Electricity-resistant thin-film resistor structure

Abstract

The utility model provides an electrical resistance thin-film resistor structure, which comprises a substrate, an alloy interface layer, a resistance layer, a conductor layer, a protection layer and an electroplating layer, and can improve the electrical resistance, the heat dissipation capability and the binding force of a resistor.

Description

TECHNICAL FIELD

[0001] The utility model relates to a thin film resistance structure with electric resistance, in particular to a thin film resistance element with electric resistance and heat dissipation characteristics. BACKGROUND

[0002] A surge is a sudden appearance of high voltage or large current phenomenon in a circuit. When a resistor encounters a surge, a large amount of current will pass through, causing instantaneous power to increase, which in turn causes the resistor to heat up, affecting stability and even damaging the resistance chip.

[0003] The impact of heat on resistance includes performance degradation, physical damage, and reduced reliability. Continuous or frequent high temperatures can cause the performance of the resistor material to degrade, and the resistance value may drift, affecting the stability and accuracy of the circuit. In extreme cases, excessively high temperatures can cause the resistor to burn out or crack, and even cause circuit failure. In addition, frequent heating and cooling cycles can accelerate the aging process of the resistor, thereby reducing its long-term reliability. SUMMARY

[0004] Electric resistance (also known as surge resistance) refers to the maximum voltage that a resistor can withstand without breakdown or damage. In order to improve the surge resistance of the thin film resistor, the utility model develops a novel technical solution for protection coating, film material, structure, circuit protection, and manufacturing method, to overcome the shortcomings and shortcomings of the prior art.

[0005] The utility model further provides a thin film resistance structure with electric resistance, comprising:

[0006] a substrate;

[0007] an alloy interface layer disposed on or partially covering a first surface of the substrate; wherein the alloy interface layer has a plurality of first continuous strip structures;

[0008] a resistance layer partially covering the alloy interface layer; wherein the resistance layer has a plurality of second continuous strip structures, and the plurality of first continuous strip structures are aligned with the plurality of second continuous strip structures;

[0009] a conductor composite structure disposed at both ends of the substrate, connected to the resistance layer and the alloy interface layer to form two electrodes;

[0010] a protective layer disposed on the resistance layer and exposing the two electrodes; and

[0011] an electroplated layer disposed on the side edges of the substrate, covering both sides of the substrate.

[0012] Preferably, the distance between the plurality of first continuous strip structures is greater than the thickness of the plurality of strip structures.

[0013] Preferably, the conductor composite structure comprises an upper conductor layer, a lower conductor layer, and a side conductor layer, and the upper conductor layer, the lower conductor layer, the resistance layer, and the alloy interface layer abut the same surface of the side conductor layer.

[0014] Preferably, the upper conductor layer and the lower conductor layer are thick film conductors, and the thickness of the upper conductor layer and the lower conductor layer is 3 to 60 μm.

[0015] Preferably, the resistance layer is a thin film alloy, and the thickness of the resistance layer is 20 to 100 nm. 5 BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 Figure 2 Figure 3 is a sectional view of a manufacturing step of the first embodiment of the present application.

[0017] Figure 4 is a sectional view of the first embodiment of the present application.

[0018] Figure 5 is a sectional view of the second embodiment of the present application.

[0019] Figure 6 is a sectional view of the third embodiment of the present application.

[0020] Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 is a plan view of each step of the manufacturing method of the first embodiment of the present application.

[0021] Figure 14 is an enlarged sectional view of the alloy interface layer of the present application.

[0022] Figure 15 is a flowchart of the manufacturing method of the first embodiment of the present application.

