Machining device and machine tool

Abstract

The utility model provides a processing device which is at least used for processing a crystal silicon wafer and comprises a main body, a first monitoring assembly and a control assembly. Wherein a machining table and a machining assembly are arranged on the main body, the machining table can rotate in the axis direction of the machining table, the machining table is used for installing a crystal silicon wafer, the machining assembly is arranged at the top of the machining table, the machining assembly can move in the height direction of the main body relative to the machining table, and the machining assembly is used for abutting against and polishing the crystal silicon wafer. The first monitoring assembly is used for monitoring the surface roughness of the machining face of the crystal silicon wafer, and when the first monitoring assembly monitors that the surface roughness of the crystal silicon wafer is higher than a first preset value, the first monitoring assembly releases a first electric signal. The control assembly is used for receiving the first electric signal and at least controlling the machining assembly to descend in the height direction of the body or controlling the machining table to increase the rotating speed according to the first electric signal. According to the processing device, the problem that the surface roughness of the crystal silicon wafer processed by the processing device is relatively high is solved.

Description

Technical Field

[0001] This disclosure relates to the field of processing technology, and in particular to a processing apparatus and machine tool. Background Technology

[0002] Existing silicon wafer processing equipment, such as the single-crystal silicon wafer grinding processing equipment disclosed in Chinese patent CN117340711B, does not take into account the control of the surface flatness of the silicon wafer during processing. This results in a high surface roughness of the silicon wafer processed by the equipment, which in turn affects the quality and reliability of the silicon wafer. Utility Model Content

[0003] One of the technical problems to be solved by this disclosure is the high surface roughness of silicon wafers processed by silicon wafer processing equipment.

[0004] To address the aforementioned technical problems, this disclosure provides a processing apparatus for at least processing silicon wafers, the processing apparatus comprising:

[0005] The main body is equipped with a processing table and processing components. The processing table can rotate along its own axis and is used to install silicon wafers. The processing components are located on the top of the processing table and can move relative to the processing table along the height of the main body. The processing components are used to stop and polish the silicon wafers.

[0006] A first monitoring component, disposed on the main body, is used to monitor the surface roughness of the processed surface of the silicon wafer. When the first monitoring component detects that the surface roughness of the silicon wafer is higher than a first predetermined value, the first monitoring component releases a first electrical signal; and,

[0007] The control component is connected to the main body and is electrically connected to the monitoring component, the processing table, and the processing component. The control component is used to receive a first electrical signal and, based on the first electrical signal, control the processing component to descend along the height direction of the main body or control the processing table to increase its rotation speed.

[0008] In some embodiments, the processing component includes:

[0009] A rotating shaft is located on the top of the processing table. The rotating shaft extends along the height direction of the main body and can rotate along its own axis.

[0010] The grinding disc is detachably connected to the bottom end of the rotating shaft, and a first polishing pad is fixedly installed on the bottom surface of the grinding disc.

[0011] In some embodiments, the processing assembly further includes a first driving member, which is disposed on the main body and connected to a rotating shaft. The first driving member drives the rotating shaft to reciprocate along the height direction of the main body, and is electrically connected to a control assembly.

[0012] When the control component receives the first electrical signal, the control component controls the first driving component to drive the rotating shaft to descend along the height direction of the main body.

[0013] In some embodiments, the processing table includes:

[0014] The second driving component is mounted on the main body and is electrically connected to the control component.

[0015] A support platform is mounted on a second driving component, which drives the support platform to rotate along its own axis.

[0016] When the control component receives the first electrical signal, it controls the second drive component to increase the rotation speed of the support platform.

[0017] In some embodiments, a second polishing pad is fixedly disposed on the upper surface of the support platform.

[0018] In some embodiments, the processing apparatus further includes a second monitoring component disposed on the processing table, and a control component electrically connected to the second monitoring component. The second monitoring component is used to monitor the temperature of the processing table. When the second monitoring component detects that the temperature of the processing table is higher than a second predetermined value, the second monitoring component releases a second electrical signal.

[0019] The processing apparatus also includes a cooling mechanism, which is used at least to cool the processing table, and the cooling mechanism is electrically connected to the control components;

[0020] When the control component receives the second electrical signal, it controls and reduces the temperature of the refrigerant in the cooling mechanism and / or increases the flow rate of the refrigerant in the cooling mechanism.

