Small-period high-precision optical fiber array substrate

Abstract

The utility model provides a small-period high-precision optical fiber array substrate, which relates to the field of communication and comprises two groups of substrates which are oppositely arranged and are used for fixing optical fibers; the deep etching silicon holes are formed in the substrate, the number of the deep etching silicon holes is multiple, and the deep etching silicon holes are arranged in sequence; and the back pyramid-shaped slot is formed between the two groups of substrates and is used for guiding the optical fiber into the deep etching silicon hole. The utility model provides a small-period high-precision optical fiber array substrate, and provides an optical fiber array substrate which is small in spacing error and flexible in design in one-dimensional and two-dimensional directions, and a high-precision optical fiber array can be conveniently formed.

Description

Technical Field

[0001] This utility model relates to the field of communications, specifically to a small-period high-precision fiber optic array substrate. Background Technology

[0002] Integrated planar waveguide chips can combine multiple optical functions into a single chip, with high integration, small size, and low cost, and are widely used in the field of optical devices. When such chips are made into optical devices, optical connections are required. The common method is to use fiber arrays to couple and align with the integrated chip to achieve optical path connection. In order to ensure the precise positioning of the fiber, when conventionally manufacturing fiber arrays, multiple fibers need to be arranged in parallel on a substrate with a V-groove that has fiber positioning function. Then, a flat cover plate is used to clamp and fix the fiber in the V-groove. Adhesive is used to fix the cover plate and the substrate. Finally, the end face of the fiber array with the fixed fiber is sliced ​​or polished to achieve close contact coupling and bonding with the integrated chip waveguide.

[0003] With the development of all-optical network technology, there is a demand for variable period and two-dimensional arrangement of fiber arrays. Conventional silicon V-grooves are arranged in one dimension. The period and fiber height can be finely adjusted by changing the size and position of the slots, but ensuring accuracy becomes very difficult.

[0004] High-precision two-dimensional fiber optic aperture plates can be achieved using silicon deep etching technology. However, it is limited by photolithography resolution. When the fiber array period and fiber diameter are close, conventional circular aperture photolithography is not feasible due to limitations in photolithography capabilities. For example, for a 125-micrometer diameter fiber with a period of 127 micrometers, if a simple 125-micrometer fiber aperture arrangement is used, the spacing between the apertures is only 2 μm, making photolithography and deep silicon etching infeasible. This structure also has the problem that when the fiber is inserted, the 2-micrometer sidewall of silicon cannot withstand the force and breaks, resulting in particles scratching the fiber. Utility Model Content

[0005] This invention provides a small-period, high-precision fiber array substrate, which offers a fiber array substrate with small spacing error and flexible design in one-dimensional and two-dimensional directions, making it easy to form a high-precision fiber array.

[0006] To solve the above-mentioned technical problems, the technical solution of this utility model is as follows:

[0007] An embodiment of this utility model provides a small-period high-precision fiber array substrate, comprising:

[0008] The substrate has two sets arranged opposite to each other for fixing optical fibers;

[0009] Deeply etched silicon vias are formed on the substrate, and there are several deeply etched silicon vias arranged in sequence;

[0010] A pyramidal slot on the back is formed between the two sets of substrates to guide optical fibers into deep-etched silicon vias.

[0011] Furthermore, the substrate is a silicon wafer, each silicon wafer has a (100) face and a thickness greater than 0.6 mm.

[0012] Furthermore, the substrate is made of two or more layers of silicon wafers, and the deep etched silicon vias on each layer of silicon wafers are aligned and stacked to form a fiber array structure.

[0013] Furthermore, the deep silicon etched vias are multiple deep silicon etched vias formed on a silicon wafer using deep silicon etching technology, and the deep silicon etched vias are trapezoidal with edges tangent to the diameter of the optical fiber.

[0014] Furthermore, the deep-etched silicon vias are octagonal.

[0015] Furthermore, the deeply etched silicon vias are circular.

[0016] Furthermore, when the fiber spacing is close to or less than the fiber diameter, a connecting groove is provided between adjacent deep-etched silicon vias.

[0017] Furthermore, the pyramidal groove on the back is a chamfer formed by back grooving and etching processes, used for the introduction of optical fibers.

[0018] Furthermore, the pyramid-shaped slot on the back is a single layer.

[0019] Furthermore, the pyramid-shaped slot on the back is double-layered.

