PTAA, Me-4PACz (self-assembled material), etc., and the preparation method includes magnetron sputtering, solution methods such as spin coating / coating, vacuum thermal evaporation, etc. Here, a preparation process of a NiO x / Me-4PACz composite hole transport layer is provided: NiO x is prepared by radio frequency magnetron sputtering. Herein, the target material is NiO x (99.9%), the pressure in a pure argon environment is set to be lower than 1x10 -6Torr, power 100-200 W, sputtering film thickness 5-20 nm, then in a nitrogen atmosphere, Me-4PACz ethanol solution with a concentration of 0.5 mg / mL is spread on the NiOx substrate, spin coating is carried out at 3000 rpm, 2000 rpm / s, 30 s, and after spin coating, annealing is carried out on a hot table at 100°C for 10-15 min.

[0073] The second perovskite active layer: the layer is a bottom cell active layer, and the material components are ABX3, wherein A is one or more of Cs + , FA + , and MA + , B is one or more of Pb 2+ and Sn 2+ , and X is I - and Br - , wherein the molar percentage of Br - is 0-5% of the perovskite material, and the molar percentage of Sn 2+ does not exceed 50% of the perovskite material. Thus, the battery of the present application can reduce the content of Br and Sn, and improve the stability of the battery. The band gap of the layer ranges from 1.2 eV to 1.5 eV, and the thickness ranges from 100 nm to 1500 nm. The material preparation method includes solution methods such as spin coating / coating, vacuum thermal evaporation, and near-space sublimation. Here, a method is provided: a mixed DMF / DMSO solution of PbI2 and SnI2 with a concentration of 1.0-2.0 M is spin coated at 2500 rpm, 2000 rpm / s for 30 s, and after spin coating, the yellow transparent PbSnI2 layer is formed by annealing on a hot table at 70°C for 1 min; then, a mixed solution of FAI and MACl with a concentration of 0.3-0.8 M is spin coated at 2700 rpm, 2000 rpm / s, 30 s, the mixed solution is quickly dropped onto the surface of the PbSnI2 substrate at the 3rd-5th second of spin coating, and after spin coating, the perovskite active layer is formed by annealing on a hot table at 150°C for 15 min.

[0074] The second electron transport layer: the material of the layer can be one or more of C60, PCBM, SnO x , and the like, and the preparation method includes solution methods such as spin coating / coating, and ALD method. Here, a method is provided: 30 nm of C60 is evaporated under the condition of a vacuum degree of 10 -4 Pa, and the evaporation rate

[0075] Down-conversion light-emitting layer: the material of this layer can be one or more of down-conversion light-emitting quantum dots, down-conversion fluorescent powder and other materials, the excitation wavelength λ≤400 nm, and the emission light wavelength is in the range of 400-1000 nm. A process is provided as follows: first, a PMMA anisole solution with a concentration of 20 mg / mL is configured as a down-conversion light-emitting powder mother liquor, heated and stirred at 40°C until the solution is transparent and uniform, then a NaYF4:Tb 3+ ,Yb 3+ powder solution with a concentration of 20 mg / mL is prepared, stirred and uniformly ultrasonically dispersed, then the solution is spin-coated on the substrate at a speed of 3000 rpm, an acceleration of 2000 rpm / s and a time of 30 s, and after spin coating, the substrate is placed on a hot table for drying at 160°C.

[0076] In the second aspect of the present application, a photovoltaic module is provided, which comprises the four-terminal laminated solar cell of the first aspect of the present application. The features and advantages described above for the four-terminal laminated solar cell also apply to the photovoltaic module, which will not be described again here.

[0077] In the present application, the photovoltaic module refers to a solar cell module, i.e., an overall module comprising a plurality of four-terminal laminated solar cells. The module comprises a plurality of cell strings, each cell string comprising a plurality of four-terminal laminated solar cells connected in series by a connector such as a solder strip.

[0078] In the photovoltaic module, in addition to the cell strings, it also comprises a front glass, a front encapsulation adhesive film, a back encapsulation adhesive film, a back glass and the like. As an example, the photovoltaic module comprises a front glass, a front encapsulation adhesive film, a cell string, a back encapsulation adhesive film and a back glass which are sequentially stacked in the thickness direction.

[0079] In the third aspect of the present application, an electric device is provided, which comprises the photovoltaic module of the second aspect of the present application. Thus, the electric device has all the features and advantages of the photovoltaic module described above, which will not be described again here.

[0080] The electric device can also be applied to a device or apparatus that generates electricity using solar energy, for example. The four-terminal laminated solar cell and the photovoltaic module can be used as a power source of the electric device, or as an energy storage unit of the electric device, and can be applied to a photovoltaic power station (such as a ground power station, a roof power station, a water surface power station), a user solar power source, a solar street lamp, a solar car, a solar building electric device, a mobile device (such as a mobile phone, a notebook computer and the like), an electric vehicle (such as a pure electric vehicle, a hybrid electric vehicle, a plug-in hybrid electric vehicle, an electric bicycle, an electric scooter, an electric golf cart, an electric truck and the like), an electric train, a ship, an energy storage system and the like, but is not limited thereto.

[0081] As a power utilization device, a battery, a battery module or a battery pack can be selected according to its use requirement.

