Coating source device

Abstract

The utility model belongs to the technical field of semiconductor wafer manufacturing, and discloses a coating source device which comprises a base, a bearing assembly, a supporting frame and an ultrasonic atomization assembly, the bearing assembly is installed on the base and comprises a tray, and the tray is used for adsorbing a wafer; the supporting frame is slidably arranged on the base in the first direction. The ultrasonic atomization assembly is arranged on the supporting frame in a sliding mode in the second direction and located above the wafer, the ultrasonic atomization assembly comprises a liquid source part, an atomization part and a nozzle part, the liquid source part is communicated with the atomization part through a pipeline, the nozzle part is communicated with the atomization part, the atomization part can conduct ultrasonic atomization treatment on a liquid source in the liquid source part, and the nozzle part can conduct ultrasonic atomization treatment on the liquid source in the liquid source part. And spraying the liquid source subjected to the ultrasonic atomization treatment to the surface of the wafer through the nozzle piece. When the source coating device conducts source coating treatment on the surface of the wafer, the ultrasonic atomization assembly can slide in the second direction to adjust the position, located above the wafer, of the nozzle piece, and the automation degree of coating is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor wafer manufacturing, especially to a source coating device. BACKGROUND

[0002] The diffusion process in wafer processing refers to doping trivalent or pentavalent elements on the surface of a silicon wafer to change the conductivity type and resistivity of the silicon wafer. In the prior art, a brush or a pen is usually used to coat such a diffusion source. That is, the diffusion source is first coated on a wafer using a pen, then the wafer is rotated to uniformly distribute the diffusion source on the wafer, and finally the wafer is heated to complete the source coating. This coating method can cause the concentration of the diffusion source to be high in some areas and low in other areas on the wafer surface. In addition, if the brush or pen loses hair, it can also cause the yield of the wafer to decrease. Furthermore, this coating method has low automation and low coating efficiency. SUMMARY

[0003] The utility model aims at providing a source coating device to solve the problem of low automation and low coating efficiency of the existing coating method. The source coating method can effectively improve the coating efficiency.

[0004] To achieve this purpose, the utility model adopts the following technical solutions:

[0005] The source coating device comprises:

[0006] a base;

[0007] a supporting assembly installed on the base, the supporting assembly comprising a tray for adsorbing a wafer;

[0008] a support frame slidingly arranged on the base along a first direction;

[0009] an ultrasonic atomization assembly slidingly arranged on the support frame along a second direction, and the ultrasonic atomization assembly is located above the wafer, the ultrasonic atomization assembly comprising a liquid source piece, an atomization piece, and a nozzle piece, the liquid source piece being in communication with the atomization piece through a pipeline, the nozzle piece being in communication with the atomization piece, and the atomization piece being capable of atomizing the liquid source in the liquid source piece, so that the atomized liquid source is sprayed onto the surface of the wafer through the nozzle piece.

[0010] Preferably, the atomization piece comprises a shell, an ultrasonic piece, and a gas supply piece, the liquid source piece passing through the shell and being in communication with an ultrasonic cavity in the shell through a pipeline, the gas supply piece being arranged between the outlet of the ultrasonic cavity and the nozzle piece, and the ultrasonic piece being installed on the shell and performing ultrasonic atomization on the liquid source in the ultrasonic cavity.

[0011] As preferred, the nozzle piece comprises a guide nozzle, the guide nozzle has a longitudinal section in a conical shape, a small end of the guide nozzle is communicated with the atomizing piece, and a large end of the guide nozzle is opposite to the wafer.

[0012] As preferred, the nozzle piece comprises a guide nozzle, the guide nozzle has a longitudinal section in a conical shape, a small end of the guide nozzle is communicated with the atomizing piece, and a large end of the guide nozzle is opposite to the wafer.

[0013] As preferred, the nozzle piece further comprises a diffusion pipe, the diffusion pipe is connected with an end of the guide nozzle away from the atomizing piece, the diffusion pipe comprises a main pipe communicated with the guide nozzle and a plurality of branch pipes uniformly arranged on an outer periphery of the main pipe and communicated with the main pipe, and a side of the branch pipe close to the wafer is provided with a plurality of diffusion holes uniformly distributed in an axial direction.

[0014] As preferred, a plurality of the ultrasonic atomizing assemblies are uniformly distributed above the wafer.

[0015] As preferred, a side of the base is provided with a guide groove, the guide groove is provided at a bottom with a plurality of first threaded holes spaced apart in a first direction, and the support frame can be locked in the first threaded holes through first threaded members.

