Heat sink, semiconductor device, and electronic apparatus

Abstract

The utility model discloses a heat radiator, a semiconductor device and an electronic device, the heat radiator comprises a heat radiation main body, two opposite sides of the heat radiation main body are respectively a first side and a second side along a first direction, the first side of the heat radiation main body is provided with a heat-conducting medium contact surface, and the heat-conducting medium contact surface is used for contacting with a heat-conducting medium at a heating element; and the heat-conducting medium contact surface is provided with a heat-conducting medium accommodating part which is sunken towards the second side, and the heat-conducting medium accommodating part is suitable for accommodating part of the heat-conducting medium when the heat-conducting medium contact surface is in contact with the heat-conducting medium. Therefore, the volume of the heat-conducting medium left outside the heat-conducting medium accommodating part can be reduced, so that the heat-conducting medium between the heating element and the heat-conducting medium contact surface is thinner, the heat resistance is smaller, and the heat-conducting medium can be prevented from overflowing from the heating element and the heat-conducting medium contact surface; therefore, the heat dissipation capability and the product yield of the semiconductor device can be improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to electronic technical field especially is related to a radiator, semiconductor device and electronic equipment. BACKGROUND

[0002] The heat dissipation mode of the heating element is usually to coat a layer of silicone grease or heat dissipation glue between the exposed heating element surface and the radiator, the silicone grease layer can conduct the heat generated by the heating element to the radiator in the form of heat conduction, and then dissipate heat to the air. In this process, the thickness of the silicone grease layer and the contact between the radiator and the silicone grease layer are important factors affecting the heat conduction efficiency and the important factors affecting the heat dissipation efficiency of the heating element.

[0003] In the related art, after the radiator extrudes the silicone grease layer, the thickness of the silicone grease layer is still thick, and it is difficult to ensure that the heating element, the silicone grease and the radiator are in full contact, which leads to a large thermal resistance between the heating element and the radiator, and a low heat dissipation efficiency of the heating element. In addition, if the extrusion force of the radiator on the silicone grease layer is too large, it will cause the loss of silicone grease to a certain extent, and even the risk of rupture of the heating element. SUMMARY

[0004] The utility model aims at least solve one of the technical problems existing in the prior art. For this purpose, the utility model provides a radiator, which can improve the heat dissipation efficiency of the heating element and the product yield.

[0005] The utility model further provides a semiconductor device.

[0006] The utility model further provides an electronic equipment.

[0007] According to the radiator provided by the utility model, the first side of the radiator is provided with the heat conduction medium contact surface, the heat conduction medium contact surface is used for contacting the heat conduction medium at the heating element, the heat conduction medium contact surface is provided with the heat conduction medium containing portion recessed towards the second side, and the heat conduction medium containing portion is suitable for containing part of the heat conduction medium when the heat conduction medium contact surface contacts the heat conduction medium.

[0008] Thus, by arranging the heat-conducting medium accommodating portion on the heat-dissipating body and recessing the heat-conducting medium accommodating portion from the heat-conducting medium contact surface to the second side of the heat-dissipating body, when the heat-conducting medium contact surface contacts the heat-conducting medium and pressure is applied to the heat-dissipating body to extrude the heat-conducting medium, the heat-conducting medium can at least partially overflow into the heat-conducting medium accommodating portion, so that the volume of the heat-conducting medium outside the heat-conducting medium accommodating portion can be reduced, which is conducive to reducing the size of the heat-conducting medium in the first direction between the heat-generating element and the heat-conducting medium contact surface, so that not only can the thermal resistance between the heat-conducting medium contact surface and the heat-generating element be effectively reduced, and the heat dissipation capacity of the semiconductor device can be improved, but also the overflow of the heat-conducting medium from between the heat-generating element and the heat-conducting medium contact surface can be reduced, which is conducive to improving product yield.

[0009] According to some embodiments of the present application, the heat-conducting medium accommodating portion is configured as a blind hole, one end of the blind hole is located at the heat-conducting medium contact surface, and the other end of the blind hole is located inside the heat-dissipating body and is arranged in a spaced manner with the second side of the heat-dissipating body.

[0010] According to some embodiments of the present application, the center axis of the blind hole extends along the first direction.

