Semiconductor device
By setting a light-blocking layer in the semiconductor device to block the propagation of light, the problems of increased power consumption and reduced performance caused by leakage current are solved, and the device can work efficiently in a light-illuminated environment.
Patent Information
- Application Number
- CN202422839426.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-20
- Publication Date
- 2025-11-18
- Estimated Expiration
- 2034-11-20
AI Technical Summary
Semiconductor devices suffer from leakage current during use, which leads to increased power consumption and reduced performance. In particular, leakage current increases significantly in environments with high light intensity, affecting the normal operation of the device.
In semiconductor devices, a light-blocking layer is placed to block the propagation of light, reduce the intensity of light shining on the substrate and chip, and reduce leakage current by absorbing or reflecting light of specific wavelengths.
It effectively reduces the leakage current of semiconductor devices, improves device performance and reliability, and ensures normal operation of devices in light-illuminated environments.
Smart Images
Figure CN223566609U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor devices, in particular to a semiconductor device. BACKGROUND
[0002] A semiconductor device refers to an electronic component that utilizes the properties of semiconductor materials (such as silicon, germanium, etc.) to control the flow of current. These devices play a central role in modern electronic technology and are widely used in computers, communications, consumer electronics, and other fields.
[0003] During the use of a semiconductor device, there will be different degrees of leakage current. Leakage current will not only cause the power consumption of the semiconductor device to increase, but also reduce the performance and reliability of the semiconductor device, affecting the normal operation of the semiconductor device. CONTENT OF THE UTILITY MODEL
[0004] The semiconductor device provided by the embodiments of the present application can reduce the leakage current during use, thereby reducing the power consumption of the semiconductor device, improving the performance and reliability of the semiconductor device, and ensuring the normal operation of the semiconductor device.
[0005] In a first aspect, the embodiments of the present application provide a semiconductor device, comprising:
[0006] a housing, the housing forms a containing cavity inside, and the housing is provided with a through hole communicating the containing cavity and the external environment;
[0007] a substrate connected to the housing and located inside the containing cavity, and the substrate is provided with a chip on one side along a first direction;
[0008] The semiconductor device further comprises a light blocking layer, the light blocking layer is located between the side of the substrate on which the chip is arranged and the inner side wall of the containing cavity in the first direction, and the projection of the light blocking layer in the first direction at least partially covers the projection of the chip in the first direction.
[0009] In some embodiments, the light blocking layer is configured to absorb light of a specific wavelength, and the light blocking layer is formed by the light absorbing member;
[0010] And / or, the light blocking layer is configured to reflect light of a specific wavelength, and the light blocking layer is formed by the light reflecting member.
[0011] In some embodiments, the light blocking layer comprises a plurality of light blocking parts;
[0012] The light blocking parts are arranged as colored particles, and / or the light blocking parts are arranged as black particles.
[0013] In some embodiments, the light blocking part is a carbon powder particle.
[0014] In some embodiments, a projection of the light blocking part in the first direction at least partially overlaps with a projection of the through hole in the first direction.
[0015] In some embodiments, a pin is further included, the pin extending along the first direction, one end of the pin being connected with the chip, and the other end of the pin passing through the through hole;
[0016] The light blocking layer is arranged around the pin in the first direction, and the light blocking layer wraps part of the pin in the first direction.
[0017] In some embodiments, a gap is formed between the pin and the through hole, and the light blocking layer is bonded to both the pin and the substrate;
[0018] A projection of the light blocking layer in the first direction at least partially overlaps with a projection of the gap in the first direction.
[0019] In some embodiments, the light blocking layer has a greater elasticity than the pin, and the pin is configured to be able to shake relative to the substrate.
[0020] In some embodiments, the light blocking layer comprises an organic silicon material, the light blocking layer being filled between the substrate and the inner side wall of the accommodating cavity, and the organic silicon material wrapping part of the pin in the first direction.
[0021] In some embodiments, the light blocking layer comprises an epoxy type material, and the epoxy type material is black.