[0016] As preferred, the support frame is provided with a plurality of second threaded holes spaced apart in a second direction, and the ultrasonic atomizing assembly can be locked in the second threaded holes through second threaded members.

[0017] As preferred, the supporting assembly further comprises a protective ring cover, the protective ring cover is mounted on the base and spaced apart to surround a periphery of the tray, and a height of the protective ring cover is greater than a height of the tray.

[0018] The coating source device provided by the utility model has the advantages that the distance between the ultrasonic atomizing assembly and the wafer can be adjusted by sliding the support frame in the first direction according to needs, the position of the nozzle piece above the wafer can be adjusted by sliding the ultrasonic atomizing assembly in the second direction, the coating effect is more uniform, manual coating is not needed, the automation degree of coating is improved, the problem of hair dropping of a brush or a pen does not occur, and the yield of wafers is prevented from decreasing. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 is a whole structure schematic view of the coating source device provided by the utility model embodiment;

[0020] Figure 2 is a structure schematic view of the guide nozzle of one implementation provided by the utility model embodiment;

[0021] Figure 3is a structural schematic view of a guide mouth provided by another embodiment of the present application;

[0022] Figure 4 is a structural schematic view of a diffusion pipe provided by an embodiment of the present application.

[0023] in the figure:

[0024] 100, base;

[0025] 200, atomized diffusion source;

[0026] 300, support frame;

[0027] 410, liquid source; 420, atomizing part; 421, ultrasonic part; 422, air supply part; 430, nozzle part; 431, guide mouth; 432, diffusion pipe; 4321, main connecting pipe; 4322, branch connecting pipe; 43221, diffusion hole; 500, wafer; 600, second threaded part; 700, protection ring cover. DETAILED DESCRIPTION

[0028] The utility model will be further explained in detail below in combination with the drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the utility model, and not to limit the utility model. In addition, it should be noted that, in order to facilitate the description, only the part related to the utility model is shown in the drawings, not all structures.

[0029] In the description of the utility model, unless otherwise explicitly specified and limited, the terms "connected", "connected", "fixed" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated, it can be mechanically connected, or it can be electrically connected, it can be directly connected, or it can be indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction relationship of two elements. For ordinary skilled in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.

[0030] In the utility model, unless otherwise explicitly specified and limited, the first feature "on" or "below" the second feature can include that the first and second features are in direct contact, or the first and second features are not in direct contact but are in contact through another feature between them. Moreover, the first feature "on", "above" and "above" the second feature includes that the first feature is directly above and obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" the second feature includes that the first feature is directly below and obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0031] In the description of the present embodiment, the terms "upper", "lower", "right", "left", and the like, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are only used to distinguish in the description, and have no special meaning.

[0032] The present embodiment provides a coating source device, which aims to solve the problems of low automation degree and low coating efficiency of the existing coating method, and effectively improves the coating efficiency.

[0033] Referring to Figures 1-4 The coating device comprises a base 100, a supporting assembly, a support frame 300, and an ultrasonic atomization assembly. The supporting assembly is installed on the base 100 and comprises a tray for adsorbing a wafer 500. The support frame 300 is slidingly arranged on the base 100 along a first direction (Z-axis direction). The ultrasonic atomization assembly is slidingly arranged on the support frame 300 along a second direction (X-axis direction) and is located above the wafer 500. The ultrasonic atomization assembly comprises a liquid source piece 410, an atomization piece 420, and a nozzle piece 430. The liquid source piece 410 is in communication with the atomization piece 420 through a pipeline. The nozzle piece 430 is in communication with the atomization piece 420. The atomization piece 420 can perform ultrasonic atomization treatment on the liquid source in the liquid source piece 410, so that the liquid source after the ultrasonic atomization treatment is sprayed to the surface of the wafer 500 through the nozzle piece 430.

[0034] When the wafer 500 surface is treated by the coating source device, the distance between the ultrasonic atomization assembly and the wafer 500 can be adjusted by sliding the support frame 300 along the first direction as needed. The position of the nozzle piece 430 above the wafer 500 can be adjusted by sliding the ultrasonic atomization assembly along the second direction, so that the coating effect is more uniform. Manual coating is not required, which improves the automation degree of coating. The problem of hair loss of a brush or a pen does not occur, which avoids the yield reduction of the wafer 500. The atomization piece 420 performs atomization treatment on the liquid source in the liquid source piece 410, and the liquid source after the atomization treatment is sprayed to the surface of the wafer 500 through the nozzle piece 430, so that the coating quality is high.

