Radio frequency front-end module and electronic equipment

Abstract

The utility model discloses a radio frequency front-end module and electronic equipment, and relates to the technical field of communication equipment, the radio frequency front-end module comprises a circuit substrate, the circuit substrate comprises a substrate and a plurality of wiring metal layers which are sequentially stacked on the surface of one side of the substrate, and an insulating dielectric layer is arranged between every two adjacent wiring metal layers; the wiring metal layer comprises inductance coils, and the inductance coils in the wiring metal layer are connected in series to form a matched inductor; the low-noise amplifier is fixed on the surface of one side, deviating from the substrate, of the circuit substrate; the filter is fixed on the surface of one side, deviating from the substrate, of the circuit substrate; wherein the low noise amplifier and the filter are connected through the matching inductor. According to the radio frequency front-end module, the size of the matching inductor is reduced, the integration level of the radio frequency front-end module is improved, the size of the radio frequency front-end module is reduced, and the miniaturization design of electronic equipment is conveniently realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of communication equipment, and in particular to a radio frequency front-end module and an electronic device. BACKGROUND

[0002] As an important device in a radio frequency module, a low noise amplifier (LNA) belongs to an active module. The LNA is very critical to the performance of a receiver system, is used to obtain an extremely weak uncertain signal from an antenna and amplify the signal, and also needs to identify noise. Main parameters of the LNA include a noise figure, a gain, input / output matching, linearity, reverse isolation, and the like.

[0003] Before the 5G communication era, since a separate radio frequency front-end device can also meet the performance requirements of an electronic device, a radio frequency front-end module (or a radio frequency module) is generally used in high-end devices, and a separate radio frequency front-end device is generally used in low-end devices. After the 5G era, since the demand for the number of single product radio frequency components has increased dramatically, the area occupied by the separate device has exceeded the acceptable limit, and the debugging time is also longer. Therefore, the modularization of the radio frequency front-end device has become a development trend in the mobile communication market.

[0004] At present, common types of radio frequency front-end modules include FEMiD (integrated switch, filter, and duplexer), PAMiD (integrated multi-mode multi-band PA and FEMiD), LPAMiD (PAMiD plus LNA), DiFEM (radio frequency switch and filter), LFEM (radio frequency switch, LNA, and filter), and the like.

[0005] For a radio frequency front-end module including a low noise amplifier and a filter, the radio frequency front-end module generally needs to connect a matching inductor between the low noise amplifier and the filter as input impedance matching to optimize the performance of the radio frequency front-end module. At present, in a conventional radio frequency front-end module, a planar inductor is generally used as the matching inductor connected between the low noise amplifier and the filter. Since the area of the planar inductor is large, the size of the radio frequency front-end module is large, which is not convenient for miniaturization design of an electronic device. In view of the above problems, the present application provides a radio frequency front-end module and an electronic device to realize the purpose of reducing the size of the radio frequency front-end module. The specific scheme is as follows:

[0006] In view of the above problems, the present application provides a radio frequency front-end module and an electronic device to realize the purpose of reducing the size of the radio frequency front-end module. The specific scheme is as follows:

[0007] The first aspect of the present application provides a radio frequency front-end module, which comprises:

[0008] The circuit substrate comprises a substrate and a plurality of layers of wiring metal layers stacked in sequence on one side surface of the substrate, and an insulating medium layer between adjacent layers of wiring metal layers; the layer of wiring metal layers comprises an inductor coil, and the inductor coils in the layers of wiring metal layers are connected in series to form a matching inductor;

[0009] The low-noise amplifier is fixed on the side surface of the circuit substrate facing away from the substrate;

[0010] The filter is fixed on the side surface of the circuit substrate facing away from the substrate;

[0011] The low-noise amplifier and the filter are connected through the matching inductor.

[0012] Optionally, in the above-mentioned radio frequency front-end module, the surface of the substrate has a ground metal layer;

[0013] The ground metal layer has the layers of wiring metal layers stacked in sequence on the side surface facing away from the substrate, and the ground metal layer and adjacent layers of wiring metal layers have insulating medium layers therebetween.

[0014] Optionally, in the above-mentioned radio frequency front-end module, the circuit substrate has N layers of wiring metal layers; in the direction in which the substrate points to the layers of wiring metal layers, the N layers of wiring metal layers are sequentially a first layer of wiring metal to an Nth layer of wiring metal, the inductor coils in the first layer of wiring metal to the Nth layer of wiring metal are sequentially a first inductor coil to an Nth inductor coil, the i-th inductor coil and the (i+1)-th inductor coil are connected through a first conductive hole, N is a positive integer greater than 1, and i is a positive integer less than N.

