Laser lift-off device

Abstract

The utility model provides a laser stripping device. The laser lift-off device, which converts a first beam into a second beam having a width in the short-axis direction and the long-axis direction, comprises: a laser beam generation unit that generates the first beam; a homogenizer that homogenizes the first light beam; and a wedge prism that refracts at least a portion of the first light beam that has passed through the homogenizer, in which the wedge prism is configured so as to refract at least a portion of the first light beam that has passed through the homogenizer. The energy density of the second light beam incident to the second area of the image plane is greater than the energy density of the second light beam incident to the first area of the image plane.

Description

Technical Field

[0001] This utility model relates to a laser stripping device and a substrate stripping method using the laser stripping device. Background Technology

[0002] Display devices can be manufactured into flexible devices by utilizing flexible substrates with excellent flexibility.

[0003] However, due to the high flexibility of flexible substrates, they need to be supported during the display device manufacturing process. Therefore, after forming the flexible substrate on a carrier substrate made of materials such as glass, the flat panel display device manufacturing process is carried out, and then the carrier substrate is removed.

[0004] The carrier substrate can be removed by a variety of methods, among which research on laser lift-off methods using lasers is actively underway. Utility Model Content

[0005] The technical problem to be solved by this utility model is to provide a laser stripping device that improves the reliability of the laser stripping process and a substrate stripping method using the laser stripping device.

[0006] The technical problems of this utility model are not limited to those mentioned above. Other technical problems not mentioned can be clearly understood by those skilled in the art through the following description.

[0007] A laser stripping apparatus according to one embodiment for solving the above-mentioned technical problems is a laser stripping apparatus for converting a first beam into a second beam having widths in both the minor and major axis directions. The apparatus includes: a laser beam generating unit for generating the first beam; a homogenizer for homogenizing the first beam; and a wedge prism for refracting at least a portion of the first beam passing through the homogenizer. The wedge prism is configured to refract at least a portion of the first beam passing through the homogenizer such that the energy density of the second beam incident on a second region of an image plane is greater than the energy density of the second beam incident on a first region of the image plane.

[0008] The wedge prism may include a first wedge prism and a second wedge prism arranged at intervals from each other in the long axis direction.

[0009] The second region may include a first sub-region and a second sub-region respectively arranged on both sides of the first region. The first wedge prism may be configured to refract a portion of the first light beam passing through the homogenizer, so that the second light beam is incident on the first sub-region of the image plane. The second wedge prism may be configured to refract a portion of the first light beam passing through the homogenizer, so that the second light beam is incident on the second sub-region of the image plane.

[0010] The wedge prism may also be configured to refract at least a portion of the first beam passing through the homogenizer, such that the energy density of the second beam incident on the third region of the image plane is less than the energy density of the second beam incident on the first region of the image plane, wherein the second region may be located between the first region and the third region.

[0011] The wedge prism can also be configured to refract at least a portion of the first beam passing through the homogenizer, such that the difference between the energy density of the second beam incident on the first region and the second region is the same as the difference between the energy density of the second beam incident on the first region and the third region.

[0012] The location of the second region can be determined based on the location of the region where the first beam incident on the wedge prism overlaps with the wedge prism.

[0013] The energy density of the second beam incident on the second region can be determined based on the area of ​​the region where the first beam incident on the wedge prism overlaps with the wedge prism.

[0014] The laser stripping device may further include a telescope lens disposed between the laser beam generating unit and the homogenizer, and transmitting the first beam at a magnified or equal magnification.

[0015] The laser ablation device may further include a short-axis slit disposed between the homogenizer and the wedge prism, and transmitting a portion of the first beam in the short-axis direction.

[0016] The laser ablation device may further include: a short-axis Fourier lens, arranged between the homogenizer and the short-axis slit, and focusing the first beam transmitted through the telescope lens onto the short-axis slit along the short-axis direction.

[0017] The laser stripping device may further include: a long-axis Fourier lens, arranged between the wedge prism and the image plane into which the second beam is incident, and focusing the first beam transmitted through the telescope lens onto the image plane.

[0018] The laser ablation device may further include: a short-axis projection lens, arranged between the wedge prism and the image plane into which the second beam is incident, and for adjusting the width of the first beam passing through the short-axis slit in the short-axis direction.

[0019] The laser stripping device may further include a beam cutter disposed between the wedge prism and the image plane, and blocking the path of the first beam incident on the outer region of the second region.

[0020] The beam cutter blocks the path of the first beam incident on the outer region of the second region, such that the energy density of the second beam incident on the beam removal region outside the second region of the image plane is less than the energy density of the second beam incident on the second region.

[0021] The wedge prism is configured to refract at least a portion of the first beam passing through the homogenizer, such that the energy density of the second beam incident on the second region and the energy density of the second beam incident on the first region are constant.

[0022] According to one embodiment, a substrate peeling method is provided to solve the above-mentioned technical problems. This method peels the carrier substrate from the first substrate by irradiating a display device comprising a carrier substrate, a first substrate disposed on the carrier substrate, a barrier layer disposed on the first substrate, and a second substrate disposed on the barrier layer with a laser generated from a laser peeling device. In a plane, the barrier layer is larger than the first substrate. The display device includes: an effective region with pixels disposed thereon; and a protruding region disposed outside the effective region, wherein the barrier layer does not overlap with the first substrate, and the energy intensity of the laser irradiating the effective region is less than the energy intensity of the laser irradiating the protruding region.

[0023] The laser may include a first beam and a second beam. The laser stripping device can convert the first beam into a second beam with widths in the minor axis and major axis directions. The laser stripping device may include: a laser beam generating unit for generating the first beam; a homogenizer for homogenizing the first beam; and a wedge prism for refracting at least a portion of the first beam passing through the homogenizer. The beam profile of the second beam may include: a first region; and a second region having higher energy than the first region.

[0024] The second beam in the first region can illuminate the effective region, and the second beam in the second region can illuminate the protruding region.