[0020] The above-described solution of this utility model has at least the following beneficial effects:

[0021] The small-period high-precision fiber array substrate described in this invention utilizes the high precision of a photolithography mask to ensure the positional accuracy of the fiber apertures. Currently, the precision of photolithography masks can reach the nanometer level, posing no technical difficulty for requirements of less than 0.3 micrometers. Compared to adjusting the opening size of silicon V-grooves, once the mask is fixed, process fluctuations can be avoided. For small-period fiber arrays, such as 125-micrometer fibers with a period of 127 micrometers, the apertures are connected by slots, with only some positions tangent to the fiber. This satisfies the requirement of fixing the fiber position while avoiding the difficulties of 2-micrometer photolithography etching. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the structure of Embodiment 1 of the small-period high-precision fiber array substrate of this utility model;

[0023] Figure 2 This is Embodiment 1 of the small-period high-precision fiber array substrate of this utility model. Figure 1 Side sectional view;

[0024] Figure 3 This is a schematic diagram of the structure of Embodiment 2 of the small-period high-precision fiber array substrate of this utility model;

[0025] Figure 4 This is Embodiment 2 of the small-period high-precision fiber array substrate of this utility model. Figure 3 Side sectional view.

[0026] Explanation of reference numerals in the attached figures:

[0027] 1. Substrate; 2. Deeply etched silicon vias; 3. Pyramid-shaped groove on the back side. Detailed Implementation

[0028] Exemplary embodiments of the present invention will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this invention will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0029] like Figures 1 to 2 As shown, Embodiment 1 of this utility model provides a small-period high-precision fiber array substrate, comprising:

[0030] Substrate 1 has two sets arranged opposite to each other for fixing optical fibers;

[0031] Deeply etched silicon vias 2 are formed on the substrate 1, and there are a plurality of deeply etched silicon vias 2 arranged in sequence;

[0032] A pyramidal groove 3 is formed on the back side between the two sets of substrates 1 to guide optical fibers into the deep-etched silicon vias 2.

[0033] In this embodiment of the invention, substrate 1 serves as the supporting structure for the entire fiber optic array substrate, providing a stable physical foundation for fixing the optical fibers. The design of substrate 1 takes into account the high precision requirements of the fiber optic array, employing two sets arranged opposite each other, which helps ensure precise positioning and fixing of the optical fibers. This enhances the stability and reliability of the fiber optic array, improves the accuracy of fiber positioning, and lays the foundation for the high performance of the entire fiber optic array. Deeply etched silicon vias 2 are the space for accommodating the optical fibers in the fiber optic array. By opening several sequentially arranged deep etched silicon vias on the substrate, precise positioning and guidance can be provided for the optical fibers. The connecting groove design of the deep etched silicon vias 2 avoids very thin silicon sidewalls between the vias, enhancing the density and integration of the fiber optic array, enabling more optical fibers to achieve efficient transmission within a limited space. The pyramidal slot 3 on the back is located between the two sets of substrates 1, and its main function is to guide the optical fibers smoothly into the deep etched silicon vias 2. This helps ensure precise positioning of the optical fibers during the insertion process, reducing the risk of fiber damage and misalignment. The pyramidal slot 3 simplifies the optical fiber insertion process, improves production efficiency, ensures precise insertion and fixing of the optical fibers, and reduces the failure rate of the fiber optic array.

[0034] like Figures 1 to 2 As shown, the substrate 1 is a silicon wafer, each silicon wafer has a (100) face and a thickness greater than 0.6 mm.

[0035] In this embodiment of the invention, silicon wafers are used as substrate 1. Silicon wafers possess excellent electrical, thermal, optical, and chemical stability, making them a commonly used material in semiconductor and optoelectronic device manufacturing. Selecting silicon wafers as the substrate for the fiber optic array ensures good mechanical strength, thermal stability, and chemical inertness, thereby supporting high-precision manufacturing and long-term stable operation of the fiber optic array. Silicon wafers with a (100) crystal plane possess specific crystallographic characteristics, such as lower surface roughness, better crystal integrity, and higher electron mobility. This facilitates more precise fiber positioning, lower loss, and higher transmission efficiency during manufacturing. The thickness of the silicon wafer is greater than 0.6 mm, ensuring sufficient strength and stability of the substrate, enabling it to withstand various physical and chemical treatments during manufacturing. A thicker substrate also contributes to the subsequent fiber optic... The silicon wafer provides stronger support during fixing and connection, reducing the risk of deformation and damage to the fiber array; as a substrate material, the silicon wafer has high flatness and smoothness, which helps to achieve more accurate fiber positioning and alignment during manufacturing, increase the density of the fiber array, reduce crosstalk between fibers and reduce loss; the silicon wafer has good thermal stability and chemical inertness, and can maintain stable performance in various environments, which helps to ensure the stability and reliability of the fiber array during long-term use, and reduce performance degradation or failure caused by environmental factors; it improves transmission efficiency, and the silicon wafer with a (100) face has lower surface roughness and better crystal integrity, which helps to reduce light scattering and absorption loss; the thicker substrate can provide stronger support, reduce the risk of deformation and damage to the fiber array, and thus further improve the light transmission efficiency.

