Lamp source heating system of semiconductor nitriding and oxidizing equipment

Abstract

The utility model discloses a semiconductor nitriding oxidation equipment lamp source heating system, which comprises a process cavity, a lamp source is arranged at the top of the process cavity, and the lamp source comprises a plurality of lamp beads which are uniformly distributed at the top of the process cavity and can be independently controlled. Compared with the prior art, the utility model has the advantages that the lamp source which can be independently controlled is additionally arranged at the top of the quartz cavity, different numbers of lamp beads in different areas are turned on, energy compensation is provided for wafers, the lamp beads in a low-plasma-concentration area are turned on, and the lamp beads in a high-plasma-concentration area are turned off; and the uniformity of the nitrided and oxidized film can be obviously improved.

Description

Technical Field

[0001] This utility model relates to heating systems, and more particularly to a lamp source heating system for a semiconductor nitriding oxidation device, belonging to the field of semiconductor equipment technology. Background Technology

[0002] As integrated circuits develop towards larger scale and higher integration, the need to reduce semiconductor deposition process temperatures is becoming increasingly urgent in order to achieve high-quality thin film deposition. This necessitates the development of technologies that can form thin films with higher flatness at lower temperatures. Compared to traditional heating processes, plasma-enhanced processes use an external electric field and rely on radio frequency induction to ionize the target material source gas, generating plasma and increasing the activity of the reactants, thus lowering the required reaction temperature to below 450 degrees Celsius. For example, the nitride oxidation process used in DRAM technology achieves selective nitride oxidation through ICP / CCP plasma enhancement. However, since the plasma distribution within the cavity is not uniform, it is affected by factors such as the position of the molecular pump orifice and the spiral shape of the resonant coil. Adjusting the resonant coil position and other methods can only slightly improve the uniformity of the nitride oxide film. Wafer films in areas with lower plasma concentration tend to be thinner. Adding independently controllable light sources to the top of the quartz cavity, and turning on different numbers of lights in different areas to provide energy compensation to the wafer—turning on the side with lower plasma concentration and turning off the light sources on the side with higher plasma concentration—can significantly improve the uniformity of the nitride oxide film. Therefore, developing a lamp source heating system for semiconductor nitride oxidation equipment to precisely control the plasma concentration distribution has become an urgent problem for those skilled in the art. Utility Model Content

[0003] The present invention addresses the aforementioned shortcomings by providing a lamp source heating system for a semiconductor nitriding oxidation device.

[0004] The above-mentioned objective of this utility model is achieved through the following technical solution: a lamp source heating system for a semiconductor nitriding oxidation equipment, comprising a process cavity, wherein a lamp source is provided on the top of the process cavity, and the lamp source comprises a plurality of independently controllable lamp beads evenly distributed on the top of the process cavity.

[0005] Furthermore, the LED beads are evenly distributed on the top of the process cavity in a ring array, rectangular array, or triangular array.

[0006] Furthermore, the LED bead is disposed on the outer side of the top of the process cavity, and the top of the process cavity is made of a transparent material.

[0007] Furthermore, the process cavity is provided with a process gas inlet at the top and an exhaust port at the bottom. A resonant coil is provided at the upper part of the process cavity, and the resonant coil is connected to a high-frequency power supply through a matching device. A wafer stage for placing wafers is provided at the lower part of the process cavity.

[0008] Furthermore, the process cavity is a quartz cavity.

[0009] The advantages of this invention compared to existing technologies are: by adding an independently controllable light source to the top of the quartz cavity, different numbers of LEDs in different areas are turned on to provide energy compensation to the wafer. The LEDs in areas with low plasma concentration are turned on, and the LEDs in areas with high plasma concentration are turned off, which can significantly improve the uniformity of the nitride oxide film. Attached Figure Description

[0010] Figure 1 This is a schematic diagram of the structure of this utility model.

[0011] Figure 2 This is a top view of the present invention.

[0012] Figure 3 This is a schematic diagram of the structure of an existing semiconductor nitridation and oxidation device. Detailed Implementation

[0013] The present invention will now be described in further detail with reference to the accompanying drawings.