[0023] SYMBOL EXPLANATION

[0024] 1 to 3: electrically resistant thin film resistor structure

[0025] 10: substrate

[0026] 20: alloy interface layer

[0027] 21: first continuous strip-like structure

[0028] 30: resistance layer

[0029] ​​​​​​​​​31: second continuous strip structure

[0030] 40: conductor composite structure

[0031] 41: upper conductor layer

[0032] 42: lower conductor layer

[0033] 43: side conductor layer

[0034] 50: protective layer

[0035] 60: plating layer

[0036] 70: blocking cut line

[0037] DR1: first direction

[0038] DR2: second direction

[0039] S01-S10: steps

[0040] X-X', Y-Y': resistance cut line DETAILED DESCRIPTION

[0041] The following embodiments are described with reference to the accompanying drawings, which illustrate the principles of the present application, and enable a person skilled in the art to clearly understand the technical features of the present application, but are not intended to limit the scope of the present application, which should be defined by the claims. It is particularly emphasized that the drawings are only for illustration and do not represent the actual size or quantity of the components, and some details may not be completely drawn in order to simplify the drawings.

[0042] For the sake of simplicity, the resistor is taken as an example, but it should be understood that it is used for illustration and not for limitation of the present application, and the high-temperature-resistant resistor element of the present application can be implemented in any shape.

[0043] Please refer to Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 7 , Figure 8 , Figure 9 , Figure 10 , Figure 11 , Figure 12 , Figure 13 , Figure 14 , Figure 15 , Figure 1 , Figure 2 , Figure 3 is a cross-sectional view of the preparation steps of the first embodiment of the present application, Figure 4 is a cross-sectional view of the first embodiment of the present application, Figure 7 , Figure 8 ,Figure 9 、 Figure 10 、 Figure 11 、 Figure 12 、 Figure 13 is a preparation step of the first embodiment of the utility model, and Figure 14 is a sectional view of a strip structure of the utility model, Figure 15 is a flow chart of the manufacturing method of the first embodiment of the utility model.

[0044] The utility model discloses a thin film resistance structure 1 of electric resistance includes a substrate 10, an alloy interface layer 20, a resistance layer 30, a conductor composite structure 40, an upper conductor layer 41, a lower conductor layer 42, a side conductor layer 43 and a protective layer 50.

[0045] The manufacturing method of the thin film resistance structure 1 of electric resistance of the utility model is as follows:

[0046] Step S01, set up substrate 10, and the material of substrate can be aluminum oxide or aluminum nitride etc.

[0047] Step S02, as shown in Figure 7 , sputter alloy interface layer 20 on substrate 10. As shown in Figure 1 And Figure 7 , form alloy interface layer 20 on substrate 10 by sputtering, and alloy interface layer 20 has a plurality of first continuous strip structure 21, and first continuous strip structure 21 is parallel to each other and across at least one short side of electric resistance thin film resistance 1, Figure 7 、 Figure 8 、 Figure 9 、 Figure 10 、 Figure 11 、 Figure 12 、 Figure 13 Take four electric resistance thin film resistances as an example, but the utility model is not limited to this. The interval distance between each first continuous strip structure 21 is greater than the thickness of first continuous strip structure 21. The cross section of the short side of first continuous strip structure can be circular, semicircular, quadrilateral, polygonal and the like, but is not limited to this.

[0048] The material of alloy interface layer 20 can be titanium, copper, aluminum, nickel, gold, carbon, silicon and alloy thereof, and the thickness of alloy interface layer 20 can be 1-10 4 nm. As shown in Figure 14 , alloy interface layer 20 can have a plurality of microparticles 21, increase the contact surface area between alloy interface layer 20 and resistance layer 30, and form an interface staggered with each other.

[0049] Step S03, as shown in Figure 8As shown, the sputtered resistor layer 30 is on the alloy interface layer 20. The resistor layer 30 has a plurality of second continuous strip structures 31, which are parallel to each other and span the short side of at least one dielectric thin film resistor 1. The spacing between each second continuous strip structure 31 is greater than the thickness of the second continuous strip structure 31. The cross-section of the short side of the second continuous strip structure 31 can be circular, semi-circular, quadrilateral, polygonal, etc., but is not limited thereto.