[0036] like Figures 1 to 2 As shown, the substrate 1 is made of two or more layers of silicon wafers, and the deep etched silicon vias 2 on each layer of silicon wafers are aligned and stacked to form a fiber array structure.

[0037] In this embodiment of the invention, by using two or more layers of silicon wafers as substrates, the mechanical strength and stability of the entire fiber optic array substrate can be significantly increased. The multilayer structure can better distribute and withstand external pressure, reducing the risk of substrate deformation and breakage. Aligning and stacking the deeply etched silicon vias on each silicon wafer layer can extend the length of the holes fixing the optical fibers, improving the reliability of the fiber optic array. This also improves the transmission performance and stability of the fiber optic array. Furthermore, it facilitates manufacturing and expansion; the multilayer silicon wafer stacking method allows for easy adjustment of the size and density of the fiber optic array by increasing or decreasing the number of silicon wafer layers, thereby meeting different application requirements. Simultaneously, it also benefits the flexibility and scalability of the manufacturing process. The fiber optic array structure formed by multilayer silicon wafer stacking enhances... The improved structural strength and fiber density significantly enhance the overall performance of fiber optic arrays, including higher transmission efficiency, lower loss, and stronger anti-interference capabilities. Through precise alignment and stacking design, multilayer silicon wafers can more effectively utilize space resources, enabling fiber optic arrays to achieve more compact and lightweight designs while maintaining high performance. The multilayer silicon wafer stacking structure provides better mechanical support and protection, reducing the impact of the external environment on the fiber optic array. This contributes to enhancing the reliability and stability of the fiber optic array and extending its lifespan. The modular design and optimized manufacturing process of multilayer silicon wafer stacking enable mass production and reduce unit costs. Furthermore, it facilitates repair and replacement of damaged parts, further reducing maintenance costs.

[0038] like Figures 1 to 2 As shown, the deep etched silicon via 2 is a plurality of deep etched silicon vias 2 formed on a silicon wafer by deep silicon etching technology, and the deep etched silicon via 2 is a trapezoid with its edge tangent to the diameter of the optical fiber.

[0039] In this embodiment of the invention, the edge of the deep-etched silicon via 2 is tangent to the diameter of the optical fiber. Each via is custom-made for an optical fiber of a specific diameter, ensuring that the optical fiber can be tightly and accurately inserted into the via, reducing the gap between the optical fiber and the via wall, thereby reducing optical signal loss and crosstalk. The tightly fitted optical fiber and the deep-etched silicon via 2 help enhance the fixation effect of the optical fiber on the substrate. This reduces the risk of optical fiber displacement or detachment during use, ensuring the stability and reliability of the optical fiber array. Deep silicon etching technology can achieve high-precision etching, ensuring that the size and shape of each deep-etched silicon via meet the design requirements. Precision manufacturing processes help improve the overall performance and consistency of fiber optic arrays; precisely matched fibers and deeply etched silicon vias enhance the fixation of fibers on the substrate, thereby improving the stability and reliability of the fiber optic array; this is especially important for fiber optic communication systems that require long-term stable operation; forming deeply etched silicon vias through deep silicon etching technology enables mass production with high precision; this helps reduce production costs, shorten production cycles, and improve product quality; and it promotes the miniaturization of fiber optic arrays, as precisely matched fibers and deeply etched silicon vias enable fiber optic arrays to achieve smaller designs while maintaining high performance.

[0040] like Figures 1 to 2 As shown, the deep-etched silicon hole 2 is octagonal.