[0014] like Figure 3 As shown, existing semiconductor oxidation nitride (ON) equipment is affected by factors such as the position of the molecular pump port A1 and the spiral shape of the resonant coil A2, resulting in uneven distribution of plasma A3 within the cavity. Consequently, the film thickness deposited on wafer A4 is inconsistent, exhibiting poor uniformity. The resonant coil is connected to an RF sensor, a high-frequency power supply, and an impedance matching device (not shown in the figure) for the high-frequency power supply's impedance or output frequency. The high-frequency power supply provides high-frequency electricity to the resonant coil A2, generating a ring-shaped plasma ring A5 near the resonant coil A2 and along the periphery of the cavity's plasma A3 generation region. The spiral shape of the resonant coil A2 causes the plasma ring to have varying heights from wafer A4 at different locations, and the diffusion rate of plasma A3 towards wafer A4 is also affected by the position of the molecular pump port A1.

[0015] like Figure 1As shown, the present invention discloses a heating system for a semiconductor nitriding oxidation equipment lamp source 6, comprising a process cavity 1, which is a quartz cavity. The process cavity 1 has a process gas inlet 2 at the top and an exhaust port 3 at the bottom. A resonant coil 4 is located at the upper part of the process cavity 1, and the resonant coil 4 is connected to a high-frequency power supply through a matching converter. A wafer stage 5 for placing a wafer 8 is located at the lower part of the process cavity 1. A lamp source 6 is located at the top of the process cavity 1, and the lamp source 6 includes multiple independently controllable LED beads 7 evenly distributed on the top of the process cavity 1. The LED beads 7 are located on the outer side of the top of the process cavity 1. The top of the process cavity 1 is made of a transparent material, and the LED beads 7 are evenly distributed on the top of the process cavity 1 in a ring array, rectangular array, or triangular array.

[0016] This invention involves adding a series of independently controllable light sources 6 to the top of a quartz cavity. The quartz cavity is transparent at the top and frosted around the edges. The light sources 6 project light onto the wafer 8 through the transparent top of the quartz cavity. The frosted quartz has the function of reflecting light (electromagnetic waves), locking the incident light within the cavity for continuous reflection, increasing the light density, and achieving rapid heating and uniformity compensation of the wafer 8.

[0017] The lamp source 6 preferably emits near-infrared light (wavelength 800-2500nm). The controller individually controls each lamp source 6, turning on the lamp source 6 in areas with lower film thickness corresponding to the upper side of the cavity, and turning off the lamp source 6 in other areas, such as... Figure 2 As shown, adjusting the number of lamp sources 6 turned on according to uniformity provides energy compensation to the wafer, which can significantly improve the uniformity of the oxide nitride film.

[0018] The lamp source 6 of this invention uses a ring array of lamp beads 7. Each lamp bead 7 can be independently controlled by a controller. Based on the thickness distribution of the wafer thin film, the lamp source 6 is switched on and off in the corresponding area. The lamp source 6 can be, but is not limited to, infrared light. The arrangement of the lamp source 6 is not limited to a ring; it can be square or triangular, etc.

[0019] The above description is merely an embodiment of this utility model and does not limit the patent scope of this utility model. Any equivalent structural or procedural transformations made based on the description and drawings of this utility model, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this utility model.

Claims

1. A lamp source heating system for a semiconductor nitride oxidation equipment, comprising a process chamber, characterized in that: The top of the process cavity is provided with a light source, which includes multiple independently controllable LED beads evenly distributed on the top of the process cavity; the LED beads are evenly distributed on the top of the process cavity in a ring array, rectangular array or triangular array.

2. The lamp source heating system for a semiconductor nitride oxidation device according to claim 1, characterized in that: The LED beads are located on the outer top of the process cavity, and the top of the process cavity is made of a transparent material.

3. The lamp source heating system for a semiconductor nitride oxidation device according to claim 1, characterized in that: The process chamber has a process gas inlet at the top and an exhaust port at the bottom. A resonant coil is located at the upper part of the process chamber and is connected to a high-frequency power supply through a matching device. A wafer stage for placing wafers is located at the lower part of the process chamber.

4. The lamp source heating system for a semiconductor nitride oxidation device according to claim 1, characterized in that: The process cavity is a quartz cavity.

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