[0021] In some embodiments, the cooling mechanism includes a cooling pipe, a temperature regulator, and a flow controller. The cooling pipe extends at least to the processing table, and the temperature regulator and flow controller are disposed on the cooling pipe and electrically connected to the control component, respectively.

[0022] The processing table is equipped with a cooling channel, which is connected to a cooling pipe.

[0023] When the control component receives the second electrical signal, it controls at least the temperature regulator to lower the temperature of the refrigerant in the cooling pipe or the flow controller to increase the flow rate of the refrigerant in the cooling pipe.

[0024] In some embodiments, the processing apparatus further includes a partition plate detachably disposed around the outer periphery of the processing table for stopping the silicon wafers.

[0025] In some embodiments, the first monitoring component includes:

[0026] A laser scanner, mounted on the processing assembly, is used to measure the surface roughness of a silicon wafer and convert the surface roughness of the silicon wafer into a digital signal.

[0027] A data comparator is mounted on the main body and is electrically connected to the laser scanner and the control component. The data comparator is used to compare the magnitude of the digital signal with a first predetermined value.

[0028] Specifically, when the digital signal is greater than a first predetermined value, the data comparator sends a first electrical signal to the control component.

[0029] On the other hand, this application also provides a machine tool that includes the aforementioned processing apparatus.

[0030] Through the above technical solution, the processing apparatus and machine tool of this application, compared with the prior art, are improved by incorporating a first monitoring component and a control component. The first monitoring component monitors the surface roughness of the processed silicon wafer in real time. When the surface roughness of the processed silicon wafer exceeds a predetermined threshold, the first monitoring component releases a first electrical signal. Subsequently, the control component receives the first electrical signal and, based on the signal, controls the processing component to descend along the height direction of the main body, controls the processing table to increase its rotation speed, or simultaneously controls the processing component to descend along the height direction of the main body and controls the processing table to increase its rotation speed, so that the surface roughness of the silicon wafer is below the predetermined threshold, thereby ensuring that the product quality of the silicon wafer meets the requirements and avoiding a large number of substandard products after processing. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 This is a schematic diagram of the processing apparatus disclosed in the embodiments of this disclosure;

[0033] Figure 2 This is a schematic diagram of the electrical connections between some structures of the processing apparatus disclosed in the embodiments of this disclosure;

[0034] Figure 3This is a schematic diagram of the electrical connections between other parts of the processing apparatus disclosed in this embodiment;

[0035] Figure 4 This is a schematic diagram of the electrical connections of the first monitoring component disclosed herein.

[0036] Explanation of reference numerals in the attached figures:

[0037] 1. Main body; 2. Processing table; 3. Support platform; 4. Second drive component; 5. Processing assembly; 6. Rotating shaft; 7. Grinding disc; 8. First drive component; 9. First monitoring assembly; 10. Second monitoring assembly; 11. First polishing pad; 12. Second polishing pad; 13. Silicon wafer; 14. Control assembly; 15. Temperature regulator; 16. Flow controller; 17. Cooling pipe; 18. Laser scanner; 19. Data comparator. Detailed Implementation

[0038] The embodiments of this disclosure will be further described in detail below with reference to the accompanying drawings and examples. The detailed description of the embodiments and the accompanying drawings are used to illustrate the principles of this disclosure by way of example, but should not be used to limit the scope of this disclosure. This disclosure can be implemented in many different forms and is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

[0039] These embodiments are provided to make the disclosure thorough and complete, and to fully express the scope of the disclosure to those skilled in the art. It should be noted that, unless otherwise specifically stated, the relative arrangement of components and steps, material composition, numerical expressions, and values ​​set forth in these embodiments should be interpreted as exemplary only and not as limiting.

[0040] It should be noted that, in the description of this disclosure, unless otherwise stated, "a plurality of" means two or more; the terms "upper," "lower," "left," "right," "inner," and "outer," etc., indicating orientation or positional relationship, are only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this disclosure. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0041] Furthermore, the terms "first," "second," and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different parts. "Vertical" is not strictly vertical, but within the permissible margin of error. "Parallel" is not strictly parallel, but within the permissible margin of error. Terms such as "including" or "contains" mean that the element preceding the word encompasses the element listed after the word, and do not exclude the possibility of encompassing other elements as well.