[0011] According to some embodiments of the present application, the size of the heat-dissipating body along the first direction is h1, the size of the blind hole along the first direction is h2, and h1 and h2 satisfy the relationship: 0.3h1≤h2≤0.9h1.

[0012] According to some embodiments of the present application, the cross section of the blind hole is circular, and the aperture of the blind hole is L, which satisfies the relationship: 40μm≤L≤60μm.

[0013] According to some embodiments of the present application, the cross section of the blind hole is at least one of circular, elliptical and polygonal.

[0014] According to some embodiments of the present application, the heat-conducting medium accommodating portion is a plurality of heat-conducting medium accommodating portions, and the plurality of heat-conducting medium accommodating portions are distributed in a spaced manner on the heat-conducting medium contact surface.

[0015] According to some embodiments of the present application, the plurality of heat-conducting medium accommodating portions are uniformly distributed in a row-by-row manner on the heat-conducting medium contact surface.

[0016] According to some embodiments of the present application, the area of the heat-conducting medium contact surface is S1, the projection area of the plurality of heat-conducting medium accommodating portions on the heat-conducting medium contact surface along the first direction is S2, and S1 and S2 satisfy the relationship: 1 / 5S1<S2<1 / 3S1.

[0017] According to some embodiments of the present application, the heat dissipation main body is a heat dissipation plate, and the second side is provided with a heat dissipation plane.

[0018] According to some embodiments of the present application, the heat dissipation main body is a heat dissipation plate, and the heat dissipation device further comprises: a plurality of heat dissipation fins, the plurality of heat dissipation fins are distributed on the second side of the heat dissipation main body.

[0019] The semiconductor device according to the embodiments of the present application comprises: a circuit board; a heat generating element, which is arranged on the circuit board; a heat conducting medium, which is arranged on the heat generating element; the heat dissipation device described above, which is arranged on the heat conducting medium and is in contact with the heat conducting medium; the heat conducting medium comprises a first part and a second part, the first part is located between the heat conducting medium and the heat generating element, and the second part overflows into the heat conducting medium accommodating part under the extrusion contact of the heat dissipation device and the heat conducting medium.

[0020] According to some embodiments of the present application, the size of the first part along the first direction is h3, and h3 satisfies the relationship: 15 μm≤h3≤20 μm.

[0021] According to some embodiments of the present application, the heat conducting medium is a heat conducting medium containing silicon ions, the diameter of the silicon ions is D, the aperture of the blind hole is L, and D and L satisfy the relationship: D≤L.

[0022] According to some embodiments of the present application, the heat conducting medium further comprises a third part, the third part overflows between the heat conducting medium and the heat generating element, the volume of the third part is V1, the total volume of the second part is V2, and V1 and V2 satisfy the relationship: V1≤V2.

[0023] The electronic device according to the embodiments of the present application comprises a power supply device and the semiconductor device described above.

[0024] The additional aspects and advantages of the present application will be partially given in the following description, partially will become obvious from the following description, or will be understood by the practice of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0025] The above and / or additional aspects and advantages of the present application will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

[0026] Figure 1 is a schematic view of the heat dissipation device according to the embodiments of the present application;

[0027] Figure 2 is Figure 1A-A direction;

[0028] Figure 3 For Figure 1 A schematic view of the B region;

[0029] Figure 4 is a partial schematic view of a semiconductor device in a packaging process according to embodiments of the present application;

[0030] Figure 5 is a partial schematic view of a semiconductor device in a packaging process according to embodiments of the present application;

[0031] Figure 6 is a schematic view of a semiconductor device according to some embodiments of the present application;

[0032] Figure 7 is a schematic view of a semiconductor device according to some other embodiments of the present application.

[0033] Reference signs:

[0034] 1000, semiconductor device;

[0035] 100, heat sink; 200, circuit board; 300, heat generating element; 400, plastic packaging mold; 500, substrate;

[0036] 10, heat dissipation main body; 11, first side; 111, heat conduction medium contact surface; 112, heat conduction medium accommodating portion; 12, second side; 13, heat dissipation plane; 14, heat dissipation fin;

[0037] 20, heat conduction medium; 21, first portion; 22, second portion. DETAILED DESCRIPTION

[0038] Embodiments of the present application will be described in detail below, and the embodiments described with reference to the accompanying drawings are exemplary, and the embodiments of the present application will be described in detail below.

