All-solid-state inorganic electrochromic glass structure

By setting insulating structures and stepped laser etching grooves on both sides of the electrochromic layer, combined with high-transparency conductive materials, the problems of leakage and decreased conductivity in all-solid-state inorganic electrochromic glass during laser etching are solved, achieving more efficient color-changing efficiency and a more stable electrochromic layer.

CN223551990UActive Publication Date: 2025-11-14ANHUI ZHIYUN NEW MATERIAL TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202423275812.5
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-12-30
Publication Date
2025-11-14
Estimated Expiration
2034-12-30

AI Technical Summary

Technical Problem

Existing all-solid-state inorganic electrochromic glass is prone to leakage and decreased conductivity during laser etching, especially due to the difficulty in controlling the laser etching tank, which affects the industrialization process.

Method used

Insulating structures are set on both sides of the electrochromic layer, and a stepped laser etching groove design is adopted. The conductive layer is prepared by combining APCVD and PVD processes to ensure uniform electric field distribution and prevent unnecessary migration of lithium ions. A high-transparency conductive material is used to protect the electrochromic layer.

Benefits of technology

It improves color-changing efficiency and response speed, enhances the stability and safety of electrochromic layers, expands the process window, reduces leakage current, and improves product durability and reliability.

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Abstract

The utility model discloses an all-solid-state inorganic electrochromic glass structure which comprises a glass substrate and further comprises a functional layer installed on the glass substrate, insulation structures are arranged on the upper side and the lower side of the electrochromic layer respectively, a first laser etching groove, a second laser etching groove and a third laser etching groove are formed in the functional layer, and the first laser etching groove, the second laser etching groove and the third laser etching groove are formed in the functional layer. And a conductive structure is arranged in the functional layer. According to the utility model, firstly, through the arrangement of the insulation structure, migration of lithium ions in the electrochromic material is facilitated, unnecessary electron migration is prevented, and movement of the lithium ions on a specified path is ensured, so that the color changing efficiency and the response speed are improved, secondly, the FTO prepared by APCVD is adopted as the first conductive layer, laser is not easy to cut through, a process window is larger, and the color changing efficiency and the response speed are improved. And finally, the first laser etching groove adopts a step-shaped structure, so that lithium ions can be prevented from entering the laser etching grooves, the step fall can be reduced, and the stability and the safety of the electrochromic layer can be kept.
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Description

Technical Field

[0001] This utility model relates to the field of photochromic glass technology, and in particular to an all-solid-state inorganic electrochromic glass structure. Background Technology

[0002] All-solid-state inorganic electrochromic glass is a new type of smart glass material. The existing all-solid-state inorganic electrochromic glass mainly consists of the following parts: glass substrate, first conductive film layer, electrochromic layer, ion transport layer, color-changing storage layer, and second conductive layer.

[0003] In existing technologies, laser etching trenches play a crucial role in all-solid-state inorganic electrochromic glass. They not only ensure the electrical insulation and safety of the electrochromic glass but also enable precise zoning control, allowing the glass to display different patterns and colors in different areas as needed. However, during glass production, the silver paste from the upper busbar can easily seep into the first conductive layer. Since the first laser-etched trench contains electrochromic layer material, lithium entering the electrochromic layer will have some conductivity, reducing the insulation of the first laser-etched trench and causing leakage. Furthermore, when etching the second laser-etched trench, it is easy to penetrate the first conductive layer (ITO), mainly because ITO has a strong attraction to infrared or green laser light. If the process window is not controlled to prevent penetration of ITO, it is very small, which is not conducive to industrialization. Similarly, when etching the third laser-etched trench, it is easy to penetrate both the electrochromic layer and the first conductive layer, causing a decrease in the conductivity of the lower electrode.

[0004] To address the aforementioned shortcomings, an all-solid-state inorganic electrochromic glass structure is provided. Utility Model Content

[0005] The purpose of this invention is to propose an all-solid-state inorganic electrochromic glass structure to solve the above-mentioned problems.

[0006] To achieve the above objectives, the present invention adopts the following technical solution: an all-solid-state inorganic electrochromic glass structure, comprising a glass substrate and a functional layer mounted on the glass substrate. The functional layer consists of a second conductive layer, an electrochromic storage layer, an electrochromic layer, and a first conductive layer distributed from top to bottom. Insulating structures are provided on both the upper and lower sides of the electrochromic layer. The electrochromic layer is isolated from the electrochromic storage layer and the first conductive layer respectively by the insulating structures. A first laser etching groove, a second laser etching groove, and a third laser etching groove are formed in the functional layer. The conductive structure is provided in the functional layer.

