Radio frequency module packaging structure
By designing a radio frequency module packaging structure and utilizing a combination of thermally conductive metals and graphene materials, the thermal management challenges of high integration in radio frequency modules were solved, achieving a more efficient heat dissipation effect.
Patent Information
- Application Number
- CN202422974964.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-04
- Publication Date
- 2025-11-11
- Estimated Expiration
- 2034-12-04
AI Technical Summary
As the integration of RF modules increases, thermal management has become a significant challenge, with high-density integration leading to higher power density and more complex heat dissipation issues.
A radio frequency module packaging structure was designed, including a substrate, a via, and a metal region. A thermally conductive metal is placed inside the via. The inner diameter of the via gradually decreases and then increases. The metal region is connected to the via and combined with graphene material for heat transfer and dissipation.
It effectively improves the heat dissipation capacity of the RF module, avoids the problem of insufficient chip heat transfer efficiency, increases the total amount of heat conduction, and improves the heat dissipation effect.
Smart Images
Figure CN223539594U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of packaging technology, and in particular to a radio frequency module packaging structure. Background Technology
[0002] A radio frequency (RF) module is an electronic component used for wireless communication, responsible for transmitting and receiving signals. It is widely used in various wireless communication devices, such as mobile phones, wireless routers, satellite communication systems, and Bluetooth devices.
[0003] The packaging structure of an RF module is a crucial component of its physical design, directly impacting its performance, reliability, and cost. Factors to consider in RF module packaging include electromagnetic compatibility (EMC), thermal management, and more.
[0004] With the rapid development of communication technology, the introduction of new operating frequency bands and communication modes is driving the development of RF front-end modules towards multi-device and multi-link architectures. The number of integrated active and passive components is increasing exponentially in RF front-end modules that require the integration of multiple functions. During packaging, multiple chips are often integrated into a single RF module package structure to achieve higher integration and performance. However, with the increasing integration of RF modules, thermal management has become a significant challenge. High-density integration leads to higher power density and more complex heat dissipation issues. Therefore, the industry desires a packaging structure and manufacturing method for RF modules to effectively solve the heat generation problems generated during RF module packaging. Utility Model Content
[0005] To address the shortcomings of existing technologies, this utility model provides a radio frequency module packaging structure.
[0006] A radio frequency module packaging structure includes a substrate having a first surface and a second surface disposed opposite to each other; a plurality of first through holes penetrating the first surface of the substrate to the second surface of the substrate, wherein a thermally conductive metal is disposed in the first through holes; a metal region including a first region and a second region, one side of the first region being disposed on the second surface of the substrate and extending horizontally, the second region being connected to the first region and located inside the substrate, and the second region being connected to at least one of the first through holes; and a first chip bonded to the other side of the first region; wherein, along the direction from the first surface to the second surface, the inner diameter of the first through holes first gradually decreases and then gradually increases.
[0007] Furthermore, in the radio frequency module packaging structure provided by this utility model, the inner diameter of the first through hole on the side closer to the chip is a, and the inner diameter on the other side of the first through hole is b, where a ≥ b.
[0008] Furthermore, in the radio frequency module packaging structure provided by this utility model, the first through hole is arranged in a hyperbolic shape.
[0009] Furthermore, in the radio frequency module packaging structure provided by this utility model, the minimum inner diameter of the first through hole is R1, the maximum inner diameter of the through hole is R2, and the ratio of R1 / R2 is in the range of [0.2, 0.5].
[0010] Furthermore, in the radio frequency module packaging structure provided by this utility model, the area ratio of the second region to the area of at least one first through hole is greater than 20:1.
[0011] Furthermore, in the radio frequency module packaging structure provided by this utility model, the thickness of the first region is H1, and the length of the first through hole is H2, wherein the ratio of H1 to H2 is 1 / 25 to 1 / 15.
[0012] Furthermore, in the radio frequency module packaging structure provided by this utility model, the thickness of the graphene is D1, and the thickness of the first chip is D2, wherein the ratio is greater than 1:3.
[0013] Furthermore, in the radio frequency module packaging structure provided by this utility model, a groove extending downward from the first surface is provided on the substrate, and / or a groove extending upward from the second surface is provided on the substrate, the groove is connected to the second region, and a second chip is disposed in the groove.
[0014] Furthermore, in the radio frequency module packaging structure provided by this utility model, a second through hole is provided between the second region and the second chip, and the second through hole is provided with the thermally conductive metal. Along the direction from the second chip to the second region, the inner diameter of the second through hole first decreases and then increases.