[0042] It should also be noted that, in the description of this disclosure, unless otherwise expressly specified and limited, the terms "installed," "connected," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this disclosure depending on the specific circumstances. When a particular device is described as being located between a first device and a second device, an intermediary device may or may not be present between the particular device and the first or second device.

[0043] All terms used in this disclosure have the same meaning as understood by one of ordinary skill in the art to which this disclosure pertains, unless otherwise specifically defined. It should also be understood that terms defined in general dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant art, and not as idealized or highly formalized, unless expressly defined herein.

[0044] Techniques, methods, and equipment known to those skilled in the art may not be discussed in detail, but where appropriate, they should be considered part of the specification.

[0045] See appendix Figure 1 To be continued Figure 4 As shown, this application discloses a processing apparatus for at least processing silicon wafers 13. The processing apparatus includes a main body 1, a first monitoring component 9, and a control component 14.

[0046] The main body 1 is equipped with a processing table 2 and a processing assembly 5. The processing table 2 can rotate along its own axis and is used to mount silicon wafers 13. The processing assembly 5 is located on top of the processing table 2 and can rotate relative to the processing table 2 along the height direction of the main body 1 (as shown in the attached figure). Figure 1 The processing component 5 moves in the Z-direction and is used to stop and polish the silicon wafer 13. A first monitoring component 9 is disposed on the main body 1 and is used to monitor the surface roughness of the processed surface of the silicon wafer 13. When the first monitoring component 9 detects that the surface roughness of the silicon wafer 13 is higher than a first predetermined value, the first monitoring component 9 releases a first electrical signal. A control component 14 is connected to the main body 1 and is electrically connected to the monitoring component, the processing table 2, and the processing component 5. The control component 14 receives the first electrical signal and, based on the first electrical signal, controls at least the processing component 5 to descend along the height direction of the main body 1 or controls the processing table 2 to increase its rotation speed.

[0047] Specifically, when polishing the silicon wafer 13, the silicon wafer 13 is first mounted on the processing table 2. Then, the processing component 5 is moved so that it abuts against the silicon wafer 13, and the processing table 2 is started. The processing table 2 drives the silicon wafer 13 to rotate, thus polishing under the action of the processing component 5. It can be understood that during polishing, the surface roughness of the silicon wafer 13 is affected by both the pressure applied to the silicon wafer 13 by the processing component 5 and the rotation speed of the processing table 2. That is to say, when the processing component 5 applies greater pressure to the silicon wafer 13, the surface roughness of the silicon wafer 13 after processing will be lower, and the faster the rotation speed of the processing table 2, the lower the surface roughness of the silicon wafer 13 after processing.

[0048] Therefore, compared with the prior art, this embodiment has a first monitoring component 9 and a control component 14 on the processing apparatus. The first monitoring component 9 is used to monitor the surface roughness of the processed surface of the silicon wafer 13 in real time. When the surface roughness of the processed surface of the silicon wafer 13 is higher than a predetermined threshold, the first monitoring component releases a first electrical signal. Then, the control component 14 receives the first electrical signal and, based on the first electrical signal, controls the processing component 5 to descend along the height direction of the main body 1, controls the processing table 2 to increase its rotation speed, or simultaneously controls the processing component 5 to descend along the height direction of the main body 1 and controls the processing table 2 to increase its rotation speed, thereby ensuring that the surface roughness of the silicon wafer 13 is below the predetermined threshold, so that the product quality of the silicon wafer 13 meets the requirements and avoids a large number of defective products after processing. It should be noted that the processing apparatus of this application is not limited to use on silicon wafers 13, but can also be used for processing, for example, glass and metal plates. Furthermore, the first predetermined value is a set value; that is, the processed silicon wafer 13 is considered to meet product quality only when the surface roughness of the silicon wafer 13 is lower than the first predetermined value.