[0025] In the beam profile of the second beam, the position of the second region can be determined based on the position of the region where the first beam incident on the wedge prism overlaps with the wedge prism.

[0026] In the beam profile of the second beam, the energy intensity of the second region can be determined based on the area of ​​the region where the first beam incident on the wedge prism overlaps with the wedge prism.

[0027] According to an embodiment of the present invention, a laser stripping apparatus and a substrate stripping method using the laser stripping apparatus can improve the reliability of the laser stripping process.

[0028] The effects of the embodiments are not limited to those illustrated above, and more diverse effects are included in this specification. Attached Figure Description

[0029] Figure 1 This is a cross-sectional view showing a display device being manufactured according to an embodiment.

[0030] Figure 2 It is shown Figure 1 Plan view of region S1.

[0031] Figure 3 It is shown Figure 2 A cross-sectional view of region S2.

[0032] Figure 4 This is a schematic diagram showing the energy profile of the final laser beam applied to the carrier substrate and the panel substrate when a laser lift-off process is performed using a laser lift-off apparatus according to an embodiment.

[0033] Figure 5 This is a schematic block diagram illustrating a laser ablation apparatus according to one embodiment.

[0034] Figure 6 This is a schematic perspective view showing a laser ablation apparatus according to an embodiment.

[0035] Figure 7 It is magnification Figure 6 An enlarged view of region A.

[0036] Figure 8 It is magnification Figure 6 A magnified view of region B.

[0037] Figure 9 It is magnification Figure 6 A magnified view of region C.

[0038] Figure 10This is a schematic diagram illustrating the energy distribution of the final laser beam in a laser stripping apparatus according to a prior art embodiment.

[0039] Figure 11 This is a schematic diagram showing the energy distribution of the final laser beam in a laser stripping apparatus according to one embodiment.

[0040] Figure 12 This is a schematic cross-sectional view illustrating the process of peeling a carrier substrate and a panel substrate using a laser peeling apparatus according to an embodiment.

[0041] Figure 13 This is a schematic diagram showing the movement path of a laser beam in the long axis direction when the wedge prisms according to one embodiment are arranged at different positions in the long axis direction.

[0042] Figure 14 This is a schematic diagram illustrating the illuminance distribution of a laser beam passing through a short-axis slit according to an embodiment, which exemplarily shows a case where wedge prisms are arranged at different positions relative to each other in the long-axis direction.

[0043] Figure 15 This is a schematic diagram showing the energy distribution of the final laser beam when the wedge prisms according to one embodiment are arranged at different positions along the long axis.

[0044] Figure 16 This is a schematic diagram showing the movement path of a laser beam in the short axis direction when the wedge prisms according to one embodiment are arranged at different positions in the short axis direction.

[0045] Figure 17 This is a schematic diagram illustrating the illuminance distribution of a laser beam passing through a short-axis slit according to an embodiment, which exemplarily shows a case where the wedge prisms are arranged at different positions relative to each other in the short-axis direction.

[0046] Figure 18 This is a schematic diagram showing the energy distribution of the final laser beam when the wedge prisms according to one embodiment are arranged at different positions relative to each other in the short axis direction.

[0047] Figure 19 This is a schematic diagram showing the movement path of the laser beam in the long axis direction of a laser stripping apparatus according to another embodiment.

[0048] Figure 20 This is a schematic diagram illustrating the energy distribution of the final laser beam in a laser stripping apparatus according to another embodiment.

[0049] Explanation of reference numerals in the attached figures

[0050] Detailed Implementation

[0051] References and Appendix Figure 1 The advantages and features of this invention, as well as the methods for achieving them, will become clear from the detailed embodiments described below. However, this invention can be implemented in many different forms and is not limited to the embodiments disclosed below. The purpose of providing these embodiments is solely to complete the disclosure of this invention and to fully inform those skilled in the art of the invention of its scope, which is defined only by the scope of the claims.

[0052] The reference to "on" an element or layer includes situations where it is immediately above or adjacent to another element or layer, or where another layer or element is sandwiched in between. Similarly, the terms "below," "left," and "right" include situations where it is arranged directly adjacent to another element, or where another layer or material is sandwiched in between. Throughout the specification, the same reference numerals refer to the same constituent elements.

[0053] The following description refers to specific embodiments.

[0054] Figure 1 This is a cross-sectional view showing a display device being manufactured according to an embodiment.

[0055] Reference Figure 1 According to one embodiment, a display device DD under manufacturing may include a carrier substrate CST, a display panel DP, and an upper protective layer UPL.

[0056] To function as a support for the display panel (DP) during the manufacturing process of the display device (DD), the carrier substrate (CST) may comprise a rigid material. During the manufacturing process of the display device (DD), the carrier substrate (CST) may be mounted on the stage (STG) (see reference). Figure 5 )superior.

[0057] Because laser light can be transmitted during the laser-based lift-off process, the carrier substrate CST can include a transparent material. As an example, the carrier substrate CST can be made of glass with SiO2 as its main component. As another example, the carrier substrate CST can include at least one of borosilicate glass, fused silica glass, and quartz glass.

[0058] If the display device DD is completed, the carrier substrate CST can be peeled off from the panel substrate PST and removed from the display device DD.

[0059] The display panel DP may include the panel substrate PST, the display element layer DEL, and the encapsulation layer TFE.

[0060] The panel substrate PST can be disposed on the carrier substrate CST. In one embodiment, the panel substrate PST can be a flexible substrate, but is not limited thereto.

[0061] In several embodiments, the panel substrate PST may include a plastic material. For example, the panel substrate PST may be formed using polyamide or polyimide to provide excellent heat resistance to withstand high-temperature processes alongside low-temperature polysilicon (LTPS) manufacturing processes, while also being flexible when processed into a film form. The panel substrate PST can be formed by coating a polyamide or polyimide solution onto a carrier substrate CST using a spin coating method and then curing it, or by attaching a film-type polyamide or polyimide substrate to the carrier substrate CST using an adhesive or by lamination.