[0015] Furthermore, in the radio frequency module packaging structure provided by this utility model, the thermal conductivity of the thermally conductive metal is greater than that of the first region.
[0016] The beneficial effects of this utility model are:
[0017] 1. The radio frequency module packaging structure provided by this utility model includes: a metal region, including a first region and a second region, one side of the first region is disposed on the second surface of the substrate and extends in a horizontal direction, the second region is connected to the first region and located inside the substrate, and the second region is connected to at least one first through hole; a first chip, bonded to the other side of the first region; wherein, along the direction from the first surface to the second surface, the inner diameter of the first through hole first gradually decreases and then gradually increases.
[0018] In this invention, the first chip is typically a high-power chip. Heat generated by the first chip is first transferred to the first region of the metal area. Since the first region connects to both the second region and the first through-hole, and a thermally conductive metal is disposed within the first through-hole, the heat transferred from the first region is dispersed, entering the second region and the thermally conductive metal, and then released to the external environment through the thermally conductive metal and the second region, thus completing the heat transfer and cooling of the first chip. Simultaneously, by limiting the first region to extend horizontally, a larger contact area with the first chip can be achieved, further improving the heat dissipation effect.
[0019] The structure provided by this utility model can avoid the shortcomings of insufficient chip heat transfer efficiency caused by directly setting heat dissipation structures on the chip in the prior art.
[0020] Furthermore, in this invention, along the direction from the first surface to the second surface, the inner diameter of the through-hole gradually decreases and then gradually increases. Simultaneously, the metal in the corresponding first region also undergoes a deformation that first increases and then decreases. This arrangement effectively increases the heat absorption area at the junction of the through-hole and the chip, thereby further increasing the total amount of heat conducted per unit time. Moreover, because the size of the through-hole decreases and then increases again, it forms a shape similar to a Raoult tube. The heat transferred through the first region also produces a similar fluid acceleration effect to that in a Raoult tube, meaning that the total amount of heat transferred from the first region to the second region per unit time gradually increases, thus effectively improving the chip's heat dissipation capacity.
[0021] 2. In this invention, the inner diameter of the first through hole on the side closest to the chip is 'a', and the inner diameter on the other side of the first through hole is 'b', where a ≥ b. This arrangement further increases the heat absorption capacity of the metal in the through hole, thereby improving the thermal conductivity of the chip.
[0022] 3. In this utility model, at least a portion of the outer surface of the first region is coated with graphene. As a good heat-absorbing rubbing material, graphene can absorb the heat transferred from the first chip and then dissipate it to the external environment. When the temperature of graphene decreases, it can continue to absorb the heat of the first chip, so that the heat of the first chip can be continuously absorbed.
[0023] 4. In this utility model, the substrate is provided with a groove extending downward from the first surface, and / or the substrate is provided with a groove extending upward from the second surface. The groove is connected to the second region, and a second chip is disposed in the groove. By providing several grooves and placing a low-power second chip in the grooves, heat can be effectively dissipated through the heat transfer of the second region. Attached Figure Description
[0024] The specific details of this utility model are described below with reference to the accompanying drawings, which will help to more easily understand the above and other objects, features, and advantages of this utility model. The drawings are only for illustrating the principle of this utility model. The dimensions and relative positions of the units are not necessarily drawn to scale in the drawings.
[0025] Figure 1 This is a schematic diagram of the packaging structure provided by this utility model;
[0026] Figure 2 yes Figure 1 The structural schematic diagram of the first or second through hole provided in the diagram;
[0027] Figure 3 for Figure 1 The diagram shows the dimensions of the first zone and the first through hole.
[0028] Explanation of reference numerals in the attached figures
[0029] 1. Substrate; 101. First surface; 102. Second surface; 103. Groove;
[0030] 2. First through hole; 3. Thermally conductive metal;
[0031] 4. Metal zone; 401. Zone 1; 402. Zone 2; 403. Protrusion
[0032] 5. First chip; 6. Second chip; 7. Second through hole. Detailed Implementation
[0033] To make the above-mentioned objectives, features, and advantages of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings, making the above-mentioned and other objectives, features, and advantages of this utility model clearer. In all the drawings, the same reference numerals indicate the same parts. The drawings are not intentionally drawn to scale; the focus is on illustrating the main points of this utility model.