[0022] According to the semiconductor device provided in the present application, the semiconductor device comprises a substrate for implementing a core function and a shell connected to the substrate and serving as a protective package for the substrate, an accommodating cavity is formed inside the shell, and the substrate is located in the accommodating cavity. In order to ensure normal operation of the semiconductor device, a through hole is formed in the shell and communicates between the accommodating cavity and the external environment, and heat generated by the chip is dissipated through the through hole. Further, a light blocking layer is arranged between the side of the substrate on which the chip is arranged and the inner side wall of the accommodating cavity, the light blocking layer is used to hinder the propagation of light, reduce the intensity of light irradiated onto the substrate and the chip, reduce the intensity of photovoltaic effect of the semiconductor device, and thus reduce the leakage current of the semiconductor device, thereby improving the performance and reliability of the semiconductor device. BRIEF DESCRIPTION OF DRAWINGS
[0023] The features, advantages, and technical effects of the exemplary embodiments of the present application will be described below with reference to the accompanying drawings.
[0024] Fig. 1 A structure schematic diagram of a semiconductor device provided for some embodiments of the present application;
[0025] Fig. 2 A structure schematic diagram of a semiconductor device provided for some embodiments of the present application;
[0026] Fig. 3 A structure schematic diagram of a semiconductor device provided for some embodiments of the present application;
[0027] Marking description:
[0028] 10, housing; 11, accommodating cavity; 12, through hole;
[0029] 20, substrate; 21, chip;
[0030] 30, light blocking layer; 31, light blocking part; 32, potting adhesive; 33, second layer; 34, first layer;
[0031] 40, pin;
[0032] X, first direction; Y, second direction; Z, third direction.
[0033] In the drawings, the same parts are designated by the same reference numerals. The drawings are not drawn according to the actual proportions. DETAILED DESCRIPTION
[0034] The features and exemplary embodiments of various aspects of the present application will be described in detail below with reference to the drawings. The following detailed description is merely intended to explain the present application, and is not intended to limit the present application. The present application can be implemented without some of the specific details. The following description of the embodiments is merely intended to provide a better understanding of the present application by showing examples of the present application.
[0035] It should be noted that, in this document, relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action, without necessarily requiring or implying any actual relationship or order between such entities or actions. Moreover, the terms "comprises", "comprising", or any other variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can include other elements not expressly listed or inherent to such process, method, article, or apparatus. An element proceeded by "comprises... a" does not, without more constraints, exclude the existence of additional identical elements in the process, method, article, or apparatus that comprises the element.
[0036] A semiconductor device refers to an electronic component that utilizes the properties of semiconductor materials (such as silicon, germanium, etc.) to control the flow of electric current. These devices play a central role in modern electronics and are widely used in computers, communications, consumer electronics, and other fields.
[0037] During the use of semiconductor devices, there will be different degrees of leakage current. Leakage current will not only cause the power consumption of semiconductor devices to increase, but also reduce the performance and reliability of semiconductor devices, affecting the normal work of semiconductor devices.
[0038] In view of this, please refer to Figs. 1 to 3 The semiconductor device provided by the embodiments of the present application includes a shell 10, a substrate 20, and a light blocking layer 30. The shell 10 forms a containing cavity 11 inside. The shell 10 is provided with a through hole 12 that communicates the containing cavity 11 with the external environment. The substrate 20 is connected to the shell 10 and is inside the containing cavity 11. The substrate 20 is provided with a chip 21 on one side in the first direction X. The light blocking layer 30 is between the side of the substrate 20 on which the chip 21 is arranged in the first direction X and the inner side wall of the containing cavity 11 in the first direction X. The projection of the light blocking layer 30 in the first direction X at least partially covers the projection of the chip 21 in the first direction X.
[0039] The semiconductor device provided by the embodiments of the present application can be a diode, a transistor, or a triode. Exemplarily, the diode can be a FRD (fast recovery diode) capable of realizing fast reverse recovery; the transistor can be an IGBT (insulated gate bipolar transistor) with high input impedance and high switching speed.