[0049] In some embodiments, the processing assembly 5 includes a rotating shaft 6 and a grinding disc 7. The rotating shaft 6 is disposed on the top of the processing table 2, extends along the height direction of the main body 1, and is rotatable along its own axis. The grinding disc 7 is detachably connected to the bottom end of the rotating shaft 6, and a first polishing pad 11 is fixedly disposed on the bottom surface of the grinding disc 7.

[0050] Specifically, when polishing the silicon wafer 13, the grinding disc 7 and the first polishing pad 11 abut against the silicon wafer 13. After the rotating shaft 6 rotates, it drives the grinding disc 7 to rotate, thereby causing the first polishing pad 11 to polish the surface of the silicon wafer 13. It is worth mentioning that in some embodiments, the grinding disc 7 includes multiple models. Some models of the grinding disc 7 do not have the first polishing pad 11 on the bottom surface. When this model of grinding disc 7 is used to polish the silicon wafer 13, the polishing is mainly used to thin the silicon wafer 13.

[0051] In some embodiments, the processing component 5 further includes a first driving member 8, which is disposed on the main body 1 and connected to the rotating shaft 6. The first driving member 8 drives the rotating shaft 6 to reciprocate along the height direction of the main body 1. The first driving member 8 is electrically connected to the control component 14. When the control component 14 receives a first electrical signal, the control component 14 controls the first driving member 8 to drive the rotating shaft 6 to descend along the height direction of the main body 1.

[0052] Specifically, in this embodiment, the first driving component 8 can be a cylinder or a linear motor. The driving end of the first driving component 8 is connected to the rotating shaft 6. After receiving the control signal from the control component 14, the first driving component 8 drives the rotating shaft 6 to descend along the height direction of the main body 1, thereby increasing the pressure applied by the grinding disc 7 to the silicon wafer 13, so as to reduce the surface roughness of the silicon wafer 13 after grinding.

[0053] In some embodiments, the processing table 2 includes a second driving member 4 and a support platform 3. The second driving member 4 is disposed on the main body 1 and is electrically connected to the control component 14. The support platform 3 is disposed on the second driving member 4, and the second driving member 4 is used to drive the support platform 3 to rotate along its own axis. When the control component 14 receives a first electrical signal, the control component 14 controls the second driving member 4 to increase the rotation speed of the support platform 3.

[0054] In this embodiment, the silicon wafer 13 is mounted on the support platform 3. The second driving component 4 includes a motor connected to the support platform 3, which drives the support platform 3 to rotate. After receiving a control signal from the control component 14, the motor speed increases, thereby increasing the rotational speed of the support platform 3. In this embodiment, the support platform 3 is a circular support stage that matches the silicon wafer 13.

[0055] Understandably, in actual operation, after receiving the first electrical signal released by the first monitoring component 9, the control component 14 will only release control signals to the first driving component 8 or the second driving component 4, and will not control the first driving component 8 and the second driving component 4 to work simultaneously.

[0056] In some embodiments, a second polishing pad 12 is fixedly disposed on the upper surface of the support platform 3.

[0057] Specifically, when the second polishing pad 12 is fixedly mounted on the upper surface of the support platform 3, since the grinding disc 7 is detachably connected to the support shaft, if it is necessary to polish the lower surface of the silicon wafer 13, the grinding disc 7 is not installed at this time. Then, the rotating shaft 6 is driven to abut against the silicon wafer 13, and the support platform 3 is started to rotate. The rotation of the support platform 3 drives the second polishing pad 12 to rotate, thereby allowing the second polishing pad 12 to polish the lower surface of the silicon wafer 13. If the first monitoring component 9 is a laser scanner 18, the laser scanner 18 emits a laser beam that passes through the silicon wafer 13 and reaches the lower surface of the silicon wafer 13. The surface roughness of the lower surface of the silicon wafer 13 can be determined by the beam reflected back to the laser scanner 18. Furthermore, when the grinding disc 7 is mounted on the rotating shaft 6, the rotating shaft 6 and the support platform 3 rotate simultaneously. The processing device can polish both the upper and lower surfaces of the silicon wafer 13 simultaneously. The laser scanner 18 can monitor the surface roughness of the upper and lower surfaces of the silicon wafer 13 by emitting light at different angles.

