Planar optical waveguide chip suitable for high-power coupling

Abstract

The utility model relates to the technical field of photoelectronics, in particular to a planar optical waveguide chip suitable for high-power coupling, which solves the problems of low heat dissipation efficiency and low chip integration level in the prior art, and comprises a substrate and an upper cladding, a core layer is arranged between the substrate and the upper cladding, an optical waveguide is arranged on the core layer, and a deep groove structure is arranged on the upper cladding. The side wall, close to one side of the optical waveguide, of the deep groove structure is provided with heat dissipation protrusions. The beneficial effects of the utility model are that the deep groove structure is integrated on the optical waveguide chip, and the deep groove structure is used as a heat dissipation channel, thereby improving the integration level of the whole system; the deep groove structure and the heat dissipation protrusions in the deep groove structure can increase the surface area of the optical waveguide chip, the heat dissipation efficiency is effectively improved, accumulation of heat generated by high power is reduced, and the situation that the optical waveguide chip is locally overheated is avoided.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of optoelectronic technology, especially a chip suitable for high power coupling. BACKGROUND

[0002] At present, most of the high power coupling optical chips use technologies including multimode fiber coupling, microlens array coupling and end face coupling of integrated optical waveguide. In the case of high power light source input, a large amount of heat will accumulate around the coupling end face and the optical waveguide. If the heat cannot be effectively dissipated, the temperature will be too high, which will affect the transmission efficiency of the optical waveguide and the stability of the chip. The design of the heat dissipation channel is one of the important heat management schemes in the integrated optical system of high power optical chips, laser devices and the like. By designing an efficient heat dissipation channel, the conduction and dispersion of heat can be accelerated, heat accumulation can be prevented, and the stability and performance of the equipment can be improved.

[0003] The patent with publication number CN117954957A in the prior art discloses a heat dissipation device and a semiconductor laser. The heat dissipation device includes a heat sink and a water cooling plate. The semiconductor laser includes a laser chip. The heat sink is arranged on the water cooling plate, and the laser chip is mounted on the heat sink. The water cooling plate is provided with a first heat dissipation channel and a second heat dissipation channel. The first heat dissipation channel corresponds to the position of the laser chip. Therefore, the heat generated by the laser chip can be directly exchanged with the first heat dissipation channel. The heat of the first heat dissipation channel can be transmitted downward through the water cooling plate to achieve heat dissipation for the laser chip and improve the heat dissipation efficiency for the laser chip. At the same time, the heat of the first heat dissipation channel can be transmitted to the second heat dissipation channel through the water cooling plate. The heat in the second heat dissipation channel can be transmitted out through the water cooling plate, which can further improve the heat dissipation efficiency of the semiconductor laser.

[0004] The above-mentioned heat dissipation device and the chip adopt a separate structure. They only rely on simple heat conduction or heat exchange design and cannot fully utilize the surface area of the chip for heat dissipation. The heat dissipation efficiency is still insufficient, especially when high power coupling occurs, which can easily cause local overheating. At the same time, it can cause low system integration, increase the volume and weight, and reduce the reliability of the overall system. UTILITY MODEL CONTENTS

[0005] The utility model provides a plane optical waveguide chip suitable for high power coupling, which solves the problems of low heat dissipation efficiency and low chip integration in the prior art.

[0006] The technical scheme of the utility model is as follows:

[0007] The application discloses a planar optical waveguide chip suitable for high-power coupling, which comprises a substrate and an upper cladding layer, a core layer is arranged between the substrate and the upper cladding layer, an optical waveguide is arranged on the core layer, a deep groove structure is arranged on the upper cladding layer, and a heat dissipation protrusion is arranged on the side wall of the deep groove structure close to the optical waveguide. The surface area of the optical waveguide chip is increased by arranging the deep groove structure and the heat dissipation protrusion on the optical waveguide chip, the heat dissipation efficiency is effectively increased, the accumulation of heat generated by high power is reduced, and the situation that the optical waveguide chip is locally overheated is avoided; and the integration degree of the overall system is improved by arranging the deep groove structure on the optical waveguide chip.

[0008] The number of the deep groove structures is two, and the two deep groove structures are located on the two sides of the optical waveguide. The deep groove structures simultaneously dissipate heat on the two sides of the optical waveguide, ensure uniform heat dissipation, and ensure the heat dissipation efficiency.

[0009] The deep groove structures are arranged along the axis direction of the optical waveguide. The deep groove structures can have consistent heat dissipation efficiency at different positions of the optical waveguide, and the heat accumulation on the optical waveguide chip is avoided.

[0010] The distance between the side wall of the deep groove structure close to the optical waveguide and the optical waveguide is L, and L is greater than 20 mu m. The situation of light leakage caused by the small distance between the deep groove structure and the optical waveguide is avoided.

[0011] The depth of the deep groove structure is H, and H is greater than the sum of the thicknesses of the core layer and the upper cladding layer. When dissipating heat, the heat in the optical waveguide can reach the surface of the optical waveguide chip in a small distance.