[0040] Specifically, the semiconductor device comprises a substrate 20 for implementing core functions and a shell 10 connected to the substrate 20 and serving as a protective package of the substrate 20, the shell 10 forms an accommodating cavity 11 inside, and the substrate 20 is located in the accommodating cavity 11, wherein the substrate 20 is provided with a chip 21 on one side in a first direction X. During the operation of the chip 21 in the semiconductor device, corresponding heat is generated. In order to ensure the normal operation of the semiconductor device, the shell 10 is provided with a through hole 12 communicating the accommodating cavity 11 and the external environment, and the heat generated by the chip 21 is dissipated through the through hole 12.
[0041] In actual use, due to factors such as PN junction leakage current and capacitor leakage current, the semiconductor device will inevitably generate a certain degree of leakage current. The applicant found that in an environment with high light intensity, the leakage current in the semiconductor device will increase significantly, and the increase of the leakage current will be more obvious when the light irradiates on the chip 21.
[0042] In the semiconductor device provided in the embodiment of the present application, the chip 21 is arranged on the substrate 20, and a light blocking layer 30 is arranged between the side of the substrate 20 facing the through hole 12 and the inner side wall of the accommodating cavity 11. The light blocking layer 30 is used to hinder the propagation of light and reduce the intensity of light irradiating on the substrate 20 and the chip 21, so as to reduce the intensity of the photovoltaic effect of the semiconductor device, thereby reducing the leakage current of the semiconductor device and improving the performance and reliability of the semiconductor device.
[0043] Based on the fact that the chip 21 is located on one side of the substrate 20 in the first direction X, in order to ensure that the light blocking layer 30 has a reliable effect on the light irradiating on the chip 21, the projection of the light blocking layer 30 on the first direction X at least partially overlaps the projection of the chip 21 on the first direction X. Considering that light usually propagates in a straight line in a medium, the side of the chip 21 facing the substrate 20 is hindered by the substrate 20, and the light blocking layer 30 is arranged on the side of the chip 21 away from the substrate 20, so as to form a protective effect on both sides of the chip 21 in the first direction X, thereby reducing the probability of light irradiating on the chip 21.
[0044] It can be understood that when the chip 21 protrudes from the substrate 20 in the first direction X, that is, part of the structure of the chip 21 is exposed in the second direction Y or in the third direction Z, and the first direction X, the second direction Y and the third direction Z intersect with each other. The light blocking layer 30 can cover the chip 21 in the second direction Y and the third direction Z.
[0045] When the plurality of chips 21 are arranged on the substrate 20 and are spaced apart, the light blocking layer 30 can be arranged as a whole structure, and the light blocking layer 30 simultaneously covers the plurality of chips 21 in the first direction X. The light blocking layer 30 can also be arranged as a plurality of sub-structures, and each part of the light blocking layer 30 corresponds to each chip 21.
[0046] In summary, in the embodiments of the present application, the semiconductor device includes a substrate 20 for implementing a core function and a shell 10 connected to the substrate 20 and serving as a protective package for the substrate 20, the shell 10 forms an accommodation cavity 11 inside, and the substrate 20 is located in the accommodation cavity 11. The substrate 20 is provided with a chip 21 on one side in the first direction X. In order to ensure the normal operation of the semiconductor device, a through hole 12 is formed on the shell 10 to communicate the accommodation cavity 11 with the external environment, and the heat generated by the chip 21 is dissipated through the through hole 12. Further, a light blocking layer 30 is arranged between the side of the substrate 20 on which the chip 21 is arranged and the inner side wall of the accommodation cavity 11. The light blocking layer 30 is used to hinder the propagation of light and reduce the intensity of light irradiating on the substrate 20 and the chip 21, so as to reduce the intensity of the photovoltaic effect of the semiconductor device, thereby reducing the leakage current of the semiconductor device, and improving the performance and reliability of the semiconductor device.
[0047] In some embodiments, the light blocking layer 30 is configured to absorb light of a specific wavelength, and the light blocking layer 30 is formed of a light absorbing member. And / or, the light blocking layer 30 is configured to reflect light of a specific wavelength, and the light blocking layer 30 is formed of a light reflecting member.