[0015] Optionally, in the above-mentioned radio frequency front-end module, the matching inductor has a first port and a second port, and the first inductor coil to the Nth inductor coil are connected in series between the first port and the second port; the first port is connected to the low-noise amplifier, and the second port is connected to the filter;

[0016] The first port is located in the first layer of wiring metal and connected to the first inductor coil; and the second port is located in the Nth layer of wiring metal and connected to the Nth inductor coil.

[0017] Or, the first port is located in the Nth layer of wiring metal and connected to the Nth inductor coil; and the second port is located in the first layer of wiring metal and connected to the first inductor coil.

[0018] Optionally, in the above-mentioned radio frequency front-end module, the pin for connecting the matching inductor faces the circuit substrate;

[0019] The ground metal layer comprises a hollow region; and the pin for connecting the matching inductor is vertically opposite to the hollow region.

[0020] Optionally, in the above-mentioned radio frequency front-end module, the pin is connected to the matching inductor through a connecting line, and the connecting line is vertically opposite to the hollow region.

[0021] Optionally, in the above radio frequency front-end module, the pin of the low-noise amplifier for connecting the matching inductor is away from the circuit substrate.

[0022] The pin of the low-noise amplifier for connecting the matching inductor is connected to the uppermost inductor coil through a wire.

[0023] Optionally, in the above radio frequency front-end module, the dielectric constant of the insulating dielectric layer is less than 3.

[0024] Optionally, in the above radio frequency front end module, the circuit substrate comprises at least three layers of wiring metal layers, and the wiring metal layers All packages The inductor coil.

[0025] Optionally, in the above radio frequency front-end module, in the direction perpendicular to the plane where the substrate is located, the inductor coil is located in the region of the circuit substrate between the low-noise amplifier and the filter, and the inductor coil does not overlap with the low-noise amplifier and the filter.

[0026] Optionally, in the above radio frequency front-end module, in the direction where the substrate points to the wiring metal layer, the area of the inductor coil decreases or increases successively.

[0027] The second aspect of the present application provides an electronic device comprising the above radio frequency front-end module.

[0028] Through the above technical solution, the radio frequency front-end module and the electronic device provided by the present application can integrate a three-dimensional inductor structure in the circuit substrate, use the three-dimensional inductor structure as the matching inductor connecting the low-noise amplifier and the filter, reduce the size of the matching inductor compared with the conventional solution using a planar inductor as the matching inductor, improve the integration of the radio frequency front-end module, reduce the size of the radio frequency front-end module, and facilitate the miniaturization design of the electronic device.

[0029] Further, the technical solution of the present application can also optimize the connection mode of the low-noise amplifier and the matching inductor, reduce the parasitic capacitance between the pin of the low-noise amplifier and the ground metal layer, reduce the adverse effects of the parasitic capacitance on the performance of the radio frequency front-end module, and improve the performance of the radio frequency front-end module. BRIEF DESCRIPTION OF DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments or the related art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only embodiments of the present application, and those skilled in the art can obtain other drawings according to the provided drawings without any creative effort.

[0031] The structures, proportions, sizes, etc., shown in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportions, or adjustments to the size, without affecting the effects and purposes that this application can produce, should still fall within the scope of the technical content disclosed in this application.

[0032] Figure 1 This is a schematic diagram of the radio frequency link for a diversity antenna.

[0033] Figure 2 A cross-sectional view of a radio frequency front-end module provided in an embodiment of this application;

[0034] Figure 3 A cross-sectional view of another radio frequency front-end module provided in an embodiment of this application;

[0035] Figure 4 A schematic diagram illustrating the series connection of inductor coils in a circuit board, provided as an embodiment of this application;

[0036] Figure 5 A cross-sectional view of another radio frequency front-end module provided in the embodiments of this application;

[0037] Figure 6 A schematic diagram illustrating another series connection method of inductor coils in a circuit board provided in an embodiment of this application;

[0038] Figure 7 for Figure 6 A cross-sectional view of the RF front-end module corresponding to the series connection of the inductors shown;

[0039] Figure 8 A gain curve of an RF front-end module provided in an embodiment of this application;

[0040] Figure 9 A noise profile of a radio frequency front-end module provided in an embodiment of this application;

[0041] Figure 10 This is a cross-sectional view of another radio frequency front-end module provided in the embodiments of this application.