[0034] The terms and words used in the following description and claims are not limited to their literal meaning, but are intended solely for the inventor's use to ensure a clear and consistent understanding of the present invention. Therefore, it will be apparent to those skilled in the art that the following description of various embodiments of the present invention is for illustrative purposes only and not for limiting the present invention as defined by the appended claims and their equivalents.
[0035] It should be understood that the singular forms “a,” “an,” and “the” include plural objects unless the context explicitly indicates otherwise. Thus, for example, referring to a “module” includes referring to one or more such modules. The advantages and features of this invention, as well as methods of implementing this invention, can be more readily understood by referring to the detailed description and accompanying drawings of the embodiments below. However, this invention can be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this invention will be thorough and complete, and fully convey the concept of this invention to those skilled in the art.
[0036] Example
[0037] This embodiment provides a radio frequency module packaging structure, such as Figures 1-3 As shown, including
[0038] Substrate 1, wherein the substrate 1 has a first surface 101 and a second surface 102 disposed opposite to each other;
[0039] Specifically, the substrate 1 can be an organic substrate 1; or it can be a physical substrate. When a physical substrate is used, it has good light transmittance. At the same time, a groove 103 is formed on the substrate. Since the glass has good light transmittance, heat can be dissipated quickly.
[0040] As shown in the figure, the first surface 101 is located on the upper part of the base 1, and the second surface 102 is located on the lower part of the base 1.
[0041] like Figure 1 As shown, there are several first through holes 2, which extend along the height direction and penetrate from the first surface 101 of the substrate 1 to the second surface 102 of the substrate 1. A heat-conducting metal 3 is disposed in the first through hole 2.
[0042] Specifically, the method of forming the through-hole is not limited, as long as a hole-like structure can be formed on the substrate 1. Common methods of existing technology such as etching or laser can be used for hole formation. In this embodiment, dry etching can be used to form the through-hole.
[0043] Metal region 4 includes a first region 401 and a second region 402. One side of the first region 401 is disposed on the second surface 102 of the substrate 1 and extends horizontally. The second region 402 is connected to the first region 401 and is located inside the substrate 1. The second region 402 is connected to at least one first through hole 2. The area ratio of the second region 402 to the area of the at least one first through hole 2 connected to it must be at least 20:1, thereby ensuring the heat dissipation effect of the first chip itself.
[0044] like Figure 1As shown, the first region 401 is located at the lower part, and the second region 402 is located above the first region 401, with the second region 402 situated in the middle region of the substrate 1. The first through hole 2 can pass through the second region 402 and extend downward to the bottom surface of the substrate 1.
[0045] The material of the metal region 4 is not limited. As one implementation, the metal region 4 is made of copper.
[0046] The first chip 5 is bonded to a surface of the first region 401;
[0047] like Figure 1 As shown, the first chip 5 is located on the lower surface of the first region 401.
[0048] like Figure 1 and Figure 2 As shown, along the direction from the first surface 101 to the second surface 102, the inner diameter of the first through hole 2 first gradually decreases and then gradually increases.
[0049] Along the direction from the first surface 101 to the second surface 102, the inner diameter of the first through-hole 2 gradually decreases and then gradually increases. Simultaneously, the heat-conducting metal 3 in the corresponding first region 401 also undergoes corresponding deformation. This arrangement effectively increases the heat absorption area at the junction of the through-hole and the chip, thereby further increasing the total amount of heat transferred per unit time. Furthermore, as the through-hole size decreases and then increases again, it forms a shape similar to a Raoult tube. The heat transferred through the first region 401 also produces a similar fluid acceleration effect, meaning that the total amount of heat transferred from the first region 401 to the second region 402 per unit time gradually increases, effectively improving the chip's heat dissipation capacity.
[0050] In addition, the via itself can also be set as a regular cylindrical structure. In this embodiment, the via is set as a shape in which the inner diameter decreases and then increases. According to the process requirements, when the inner diameter of the via in the middle is the minimum diameter of the via, the size of the two ends of the via will be larger than the size of the middle of the via. At this time, the heat absorption area of the via is also larger, which can effectively ensure the heat dissipation performance of the chip.
[0051] In this embodiment, as Figure 1 As shown, the second region 402 extends horizontally, with its two ends extending to the left and right ends of the substrate 1 respectively, and in contact with the outside, thereby helping to dissipate the internal heat to the external environment in a timely manner.
[0052] At the same time, the first region 401 is also horizontally arranged. Along the left-to-right direction, the size of the first region 401 is two-thirds the size of the base 1, and the size of the first region 401 is related to its dimensions.