[0082] As an embodiment of the power utilization device can be a pure electric vehicle, a hybrid electric vehicle, a plug-in hybrid electric vehicle, etc. In order to meet the requirement of high power and high energy density of the battery for the power utilization device, a battery pack or a battery module can be used.

[0083] As another embodiment of the power utilization device can be a mobile phone, a tablet computer, a notebook computer, etc. The power utilization device usually requires thin and light, and a battery can be used as a power supply. Of course, it can be understood that the application scenario of the power utilization device is not limited to this, that is, the power utilization device can be applied in all fields requiring solar power generation. Taking a photovoltaic power generation system network as an example, the power utilization device can include a photovoltaic array, a combiner box and an inverter, the photovoltaic array can be an array combination of a plurality of photovoltaic components, for example, a plurality of photovoltaic components can form a plurality of photovoltaic arrays, the photovoltaic array is connected to the combiner box, the combiner box can combine the current generated by the photovoltaic array, and the combined current flows through the inverter to convert into alternating current required by the power grid and then access the power network to realize solar power supply.

[0084] In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically limited.

[0085] In the description of the present application, it is understood that the orientation or positional relationship indicated by the terms "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements indicated must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0086] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limiting the present application, and those skilled in the art can make changes, modifications, replacements and variations to the above embodiments within the scope of the present application.

Claims

1. A four-terminal tandem solar cell, characterized by, The application relates to a four-terminal tandem solar cell. The four-terminal tandem solar cell comprises a top cell and a bottom cell, and an up-conversion luminescent layer is arranged between the top cell and the bottom cell.

2. The four-terminal tandem solar cell according to claim 1, characterized in that The material of the up-conversion luminescent layer is one of a rare earth element-doped halide, a rare earth element-doped silicate, a rare earth element-doped tungstate and a rare earth element-doped phosphate.

3. The four-terminal tandem solar cell according to claim 1, wherein The excitation wavelength of the up-conversion luminescent layer is not less than 800 nm; and / or, The emission light wavelength of the up-conversion luminescent layer is 400-800 nm; and / or, The thickness of the up-conversion luminescent layer is 50-500 nm.

4. The four-terminal tandem solar cell according to claim 1, wherein The light incidence surface of the top cell is provided with a down-conversion luminescent layer.

5. The four-terminal tandem solar cell according to claim 4, characterized in that The material of the down-conversion luminescent layer is a down-conversion luminescent quantum dot or a down-conversion fluorescent powder; and / or, The excitation wavelength of the down-conversion luminescent layer is not more than 400 nm; and / or, The emission light wavelength of the down-conversion luminescent layer is 400-800 nm.

6. The four-terminal tandem solar cell according to claim 1, wherein The top cell is a perovskite top cell or an organic solar top cell.

7. The four-terminal tandem solar cell according to claim 1, wherein When the top cell is a perovskite top cell, the perovskite top cell comprises, in sequence along the light incidence direction, a first transparent conductive substrate, a first charge transport layer, a first perovskite active layer, a second charge transport layer, a first buffer layer and a first transparent conductive layer. One of the first charge transport layer and the second charge transport layer is an electron transport layer, and the other is a hole transport layer. The first transparent conductive substrate is provided with a first metal electrode on one side. The first transparent conductive layer is provided with a second metal electrode on one side.

8. The four-terminal tandem solar cell according to claim 1, wherein The bottom cell is one of a crystalline silicon bottom cell, a perovskite bottom cell, a cadmium telluride bottom cell, a copper indium gallium selenide bottom cell and a gallium arsenide bottom cell.

9. The four-terminal tandem solar cell according to claim 1, wherein When the bottom cell is a perovskite bottom cell, the perovskite bottom cell comprises, in sequence along the light incidence direction, a second transparent conductive layer, a second buffer layer, a third charge transport layer, a second perovskite active layer, a fourth charge transport layer and a second transparent conductive substrate. One of the third charge transport layer and the fourth charge transport layer is an electron transport layer, and the other is a hole transport layer. The second transparent conductive layer is provided with a third metal electrode on one side. The second transparent conductive substrate is provided with a fourth metal electrode on one side.

10. The four-terminal tandem solar cell according to claim 1, 7 or 9, characterized in that, The top cell is a perovskite top cell, and the bottom cell is a perovskite bottom cell. When the top cell is a perovskite top cell and the bottom cell is a perovskite bottom cell, the four-terminal tandem solar cell comprises, in sequence along the light incidence direction, a down-conversion luminescent layer, a first transparent conductive substrate, a first charge transport layer, a first perovskite active layer, a second charge transport layer, a first buffer layer, a first transparent conductive layer, an up-conversion luminescent layer, a second transparent conductive layer, a second buffer layer, a third charge transport layer, a second perovskite active layer, a fourth charge transport layer and a second transparent conductive substrate. The first charge transport layer and the fourth charge transport layer are respectively hole transport layers, and the second charge transport layer and the third charge transport layer are electron transport layers.

11. The four-terminal tandem solar cell according to claim 1, characterized in that The band gap of the top cell is 1.5-1.7 eV, and the band gap of the bottom cell is 1.2-1.5 eV.

12. A photovoltaic module, characterized by, The application further relates to a four-terminal tandem solar cell.

13. An electrical device, characterized by The application further relates to a photovoltaic module.

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