[0042] Figure label:

[0043] 10 - RF front-end module; 11 - modulation receiving component; 12 - low noise amplifier; 13 - filter; 14 - RF switch; 15 - antenna tuner; 16 - antenna; 17 - circuit substrate; 171 - substrate; 172 - wiring metal layer; 173 - insulating dielectric layer; 174 - inductor coil; 175 - ground metal layer; 18 - first conductive hole; 191 - first port; 192 - second port; 20 - second conductive hole; 21 - wire. DETAILED DESCRIPTION

[0044] The embodiments in the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Those skilled in the art can know that the technical solutions provided by the embodiments in the present application are also applicable to similar technical problems as the technology develops and new scenarios appear.

[0045] REFERENCE Figure 1 , Figure 1 Fig. 1 is a schematic diagram of a radio frequency link of a diversity antenna, which includes a modulation receiving component 11, a low noise amplifier 12, a filter 13, a RF switch 14 and an antenna tuner 15 connected in sequence. The antenna tuner 15 is connected to an antenna 16.

[0046] The low noise amplifier 12, the filter 13 and the RF switch 14 are integrated into an RF front-end module 10. As described in the background, a matching inductor can be connected between the low noise amplifier 12 and the filter 13 in the RF front-end module to optimize the performance of the RF front-end module.

[0047] Since a planar inductor with a large area is generally used as the matching inductor in conventional technologies, the size of the RF front-end module is large.

[0048] To solve the above problem, the embodiments of the present application provide an RF front-end module, which comprises:

[0049] A circuit substrate, which comprises a substrate and a plurality of layers of wiring metal layers stacked in sequence on one side surface of the substrate, and has an insulating dielectric layer between adjacent layers of the wiring metal layers; the wiring metal layers comprise an inductor coil, and the inductor coils in the wiring metal layers are connected in series as a matching inductor;

[0050] A low noise amplifier, which is fixed on the side surface of the circuit substrate away from the substrate;

[0051] A filter, which is fixed on the side surface of the circuit substrate away from the substrate;

[0052] The low noise amplifier and the filter are connected through the matching inductor.

[0053] It can be known from the above description that, in the radio frequency front-end module provided by the embodiment of the application, the inductor coils are arranged in the wiring metal layers of the circuit substrate, the inductor coils in each layer of the wiring metal layers are connected in series to form a matching inductor, so that a three-dimensional inductor structure can be integrated in the circuit substrate, and the three-dimensional inductor structure is used as the matching inductor connecting the low-noise amplifier and the filter. Compared with the conventional scheme in which a planar inductor is used as the matching inductor, the size of the matching inductor is reduced, the integration of the radio frequency front-end module is improved, the size of the radio frequency front-end module is reduced, and the miniaturization design of the electronic device is facilitated.

[0054] Optionally, the technical scheme of the application can also reduce the parasitic capacitance between the pin of the low-noise amplifier and the ground metal layer by optimizing the connection mode of the low-noise amplifier and the matching inductor, so as to reduce the adverse effect of the parasitic capacitance on the performance of the radio frequency front-end module and improve the performance of the radio frequency front-end module.

[0055] It should be noted that, in the embodiment of the application, the type of the radio frequency front-end module is not limited, and the circuit structure of the radio frequency front-end module is not limited to the structure shown in the drawings, but can also be other radio frequency front-end modules including a low-noise amplifier and a filter. Figure 1 It should be noted that, in the embodiment of the application, the type of the radio frequency front-end module is not limited, and the circuit structure of the radio frequency front-end module is not limited to the structure shown in the drawings, but can also be other radio frequency front-end modules including a low-noise amplifier and a filter.

[0056] In order to make the above-mentioned purposes, features and advantages of the application more apparent and easy to understand, the application will be further described in detail below with reference to the drawings and specific embodiments.

[0057] Reference Figure 2 , Figure 2 A sectional view of a radio frequency front-end module provided by the embodiment of the application is shown, and the radio frequency front-end module includes:

[0058] A circuit substrate 17 includes a substrate 171 and a plurality of layers of wiring metal layers 172 stacked in sequence on one side surface of the substrate 171, and an insulating medium layer 173 is arranged between adjacent layers of the wiring metal layers 172; the wiring metal layer 172 includes an inductor coil 174, and the inductor coils 174 in the wiring metal layers 172 are connected in series to form a matching inductor;

[0059] A low-noise amplifier 12 is fixed on the side surface of the circuit substrate 17 away from the substrate 171;

[0060] A filter 13 is fixed on the side surface of the circuit substrate 17 away from the substrate 171;

[0061] The low-noise amplifier 12 and the filter 13 are connected through the matching inductor.

