Polishing head and polishing equipment
By designing an integrated polishing head, flexible switching between gas, water, and vacuum is achieved, solving the problem that traditional polishing heads cannot output multiple media simultaneously, improving polishing efficiency and adaptability, and reducing production costs.
Patent Information
- Application Number
- CN202423213421.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-25
- Publication Date
- 2025-11-18
- Estimated Expiration
- 2034-12-25
AI Technical Summary
Existing polishing head designs can only output one of gas, water, or vacuum, which cannot simultaneously meet the needs of multiple media in the polishing process. This results in insufficient adaptability and flexibility, increasing equipment complexity and production costs.
Design a polishing head that includes a main channel and multiple branch channels, combined with a driver and multiple supply channels, and can flexibly switch between output media or vacuum. Alignment of different supply channels with the main channel can be achieved by rotating the axis, and gas, water and vacuum supply can be integrated.
It improves the adaptability and flexibility of the polishing head, optimizes the polishing process, enhances the flatness of the wafer surface and polishing efficiency, reduces ineffective operations and downtime, and lowers equipment complexity and production costs.
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Figure CN223558156U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the field of semiconductor wafer production especially relates to a polishing head and polishing equipment. BACKGROUND
[0002] Wafer polishing process is a key step in semiconductor manufacturing for improving wafer surface flatness. This process combines chemical etching and mechanical grinding to achieve smooth processing of wafer surface, so as to eliminate damage and defects generated in previous processes. The surface quality of wafer is directly related to the accuracy of subsequent processes such as photolithography, etching, and the performance of devices, so the polishing process plays a crucial role in semiconductor manufacturing.
[0003] In existing polishing equipment, the polishing head is the core component for achieving wafer surface polishing. Traditional polishing head design often only has a single function, such as being able to output only one of gas, water, and vacuum. This limits the adaptability of the polishing head in actual application, because multiple media such as gas, water, and vacuum may be needed simultaneously in the polishing process. For example, the polishing head needs water to remove debris and impurities adhering to itself during polishing, maintaining the cleanliness of the polishing surface, needs vacuum to adsorb the wafer, ensuring its stability during polishing, and needs gas to eliminate the adsorption effect of the wafer from the polishing head for easy removal of the wafer.
[0004] Due to the limitations of traditional polishing head design, existing polishing equipment cannot simultaneously meet the needs of gas, water, and vacuum in the polishing process. This limitation results in insufficient adaptability and flexibility of the polishing head, limiting the optimization space of the polishing process. In actual production, this means that one demand is met by another complex means while other demands cannot be met by the polishing head itself, which increases the complexity of the polishing equipment and increases production costs. Therefore, developing a multifunctional polishing head capable of simultaneously outputting gas, water, and vacuum is of great significance for improving the flexibility and efficiency of wafer polishing process. SUMMARY
[0005] The utility model provides a kind of polishing head and polishing equipment, can enhance the adaptability and flexibility of polishing head.
[0006] The technical scheme of the utility model is as follows:
[0007] In a first aspect, the utility model provides a kind of polishing head, and the polishing head includes:
[0008] First body, the first body has main channel and multiple branch channels branching out from the main channel, the main channel forms main channel opening in the first surface of the first body, and the multiple branch channels form a plurality of branch channel openings in the second surface of the first body respectively.
[0009] a second body having at least two supply channels forming respective at least two supply channel openings at a mating surface of the second body, the mating surface forming a sealing fit with the first surface of the first body;
[0010] wherein the first body and the second body are rotatable relative to each other about a rotation axis perpendicular to the mating surface, such that each supply channel opening is alignable with the main channel opening, and when one supply channel opening is aligned with the main channel opening, the at least two supply channel openings other than the one supply channel opening are closed by the first surface of the first body.
[0011] In some optional examples, the polishing head further comprises a driver for driving the first body to rotate relative to the second body.
[0012] In some optional examples, the second body has a first supply channel for supplying gas, a second supply channel for supplying water, and a third supply channel for supplying vacuum.
[0013] In some optional examples, the first supply channel is provided with a first valve for controlling the flow of gas supplied by the first supply channel.
[0014] In some optional examples, the first supply channel is further provided with a first flow meter for providing the flow of gas flowing in the first supply channel.
[0015] In some optional examples, the second supply channel is provided with a second valve for controlling the flow of water supplied by the second supply channel.
[0016] In some optional examples, the second supply channel is further provided with a second flow meter for providing the flow of water flowing in the second supply channel.