[0041] In this embodiment of the invention, the octagonal structure has better symmetry than other shapes such as circles and hexagons, allowing the optical fiber to be supported more evenly when inserted into the octagonal deep-etched silicon aperture 2, thereby improving the stability of the optical fiber fixation. The octagonal structure allows for a more compact arrangement than a circular structure, thus accommodating more optical fibers on the same substrate area and increasing the density of the fiber array. The octagonal deep-etched silicon aperture 2 can be manufactured with high precision using advanced micro-nano fabrication techniques such as ICP silicon deep etching technology. This not only ensures that the size and shape of each aperture meet design requirements but also improves manufacturing efficiency and reduces production costs. Silicon vias significantly improve the overall performance of fiber optic arrays by enhancing fiber fixation stability, optimizing optical signal transmission characteristics, and increasing fiber array density. Tight fiber fixation helps reduce the failure rate of fiber optic arrays during use, enhancing their reliability, which is especially important for fiber optic communication systems that require long-term stable operation. The octagonal structure allows for tighter fiber arrangement, facilitating the miniaturization of fiber optic array designs, which is significant for applications requiring compact installation space. Furthermore, advanced micro-nano fabrication technology is used to manufacture octagonal deep-etched silicon vias, ensuring the controllability and repeatability of the manufacturing process.

[0042] like Figures 1 to 2As shown, when the fiber spacing is close to or less than the fiber diameter, a connecting groove is provided between adjacent deep-etched silicon holes 2.

[0043] In this embodiment of the invention, when the fiber spacing is close to or less than the fiber diameter, there will be an arrangement conflict between adjacent fibers, meaning the fibers cannot be placed side by side. This arrangement conflict can be resolved while maintaining the compactness of the fiber array. The connecting slot allows the fiber to have some bending space when inserted into the deeply etched silicon aperture 2, reducing the overall size of the fiber array and increasing the fiber density. The connecting slot can also enhance the mechanical strength of the fiber array to a certain extent. By dispersing the stress concentration points of the fiber array under stress, the risk of damage to the fiber array due to external forces can be reduced. By setting the connecting slot, the fiber arrangement conflict can be resolved while maintaining the compactness of the fiber array, thereby increasing the density of the fiber array. This is particularly important for applications requiring high-density fiber connections. The connecting slot helps optimize the transmission path of optical signals and improves the transmission performance of the fiber array. This is of great significance for applications requiring high-quality optical signal transmission. By dispersing stress concentration points and improving the stability of fiber fixation, the connecting slot helps enhance the reliability of the fiber array, making the fiber array more stable and reliable during long-term use. The connecting slot allows the fiber to have some bending space when inserted into the deeply etched silicon aperture 2, which helps reduce the overall size of the fiber array and promotes its miniaturization. This is particularly important for applications requiring compact installation space.

[0044] like Figures 1 to 2 As shown, the pyramidal groove 3 on the back is a chamfer formed by back grooving and etching processes, used for the introduction of optical fibers.

[0045] In this embodiment of the invention, the pyramidal slot 3 on the back side serves as a chamfer design to assist in the introduction of optical fibers. It guides the optical fibers more smoothly into the deeply etched silicon vias 2, reducing friction and damage during the introduction process. The pyramidal slot 2 simplifies the manufacturing process of the optical fiber array. The chamfer formed by the slotting and etching processes makes the introduction of optical fibers easier to control, improving the manufacturability of the optical fiber array. The pyramidal slot 3 can also optimize the layout of the optical fiber array according to actual needs. By adjusting the position and shape of the slot, the fiber introduction path can be flexibly arranged to meet the requirements of different application scenarios. The pyramidal slot 3 significantly improves the fiber introduction efficiency; the chamfer formed by the slot guides the optical fibers more smoothly into the deeply etched silicon vias. In hole 2, the resistance and time during the fiber introduction process are reduced; optical fibers are easily damaged by friction and compression during the introduction process; the pyramidal slot on the back side reduces the direct contact area and friction between the optical fiber and the substrate, thus reducing the risk of damage to the optical fiber during the introduction process; the pyramidal slot on the back side also helps to enhance the reliability and stability of the optical fiber array; by optimizing the optical fiber introduction path and reducing the risk of optical fiber damage, the optical fiber array can maintain stable performance during long-term use; the pyramidal slot on the back side, as a key design feature of the optical fiber array substrate, has an important impact on the overall performance of the optical fiber array; by improving the optical fiber introduction efficiency and reducing the risk of optical fiber damage, it helps to improve the overall performance of the optical fiber array, such as transmission performance, reliability, and stability.

[0046] like Figures 1 to 2 As shown, the pyramid-shaped slot 3 on the back is a single layer.

