Ultra-wideband digital phase shift structure based on GaAs technology

Abstract

The utility model discloses an ultra wide band digital phase shift structure based on GaAs technology, comprising a first switch unit and a second switch unit, the circuit topology structures of the first switch unit and the second switch unit are symmetrical, the first switch unit and the second switch unit respectively comprise an input end switch and an output end switch, an input end switch of the first switch unit and an input end switch of the second switch unit are both connected to the input end of the microstrip line, and an output end switch of the first switch unit and an output end switch of the second switch unit are both connected to the output end of the microstrip line. The straight line where the connecting line of the microstrip line input end and the microstrip line output end is located is the first symmetric line of the first switch unit and the second switch unit, three all-pass network structures which are connected in series are connected between the input end switch and the output end switch, and the six all-pass network structures are used for achieving different bandwidths respectively.

Description

TECHNICAL FIELD

[0001] The utility model relates to microwave millimeter wave technical field, concretely relates to a kind of ultra-wideband digital phase-shifting structure based on GaAs technology. BACKGROUND

[0002] In modern electronic countermeasure field, phased array system has the advantages of flexible beam pointing, multi-target, multi-function, strong anti-interference ability and high reliability, and is widely used. Phased array system is composed of a group of array transceiving units, by phase shifter and attenuator, the relative phase and amplitude of radio frequency signal of different units can be changed to strengthen the overall signal in the required direction, and suppress in the place where it is not needed, so as to realize beamforming. Compared with traditional mechanical radar system, phased array system has the advantages of fast scanning speed, flexible scanning direction, strong anti-interference ability and high reliability. With these advantages, phased array system has been widely used in radar technology. For phased array system, the working bandwidth of transceiving unit determines the working bandwidth of phased array system, the phase shift accuracy determines the beam pointing accuracy of phased array radar, and the integration difficulty and production cost directly affect the difficulty and cost of phased array radar development.

[0003] At present, there are many implementation methods of ultra-wideband digital phase shifter, for example, Lange form is adopted. Lange coupler is a quadrature coupler, there is a wideband 90° flat phase shift between its through end and coupling end, which can constitute an ultra-wideband 90°, 180° reflection type phase shifter. The disadvantage of this method is poor phase shift accuracy, therefore, how to realize ultra-wideband while improving phase shift accuracy is a problem to be solved, especially the problem of low phase shifter accuracy in the range of 10 times and more octave, this paper adopts multiple all-pass network structure in series to expand bandwidth and improve phase shift accuracy. UTILITARIAN CONTENT

[0004] The utility model aims at providing a kind of ultra-wideband digital phase-shifting structure based on GaAs technology, adopts microwave monolithic integrated circuit (MMIC) design, so that the circuit designed at the same time still has ultra-wideband and high phase shift accuracy while meeting miniaturization.

[0005] To solve the above technical problems, the utility model adopts the following scheme:

[0006] The utility model provides a kind of ultra-wideband digital phase shift structure based on GaAs technology, including first switch unit and second switch unit, the circuit topology structure of first switch unit and second switch unit is symmetrical, first switch unit and second switch unit all include input end switch, output end switch, the input end switch of first switch unit and the input end switch of second switch unit are all connected in microstrip line input end, the output end switch of first switch unit and the output end switch of second switch unit are all connected in microstrip line output end, the straight line of the connection of microstrip line input end and microstrip line output end is the first symmetry line of first switch unit and second switch unit, three series-connected all-pass network structures are connected between input end switch and output end switch, six all-pass network structures are used to realize different bandwidths respectively.

[0007] In some embodiments, each all-pass network structure includes two MIM capacitors and two symmetrically arranged spiral inductors, the two spiral inductors are connected together through a first microstrip connection line and a second microstrip connection line respectively, one of the two MIM capacitors is arranged on the symmetry line of the two spiral inductors and connected to the first microstrip connection line at one end and grounded at the other end, and the other MIM capacitor is connected in series across the second microstrip connection line.

[0008] In some embodiments, the first switch unit includes input switch M1, input switch M2, output switch M5 and output switch M6, all-pass network structure APF1, all-pass network structure APF2 and all-pass network structure APF3, all-pass network structure APF2 is an axisymmetric structure, the second symmetry line of all-pass network structure APF2 is perpendicular to the first symmetry line, all-pass network structure APF1 and all-pass network structure APF3 are arranged on the two sides of the second symmetry line respectively, input switch M1 and output switch M5, input switch M2 and output switch M6 are symmetrically arranged about the second symmetry line.