[0007] Preferably, the first conductive layer is an indium tin oxide conductive layer, and the second conductive layer is a fluorine-doped tin oxide conductive layer.

[0008] Preferably, the electrochromic storage layer is composed of nickel-tungsten oxide and lithium ions.

[0009] Preferably, the insulating structure includes a first insulating layer and a second insulating layer, wherein the first insulating layer is disposed between the first conductive layer and the electrochromic layer, and the second insulating layer is disposed between the electrochromic layer and the electrochromic storage layer.

[0010] Preferably, the first laser etching trench penetrates the electrochromic layer, the first insulating layer, and the first conductive layer.

[0011] Preferably, the second laser etching trench penetrates the second conductive layer, the electrochromic storage layer, the second insulating layer, the electrochromic layer, and the first insulating layer.

[0012] Preferably, the third laser etching trench penetrates the second conductive layer, the electrochromic storage layer, and the second insulating layer.

[0013] Preferably, the first laser etching groove has a stepped structure, and the opening formed therein gradually decreases from top to bottom.

[0014] Preferably, the conductive structure includes an upper electrode busbar welded to a second conductive layer and a lower electrode busbar filled into a second laser etching trench.

[0015] Preferably, both the upper electrode busbar and the lower electrode busbar are made of silver paste.

[0016] In summary, due to the adoption of the above technical solution, the beneficial effects of this utility model are:

[0017] 1. In this application, by providing insulating structures on both sides of the electrochromic layer, the distribution of the electric field in the electrochromic layer can be precisely controlled. This control facilitates the migration of lithium ions in the electrochromic material, prevents unwanted ion migration, and ensures that ions move along designated paths, thereby improving color-changing efficiency and response speed.

[0018] 2. In this application, the first conductive layer is made of FTO prepared by APCVD, which has high transparency and good conductivity, enabling it to effectively transmit current without significantly affecting the transparency of the glass. At the same time, this material can protect the electrochromic layer from physical damage because it is not easily etched through by lasers, and the process window is relatively large, which helps to improve the durability and reliability of the product.

[0019] 3. In this application, the first laser etching tank adopts a stepped structure, which can prevent lithium ions from entering the laser etching tank, thereby avoiding leakage and helping to maintain the stability and safety of the electrochromic layer. Attached Figure Description

[0020] Figure 1A schematic diagram of the structure of an all-solid-state inorganic electrochromic glass according to an embodiment of the present invention is shown.

[0021] Legend:

[0022] 1. Glass substrate; 2. First conductive layer; 3. Electrochromic layer; 4. First insulating layer; 5. Electrochromic storage layer; 6. Second conductive layer; 7. First laser etching trench; 8. Second laser etching trench; 9. Third laser etching trench; 10. Upper electrode busbar; 11. Lower electrode busbar; 12. Second insulating layer. Detailed Implementation

[0023] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.

[0024] Please see Figure 1 This utility model provides a technical solution: an all-solid-state inorganic electrochromic glass structure, including a glass substrate 1, and a functional layer mounted on the glass substrate 1. The functional layer is composed of a second conductive layer 6, an electrochromic storage layer 5, an electrochromic layer 3, and a first conductive layer 2 distributed from top to bottom. Insulating structures are provided on both the upper and lower sides of the electrochromic layer 3. The electrochromic layer 3 is isolated from the electrochromic storage layer 5 and the first conductive layer 2 by the insulating structures. A first laser etching groove 7, a second laser etching groove 8, and a third laser etching groove 9 are formed in the functional layer. Conductive structures are provided in the functional layer.

[0025] The insulating structure is used to isolate the electrochromic layer 3 from the first conductive layer 2 and the electrochromic storage layer 5, preventing direct short circuits and ensuring that the electrochromic layer 3 works normally under the action of an electric field. Furthermore, the distribution of the electric field in the electrochromic layer 3 can be precisely controlled by the insulating structure. In electrochromic materials, ion migration is necessary for color change. The insulating structure can prevent unwanted ion migration and ensure that ions move along a designated path, thereby improving color change efficiency and response speed.

