Semiconductor wafer thickness detection device

Abstract

The utility model discloses a semiconductor wafer thickness detection device, which comprises a plurality of turntables, a plurality of placing grooves are respectively arranged on the turntables in an annular array mode, rotating shafts are arranged at the bottoms of the turntables, bearing seats are arranged at the bottoms of the rotating shafts, and the rotating shafts are in transmission connection through chain wheels and chains. One rotating shaft is in transmission connection with a gear box through a stepping motor, a base of a strip-shaped structure is arranged beside the rotating disc, a supporting column is arranged on the base, the supporting column extends to the position above the rotating disc, an infrared thickness gauge is arranged, and the infrared thickness gauge is located over the containing groove. According to the utility model, the plurality of turntables are matched with the plurality of infrared thickness gauges to measure the thickness of a plurality of wafers at the same time, so that the detection efficiency is improved; by arranging the moving plate, the wafer can be driven to move left and right, multi-point detection can be achieved in cooperation with the infrared thickness gauge, and the detection effect is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to a semiconductor processing technical field, concretely relates to a semiconductor wafer thickness detection device. BACKGROUND

[0002] Wafer refers to the silicon wafer used for making silicon semiconductor circuit, and its raw material is silicon. After high-purity polysilicon is dissolved and added into silicon crystal seed, it is slowly pulled out to form cylindrical monocrystalline silicon. After silicon crystal rods are ground, polished and sliced, silicon wafer pieces are formed, that is, wafers.

[0003] In the processing process, the thickness of the wafer needs to be detected by using a thickness measuring instrument to ensure that the wafer thickness meets the processing requirements. However, most of the existing detection equipment cannot detect the thickness of multiple semiconductor wafers at the same time, resulting in low thickness detection efficiency. UTILITY MODEL CONTENT

[0004] The utility model discloses a semiconductor wafer thickness detection device.

[0005] In order to achieve the above-mentioned purpose, the utility model adopts the technical scheme of a semiconductor wafer thickness detection device, which comprises a plurality of rotating discs, and the innovation point is that a plurality of placing grooves are arranged in an annular array on the rotating disc, a rotating shaft is arranged at the bottom of the rotating disc, a bearing seat is arranged at the bottom of the rotating shaft, chain wheels and chains are used for transmission connection between the rotating shafts, one of the rotating shafts is transmission connected with a stepping motor and a gear box, a strip-shaped base is arranged beside the rotating disc, a supporting column is arranged on the base, the supporting column extends above the rotating disc, and an infrared thickness gauge is arranged, and the infrared thickness gauge is located directly above the placing groove.

[0006] Further, the placing groove is a stepped hole structure.

[0007] Further, the rotating disc is arranged on a moving plate, a pair of slide rail assemblies are arranged below the moving plate, eccentric wheels are arranged on any one side of the moving plate, a connecting rod is hingedly arranged between the eccentric wheels and the moving plate, the eccentric wheels are driven by a motor, and the moving plate moves left and right through the connecting rod when the eccentric wheels rotate.

[0008] Further, the moving range of the moving plate is within the diameter of the wafer.

[0009] After the above structure is adopted, the utility model has the beneficial effects that:

[0010] The utility model discloses a plurality of turntable cooperation multiple infrared thickness gauges can carry out thickness to multiple wafers simultaneously to improve the detection efficiency, through setting up the moving plate can drive wafer and move left and right, cooperation infrared thickness gauge can realize multipoint detection, improve the detection effect. BRIEF DESCRIPTION OF DRAWINGS

[0011] Fig. 1 It is the front view structure schematic diagram of the utility model;

[0012] Fig. 2 It is the overhead structure schematic diagram of the utility model.

[0013] Mark explanation:

[0014] 1 turntable, 2 placing groove, 3 rotating shaft, 4 bearing seat, 5 chain wheel, 6 chain, 7 stepping motor, 8 gear box, 9 base, 10 support column, 11 infrared thickness gauge, 12 moving plate, 13 slide rail assembly, 14 eccentric wheel, 15 connecting rod, 16 motor. DETAILED DESCRIPTION

[0015] The utility model makes further explanation in combination with the drawings.