[0048] The light blocking layer 30 is configured to absorb or reflect light of a specific wavelength, and the light blocking layer 30 mainly blocks visible light with a wavelength between 380 nm and 750 nm. The light blocking layer 30 can simultaneously absorb light within the above wavelength range, or can simultaneously reflect light within the above wavelength range, or the light blocking layer 30 can absorb part of the light within the above wavelength range, and reflect the remaining light within the above wavelength range. In summary, the light blocking layer 30 is configured to reduce the intensity of light passing through it to protect the chip 21, thereby reducing the leakage current of the semiconductor device.
[0049] In some embodiments, the light blocking layer 30 can include a chromophore, which is a structural system that absorbs visible light in a molecule, such as C=C, C=O, C≡C, etc. These structures can absorb light energy through π→π or n→π electron transition.
[0050] In some embodiments, the light blocking layer 30 includes a plurality of light blocking portions 31, and the light blocking portions 31 are arranged as colored particles. And / or, the light blocking layer 30 includes a plurality of light blocking portions 31, and the light blocking portions 31 are arranged as black particles.
[0051] In order to ensure that the light blocking layer 30 blocks the propagation of light and at the same time controls the production cost of the semiconductor device, the light blocking layer 30 is formed as a colored layer. Specifically, the light blocking layer 30 can include a plurality of light blocking portions 31, which are arranged as colored particles. Exemplarily, the light blocking portions 31 are arranged as red particles. For visible light, the wavelength of violet light is approximately between 380 nm and 450 nm; the wavelength of blue light is approximately between 450 nm and 495 nm; the wavelength of green light is approximately between 495 nm and 570 nm; the wavelength of yellow light is approximately between 570 nm and 590 nm; the wavelength of orange light is approximately between 590 nm and 620 nm; and the wavelength of red light is approximately between 620 nm and 750 nm. By forming the light blocking layer 30 as red, red light between 620 nm and 750 nm can be reflected, and the rest of the colored light between 380 nm and 750 nm can be absorbed. The same applies to the arrangement of the light blocking portions 31 as particles of the rest of the colors, which will not be described herein again.
[0052] Alternatively, the light blocking portions 31 can also be arranged as black particles or white particles. A black layer can absorb all colored light, and a white layer can reflect all colored light. Alternatively, a smooth reflective surface can be formed between the side of the chip 21 facing the through hole 12 and the inner side wall of the accommodating cavity 11 to reflect light and thereby block the propagation of light.
[0053] In some embodiments, considering the cost and feasibility of the arrangement of the light blocking layer 30, the light blocking portions 31 are arranged as carbon powder particles, which form the light blocking layer 30 as a black layer to absorb all colored light and thereby block the propagation of light. Alternatively, the light blocking portions 31 can also be arranged as colored plastic particles.
[0054] In order to fix the position of the light blocking portions 31 in the accommodating cavity 11, the light blocking layer 30 further includes potting glue 32, which is filled between the substrate 20 and the inner side wall of the accommodating cavity 11, and the light blocking portions 31 are inside the potting glue 32 in the first direction X. It can be understood that after the substrate 20 is inside the accommodating cavity 11, the potting glue 32 is filled between the substrate 20 and the inner side wall of the accommodating cavity 11, and after the potting glue 32 is cured, a layered structure is formed, which is in contact with the substrate 20 and the inner side wall of the accommodating cavity 11 on both sides in the first direction X. The light blocking portions 31 are inside the potting glue 32, and the potting glue 32 surrounds the light blocking portions 31 on the circumferential side of the light blocking portions 31, thereby fixing the position of the light blocking portions 31 in the accommodating cavity 11 after the potting glue 32 is cured.
[0055] The particle diameter of the light blocking part 31 is preferably controlled to be between 10 nm and 100 nm. The particles within the above diameter range can be densely arranged in the potting glue 32, and there is no large gap between adjacent particles, which can effectively hinder the propagation of light. At the same time, the particles within the above diameter range are small, and will not exert additional force on the chip 21 and the substrate 20, thereby reducing the interference with the substrate 20 and the chip 21.