[0062] Optionally, the filter 13 can be a surface acoustic wave (SAW) filter. The filter 13 is not limited to be a SAW filter, but can be other types of filters, which are not limited in the embodiments of the present application.

[0063] The radio frequency front-end module is provided with the inductor coil 174 in the wiring metal layer 172 of the circuit substrate 17, and the inductor coils 174 in the wiring metal layers 172 are connected in series to form a matching inductor, so that the three-dimensional inductor structure can be integrated in the circuit substrate 17, and the three-dimensional inductor structure is used as the matching inductor connected between the low-noise amplifier 12 and the filter 13. Compared with the conventional scheme in which the planar inductor is used as the matching inductor, the size of the matching inductor is reduced, the integration of the radio frequency front-end module is improved, the size of the radio frequency front-end module is reduced, and the miniaturization design of the electronic device is facilitated.

[0064] Optionally, the insulating medium layer 173 can be a nickel-zinc ferrite material, or a polytetrafluoroethylene, or a polyimide, or a resin material, or a ceramic material, etc.

[0065] In the embodiments of the present application, the matching inductor can be prepared by reusing the wiring metal layer 172 inside the circuit substrate 17, and the matching inductor is integrated inside the circuit substrate 17. Compared with the way of fixedly connecting the matching inductor on the surface of the circuit substrate 17, the matching inductor can reduce the occupation of the surface layout space of the circuit substrate 17. Moreover, the three-dimensional inductor is formed by connecting the multi-layer matching inductor in series, so that a larger inductor can be formed in a limited area.

[0066] Reference Figure 3 , Figure 3 Another sectional view of the radio frequency front-end module provided by the embodiments of the present application is provided based on the above-mentioned implementation manners. Figure 3 In the radio frequency front-end module shown in the above-mentioned implementation manners, the surface of the substrate 171 is provided with the ground metal layer 175, and the surface of the ground metal layer 175 away from the substrate 171 is sequentially stacked with the wiring metal layers 172, and the ground metal layer 175 and the adjacent wiring metal layer 172 are provided with the insulating medium layer 173.

[0067] In the above-mentioned implementation manners, Figure 3 In the above-mentioned implementation manners, the surface of the substrate 171 is provided with the ground metal layer 175, and the surface of the ground metal layer 175 away from the substrate 171 is sequentially stacked with the wiring metal layers 172, and the ground metal layer 175 and the adjacent wiring metal layer 172 are provided with the insulating medium layer 173.

[0068] Reference Figure 4 , Figure 4 A schematic diagram of the series connection of the inductor coils in the circuit substrate provided by the embodiments of the present application is provided based on the above-mentioned implementation manners. Figure 4As shown in the above embodiment and the accompanying drawings, the circuit substrate 17 has N layers of wiring metal layers 172, N being a positive integer greater than 1; in the direction in which the substrate 171 points to the wiring metal layers 172, the N layers of wiring metal layers 172 are sequentially the 1st wiring metal layer to the Nth wiring metal layer, the inductance coils in the 1st wiring metal layer to the Nth wiring metal layer are sequentially the 1st inductance coil to the Nth inductance coil, and the i th inductance coil and the i+1 th inductance coil are connected through the first conductive hole 18, i being a positive integer less than N.

[0069] It should be noted that the present application is illustrated by taking N=3 as an example in the embodiments. It is easy to know that in the radio frequency front-end module, N can be set to any positive integer greater than 1 according to requirements, and is not limited to N=3.

[0070] Optionally, the circuit substrate 17 includes at least three layers of wiring metal layers 172, i.e., N≥3, and each of the wiring metal layers 172 includes an inductance coil 174 to form a matching inductance in series through at least three layers of stacked inductance coils 174, so that a larger inductance can be formed and the area of the matching inductance can be effectively reduced. N can be set to 4, 5 or other values according to requirements.

[0071] In the same wiring metal layer 172, the shape of the inductance coil 174 can be an eight-shaped, a hexagonal or other polygonal shape, and the present application does not limit the graphic structure of the inductance coil 174.

[0072] In the circuit substrate 17, the first conductive hole 18 is arranged between any two adjacent layers of wiring metal layers 172 to connect the inductance coils 174 in the two adjacent layers of wiring metal layers 172 in series.