[0058] It should be noted that when polishing the silicon wafer 13 using the first polishing pad 11 and the second polishing pad 12, polishing liquid needs to be applied to the upper and lower surfaces of the silicon wafer 13 to improve the polishing effect. In this embodiment, the first polishing pad 11 and the second polishing pad can be non-woven polishing pads or polyurethane polishing pads.

[0059] In some embodiments, the processing apparatus further includes a second monitoring component 10 disposed on the processing table 2, and a control component 14 electrically connected to the second monitoring component 10. The second monitoring component 10 is used to monitor the temperature of the processing table 2. When the second monitoring component 10 detects that the temperature of the processing table 2 is higher than a second predetermined value, the second monitoring component 10 releases a second electrical signal. The processing apparatus further includes a cooling mechanism, which is used at least to cool the processing table 2. The cooling mechanism is electrically connected to the control component 14. When the control component 14 receives the second electrical signal, the control component 14 controls and reduces the temperature of the refrigerant in the cooling mechanism and / or increases the flow rate of the refrigerant in the cooling mechanism.

[0060] Specifically, during polishing, friction occurs between the processing table 2 and the silicon wafer 13. When the processing table 2 operates for extended periods, its temperature can become excessively high, potentially causing deformation and ultimately resulting in the processed silicon wafer 13 failing to meet quality requirements. Therefore, in this embodiment, a cooling mechanism is provided on the processing table 2 to cool it. Furthermore, a second monitoring component 10 is installed on the processing table 2. This component monitors the temperature of the processing table 2, and when the temperature exceeds a second predetermined value, a control component 14 releases a second electrical signal. The control component 14 then controls the cooling mechanism to either lower the refrigerant temperature, increase the refrigerant flow rate, or both increase the refrigerant flow rate and lower the refrigerant temperature, thereby improving the cooling effect of the cooling mechanism on the processing table 2 and preventing deformation due to heat. In this embodiment, the second monitoring component 10 is a temperature sensor. The second predetermined value is usually the critical temperature for material deformation. For example, when the processing table is made of steel casting, the second predetermined value is 250°C, and when the processing table is made of copper casting, the second predetermined value is 500°C.

[0061] In some embodiments, the cooling mechanism includes a cooling pipe 17, a temperature regulator 15, and a flow controller 16. The cooling pipe 17 extends at least to the processing table 2. The temperature regulator 15 and the flow controller 16 are disposed on the cooling pipe 17 and are electrically connected to the control component 14, respectively. A cooling channel is provided on the processing table 2, and the cooling channel communicates with the cooling pipe 17. When the control component 14 receives a second electrical signal, the control component 14 controls the temperature regulator 15 to reduce the temperature of the refrigerant in the cooling pipe 17 or the flow controller 16 to increase the flow rate of the refrigerant in the cooling pipe 17.

[0062] Specifically, the temperature regulator 15 is used to regulate the temperature of the refrigerant in the cooling pipe 17, and the flow controller 16 is used to control the flow rate of the refrigerant in the cooling pipe 17. When the control component 14 receives the second electrical signal, that is, when the temperature on the processing table 2 exceeds the second predetermined value, the control component 14 sends a control signal to at least the temperature regulator 15 or the flow controller 16, so that the temperature regulator 15 lowers the temperature of the refrigerant in the cooling channel or controls the flow controller 16 to increase the flow rate of the refrigerant in the cooling pipe 17.

[0063] In some embodiments, the processing apparatus further includes a surrounding plate that is detachably disposed around the outer periphery of the processing table 2 for use in stopping the silicon wafer 13.

[0064] In actual operation, the silicon wafer 13 is first installed on the processing table 2. Then, the first driving component 8 is controlled to drive the grinding disc 7 to abut against the silicon wafer 13. After that, the surrounding plate is installed on the outer periphery of the processing table 2 to protect the silicon wafer 13 and prevent it from falling off the processing table 2 due to friction during processing, which would cause damage to the silicon wafer 13. Then, the second driving component 4 is activated to make the processing table 2 rotate and / or to activate the rotating shaft 6 to grind the silicon wafer 13.