[0062] The display element layer (DEL) can be disposed on the panel substrate (PST). The display element layer (DEL) may include light-emitting elements and circuit elements for driving the light-emitting elements.

[0063] The encapsulation layer TFE can be disposed on the display element layer DEL. The encapsulation layer TFE can seal the display element layer DEL. The encapsulation layer TFE can be in the form of a thin film or a multi-layer film. For example, the encapsulation layer TFE can be a thin film encapsulation film. The encapsulation layer TFE can be made using materials such as silicon oxide (SiO2). x ) or silicon nitride (SiN) x The structure consists of films made of inorganic materials such as epoxy resin and polyimide, which are alternately formed to form films. However, it is not limited to this; the encapsulation layer TFE may also include films made of low-melting-point glass.

[0064] The upper protective layer (UPL) can be disposed on the encapsulation layer (TFE). The UPL prevents the TFE from being damaged during the peeling of the panel substrate (PST) from the carrier substrate (CST). The UPL can be removed after the panel substrate (PST) has been peeled from the carrier substrate (CST).

[0065] Figure 2 It is shown Figure 1 Plan view of region S1.

[0066] Reference Figure 1 And refer to Figure 2 The display device DD may include an effective area AA. The effective area AA may be an area containing multiple pixels. The effective area AA may be an area for displaying an image. The effective area AA may be referred to as the display area.

[0067] In several embodiments, the periphery of the effective region AA may be located inside the periphery of the panel substrate PST. In a plane, the size of the panel substrate PST may be larger than the size of the effective region AA. The remaining area of ​​the panel substrate PST, excluding the effective region AA, may be an inactive area or a non-display area.

[0068] In several embodiments, the periphery of the panel substrate PST may be located inside the periphery of the carrier substrate CST. In a planar plane, the size of the carrier substrate CST may be larger than the size of the panel substrate PST.

[0069] The carrier substrate CST may include a boundary region BR. The boundary region BR may be the boundary from the overlap of the panel substrate PST and the carrier substrate CST to the point where they no longer overlap. For example, based on the boundary region BR, the panel substrate PST may be arranged on the inner side, while the panel substrate PST may not be arranged on the outer side.

[0070] Figure 3 It is shown Figure 2 A cross-sectional view of region S2.

[0071] Reference Figure 1 and Figure 2 And refer to Figure 3 The panel substrate PST may include a first substrate SUB1, a first barrier layer BL1, a second barrier layer BL2, and a second substrate SUB2. The accompanying drawings show the second substrate SUB2 disposed on the second barrier layer BL2, but the arrangement is not limited to this. The stacking order of the second barrier layer BL2 and the second substrate SUB2 can be changed. For example, the second barrier layer BL2 may also be disposed on the second substrate SUB2.

[0072] The first substrate SUB1 can be disposed on the carrier substrate CST. The first substrate SUB1 can have a smaller area than the carrier substrate CST. Therefore, the first substrate SUB1 can not overlap with at least a portion of the carrier substrate CST.

[0073] In one embodiment, the first substrate SUB1 may include an organic material. For example, the first substrate SUB1 may include one or more of the group consisting of polyamide resin and polyimide resin, but is not limited thereto.

[0074] A first barrier layer BL1 may be disposed on a first substrate SUB1. The first barrier layer BL1 may have an area larger than the first substrate SUB1. Therefore, the first barrier layer BL1 may completely cover the first substrate SUB1. The first barrier layer BL1 may be in contact with at least a portion of the carrier substrate CST.

[0075] In one embodiment, the first barrier layer BL1 may include an inorganic material. For example, the first barrier layer BL1 may include silicon nitride (SiN). x ), aluminum nitride (AlN) x ), titanium nitride (TiN) x ), silicon oxide (SiO) x ), aluminum oxide (AlO) x Titanium oxide (TiO) x ), silicon carbide (SiO) x C y ) and silicon nitride oxides (SiO) x N y ( ) is one or more of the groups, but is not limited to them.

[0076] The second barrier layer BL2 can be disposed on the first barrier layer BL1. The second barrier layer BL2 can have a larger area than the first barrier layer BL1. Therefore, the second barrier layer BL2 can completely cover the first barrier layer BL1.

[0077] In one embodiment, the second barrier layer BL2 may include an inorganic material. The second barrier layer BL2 may include one or more of the materials described above with reference to the first barrier layer BL1, but is not limited thereto.

[0078] The second substrate SUB2 can be disposed on the second barrier layer BL2. The second substrate SUB2 can have a larger area than the first substrate SUB1. The second substrate SUB2 and the first substrate SUB1 can have ends that do not overlap each other. When the second substrate SUB2 has a larger area than the first substrate SUB1, the second substrate SUB2 can be formed with a protruding region A that protrudes more than the first substrate SUB1 in the length direction.

[0079] The protruding area A may include a first protruding area A1 and a second protruding area A2. The first protruding area A1 may be arranged on one side of the effective area AA, and the second protruding area A2 may be arranged on the other side of the effective area AA.

[0080] In one embodiment, the second substrate SUB2 may include an organic material. The second substrate SUB2 may include one or more of the materials described above with reference to the first substrate SUB1, but is not limited thereto.

[0081] The boundary region BR may include a first boundary region BR1 and a second boundary region BR2. The first boundary region BR1 may be arranged on one side of the effective region AA, and the second boundary region BR2 may be arranged on the other side of the effective region AA.

[0082] The protruding region A may overlap with a portion of each of the first barrier layer BL1 and the second barrier layer BL2 disposed between the carrier substrate CST and the second substrate SUB2.

[0083] Figure 4 This is a schematic diagram showing the energy distribution of the final laser beam applied to the carrier substrate and the panel substrate when a laser lift-off process is performed using a laser lift-off apparatus according to an embodiment.