[0035] In the embodiment, the atomizing member 420 comprises a shell, an ultrasonic member 421 and a gas supply member 422, the liquid source member 410 passes through the shell and communicates with the ultrasonic cavity in the shell through a pipe, the gas supply member 422 is arranged between the outlet of the ultrasonic cavity and the nozzle member 430, and the ultrasonic member 421 is mounted on the shell and performs ultrasonic atomization on the liquid source in the ultrasonic cavity. By arranging the shell, the shell protects the ultrasonic cavity and the gas supply member 422 from external impact; the gas supply member 422 is arranged between the outlet of the ultrasonic cavity and the nozzle member 430, so that the atomized liquid source can be pushed out of the nozzle member 430.

[0036] Optionally, the nozzle member 430 comprises a guide nozzle 431, the longitudinal section of the guide nozzle 431 is conical, the small end of the guide nozzle 431 communicates with the atomizing member 420, and the large end of the guide nozzle 431 faces the wafer 500, as shown in Figure 2 , and the atomized diffusion source 200 is sprayed in a radial or linear manner. Alternatively, the large end of the guide nozzle 431 communicates with the atomizing member 420, and the small end of the guide nozzle 431 faces the wafer 500, as shown in Figure 3 , and the atomized diffusion source 200 is sprayed in a radial or linear manner. In actual design, whether the large end or the small end of the guide nozzle 431 faces the wafer 500 can be determined according to the size of the wafer 500 (such as 8 inches or 12 inches), and the spraying mode of the diffusion source can be determined by arranging multiple vertical or inclined spray sub-pipes in the guide nozzle 431 according to actual needs.

[0037] As a preferred, the nozzle member 430 further comprises a diffusion pipe 432, the diffusion pipe 432 is connected with the end of the guide nozzle 431 away from the atomizing member 420, the diffusion pipe 432 comprises a main pipe 4321 communicating with the guide nozzle 431 and multiple sub-pipes 4322 uniformly arranged on the outer periphery of the main pipe 4321 and communicating with the main pipe 4321, and the side of the sub-pipe 4322 close to the wafer 500 is provided with multiple diffusion holes 43221 uniformly distributed along the axial direction. During source coating, the atomized liquid source enters the main pipe 4321 through the guide nozzle 431, then enters the diffusion pipe through the main pipe 4321, and is sprayed to the wafer 500 through the diffusion holes, thereby improving the uniformity of the diffusion source from the center to the edge of the wafer 500.

[0038] In the embodiment, multiple ultrasonic atomizing assemblies can be arranged, and the multiple ultrasonic atomizing assemblies are uniformly distributed above the wafer 500. For example, three ultrasonic atomizing assemblies are arranged, and the three ultrasonic atomizing assemblies are uniformly distributed along the circumference of the wafer 500, then the length of the sub-pipe 4322 is determined according to needs, so that the diffusion pipe is as uniformly distributed as possible on the upper surface of the wafer 500, and the diffusion source is ensured to be deposited on the entire surface of the wafer 500. In other embodiments, the ultrasonic atomizing assembly can also be arranged as four or five, and the like, which can be determined according to needs.

[0039] Optionally, the side of the base 100 is provided with a guide groove, the bottom of the guide groove is provided with a plurality of first threaded holes arranged at intervals along a first direction, the support frame 300 can be locked in the first threaded holes through first threaded members; the support frame 300 is provided with a plurality of second threaded holes arranged at intervals along a second direction, the ultrasonic atomization assembly can be locked in the second threaded holes through second threaded members 600. With this arrangement, the positions of the support frame 300 and the ultrasonic atomization assembly can be adjusted, and the support frame 300 and the ultrasonic atomization assembly can be conveniently disassembled.

[0040] To protect the wafer 500 from external pollution, the supporting assembly further comprises a protective ring cover 700, which is installed on the base 100 and spacedly arranged around the side of the tray, and the height of the protective ring cover 700 is greater than the height of the tray.

[0041] As a preferred embodiment, the source coating device further comprises a mechanical hand, which is arranged on the base 100 and located at one side of the supporting assembly, and is used for transferring the wafer 500.

[0042] The embodiment also provides a source coating method, which adopts the source coating device described above, and the source coating method comprises the following steps:

[0043] S1, providing a wafer 500;

[0044] S2, placing the wafer 500 in the tray after cleaning and spin-drying the wafer 500;

[0045] S3, performing ultrasonic atomization treatment on the liquid source to atomize the liquid source into micron-sized droplets;

[0046] S4, introducing a carrier gas, and the carrier gas pushes the droplets to deposit on the wafer 500.

[0047] The source coating method described above can effectively improve the coating uniformity and the coating quality by performing ultrasonic atomization treatment on the liquid source to atomize the liquid source into micron-sized droplets and then depositing the droplets on the wafer 500 through the carrier gas, so that the wafer 500 has a better yield.