[0026] Specifically, such as Figure 1As shown, the first conductive layer 2 is an indium tin oxide (ITO) conductive layer, and the second conductive layer 6 is a fluorine-doped tin oxide (FTO) conductive layer. The first conductive layer 2, as the bottom conductive layer of the electrochromic glass structure, is responsible for transmitting current from an external power source to the electrochromic layer 3 to activate the electrochromic material. The second conductive layer 6, located above the electrochromic layer 3, is responsible for transmitting current to the other side of the electrochromic layer 3, working in conjunction with the first conductive layer 2. Together, the first conductive layer 2 and the second conductive layer 6 form the upper and lower conductive paths of the electrochromic layer 3, creating a closed circuit that allows current to flow within the structure.

[0027] Since the first conductive layer 2 is made of FTO prepared by APCVD, it has high transparency and good conductivity, which enables it to effectively transmit current without significantly affecting the transparency of the glass. At the same time, it can protect the electrochromic layer 3 from physical damage, is not easily etched through by laser, and has a large process window.

[0028] In the all-solid-state inorganic electrochromic glass structure, ITO is used as the second conductive layer 6. ITO provides excellent transparency and conductivity. At the same time, the high conductivity of ITO helps to improve the response speed and efficiency of the electrochromic material because it can quickly and uniformly transfer current. It also has good chemical stability and can resist corrosion and oxidation, which helps to protect the electrochromic storage layer 5 from environmental factors.

[0029] The electrochromic storage layer 5 is composed of nickel-tungsten oxide and lithium ions. The nickel-tungsten oxide can be nickel-tungsten, nickel-tungsten-tantalum, nickel-tungsten-niobium, or nickel-tungsten-tin oxides. The main function of the electrochromic storage layer 5 is to store and release lithium ions. These lithium ions migrate to the electrochromic layer 3 under the influence of an electric field, causing a change in transmittance. When the electric field is removed, the electrochromic storage layer 5 retains the lithium ions, thus maintaining the transmittance state of the electrochromic layer 3 without requiring continuous power supply.

[0030] Specifically, such as Figure 1 As shown, the insulating structure includes a first insulating layer 4 and a second insulating layer 12. The first insulating layer 4 is disposed between the first conductive layer 2 and the electrochromic layer 3, and the second insulating layer 12 is disposed between the electrochromic layer 3 and the electrochromic storage layer 5.

[0031] The first insulating layer 4 is located between the first conductive layer 2 and the electrochromic layer 3. Its main function is to isolate these two layers and prevent current from flowing directly from the first conductive layer 2 to the electrochromic layer 3, thereby avoiding short circuits. The first insulating layer 4 helps to maintain a uniform distribution of the electric field in the electrochromic layer 3.

[0032] The second insulating layer 12 is located between the electrochromic layer 3 and the electrochromic storage layer 5. Its main function is to isolate the two layers and prevent current from flowing directly from the electrochromic layer 3 to the electrochromic storage layer 5. The second insulating layer 12 helps to maintain a uniform distribution of the electric field in the electrochromic storage layer 5.

[0033] Specifically, such as Figure 1 As shown, the first laser etching trench 7 penetrates the electrochromic layer 3, the first insulating layer 4, and the first conductive layer 2. The second laser etching trench 8 penetrates the second conductive layer 6, the electrochromic storage layer 5, the second insulating layer 12, the electrochromic layer 3, and the first insulating layer 4. The third laser etching trench 9 penetrates the second conductive layer 6, the electrochromic storage layer 5, and the second insulating layer 12. The first laser etching trench 7 has a stepped structure, and the opening it forms gradually decreases in size from top to bottom.

[0034] Before etching the first laser etching groove 7, three nanofilms—the first conductive layer 2, the first insulating layer 4, and the electrochromic layer 3—have been prepared using APCVD equipment. The first laser etching groove 7 is then fabricated on these three layers. Due to the thickness of the film layers, the laser etching employs a stepped structure. Since lithium ions cannot enter the first laser etching groove 7, leakage current in the first laser etching groove 7 will not occur.

[0035] When preparing the second laser etching groove 8, the first conductive layer 2 needs to be exposed to fill silver paste to prepare the lower electrode busbar 11.

