Plasma generator with adjusting function

Abstract

The utility model belongs to the technical field of radio frequency circuit control, and particularly relates to a plasma generator with an adjusting function, which comprises a process cavity, an outer cavity arranged outside the process cavity, a protective cover arranged inside the outer cavity, a wafer placing platform arranged inside the process cavity, and a molecular pump arranged at the bottom of the process cavity. The first coil adapter is arranged at the top of the process cavity; the coil main body is arranged at the bottom of the first coil adapter; a 2MHz coil radio frequency power supply, wherein the 2MHz coil radio frequency power supply is electrically connected with the first coil adapter; one end of the lower electrode 13.56 MHz radio frequency power supply is electrically connected with the lower electrode matcher, and one end of the lower electrode 13.56 MHz radio frequency power supply is electrically connected with the wafer placing platform; the interaction system is electrically connected with the first coil adapter and the lower electrode 13.56 MHz radio frequency power supply; the structure is reasonable, and in the using process, the capacitance change of the load end can be monitored in real time, and the matching of the optimal capacitance can be rapidly set.

Description

TECHNICAL FIELD

[0001] The utility model relates to radio frequency circuit control technical field, concretely is a kind of plasma generator with adjusting function. BACKGROUND

[0002] In radio frequency circuit, radio frequency power supply is as signal source, and through signal amplification, filtering, modulation etc. Output as sine wave or pulse, usually used in the generation of plasma, satellite communication, radar and navigation system etc. In order to realize the transmission maximum power of signal in radio frequency circuit, the impedance matching between signal source, transmission line, load end needs to be guaranteed. And impedance mismatch can generate standing wave effect, lead to signal reflection, affect signal attenuation, unstable etc. In plasma etching equipment, signal can be effectively transmitted between each part mainly by adjusting radio frequency matcher.

[0003] Radio frequency matcher is usually composed of two or more than two capacitors, inductors and transformer etc. Element. These elements are generally made of high-frequency materials such as alumina (Al2O3), zirconia (ZrO2), magnesium oxide (MgO) to meet the requirements of high-frequency circuit. By adjusting the numerical value and connection mode of these elements, impedance adjustment is completed, so as to realize impedance matching.

[0004] Based on the above problems, we propose a kind of plasma generator with adjusting function. CONTENT OF THE UTILITY MODEL

[0005] The purpose of this section is to outline some aspects of the embodiments of the utility model and briefly introduce some preferred embodiments. In this section and the abstract of the specification and the utility model name of the application, some simplification or omission may be made to avoid obscuring the purpose of this section, the abstract of the specification and the utility model name, and such simplification or omission cannot be used to limit the scope of the utility model.

[0006] In view of the problems existing in the prior art, the utility model is proposed.

[0007] Therefore, the purpose of the utility model is to provide a kind of plasma generator with adjusting function, in the process of use, can monitor the change of load end capacitance in real time and quickly set the matching of optimal capacitance.

[0008] To solve the above technical problems, according to one aspect of the utility model, the utility model provides the following technical scheme:

[0009] A kind of plasma generator with adjusting function, it includes:

[0010] Process cavity, outer cavity arranged outside the process cavity, protective cover arranged inside the outer cavity, round wafer placement platform arranged inside the process cavity, molecular pump arranged at the bottom of the process cavity;

[0011] The first coil adapter is arranged at the top of the process cavity, and the coil body is arranged at the bottom of the first coil adapter.

[0012] The 2MHz coil RF power supply is electrically connected with the first coil adapter.

[0013] The lower electrode 13.56MHz RF power supply is electrically connected with the lower electrode matching device at one end, and is electrically connected with the round wafer placement platform at the other end.

[0014] The interactive system is electrically connected with the first coil adapter and the lower electrode 13.56MHz RF power supply.

[0015] As a preferred scheme of the plasma generator with the adjusting function, the top side of the process cavity is provided with a process gas inlet.

[0016] As a preferred scheme of the plasma generator with the adjusting function, the interactive system is connected with a display.

[0017] Compared with the prior art, the beneficial effects of the plasma generator with the adjusting function are as follows: in the process of use, the change of the load end capacitance can be monitored in real time, and the matching of the optimal capacitance can be quickly set. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical scheme of the embodiments of the present application, the present application will be described in detail below in combination with the drawings and detailed embodiments. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor. Among them:

[0019] Figure 1 The present application is a structural schematic diagram.

[0020] In the drawings: 2MHz coil RF power supply 100, first coil matching device 200, coil body 201, process gas inlet 202, interactive system 300, process cavity 400, outer cavity 401, protective cover 402, wafer placement platform 403, molecular pump 404, lower electrode 13.56MHz RF power supply 501, lower electrode matching device 502. DETAILED DESCRIPTION

[0021] In order to make the above object, features and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application will be described in detail below with reference to the drawings.