[0056] When the light blocking part 31 is mixed in the potting glue 32 as described above, it will not exert additional influence on the potting glue 32. Taking the light blocking part 31 as a color example, after the light blocking part 31 is mixed in the potting glue 32, it is equivalent to only coloring the original potting glue 32. During the process of filling the potting glue 32 in the substrate 20 and the inner side wall of the accommodating cavity 11, the flowability of the potting glue 32 will not be affected.
[0057] In some embodiments, as shown in Fig. 2 During the process of filling the potting glue 32 in the substrate 20 and the inner side wall of the accommodating cavity 11, a layer of potting glue 32 without the light blocking part 31 can be filled first. After the potting glue 32 without the light blocking part 31 is solidified to form the first layer 34, the potting glue 32 mixed with the light blocking part 31 is filled, and the potting glue 32 mixed with the light blocking part 31 is used as the second layer 33, so that the potting glue 32 without the light blocking part 31 and the potting glue 32 mixed with the light blocking part 31 form a clear layered structure in the first direction X. Through the above arrangement, the light blocking part 31 can hinder the propagation of light, and at the same time, the potting glue 32 can limit the position of the light blocking part 31, so that the light blocking part 31 is spaced apart from the chip 21 in the first direction X, thereby reducing the influence of the light blocking part 31 on the chip 21. Alternatively, as shown in Fig. 3 The potting glue 32 mixed with the light blocking part 31 forms a single layer structure between the substrate 20 and the inner side wall of the accommodating cavity 11.
[0058] In some embodiments, the projection of the light blocking part 31 in the first direction X at least partially overlaps the projection of the through hole 12 in the first direction X.
[0059] When the semiconductor device is in a bright environment, light will inevitably enter the semiconductor device through the through hole 12. In order to enable the light blocking part 31 to fully play a role, the light blocking part 31 is arranged at the position of the through hole 12, so that the light can be absorbed or reflected in time when it just enters the semiconductor device.
[0060] In some embodiments, the semiconductor device further comprises a pin 40 extending along the first direction X, one end of the pin 40 being connected with the chip 21, the other end of the pin 40 passing through the via hole 12. The light blocking layer 30 is arranged around the pin 40 along the first direction X, and the light blocking layer 30 wraps part of the pin 40 along the first direction X.
[0061] The pin 40 is used to connect the semiconductor device to the rest of the structure, and the pin 40 extends along the via hole 12 to the external environment. The pin 40 is partially between the substrate 20 and the inner side wall of the accommodating cavity 11 in the first direction X, and when the light blocking layer 30 is filled between the substrate 20 and the inner side wall of the accommodating cavity 11, the light blocking layer 30 is wrapped around the periphery of the pin 40 in the first direction X. On the one hand, since the pin 40 is connected with the chip 21, wrapping the light blocking layer 30 around the periphery of the pin 40 can more comprehensively hinder the propagation of light to the chip 21; on the other hand, wrapping the light blocking layer 30 around the periphery of the pin 40 can also fix the relative position between the pin 40 and the chip 21 and the substrate 20, reducing the probability of damage to the semiconductor device caused by positional deviation of the pin 40.
[0062] In some embodiments, a gap is formed between the pin 40 and the via hole 12, and the light blocking layer 30 is simultaneously bonded to the pin 40 and the substrate 20. The projection of the light blocking layer 30 in the first direction X at least partially overlaps the projection of the above-mentioned gap in the first direction X.
[0063] In order to ensure that the pin 40 can smoothly pass through the via hole 12 and reduce the influence of the via hole 12 on the pin 40, a gap is provided between the pin 40 and the via hole 12. At the same time, in order to reduce the probability of light entering the interior of the semiconductor device from the above-mentioned gap, the projection of the light blocking layer 30 in the first direction X overlaps the projection of the above-mentioned gap in the first direction X. Considering the refraction phenomenon of light when passing through different propagation media, it is preferred that the projection of the light blocking layer 30 in the first direction X covers the projection of the above-mentioned gap in the first direction X, so as to comprehensively hinder the propagation of light.
[0064] In some embodiments, the elasticity of the light blocking layer 30 is greater than the elasticity of the pin 40, and the pin 40 is configured to be able to produce relative shaking relative to the substrate 20.