[0084] Reference Figures 1 to 3 And refer to Figure 4 To separate the carrier substrate CST from the panel substrate PST, the laser peeling device 1 (refer to...) Figure 5 Appropriate energy needs to be applied to the area where the panel substrate (PST) and the carrier substrate (CST) are in contact. For example, in laser lifter 1 (see reference 1) Figure 5 If the appropriate energy is not applied, the first substrate SUB1 cannot be properly peeled off, which may damage the structure of the display device DD.

[0085] In addition, since pixels are arranged in the effective area AA, the effective area AA needs to be stripped with relatively lower energy than the areas outside the effective area AA to prevent pixel damage.

[0086] For example, in laser ablation device 1 (refer to...) Figure 5 When high energy is applied to the effective area AA, the first substrate SUB1 may be damaged by the high energy of the laser beam. At this time, the adhesive force of the structure arranged on the first substrate SUB1 may weaken, and the encapsulation layer TFE may be delaminated.

[0087] Therefore, it is necessary to use a laser beam with relatively low energy incident on the panel substrate PST to peel off the effective region AA. A laser peeling apparatus 1 according to an embodiment described later (see...) Figure 5 Appropriately low energy can be applied to the effective area AA. Therefore, the risk of TFE encapsulation layer delamination can be reduced.

[0088] In addition, since the protruding area A is the area where the first barrier layer BL1 and the second barrier layer BL2 are arranged between the carrier substrate CST and the second substrate SUB2, the energy intensity of the laser beam reaching the second substrate SUB2 can be reduced by the first barrier layer BL1 and the second barrier layer BL2.

[0089] Therefore, it is necessary to peel off the protruding region A with a relatively higher energy than that required for the effective region AA. If a high energy is not applied to the protruding region A, peeling of the protruding region A portion of the second substrate SUB2 may not occur. In this case, if a peeling blade is used for complete peeling, the first substrate SUB1 may be damaged when the peeling blade passes between the carrier substrate CST and the first substrate SUB1.

[0090] According to one embodiment described later, the laser ablation apparatus 1 can apply appropriately high energy to the protruding region A. Accordingly, the reliability of the laser ablation process can be improved.

[0091] For example, such as Figure 4 As shown, the effective region AA can be stripped by a laser beam with a first energy density E1. Within the effective region AA, the laser beam can have a substantially uniform first energy density E1.

[0092] The protruding region A and the boundary region BR can be stripped by a laser beam with a second energy density E2. Near the protruding region A, the laser beam can have a substantially uniform second energy density E2. The laser beam can have a first region W1 and a second region W2, which are intervals where the second energy density E2 is constant, according to the energy density curve of the region.

[0093] The first energy density E1 can be lower than the second energy density E2. The first energy density E1 and the second energy density E2 can have a predetermined energy difference d1.

[0094] According to one embodiment described later, the laser stripping apparatus 1 can input appropriate energy according to the region as described above. The method for adjusting the energy of the incident laser beam according to the region for the laser stripping apparatus 1 will be referred to... Figure 5 The following will explain this further.

[0095] Figure 5 This is a schematic block diagram illustrating a laser ablation apparatus according to one embodiment. Figure 6 This is a schematic perspective view showing a laser ablation apparatus according to an embodiment. Figure 7 It is magnification Figure 6 An enlarged view of region A. Figure 8 It is magnification Figure 6 A magnified view of region B. Figure 9 It is magnification Figure 6 A magnified view of region C.

[0096] Reference Figures 5 to 9According to one embodiment, the laser peeling apparatus 1 can be an apparatus capable of peeling the carrier substrate CST from the panel substrate PST using a laser. For example, the laser peeling apparatus 1 can be an excimer laser peeling apparatus (ELP), but is not limited thereto.

[0097] The laser stripping device 1 may include a laser beam generating unit 100, a telescope lens 200, a homogenizer 300, a short-axis Fourier lens 400, a short-axis slit 500, a path adjustment unit 600, a wedge prism 700, a long-axis Fourier lens 800, a short-axis projection lens 900, and a stage STG.

[0098] The laser beam generating unit 100 can generate a laser beam LSR. In one embodiment, the laser beam generating unit 100 can generate the laser beam LSR using an excimer laser. However, this disclosure is not limited thereto. In another embodiment, the laser beam generating unit 100 can generate the laser beam LSR using a solid-state laser.

[0099] The laser beam generating unit 100 may include at least one light source. The light source can generate a laser beam LSR using a laser. The laser beam LSR can be generated in a Gaussian configuration. The laser beam LSR can have a wavelength from 300 nm to 410 nm, but is not limited to this.

[0100] A laser beam LSR can be converted into a final laser beam LSRL using various optical devices. The final laser beam LSRL can have a line shape with a major axis length Dx in the major axis direction LA and a minor axis length Dy in the minor axis direction SA.

[0101] The following describes various optical devices. These optical devices may include a telescope lens 200, a homogenizer 300, a short-axis Fourier lens 400, a short-axis slit 500, a path adjustment unit 600, a wedge prism 700, a long-axis Fourier lens 800, and a short-axis projection lens 900.

[0102] In the accompanying drawings, an embodiment in which the telescope lens 200, homogenizer 300, fourier lens 400, slit 500, path adjustment unit 600, wedge prism 700, long-axis Fourier lens 800, and projection lens 900 are implemented as lenses is shown as an example, but the embodiment is not limited thereto. For example, the telescope lens 200, homogenizer 300, fourier lens 400, slit 500, path adjustment unit 600, wedge prism 700, long-axis Fourier lens 800, and projection lens 900 can be implemented using at least one of the lenses and mirrors.

[0103] Telescope lens 200 can magnify and transmit the incident laser beam LSR, or transmit it at the same magnification. Although not shown in the figures, telescope lens 200 may include a first telescope lens that adjusts the magnification (or power) in the major axis direction LA and a second telescope lens that adjusts the magnification (or power) in the minor axis direction SA. However, it is not limited to this; a single telescope lens 200 may adjust both the magnification (or power) in the major axis direction LA and the minor axis direction SA.