[0022] In the following description, a lot of specific details are set forth in order to facilitate a thorough understanding of the present application, but the present application can also be implemented in other ways different from those described herein, and those skilled in the art can make similar generalizations without departing from the connotation of the present application, therefore the present application is not limited by the specific embodiments disclosed below.

[0023] Secondly, the present application is described in detail in combination with the schematic diagram, when the embodiments of the present application are described in detail, in order to facilitate the description, the cross-sectional view of the device structure will be partially enlarged without the general proportion, and the schematic diagram is only an example, which should not limit the scope of protection of the present application here. In addition, the three-dimensional spatial dimensions of length, width and depth should be included in actual production.

[0024] In order to make the object, technical scheme and advantage of the present application more clear, the embodiments of the present application will be described in further detail below in combination with the drawings.

[0025] The present application provides the following technical scheme: a plasma generator with adjusting function, which can monitor the load end capacitance change in real time and quickly set the optimal capacitance matching during use;

[0026] Figure 1 The present application provides the following technical scheme: a plasma generator with adjusting function, which can monitor the load end capacitance change in real time and quickly set the optimal capacitance matching during use;

[0027] Embodiment 1

[0028] Process cavity 400, outer cavity 401 arranged outside process cavity 400, protective cover 402 arranged inside outer cavity 401, round crystal placement platform 403 arranged inside process cavity 400, molecular pump 404 arranged at the bottom of process cavity 400;

[0029] The first coil adapter 200 is arranged at the top of the process cavity 400, and the coil main body 201 is arranged at the bottom of the first coil adapter 200.

[0030] 2MHz coil RF power supply 100, 2MHz coil RF power supply 100 and first coil adapter 200 are electrically connected, 2MHz coil RF power supply 100 is used to generate a specific frequency sine wave voltage;

[0031] The lower electrode 13.56MHz radio frequency power supply 501 is electrically connected with the lower electrode matching device 502 at one end, and is electrically connected with the wafer placing platform 403 at the other end, and provides impedance matching for the bias voltage of the lower electrode.

[0032] The interactive system 300 is electrically connected with the first coil matching device 200 and the lower electrode 13.56MHz radio frequency power supply 501, and can be used for debugging, monitoring and the like of impedance matching, thereby providing support for the stability of the process.

[0033] In combination Figure 1 The plasma generator with the adjusting function according to the embodiment has the following specific actions: the process gas is introduced into the process cavity 400 from the top through the process gas inlet 202, and the inductive coupling is used to excite the plasma by introducing the sine wave voltage of the specific frequency generated by the 2MHz coil radio frequency power supply 100 into the coil main body 201, so that the inductive electromagnetic field is formed in the cavity, and the excited plasma enters the process cavity 400 through the diffusion plate; the lower electrode matching device 502 is used to generate the stable bias voltage in the high-density plasma in a capacitive coupling manner, thereby realizing the uniform etching of the wafer surface. When the lower electrode is used in the process, the high-frequency high-voltage signal generated by the 13.56MHz radio frequency power supply 502 is coupled to the cavity, and the impedance generated thereby changes with the change of the internal environment of the cavity; the first coil matching device 200 collects and monitors the change of the load end, adjusts the capacitance and inductance in the matching device, and thereby realizes the maximum transmission of the real-time radio frequency energy.

[0034] Although the utility model has been described above with reference to the embodiments, various improvements can be made and the components therein can be replaced with equivalents without departing from the scope of the utility model. In particular, as long as there is no structural conflict, each feature in the embodiments disclosed by the utility model can be combined with each other in any way, and the combinations are not described exhaustively in the specification only for the consideration of omitting the length and saving the resources. Therefore, the utility model is not limited to the specific embodiments disclosed herein, but includes all the technical solutions falling within the scope of the claims.

Claims

1. A plasma generator with adjustable function, characterized in that, Comprising: A process cavity (400), an outer cavity (401) arranged outside the process cavity (400), a protective cover (402) arranged inside the outer cavity (401), a round crystal placement platform (403) arranged inside the process cavity (400), a molecular pump (404) arranged at the bottom of the process cavity (400); A first coil adapter (200) arranged at the top of the process cavity (400), a coil body (201) arranged at the bottom of the first coil adapter (200); A 2MHz coil RF power supply (100), electrically connected with the first coil adapter (200); A lower electrode 13.56MHz RF power supply (501), one end of which is electrically connected with a lower electrode matching device (502), and the other end of which is electrically connected with the round crystal placement platform (403); An interaction system (300), electrically connected with the first coil adapter (200) and the lower electrode 13.56MHz RF power supply (501).

2. The plasma generator with a belt adjusting function according to claim 1, characterized in that: A process gas inlet (202) is arranged at one side of the top of the process cavity (400).

3. The plasma generator with a belt adjusting function according to claim 1, characterized in that: The interaction system (300) is connected with a display.

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