[0047] In this embodiment of the invention, the single-layer back pyramidal slot 3 is relatively simple and can be completed through one or a few back grooving and etching processes, thereby simplifying the manufacturing process and reducing production costs. The single layer helps reduce variables and sources of error in the manufacturing process, making the size, shape, and position of the back pyramidal slot 3 more precise, thus improving the manufacturing accuracy of the fiber array substrate. The single-layer back pyramidal slot 3 provides a uniform path and angle for fiber insertion, helping to ensure the consistency and stability of the fiber during insertion, reducing fiber damage or insertion difficulties caused by inconsistent grooving. The single layer makes the back pyramidal slot 3 more compact, reducing the space occupied on the back of the substrate, thereby... This design helps optimize the overall compactness of the fiber optic array, making it more suitable for space-constrained applications; simplified manufacturing processes and improved manufacturing precision help shorten production cycles and increase production efficiency, thereby meeting market demand for short-cycle, high-precision fiber optic array substrates; simplified manufacturing processes and reduced sources of error help reduce production costs, making short-cycle, high-precision fiber optic array substrates more competitive; single-layer back-side pyramidal slots help reduce the risk of fiber damage during fiber insertion, improving the reliability and stability of the fiber optic array and thus extending its service life; optimized fiber insertion paths and compact substrates help improve the user experience, making the installation and use of the fiber optic array substrate more convenient and faster.

[0048] A specific embodiment of Example 1 is as follows: A 1mm silicon wafer with a (100) crystal plane is used and polished on both sides. First, a mask is designed, and an octagon is designed. The octagon is inscribed in a circle with a diameter of 125 micrometers. The octagon is arranged in a period of 127 micrometers. In this embodiment, for simplicity, only 8 octagons are arranged. The octagonal holes are set as light-transmitting areas, that is, as etching areas on the wafer. The octagonal holes are connected to the holes adjacent to the holes and are also set as light-transmitting areas. To illustrate the flexibility of the design of this patent, the last hole is moved 20um vertically to form the distribution of fiber optic holes in the horizontal and vertical directions, such as... Figure 1 As shown, a high-precision mask is made using this pattern, and then the wafer is exposed using this mask. Deep silicon etching is performed to a depth of 600 micrometers. A groove is designed on the back side. Based on the angle of the (111) plane of the crystal, the back side is etched with potassium hydroxide solution. The groove width is 690 micrometers, and the length on the left and right exceeds the front hole array by about 280 micrometers. In this way, the optical fiber can be easily guided from the back side into the etched hole to form a high-precision optical fiber array.

[0049] Example 2, as Figures 3 to 4 As shown, the difference is:

[0050] The deep-etched silicon hole 2 is circular;

[0051] The pyramid-shaped slot 3 on the back is double-layered.

[0052] In this embodiment of the invention, the circular deep-etched silicon aperture 2 has uniform geometric characteristics, enabling more accurate positioning of the optical fiber when inserted into the aperture; it helps reduce misalignment and crossing between optical fibers, improving the arrangement accuracy of the fiber array; the smooth edges of the circular deep-etched silicon aperture 2 and the uniform contact area with the optical fiber contribute to better fixation; it ensures the stability of the optical fiber during transmission, reducing fiber displacement or damage caused by vibration or external force; the circular deep-etched silicon aperture 2 is relatively simple and can be efficiently manufactured using standard micro-nano fabrication techniques; it helps reduce production costs and improve manufacturing efficiency; the circular deep-etched silicon aperture 2 improves optical fiber positioning accuracy and optimizes optical fiber positioning. The improved fiber fixation and enhanced optical signal transmission quality significantly improve the overall performance of the fiber optic array. Optimized fiber fixation and optical signal transmission quality help reduce the failure rate of the fiber optic array during use, increasing its reliability. This is especially important for fiber optic communication systems requiring long-term stable operation. The circular deep-etched silicon vias reduce the risk of fiber displacement or damage, thereby lowering the maintenance cost of the fiber optic array. This makes the fiber optic array more economical and efficient during long-term use. Furthermore, the circular deep-etched silicon vias facilitate standardized and modular design of the fiber optic array, simplifying the production process, improving production efficiency, and facilitating subsequent upgrades and maintenance.