[0104] The homogenizer 300 can convert a laser beam LSR with a Gaussian energy density distribution into a laser beam LSR with a uniform energy density in the long axis direction LA and the short axis direction SA. The homogenizer 300 may include at least one of a saw tooth lens, a light guide made of mirrors, and a fly's eye lens.

[0105] In several embodiments, homogenizer 300 may include a short-axis homogenizer 310 and a long-axis homogenizer 320. The short-axis homogenizer 310 can generate a laser beam LSR with a uniform energy density in the short-axis direction SA, and the long-axis homogenizer 320 can generate a laser beam LSR with a uniform energy density in the long-axis direction LA.

[0106] Figure 7 This is a diagram showing the illuminance distribution of the laser beam LSR after passing through the short-axis homogenizer 310. (See diagram for example.) Figure 7As shown, the laser beam LSR passing through the short-axis homogenizer 310 can have a uniform energy density along the short-axis direction SA. For example, the laser beam LSR passing through the short-axis homogenizer 310 can be divided into multiple laser beam LSRs spaced apart at predetermined intervals along the short-axis direction SA. The multiple laser beam LSRs spaced apart at predetermined intervals along the short-axis direction SA can have a uniform energy density.

[0107] Although not shown in the accompanying drawings, the laser beam LSR passing through the long-axis homogenizer 320 can have a uniform energy density along the long axis direction. For example, the laser beam LSR passing through the long-axis homogenizer 320 can be divided into multiple laser beam LSRs spaced apart at predetermined intervals along the long axis direction LA. These multiple laser beam LSRs spaced apart at predetermined intervals along the long axis direction LA can have a uniform energy density.

[0108] The accompanying drawings illustrate the laser beam LSR passing through the short-axis homogenizer 310 and then the long-axis homogenizer 320, but are not limited to this. For example, the order of the short-axis homogenizer 310 and the long-axis homogenizer 320 can be changed. In this case, the laser beam LSR can pass through the long-axis homogenizer 320 and then through the short-axis homogenizer 310.

[0109] The short-axis Fourier lens 400 can alter the path of the laser beam LSR, causing the laser beam LSR, which passes through the short-axis homogenizer 310 and diffuses and propagates along the short-axis direction SA, to be focused onto the short-axis slit 500. In some embodiments, the short-axis Fourier lens 400 may include a cylindrical convex lens, but is not limited thereto.

[0110] The short-axis slit 500 can determine the width of the laser beam LSR in the short-axis direction SA. For example, the short-axis slit 500 can include an opening having a short width in the short-axis direction SA and a long width in the long-axis direction LA. The width of the laser beam LSR in the short-axis direction SA through the opening can be limited to the same dimension as the width of the opening.

[0111] The path adjustment unit 600 can adjust the moving distance and direction of the laser beam LSR according to the design structure of the laser stripping device 1. In some embodiments, the path adjustment unit 600 may include at least one mirror. For example, the path adjustment unit 600 may include a first mirror 610 and a second mirror 620, but is not limited thereto. The number and position of the mirrors can vary.

[0112] A laser beam LSR can be deflected by a mirror, altering its direction of travel. Depending on the degree of this change, the distance the laser beam LSR can travel can be increased, even within confined spaces. Consequently, the focal point and diffusion degree of the laser beam LSR can vary.

[0113] In some embodiments, the path adjustment unit 600 may be omitted.

[0114] The wedge prism 700 can refract the laser beam LSR passing through it. The wedge prism 700 can increase the energy density of the final laser beam LSRL in a specific region by refracting at least a portion of the laser beam LSR passing through the short-axis slit 500.

[0115] Figure 8 This is a diagram showing the illuminance distribution of the laser beam LSR passing through the short-axis slit 500. (As shown...) Figure 8 As shown, the wedge prism 700 may overlap with at least a portion of the laser beam LSR passing through the short-axis slit 500. For example, the wedge prism 700 may include a first wedge prism 710 and a second wedge prism 720. The first wedge prism 710 and the second wedge prism 720 may be arranged spaced apart from each other in the long-axis direction LA.

[0116] Figure 9 This is a diagram illustrating the illuminance distribution of the final laser beam LSRL. After the laser beam LSR passes through the wedge prism 700, the final laser beam LSRL may include an energy enhancement region EHA in its energy distribution. The energy enhancement region EHA may be a portion of other regions with higher energy density than the final laser beam LSRL.

[0117] The energy-enhanced region EHA may include a first energy-enhanced region EHA1 and a second energy-enhanced region EHA2. The first energy-enhanced region EHA1 may be a region where the energy density is increased by the laser beam LSR passing through the first wedge prism 710, and the second energy-enhanced region EHA2 may be a region where the energy density is increased by the laser beam LSR passing through the second wedge prism 720.

[0118] Regarding the method of forming the energy-enhanced region EHA using the wedge prism 700, it will refer to Figure 10 and Figure 11 This will be discussed later.

[0119] The long-axis Fourier lens 800 can alter the path of the laser beam LSR, enabling the laser beam LSR, which passes through the long-axis homogenizer 320 and diffuses and propagates along the long-axis direction LA, to be focused onto the image plane. In some embodiments, the long-axis Fourier lens 800 may include a cylindrical convex lens, but is not limited thereto.

[0120] The short-axis projection lens 900 can adjust the width of the laser beam LSR passing through the short-axis slit 500 in the short-axis direction SA. The short-axis projection lens 900 can adjust the width in the short-axis direction SA while maintaining the shape of the laser beam LSR passing through the short-axis slit 500.

[0121] The accompanying drawings illustrate the laser beam LSR passing through a long-axis Fourier lens 800 and then a short-axis projection lens 900, but are not limited to this. For example, the order of the long-axis Fourier lens 800 and the short-axis projection lens 900 can be changed. In this case, the laser beam LSR can pass through the short-axis projection lens 900 and then through the long-axis Fourier lens 800.