[0012] The thickness of the heat dissipation protrusion is equal to the depth of the deep groove structure. The structure of the heat dissipation protrusion is simplified, the deep groove structure and the heat dissipation protrusion can be manufactured by etching when the optical waveguide chip is manufactured, the manufacturing difficulty is reduced, and the manufacturing precision and consistency of the optical waveguide chip are improved.

[0013] One end of the deep groove structure is provided with an opening, and the opening is located on the coupling end face of the optical waveguide chip. The deep groove structure is directly connected with the heat source area of the high-power light source, the deep groove structure can quickly lead out the heat generated by the light source along the surface of the optical waveguide chip, and further dissipate the heat by using natural convection, so that the heat dissipation efficiency is improved.

[0014] The heat dissipation protrusion comprises a plurality of rectangular protrusions arranged side by side. The rectangular protrusions can increase the surface area of the optical waveguide chip and improve the heat dissipation efficiency.

[0015] The heat dissipation protrusion comprises a plurality of triangular protrusions arranged side by side. The triangular protrusions can increase the surface area of the optical waveguide chip and improve the heat dissipation efficiency.

[0016] The heat dissipation protrusion comprises a plurality of arc-shaped protrusions arranged side by side. The arc-shaped protrusions can increase the surface area of the optical waveguide chip and improve the heat dissipation efficiency.

[0017] The utility model discloses the beneficial effect is:

[0018] 1, the deep groove structure is integrally arranged on the optical waveguide chip, and the deep groove structure is used as a heat dissipation channel to improve the integration of the overall system;The deep groove structure and the heat dissipation protrusion in the deep groove structure can increase the surface area of the optical waveguide chip, effectively increase the heat dissipation efficiency, reduce the accumulation of heat generated by high power, and avoid the situation of local overheating of the optical waveguide chip.

[0019] 2, the deep groove structure is provided with an opening on the coupling end face of the optical waveguide chip, and the heat generated by the high-power light source enters the deep groove structure through the opening and is quickly led out along the surface of the optical waveguide chip, improving the heat dissipation efficiency.

[0020] 3, the distance between the deep groove structure and the optical waveguide is greater than 20μm, which avoids the light leakage caused by the small distance between the deep groove structure and the optical waveguide.

[0021] 4, the two sides of the optical waveguide are respectively provided with deep groove structures, and the deep groove structures simultaneously dissipate heat on both sides of the optical waveguide, ensuring uniform heat dissipation and ensuring the heat dissipation efficiency. BRIEF DESCRIPTION OF DRAWINGS

[0022] In order to more clearly illustrate the technical scheme in the embodiments of the utility model or the prior art, the drawings needed to be used in the embodiment or the prior art description will be briefly introduced below, and obviously, the drawings in the following description are only some embodiments of the utility model, and those skilled in the art can obtain other drawings according to these drawings without creating creative labor.

[0023] Figure 1 It is a plane optical waveguide chip structure schematic diagram suitable for high-power coupling for the utility model;

[0024] Figure 2 It is a front view of the plane optical waveguide chip;

[0025] Figure 3 It is a plane optical waveguide chip plan view.

[0026] In the drawing: 1, base, 2, core layer, 3, upper cladding layer, 4, optical waveguide, 5, deep groove structure, 51, heat dissipation protrusion. DETAILED DESCRIPTION

[0027] Clearly, the described embodiments are merely a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of the present application.

[0028] As shown in Embodiment 1, a planar optical waveguide chip suitable for high-power coupling comprises a substrate 1 and an upper cladding layer 3, a core layer 2 is arranged between the substrate 1 and the upper cladding layer 3, an optical waveguide 4 is arranged on the core layer 2, a deep groove structure 5 is arranged on the upper cladding layer 3, and a heat dissipation protrusion 51 is arranged on the side wall of the deep groove structure 5 close to the optical waveguide 4. The deep groove structure 5 is integrally arranged on the optical waveguide chip, and the deep groove structure 5 and the heat dissipation protrusion 51 can effectively increase the surface area of the optical waveguide chip, effectively increase the heat dissipation efficiency, reduce the accumulation of heat generated by high power, avoid the situation of local overheating of the optical waveguide chip, and increase the integration of the overall system. Figure 1 Further, the number of the deep groove structure 5 is two, and the two deep groove structures 5 are located on both sides of the optical waveguide 4. The deep groove structure 5 is arranged along the axis direction of the optical waveguide 4. When dissipating heat, the heat in the optical waveguide 4 is transmitted to both sides, and is dissipated through the two deep groove structures 5, so as to ensure uniform heat dissipation and ensure the heat dissipation efficiency.

[0029] Further, as shown in Embodiment 1, the distance between the side wall of the deep groove structure 5 close to the optical waveguide 4 and the optical waveguide 4 is L, and L is greater than 20 μm. The situation of light leakage caused by too small distance between the deep groove structure 5 and the optical waveguide 4 is avoided.

