Switch integration module of energy storage converter and energy storage converter

Abstract

The utility model discloses a switch integration module of an energy storage converter and the energy storage converter, the switch integration module comprises switch circuits of a plurality of function units and a plurality of substrates, the switch circuits of the plurality of function units comprise a power generation switch circuit, a charging switch circuit and a grid-connected switch circuit, the power generation switch circuit is used for connecting power generation equipment and a direct current bus, and the charging switch circuit is used for connecting the power generation equipment and the direct current bus. The charging switch circuit is used for connecting a direct current bus and energy storage equipment, the grid-connected switch circuit is used for connecting the direct current bus and an external power grid, and the switch circuits of the plurality of functional units are fixed on the plurality of substrates. The switching circuits of the plurality of functional units are fixed on the at least two substrates, the size of a single substrate is reduced, and the structural strength of the single substrate is enhanced, so that the risk of breakage during processing can be reduced, and the yield of the substrates is improved.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of new energy energy storage application, and particularly relates to a switching integrated module of an energy storage converter and the energy storage converter. BACKGROUND

[0002] A light storage charging integrated system is an energy system integrating functions such as photovoltaic power generation, energy storage, inverter grid connection and the like. Due to different power consumption modes of each function, the light storage charging integrated system often needs to perform current conversion through a PCS (Power Conversion System, energy storage converter). Specifically, the PCS often has a large number of electronic components such as IGBTs (Insulate-Gate Bipolar Transistor, Insulated Gate Bipolar Transistor), diodes and the like. The large number of electronic components form the following functional units: a power generation unit for connecting to a DC bus and a photovoltaic power generation device, a charging unit for connecting to the DC bus and an energy storage device, and a grid connection unit for connecting to the DC bus and an external power grid, so as to achieve current conversion between the devices. These electronic components are often dispersedly arranged inside the PCS, which occupies a large amount of space, thereby causing the PCS to have a large volume.

[0003] In the related art, a switching integrated module is proposed. The switching integrated module integrates the switching circuits composed of IGBTs and diodes in the above-mentioned multiple functional units onto one substrate, so as to reduce the wiring required by the IGBTs and diodes, thereby saving the space inside the PCS.

[0004] However, in the above structure, the size of one substrate is large, and the substrate is prone to breakage during processing, so that the yield cannot be guaranteed. INVENTION CONTENTS

[0005] The present disclosure provides a switching integrated module of an energy storage converter and the energy storage converter, which can solve the above technical problems in the related art. The technical solution is as follows:

[0006] In a first aspect, a switching integrated module of an energy storage converter is provided, and the switching integrated module includes switching circuits of multiple functional units and multiple substrates.

[0007] The switching circuits of the multiple functional units include power generation switching circuits, charging switching circuits and grid connection switching circuits. The power generation switching circuits are used to connect power generation devices and a DC bus. The charging switching circuits are used to connect the DC bus and energy storage devices. The grid connection switching circuits are used to connect the DC bus and an external power grid. The switching circuits of the multiple functional units are fixed on the multiple substrates.

[0008] In a possible implementation, the power generation switch circuit is located on a first substrate of the plurality of substrates, and includes two bridge arms, each of which includes a boost circuit and a bypass circuit connected in parallel with each other, the boost circuit includes a first IGBT, a first diode and a second diode, the first IGBT is connected in anti-parallel with the first diode, the second diode and the first IGBT are connected in series after being connected in anti-parallel with the first diode, and the bypass circuit includes a third diode; wherein,

[0009] The third diode in the two bridge arms and the second diode are fixed to a first conductive sheet of the first substrate, the first IGBT and the first diode of one of the two bridge arms are fixed to a second conductive sheet of the first substrate, and the first IGBT and the first diode of the other are fixed to a third conductive sheet of the first substrate.

[0010] In a possible implementation, the power generation switch circuit includes a first DC+ terminal and a first DC- terminal, the first DC+ terminal is fixed to the first conductive sheet and is used to be connected with the DC bus, and the first DC- terminal is fixed to a sixth conductive sheet of the first substrate and is used to connect the DC bus and the two bridge arms.

[0011] In a possible implementation, the power generation switch circuit includes a first input terminal, a second input terminal, a third input terminal and a fourth input terminal, the first input terminal is fixed to the second conductive sheet, the second input terminal is fixed to the third conductive sheet, the third input terminal is fixed to a fourth conductive sheet of the first substrate and is used to be connected with the gate of the first IGBT in one of the two bridge arms, and the fourth input terminal is fixed to a fifth conductive sheet of the first substrate and is used to be connected with the gate of the first IGBT in the other of the two bridge arms; wherein,

[0012] The second conductive sheet, the fourth conductive sheet, the third conductive sheet and the fifth conductive sheet are arranged in a first direction and are located between the first conductive sheet and the sixth conductive sheet in a second direction, the first direction is the length direction of the plurality of substrates, and the second direction is the width direction of the plurality of substrates.

[0013] In a possible implementation, the charging switch circuit is located on a first substrate of the plurality of substrates, and includes two bridge arms connected in parallel with each other, a second DC+ terminal and a second DC- terminal;

[0014] The two bridge arms each include an upper half bridge and a lower half bridge, the upper half bridges of the two bridge arms are fixed to a seventh conductive sheet of the first substrate, and the lower half bridge of one of the two bridge arms is fixed to an eighth conductive sheet of the first substrate, and the lower half bridge of the other of the two bridge arms is fixed to a ninth conductive sheet of the first substrate.

[0015] The second DC+ terminal is fixed to the seventh conductive sheet, the second DC- terminal is fixed to a tenth conductive sheet of the first substrate, and is used to connect a DC bus to the lower half bridges of the two bridge arms.

[0016] In a possible implementation, the charging switch circuit includes two bridge arms connected in parallel with each other.

[0017] The upper half bridge of one of the two bridge arms includes at least two first switch components connected in parallel, and the lower half bridge includes at least two second switch components connected in parallel, the first switch components include a second IGBT and a fourth diode connected in anti-parallel, and the second switch components include a third IGBT and a fifth diode connected in anti-parallel.

[0018] The upper half bridge of the other of the two bridge arms includes at least two third switch components connected in parallel, and the lower half bridge includes at least two fourth switch components connected in parallel, the third switch components include a fourth IGBT and a sixth diode connected in anti-parallel, and the fourth switch components include a fifth IGBT and a seventh diode connected in anti-parallel.