[0039] Embodiments of the present application will be described in detail below, and the embodiments described with reference to the accompanying drawings are exemplary, and the embodiments of the present application will be described in detail below. Figure 1 、 Figure 2 、 Figure 3 、 Figure 6 and Figure 7 The heat sink 100 according to embodiments of the present application will be described below, and the heat sink 100 according to embodiments of the present application can be applied to a semiconductor device 1000, and the semiconductor device 1000 according to embodiments of the present application can be applied to an electronic device.

[0040] In combination with Figure 1 、 Figure 2 and Figure 6As shown, the heat sink 100 according to the embodiment of the present application can mainly include: a heat dissipation main body 10, wherein along the first direction, the opposite sides of the heat dissipation main body 10 are respectively a first side 11 and a second side 12, the first side 11 of the heat dissipation main body 10 is provided with a heat conduction medium contact surface 111, the heat conduction medium contact surface 111 is used for contacting the heat conduction medium 20 at the heating element 300, so that heat conduction between the heat conduction medium 20 can be conducted. In the embodiment of the present application, the heat conduction medium 20 is laid between the heating element 300 and the heat conduction medium contact surface 111, the heating element 300 will generate heat in the working process, so that the heat on the heating element 300 can be conducted to the heat conduction medium contact surface 111 through the heat conduction medium 20, and then dissipated to the air through the heat dissipation main body 10.

[0041] Further, in order to ensure the conduction efficiency of heat between the heating element 300, the heat conduction medium 20 and the heat dissipation main body 10, it is necessary to press the side of the heat dissipation main body 10 along the first direction towards the heating element 300, that is, to press from the second side 12 to the first side 11, so that not only the contact between the heating element 300, the heat conduction medium 20 and the heat dissipation main body 10 can be strengthened, and the gap between the heating element 300, the heat conduction medium 20 and the heat dissipation main body 10 can be avoided, but also the size of the heat conduction medium 20 between the heating element 300 and the heat dissipation main body 10 in the first direction can be reduced, and then the thermal resistance of the heat conduction medium 20 can be reduced, which is beneficial to improve the heat dissipation capacity of the semiconductor device 1000.

[0042] Further, the heat conduction medium contact surface 111 is provided with a heat conduction medium containing portion 112 recessed towards the second side 12, the first side 11 of the heat conduction medium containing portion 112 is open, so that after the heat conduction medium contact surface 111 contacts the heat conduction medium 20, the pressure along the first direction and from the second side 12 to the first side 11 is applied to the heat dissipation main body 10, the heat conduction medium 20 between the heat conduction medium contact surface 111 and the heating element 300 can be extruded. At this time, the heat conduction medium 20 is extruded, part of the heat conduction medium 20 can enter the inside of the heat conduction medium containing portion 112 through the open side of the heat conduction medium containing portion 112, and the volume of the heat conduction medium 20 existing between the heat conduction medium contact surface 111 and the heating element 300 is reduced.

[0043] In this way, on the one hand, the size of the heat conduction medium 20 in the first direction can be reduced, so that the thermal resistance of the heat conduction medium 20 in the first direction can be reduced, so that the heat generated by the heating element 300 when working can be more efficiently conducted to the heat dissipation main body 10 through the heat conduction medium 20, and compared with the prior art, the heat dissipation capacity of the semiconductor device 1000 in the present application is better.

[0044] In the prior art, the heat-conducting medium can overflow from between the heat-generating element and the heat-dissipating main body and flow to other electrical components on the semiconductor device during the process of being extruded, which can cause short circuit of the other electrical components and affect the normal function of the semiconductor device. In the embodiment of the present application, the heat-conducting medium 20 can at least partially enter the heat-conducting medium accommodating portion 112 after being extruded, thereby reducing the problem of overflow of the heat-conducting medium 20 from between the heat-generating element 300 and the heat-dissipating main body 10 and causing short circuit of other electrical components on the semiconductor device 1000, which is conducive to improving the product yield of the semiconductor device 1000.