[0073] In the present application, the inductance coils 174 are arranged in the multiple layers of wiring metal layers 172 stacked in sequence, and the inductance coils 174 can be connected in series through the first conductive hole 18. The electric Inductive coil The inductance coils 174 are connected in series, so that a three-dimensional inductance can be constructed based on the wiring metal layers 172 in the circuit substrate 17, and the matching inductance can be integrated inside the circuit substrate 17 to improve the integration of the radio frequency front-end module.

[0074] The matching inductance has a first port 191 and a second port 192, and the 1st inductance coil to the Nth inductance coil are connected in series between the first port 191 and the second port 192; the first port 191 is connected to the low-noise amplifier 12, and the second port 192 is connected to the filter 13. When receiving a signal, the flow direction of the received signal in the matching inductance is from the second port 192 to the first port 191. In the present application, the matching inductance is the input inductance of the low-noise amplifier 12 and is located between the low-noise amplifier 12 and the filter 13.

[0075] Reference Figure 5 ,Figure 5 A cross-sectional view of another radio frequency front-end module provided in the embodiments of this application, combined with Figure 4 and Figure 5 As shown, the first port 191 is located in the first wiring metal layer and is connected to the first inductor coil; the second port 192 is located in the Nth wiring metal layer and is connected to the Nth inductor coil.

[0076] exist Figure 5 In the illustrated configuration, since the second port 192 is located on the Nth wiring metal layer, the filter 13 can be directly connected to the second port 192 based on the Nth wiring metal layer. Figure 5 The mid-section does not pass through the connection point between filter 13 and the second port 192, therefore Figure 5 The connection point between filter 13 and second port 192 is not shown. Since first port 191 is located on the first wiring metal layer, low-noise amplifier 12 needs to be connected to first port 191 through second conductive via 20.

[0077] refer to Figure 6 and Figure 7 , Figure 6 This is a schematic diagram illustrating another series connection method of inductor coils in a circuit board provided in an embodiment of this application. Figure 7 for Figure 6 The diagram shows a cross-sectional view of the RF front-end module corresponding to the series connection configuration of the inductors. Based on the above implementation method, Figure 6 and Figure 7 In the configuration shown, the first port 191 is located on the Nth wiring metal layer and is connected to the Nth inductor coil; the second port 192 is located on the first wiring metal layer and is connected to the first inductor coil.

[0078] like Figure 6 and Figure 7 As shown, since the second port 192 is located on the first wiring metal layer, the filter 13 needs to be connected to the second port 192 through the second conductive via 20. Since the first port 191 is located on the Nth wiring metal layer, the low-noise amplifier 12 can be directly connected to the first port 191 based on the Nth wiring metal layer. Figure 7 The mid-section position does not pass through the connection point between the low-noise amplifier 12 and the first port 191, therefore Figure 7 The connection point between the low-noise amplifier 12 and the first port 191 is not shown in the diagram.

[0079] In this embodiment, the pins of the filter 13 and the low-noise amplifier 12 used for connecting the matching inductor can be positioned facing the circuit board 17. Thus, the pins of the filter 13 connected to the second port 192 are located on the lower surface of the filter 13, and the lower surface of the filter 13 is soldered and fixed to the surface of the circuit board 17.Figure 5 directly connected to the second port 192 in the Nth wiring metal layer, or is connected to the second port 192 in the first wiring metal layer through the second conductive hole 20 as shown in Figure 7 The pin of the low noise amplifier 12 connected to the first port 191 is located on the lower surface of the low noise amplifier 12, and the lower surface of the low noise amplifier 12 is soldered and fixed on the surface of the circuit substrate 17, which can be connected to the first port 191 in the first wiring metal layer through the second conductive hole 20 as shown in Figure 5 The pin of the low noise amplifier 12 connected to the first port 191 is located on the lower surface of the low noise amplifier 12, and the lower surface of the low noise amplifier 12 is soldered and fixed on the surface of the circuit substrate 17, which can be connected to the first port 191 in the first wiring metal layer through the second conductive hole 20 as shown in Figure 7 directly connected to the first port 191 in the Nth wiring metal layer.

[0080] When the pin of the low noise amplifier 12 for connecting the matching inductor faces the circuit substrate 17, the distance between the pin of the low noise amplifier 12 for connecting the matching inductor and the ground metal layer 175 is relatively Figure 5 as shown in the figure, Figure 7 In the manner as shown in the figure, the pin of the low noise amplifier 12 for connecting the matching inductor is far away from the ground metal layer 175, which can reduce the parasitic capacitance between the pin of the low noise amplifier 12 for connecting the matching inductor and the ground metal layer 175, and can improve the performance of the low noise amplifier, and further improve the performance of the radio frequency front-end module.