[0065] In some embodiments, the first monitoring component 9 includes a laser scanner 18 and a data comparator 19. The laser scanner 18 is disposed on the processing component 5 and is used to measure the surface roughness of the silicon wafer 13 and convert the surface roughness of the silicon wafer 13 into a digital signal. The data comparator 19 is disposed on the main body 1 and is electrically connected to both the laser scanner 18 and the control component 14. The data comparator 19 is used to compare the digital signal with a first predetermined value. When the digital signal is greater than the first predetermined value, the data comparator 19 sends a first electrical signal to the control component 14.

[0066] Specifically, in this embodiment, the processing component 5 can also move freely in a plane parallel to the upper surface of the processing table 2. The laser scanner 18 is mounted on the processing component 5, so that the laser scanner 18 can move with the processing component 5 to monitor the silicon wafer 13. In actual operation, the laser scanner 18 sends the monitored surface roughness data to the data comparator 19. The data comparator 19 converts the surface roughness into a digital signal, and then compares the digital signal with a first predetermined value. If the digital signal is lower than the first predetermined value, the data comparator 19 does not send a first electrical signal to the control component 14; if the digital signal is higher than the first predetermined value, the data comparator 19 sends a first electrical signal to the control component 14.

[0067] On the other hand, this application also discloses a machine tool that includes the processing apparatus in the above embodiments. Therefore, this machine tool includes all the technical effects of the processing apparatus in the above embodiments. Since the technical effects of the crossbeam have already been described in detail above, they will not be repeated here.

[0068] In summary, the processing apparatus and machine tool of this application include a first monitoring component 9 for real-time monitoring of the silicon wafer 13, and a control component 14 electrically connected to the first monitoring component 9. When the first monitoring component 9 detects that the surface roughness of the silicon wafer 13 is too high, the first monitoring component 9 sends a first electrical signal to the control component 14. Subsequently, the control component 14 controls the processing component 5 to descend along the height direction or controls the processing table 2 to increase its rotation speed, thereby ensuring that the surface roughness of the silicon wafer 13 meets the requirements after polishing. On the other hand, the grinding disc 7 of the processing apparatus is provided with a first polishing pad 11, the support platform 3 is provided with a second polishing pad 12, and the rotating shaft 6 can rotate along its own axial direction. Through the rotation of the first polishing pad 11, the second polishing pad 12, the support platform 3, and the rotating shaft 6, the upper and lower surfaces of the silicon wafer 13 can be polished simultaneously. In addition, the processing apparatus of this application is provided with a second monitoring component 10 and a cooling mechanism. The second monitoring component 10 monitors the temperature of the processing table 2 at all times, and reduces the temperature of the refrigerant in the cooling mechanism or increases the flow rate of the refrigerant in the cooling mechanism according to the second signal, thereby avoiding the deformation caused by the excessive temperature of the processing table 2.

[0069] The embodiments of this disclosure have now been described in detail. To avoid obscuring the concept of this disclosure, some details known in the art have not been described. Those skilled in the art can fully understand how to implement the technical solutions disclosed herein based on the above description.

[0070] While specific embodiments of this disclosure have been described in detail by way of examples, those skilled in the art should understand that the examples are for illustrative purposes only and not intended to limit the scope of this disclosure. Those skilled in the art should understand that modifications can be made to the above embodiments or equivalent substitutions can be made to some technical features without departing from the scope and spirit of this disclosure. In particular, as long as there is no structural conflict, the technical features mentioned in the various embodiments can be combined in any manner.

Claims

1. A processing apparatus, said processing apparatus being used at least for processing silicon wafers (13), characterized in that, include: The main body (1) is provided with a processing table (2) and a processing component (5). The processing table (2) can rotate along its own axis. The processing table (2) is used to install the silicon wafer (13). The processing component (5) is located on the top of the processing table (2). The processing component (5) can move relative to the processing table (2) along the height direction of the main body (1). The processing component (5) is used to stop and polish the silicon wafer (13). A first monitoring component (9) is disposed on the main body (1). The first monitoring component (9) is used to monitor the surface roughness of the processed surface of the silicon wafer (13). When the first monitoring component (9) detects that the surface roughness of the silicon wafer (13) is higher than a first predetermined value, the first monitoring component (9) releases a first electrical signal; and, A control component (14) is connected to the main body (1). The control component (14) is electrically connected to the monitoring component, the processing table (2), and the processing component (5). The control component (14) is used to receive the first electrical signal and, based on the first electrical signal, control the processing component (5) to descend along the height direction of the main body (1) or control the processing table (2) to increase its rotation speed.