[0009] In some embodiments, the symmetry line of the two spiral inductors of all-pass network structure APF1 and the symmetry line of the two spiral inductors of all-pass network structure APF3 are both perpendicular to the second symmetry line.

[0010] In some embodiments, the second switch unit includes input switch M3, input switch M4, output switch M7 and output switch M8, all-pass network structure APF4, all-pass network structure APF5 and all-pass network structure APF6, all-pass network structure APF5 is an axisymmetric structure, the third symmetry line of all-pass network structure APF5 is perpendicular to the first symmetry line, all-pass network structure APF4 and all-pass network structure APF6 are arranged on the two sides of the third symmetry line respectively, input switch M3 and input switch M1, input switch M2 and input switch M4 are symmetrically arranged about the first symmetry line, output switch M5 and output switch M7, output switch M6 and output switch M8 are symmetrically arranged about the first symmetry line.

[0011] In some embodiments, the symmetry line of the all-pass network structure APF4 of the two spiral inductors is perpendicular to the symmetry line of the all-pass network structure APF6 of the two spiral inductors.

[0012] In some embodiments, the spiral inductor in each all-pass network structure is a hexagonal spiral inductor.

[0013] In some embodiments, the all-pass network structure APF1 includes two spiral inductors L1, and the number of turns of the spiral inductor L1 is 4.75 turns;

[0014] The all-pass network structure APF2 includes two spiral inductors L2, and the number of turns of the spiral inductor L2 is 6.75 turns;

[0015] The all-pass network structure APF3 includes two spiral inductors L3, and the number of turns of the spiral inductor L3 is 3.25 turns.

[0016] In some embodiments, the all-pass network structure APF4 includes two spiral inductors L4, and the number of turns of the spiral inductor L4 is 5.25 turns;

[0017] The all-pass network structure APF5 includes two spiral inductors L5, and the number of turns of the spiral inductor L5 is 7.75 turns;

[0018] The all-pass network structure APF6 includes two spiral inductors L6, and the number of turns of the spiral inductor L6 is 4.25 turns.

[0019] The beneficial effects of the present application are as follows:

[0020] The present application discloses a kind of based on GaAs process's ultra-wideband digital phase shift structure, is realized by six all-pass network structures for ultra-wideband phase shift, and the bandwidth different that each all-pass network realizes, to realize the miniaturization of circuit structure, the first switch unit and the second switch unit of circuit are placed oppositely, after six all-pass network structures are divided into two parts and are placed between input end switch and output end switch, entire circuit structure is compact, and still have high phase shift precision under the condition of 180 ° phase shift, can be widely applied in phased array radar system. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 The present application discloses a kind of based on GaAs process's ultra-wideband digital phase shift structure circuit topology schematic diagram of 180 ° of all-pass network;

[0022] Figure 2 The present application discloses a kind of based on GaAs process's ultra-wideband digital phase shift structure layout of 180 ° of all-pass network for the embodiment of the present application;

[0023] Figure 3 For based on Figure 1 The circuit structure simulation shows the return loss curves S11, S22, S33, and S44 in the phase-shifted and reference states.

[0024] Figure 4 For based on Figure 1 The circuit structure simulation diagram shows the insertion loss S21, S43 curves and amplitude fluctuation IL_Error curve in the phase-shifted state and reference state.

[0025] Figure 5 For based on Figure 1 The circuit structure simulation shows the phase shift (Phase_deg) and phase shift accuracy (Phase_Error) curves. Detailed Implementation

[0026] The present invention will be further described in detail below with reference to the embodiments and accompanying drawings, but the implementation of the present invention is not limited thereto.