[0081] The calculation formula of the parasitic capacitance C can be expressed as follows:

[0082]

[0083] ε is the dielectric constant of the medium, S is the opposite area of the pin of the low noise amplifier 12 and the ground metal layer 175, d is the distance between the pin of the low noise amplifier 12 and the ground metal layer 175, and k is the electrostatic constant. When the medium material is determined, ε is a known constant, and 4πk is also a known constant. Relative to Figure 5 as shown in the figure, Figure 7 as shown in the figure, d is large, so C can be reduced.

[0084] The radio frequency front-end module (Scheme One) using the embodiments as shown in Figure 4 and Figure 5 The simulation experimental data of the radio frequency front-end module (Scheme Two) using the embodiments as shown in Figure 6 and Figure 7 as shown in the figures. Figure 8 and Figure 9 are the simulation experimental data of the radio frequency front-end module in the B40 link, and Scheme One and Scheme Two have the same or similar matching inductor design. Figure 8 Figure 9 Referring to and

[0085] , Figure 8 and Figure 9 , Figure 8A gain curve diagram of a radio frequency front-end module provided by an embodiment of the present application, Figure 9 A noise curve diagram of a radio frequency front-end module provided by an embodiment of the present application. Figure 8 In the figure, the horizontal axis is frequency / GHz, and the vertical axis is gain / dB. Figure 9 In the figure, the horizontal axis is frequency / GHz, and the vertical axis is noise figure. Figure 8 In the figure, curve S1 is the gain simulation curve of scheme two, and curve S2 is the gain simulation curve of scheme one. Based on the comparison between curve S1 and curve S2, it can be known that, in scheme two, the parasitic capacitance C is reduced, and thus the gain coefficient can be effectively improved. Figure 9 In the figure, curve S3 is the noise figure simulation curve of scheme two, and curve S4 is the noise figure simulation curve of scheme one. Based on the comparison between curve S3 and curve S4, it can be known that, scheme two and scheme one have approximately the same noise figure.

[0086] Based on Figure 8 and Figure 9 In the figure, the simulation curves of scheme one and scheme two are compared, and it can be known that, scheme two and scheme one have approximately the same noise figure, and the gain can be improved. It can be seen that, by reducing the parasitic capacitance C, the gain can be improved without increasing the noise figure.

[0087] In the above scheme two, based on formula (1), by increasing the distance d between the pin of the low-noise amplifier 12 and the ground metal layer 175, the parasitic capacitance C between the pin of the low-noise amplifier 12 and the ground metal layer 175 can be reduced.

[0088] Based on formula (1), reducing the opposite area S of the pin of the low-noise amplifier 12 and the ground metal layer 175 can also reduce the parasitic capacitance C.

[0089] In order to reduce the opposite area S, when the pin of the low-noise amplifier 12 connected to the matching inductor is arranged towards the circuit board 17, that is, when the pin of the low-noise amplifier 12 is located on the side surface of the low-noise amplifier 12 facing the circuit board 17, the ground metal layer 175 can also be arranged to include a hollow region; the pin of the low-noise amplifier 12 connected to the matching inductor is vertically opposite to the hollow region. In this way, by hollowing the ground metal layer 175, the opposite area S can be reduced, and even reduced to 0, and thus the parasitic capacitance C can be effectively reduced.

[0090] As described above, no matter whether the Figure 4 and Figure 5 shown manner is adopted, or the Figure 6 and Figure 7 shown scheme is adopted, the low-noise amplifier 12 needs to be connected to the connection line of the same wiring metal layer 172 as the inductor coil 174. As shown in Figure 5As shown, when the low noise amplifier 12 is connected to the first inductor coil, the first inductor coil needs to be connected to the connecting line located in the first wiring metal layer, and connected to the second conductive hole 20 through the connecting line. As shown in the figure, Figure 7 As shown, when the low noise amplifier 12 is connected to the Nth inductor coil, the Nth inductor coil needs to be connected to the connecting line located in the Nth wiring metal layer, and the connecting line is directly connected to the low noise amplifier 12.

[0091] As described above, the pin of the low noise amplifier 12 is connected to the matching inductor based on the connecting line, and the connecting line is perpendicular to the hollow area in the ground metal layer 175. In this way, the capacitance between the connecting line and the ground metal layer 175 can also be reduced to improve the performance of the radio frequency front end module.