[0122] The final laser beam LSRL can be incident on the image plane. As described above, the final laser beam LSRL can have a major axis length Dx in the major axis direction LA and a minor axis length Dy in the minor axis direction SA. The final laser beam LSRL may include an energy enhancement region EHA. The image plane can be located on the stage STG.

[0123] The stage (STG) provides a placement space for arranging objects during laser ablation processes. The STG can be located within a chamber (CH). The chamber (CH) provides the internal space for performing the laser ablation process. For example, the chamber (CH) can maintain a vacuum environment and external air barriers, depending on the process requirements.

[0124] The formation of the energy enhancement region EHA of the final laser beam LSRL is explained below.

[0125] Figure 10 This is a schematic diagram illustrating the energy distribution of the final laser beam in a laser stripping apparatus according to a prior art embodiment. Figure 11 This is a schematic diagram showing the energy distribution of the final laser beam in a laser stripping apparatus according to one embodiment.

[0126] Reference Figures 5 to 9 And refer to Figure 10 and Figure 11 The laser ablation device 1 according to the prior art may not include the wedge prism 700. The laser ablation device 1 according to this embodiment may include the wedge prism 700.

[0127] In the laser stripping apparatus 1 according to existing embodiments and this embodiment, the energy distribution shape of the final laser beam LSRL can be a flat-top type in most areas. Because the energy distribution shape of the final laser beam LSRL is flat-top type, uniform energy can be applied to most areas of the object irradiated by the final laser beam.

[0128] Furthermore, in the laser stripping apparatus 1 according to the prior art, excluding the wedge prism 700, the energy distribution of the final laser beam LSRL may not include the energy enhancement region EHA. In the laser stripping apparatus 1 according to this embodiment, the energy distribution of the final laser beam LSRL may include the energy enhancement region EHA.

[0129] In the laser stripping apparatus 1 according to this embodiment, the final laser beam LSRL may include an energy weakening region EWA in its energy distribution. The energy weakening region EWA may be a portion of other regions with lower energy density than the final laser beam LSRL.

[0130] The energy weakening region EWA may include a first energy weakening region EWA1 and a second energy weakening region EWA2. The first energy weakening region EWA1 may be a region where the energy density is reduced by the laser beam LSR passing through the first wedge prism 710, and the second energy weakening region EWA2 may be a region where the energy density is reduced by the laser beam LSR passing through the second wedge prism 720.

[0131] According to the existing embodiment, the final laser beam LSRL of the laser stripping apparatus 1 can have approximately the same energy density in the flat-top region FTA. The flat-top region FTA can be a region with the energy density of the laser beam LSR that does not pass through the wedge prism 700.

[0132] Conversely, in the laser stripping apparatus 1 according to this embodiment, the energy density of the final laser beam LSRL in the energy-enhancing region EHA can be higher than the energy density in the flat-top region FTA, and the energy density of the final laser beam LSRL in the energy-weakening region EWA can be lower than the energy density in the flat-top region FTA.

[0133] For example, the wedge prism 700 refracts the laser beam LSR, which should be incident on the energy-weakening region EWA, and directs it onto the energy-enhancing region EHA, thereby focusing the laser beam LSR through the wedge prism 700 onto the energy-enhancing region EHA. Accordingly, the degree to which the energy density of the energy-enhancing region EHA is greater than the energy density of the flat-top region FTA can be approximately the same as the difference between the energy density in the flat-top region FTA and the energy density in the energy-weakening region EWA.

[0134] The laser stripping apparatus 1 according to this embodiment can use the final laser beam LSRL including the energy enhancement region EHA to perform the laser stripping process, thereby improving the reliability of the laser stripping process.

[0135] The laser stripping process using the final laser beam LSRL, which includes the energy-enhanced region EHA, is described below.

[0136] Figure 12 This is a schematic cross-sectional view illustrating the process of peeling a carrier substrate and a panel substrate using a laser peeling apparatus according to an embodiment.

[0137] Reference Figures 5 to 11 And refer to Figure 12 The carrier substrate CST disposed in the effective region AA can be peeled off by a final laser beam LSRL having the energy density of a flat-top region FTA. As described above, since pixels are disposed in the effective region AA, the effective region AA can be peeled off by a final laser beam LSRL having the energy density of a flat-top region FTA with relatively low energy. Accordingly, the adhesion of the configuration disposed on the first substrate SUB1 can be prevented from weakening, and damage to the aforementioned configuration can be minimized.

[0138] The protruding region A and the boundary region BR can be peeled off by a final laser beam LSRL with an energy density having an energy-enhancing region EHA. As described above, since a barrier layer BL is arranged between the carrier substrate CST and the second substrate SUB2, the protruding region A can be peeled off by the final laser beam LSRL with an energy density having a relatively high energy-enhancing region EHA. Accordingly, by applying sufficient energy to the protruding region A, complete peeling of the carrier substrate CST can be achieved. Consequently, since a separate peeling blade or the like is not used, damage to the first substrate SUB1 can be minimized. Therefore, the reliability of the laser peeling process can be improved.

[0139] The following text explains how the position and energy density of the energy enhancement region EHA are adjusted according to the position of the wedge prism 700.

[0140] Figure 13 This is a schematic diagram showing the movement path of a laser beam in the long axis direction when the wedge prisms according to one embodiment are arranged at different positions in the long axis direction. Figure 14 This is a schematic diagram illustrating the illuminance distribution of a laser beam passing through a short-axis slit according to an embodiment, which exemplarily shows a case where wedge prisms are arranged at different positions relative to each other in the long-axis direction. Figure 15 This is a schematic diagram showing the energy distribution of the final laser beam when the wedge prisms according to one embodiment are arranged at different positions along the long axis.

[0141] Reference Figure 12 And refer to Figures 13 to 15 , Figure 13 This is a diagram showing the movement path of the laser beam LSR along the long axis LA. Figure 14 This is a diagram showing the state in which the wedge prism 700 is moved along the long axis direction LA. Figure 15 This is a diagram showing the change in the shape of the final energy distribution of the laser beam LSRL as the wedge prism 700 is moved along the long axis direction LA.