[0017] In some optional examples, the third supply channel is provided with a third valve for controlling the negative pressure of vacuum supplied by the third supply channel.
[0018] In some optional examples, the third supply channel is further provided with a pressure gauge for providing the negative pressure in the third supply channel.
[0019] In a second aspect, the utility model provides a kind of polishing equipment, and the polishing equipment includes the polishing head according to first aspect.
[0020] The utility model provides a kind of polishing head and polishing equipment, by flexible switching different supply passage opening and main passage opening, can quickly adjust output medium or vacuum, to adapt to the specific needs of polishing process.This design improves the adaptability and flexibility of polishing head, optimizes the polishing process, improves the flatness of wafer surface and polishing efficiency.For example, in different stages of polishing, polishing head can supply water to clean or supply gas to facilitate wafer removal respectively.Precise passage selection mechanism reduces invalid operation, improves production efficiency, and because polishing head can independently control each supply passage opening, can quickly switch medium or vacuum, reduce downtime.In addition, polishing head can simultaneously meet the needs of gas, water and vacuum, without additional equipment or complex piping system, reduce the complexity of equipment and production cost, reduce production interruption, help to reduce cost. BRIEF DESCRIPTION OF DRAWINGS
[0021] Figure 1 The utility model provides the three-dimensional exploded schematic diagram of polishing head. DETAILED DESCRIPTION
[0022] The technical solutions of the utility model will be described clearly and completely in combination with the drawings in the utility model.
[0023] In the field of semiconductor manufacturing, wafer polishing process is a key step to improve wafer surface flatness, through the combination of chemical corrosion and mechanical grinding, to realize the smooth processing of wafer surface, to eliminate the damage and defects generated in the previous process.The quality of wafer surface directly affects the accuracy of subsequent photoetching, etching and other processes and the performance of device, so that polishing process plays a vital role in semiconductor manufacturing.However, in the existing polishing equipment, polishing head as the core component to realize wafer surface polishing, its design often only has single function, such as only can output one of gas, water and vacuum.This design limits the adaptability of polishing head in actual application, because multiple media such as gas, water and vacuum may be needed in polishing process.For example, polishing head needs water to remove debris and impurities adhered to itself in polishing process, to keep the polishing surface clean;It needs vacuum to adsorb wafer, to ensure its stability in polishing process;It needs gas to eliminate the adsorption effect of wafer, to facilitate wafer removal from polishing head.Due to the limitation of traditional polishing head design, the existing polishing equipment cannot simultaneously meet the needs of gas, water and vacuum in polishing process, and this limitation leads to insufficient adaptability and flexibility of polishing head, limits the optimization space of polishing process.In actual production, this means that in the case of meeting one demand, other demands must be met through additional complex means, and all demands cannot be met by polishing head itself, which increases the complexity of polishing equipment and production cost.
[0024] Based on this, referring to Figure 1 , the utility model embodiment provides a polishing head 10, this polishing head 10 can include the first body 11 and the second body 12 of cylindrical as exemplarily shown in Figure 1 .
[0025] The first body 11 has a main channel 11M and a plurality of branch channels 11B branching out from the main channel 11M, here the main channel 11M is schematically shown by grid-filled areas, and the plurality of branch channels 11B is schematically shown by dot-filled areas, in addition, four branch channels 11B are exemplarily shown in Figure 1 , but the utility model is not limited to this, the number of branch channels 11B can be more, the main channel 11M forms a main channel opening 111A in the lower surface of the first surface 111 of the first body 11, i.e. Figure 1 . Figure 1 The plurality of branch channels 11B forms a plurality of branch channel openings 112A in the upper surface of the second surface 112 of the first body 11, i.e. Figure 1 .
[0026] The second body 12 has at least two supply channels 12S, here three supply channels 12S are exemplarily shown in Figure 1 , the at least two supply channels 12S form a corresponding at least two supply channel openings 121A in the mating surface 121 of the second body 12, which forms a sealing fit with the first surface 111 of the first body 11. Here it needs to be explained that, Figure 1 , shown in the exploded perspective view of the polishing head 10 for the purpose of clarity, that is to say, in fact, the first body 11 and the second body 12 of the polishing head 10 are tightly fitted together, and the fitted surfaces of the first body 11 and the second body 12 are the first surface 111 of the first body 11 and the mating surface 121 of the second body 12 respectively.