[0016] In order to make the purpose, technical scheme and advantage of the utility model more clear and obvious, the following in combination with the drawings and specific embodiment, the utility model carries out further detailed explanation.It should be understood that the specific embodiment described here is only used to explain the utility model, and is not used to limit the utility model.

[0017] Reference Figs. 1-2 A semiconductor wafer thickness detection device, including multiple turntable 1, multiple placing groove 2 are arranged in annular array on the turntable 1 respectively, the bottom of turntable 1 is provided with rotating shaft 3, the bottom of rotating shaft 3 is provided with bearing seat 4, rotating shaft 3 is transmission connected using chain wheel 5 and chain 6 between, and one rotating shaft is transmission connected using stepping motor 7 and gear box 8, the lateral of turntable 1 is provided with the base 9 of strip structure, and the base 9 is provided with support column 10, and support column 10 extends to the top of turntable 1, and is provided with infrared thickness gauge 11, and infrared thickness gauge 11 is located just above placing groove 2.Specifically, through setting up multiple turntable 1, and multiple placing groove 2 are set up on the turntable, then cooperate multiple infrared thickness gauges 11, can carry out thickness to multiple wafers simultaneously, and under the action of stepping motor 7 and gear box 8, carry out synchronous rotation, continue the detection of multiple wafers, to improve the detection efficiency.

[0018] In the embodiment, the placing groove 2 is a stepped hole structure, which minimizes the contact area with the wafer, thereby avoiding damage to the wafer.

[0019] In the embodiment, the rotating disc 1 is arranged on the moving plate 12, a pair of slide rail assemblies 13 are arranged below the moving plate 12, eccentric wheels 14 are arranged on any one side of the moving plate 12, connecting rods 15 are hingedly arranged between the eccentric wheels 14 and the moving plate 12, the eccentric wheels 14 are driven by motors 16, and the moving plate 12 is pulled to move leftward and rightward by the connecting rods 15 when the eccentric wheels 14 rotate. The eccentric wheels 14 rotate under the action of the motors 16, thereby pulling the moving plate 12 to move leftward and rightward along the slide rail assemblies 13 through the connecting rods 15. In combination with the infrared thickness gauge, multi-point detection can be realized, and the detection effect is improved.

[0020] In the embodiment, the moving range of the moving plate 12 is within the diameter of the wafer, the positions detected by the infrared thickness gauge 11 are ensured to be within the wafer range, and the detection precision is improved.

[0021] The above description is only used to illustrate the technical scheme of the utility model and is not limited, and other modifications or equivalent replacements of the technical scheme of the utility model made by those skilled in the art should be covered in the claim range of the utility model.

Claims

1. A semiconductor wafer thickness detection device, comprising multiple turntables, characterized in that: The turntable has multiple placement slots arranged in a circular array. A rotating shaft is located at the bottom of the turntable, and a bearing seat is located at the bottom of the rotating shaft. The rotating shafts are connected by sprockets and chains for transmission, and one of the rotating shafts is connected by a stepper motor and a gearbox for transmission. A strip-shaped base is located on the side of the turntable, and a support column is located on the base. The support column extends above the turntable and is equipped with an infrared thickness gauge, which is located directly above the placement slot.

2. The semiconductor wafer thickness detection device according to claim 1, characterized in that: The placement slot has a stepped hole structure.

3. The semiconductor wafer thickness detection device according to claim 1, characterized in that: The turntable is mounted on the movable plate, and a pair of slide rail assemblies are arranged below the movable plate. An eccentric wheel is arranged on either the left or right side of the movable plate. A connecting rod is hinged between the eccentric wheel and the movable plate. The eccentric wheel is driven by a motor. When the eccentric wheel rotates, it pulls the movable plate to move left or right through the connecting rod.

4. The semiconductor wafer thickness detection device according to claim 3, characterized in that: The moving plate's range of motion is within the wafer diameter.

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