[0019] In a possible implementation, the eighth conductive sheet has a first portion and a second portion connected to each other, the first portion and the second portion are arranged along a second direction and form an avoiding gap, the seventh conductive sheet is located on a side of the first portion away from the second portion, the ninth conductive sheet and the tenth conductive sheet are located in the avoiding gap, the ninth conductive sheet, the tenth conductive sheet, and the second portion are arranged in a first direction, the first direction is a length direction of the plurality of substrates, and the second direction is a width direction of the plurality of substrates.

[0020] In a possible implementation, the grid-connected switch circuit is located on a second substrate of the plurality of substrates, and includes an inverter switch circuit and an active filter switch circuit connected in parallel with each other, the inverter switch circuit includes two bridge arms, the two bridge arms each include an upper half bridge and a lower half bridge, the upper half bridges of the two bridge arms are fixed to an eleventh conductive sheet on the second substrate, and the lower half bridge of one of the two bridge arms is fixed to a twelfth conductive sheet on the second substrate, and the lower half bridge of the other of the two bridge arms is fixed to a thirteenth conductive sheet on the second substrate.

[0021] In a possible implementation, the grid-connected switch circuit comprises a third DC+ terminal and a third DC- terminal, the third DC+ terminal is fixed to the eleventh conductive sheet and is used to be connected with the DC bus, and the third DC- terminal is fixed to the fourteenth conductive sheet and is used to be connected with the lower half-bridge of the two bridge arms of the inverter switch circuit.

[0022] In a possible implementation, the active filter switch circuit comprises one upper half-bridge and one lower half-bridge, the one upper half-bridge is fixed to the eleventh conductive sheet, and the one lower half-bridge is fixed to the fifteenth conductive sheet on the second substrate.

[0023] In a possible implementation, the eleventh conductive sheet has a third part and a fourth part connected with each other, the third part and the fourth part are arranged along a second direction, the upper half-bridges of the two bridge arms are located on the third part, the one upper half-bridge is located on the fourth part, the fourth part is arranged in a first direction and is spaced from the fifteenth conductive sheet, and the eleventh conductive sheet, the twelfth conductive sheet, the thirteenth conductive sheet and the fourteenth conductive sheet are arranged in the second direction, the first direction is the length direction of the plurality of substrates, and the second direction is the width direction of the plurality of substrates.

[0024] In a second aspect, a switching integrated module is provided.

[0025] The technical solution provided by the present disclosure has at least the following beneficial effects:

[0026] Compared with the related art, the switching circuits of the plurality of functional units are fixed on at least two substrates, the size of a single substrate is reduced, the structural strength of the single substrate is improved, the risk of fracture of the single substrate during processing is reduced, and the yield of the substrate is improved.

[0027] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present disclosure. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative labor.

[0029] Figure 1 is a structural schematic diagram of a switching integrated module provided by the embodiments of the present disclosure;

[0030] Figure 2 is a structural schematic diagram of a first substrate and related electronic elements in a switching integrated module provided by an embodiment of the present disclosure;

[0031] Figure 3 is a circuit topology diagram of electronic elements on a first substrate in a switching integrated module provided by an embodiment of the present disclosure;

[0032] Figure 4 is a structural schematic diagram of a second substrate and related electronic elements in a switching integrated module provided by an embodiment of the present disclosure;

[0033] Figure 5 is a circuit topology diagram of electronic elements on a second substrate in a switching integrated module provided by an embodiment of the present disclosure.

[0034] Reference signs:

[0035] 1, switching circuit;

[0036] 11, generating switching circuit; 11a, first IGBT; 11b, first diode; 11c, second diode; 11d, third diode; 11e, first input terminal; 11f, second input terminal; 11g, third input terminal; 11h, fourth input terminal; 11i, first DC+ terminal; 11j, first DC- terminal; 11k, thermistor; 11l, bypass terminal;

[0037] 12, charging switching circuit; 12a, second DC+ terminal; 12b, second DC- terminal; 12c, second IGBT; 12d, fourth diode; 12e, third IGBT; 12f, fifth diode; 12g, fourth IGBT; 12h, sixth diode; 12i, fifth IGBT; 12j, seventh diode;

[0038] 13, grid-connected switching circuit; 13a, third DC+ terminal; 13b, third DC- terminal; 13c, fourth DC- terminal;

[0039] 131, inverter switching circuit; 131a, sixth IGBT; 131b, eighth diode; 131c, seventh IGBT; 131d, ninth diode; 131e, eighth IGBT; 131f, twelfth diode; 131g, ninth IGBT; 131h, eleventh diode; 131i, twelfth IGBT; 131j, fourteenth diode; 131k, thirteenth IGBT; 131l, fifteenth diode; 131m, intermediate output terminal;

[0040] 132, active filter switching circuit; 132a, tenth IGBT; 132b, tenth diode; 132c, eleventh IGBT; 132d, thirteenth diode;

[0041] 2, substrate; 2a, first substrate; 2b, second substrate;

[0042] 21, insulating layer;

[0043] 22, conductive sheet; 22a, first conductive sheet; 22b, second conductive sheet; 22c, third conductive sheet; 22d, fourth conductive sheet; 22e, fifth conductive sheet; 22f, sixth conductive sheet; 22g, seventh conductive sheet; 22h, eighth conductive sheet; 22i, ninth conductive sheet; 22j, tenth conductive sheet; 22k, eleventh conductive sheet; 22l, twelfth conductive sheet; 22m, thirteenth conductive sheet; 22n, fourteenth conductive sheet; 22o, fifteenth conductive sheet; 22p, sixteenth conductive sheet; 22q, seventeenth conductive sheet; 22r, eighteenth conductive sheet; 22s, nineteenth conductive sheet; 22t, twentieth conductive sheet; 22u, twenty-first conductive sheet; 22v, twenty-second conductive sheet; 22w, twenty-third conductive sheet; 22x, twenty-fourth conductive sheet; 22y, twenty-fifth conductive sheet; 22z, twenty-sixth conductive sheet; 220a, twenty-seventh conductive sheet; 220b, twenty-eighth conductive sheet; 220c, twenty-ninth conductive sheet;

[0044] 23, first region; 24, second region; 25, third region; 26, fourth region. DETAILED DESCRIPTION

[0045] To make the objectives, technical solutions and advantages of the present disclosure clearer, the embodiments of the present application will be further described in detail below with reference to the drawings.