2. The processing apparatus according to claim 1, characterized in that, The processing component (5) includes: A rotating shaft (6) is provided on the top of the processing table (2). The rotating shaft (6) extends along the height direction of the main body (1) and can rotate along its own axis. Grinding disc (7), which is detachably connected to the bottom end of the rotating shaft (6), and a first polishing pad (11) is fixedly provided on the bottom surface of the grinding disc (7).

3. The processing apparatus according to claim 2, characterized in that, The processing component (5) further includes a first driving member (8), which is disposed on the main body (1). The first driving member (8) is connected to the rotating shaft (6). The first driving member (8) drives the rotating shaft (6) to reciprocate along the height direction of the main body (1). The first driving member (8) is electrically connected to the control component (14). When the control component (14) receives the first electrical signal, the control component (14) controls the first drive member (8) to drive the rotating shaft (6) to descend along the height direction of the main body (1).

4. The processing apparatus according to claim 1, characterized in that, The processing table (2) includes: The second driving member (4) is disposed on the main body (1) and is electrically connected to the control component (14); A support platform (3) is mounted on the second driving member (4), and the second driving member (4) is used to drive the support platform (3) to rotate along its own axis. When the control component (14) receives the first electrical signal, the control component (14) controls the second drive component (4) to increase the rotation speed of the support platform (3).

5. The processing apparatus according to claim 4, characterized in that, A second polishing pad (12) is fixedly disposed on the upper surface of the support platform (3).

6. The processing apparatus according to any one of claims 1 to 5, characterized in that, The processing device further includes a second monitoring component (10), which is disposed on the processing table (2). The control component (14) is electrically connected to the second monitoring component (10). The second monitoring component (10) is used to monitor the temperature of the processing table (2). When the second monitoring component (10) detects that the temperature of the processing table (2) is higher than a second predetermined value, the second monitoring component (10) releases a second electrical signal. The processing device further includes a cooling mechanism, which is used at least to cool the processing table (2), and the cooling mechanism is electrically connected to the control component (14); When the control component (14) receives the second electrical signal, the control component (14) controls and reduces the temperature of the refrigerant in the cooling mechanism and / or increases the flow rate of the refrigerant in the cooling mechanism.

7. The processing apparatus according to claim 6, characterized in that, The cooling mechanism includes a cooling pipe (17), a temperature regulator (15), and a flow controller (16). The cooling pipe (17) extends at least to the processing table (2). The temperature regulator (15) and the flow controller (16) are disposed on the cooling pipe (17). The temperature regulator (15) and the flow controller (16) are electrically connected to the control component (14). The processing table (2) is provided with a cooling channel, which is connected to the cooling pipe (17); When the control component (14) receives the second electrical signal, the control component (14) controls at least the temperature regulator (15) to reduce the temperature of the refrigerant in the cooling pipe (17) or the flow controller (16) to increase the flow rate of the refrigerant in the cooling pipe (17).

8. The processing apparatus according to any one of claims 1 to 5, characterized in that, The processing device also includes a surrounding plate, which is detachably mounted around the outer periphery of the processing table (2) to stop the silicon wafer (13).

9. The processing apparatus according to any one of claims 1 to 5, characterized in that, The first monitoring component (9) includes: A laser scanner (18) is disposed on the processing assembly (5). The laser scanner (18) is used to measure the surface roughness of the silicon wafer (13) and convert the surface roughness of the silicon wafer (13) into a digital signal. A data comparator (19) is disposed on the main body (1). The data comparator (19) is electrically connected to the laser scanner (18) and the control component (14) respectively. The data comparator (19) is used to compare the digital signal with the first predetermined value. When the digital signal is greater than the first predetermined value, the data comparator (19) sends a first electrical signal to the control component (14).

10. A machine tool, characterized in that, The machine tool includes the processing apparatus according to any one of claims 1 to 9.

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