[0036] The third laser etching tank 9 mainly blocks the second conductive layer 6 to prevent short circuits with the first conductive layer 2. Since the first conductive layer 2, the first insulating layer 4, and the electrochromic layer 3 are prepared using APCVD technology, the film is hard and not easily scratched by laser etching. Therefore, the third laser etching tank 9 mainly etches the second conductive layer 6, the electrochromic storage layer 5, and the second insulating layer 12. The three-layer PVD process film is easy to etch, while the lower three-layer APCVD process film is not easy to etch. In this way, the laser etching process window is very large, reducing leakage current.

[0037] APCVD, or Atmospheric Pressure Chemical Vapor Deposition, is a technique used to deposit thin films on substrates. This technique is performed under atmospheric pressure.

[0038] PVD, or Physical Vapor Deposition, is a technique used to deposit thin films on substrates and is widely used in materials science and surface engineering. PVD involves transferring materials from the gas phase to the solid phase to form a thin film on a substrate.

[0039] Specifically, such as Figure 1As shown, the conductive structure includes an upper electrode busbar 10 welded to the second conductive layer 6 and a lower electrode busbar 11 filled into the second laser etching trench 8. Both the upper electrode busbar 10 and the lower electrode busbar 11 are made of silver paste.

[0040] The main function of the upper electrode busbar 10 is to collect the current on the second conductive layer 6 and transmit it to the external circuit. The main function of the lower electrode busbar 11 is to collect the current on the first conductive layer 2 and transmit it to the external circuit. Both the upper electrode busbar 10 and the lower electrode busbar 11 are made of highly conductive materials and silver paste. The lower electrode busbar 11 reduces the resistance loss of the current during transmission.

[0041] The above description of the embodiments enables those skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A solid-state inorganic electrochromic glass structure, comprising a glass substrate (1), characterized in that, It also includes a functional layer mounted on a glass substrate (1). The functional layer consists of a second conductive layer (6), an electrochromic storage layer (5), an electrochromic layer (3), and a first conductive layer (2) distributed from top to bottom. Insulating structures are provided on both the upper and lower sides of the electrochromic layer (3). The electrochromic layer (3) is isolated from the electrochromic storage layer (5) and the first conductive layer (2) by the insulating structures. A first laser etching groove (7), a second laser etching groove (8), and a third laser etching groove (9) are formed in the functional layer. A conductive structure is provided in the functional layer.

2. The all-solid-state inorganic electrochromic glass structure according to claim 1, characterized in that, The first conductive layer (2) is an indium tin oxide conductive layer (ITO), and the second conductive layer (6) is a fluorine-doped tin oxide conductive layer (FTO).

3. The all-solid-state inorganic electrochromic glass structure according to claim 1, characterized in that, The electrochromic storage layer (5) is composed of nickel-tungsten oxide and lithium ions.

4. The all-solid-state inorganic electrochromic glass structure according to claim 1, characterized in that, The insulating structure includes a first insulating layer (4) and a second insulating layer (12). The first insulating layer (4) is disposed between the first conductive layer (2) and the electrochromic layer (3), and the second insulating layer (12) is disposed between the electrochromic layer (3) and the electrochromic storage layer (5).

5. The all-solid-state inorganic electrochromic glass structure according to claim 1, characterized in that, The first laser etching groove (7) penetrates the electrochromic layer (3), the first insulating layer (4) and the first conductive layer (2).

6. The all-solid-state inorganic electrochromic glass structure according to claim 1, characterized in that, The second laser etching groove (8) penetrates the second conductive layer (6), the electrochromic storage layer (5), the second insulating layer (12), the electrochromic layer (3) and the first insulating layer (4).

7. The all-solid-state inorganic electrochromic glass structure according to claim 1, characterized in that, The third laser etching groove (9) penetrates the second conductive layer (6), the electrochromic storage layer (5), and the second insulating layer (12).

8. The all-solid-state inorganic electrochromic glass structure according to claim 5, characterized in that, The first laser etching groove (7) has a stepped structure, and the opening formed therein gradually decreases from top to bottom.

9. The all-solid-state inorganic electrochromic glass structure according to claim 1, characterized in that, The conductive structure includes an upper electrode busbar (10) welded to a second conductive layer (6) and a lower electrode busbar (11) filled into a second laser etching groove (8).

10. The all-solid-state inorganic electrochromic glass structure according to claim 9, characterized in that, Both the upper electrode busbar (10) and the lower electrode busbar (11) are made of silver paste.