[0045] In combination Figure 2 As shown in the figure, the heat-conducting medium accommodating portion 112 is configured as a blind hole, one end of the blind hole is located at the heat-conducting medium contact surface 111, and the other end of the blind hole is located inside the heat-dissipating main body 10 and is spaced apart from the second side 12 of the heat-dissipating main body 10. Specifically, in the embodiment of the present application, the heat-conducting medium accommodating portion 112 is a hole structure, which facilitates the opening of the heat-conducting medium accommodating portion 112 on the heat-conducting medium contact surface 111 and is simple in structure and convenient to punch.

[0046] Further, one end of the hole structure of the heat-conducting medium accommodating portion 112 is located at the heat-conducting medium contact surface 111, so that the heat-conducting medium 20 in contact with the heat-conducting medium contact surface 111 can directly enter the inside of the hole structure after being extruded. After punching in the direction towards the second side 12 on the heat-conducting medium contact surface 111, the heat-conducting medium accommodating portion 112 is recessed towards the second side 12 to define a space for accommodating the heat-conducting medium 20 in the hole structure. The other end of the heat-conducting medium accommodating portion 112 is spaced apart from the second side 12 of the heat-dissipating main body 10, so that a blind hole can be formed in the heat-dissipating main body 10 and the heat-conducting medium 20 exists in the heat-conducting medium accommodating portion 112.

[0047] In this way, the heat-conducting medium 20 entering the heat-conducting medium accommodating portion 112 can always be located inside the heat-dissipating main body 10 and cannot overflow from the second side 12 of the heat-dissipating main body 10, further, the volume of the heat-conducting medium 20 between the heat-conducting medium contact surface 111 and the heat-generating element 300 can be prevented from being too small, the contact reliability between the heat-conducting medium 20 and the heat-generating element 300 can be guaranteed, the contact reliability between the heat-conducting medium 20 and the heat-conducting medium contact surface 111 can be guaranteed, and thus the reliability of the heat-dissipating function of the semiconductor device 1000 can be guaranteed.

[0048] In combination Figure 2 and Figure 6As shown, the center axis of the blind hole extends along the first direction. Specifically, the blind hole in the embodiment of the utility model is a columnar hole structure. By so arranging, on the one hand, the columnar hole structure is relatively simple, facilitating the implementation of the punching operation, and the processing difficulty of the heat-conducting medium accommodating portion 112 can be avoided to increase, and on the other hand, the stress received by the blind hole structure is consistent with the center axis of the blind hole, so that the structural reliability of the blind hole can be improved, and the columnar structure of the blind hole can be prevented from collapsing due to stress concentration in the process of the heat dissipation main body 10 being extruded, thereby facilitating the improvement of the structural reliability of the heat dissipation main body 10.

[0049] In addition, by arranging the center axis of the blind hole to extend along the first direction, the moving direction of the heat-conducting medium 20 after entering the blind hole can always be along the first direction, so that the resistance received by the heat-conducting medium 20 when moving in the blind hole can be reduced, and the heat-conducting medium 20 can be pressed to enter the heat-conducting medium accommodating portion 112 faster and preferentially, so that the overflow speed of the heat-conducting medium 20 from between the heat-generating element 300 and the heat-conducting medium contact surface 111 can be slowed down, and the overflow amount of the heat-conducting medium 20 from between the heat-generating element 300 and the heat-conducting medium contact surface 111 can be reduced, thereby facilitating the improvement of the product yield of the semiconductor device 1000.

[0050] In combination with FIG Figure 2 and Figure 6 As shown, in some embodiments of the utility model, the size of the heat dissipation main body 10 along the first direction is h1, the size of the blind hole along the first direction is h2, and h1 and h2 satisfy the relationship: 0.3h1≤h2. By so arranging, the size of the blind hole along the first direction can be prevented from being too small. If the size of the blind hole along the first direction is too small, the volume of the heat-conducting medium 20 that can be accommodated by the blind hole is too small, so that the size of the heat-conducting medium 20 between the heat-generating element 300 and the heat-conducting medium contact surface 111 in the first direction will change too small, and the effect of improving the heat dissipation capacity of the semiconductor device 1000 will not be obvious. Therefore, by arranging the size of the blind hole along the first direction to be at least 0.3 times the size of the heat dissipation main body 10 along the first direction, the heat dissipation capacity of the semiconductor device 1000 can be effectively improved.