[0050] The resistive layer 30 can be made of titanium, copper, aluminum, nickel, gold, carbon, silicon, or their alloys. The resistive layer 30 is a thin-film alloy, and its thickness is 20–10 mm. 5 nm.

[0051] Step S04, as follows Figure 2 and Figure 9 As shown, conductor layers 41 are printed on both ends of the resistor layer 30, and lower conductor layers 42 are printed on both ends of the second surface of the substrate 10, and then sintered. The upper conductor layer 41 is positioned relative to or aligned with the lower conductor layer 42. The upper conductor layer 41 and conductor layer 42 are connected in pairs along the first direction DR1 and are not connected along the second direction DR2, that is, the upper conductor layer 41 or the lower conductor layer 42 has a gap between the resistor cutting lines X-X'.

[0052] The upper conductor layer 41 and the lower conductor layer 42 are thick-film conductors, with a thickness of 3–60 μm. The thickness ratio of the resistive layer to the upper and lower conductor layers is 2–10. 5 3×10 3 ~6×10 4 It can increase heat dissipation capacity, electrical resistance and strengthen the bonding between different parts.

[0053] For step S05, please refer to [link / reference]. Figure 10 According to the required resistance value, the resistance layer 30 is laser-repaired to form a repair cutting line 70 to achieve the target resistance value.

[0054] Step S06, please refer to Figure 3 and Figure 11 A protective layer 50 is printed on the resistive layer 30 and the upper conductor layer 41, covering the entire resistive layer 30 and partially covering the upper conductor layer 41. This protective layer 50 effectively prevents moisture or sulfur gas from penetrating and provides a large area for heat dissipation, reducing thermal effects and maintaining good performance. The material of the protective layer 50 can be phenolic, epoxy, or acrylic resin.

[0055] For step S07, please refer to... Figure 12, the substrate 10 is folded along a first direction DR1, which is the short side direction of the substrate 10 (i.e. the Y-Y' resistance cutting line direction), and a second direction DR2 orthogonal to the first direction DR1 is the long side direction of the substrate 10 (i.e. the X-X' resistance cutting line direction), so that the substrate 10 is folded along the first direction DR1 to a length of a single resistance size.

[0056] Step S08, please refer to Figure 3 and Figure 11 The alloy junction layer 20, the resistance layer 30, the upper conductor layer 41 and the lower conductor layer 42 are provided with a side conductor layer 43 at both ends by side dipping or sputtering, so that the upper conductor layer 41 and the lower conductor layer 42 abut the same surface of the side conductor layer 43 to form a C-shaped conductor composite structure 40. The material of the conductor composite structure 40 is a printed conductor ink, and the composition of the ink can be composed of nickel, copper, lanthanum, silver, palladium or a combination thereof.

[0057] Step S09, please refer to Figure 4 and Figure 12 The substrate 10 is folded along the second direction DR2 to further reduce the size to the width of a single resistance.

[0058] Step S10, a plating layer 60 is formed at both ends of the protective layer 50 and the conductor composite structure 40, the plating layer 60 covers the conductor composite structure 40 and part of the resistance layer 30, and the plating layer 60 is a composite structure with three layers from inside to outside, and the materials from inside to outside are copper, nickel and tin. The plating layer 60 provides a large area of heat dissipation function, reduces the thermal effect and maintains good performance.

[0059] Please refer to steps S03 and S09, wherein the conductor composite structure 40 is manufactured in multiple times to simplify the process. If the side conductor layer 43 is printed after the protective layer 50 is printed, the protective layer 50 can be printed in a large area, and the process time and procedure are shortened.

[0060] Please refer to Figure 14 The alloy junction layer 20 and the resistance layer 30 are formed on the substrate 10 by using a sputtering technique in combination with a metal photomask with multiple strip patterns in the same pass to form a multiple continuous strip structure design of the alloy junction layer 20 and the resistance layer 30. The alloy junction layer 20 has microparticles 21 for strengthening the bonding force of the resistance layer 30, and the size of the microparticles 21 is 0.1-100 nanometers, so that the stability of the resistance when subjected to a large voltage or current in an instant is improved. Without affecting other performance, the heat dissipation capacity, the electrical resistance and the bonding degree between different parts are enhanced.