[0027] In the description of this utility model, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "longitudinal", "lateral", "horizontal", "inner", "outer", "front", "rear", "top", "bottom", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the utility model product is in use. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0028] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set up," "have," "install," "connect," and "connect" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0029] The present invention will now be described in detail with reference to the accompanying drawings and embodiments:

[0030] like Figure 2As shown, the embodiment provides a GaAs process-based ultra-wideband digital phase shift structure, which comprises a first switch unit and a second switch unit arranged on a GaAs substrate, the circuit topological structures of the first switch unit and the second switch unit are symmetrical, the first switch unit and the second switch unit each comprise an input switch and an output switch, the input switch of the first switch unit and the input switch of the second switch unit are each connected to a microstrip line input end, the output switch of the first switch unit and the output switch of the second switch unit are each connected to a microstrip line output end, a straight line where the connection lines of the microstrip line input end and the microstrip line output end are located is a first symmetry line of the first switch unit and the second switch unit, three series-connected all-pass network structures are connected between the input switch and the output switch, and the six all-pass network structures are respectively used to realize different bandwidths. The input switch and the output switch each adopt an MMIC radio frequency switch.

[0031] Each all-pass network structure comprises two MIM capacitors and two symmetrically arranged spiral inductors, the two spiral inductors are connected together through a first microstrip connection line and a second microstrip connection line at two ends, one of the two MIM capacitors is arranged on a symmetry line of the two spiral inductors and connected at one end to the first microstrip connection line and grounded at the other end, and the other MIM capacitor is connected at two ends in series on the second microstrip connection line. And the spiral inductor in each all-pass network structure is a hexagonal spiral inductor.

[0032] The first switch unit comprises input switch M1, input switch M2, output switch M5 and output switch M6, all-pass network structure APF1, all-pass network structure APF2 and all-pass network structure APF3, all-pass network structure APF2 is an axisymmetric structure, a second symmetry line of all-pass network structure APF2 is perpendicular to the first symmetry line, all-pass network structure APF1 and all-pass network structure APF3 are respectively arranged on two sides of the second symmetry line, and input switch M1 and output switch M5 and input switch M2 and output switch M6 are symmetrically arranged about the second symmetry line.

[0033] More specifically, all-pass network structure APF1 comprises two spiral inductors L1, MIM capacitor C1 and MIM capacitor C7, MIM capacitor C7 is arranged on a symmetry line of the two spiral inductors L1 and connected in parallel at one end to the two spiral inductors L1 and grounded at the other end, wherein the number of turns of the spiral inductor L1 is 4.75 turns;

[0034] All-pass network structure APF2 comprises two spiral inductors L2, MIM capacitor C2 and MIM capacitor C8, MIM capacitor C8 is arranged on a symmetry line of the two spiral inductors L2 and connected in parallel at one end to the two spiral inductors L2 and grounded at the other end, and the number of turns of the spiral inductor L2 is 6.75 turns;

[0035] The all-pass network structure APF3 includes two spiral inductors L3, a MIM capacitor C3 and a MIM capacitor C9. The MIM capacitor C9 is arranged on the symmetry line of the two spiral inductors L3 and has one end connected in parallel with the two spiral inductors L3 and the other end grounded. The number of turns of the spiral inductor L3 is 3.25 turns.

[0036] It can be seen that the second microstrip connection lines of the all-pass network structures APF1-APF3 are connected in series and have two ends connected with the input switch M1, the input switch M2, the output switch M5 and the output switch M6 respectively. The MIM capacitors C1, C2 and C3 are connected in series through the second microstrip connection lines.

[0037] In terms of structure, the symmetry lines of the two spiral inductors L1 of the all-pass network structure APF1 and the symmetry lines of the two spiral inductors L3 of the all-pass network structure APF3 are both perpendicular to the second symmetry line.

[0038] Similarly, the first switch unit and the second switch unit have the same structure layout and the same connection mode. The difference is that the parameters of the three all-pass networks in the second switch unit are different from the parameters of the three all-pass network structures in the first switch unit. Specifically, the second switch unit includes an input switch M3, an input switch M4, an output switch M7 and an output switch M8, an all-pass network structure APF4, an all-pass network structure APF5 and an all-pass network structure APF6. The all-pass network structure APF5 is an axial symmetric structure. The third symmetry line of the all-pass network structure APF5 is perpendicular to the first symmetry line. The all-pass network structure APF4 and the all-pass network structure APF6 are arranged on the two sides of the third symmetry line. The input switch M3 and the input switch M1, and the input switch M2 and the input switch M4 are symmetrically arranged about the first symmetry line. The output switch M5 and the output switch M7, and the output switch M6 and the output switch M8 are symmetrically arranged about the first symmetry line.