[0051] In some embodiments of the utility model, the size of the blind hole along the first direction is not more than 0.9 times the size of the heat dissipation main body 10 along the first direction. In this way, the size of the blind hole along the first direction can be prevented from being too large. If the size of the blind hole along the first direction is too large, the part of the heat dissipation main body 10 close to the second side 12 will be too weak in structural strength, and the end of the blind hole close to the second side 12 will be prone to rupture, which may cause the heat conduction medium 20 to overflow from the second side 12 of the heat dissipation main body 10. At the same time, the volume of the heat conduction medium 20 between the heat generating element 300 and the heat conduction medium contact surface 111 will also be too small, which will affect the contact reliability of the heat conduction medium contact surface 111 and the heat conduction medium 20. In this way, the size of the blind hole along the first direction is not more than 0.9 times the size of the heat dissipation main body 10 along the first direction, which not only ensures the structural reliability of the heat dissipation main body 10, but also ensures the contact reliability of the heat conduction medium contact surface 111 and the heat conduction medium 20.

[0052] In summary, in the embodiments of the utility model, the size of the heat dissipation main body 10 along the first direction is h1, and the size of the blind hole along the first direction is h2, and h1 and h2 satisfy the relationship: 0.3h1≤h2≤0.9h1. On the one hand, the heat dissipation capacity of the semiconductor device 1000 can be effectively improved, and on the other hand, not only the structural reliability of the heat dissipation main body 10 can be ensured, but also the contact reliability of the heat conduction medium contact surface 111 and the heat conduction medium 20 can be ensured.

[0053] In combination with Figure 3 As shown in the figure, the cross section of the blind hole is circular, which can simplify the manufacturing process of the blind hole and facilitate the processing of the heat dissipation main body 10.

[0054] In some embodiments of the utility model, the aperture of the blind hole is not less than 40μm, which can prevent the aperture of the blind hole from being too small. If the aperture of the blind hole is too small, it will increase the difficulty of the heat conduction medium 20 entering the heat conduction medium containing portion 112, so that more heat conduction medium 20 will overflow between the heat generating element 300 and the heat dissipation main body 10 when the heat conduction medium 20 is extruded, thereby causing short circuit of other electrical devices on the semiconductor device 1000. In this way, the heat conduction medium 20 can more easily enter the heat conduction medium containing portion 112 after being extruded, which not only improves the heat dissipation capacity of the semiconductor device 1000, but also reduces the overflow of the heat conduction medium 20.

[0055] In some other embodiments of the present application, the aperture of the blind hole is not more than 60 μm, which can prevent the aperture of the blind hole from being too large. If the aperture of the blind hole is too large, the contact area between the heat-conducting medium contact surface 111 and the heat-conducting medium 20 will be too small, which will directly affect the heat conduction from the heat-conducting medium 20 to the heat-conducting medium contact surface 111, thereby affecting the heat dissipation capacity of the semiconductor device 1000. In this way, the contact area between the heat-conducting medium contact surface 111 and the heat-conducting medium 20 can be ensured, and the heat dissipation capacity of the semiconductor device 1000 can be further improved.

[0056] In summary, in the embodiments of the present application, the cross section of the blind hole is circular, and the aperture of the blind hole is L, which satisfies the relationship: 40 μm≤L≤60 μm. On the one hand, this can not only improve the heat dissipation capacity of the semiconductor device 1000, but also reduce the overflow of the heat-conducting medium 20. On the other hand, it can ensure the heat conduction efficiency from the heat-conducting medium 20 to the heat-conducting medium contact surface 111.

[0057] According to some other embodiments of the present application, the cross section of the blind hole is at least one of a circle, an ellipse and a polygon. Specifically, the cross section shape of the blind hole in the present application can be set according to the processing technology of the blind hole and the heat dissipation requirement of the semiconductor device 1000, and the cross section shape of different blind holes can be different. For example, the cross section shape of the blind hole includes but is not limited to at least one of a circle, an ellipse and a polygon.