[0048] In the prior art, when the source is coated, the wafer 500 rotates at a high speed, 90% of the diffusion source is wasted in the process of rotation, and the utilization rate of the diffusion source is only about 10%. In the embodiment, after the droplets are deposited on the wafer 500, the tray is driven to rotate by the power member, so that the wafer 500 rotates. After the source coating is completed, the wafer 500 is rotated at a low speed, so that the droplets on the surface of the wafer 500 are further homogenized, and unnecessary waste of the diffusion source is avoided, and the utilization rate is improved.

[0049] Further, after the wafer 500 is rotated, the wafer 500 is heated and dried to prepare for subsequent other process treatments. Optionally, when the wafer 500 is heated and dried, an infrared dryer with forced exhaust is used.

[0050] Obviously, the above embodiments of the present application are merely examples for clearly illustrating the present application, and are not intended to limit the embodiments of the present application. For those skilled in the art, various obvious changes, re-adjustments and substitutions can be made without departing from the protection scope of the present application. Here, it is not necessary and impossible to exhaust all the embodiments. Any modification, equivalent substitution and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application claims.

Claims

1. A paint source device, characterized by The utility model relates to a wafer processing device, including: a base (100); a supporting assembly installed on the base (100), the supporting assembly includes a tray for adsorbing a wafer (500); a support frame (300) slidingly arranged on the base (100) along a first direction; an ultrasonic atomization assembly slidingly arranged on the support frame (300) along a second direction, and the ultrasonic atomization assembly is located above the wafer (500), the ultrasonic atomization assembly includes a liquid source piece (410), an atomization piece (420) and a nozzle piece (430), the liquid source piece (410) is communicated with the atomization piece (420) through a pipeline, the nozzle piece (430) is communicated with the atomization piece (420), the atomization piece (420) can perform ultrasonic atomization treatment on the liquid source in the liquid source piece (410), so that the liquid source after ultrasonic atomization treatment is sprayed to the surface of the wafer (500) through the nozzle piece (430).

2. The coater source device of claim 1, wherein The atomization piece (420) includes a shell, an ultrasonic piece (421) and a gas supply piece (422), the liquid source piece (410) passes through the shell and is communicated with an ultrasonic cavity in the shell through a pipeline, the gas supply piece (422) is arranged between the outlet of the ultrasonic cavity and the nozzle piece (430), and the ultrasonic piece (421) is installed on the shell and performs ultrasonic atomization treatment on the liquid source in the ultrasonic cavity.

3. The coater source device of claim 1, wherein The nozzle piece (430) includes a guide nozzle (431), the longitudinal section of the guide nozzle (431) is conical, the small end of the guide nozzle (431) is communicated with the atomization piece (420), and the large end of the guide nozzle (431) is opposite to the wafer (500).

4. The coater source device of claim 1, wherein The nozzle piece (430) includes a guide nozzle (431), the longitudinal section of the guide nozzle (431) is conical, the large end of the guide nozzle (431) is communicated with the atomization piece (420), and the small end of the guide nozzle (431) is opposite to the wafer (500).

5. The coater source device according to claim 3 or 4, characterized in that The nozzle piece (430) further includes a diffusion pipe (432), the diffusion pipe (432) is connected with one end of the guide nozzle (431) away from the atomization piece (420), the diffusion pipe (432) includes a main pipe (4321) communicated with the guide nozzle (431) and a plurality of branch pipes (4322) uniformly arranged on the outer periphery of the main pipe (4321) and communicated with the main pipe (4321), and a plurality of diffusion holes (43221) are uniformly distributed in the axial direction on the side of the diffusion pipe (432) close to the wafer (500).

6. The coater source device of claim 1, wherein A plurality of ultrasonic atomization assemblies are arranged, and the plurality of ultrasonic atomization assemblies are uniformly distributed above the wafer (500).

7. The coater source device of claim 1, wherein The side surface of the base (100) is provided with a guide groove, the bottom of the guide groove is provided with a plurality of first threaded holes arranged at intervals along the first direction, and the support frame (300) can be locked in the first threaded holes through first threaded members.

8. The coater source device of claim 1, wherein The support frame (300) is provided with a plurality of second threaded holes arranged at intervals in a second direction, and the ultrasonic atomization assembly is locked in the second threaded holes by second threaded members (600).

9. The coater source device of claim 1, wherein, The supporting assembly further comprises a protective ring cover (700) which is installed on the base (100) and arranged at intervals around the periphery of the tray, and the height of the protective ring cover (700) is greater than the height of the tray.

Images