[0046] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict. The present application will be described in detail below with reference to the drawings and in combination with the embodiments.

[0047] The switching integrated module of the energy storage converter provided in the embodiments of the present disclosure comprises a plurality of functional unit switching circuits 1 and a plurality of substrates 2. Figure 1 The plurality of functional unit switching circuits 1 comprise a power generation switching circuit 11, a charging switching circuit 12 and 13, the power generation switching circuit 11 is used to connect a power generation device and a DC bus, the charging switching circuit 12 is used to connect the DC bus and an energy storage device, and the grid-connected switching circuit 13 is used to connect the DC bus and an external power grid, and the plurality of functional unit switching circuits 1 are fixed on the plurality of substrates 2.

[0048] In this way, the switch circuit 1 of the plurality of functional units is fixed on at least two substrates 2, the size of a single substrate 2 is reduced, the structural strength of the single substrate 2 is enhanced, so that the risk of breakage during processing can be reduced, and the yield of the substrate 2 is improved. Moreover, the switch circuit 1 of the plurality of functional units is fixed on at least two substrates 2, so that the electronic components on the switch integrated module can be dispersed to ensure the integration degree and reduce the heat dissipation pressure of the switch integrated module. In addition, the switch circuit 1 of the plurality of functional units is fixed on at least two substrates 2, which can facilitate the connection of the substrate 2 with other structures, and improve the convenience of the connection.

[0049] The substrate 2 includes an insulating layer 21 and a plurality of conductive sheets 22 connected to each other, the plurality of conductive sheets 22 are fixed on the insulating layer 21 at intervals, and the plurality of conductive sheets 22 have a solder layer, each electronic component of the switch circuit 1 of the plurality of functional units is soldered on the conductive sheet 22, and one interface of the electronic component soldered on the conductive sheet 22 is in communication with the conductive sheet 22. At this time, the conductive sheet 22 can function as a wire, and the other interface of the electronic component on one of the conductive sheets 22 can be electrically connected to other conductive sheets 22 or electronic components through a lead wire.

[0050] Optionally, the substrate 2 can be a DBC (Direct Bond Copper) ceramic substrate 2, that is, the insulating layer 21 can be a ceramic sheet, and the conductive sheet 22 can be a copper foil, so as to improve the heat dissipation capacity of the substrate 2.

[0051] In some embodiments, the power generation switch circuit 11 and the charging switch circuit 12 can be integrated on the same substrate 2. The power generation unit and the charging unit often work at the same time, and in some cases, only power generation and charging are required. The switch circuits of the two can be arranged on the same substrate 2, and can also be used as separate modules.

[0052] In one embodiment of the embodiment of the present disclosure, please refer to Figure 2 and Figure 3The power generation switch circuit 11 is located on a first substrate 2a of the plurality of substrates 2, and includes two bridge arms, each of which includes a boost circuit and a bypass circuit connected in parallel with each other, the boost circuit including a first IGBT 11a, a first diode 11b and a second diode 11c, the first IGBT 11a and the first diode 11b being connected in anti-parallel, the second diode 11c and the first IGBT 11a being connected in series with the first diode 11b after being connected in anti-parallel, and the bypass circuit including a third diode 11d. Among them, the third diode 11d and the second diode 11c in the two bridge arms are fixed to the first conductive sheet 22a of the first substrate 2a, the first IGBT 11a and the first diode 11b of one of the two bridge arms are fixed to the second conductive sheet 22b of the first substrate 2a, and the first IGBT 11a and the first diode 11b of the other are fixed to the third conductive sheet 22c of the first substrate 2a.

[0053] Specifically, the power generation switch circuit 11 includes a first bridge arm and a second bridge arm, each of which includes a boost circuit and a bypass circuit, the third diode 11d and the second diode 11c in the first bridge arm and the second bridge arm are arranged on the first conductive sheet 22a, the first IGBT 11a and the first diode 11b in the first bridge arm are arranged on the second conductive sheet 22b, and the first IGBT 11a and the first diode 11b in the second bridge arm are arranged on the third conductive sheet 22c. The IGBT on the first IGBT 11a in the first bridge arm is connected to the first conductive sheet 22a through a wire to realize the connection of the circuit. In addition, by connecting the first IGBT 11a and the first diode 11b in anti-parallel, damage to the first IGBT 11a due to sudden changes in current when opening and closing can be prevented.

[0054] Specifically, as shown in Figure 2 , one interface of the second diode 11c of the first bridge arm is connected to the second conductive sheet 22b through a wire, and the other interface of the second diode 11c of the first bridge arm is connected to the first conductive sheet 22a, thereby realizing the conduction of current between the second conductive sheet 22b and the first conductive sheet 22a.

[0055] In this way, the third diode 11d and the second diode 11c in the two bridge arms are arranged on the first conductive sheet 22a, which can reduce the number of conductive sheets 22 they need to occupy, thereby reducing the area of the substrate 2 they occupy, and further reducing the size of the switch integrated module.

[0056] In one embodiment of the present disclosure, please refer to Figure 2 and Figure 3The power generation switch circuit 11 comprises a first DC+ terminal 11i and a first DC- terminal 11j, the first DC+ terminal 11i is fixed to the first conductive sheet 22a and is used to be connected with the DC bus, and the first DC- terminal 11j is fixed to the sixth conductive sheet 22f of the first substrate 2a and is used to connect the DC bus and the two bridge arms.

[0057] In this way, since the first bridge arm and the second bridge arm are connected in parallel and both are connected with the power generation device and the DC bus, the first DC+ terminal 11i and the first DC- terminal 11j are shared by the two bridge arms, the number of terminals used when the first bridge arm and the second bridge arm are connected with the DC bus can be reduced, thereby the number of conductive sheets 22 occupied by the first DC+ terminal 11i and the first DC- terminal 11j can be reduced, and the size of the switch integrated module can be reduced. Moreover, the first DC+ terminal 11i is arranged on the first conductive sheet 22a, the area of the first conductive sheet 22a can be maximally used, thereby the size of the switch integrated module can be further reduced.