[0039] Specifically, the all-pass network structure APF4 includes two spiral inductors L4, a MIM capacitor C4 and a MIM capacitor C10. The MIM capacitor C10 is arranged on the symmetry line of the two spiral inductors L4 and has one end connected in parallel with the two spiral inductors L4 and the other end grounded. The number of turns of the spiral inductor L4 is 5.25 turns.

[0040] The all-pass network structure APF5 includes two spiral inductors L5, a MIM capacitor C5 and a MIM capacitor C11. The MIM capacitor C11 is arranged on the symmetry line of the two spiral inductors L5 and has one end connected in parallel with the two spiral inductors L5 and the other end grounded. The number of turns of the spiral inductor L5 is 7.75 turns.

[0041] The all-through network structure APF6 includes two spiral inductors L6, MIM capacitor C6 and MIM capacitor C12. The MIM capacitor C12 is located on the symmetrical line of the two spiral inductors L6, with one end connected in parallel with the two spiral inductors L6 and the other end grounded. The spiral inductors L6 have 4.25 turns.

[0042] It can be seen that after the second microstrip connecting lines of the all-pass network structure APF1-APF3 are connected in series, their two ends are connected to input switches M3, M4, output switches M7 and M8 respectively, and the MIM capacitors C4, C5 and C6 are connected in series through the microstrip connecting lines. The lines of symmetry of the two spiral inductors in the all-pass network structure APF4 and the two spiral inductors in the all-pass network structure APF6 are both perpendicular to the third line of symmetry.

[0043] like Figure 1 As shown, the circuit topology equivalent to the circuit structure in this embodiment includes the following current topology: a first DC power supply V1 and a second DC power supply V2; the two ends (source or drain) of input switch M1 are respectively connected to the microstrip line input terminal and one end of input switch M2, the gate of input switch M1 is connected to the first DC power supply V1 through a gate resistor Rg, the two ends of input switch M2 are respectively connected to the all-pass network structure APF1 and grounded, and the gate of input switch M2 is connected to the second DC power supply V2 through a gate resistor Rg; the two ends (source or drain) of input switch M3 are respectively connected to the microstrip line input terminal and one end of input switch M4, the gate of input switch M3 is connected to the second DC power supply V2 through a gate resistor Rg; the two ends of input switch M4 are respectively connected to the all-pass network structure APF4 and grounded, and the gate of input switch M4 is connected to the first DC power supply V1 through a gate resistor Rg;

[0044] The two ends (source or drain) of input switch M5 are connected to the microstrip line output terminal and one end of input switch M6, respectively. The gate of input switch M5 is connected to the first DC power supply V1 through the gate resistor Rg. The two ends of input switch M6 are connected to the all-pass network structure APF3 and grounded, respectively. The gate of input switch M6 is connected to the second DC power supply V2 through the gate resistor Rg. The two ends (source or drain) of input switch M7 are connected to the microstrip line input terminal and one end of input switch M8, respectively. The gate of input switch M7 is connected to the second DC power supply V2 through the gate resistor Rg. The two ends of input switch M8 are connected to the all-pass network structure APF6 and grounded, respectively. The gate of input switch M8 is connected to the first DC power supply V1 through the gate resistor Rg.

[0045] In the all-pass network structure, APF1-APF3 are connected in series, capacitors C1-C3 are connected in series between switches M1 and M5, capacitors C7-C9 are connected in parallel between inductors L1-L3, and inductors L1-L3 are connected in parallel between capacitors C1-C3.

[0046] The APF4-APF6 are connected in series, the capacitor C4-C6 are connected in series between the switch M3 and M7, the capacitor C10-C12 are connected in parallel between the inductor L4-L6 respectively, and the inductor L4-L6 are connected in parallel between the capacitor C4-C6 respectively.

[0047] The use flow design concept of the embodiment is:

[0048] Due to the reasons of expanding the phase shift bandwidth and improving the phase shift precision, the application proposes a circuit structure as shown in the figure Figure 1 The circuit has ultra-wideband and high phase shift precision while meeting miniaturization, and the relative bandwidth can be expanded to 111% through six all-pass network structures, and the circuit structure is compact.

[0049] As shown in the figure Figures 3-5 Based on the simulation results Figure 2 It can be seen that when the frequency is 2GHz-7GHz, the simulation phase shift is between 179° and 181°, the phase shift precision is within ±1°, the insertion loss is less than 3.1dB, the input return loss is less than 18dB, the output return loss is less than-17.7dB, and the amplitude fluctuation is between-0.34dB and-0.17dB.