[0027] The first body 11 and the second body 12 can be rotated relative to each other around a rotation axis X perpendicular to the mating surface 121, so that each supply channel opening 121A can be aligned with the main channel opening 111A, as shown in the case in Figure 1 , the leftmost supply channel opening 121A is aligned with the main channel opening 111A, while when the first body 11 is counterclockwise rotated along the direction shown in Figure 1 , the middle supply channel opening 121A and the rightmost supply channel opening 121A will be aligned with the main channel opening 111A in turn, and as shown in Figure 1In particular, when the leftmost one of the supply passage openings 121A is aligned with the main passage opening 111A, the other supply passage openings 121A (i.e. Figure 1 the middle one and the rightmost one of the supply passage openings 121A in FIG. 11) of the at least two supply passage openings 121A other than the leftmost one of the supply passage openings 121A are closed by the first surface 111 of the first body 11.
[0028] By aligning different supply passage openings 121A with the main passage opening 111A, the polishing head 10 can flexibly supply different media or vacuum through the plurality of branch passage openings 112A to the second surface 112 of the first body 11, so that the polishing head 10 can quickly adjust the output medium or vacuum according to the specific needs of the polishing process, thereby improving the adaptability and flexibility of the polishing head 10. Since the polishing head 10 can switch the output of gas, water and vacuum, the polishing process can be optimized to improve the flatness of the wafer surface and the polishing efficiency. For example, water may be needed to complete cleaning in some polishing stages, and gas may be needed to make it easier to take out the wafer at the end of polishing. The design of the polishing head 10 can meet these needs, thereby optimizing the entire polishing process. The precise passage selection mechanism reduces invalid operations in the polishing process and improves production efficiency. Since the polishing head 10 can independently control each supply passage opening 121A, it can quickly switch media or vacuum as needed, reducing downtime caused by adjusting equipment. Since the polishing head 10 can simultaneously meet the needs of gas, water and vacuum, there is no need for additional equipment or complex piping systems to supply different media, thereby reducing the complexity of the equipment and production costs. In addition, reducing production interruptions due to equipment adjustments also helps to reduce costs.
[0029] In some embodiments of the present application, referring to Figure 1 The polishing head 10 can further include a driver 13 for driving the first body 11 to rotate relative to the second body 12.
[0030] By driving the first body 11 to rotate relative to the fixed second body 12 through the driver 13, different supply channel openings 121A can be quickly aligned with the main channel opening 111A, allowing the polishing head 10 to quickly switch between different supply sources such as gas, water, and vacuum to adapt to changing needs during the polishing process, thereby improving the response speed and operational flexibility of the polishing head. At the same time, the second body 12 is connected to the supply sources of gas, water, and vacuum, and since it can remain stationary, it will not affect the supply. In addition, since the second body 12 is connected to the supply sources of gas, water, and vacuum and remains stationary, this stable connection can ensure the continuity and stability of the medium supply, and at the same time, the rotation of the first body 11 realizes switching, ensuring accurate alignment during different medium supply processes, thereby improving the accuracy and consistency of the polishing process. Finally, the use of the driver 13 simplifies the operation process, and the operator does not need to manually rotate the first body 11, but only needs to control it accurately through the driver 13. This automated operation reduces the possibility of human error and improves the convenience and safety of operation.
[0031] In some embodiments of the present application, referring to Figure 1 The second body 12 can have a first supply channel 12S1 for supplying gas, a second supply channel 12S2 for supplying water, and a third supply channel 12S3 for supplying vacuum.
[0032] By integrating the first supply channel 12S1 for supplying gas, the second supply channel 12S2 for supplying water, and the third supply channel 12S3 for supplying vacuum in the second body 12, the polishing head 10 can meet the needs of different media and vacuum during the polishing process. This integrated design simplifies the configuration of the polishing equipment, reduces the need for external pipelines and connections, and thus reduces the complexity and installation cost of the equipment. By integrating different media and vacuum supply channels, the required media and vacuum can be easily switched without the need for frequent external connections. This design simplifies the operation process, reduces the difficulty of operation, and improves the convenience and safety of operation.
[0033] In some embodiments of the present application, referring to Figure 1 A first valve V1 can be provided on the first supply channel 12S1, and the first valve V1 is used to control the flow of gas supplied by the first supply channel 12S1.