[0058] In one embodiment of the present disclosure, please refer to Figure 2 and Figure 3 The power generation switch circuit 11 comprises a first input terminal 11e, a second input terminal 11f, a third input terminal 11g and a fourth input terminal 11h, the first input terminal 11e is fixed to the second conductive sheet 22b, the second input terminal 11f is fixed to the third conductive sheet 22c, the third input terminal 11g is fixed to the fourth conductive sheet 22d of the first substrate 2a and is used to be connected with the gate of the first IGBT 11a on one of the two bridge arms, and the fourth input terminal 11h is fixed to the fifth conductive sheet 22e of the first substrate 2a and is used to be connected with the gate of the first IGBT 11a on the other of the two bridge arms. The second conductive sheet 22b, the fourth conductive sheet 22d, the third conductive sheet 22c and the fifth conductive sheet 22e are arranged in the first direction and are located between the first conductive sheet 22a and the sixth conductive sheet 22f in the second direction, the first direction is the length direction of the plurality of substrates 2, and the second direction is the width direction of the plurality of substrates 2.

[0059] In this way, the first input terminal 11e and the first IGBT 11a and the first diode 11b of the first bridge arm are fixed on the same conductive sheet 22, and the second input terminal 11f and the first IGBT 11a and the first diode 11b of the second bridge arm are fixed on the same conductive sheet 22, thereby the integration degree of the switch integrated module can be improved. Moreover, the second conductive sheet 22b, the fourth conductive sheet 22d, the third conductive sheet 22c and the fifth conductive sheet 22e are arranged in the first direction and are located between the first conductive sheet 22a and the sixth conductive sheet 22f in the second direction, thereby the wiring can be facilitated.

[0060] In some embodiments, the first substrate 2a is further provided with a thermistor 11k, one end of which is fixed on the sixteenth conductive sheet 22p and the other end is fixed on the seventeenth conductive sheet 22q, and the sixteenth conductive sheet 22p and the seventeenth conductive sheet 22q are located at the side of the third conductive sheet 22c and the first conductive sheet 22a, which is a position with high temperature in use. The thermistor 11k is used for detecting the position, so that the temperature information of the position can be obtained in time to prevent overheating of the position.

[0061] In some embodiments, the bypass circuit further comprises a bypass terminal 11l, the bypass terminal 11l of the first bridge arm is located on the eighteenth conductive sheet 22r, the bypass terminal 11l of the second bridge arm is located on the nineteenth conductive sheet 22s, the first conductive sheet 22a has a protruding portion and a body portion, the protruding portion is located at the side of the body portion away from the second conductive sheet 22b in the width direction of the substrate 2, at least one first DC+ terminal 11i is located on the protruding portion, the eighteenth conductive sheet 22r and the nineteenth conductive sheet 22s are located on both sides of the protruding portion, and the bypass terminals 11l of the first bridge arm and the second bridge arm are on the same straight line as the at least one first DC+ terminal 11i.

[0062] In one embodiment of the embodiments of the present disclosure, please refer to Figure 2 and Figure 3 The charging switch circuit 12 is located on the first substrate 2a of the plurality of substrates 2, and comprises two bridge arms connected in parallel with each other, a second DC+ terminal 12a and a second DC- terminal 12b. Each of the two bridge arms comprises an upper half bridge and a lower half bridge, the upper half bridges of the two bridge arms are fixed on the seventh conductive sheet 22g of the first substrate 2a, the lower half bridge of one of the two bridge arms is fixed on the eighth conductive sheet 22h of the first substrate 2a, and the lower half bridge of the other of the two bridge arms is fixed on the ninth conductive sheet 22i of the first substrate 2a, the second DC+ terminal 12a is fixed on the seventh conductive sheet 22g, the second DC- terminal 12b is fixed on the tenth conductive sheet 22j of the first substrate 2a, and is used to connect the DC bus with the lower half bridges of the two bridge arms.

[0063] In this way, the upper half bridges of the two bridge arms have similar functions and are directly connected in parallel in the circuit topology, and are arranged on the seventh conductive sheet 22g, which can further optimize the space on the first substrate 2a to reduce the area of the first substrate 2a and reduce the size of the first substrate 2a. In addition, the second DC+ terminal 12a is also arranged on the seventh conductive sheet 22g, and the lower half bridges of the two bridge arms share the second DC- terminal 12b, so that the size of the first substrate 2a can be further reduced.

[0064] Specifically, the charging switch circuit 12 includes a third bridge arm and a fourth bridge arm, which are connected to the DC bus through the second DC+ terminal 12a and the second DC- terminal 12b, to charge the energy storage device through the DC bus. In this way, the power generation device is connected to the DC bus, so that the power generation device can transmit the generated power to the energy storage device through the DC bus, and the external power grid is also connected to the DC bus, so that the external power grid can also transmit the power to the energy storage device through the DC bus.

[0065] In an embodiment of the present disclosure, the charging switch circuit 12 includes two bridge arms connected in parallel. The upper half bridge of one of the two bridge arms includes at least two first switch components connected in parallel, and the lower half bridge includes at least two second switch components connected in parallel, the first switch component includes a second IGBT 12c and a fourth diode 12d connected in anti-parallel, and the second switch component includes a third IGBT 12e and a fifth diode 12f connected in anti-parallel; the upper half bridge of the other of the two bridge arms includes at least two third switch components connected in parallel, and the lower half bridge includes at least two fourth switch components connected in parallel, the third switch component includes a fourth IGBT 12g and a sixth diode 12h connected in anti-parallel, and the fourth switch component includes a fifth IGBT 12i and a seventh diode 12j connected in anti-parallel.

[0066] In this way, compared with the scheme in the related art in which only one set of switch components is used in the upper half bridge and the lower half bridge of a single bridge arm, multiple switch components are arranged on the upper half bridge and the lower half bridge of the two bridge arms, and the multiple switch components can share the current in the upper half bridge and the lower half bridge of a single bridge arm, so that the current in a single switch component can be prevented from being too large, and the overheating or overloading of the second IGBT 12c, the third IGBT 12e, the fourth IGBT 12g, or the fifth IGBT 12i can be prevented.