[0058] In combination with Figures 1-3 As shown in FIG. 1, the heat-conducting medium accommodating portion 112 is a plurality of, and the plurality of heat-conducting medium accommodating portions 112 are distributed at intervals on the heat-conducting medium contact surface 111. Specifically, in the packaging process of the heat-generating element 300, the heat-conducting medium 20 needs to be coated on the side of the heat-generating element 300 facing the heat dissipation main body 10, and then the heat-conducting medium contact surface 111 is contacted with the heat-conducting medium 20 and is extruded. In this process, each position on the heat-conducting medium contact surface 111 can possibly contact with the heat-conducting medium 20, so that the plurality of heat-conducting medium accommodating portions 112 are arranged on the heat-conducting medium contact surface 111, which can make more heat-conducting medium 20 enter the blind hole in the process of being extruded, thereby reducing the size of the heat-conducting medium 20 between the heat-generating element 300 and the heat-conducting medium contact surface 111 in the first direction as much as possible, which is conducive to reducing the thermal resistance between the heat-generating element 300 and the heat-conducting medium contact surface 111 and preventing the heat-conducting medium 20 from overflowing too much, and can further improve the heat dissipation capacity of the semiconductor device 1000 and the product yield of the semiconductor device 1000.

[0059] Further, the plurality of heat-conducting medium accommodating portions 112 are evenly distributed on the heat-conducting medium contact surface 111 in a row-by-row manner. Specifically, when the plurality of heat-conducting medium accommodating portions 112 are arranged on the heat-conducting medium contact surface 111, the plurality of heat-conducting medium accommodating portions 112 need to be evenly spaced, so that the extrusion of the heat-conducting medium 20 is more uniform, and the reduction of the heat-conducting medium 20 between the heat-generating element 300 and the heat-conducting medium contact surface 111 near each heat-conducting medium accommodating portion 112 is the same, even if there is an error, the difference will not be too large, so that after the heat-conducting medium 20 is extruded, the distribution of the heat-conducting medium 20 between the heat-generating element 300 and the heat-conducting medium contact surface 111 is more uniform.

[0060] In this way, the heat-conducting medium 20 can be more flat on the side facing the heat-conducting medium contact surface 111, which is conducive to reducing the gap between the heat-conducting medium 20 and the heat-conducting medium contact surface 111, and ensuring good contact between the heat-conducting medium contact surface 111 and the heat-conducting medium 20, thereby improving the heat transfer efficiency of the heat-conducting medium 20.

[0061] Preferably, the plurality of heat-conducting medium accommodating portions 112 are arranged on the heat-conducting medium contact surface 111 in a row-by-row manner.

[0062] In some embodiments of the present application, the area of the heat-conducting medium contact surface 111 is S1, and the projection area of the plurality of heat-conducting medium accommodating portions 112 on the heat-conducting medium contact surface 111 along the first direction is S2, and S1 and S2 satisfy the relationship: 1 / 5S1

[0063] In some other embodiments of the present application, the area of the heat-conducting medium contact surface 111 is S1, and the projection area of the plurality of heat-conducting medium accommodating portions 112 on the heat-conducting medium contact surface 111 along the first direction is S2. S1 and S2 satisfy the relationship S2 < 1 / 3S1, which can prevent the projection area of the plurality of heat-conducting medium accommodating portions 112 on the heat-conducting medium contact surface 111 along the first direction from being too large, i.e., avoid arranging too many heat-conducting medium accommodating portions 112 on the heat-conducting medium contact surface 111, and / or arranging heat-conducting medium accommodating portions 112 with too large a hole diameter on the heat-conducting medium contact surface 111. If the projection area of the plurality of heat-conducting medium accommodating portions 112 on the heat-conducting medium contact surface 111 along the first direction is too large, it will result in the actual contact area of the heat-conducting medium contact surface 111 with the heat-conducting medium 20 being too small, which will affect the normal heat dissipation capacity of the semiconductor device 1000. Therefore, in the embodiments of the present application, the projection area of the plurality of heat-conducting medium accommodating portions 112 on the heat-conducting medium contact surface 111 along the first direction is not more than 1 / 3 of the area of the heat-conducting medium contact surface 111.

[0064] In summary, the area of the heat-conducting medium contact surface 111 is S1, and the projection area of the plurality of heat-conducting medium accommodating portions 112 on the heat-conducting medium contact surface 111 along the first direction is S2. S1 and S2 satisfy the relationship 1 / 5S1 < S2 < 1 / 3S1, which can effectively improve the heat dissipation capacity of the semiconductor device 1000.