[0030] Figure 3 Further, as shown in Embodiment 1, the depth of the deep groove structure 5 is H, and H is greater than the sum of the thicknesses of the core layer 2 and the upper cladding layer 3. The minimum distance between the optical waveguide 4 and the deep groove structure 5 is L, and when dissipating heat, the heat in the optical waveguide 4 can reach the surface of the optical waveguide chip through the distance L on the optical waveguide chip.

[0031] Further, the thickness of the heat dissipation protrusion 51 is equal to the depth of the deep groove structure 5. The structural complexity of the heat dissipation protrusion 51 is simplified, and when the optical waveguide chip is manufactured, the deep groove structure 5 and the heat dissipation protrusion 51 can be processed and manufactured by etching from the upper cladding layer 3 downward, so as to effectively reduce the manufacturing difficulty of the deep groove structure 5 and the heat dissipation protrusion 51, and improve the manufacturing precision and consistency of the optical waveguide chip. Figure 2

[0032] Further, the thickness of the heat dissipation protrusion 51 is equal to the depth of the deep groove structure 5. The structural complexity of the heat dissipation protrusion 51 is simplified, and when the optical waveguide chip is manufactured, the deep groove structure 5 and the heat dissipation protrusion 51 can be processed and manufactured by etching from the upper cladding layer 3 downward, so as to effectively reduce the manufacturing difficulty of the deep groove structure 5 and the heat dissipation protrusion 51, and improve the manufacturing precision and consistency of the optical waveguide chip.

[0033] ​​Further, one end of the deep groove structure 5 is provided with an opening, and the opening is located on the coupling end face of the optical waveguide chip. The deep groove structure 5 is directly connected with the high-power light source area, and the deep groove structure 5 can quickly lead the heat generated by the light source along the surface of the optical waveguide chip, and further dissipate the heat by using natural convection, thereby improving the heat dissipation efficiency.

[0034] Further, the heat dissipation protrusion 51 comprises a plurality of rectangular protrusions arranged side by side. The rectangular protrusions can increase the surface area of the optical waveguide chip, thereby improving the heat dissipation efficiency.

[0035] Embodiment 2 differs from Embodiment 1 in that a planar optical waveguide chip suitable for high-power coupling, the heat dissipation protrusion 51 comprises a plurality of triangular protrusions arranged side by side. The triangular protrusions can increase the surface area of the optical waveguide chip, thereby improving the heat dissipation efficiency.

[0036] Embodiment 3 differs from Embodiment 1 in that a planar optical waveguide chip suitable for high-power coupling, the heat dissipation protrusion 51 comprises a plurality of arc-shaped protrusions arranged side by side. The arc-shaped protrusions can increase the surface area of the optical waveguide chip, thereby improving the heat dissipation efficiency.

[0037] The above only describes the preferred embodiments of the present application, and is not intended to limit the present application, and any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A planar optical waveguide chip suitable for high power coupling, comprising a substrate (1) and an upper cladding layer (3), a core layer (2) being provided between the substrate (1) and the upper cladding layer (3), an optical waveguide (4) being provided on the core layer (2), characterized in that The upper cladding layer (3) is provided with a deep groove structure (5), and the side wall of the deep groove structure (5) close to the optical waveguide (4) is provided with a heat dissipation protrusion (51).

2. The planar lightwave chip suitable for high power coupling according to claim 1, wherein, The number of the deep groove structures (5) is two, and the two deep groove structures (5) are located on both sides of the optical waveguide (4).

3. The planar lightwave chip suitable for high power coupling according to claim 1 or 2, characterized in that, The deep groove structures (5) are arranged along the axis direction of the optical waveguide (4).

4. The planar lightwave chip suitable for high power coupling according to claim 3, wherein, The distance between the side wall of the deep groove structure (5) close to the optical waveguide (4) and the optical waveguide (4) is L, and L is greater than 20 μm.

5. The planar lightwave chip suitable for high power coupling according to claim 1 or 4, characterized in that, The depth of the deep groove structure (5) is H, and H is greater than the sum of the thicknesses of the core layer (2) and the upper cladding layer (3).

6. The planar lightwave chip suitable for high power coupling according to claim 5, wherein, The thickness of the heat dissipation protrusion (51) is equal to the depth of the deep groove structure (5).

7. The planar lightwave chip suitable for high power coupling according to claim 1 or 4 or 6, characterized in that, One end of the deep groove structure (5) is provided with an opening, and the opening is located on the coupling end face of the optical waveguide chip.

8. The planar lightwave chip suitable for high power coupling according to claim 7, wherein, The heat dissipation protrusion (51) comprises a plurality of rectangular protrusions arranged side by side.

9. The planar lightwave chip suitable for high power coupling according to claim 7, wherein, The heat dissipation protrusion (51) comprises a plurality of triangular protrusions arranged side by side.

10. The planar lightwave chip suitable for high power coupling according to claim 7, wherein, The heat dissipation protrusion (51) comprises a plurality of arc-shaped protrusions arranged side by side.

Images