[0067] Specifically, the upper half bridge of the third bridge arm includes at least two parallel first switch assemblies, each of which includes a second IGBT 12c and a fourth diode 12d in anti-parallel connection, the lower half bridge of the third bridge arm includes at least two parallel second switch assemblies, each of which includes a third IGBT 12e and a fifth diode 12f in anti-parallel connection, the upper half bridge of the fourth bridge arm includes at least two parallel third switch assemblies, each of which includes a fourth IGBT 12g and a sixth diode 12h in anti-parallel connection, and the lower half bridge of the fourth bridge arm includes at least two parallel third switch assemblies, each of which includes a fifth IGBT 12i and a seventh diode 12j in anti-parallel connection. The second IGBT 12c, the fourth diode 12d, the fourth IGBT 12g, the sixth diode 12h and the second DC+ terminal 12a are arranged on the seventh conductive sheet 22g, the third IGBT 12e and the fifth diode 12f are arranged on the eighth conductive sheet 22h, the fifth IGBT 12i and the seventh diode 12j are arranged on the ninth conductive sheet 22i, and the second DC- terminal 12b is arranged on the tenth conductive sheet 22j.

[0068] In one embodiment of the present disclosure, please refer to Figure 2 and Figure 3 The eighth conductive sheet 22h has a first portion and a second portion connected to each other, the first portion and the second portion are arranged along a second direction and form an avoiding gap, the seventh conductive sheet 22g is located on the side of the first portion away from the second portion, the ninth conductive sheet 22i and the tenth conductive sheet 22j are located in the avoiding gap, the ninth conductive sheet 22i, the tenth conductive sheet 22j and the second portion are arranged along a first direction, the first direction is the length direction of the plurality of substrates 2, and the second direction is the width direction of the plurality of substrates 2.

[0069] In this way, the arrangement of each conductive sheet 22 on the first substrate 2a can be facilitated, the layout on the first substrate 2a can be optimized, the area of the first substrate 2a can be reduced, and the size of the switch integrated module can be reduced.

[0070] In some embodiments, the third IGBT 12e and the fifth diode 12f are located in the second portion, and a wiring terminal is fixed to the first portion and located close to the edge of the first substrate 2a. The tenth conductive sheet 22j has a fifth portion and a sixth portion, the fifth portion and the sixth portion are arranged along the second direction, the seventh diode and the fifth IGBT 12i are located in the sixth portion, and a wiring terminal is fixed to the fifth portion and located close to the edge of the first substrate 2a.

[0071] In some embodiments, the first substrate 2a is further fixed with a twenty-first conductive sheet 22u, a twenty-second conductive sheet 22v, a twenty-third conductive sheet 22w and a twenty-fourth conductive sheet 22x, and each of the four conductive sheets is provided with a terminal. The twenty-first conductive sheet 22u, the twenty-second conductive sheet 22v, the twenty-third conductive sheet 22w and the twenty-fourth conductive sheet 22x are located on the side of the seventh conductive sheet 22g away from the eighth conductive sheet 22h, and the twenty-second conductive sheet 22v and the twenty-fourth conductive sheet 22x are located close to the edge of the first substrate 2a, the twenty-first conductive sheet 22u and the twenty-third conductive sheet 22w are spaced apart along the first direction, and the straight line where the terminals on the twenty-first conductive sheet 22u and the twenty-third conductive sheet 22w are located extends along the first direction; the twenty-second conductive sheet 22v and the twenty-fourth conductive sheet 22x are spaced apart along the first direction, and the straight line where the terminals on the twenty-second conductive sheet 22v and the twenty-fourth conductive sheet 22x are located extends along the first direction; the twenty-first conductive sheet 22u and the twenty-second conductive sheet 22v are spaced apart along the second direction, and the straight line where the terminals on the twenty-first conductive sheet 22u and the twenty-second conductive sheet 22v are located extends along the second direction; the twenty-third conductive sheet 22w and the twenty-fourth conductive sheet 22x are spaced apart along the second direction, and the straight line where the terminals on the twenty-third conductive sheet 22w and the twenty-fourth conductive sheet 22x are located extends along the second direction.

[0072] The gate of the fourth IGBT is connected to the twenty-first conductive sheet 22u through a wire, the gate of the second IGBT is connected to the twenty-third conductive sheet 22w through a wire, so as to control the fourth IGBT and the second IGBT, the conductive end of the fourth IGBT is connected to the twenty-second conductive sheet 22v through a wire, and the conductive end of the second IGBT is connected to the twenty-fourth conductive sheet 22x through a wire, so as to be connected to other electronic elements through the terminals of the twenty-first conductive sheet 22u and the twenty-fourth conductive sheet 22x. Since the twenty-second conductive sheet 22v and the twenty-fourth conductive sheet 22x are located close to the edge of the first substrate 2a, the twenty-first conductive sheet 22u can be easily connected to other electronic elements.

[0073] In some embodiments, the first substrate 2a further has a twenty-fifth conductive sheet 22y, a twenty-sixth conductive sheet 22z, a twenty-seventh conductive sheet 220a and a twenty-eighth conductive sheet 220b fixed thereon, and each of the four conductive sheets is provided with a terminal. The twenty-fifth conductive sheet 22y and the twenty-sixth conductive sheet 22z are located on the side of the sixth part of the ninth conductive sheet 22i away from the tenth conductive sheet 22j, and the twenty-fifth conductive sheet 22y and the twenty-sixth conductive sheet 22z are spaced apart along the first direction, and the twenty-seventh conductive sheet 220a and the twenty-eighth conductive sheet 220b are located on the side of the second part away from the tenth conductive sheet 22j, and the twenty-seventh conductive sheet 220a and the twenty-eighth conductive sheet 220b are spaced apart along the first direction. The terminals on the twenty-fifth conductive sheet 22y, the twenty-sixth conductive sheet 22z, the twenty-seventh conductive sheet 220a and the twenty-eighth conductive sheet 220b are on the same straight line, and the straight line extends along the first direction.

[0074] In the embodiment, the gate of the fifth IGBT 12i is connected to the twenty-fifth conductive sheet 22y through a wire, the gate of the third IGBT 12e is connected to the twenty-seventh conductive sheet 220a through a wire, so as to control the fifth IGBT 12i and the third IGBT 12e, the conductive end of the fifth IGBT 12i is connected to the twenty-sixth conductive sheet 22z through a wire, and the conductive end of the third IGBT 12e is connected to the twenty-eighth conductive sheet 220b through a wire, so as to be connected to other electronic elements through the terminals on the twenty-sixth conductive sheet 22z and the twenty-eighth conductive sheet 220b.