[0142] like Figure 13 and Figure 14 As shown, when the wedge prism 700 is moved towards the center along the long axis direction LA, as Figure 15 As shown, the positions of the energy enhancement region EHA and the energy weakening region EWA can also be moved towards the center.

[0143] For example, when the first wedge prism 710 and the second wedge prism 720 are moved towards the center along the long axis direction LA and arranged close to each other, the first energy enhancement region EHA1 and the second energy enhancement region EHA2 can also be moved towards the center and arranged close to each other. The first energy weakening region EWA1 and the second energy weakening region EWA2 can also be moved towards the center and arranged close to each other.

[0144] Since the size and position of the effective area AA, the protruding area A, and the boundary area BR are different for each display device DD that is being manufactured, the position of the energy enhancement area EHA also needs to be changed according to the display device DD that is being manufactured.

[0145] According to this embodiment, the laser stripping apparatus 1 can easily adjust the position of the energy-enhancing region EHA by adjusting the position of the wedge prism 700 in the long axis direction LA. Therefore, it is not necessary to replace the wedge prism 700 for each display device DD that is to be manufactured, but the position of the energy-enhancing region EHA can be adjusted by including a separate drive unit to adjust the position of the wedge prism 700 in the long axis direction LA.

[0146] Furthermore, although not shown in the accompanying drawings, the width of the energy-enhancing region EHA can also be adjusted by adjusting the refractive index of the wedge prism 700. For example, the refractive index of the wedge prism 700 can be adjusted by adjusting the angle between the incident and exit surfaces of the wedge prism 700. Therefore, the width of the energy-enhancing region EHA can also be adjusted.

[0147] Figure 16 This is a schematic diagram showing the movement path of a laser beam in the minor axis direction when the wedge prisms according to an embodiment are arranged at different positions in the minor axis direction. Figure 17 This is a schematic diagram illustrating the illuminance distribution of a laser beam passing through a short-axis slit according to an embodiment, which exemplarily shows a case where the wedge prisms are arranged at different positions relative to each other in the short-axis direction. Figure 18 This is a schematic diagram showing the energy distribution of the final laser beam when the wedge prisms according to one embodiment are arranged at different positions relative to each other in the short axis direction.

[0148] Reference Figure 12 And refer to Figures 16 to 18 , Figure 16 This is a diagram showing the movement path of the laser beam LSR in the minor axis direction SA. Figure 17 This is a diagram showing the state in which the wedge prism 700 is moved along the minor axis direction SA. Figure 18 This is a diagram showing the change in the shape of the final energy distribution of the laser beam LSRL when the wedge prism 700 is moved along the minor axis direction SA.

[0149] like Figure 16 and Figure 17 As shown, when the wedge prism 700 is moved towards the edge side in the minor axis direction SA, as Figure 18 As shown, the energy densities of the energy-enhancing region EHA and the energy-weakening region EWA can be different.

[0150] For example, in the accompanying drawings, the case in which the first wedge prism 710 moves toward the edge side in the minor axis direction SA while the second wedge prism 720 does not move is illustrated as an example.

[0151] Before the first wedge prism 710 and the second wedge prism 720 move along the minor axis direction SA, the amount of LSR of the laser beam overlapping with the first wedge prism 710 and the amount of LSR of the laser beam overlapping with the second wedge prism 720 can be the same. Therefore, the amount of LSR of the laser beam refracted by the first wedge prism 710 and the second wedge prism 720 can be the same.

[0152] Accordingly, Figure 18 As shown, the energy density of the first energy-enhancing region EHA1 and the second energy-enhancing region EHA2, formed by the first wedge prism 710 and the second wedge prism 720 respectively, can be greater than the energy density of the flat-top region FTA by a first magnitude H1. The energy density of the first energy-weakening region EWA1 and the second energy-weakening region EWA2, formed by the first wedge prism 710 and the second wedge prism 720 respectively, can be less than the energy density of the flat-top region FTA by a first magnitude H1.

[0153] Conversely, when the first wedge prism 710 moves along its minor axis direction SA, the amount of laser beam LSR overlapping with the first wedge prism 710 can be less than the amount of laser beam LSR overlapping with the second wedge prism 720. Therefore, the amount of laser beam LSR refracted by the first wedge prism 710 can be less than the amount of laser beam LSR refracted by the second wedge prism 720.

[0154] Accordingly, Figure 18As shown, the energy density intensity of the first energy-enhancing region EHA1 formed by the first wedge prism 710 can be greater than the energy density intensity of the flat-top region FTA by a second magnitude H2. The energy density intensity of the first energy-weakening region EWA1 formed by the first wedge prism 710 can be less than the energy density intensity of the flat-top region FTA by a second magnitude H2. The second magnitude H2 can be less than the first magnitude H1.

[0155] Since the transmittance of the effective area AA, protruding area A, and boundary area BR of each display device DD being manufactured is different, the intensity of the energy enhancement area EHA also needs to be changed according to the display device DD.

[0156] According to this embodiment, the laser stripping apparatus 1 adjusts the amount of laser beam LSR overlapping with the wedge prism 700 by adjusting the position of the wedge prism 700 in the minor axis direction SA, thereby easily adjusting the intensity of the energy density of the energy-enhanced region EHA. Therefore, it is not necessary to replace the wedge prism 700 for each display device DD to be manufactured; instead, the intensity of the energy density of the energy-enhanced region EHA can be adjusted by including a separate drive unit to adjust the position of the wedge prism 700 in the minor axis direction SA.

[0157] In the following description, another embodiment of the laser ablation apparatus will be described. In the embodiments described below, configurations identical to those described previously will be indicated by the same reference numerals, and repeated descriptions will be omitted or simplified, with the focus on the differences.