[0050] It can be understood that the above embodiments are only exemplary embodiments adopted for illustrating the principles of the utility model, but the utility model is not limited thereto. For ordinary skilled persons in the art, various modifications and improvements can be made without departing from the spirit and essence of the utility model, and these modifications and improvements are also regarded as the protection scope of the utility model.

Claims

1. A GaAs process based ultra-wideband digital phase shifter architecture, characterized by, The first switch unit and the second switch unit are symmetrical in circuit topology, and each of the first switch unit and the second switch unit comprises an input switch and an output switch.

2. The ultra-wideband digital phase-shifting structure based on GaAs process according to claim 1, characterized in that, Each all-pass network structure comprises two MIM capacitors and two symmetrically arranged spiral inductors, the two spiral inductors are connected together through a first microstrip connection line and a second microstrip connection line at two ends, one of the two MIM capacitors is arranged on the symmetry line of the two spiral inductors and connected at one end with the first microstrip connection line and grounded at the other end, and the other MIM capacitor is connected at two ends in series on the second microstrip connection line.

3. The ultra-wideband digital phase shifter based on GaAs technology according to claim 2, characterized in that, The first switch unit comprises input switch M1, input switch M2, output switch M5 and output switch M6, all-pass network structure APF1, all-pass network structure APF2 and all-pass network structure APF3, all-pass network structure APF2 is an axial symmetric structure, the second symmetry line of all-pass network structure APF2 is perpendicular to the first symmetry line, all-pass network structure APF1 and all-pass network structure APF3 are arranged on two sides of the second symmetry line respectively, and input switch M1 and output switch M5 and input switch M2 and output switch M6 are symmetrically arranged about the second symmetry line.

4. The ultra-wideband digital phase shifter based on GaAs technology according to claim 3, characterized in that, The symmetry lines of the two spiral inductors of all-pass network structure APF1 and the symmetry lines of the two spiral inductors of all-pass network structure APF3 are both perpendicular to the second symmetry line.

5. The ultra-wideband digital phase-shifting structure based on GaAs technology according to claim 2, characterized in that, The second switch unit comprises input switch M3, input switch M4, output switch M7 and output switch M8, all-pass network structure APF4, all-pass network structure APF5 and all-pass network structure APF6, all-pass network structure APF5 is an axial symmetric structure, the third symmetry line of all-pass network structure APF5 is perpendicular to the first symmetry line, all-pass network structure APF4 and all-pass network structure APF6 are arranged on two sides of the third symmetry line respectively, input switch M3 and input switch M1 and input switch M2 and input switch M4 are symmetrically arranged about the first symmetry line, and output switch M5 and output switch M7 and output switch M6 and output switch M8 are symmetrically arranged about the first symmetry line.

6. The ultra-wideband digital phase-shifting structure based on GaAs technology according to claim 5, characterized in that, The symmetry lines of the two spiral inductors of all-pass network structure APF4 and the symmetry lines of the two spiral inductors of all-pass network structure APF6 are both perpendicular to the third symmetry line.

7. The ultra-wideband digital phase-shifting structure based on GaAs technology according to claim 2, characterized in that, The spiral inductors in each all-pass network structure are hexagonal spiral inductors.

8. The ultra-wideband digital phase shifter based on GaAs technology according to claim 3, characterized in that, All-pass network structure APF1 comprises two spiral inductors L1, and the number of turns of spiral inductor L1 is 4.75 turns; All-pass network structure APF2 comprises two spiral inductors L2, and the number of turns of spiral inductor L2 is 6.75 turns; The all-pass network structure APF3 includes two spiral inductors L3, and the number of turns of the spiral inductor L3 is 3.25 turns.

9. The ultra-wideband digital phase shifter based on GaAs technology according to claim 5, characterized in that, The all-pass network structure APF4 includes two spiral inductors L4, and the number of turns of the spiral inductor L4 is 5.25 turns. The all-pass network structure APF5 includes two spiral inductors L5, and the number of turns of the spiral inductor L5 is 7.75 turns. The all-pass network structure APF6 includes two spiral inductors L6, and the number of turns of the spiral inductor L6 is 4.25 turns.

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