[0053] The double-layered pyramidal slot 3 on the back provides more path options for fiber optic cable insertion; by adjusting the position and angle of the two slots, the fiber optic cable can be flexibly guided into different deeply etched silicon vias 2, increasing the flexibility of fiber optic cable insertion; the double layer allows the fiber array substrate to accommodate more fibers within a limited area; by rationally arranging the two slots, the substrate space can be maximized, increasing the density of the fiber array; the double-layered pyramidal slot 3 on the back provides more fixing points for the fiber optic cable; when the fiber optic cable passes through the two slots and is fixed in the deeply etched silicon vias 2, the stability is significantly improved, helping to reduce the displacement or detachment of the fiber optic cable due to external forces during use; the double layer allows the fiber array substrate to accommodate more fibers. The double-layered pyramidal slot 3 significantly improves the overall performance of the fiber optic array by increasing the flexibility of fiber insertion, increasing the density of the fiber optic array, enhancing the stability of fiber fixation, and optimizing the optical signal transmission path. Furthermore, the double-layered pyramidal slot 3 helps reduce the failure rate of the fiber optic array during use, thereby lowering maintenance costs. It also expands application scenarios, making the fiber optic array substrate more flexible and customizable to meet the needs of different application scenarios. For example, the double-layered design is more advantageous in applications requiring high-density fiber connections or complex optical signal transmission paths.

[0054] A specific embodiment of Example 2 involves using a 1mm silicon wafer with a (100) crystal plane, polished on both sides. First, a mask is designed, starting with a circle of 125 micrometers in diameter. This circle is then periodically arranged at 127 micrometers. For simplicity, this embodiment uses only two rows of eight holes each. The circular holes are designated as light-transmitting areas, i.e., etching areas on the wafer. The holes adjacent to each other are also designated as light-transmitting areas. In this embodiment, the light-transmitting area is formed by moving the line connecting the centers of the circles up and down by 20 micrometers and deleting the area formed by the intersection of the moved line and the circle. Thus, the minimum linewidth of the photolithography is 8.5 micrometers. Figure 3 As shown, a high-precision mask is fabricated using this pattern, and then this mask is used to expose the wafer. Deep silicon etching is performed to a depth of 600 micrometers. A groove is designed on the back side. Based on the angle of the (111) plane of the crystal, the back side is etched with potassium hydroxide solution. The groove width is 690 micrometers, and its length extends approximately 280 micrometers beyond the front hole array. This allows the optical fiber to be easily guided from the back side into the etched hole to form a high-precision optical fiber array, such as... Figure 4 As shown, after a single layer is completed, two identical wafers with through holes are aligned, bonded, and stacked to form a fiber array perforated plate with a thickness of 2 mm.

[0055] The above description is the preferred embodiment of this utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this utility model, and these improvements and modifications should also be considered within the protection scope of this utility model.

Claims

1. A short-period high-precision fiber optic array substrate, characterized in that, include: The substrate (1) has two sets of oppositely arranged substrates for fixing optical fibers; Deeply etched silicon vias (2) are formed on the substrate (1), and there are a plurality of deeply etched silicon vias (2) arranged in sequence; A pyramidal groove (3) is formed between the two sets of substrates (1) to guide optical fibers into a deep etched silicon via (2).

2. The small-period high-precision fiber array substrate according to claim 1, characterized in that, The substrate (1) is a silicon wafer, each silicon wafer has a (100) face and a thickness greater than 0.6 mm.

3. The small-period high-precision fiber array substrate according to claim 2, characterized in that, The substrate (1) is made of two or more layers of silicon wafers, and the deep etched silicon vias (2) on each layer of silicon wafers are aligned and stacked to form a fiber array structure.

4. The small-period high-precision fiber array substrate according to claim 3, characterized in that, The deep etched silicon vias (2) are multiple deep etched silicon vias (2) formed on a silicon wafer by deep silicon etching technology. The deep etched silicon vias (2) are trapezoidal with edges tangent to the diameter of the optical fiber.

5. The small-period high-precision fiber array substrate according to claim 4, characterized in that, The deep-etched silicon via (2) is octagonal.

6. The small-period high-precision fiber array substrate according to claim 4, characterized in that, The deep-etched silicon via (2) is circular.

7. The small-period high-precision fiber array substrate according to claim 6, characterized in that, When the fiber spacing is close to or less than the fiber diameter, a connecting groove is provided between adjacent deep-etched silicon holes (2).

8. The small-period high-precision fiber array substrate according to claim 7, characterized in that, The pyramidal groove on the back (3) is a chamfer formed by back grooving and etching processes, used for the introduction of optical fibers.

9. The small-period high-precision fiber array substrate according to claim 8, characterized in that, The pyramid-shaped slot (3) on the back is a single layer.

10. The small-period high-precision fiber array substrate according to claim 8, characterized in that, The pyramid-shaped slot (3) on the back is double-layered.

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