[0034] By setting the first valve V1 on the first supply channel 12S1, the flow rate of the supplied gas (such as nitrogen) can be precisely controlled, which is crucial for processes such as drying the wafer surface after polishing. For example, when there is liquid residue on the wafer surface, by adjusting the first valve V1, the gas flow rate can be adjusted according to the amount of liquid residue to achieve the best drying effect. When there is more liquid residue, using a larger gas flow rate can speed up the evaporation speed of the liquid, thereby improving the drying efficiency. This adjustable flow control allows the polishing head 10 to adapt to different post-polishing conditions, ensuring that the wafer surface is quickly and thoroughly dried. By precisely controlling the gas flow rate, the polishing head 10 can use a smaller gas flow rate when there is less liquid residue, thereby reducing energy consumption. This energy-saving operation not only reduces production costs, but also meets environmental protection requirements and reduces industrial gas emissions. By effectively blowing dry the wafer surface, potential damage to the wafer surface caused by liquid residue, such as corrosion or contamination, can be prevented, which helps to improve the quality of the polished wafer and lays a good foundation for subsequent semiconductor manufacturing processes. The setting of the first valve V1 allows the operator to flexibly adjust the gas flow rate according to the actual situation to adapt to different polishing conditions and requirements, which improves the applicability of the polishing head 10 and enables it to cope with changing production environments. Precise control of gas flow rate helps to prevent equipment damage or safety accidents that may be caused by excessive gas pressure. Through the first valve V1, the operator can safely control the gas supply to ensure the safety of the polishing process. By integrating gas flow control, the polishing head 10 can reduce additional drying steps after polishing and optimize the entire production process, which helps to shorten the production cycle and improve the overall efficiency of the production line.
[0035] In some embodiments of the present application, referring to Figure 1 , the first supply channel 12S1 can also be provided with a first flow meter M1, which is used to provide the flow rate of the gas flowing in the first supply channel 12S1.
[0036] By setting the first valve V1 and the first flow meter M1 on the first supply channel 12S1, the polishing head 10 can accurately control and monitor the flow of the supplied gas. This precise flow control is crucial for the use of gas during the polishing process, such as when it is necessary to blow dry the wafer surface after polishing to accelerate the evaporation speed of the liquid. The first valve V1 can be adjusted according to the flow data provided by the first flow meter M1 to ensure that the gas flow meets the process requirements. The precise flow data provided by the first flow meter M1 helps to ensure the consistency of each polishing process and improve the repeatability of the process, which is crucial for maintaining the quality of the wafer surface and improving the yield, especially in semiconductor manufacturing, where precision and consistency are extremely high. By precisely controlling the gas flow, the polishing head 10 can ensure the quality of the polishing while reducing energy waste. For example, when there is less liquid residue, a smaller gas flow can be used, thereby reducing energy consumption and gas consumption, and improving cost-effectiveness. The combination of the first valve V1 and the first flow meter M1 enables the polishing head 10 to adapt to different polishing conditions and requirements, and the operator can flexibly adjust the first valve V1 according to the data of the first flow meter M1 to adapt to different polishing stages and liquid residue conditions. The first flow meter M1 provides real-time flow data, making it convenient for the operator to monitor and adjust the gas flow to ensure the safety of the polishing process. This real-time monitoring helps to discover and solve potential flow problems in a timely manner, avoiding equipment damage or production accidents caused by abnormal flow.
[0037] In some embodiments of the present application, referring to Figure 1 , the second supply channel 12S2 can be provided with a second valve V2 for controlling the flow of water supplied by the second supply channel 12S2.
[0038] By setting the second valve V2 on the second supply channel 12S2, the flow rate of water used for cleaning the polishing head 10, for example, can be controlled. This control allows the flow rate of water to be adjusted for effective cleaning after polishing, depending on the amount of contamination adhering to the polishing head 10. For example, when the adhering contamination is less, a smaller water flow rate can be used; when the adhering contamination is more, a larger water flow rate can be used, thereby improving the cleaning efficiency. The ability to precisely control the water flow rate allows the polishing head 10 to use water resources as needed during cleaning, avoiding unnecessary waste. This optimized use of water resources helps reduce production costs while meeting environmental requirements. Regular and effective cleaning can prevent wear and damage to the polishing head 10, maintain its performance, and extend its service life. The water flow rate controlled by the second valve V2 can ensure that the polishing head 10 is thoroughly cleaned, reducing the degradation of equipment performance due to the accumulation of contamination. A clean polishing head 10 is crucial for ensuring polishing quality, and cleaning the polishing head 10 by controlling the water flow rate can ensure consistency in each polishing process, avoiding fluctuations in product quality caused by polishing head contamination. The operator can flexibly adjust the water flow rate through the second valve V2 according to the contamination of the polishing head 10, making the cleaning process more convenient. This flexibility improves the convenience of operation and reduces the difficulty of operation. Through rapid and effective cleaning, the polishing head 10 can be quickly prepared for the next polishing, reducing downtime caused by incomplete cleaning or waiting for the polishing head to dry, thereby improving the overall efficiency of the production line. Precise control of the water flow rate helps thoroughly clean the polishing head 10, reducing the risk of cross-contamination during polishing, which is particularly important when polishing multiple wafers in succession.