[0053] In this embodiment, as one implementation method, the inner diameter of the first through hole 2 on the side closer to the chip is a, and the inner diameter of the other side of the first through hole 2 is b, where a ≥ b.
[0054] Specifically, as one implementation method, the lower dimension of the first through hole 2 can be set to be larger than the upper dimension. In this case, the first through hole 2 will have a stronger heat absorption capacity for the chip and can conduct more heat off the chip.
[0055] As another implementation method, such as Figure 2 As shown, the first through hole 2 is hyperbolic in shape, meaning that the upper and lower dimensions of the first through hole 2 are the same. This arrangement facilitates processing.
[0056] In this embodiment, as Figure 2 As shown, the minimum inner diameter of the first through hole 2 is R1, the maximum inner diameter of the first through hole 2 is R2, and the ratio of R1 / R2 is in the range of [0.2, 0.5].
[0057] By using the above-described configuration, it is possible to ensure that the first through-hole 2 has sufficient processing strength, thus preventing the stability of the substrate 1 from being affected by the presence of the first through-hole 2. Simultaneously, by confining them within the aforementioned range, the thermal conductivity of the first chip 5 can be ensured.
[0058] Furthermore, in this embodiment, graphene is coated on the surface of the first region 401. By providing a heat-absorbing material layer on the surface of the first region 401, the heat of the first chip 5 can be transferred to the graphene layer first, and the graphene layer can further exchange heat with the outside. Since the graphene layer has a higher thermal conductivity, the heat stored in the first chip 5 can be quickly transferred to the outside.
[0059] In this embodiment, as Figure 3 As shown, the thickness of the first region 401 is H1, and the length of the first through hole 2 is H2, wherein the ratio of H1:H2 is less than 1:20. In this embodiment, the ratio is preferably 1 / 25, at which point the heat dissipation effect is optimal.
[0060] In this embodiment, graphene is coated on the outer surface of the first chip, the thickness of the graphene is D1, and the thickness of the first chip 5 is D2, wherein the ratio of D1:D2 is greater than 1:3. In this embodiment, the ratio is preferably 0.5, which allows the heat generated by the first chip to be quickly transferred and dissipated to the outside.
[0061] Furthermore, a groove 103 extending downward from the first surface 101 is provided on the substrate 1, and / or a groove 103 extending upward from the second surface 102 is provided on the substrate 1, the groove 103 is connected to the second region 402, and a second chip 6 is provided in the groove 103.
[0062] like Figure 1 As shown, the upper side of the substrate 1 has three grooves 103 extending downwards, and the lower side of the substrate 1 has one groove 103 extending upwards. The second chip 6 can be disposed in the grooves 103 respectively. In this embodiment, the power of the second chip 6 is less than that of the first chip 5. Through the above arrangement, the heat of the second chip 6 can also be transferred to the second region 402, and the heat transfer is completed through the second region 402, thereby ensuring the heat dissipation effect of the entire packaging structure.
[0063] In this embodiment, the structure of the groove 103 itself is not limited; it can be a cubic, cuboid, or cylindrical structure, as long as it can form a certain accommodating space. In this embodiment, the groove 103 can be formed on the substrate 1 using wet etching or dry etching. The mounting method of the second chip 6 in the groove 103 is not limited, as long as it can achieve stability.
[0064] Furthermore, such as Figure 1 As shown, a second through hole 7 is provided between the second region 402 and the second chip 6. The second through hole 7 is provided with the heat-conducting metal. Along the direction from the second chip 6 to the second region 402, the inner diameter of the second through hole 7 first decreases and then increases.
[0065] Specifically, the shapes of the first through hole 2 and the second through hole 7 can be consistent, such as both being hyperbolic. The heat-conducting metal provided in the second through hole 7 can act as a heat-conducting bridge between the second region 402 and the second chip 6, thereby facilitating the rapid dissipation of heat generated in the second chip 6 to the outside.
[0066] Furthermore, in order to better connect the second chip 6, a certain protrusion 403 can be formed on the second region 402, such as... Figure 1 As shown, the protrusion 403 provides a certain degree of support and lays the foundation for subsequent installation and connection.
[0067] Furthermore, the thermal conductivity of thermally conductive metal 3 is greater than that of the first region 401.
[0068] With the above-described configuration, due to the high thermal conductivity of the thermally conductive metal 3, the heat dissipation area can drive the heat to flow outward along the first area 401, thereby creating a similar pulling effect on the heat of the first chip 5, and thus effectively improving the overall heat dissipation level.