[0092] Reference Figure 10 , Figure 10 Another cross-sectional view of a radio frequency front end module provided by an embodiment of the present application is provided based on the above-described implementation, Figure 10 As shown in a radio frequency front end module, the pin of the low noise amplifier 12 for connecting the matching inductor is away from the circuit board 17, that is, the pin of the low noise amplifier 12 is located on the side surface of the low noise amplifier 12 away from the circuit board 17. At this time, the pin of the low noise amplifier 12 can be isolated from the ground metal layer 175 by the main body of the low noise amplifier 12, which can effectively reduce the parasitic capacitance C. At this time, the pin of the low noise amplifier 12 for connecting the matching inductor is connected to the uppermost inductor coil (the Nth inductor coil described above) through the lead wire 21. The lead wire 21 can be welded and fixed to the pin of the low noise amplifier 12 and the uppermost inductor coil through the wire bonding process. At this time, the uppermost inductor coil is connected to the pad on the upper surface of the circuit board 17 through the conductive hole, and the lead wire 21 is connected to the pad to connect the uppermost inductor coil.

[0093] Optionally, in the circuit board 17, the dielectric constant of the insulating dielectric layer 173 is less than 3, that is, the circuit board 17 adopts a low dielectric constant dielectric layer. Based on the above formula (1), the parasitic capacitance C can be reduced by a lower dielectric constant ε.

[0094] Optionally, the circuit substrate 17 comprises a first region, a second region and a third region arranged in sequence; the filter 13 is located on the surface of the first region; the low noise amplifier 12 is located on the surface of the third region; the wiring metal layer 172 is located in the second region; in the direction perpendicular to the plane where the substrate 171 is located, the inductor coil 174 has no overlapping part with the first region and the third region. In this way, in the direction perpendicular to the plane where the substrate 171 is located, the inductor coil 174 is located in the region of the circuit substrate 17 between the low noise amplifier 12 and the filter 13, and the inductor coil 174 has no overlapping part with the low noise amplifier 12 and the filter 13. In this way, in the direction perpendicular to the plane where the substrate 171 is located, the inductor coil 174 can avoid overlapping with the low noise amplifier 12 and the filter 13, and the transmission signal in the inductor coil 174 can avoid coupling interference to the low noise amplifier 12 and the filter 13.

[0095] In the embodiments of the present application, in the direction where the substrate 171 points to the wiring metal layer 172, the area of the inductor coil 174 increases in sequence, as shown in the cross-sectional view of each radio frequency front end of the present application, the area of the first inductor coil to the Nth inductor coil increases in sequence. In other embodiments, in the direction where the substrate 171 points to the wiring metal layer 172, the area of the inductor coil 174 can also be arranged to decrease in sequence.

[0096] In the direction where the substrate 171 points to the wiring metal layer 172, when the area of the inductor coil 174 increases in sequence or decreases in sequence, the parasitic capacitance between adjacent inductor coils 174 can be reduced, and the performance of the radio frequency front end module can be improved. Based on the radio frequency front end module provided in the above embodiments, another embodiment of the present application further provides an electronic device, which comprises the radio frequency front end module provided in any one of the embodiments of the above embodiments.

[0097] The electronic device adopts the radio frequency front end module provided in the above embodiments, which can improve the integration, reduce the size of the device, and facilitate the miniaturization design of the device. In addition, the design scheme of the parasitic capacitance in the radio frequency front end module can be optimized to further improve the performance of the radio frequency front end module, so as to optimize the performance of the electronic device.

[0098] The electronic device includes but is not limited to a mobile phone, a tablet computer, a notebook computer, a smart wearable device and other electronic devices with communication function.

[0099] In the specification of the present application, each embodiment is described in a progressive, parallel or progressive and parallel manner. Each embodiment focuses on the difference from other embodiments, and the same or similar parts of each embodiment can be referred to each other. The embodiments provided in the embodiments of the present application can be combined with each other without contradiction.

[0100] It is to be understood that the drawings and description are illustrative of exemplary embodiments and not restrictive. Like reference numerals in different drawings denote like elements. Additionally, for purposes of explanation and ease of understanding, the drawings can exaggerate the thickness of some layers, films, panels, regions, etc. It is to be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements can also be present. In addition, "on" can mean that the element is positioned on or below another element, but not necessarily directly on the other element.