[0065] According to some embodiments of the present application, as shown in Figure 7 The heat dissipation main body 10 can be a heat dissipation plate made of a material with good heat conduction performance. The second side 12 of the heat dissipation plate can be a heat dissipation plane 13, which is in contact with air and can quickly conduct heat to the air through heat conduction to achieve heat dissipation of the semiconductor device 1000, which can reduce the temperature of the heating element 300 when working, and is beneficial to protect the working reliability of the heating element 300.

[0066] According to some other embodiments of the present application, as shown in Figure 6 The heat dissipation main body 10 can be a heat dissipation plate made of a material with good heat conduction performance. A plurality of heat dissipation fins 14 are distributed on the second side 12 of the heat dissipation plate in a spaced manner, which can increase the contact area of the heat dissipation plate 100 with the surrounding air. The heat can be quickly conducted to the air through the contact of the plurality of heat dissipation fins 14 with the air in a heat conduction manner, and then the heat dissipation of the semiconductor device 1000 can be achieved, which can reduce the temperature of the heating element 300 when working, and is beneficial to protect the working reliability of the heating element 300.

[0067] According to the embodiment of the utility model, semiconductor device 1000 includes circuit board 200, heating element 300, radiator 100 and heat conducting medium 20. Among them, circuit board 200 includes but is not limited to PCB (Printed Circuit Board, printed circuit board). Heating element 300 includes but is not limited to chip, and heating element 300 can be installed to the surface of PCB by SMT (Surface Mount Technology, surface mount technology). In the embodiment of the utility model, SMD (Surface-Mount Device, surface mount device) substrate 500 is arranged between heating element 300 and PCB, and heating element 300 is welded on the surface of PCB by SMD substrate 500, and SMD substrate 500 can not only guarantee the setting reliability of heating element 300 on PCB, but also realize the electrical connection between heating element 300 and PCB.

[0068] Further, the heat conducting medium 20 is arranged on the heating element 300, the radiator 100 is arranged on the heat conducting medium 20, and the radiator 100 and the heat conducting medium 20 are in extrusion contact with each other, so that the heat generated by the heating element 300 during operation can be conducted to the radiator 100 through the heat conducting medium 20.

[0069] During the installation of the radiator 100 and the heating element 300, the heat conducting medium 20 includes a first portion 21 and a second portion 22. The first portion 21 of the heat conducting medium 20 is located between the heat conducting medium contact surface 111 and the heating element 300, and can conduct the heat generated by the heating element 300 during operation to the heat conducting medium contact surface 111 through heat conduction, and then conduct the heat to the air through the heat dissipation plane 13 or the heat dissipation fins 14.

[0070] Further, the second portion 22 of the heat conducting medium 20 is the portion of the heat conducting medium 20 overflowing into the heat conducting medium containing portion 112 under the extrusion contact of the radiator 100 and the heat conducting medium 20. The heat conducting medium 20 of the second portion 22 is located in the blind hole, which not only prevents the heat conducting medium 20 of the second portion 22 from overflowing from between the heating element 300 and the heat conducting medium contact surface 111, but also reduces the volume of the heat conducting medium 20 of the first portion 21, so that the distance between the heat conducting medium contact surface 111 and the heating element 300 in the first direction is closer, thereby reducing the thermal resistance of the heat conducting medium 20 between the heating element 300 and the heat conducting medium contact surface 111, and improving the heat dissipation efficiency of the semiconductor device 1000.

[0071] In some embodiments of the utility model, the size of the first part 21 along the first direction is h3, and h3 satisfies the relationship: 15pm≤h3. This can avoid the size of the first part 21 along the first direction being too small. On the one hand, the minimum size of the first part 21 along the first direction is limited by the material of the heat-conducting medium 20, and on the other hand, it is to prevent the gap caused by uneven distribution of the first part 21 between the heat-generating element 300 and the heat-conducting medium contact surface 111. Therefore, the size of the first part 21 along the first direction needs to be at least 15pm.