[0061] Please refer to Figure 5 , which is the second embodiment of the electrically resistant thin film resistance structure 2 of the utility model. Compared with Figure 4The difference between the first embodiment and the second embodiment is that the upper conductor layer 41 is directly disposed on the first surface of the substrate 10, the alloy interface layer 20 and the resistance layer 30 are disposed on the second surface of the substrate 10, the lower conductor layer 42 is disposed on the resistance layer 30, and the protective layer 50 is disposed on the first surface of the substrate 10 and the resistance layer 30.

[0062] Referring to Figure 6 The difference between the first embodiment and the second embodiment is that the upper conductor layer 41 is directly disposed on the first surface of the substrate 10, the alloy interface layer 20 and the resistance layer 30 are disposed on the second surface of the substrate 10, the lower conductor layer 42 is disposed on the resistance layer 30, and the protective layer 50 is disposed on the first surface of the substrate 10 and the resistance layer 30. Figure 4 The difference between the first embodiment and the second embodiment is that the upper conductor layer 41 is directly disposed on the first surface of the substrate 10, the alloy interface layer 20 and the resistance layer 30 are disposed on the second surface of the substrate 10, the lower conductor layer 42 is disposed on the resistance layer 30, and the protective layer 50 is disposed on the first surface of the substrate 10 and the resistance layer 30.

[0063] The upper conductor layer and the lower conductor layer of the utility model are thick film conductors, and the resistance layer is a thin film alloy, which provides large-area heat dissipation function, reduces thermal effect, and maintains good performance. The alloy interface layer has microparticles that strengthen the bonding force with the resistance layer, so it is beneficial to improve the stability of the resistance when it is subjected to a large voltage or current in an instant. Without affecting other performance, the heat dissipation capacity, the electric resistance capacity, and the bonding degree between different parts are enhanced. In addition, the alloy interface layer and the resistance layer of the utility model form a first continuous strip structure and a second continuous strip structure, respectively, which spans multiple units of electric resistance thin film resistors, saves multiple processes, and is beneficial to improve the production quantity, product consistency, and yield.

Claims

1. An electrically resistant thin film resistor structure, characterized by, It comprises: a substrate; an alloy junction layer disposed on a first surface of the substrate; wherein the alloy junction layer has a plurality of first continuous strip structures; a resistance layer partially covering the alloy junction layer; wherein the resistance layer has a plurality of second continuous strip structures, the plurality of first continuous strip structures and the plurality of second continuous strip structures are aligned; a conductor composite structure disposed at both ends of the substrate, connected with the resistance layer and the alloy junction layer to form two electrodes; a protective layer disposed on the resistance layer, and exposing the two electrodes; and an electroplated layer disposed on the side of the substrate, covering both sides of the substrate.

2. The thin film resistive structure of claim 1, wherein, The spacing distance between the plurality of first continuous strip structures is greater than the thickness of the plurality of strip structures.

3. The thin film resistive structure of claim 1, wherein the thin film resistive structure is electrically isolated from the substrate by a dielectric layer. The conductor composite structure comprises: an upper conductor layer, a lower conductor layer and a side conductor layer, and the upper conductor layer, the lower conductor layer, the resistance layer and the alloy junction layer abut the same surface of the side conductor layer.

4. The electrically resistant thin-film resistor structure as described in claim 3, characterized in that, The upper conductor layer and the lower conductor layer are thick film conductors, and the thickness of the upper conductor layer and the lower conductor layer is 3-60 μm.

5. The electrically resistant thin-film resistor structure as described in claim 3, characterized in that, The resistance layer is a thin film alloy, and the thickness of the resistance layer is 20-10 5 nm.

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