[0039] In some embodiments of the present application, referring to Figure 1 , a second flow meter M2 can also be provided on the second supply channel 12S2, which is used to provide the flow rate of water flowing in the second supply channel 12S2.
[0040] By setting the second valve V2 and the second flow meter M2 on the second supply channel 12S2, the polishing head 10 can accurately control and monitor the flow of the supplied water, and such accurate flow control is crucial for the management of water quality and quantity during the cleaning process of the polishing head 10, especially when the polishing head needs to be cleaned after polishing to remove adhered contaminants, the second valve V2 can be adjusted according to the flow data provided by the second flow meter M2 to ensure that the water flow meets the cleaning process requirements. The accurate flow data provided by the second flow meter M2 helps to ensure the consistency and effectiveness of each cleaning process, improving the cleaning efficiency and effect, which is crucial for maintaining the cleanliness and performance of the polishing head 10 and improving the quality and efficiency of subsequent polishing processes. By accurately controlling the water flow, the polishing head 10 can ensure the cleaning effect while reducing water waste, such water resource management helps to reduce production costs while meeting environmental requirements. The combination of the second valve V2 and the second flow meter M2 enables the polishing head 10 to adapt to different cleaning conditions and requirements, and the operator can flexibly adjust the second valve V2 according to the data of the second flow meter M2 to adapt to different cleaning stages and contamination conditions. The second flow meter M2 provides real-time flow data, allowing the operator to conveniently monitor and adjust the water flow to ensure the safety of the cleaning process, and such real-time monitoring helps to discover and solve potential flow problems in time, avoiding equipment damage or production accidents caused by abnormal flow. By accurately controlling the water flow, the polishing head 10 can effectively clean, reducing or eliminating additional cleaning steps, which helps to optimize the maintenance process of the polishing head, shorten the maintenance cycle, and improve the overall efficiency of the production line.
[0041] In some embodiments of the present application, referring to Figure 1 , a third valve M3 can be provided on the third supply channel 12S3, and the third valve M3 is used to control the negative pressure of the vacuum supplied by the third supply channel 12S3.
[0042] By setting the third valve M3 on the third supply channel 12S3, the polishing head 10 can precisely control the supplied vacuum negative pressure, thereby finely adjusting the adsorption force of the wafer. This control ability enables the use of a larger vacuum negative pressure when a larger adsorption force is needed (such as fixing the wafer at the beginning of polishing), and the use of a smaller vacuum negative pressure when a smaller adsorption force is needed (such as slightly fixing the wafer at the end of polishing or in specific process steps). The ability to precisely control the adsorption force improves the flexibility of wafer processing, enabling the polishing head 10 to adapt to the polishing needs of different types and sizes of wafers. This flexibility is crucial for ensuring the stability and safety of the wafer at different polishing stages. By adjusting the adsorption force, the contact between the wafer and the polishing pad can be optimized, thereby improving the polishing quality and efficiency. Proper adsorption force helps achieve uniform polishing results and reduces wafer surface damage caused by uneven pressure. By precisely controlling the vacuum negative pressure, the operator can ensure the safety of the wafer during polishing, preventing wafer breakage or displacement caused by excessive or insufficient adsorption force, which improves the safety of the operation and reduces the risk of production accidents. By precisely controlling the vacuum negative pressure, the polishing head 10 can reduce unnecessary energy consumption and reduce the operating cost of the equipment. For example, in cases where a larger adsorption force is not needed, the load on the vacuum pump is reduced, thereby saving energy. The setting of the third valve M3 enables the polishing head 10 to adjust the vacuum negative pressure according to real-time feedback, enhancing the adaptability and intelligent level of the equipment. This intelligent operation improves production efficiency and provides support for automation and intelligent manufacturing. By precisely controlling the adsorption force, the polishing head 10 can reduce downtime caused by adjusting the adsorption force and improve the overall efficiency of the production line. This efficiency improvement helps shorten the production cycle and increase productivity.
[0043] In some embodiments of the present application, referring to , a pressure gauge M3 can also be provided on the third supply channel 12S3, which is used to provide the negative pressure in the third supply channel 12S3.
