Wide-wavelength electro-absorption modulated laser chip

Abstract

The utility model relates to the technical field of laser chips, in particular to a wide-wavelength electro-absorption modulated laser chip and a preparation method and application thereof. The utility model provides a wide-wavelength electro-absorption modulated laser chip, which comprises a substrate, a first modulator layer, a first front grating layer, a first gain layer, a first phase layer, a rear grating layer, a second phase layer, a second gain layer, a second front grating layer, a second modulator layer, a sampling grating, a cladding, an electric contact layer, an electric isolation trench, a P-surface electrode and an N-surface electrode. And the sampling grating is arranged in the first front grating layer, the rear grating layer and the second front grating layer. A cladding layer and an electric contact layer are sequentially stacked above all the functional layers, electric isolation trenches are arranged among the functional layers, a P-surface electrode is arranged above the electric contact layer, and an N-surface electrode is arranged below the substrate. According to the chip, the same post-sampling grating reflection region is utilized, so that the effects of double-end light emitting and rate and wavelength tuning performance doubling of the same integrated chip are realized, and the power consumption of the integrated chip is greatly reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to laser chip technical field, concretely relates to a wide wavelength electroabsorption modulation laser chip. BACKGROUND

[0002] With the rapid development of optical communication, people's bandwidth requirement of optical transmitting chip is higher and higher, and the bandwidth limit of optical transmitting chip is constantly broken through, but limited by physical limit, the difficulty of bandwidth breakthrough is bigger and bigger, in order to improve the bandwidth of optical transmitting chip, on the one hand, the scheme of multiple wavelengths is used, and on the other hand, the bandwidth is improved by modulation format, and the modulation format of optical transmitting chip is gradually developed from intensity modulation to coherent modulation, and in particular in recent years, coherent modulation is used more and more in backbone network and data center, and the application of coherent modulation in the field of silicon light is more and more extensive.

[0003] In order to cope with the technical requirement of coherent and multiple wavelength optical emission, it is urgent to provide a wide wavelength electroabsorption modulation laser chip. UTILITY MODEL CONTENT

[0004] The utility model discloses a purpose at: propose a wide wavelength electroabsorption modulation laser chip, the chip utilizes the same back sampling grating reflection area, realizes the same integrated chip double-end light emission, and the rate and wavelength tuning performance double effect is greatly reduced the power consumption of integrated chip, provides the solution scheme of optical emission for coherent communication.

[0005] Therefore, the utility model provides the following technical scheme,

[0006] Firstly, the utility model provides a wide wavelength electroabsorption modulation laser chip in optional implementation, including substrate, first modulator layer, first front grating layer, first gain layer, first phase layer, back grating layer, second phase layer, second gain layer, second front grating layer, second modulator layer, sampling grating, cladding, electric contact layer, electric isolation groove, P face electrode and N face electrode;

[0007] The substrate is provided with first modulator area, first front grating area, first gain area, first phase area, back grating area, second phase area, second gain area, second front grating area and second modulator area, and the first phase area and the second phase area are respectively arranged on the two sides of the back grating area, the first gain area and the second gain area are respectively arranged on the side of the first phase area and the second phase area away from the back grating area, the first front grating area and the second front grating area are respectively arranged on the side of the first gain area and the second gain area away from the back grating area, and the first modulator area and the second modulator area are respectively arranged on the side of the first front grating area and the second front grating area away from the back grating area;

[0008] The first modulator layer, the first front grating layer, the first gain layer, the first phase layer, the rear grating layer, the second phase layer, the second gain layer, the second front grating layer and the second modulator layer are arranged on the first modulator area, the first front grating area, the first gain area, the first phase area, the rear grating area, the second phase area, the second gain area, the second front grating area and the second modulator area arranged on the substrate respectively;

[0009] The first modulator layer, the first gain layer, the second gain layer and the second modulator layer sequentially comprise a lower limiting layer, a multi-quantum well layer and an upper limiting layer from bottom to top;

[0010] The sampling grating is arranged in the first front grating layer, the rear grating layer and the second front grating layer;

[0011] The cladding layer and the electrical contact layer are sequentially arranged above each functional layer from bottom to top;

[0012] The electrical isolation groove is arranged between each functional layer;

[0013] The P-face electrode is arranged above each functional layer;

[0014] The N-face electrode is arranged below the substrate.

[0015] Preferably, the first front grating layer, the first phase layer, the rear grating layer, the second phase layer and the second front grating layer use passive materials with a fluorescent wavelength smaller than the light-emitting wavelength of the laser chip by 90-200nm. The first modulator layer, the first gain layer, the second gain layer and the second modulator layer use the same active material. The cladding layer and the electrical contact layer are further provided with an inverted mesa ridge waveguide structure.