[0065] When the pin 40 is connected to the rest of the structure, the pin 40 is inevitably subjected to acting forces in different directions. In order to buffer the acting forces received by the pin 40, the elasticity of the light blocking layer 30 is set to be greater than the elasticity of the pin 40. Through the above-mentioned setting, when the pin 40 is subjected to external acting forces, the acting forces are correspondingly transmitted to the light blocking layer 30, so that the light blocking layer 30 deforms to a certain extent, thereby enabling the pin 40 to produce relative shaking relative to the substrate 20, and reducing the probability of damage to the pin 40.
[0066] In some embodiments, the light blocking layer 30 comprises an organic silicon material, the light blocking layer 30 is filled between the substrate 20 and the inner side wall of the accommodating cavity 11, and the organic silicon wraps the partial pin 40 in the first direction X.
[0067] That is, the above-mentioned potting adhesive 32 is provided as an organic silicon material, the organic silicon material not only has certain elasticity, but also has good insulation performance and heat conduction performance, thereby well transmitting the heat generated by the chip 21 and well protecting the chip 21.
[0068] In some embodiments, the light blocking layer 30 comprises an epoxy type material, and the epoxy type material is black. The potting adhesive 32 can also be provided as an epoxy type material, in order to well hinder the light passing through the light blocking layer 30, the epoxy type material is provided as black or colored, and the effect is similar to that of the light blocking part 31 provided as colored or black, which will not be described herein again.
[0069] Although the utility model has been described with reference to the preferred embodiments, various improvements can be made and the components therein can be replaced with equivalents without departing from the scope of the utility model. In particular, the technical features mentioned in each embodiment can be combined in any manner as long as there is no structural conflict. The utility model is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.
Claims
1. A semiconductor device, characterized by, The semiconductor device comprises: a housing, the housing internally forms a containing cavity, the housing is provided with a through hole communicating the containing cavity and the external environment; a substrate, the substrate is connected to the housing and is inside the containing cavity, the substrate is provided with a chip on one side in a first direction; wherein the semiconductor device further comprises a light blocking layer, the light blocking layer is between the side of the substrate on which the chip is provided and the inner side wall of the containing cavity in the first direction, the projection of the light blocking layer in the first direction at least partially covers the projection of the chip in the first direction.
2. The semiconductor device according to claim 1, wherein The light blocking layer is configured to absorb light of a specific wavelength, and the light blocking layer is formed by a light absorbing member; and / or, the light blocking layer is configured to reflect light of a specific wavelength, and the light blocking layer is formed by a light reflecting member.
3. The semiconductor device of claim 1, wherein The light blocking layer comprises a plurality of light blocking parts; The light blocking parts are provided as colored particles, and / or the light blocking parts are provided as black particles.
4. The semiconductor device according to claim 3, wherein The light blocking parts are carbon powder particles.
5. The semiconductor device of claim 3, wherein The projection of the light blocking parts in the first direction at least partially overlaps the projection of the through hole in the first direction.
6. The semiconductor device of claim 1, wherein Further comprising a pin, the pin extends in the first direction, one end of the pin is connected to the chip, and the other end of the pin passes through the through hole; The light blocking layer is arranged on the periphery of the pin in the first direction, and the light blocking layer wraps part of the pin in the first direction.
7. The semiconductor device of claim 6, wherein, The gap is formed between the pin and the through hole, and the light blocking layer is simultaneously bonded to the pin and the substrate; The projection of the light blocking layer in the first direction at least partially overlaps the projection of the gap in the first direction.
8. The semiconductor device of claim 7, wherein, The elasticity of the light blocking layer is greater than the elasticity of the pin, and the pin is configured to be able to produce relative shaking relative to the substrate.
9. The semiconductor device of claim 8, wherein, The light blocking layer comprises an organic silicon material, the light blocking layer is filled between the substrate and the inner side wall of the containing cavity, and the organic silicon wraps part of the pin in the first direction.
10. The semiconductor device of claim 1, wherein The light blocking layer comprises an epoxy type material, and the epoxy type material is black.