[0101] The terms "upper", "lower", "top", "bottom", "inner", "outer", and the like, refer to the orientation or position of the apparatus or element as shown in the drawings, and are used only to facilitate the description of the application and to more simply identify one element from another, but do not connote or imply necessary or essential orientation or positioning of the apparatus or element, and therefore cannot be construed as limiting the application. When one component is referred to as being "connected" to another component, it can be directly connected to the other component or intervening components can also be present.

[0102] It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. It is also possible in the present application that terms could be used in the art with a different meaning that is equivalent for the ones used herein. It is therefore intended that the present application not be limited to the exact details of construction, practice, or examples shown and described herein. Moreover, the use of the terms first, second, etc. do not denote any order or importance, but rather the terms first, second, etc. are used to identify one element from another. Furthermore, the use of the terms a, an, etc. do not denote a limitation of quantity, but rather denote the presence of at least one of the referenced item. Additionally, the use of the term comprising, including, etc. does not exclude the presence of elements or steps other than those listed in a claim. The use of the articles a and an are intended to include the plural as well as the singular, unless otherwise indicated by context.

[0103] The above description of disclosed embodiments provides enough information to enable those skilled in the art to make and use the application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other embodiments without departing from the spirit or scope of the application. Accordingly, the application is not to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A radio frequency front-end module, characterized in that, The radio frequency front-end module includes: A circuit board, the circuit board including a substrate and multiple wiring metal layers stacked sequentially on one side surface of the substrate, with an insulating dielectric layer between adjacent wiring metal layers; the wiring metal layers include inductors, and the inductors in the wiring metal layers are connected in series to form a matching inductor. A low-noise amplifier is fixed on the surface of the circuit board facing away from the substrate. A filter is fixed on the surface of the circuit board facing away from the substrate. The low-noise amplifier and the filter are connected via the matching inductor.

2. The radio frequency front-end module according to claim 1, characterized in that, The substrate has a grounded metal layer on its surface; The grounding metal layer has the wiring metal layers stacked sequentially on the side of the grounding metal layer away from the substrate, and there is an insulating dielectric layer between the grounding metal layer and the adjacent wiring metal layer.

3. The radio frequency front-end module according to claim 2, characterized in that, The circuit board has N wiring metal layers; in the direction from the substrate to the wiring metal layers, the N wiring metal layers are sequentially the first wiring metal layer to the Nth wiring metal layer, and the inductors in the first wiring metal layer to the Nth wiring metal layer are sequentially the first inductor to the Nth inductor, and the i-th inductor and the (i+1)-th inductor are connected through a first conductive hole, where N is a positive integer greater than 1 and i is a positive integer less than N.

4. The radio frequency front-end module according to claim 3, characterized in that, The matching inductor has a first port and a second port, and inductor coils 1 to N are connected in series between the first port and the second port; the first port is connected to the low-noise amplifier, and the second port is connected to the filter. Wherein, the first port is located in the first wiring metal layer and is connected to the first inductor coil; the second port is located in the Nth wiring metal layer and is connected to the Nth inductor coil; Alternatively, the first port is located on the Nth wiring metal layer and connected to the Nth inductor coil; the second port is located on the 1st wiring metal layer and connected to the 1st inductor coil.

5. The radio frequency front-end module according to claim 2, characterized in that, The low-noise amplifier is used to connect the pins of the matching inductor toward the circuit board. The grounding metal layer includes a cutout area; the pin of the low-noise amplifier used to connect to the matching inductor is perpendicular to the cutout area.

6. The radio frequency front-end module according to claim 5, characterized in that, The pin is connected to the matching inductor via a connecting line, which is perpendicular to the cutout area.

7. The radio frequency front-end module according to claim 2, characterized in that, The low-noise amplifier is used to connect the pins of the matching inductor away from the circuit board. The low-noise amplifier's pins, which are used to connect to the matching inductor, are connected to the uppermost inductor coil via wires.

8. The radio frequency front-end module according to claim 1, characterized in that, The dielectric constant of the insulating dielectric layer is less than 3.

9. The radio frequency front-end module according to claim 1, characterized in that, The circuit board includes at least three wiring metal layers, each of which includes the inductor coil.

10. The radio frequency front-end module according to claim 1, characterized in that, In a direction perpendicular to the plane of the substrate, the inductor is located in the circuit board area between the low-noise amplifier and the filter, and the inductor has no overlap with either the low-noise amplifier or the filter.

11. The radio frequency front-end module according to any one of claims 1-10, characterized in that, In the direction from the substrate to the wiring metal layer, the area of ​​the inductor coil decreases or increases sequentially.

12. An electronic device, characterized in that, Includes the radio frequency front-end module as described in any one of claims 1-11.

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