[0016] In the utility model, it is necessary to strictly limit the first front grating layer, the first phase layer, the rear grating layer, the second phase layer and the second front grating layer to use passive materials with a fluorescent wavelength smaller than the light-emitting wavelength of the laser chip by 90-200nm, because if the fluorescent wavelength of the material of the grating area and the phase area is close to the light-emitting wavelength of the laser, the light transmission in the passive area is absorbed by the passive area material, and the oscillation enhancement effect of the light in the resonant cavity cannot be formed, so the fluorescent wavelength of the passive material is longer than the light-emitting wavelength of the laser. In addition, the inverted mesa ridge waveguide mechanism is the shape of the waveguide, which is wide on the top and narrow on the bottom, determined by the crystal structure of the cladding InP material, and the inverted mesa structure is naturally formed by etching with hydrochloric acid etching solution. The so-called shallow ridge waveguide is to illustrate that the ridge waveguide does not etch the quantum well layer.

[0017] Preferably, the wavelength tuning range of the wide wavelength EA modulated laser chip is greater than 40nm, and can be continuously tuned. The fluorescence wavelength of the active material of the multiple quantum well layer in the first modulator layer, the first gain layer, the second gain layer and the second modulator layer is greater than the fluorescence wavelength of the active material of the lower confinement layer and the upper confinement layer. The material of the cladding layer is InP, preferably, the material has P-type doped Zn. The material of the electrical contact layer is InGaAs, preferably, the material has P-type doped Zn. The lower confinement layer, the multiple quantum well layer and the upper confinement layer adopt phosphorus-containing active material.

[0018] Compared with the prior art, the utility model has following beneficial effect one:

[0019] The chip provided by the utility model utilizes the same rear sampling grating reflection area, realizes the same integrated chip double-end light emission, doubles the rate and wavelength tuning performance, and greatly reduces the power consumption of the integrated chip. BRIEF DESCRIPTION OF DRAWINGS

[0020] The advantages of the above and / or additional aspects of the present application will become apparent and easily understood in connection with the following description of embodiments, taken in conjunction with the following drawings, in which:

[0021] Figure 1 is the structure side view of the wide wavelength EA modulated laser chip in the utility model embodiment 1;

[0022] Figure 2 is the structure section view of the wide wavelength EA modulated laser chip in the utility model embodiment 1.

[0023] 1-first modulator area;2-first front grating area;3-first gain area;4-first phase area;5-rear grating area;6-second phase area;7-second gain area;8-second front grating area;9-second modulator area;11-substrate;12-lower confinement layer;13-multiple quantum well layer;14-upper confinement layer;17-sampling grating;19-cladding layer;20-electrical contact layer;21-electrical isolation groove;22-P face electrode;23-N face electrode. DETAILED DESCRIPTION

[0024] In order to more clearly understand the above purpose, features and advantages of the present application, the present application is further described in detail below in combination with the drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0025] In the following description, many specific details are set forth in order to provide a thorough understanding of the present application, however, the present application can also be implemented in other ways different from those described herein, therefore, the protection scope of the present application is not limited by the specific embodiments disclosed below.

[0026] The technical scheme of the utility model will be described below in detail in combination with the embodiments and drawings.

[0027] Embodiment 1

[0028] Referring to Figure 1 and Figure 2 The embodiment provides a wide-wavelength electric absorption modulation laser chip, which comprises a substrate 11, a first modulator layer, a first front grating layer, a first gain layer, a first phase layer, a rear grating layer, a second phase layer, a second gain layer, a second front grating layer, a second modulator layer, a sampling grating 17, a cladding layer 19, an electrical contact layer 20, an electrical isolation groove 21, a P-face electrode 22 and an N-face electrode 23.

[0029] The substrate is provided with a first modulator region 1, a first front grating region 2, a first gain region 3, a first phase region 4, a rear grating region 5, a second phase region 6, a second gain region 7, a second front grating region 8 and a second modulator region 9, the first phase region 4 and the second phase region 6 are respectively arranged on the two sides of the rear grating region 5, the first gain region 3 and the second gain region 7 are respectively arranged on the side, away from the rear grating region 5, of the first phase region 4 and the second phase region 6, the first front grating region 2 and the second front grating region 8 are respectively arranged on the side, away from the rear grating region 5, of the first gain region 3 and the second gain region 7, and the first modulator region 1 and the second modulator region 9 are respectively arranged on the side, away from the rear grating region 5, of the first front grating region 2 and the second front grating region 8.

[0030] The first modulator layer, the first front grating layer, the first gain layer, the first phase layer, the rear grating layer, the second phase layer, the second gain layer, the second front grating layer and the second modulator layer are respectively arranged on the first modulator region 1, the first front grating region 2, the first gain region 3, the first phase region 4, the rear grating region 5, the second phase region 6, the second gain region 7, the second front grating region 8 and the second modulator region 9 arranged on the substrate, and the first modulator layer, the first gain layer, the second gain layer and the second modulator layer sequentially comprise a lower confining layer 12, a multiple quantum well layer 13 and an upper confining layer 14 from bottom to top.