[0158] Figure 19 This is a schematic diagram showing the movement path of the laser beam in the long axis direction of a laser stripping apparatus according to another embodiment. Figure 20 This is a schematic diagram illustrating the energy distribution of the final laser beam in a laser stripping apparatus according to another embodiment.

[0159] Reference Figure 19 and Figure 20 According to this embodiment, the laser ablation device 1 and the reference... Figure 5 The laser stripping apparatus 1 according to one embodiment described above differs in that it also includes a beam cutter (BCT).

[0160] More specifically, the laser stripping apparatus 1 according to this embodiment may further include a beam cutter (BCT). The beam cutter (BCT) may reflect or absorb the laser beam LSR incident on the beam cutter (BCT) to block the path of the laser beam LSR incident on the beam cutter (BCT).

[0161] The beam cutter (BCT) can be located between the wedge prism 700 and the image plane. The beam cutter (BCT) can be arranged to overlap with the path of the laser beam LSR incident on the outer region of the energy enhancement region (EHA).

[0162] In several embodiments, the beam cutter BCT may include a first beam cutter BCT1 and a second beam cutter BCT2. The first beam cutter BCT1 and the second beam cutter BCT2 may be arranged spaced apart from each other in the long axis direction LA. The first beam cutter BCT1 may be arranged on one side of the first wedge prism 710 in the travel direction of the laser beam LSR, and the second beam cutter BCT2 may be arranged on one side of the second wedge prism 720 in the travel direction of the laser beam LSR.

[0163] The final laser beam LSRL can include a beam removal region BCA in its energy distribution. The beam removal region BCA can be the area formed by the laser beam LSRL being blocked by the beam cutter BCT.

[0164] The beam removal region BCA can include a first beam removal region BCA1 and a second beam removal region BCA2. The first beam removal region BCA1 can be the region formed by the laser beam LSR being blocked by the first beam cutter BCT1, and the second beam removal region BCA2 can be the region formed by the laser beam LSR being blocked by the second beam cutter BCT2.

[0165] The beam removal region BCA can be located outside the energy enhancement region EHA. For example, the beam removal region BCA can be located on the opposite side of the flat-top region FTA, separated from the energy enhancement region EHA. The first beam removal region BCA1 can be arranged outside the first energy enhancement region EHA1, and the second beam removal region BCA2 can be arranged outside the second energy enhancement region EHA2.

[0166] The beam removal region (BCA) can have a lower energy density than the energy enhancement region (EHA). For example, the energy density of the final laser beam LSRL in the beam removal region (BCA) can be 0, but it is not limited to this.

[0167] exist Figure 20 The diagram shows a case where the energy density in a portion of the beam removal region BCA is greater than 100, but this is for illustrative purposes only. Figure 15 The embodiments shown are examples of the situation. For example... Figure 15 As shown in the embodiment, in the case where the energy density exists in an unnecessary region outside the energy enhancement region EHA, a beam removal region BCA can be arranged to remove the unnecessary energy density. In this case, the energy density of the beam removal region BCA can be substantially close to zero.

[0168] The laser stripping apparatus 1 according to this embodiment can improve the reliability of the laser stripping process by using a beam cutter (BCT) to attenuate the energy of unnecessary areas.

[0169] The embodiments of this utility model have been described above with reference to the accompanying drawings. However, those skilled in the art to which this utility model pertains will understand that it can be implemented in other specific forms without changing the technical concept or essential features of this utility model. Therefore, it should be understood that the above embodiments are exemplary in all respects and not limiting.

Claims

1. A laser ablation apparatus, comprising a laser ablation apparatus for converting a first beam into a second beam having widths in both the minor and major axes, characterized in that, include: A laser beam generating unit generates the first beam. A homogenizer is used to homogenize the first beam. as well as A wedge prism refracts at least a portion of the first beam of light passing through the homogenizer. The wedge prism is configured to refract at least a portion of the first beam passing through the homogenizer, such that the energy density of the second beam incident on the second region of the image plane is greater than the energy density of the second beam incident on the first region of the image plane.

2. The laser ablation device according to claim 1, characterized in that, The wedge prism includes a first wedge prism and a second wedge prism arranged at intervals from each other along the long axis.

3. The laser ablation device according to claim 1, characterized in that, The wedge prism is further configured to refract at least a portion of the first beam passing through the homogenizer, such that the energy density of the second beam incident on the third region of the image plane is less than the energy density of the second beam incident on the first region of the image plane. The second region is located between the first region and the third region.

4. The laser ablation device according to claim 1, characterized in that, The energy density of the second beam incident on the second region is determined based on the area of ​​the region where the first beam incident on the wedge prism overlaps with the wedge prism.

5. The laser ablation device according to claim 1, characterized in that, Also includes: A telescope lens is arranged between the laser beam generating unit and the homogenizer, and transmits the first beam at a magnification or the same magnification.

6. The laser ablation device according to claim 5, characterized in that, Also includes: A short-axis slit is arranged between the homogenizer and the wedge prism, and allows a portion of the first beam to be transmitted in the short-axis direction.

7. The laser ablation device according to claim 6, characterized in that, Also includes: A short-axis Fourier lens is arranged between the homogenizer and the short-axis slit, and focuses the first beam of light transmitted through the telescope lens onto the short-axis slit along the short-axis direction.

8. The laser ablation device according to claim 6, characterized in that, Also includes: A long-axis Fourier lens is arranged between the wedge prism and the image plane into which the second beam is incident, and focuses the first beam transmitted through the telescope lens onto the image plane.

9. The laser ablation device according to claim 6, characterized in that, Also includes: A short-axis projection lens is arranged between the wedge prism and the image plane into which the second beam is incident, and adjusts the width of the first beam passing through the short-axis slit in the short-axis direction.

10. The laser ablation apparatus according to claim 1, characterized in that, Also includes: A beam cutter is disposed between the wedge prism and the image plane and blocks the path of the first beam incident on the outer region of the second region.

Images