[0075] In some embodiments, the second DC+ terminal 12a and the second DC- terminal 12b are on the same straight line, on the one hand, it can be convenient to connect electronic elements such as bus capacitors between the two terminals, and on the other hand, it can make the main power circuits of the third bridge arm and the fourth bridge arm symmetrical to each other, so as to reduce the difference between the two.

[0076] The charging switch circuit 12 includes two output terminals for being connected to devices. Optionally, one of the output terminals is arranged on the eighth conductive sheet 22h, and the other output terminal is arranged on the ninth conductive sheet 22i, so as to further reduce the number of conductive sheets 22 required by the output terminals, thereby reducing the difficulty of producing the substrate 2. Optionally, the two output terminals are arranged close to the edge of the first substrate 2a, so as to facilitate wiring with other electronic elements.

[0077] In some embodiments, as shown in FIG. 1, Figure 1 The first substrate 2a includes a first region 23 and a second region 24, the first region 23 and the second region 24 are arranged along the length direction of the first substrate 2a and are electrically isolated, the power generation switch circuit 11 is located in the first region 23, and the charging switch circuit 12 is located in the second region 24.

[0078] In one implementation of the embodiments of the present disclosure, referring to Figure 4 and Figure 5 The grid-connected switch circuit 13 is located on the second substrate 2b of the plurality of substrates 2, and includes an inverter switch circuit 131 and an active filter switch circuit 132 connected in parallel with each other. The inverter switch circuit 131 includes two bridge arms, each of which includes an upper half bridge and a lower half bridge. The upper half bridges of the two bridge arms are fixed to the eleventh conductive sheet 22k on the second substrate 2b, and the lower half bridge of one of the two bridge arms is fixed to the twelfth conductive sheet 22l on the second substrate 2b, and the lower half bridge of the other of the two bridge arms is fixed to the thirteenth conductive sheet 22m on the second substrate 2b.

[0079] In this way, the upper half bridges of the two bridge arms of the inverter switch circuit 131 have similar functions and are directly connected in parallel in the circuit topology. By arranging the upper half bridges on the eleventh conductive sheet 22k, the space on the second substrate 2b can be further optimized, so as to reduce the area of the second substrate 2b and the size of the switch integrated module.

[0080] Specifically, the inverter switch circuit 131 includes a fifth bridge arm and a sixth bridge arm. The upper half bridge of the fifth bridge arm includes a sixth IGBT 131a and an eighth diode 131b connected in anti-parallel, and the lower half bridge of the fifth bridge arm includes a seventh IGBT 131c and a ninth diode 131d connected in anti-parallel. The upper half bridge of the sixth bridge arm includes an eighth IGBT 131e and a twelfth diode 131f connected in anti-parallel, and the lower half bridge of the sixth bridge arm includes a ninth IGBT 131g and an eleventh diode 131h connected in anti-parallel. The sixth IGBT 131a, the eighth diode 131b, the eighth IGBT 131e, and the twelfth diode 131f are arranged on the eleventh conductive sheet 22k, the seventh IGBT 131c and the ninth diode 131d are arranged on the twelfth conductive sheet 22l, and the ninth IGBT 131g and the eleventh diode 131h are arranged on the thirteenth conductive sheet 22m.

[0081] In one implementation of the embodiments of the present disclosure, the grid-connected switch circuit 13 includes a third DC+ terminal 13a and a third DC- terminal 13b. The third DC+ terminal 13a is fixed to the eleventh conductive sheet 22k and is used to be connected to the DC bus, and the third DC- terminal 13b is fixed to the fourteenth conductive sheet 22n and is used to be connected to the lower half bridges of the two bridge arms of the inverter switch circuit 131.

[0082] In this way, arranging the third DC+ terminal 13a on the eleventh conductive sheet 22k can reduce the number of conductive sheets 22 occupied by the third DC+ terminal 13a, thereby reducing the size of the second substrate 2b. Moreover, the two bridge arms of the inverter switch circuit 131 share the third DC- terminal 13b, which can further reduce the size of the second substrate 2b, thereby reducing the size of the switch integrated module.

[0083] Specifically, the fifth bridge arm and the sixth bridge arm are connected to the DC bus through the third DC+ terminal 13a and the third DC- terminal 13b. In this way, the power generated by the power generation device can be transmitted to the external power grid, and the power of the external power grid can also be transmitted to the energy storage device through the DC bus.

[0084] In one embodiment of the present disclosure, the active filter switching circuit 132 includes one upper half bridge and one lower half bridge, one upper half bridge is fixed to the eleventh conductive sheet 22k, and one lower half bridge is fixed to the fifteenth conductive sheet 22o on the second substrate 2b.

[0085] The active filter switching circuit 132 includes the seventh bridge arm, the upper half bridge of the seventh bridge arm, the upper half bridge of the fifth bridge arm and the sixth bridge arm in the inverter switching circuit 131, and the third DC+ terminal 13a are all arranged on the eleventh conductive sheet 22k. In this way, the structure on the second substrate 2b can be made more compact, and the space on the second substrate 2b can be further optimized to reduce the size of the second substrate 2b. Moreover, the active filter switching circuit 132 is next to the inverter switching circuit 131, which is more likely to absorb the double-frequency ripple in the inverter switching circuit 131, thereby improving the filtering effect.

[0086] Specifically, the upper half bridge of the seventh bridge arm includes the tenth IGBT 132a and the tenth diode 132b in anti-parallel connection, and the lower half bridge of the seventh bridge arm includes the eleventh IGBT 132c and the thirteenth diode 132d in anti-parallel connection.

[0087] In one embodiment of the present disclosure, the eleventh conductive sheet 22k has a third portion and a fourth portion connected thereto, the third portion and the fourth portion are arranged along a second direction, the upper half bridges of the fifth bridge arm and the sixth bridge arm are both located on the third portion, and the upper half bridge of the seventh bridge arm is located on the fourth portion. The fourth portion is arranged in a spaced manner along a first direction with the fifteenth conductive sheet 22o, and the eleventh conductive sheet 22k, the twelfth conductive sheet 22l, the thirteenth conductive sheet 22m and the fourteenth conductive sheet 22n are arranged in a spaced manner along the second direction. The first direction is the length direction of the plurality of substrates 2, and the second direction is the width direction of the plurality of substrates 2.

[0088] In this way, the layout of each conductive sheet 22 on the second substrate 2b is optimized to facilitate the wiring on the second substrate 2b.