[0031] The sampling grating 17 is arranged in the first front grating layer, the rear grating layer and the second front grating layer; the cladding layer 19 and the electrical contact layer 20 are sequentially arranged above each functional layer from bottom to top; the electrical isolation groove 21 is arranged between each functional layer; the P-face electrode 22 is arranged above each functional layer; and the N-face electrode 23 is arranged below the substrate 11. The passive material used in the first front grating layer, the first phase layer, the rear grating layer, the second phase layer and the second front grating layer has a fluorescence wavelength smaller than the light-emitting wavelength of the laser chip by 90-200 nm. The active material used in the first modulator layer, the first gain layer, the second gain layer and the second modulator layer is the same, preferably, the lower confinement layer 12, the multiple quantum well layer 13 and the upper confinement layer 14 adopt phosphorus-containing active material, preferably, the active material of the multiple quantum well layer 13 in the first modulator layer, the first gain layer, the second gain layer and the second modulator layer has a fluorescence wavelength larger than that of the active material of the lower confinement layer 12 and the upper confinement layer 14. The material of the cladding layer 19 is InP, preferably, the material contains P-type doped Zn; and the material of the electrical contact layer 20 is InGaAs, preferably, the material contains P-type doped Zn.

[0032] In the utility model, the current applied to the first gain area 3 and the second gain area 7 can produce light, and the produced light oscillates in the resonant cavity formed by the first front grating area 2, the rear grating area 5 and the second front grating area 8, and when the light produced by oscillation is strong enough, laser light is emitted from the end face.

[0033] Application example:

[0034] The chip can be applied to:

[0035] Wide-wavelength electric absorption modulation laser.

[0036] Although the present application is disclosed in detail above, it should be understood that the description is only exemplary and is not intended to limit the application of the present application. The scope of protection of the present application is defined by the appended claims, and can include various modifications, improvements and equivalent schemes made to the utility model without departing from the scope and spirit of the present application.

Claims

1. A wide wavelength electroabsorption modulator laser chip, characterized by, The substrate, the first modulator layer, the first front grating layer, the first gain layer, the first phase layer, the rear grating layer, the second phase layer, the second gain layer, the second front grating layer, the second modulator layer, the sampling grating, the cladding layer, the electrical contact layer, the electrical isolation groove, the P-face electrode and the N-face electrode; The substrate is provided with a first modulator region, a first front grating region, a first gain region, a first phase region, a rear grating region, a second phase region, a second gain region, a second front grating region and a second modulator region, the first phase region and the second phase region are respectively arranged on the two sides of the rear grating region, the first gain region and the second gain region are respectively arranged on the side of the first phase region and the second phase region away from the rear grating region, the first front grating region and the second front grating region are respectively arranged on the side of the first gain region and the second gain region away from the rear grating region, and the first modulator region and the second modulator region are respectively arranged on the side of the first front grating region and the second front grating region away from the rear grating region; The first modulator layer, the first front grating layer, the first gain layer, the first phase layer, the rear grating layer, the second phase layer, the second gain layer, the second front grating layer and the second modulator layer are respectively arranged on the first modulator region, the first front grating region, the first gain region, the first phase region, the rear grating region, the second phase region, the second gain region, the second front grating region and the second modulator region arranged on the substrate; The first modulator layer, the first gain layer, the second gain layer and the second modulator layer sequentially comprise a lower confinement layer, a multiple quantum well layer and an upper confinement layer from bottom to top; The sampling grating is arranged in the first front grating layer, the rear grating layer and the second front grating layer; The cladding layer and the electrical contact layer are sequentially arranged above each functional layer from bottom to top; The electrical isolation groove is arranged between each functional layer; The P-face electrode is arranged above each functional layer; The N-face electrode is arranged below the substrate.

2. The wide wavelength electroabsorption modulated laser chip of claim 1, wherein, The fluorescence wavelength of the passive material used by the first front grating layer, the first phase layer, the rear grating layer, the second phase layer and the second front grating layer is 90-200 nm smaller than the light-emitting wavelength of the laser chip.

3. The broad wavelength electroabsorption modulator laser chip of claim 1, wherein, The active materials used by the first modulator layer, the first gain layer, the second gain layer and the second modulator layer are the same.

4. The broad wavelength electroabsorption modulator laser chip of claim 1, wherein, The cladding layer and the electrical contact layer are further provided with an inverted mesa ridge waveguide structure.

5. The wide wavelength electroabsorption modulated laser chip of claim 1, wherein, The wavelength tuning range of the wide-wavelength electro-absorption modulated laser chip is greater than 40 nm, and the chip can be continuously tuned.

6. The wide wavelength electroabsorption modulated laser chip of claim 3, wherein, The fluorescence wavelength of the active material of the multiple quantum well layer in the first modulator layer, the first gain layer, the second gain layer and the second modulator layer is greater than the fluorescence wavelength of the active material of the lower confinement layer and the upper confinement layer.

7. The broad wavelength electroabsorption modulator laser chip of claim 1, wherein, The material of the cladding layer is InP.

8. The broad wavelength electroabsorption modulator laser chip of claim 1, wherein, The material of the electrical contact layer is InGaAs.

9. The broad wavelength electroabsorption modulator laser chip of claim 1, wherein, The lower confinement layer, the multiple quantum well layer and the upper confinement layer adopt phosphorus-containing active materials.

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