[0044] By setting the third valve V3 and the pressure gauge M3 on the third supply channel 12S3, the polishing head 10 can accurately control and monitor the supplied vacuum negative pressure, and such accurate negative pressure control is crucial for wafer adsorption, especially when the adsorption force needs to be adjusted according to different process requirements during polishing. The third valve V3 can be adjusted according to the negative pressure data provided by the pressure gauge M3 to ensure that the negative pressure meets the process requirements. The ability to accurately control the negative pressure improves the reliability of wafer adsorption, ensuring that the wafer is stably fixed on the polishing head 10 during polishing. Such reliability is crucial for preventing wafer displacement or falling off and avoiding accidental damage during polishing. By adjusting the negative pressure, the contact between the wafer and the polishing pad can be optimized, thereby improving the polishing quality and efficiency. Proper negative pressure helps achieve uniform polishing results and reduces wafer surface damage caused by uneven pressure. By precisely controlling the negative pressure, the operator can ensure the safety of the wafer during polishing, preventing wafer breakage or displacement caused by excessive or insufficient adsorption force, which improves the safety of the operation and reduces the risk of production accidents. By precisely controlling the negative pressure, the polishing head 10 can reduce unnecessary energy consumption and reduce the operating cost of the equipment. For example, in cases where a larger adsorption force is not required, the load on the vacuum pump is reduced, thereby saving energy. The combination of the third valve V3 and the pressure gauge M3 enables the polishing head 10 to adjust the negative pressure according to real-time feedback, enhancing the adaptability and intelligence level of the equipment. Such intelligent operation improves production efficiency and provides support for achieving automation and intelligent manufacturing.
[0045] The utility model embodiment further provides a polishing equipment, the polishing equipment can include the polishing head 10 according to each preceding embodiment of the utility model.
[0046] The polishing head 10 integrated in the polishing equipment combines multiple functions (such as gas, water and vacuum supply), enabling quick switching between different media and vacuum during polishing. Such flexibility makes the polishing process more efficient and quickly adapts to different process requirements, thereby improving overall production efficiency.
[0047] It should be noted that the technical solutions disclosed in the utility model can be combined arbitrarily without conflict.
[0048] The above is merely a specific implementation of the utility model, and the protection scope of the utility model is not limited thereto. Any skilled person in the art can easily think of changes or replacements within the technical range disclosed in the utility model, which should be covered within the protection scope of the utility model. Therefore, the protection scope of the utility model should be subject to the protection scope of the claims.
Claims
1. A polishing head, characterized by, The polishing head comprises: a first body having a main passage and a plurality of branch passages branching out from the main passage, the main passage forming a main passage opening at a first surface of the first body, the plurality of branch passages forming a corresponding plurality of branch passage openings at a second surface of the first body; a second body having at least two supply passages forming a corresponding at least two supply passage openings at a mating surface of the second body, the mating surface forming a sealing fit with the first surface of the first body; wherein the first body and the second body are rotatable relative to each other about a rotation axis perpendicular to the mating surface, such that each supply passage opening is alignable with the main passage opening, and when one supply passage opening is aligned with the main passage opening, the at least two supply passage openings other than the one supply passage opening are closed by the first surface of the first body.
2. The polishing head of claim 1, wherein The polishing head further comprises a driver for driving the first body to rotate relative to the second body.
3. A polishing head according to claim 1 or 2, wherein The second body has a first supply passage for supplying gas, a second supply passage for supplying water, and a third supply passage for supplying vacuum.
4. The polishing head of claim 3, wherein The first supply passage is provided with a first valve for controlling the flow of gas supplied by the first supply passage.
5. The polishing head of claim 4, wherein, The first supply passage is further provided with a first flow meter for providing the flow of gas flowing in the first supply passage.
6. The polishing head of claim 3, wherein, The second supply passage is provided with a second valve for controlling the flow of water supplied by the second supply passage.
7. The polishing head of claim 6, wherein The second supply passage is further provided with a second flow meter for providing the flow of water flowing in the second supply passage.
8. The polishing head of claim 3, wherein, The third supply passage is provided with a third valve for controlling the negative pressure of vacuum supplied by the third supply passage.
9. The polishing head of claim 8, wherein, The third supply passage is further provided with a pressure gauge for providing the negative pressure in the third supply passage.
10. A polishing apparatus characterized by comprising: The polishing apparatus comprises the polishing head according to any one of claims 1 to 9.