[0069] In one implementation, the thermally conductive metal 3 can be made of copper, and the first region 401 can be made of aluminum. For more precise structures, the thermally conductive metal 3 can be made of silver, and the first region 401 can be made of copper.
[0070] While the technology has been described and illustrated with respect to one or more embodiments, changes and / or modifications may be made to the illustrated examples without departing from the spirit and scope of the appended claims. In particular, with respect to the various functions performed by the aforementioned components or structures (components, devices, circuits, systems, etc.), the terminology used to describe such components (including references to “apparatus”) is intended to correspond to any component or structure performing the specified function of the described component (e.g., functionally equivalent), even if structurally not equivalent to the disclosed structure performing the function of the illustrated embodiments described herein, unless otherwise specified. Furthermore, while a particular feature may have been disclosed with respect to one of several embodiments, such feature may be combined with one or more other features in other embodiments as may be desired and advantageous for any given or particular application. Moreover, with regard to the use of the terms “comprising,” “including,” “having,” “containing,” “comprising,” or variations thereof in the detailed description or claims, such terms are intended to be inclusive in a manner similar to the term “comprising.”
[0071] Many specific details have been set forth in the above description to provide a full understanding of this utility model. However, the above description is only a preferred embodiment of this utility model, and this utility model can be implemented in many other ways different from those described herein. Therefore, this utility model is not limited to the specific embodiments disclosed above. Furthermore, any person skilled in the art can make many possible variations and modifications to the technical solution of this utility model using the methods and techniques disclosed above, or modify it into equivalent embodiments with equivalent changes, without departing from the scope of the technical solution of this utility model. Any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of this utility model, without departing from the content of the technical solution of this utility model, shall still fall within the protection scope of the technical solution of this utility model.
Claims
1. A radio frequency module packaging structure, characterized in that, include The substrate (1) has a first surface (101) and a second surface (102) disposed opposite to each other. A plurality of first through holes (2) penetrate from the first surface (101) of the substrate (1) to the second surface (102) of the substrate (1), and a heat-conducting metal (3) is disposed in the first through holes (2); The metal region (4) includes a first region (401) and a second region (402). One side of the first region (401) is disposed on the second side (102) of the substrate (1) and extends in the horizontal direction. The second region (402) is connected to the first region (401) and is located inside the substrate (1). The second region (402) is connected to at least one of the first through holes (2). The first chip (5) is bonded to the other side of the first region (401); In the direction from the first surface (101) to the second surface (102), the inner diameter of the first through hole (2) first gradually decreases and then gradually increases.
2. The RF module packaging structure according to claim 1, characterized in that, The inner diameter of the first through hole (2) on the side closest to the chip is a, and the inner diameter of the other side of the first through hole (2) is b, where a ≥ b.
3. The RF module packaging structure according to claim 2, characterized in that, The first through hole (2) is arranged in a hyperbolic shape.
4. The RF module packaging structure according to claim 3, characterized in that, The minimum inner diameter of the first through hole (2) is R1, the maximum inner diameter of the first through hole (2) is R2, and the ratio of R1 / R2 is in the range of [0.2, 0.5].
5. The RF module packaging structure according to claim 1, characterized in that, The area of the second region (402) is greater than 20:1 compared with the area of at least one of the first through holes (2).
6. The RF module packaging structure according to claim 1 or 5, characterized in that, The thickness of the first region (401) is H1, and the length of the first through hole (2) is H2, wherein the ratio of H1 to H2 is 1 / 25 to 1 / 15.
7. The RF module packaging structure according to claim 1 or 5, characterized in that, At least a portion of the outer surface of the first region (401) is coated with graphene, the thickness of which is D1, and the thickness of the first chip (5) is D2, wherein the ratio of D1:D2 is greater than 1:
3.
8. The RF module packaging structure according to claim 1, characterized in that, The substrate (1) is provided with a groove (103) extending downward from the first surface (101), and / or the substrate (1) is provided with a groove (103) extending upward from the second surface (102), the groove (103) is connected to the second area (402), and a second chip (6) is provided in the groove (103).
9. The radio frequency module packaging structure according to claim 8, characterized in that, A second through hole (7) is provided between the second region (402) and the second chip (6). The second through hole (7) is provided with the heat-conducting metal. Along the direction from the second chip (6) to the second region (402), the inner diameter of the second through hole (7) first decreases and then increases.
10. The radio frequency module packaging structure according to claim 1, characterized in that, The thermal conductivity of the thermally conductive metal (3) is greater than that of the first region (401).