[0089] In some embodiments, the grid-connected switching circuit 13 further includes a fourth DC- terminal 13c, the fourth DC- terminal 13c is located on the twenty-ninth conductive sheet 220c, and is connected to the lower half bridge of the seventh bridge arm and the DC bus respectively. The twenty-ninth conductive sheet 220c is located on the side of the fifteenth conductive sheet 22o away from the fourth portion, and the fourth DC- terminal 13c is located close to the edge of the second substrate 2b.

[0090] In some embodiments, the inverter switch circuit 131 further comprises a ninth bridge arm and a tenth bridge arm, the ninth bridge arm comprising a twelfth IGBT 131i and a fourteenth diode 131j in anti-parallel, the tenth bridge arm comprising a thirteenth IGBT 131k and a fifteenth diode 131l in anti-parallel, the twelfth IGBT 131i and the fourteenth diode 131j being fixed on the twelfth conductive sheet 22l, the thirteenth IGBT 131k and the fifteenth diode 131l being fixed on the thirteenth conductive sheet 22m. The inverter switch circuit 131 further comprises an intermediate output terminal 131m, the intermediate output terminal 131m being located on the twentieth conductive sheet 22t, at least part of the twentieth conductive sheet 22t being located between part of the twelfth conductive sheet 22l and part of the thirteenth conductive sheet 22m. In this way, the layout of the inverter switch circuit 131 can be optimized to reduce the parasitic inductance in the inverter switch circuit, improving the switching performance of the module.

[0091] In some embodiments, as shown in FIG. 2, the second substrate 2b comprises a third region 25 and a fourth region 26, the third region 25 and the fourth region 26 being arranged along the width direction of the second substrate 2b, the inverter switch circuit 131 being located in the third region 25, and the active filter switch circuit 132 being located in the fourth region 26. Figure 1

[0092] Based on the same concept, the disclosure also provides an energy storage converter comprising the above-mentioned switch integrated module. The energy storage converter can be used in a light storage and charging integrated system.

[0093] In this way, the energy storage converter comprises the above-mentioned switch integrated module, which can greatly improve the convenience of mounting electronic components inside the energy storage converter, and can also reduce the size of the energy storage converter, thereby reducing the space it needs to occupy. In addition, since the switch integrated module described above fixes the switch circuits 1 of multiple functional units on at least two substrates 2, the size of a single substrate 2 is reduced, and the structural strength of a single substrate 2 is enhanced, thereby reducing the risk of breakage during processing and improving the yield of the substrate 2, thereby reducing the cost of producing the switch integrated module, and further reducing the cost of the substrate 2.

[0094] Further, the energy storage converter further comprises some other electronic components such as capacitors, which can be connected to the various terminals on the switch integrated module through wires or other means, so as to control the on-off of each electronic component through the switch integrated module, in order to control the working mode of the energy storage converter.

[0095] ​It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments in accordance with the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or groups thereof.

[0096] The relative arrangement of components and steps, numerical expressions, and numerical values set forth in the examples are not intended to limit the scope of the present application unless otherwise specifically stated. It is to be understood that the drawings are not necessarily to scale of the actual proportions used in the fabrication, assembly, and operation of the example embodiments. Techniques, methods, and apparatus known to those of ordinary skill can not be discussed in detail herein. However, the techniques, methods, and apparatus are to be considered as part of the description of the application, where appropriate. In all examples shown and discussed herein, any particular value is to be interpreted as merely an example, and not a limitation. Thus, other examples of the example embodiments can have different values. It is to be noted that like reference numerals and letters refer to like items in the drawings, and once an item is defined in one drawing, it need not be discussed further in subsequent drawings.

[0097] In the description of the present application, it is to be understood that the orientation or positional relationships indicated by orientation words such as "front, back, upper, lower, left, right", "horizontal, vertical, perpendicular, horizontal" and "top, bottom" are generally based on the orientation or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description. Without the opposite indication, these orientation words do not indicate and imply that the indicated device or element must have a particular orientation or be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the scope of protection of the present application. The orientation words "inner, outer" refer to the inner and outer relative to the contour of the components themselves.

[0098] For purposes of the description hereinafter, the terms "upper", "lower", "right", "left", "rear", "front", "vertical" and "horizontal" as can be perceived herein relative to the accompanying drawings refer to the orientation of the components being described. However, it is to be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device described herein relative to the other device or structure is inverted, then a spatially relative term such as "above" can be interpreted as meaning "below" or "below" can be interpreted as meaning "above". The device can also be oriented in other ways (rotated at 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. The terms "first", "second", etc. as can be used herein do not have any specific meaning and are used only to distinguish one component from another.

[0099] In addition, it should be pointed out that the use of the terms "first", "second" and the like to define parts only facilitates the distinction of the corresponding parts, and the above terms have no special meaning unless otherwise stated, and therefore cannot be understood as limiting the scope of protection of the present application.

[0100] The preferred embodiments of the present application have been described above with the purpose of enabling not to limit the scope of protection of the present application, but of enabling a person skilled in the art to make various modifications and changes to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A switch integrated module of an energy storage converter, characterized in that, The switch integrated module comprises a plurality of functional unit switching circuits (1) and a plurality of substrates (2); The plurality of functional unit switching circuits (1) comprise a power generation switching circuit (11), a charging switching circuit (12) and a grid-connected switching circuit (13), the power generation switching circuit (11) is used to connect a power generation device and a DC bus, the charging switching circuit (12) is used to connect the DC bus and an energy storage device, and the grid-connected switching circuit (13) is used to connect the DC bus and an external power grid, and the plurality of functional unit switching circuits (1) are fixed on the plurality of substrates (2).

2. The switch integrated module according to claim 1, wherein The power generation switching circuit (11) is located on a first substrate (2a) of the plurality of substrates (2), and comprises two bridge arms, each of the two bridge arms comprises a boost circuit and a bypass circuit connected in parallel with each other, the boost circuit comprises a first IGBT (11a), a first diode (11b) and a second diode (11c), the first IGBT (11a) and the first diode (11b) are connected in antiparallel, the second diode (11c) and the first IGBT (11a) are connected in series with the first diode (11b) after being connected in antiparallel, and the bypass circuit comprises a third diode (11d); wherein The third diode (11d) and the second diode (11c) in the two bridge arms are fixed on a first conductive sheet (22a) of the first substrate (2a), the first IGBT (11a) and the first diode (11b) of one of the two bridge arms are fixed on a second conductive sheet (22b) of the first substrate (2a), and the first IGBT (11a) and the first diode (11b) of the other are fixed on a third conductive sheet (22c) of the first substrate (2a).

3. The switch integrated module according to claim 2, wherein The power generation switching circuit (11) comprises a first DC+ terminal (11i) and a first DC- terminal (11j), the first DC+ terminal (11i) is fixed on the first conductive sheet (22a) and used to be connected with the DC bus, and the first DC- terminal (11j) is fixed on a sixth conductive sheet (22f) of the first substrate (2a) and used to connect the DC bus and the two bridge arms.

4. The switch integrated module according to claim 3, wherein The power generation switch circuit (11) comprises a first input terminal (11e), a second input terminal (11f), a third input terminal (11g) and a fourth input terminal (11h), the first input terminal (11e) is fixed to the second conductive sheet (22b), the second input terminal (11f) is fixed to the third conductive sheet (22c), the third input terminal (11g) is fixed to the fourth conductive sheet (22d) of the first substrate (2a) and is used for being connected with the gate of the first IGBT (11a) on one of the two bridge arms, and the fourth input terminal (11h) is fixed to the fifth conductive sheet (22e) of the first substrate (2a) and is used for being connected with the gate of the first IGBT (11a) on the other of the two bridge arms; wherein, The second conductive sheet (22b), the fourth conductive sheet (22d), the third conductive sheet (22c) and the fifth conductive sheet (22e) are arranged at intervals along a first direction and are located between the first conductive sheet (22a) and the sixth conductive sheet (22f) in a second direction, the first direction is the length direction of the plurality of substrates (2), and the second direction is the width direction of the plurality of substrates (2).

5. The switch integrated module according to claim 1, wherein, The charging switch circuit (12) is located in the first substrate (2a) of the plurality of substrates (2) and comprises two bridge arms connected in parallel with each other, a second DC+ terminal (12a) and a second DC- terminal (12b); The two bridge arms each comprise an upper half bridge and a lower half bridge, the upper half bridge of the two bridge arms is fixed to the seventh conductive sheet (22g) of the first substrate (2a), and the lower half bridge of one of the two bridge arms is fixed to the eighth conductive sheet (22h) of the first substrate (2a), and the lower half bridge of the other of the two bridge arms is fixed to the ninth conductive sheet (22i) of the first substrate (2a); The second DC+ terminal (12a) is fixed to the seventh conductive sheet (22g), and the second DC- terminal is fixed to the tenth conductive sheet (22j) of the first substrate (2a) and is used for connecting a DC bus with the lower half bridge of the two bridge arms.

6. The switch integrated module according to claim 1, wherein, The charging switch circuit (12) comprises two bridge arms connected in parallel with each other; The upper half bridge of one of the two bridge arms comprises at least two first switch assemblies connected in parallel, and the lower half bridge comprises at least two second switch assemblies connected in parallel, the first switch assembly comprises a second IGBT (12c) and a fourth diode (12d) connected in anti-parallel, and the second switch assembly comprises a third IGBT (12e) and a fifth diode (12f) connected in anti-parallel. The upper half bridge of the other one of the two bridge arms comprises at least two third switch assemblies connected in parallel, and the lower half bridge comprises at least two fourth switch assemblies connected in parallel, the third switch assembly comprises a fourth IGBT (12g) and a sixth diode (12h) connected in anti-parallel, and the fourth switch assembly comprises a fifth IGBT (12i) and a seventh diode (12j) connected in anti-parallel.

7. The switching integrated module according to claim 5, wherein, The eighth conductive sheet (22h) has a first portion and a second portion connected to each other, the first portion and the second portion are arranged along a second direction and form an avoiding gap, the seventh conductive sheet (22g) is located on the side of the first portion away from the second portion, the ninth conductive sheet (22i) and the tenth conductive sheet (22j) are located in the avoiding gap, the ninth conductive sheet (22i), the tenth conductive sheet (22j) and the second portion are arranged at intervals along a first direction, the first direction is the length direction of the plurality of substrates (2), and the second direction is the width direction of the plurality of substrates (2).

8. The switching integrated module according to claim 1, wherein, The grid-connected switching circuit (13) is located in the second substrate (2b) of the plurality of substrates (2), and comprises an inverter switching circuit (131) and an active filter switching circuit (132) connected in parallel with each other, the inverter switching circuit (131) comprises two bridge arms, each of the two bridge arms comprises an upper half bridge and a lower half bridge, the upper half bridges of the two bridge arms are fixed to an eleventh conductive sheet (22k) on the second substrate (2b), and the lower half bridge of one of the two bridge arms is fixed to a twelfth conductive sheet (22l) on the second substrate (2b), and the lower half bridge of the other one of the two bridge arms is fixed to a thirteenth conductive sheet (22m) on the second substrate (2b).

9. The switching integrated module according to claim 8, wherein, The grid-connected switching circuit (13) comprises a third DC+ terminal (13a) and a third DC- terminal (13b), the third DC+ terminal (13a) is fixed to the eleventh conductive sheet (22k) and is used to be connected with the DC bus, and the third DC- terminal is fixed to a fourteenth conductive sheet (22n) and is used to be connected with the lower half bridges of the two bridge arms of the inverter switching circuit (131).

10. The switching integrated module according to claim 9, wherein, The active filter switching circuit (132) comprises an upper half bridge and a lower half bridge, the upper half bridge is fixed to the eleventh conductive sheet (22k), and the lower half bridge is fixed to a fifteenth conductive sheet (22o) on the second substrate (2b).

11. The switching integrated module according to claim 10, wherein, The eleventh conductive sheet (22k) has a third portion and a fourth portion connected thereto, the third portion and the fourth portion are arranged along a second direction, the upper half bridges of the two bridge arms are located at the third portion, one upper half bridge is located at the fourth portion, the fourth portion is spaced apart from the fifteenth conductive sheet (22o) along a first direction, the eleventh conductive sheet (22k), the twelfth conductive sheet (22l), the thirteenth conductive sheet (22m) and the fourteenth conductive sheet (22n) are spaced apart along the second direction, the first direction is the length direction of the plurality of substrates (2), and the second direction is the width direction of the plurality of substrates (2).

12. An energy storage converter, comprising the switch integrated module of any one of claims 1-11. ​

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