[0072] In some other embodiments of the utility model, the size of the first part 21 along the first direction is h3, and h3 satisfies the relationship: h3≤20pm. This can avoid the size of the first part 21 along the first direction being too large. This can ensure that the thermal resistance of the first part 21 is not too high, thereby improving the conduction efficiency of heat from the heat-generating element 300 to the heat-dissipating main body 10, which is conducive to improving the heat-dissipating capacity of the semiconductor device 1000 and improving the working safety of the heat-generating element 300. Therefore, the size of the first part 21 along the first direction needs to be no more than 20pm.

[0073] According to the embodiments of the utility model, the heat-conducting medium 20 includes but is not limited to silicone grease and heat-dissipating glue. The silicone grease includes but is not limited to silicon ions. The diameter of the silicon ions is the main factor determining the extension limit of the heat-conducting medium 20 when it is extruded along the first direction. The diameter of the silicon ions is D, and the aperture of the blind hole formed on the heat-conducting medium contact surface 111 is L, and L and D satisfy the relationship: D≤L. Specifically, the aperture of the blind hole cannot be too small, otherwise the silicon ions cannot enter the heat-conducting medium accommodating portion 112, and the excess part of the silicone grease after being extruded can only overflow between the heat-generating element 300 and the heat-conducting medium contact surface 111, which can cause short circuit of other electrical devices on the semiconductor device 1000. Therefore, to ensure that the heat-conducting medium 20 can smoothly enter the heat-conducting medium accommodating portion 112, the aperture of the blind hole needs to be at least equal to the diameter of the silicon ions.

[0074] According to the embodiments of the utility model, the heat-conducting medium 20 further includes a third part, which overflows between the heat-conducting medium contact surface 111 and the heat-generating element 300. The volume of the third part is V1, and the total volume of the second part 22 is V2, and V1 and V2 satisfy the relationship: V1≤V2. Specifically, in the prior art, the heat-conducting medium is divided into one part existing between the heat-conducting medium contact surface and the heat-generating element, and another part overflowing between the heat-conducting medium contact surface and the heat-generating element. The heat-conducting medium extruded between the heat-conducting medium contact surface and the heat-generating element can only flow to other electrical devices on the semiconductor device except the heat-generating element, and a large amount of heat-conducting medium overflowing can cause a risk of short circuit of other electrical devices on the semiconductor device except the heat-generating element.

[0075] In the embodiment of the present application, the total volume of the second part 22 is set to be at least the volume of the third part, so that the amount of heat-conducting medium 20 overflowing between the heat-conducting medium contact surface 111 and the heat-generating element 300 can be greatly reduced, or even no heat-conducting medium 20 overflows between the heat-conducting medium contact surface 111 and the heat-generating element 300, so that the electrical performance of other electrical devices on the semiconductor device 1000, except for the heat-generating element 300, can be effectively prevented from being affected by the heat-conducting medium 20 overflowing between the heat-conducting medium contact surface 111 and the heat-generating element 300.

[0076] In combination with Figures 4-6 As shown in the figure, in the packaging process of the semiconductor device 1000, the heat-generating element 300 is fixed by the plastic packaging mold 400, and the heat-generating element 300 and the plastic packaging mold 400 are welded on the PCB through the SMD substrate 500. After the patching is completed, a layer of heat-conducting medium 20 is coated on the side of the heat-generating element 300 and the plastic packaging mold 400 away from the PCB, and the heat-conducting medium contact surface 111 of the heat-dissipating main body 10 is directed towards the heat-conducting medium 20, and the heat-dissipating main body 10 is placed on the heat-conducting medium 20.

[0077] By using screws around the heat-generating element 300 and the plastic packaging mold 400 to connect the heat-dissipating main body 10 with the PCB, the screws are tightened to apply a pressure to the heat-dissipating main body 10 along the first direction towards the heat-generating element 300 and the plastic packaging mold 400. Under the action of the pressure, the heat-conducting medium 20 is partially squeezed into the heat-conducting medium accommodating portion 112, and thus the installation of the heat-dissipating main body 10 and the heat-generating element 300 is completed.

[0078] In this process, it is not necessary to increase the pressing force to enhance the contact between the heat-generating element 300, the heat-conducting medium 20 and the heat-conducting medium contact surface 111, and the problem of the heat-generating element 300 being broken due to excessive pressure can be avoided, thereby facilitating the improvement of the product yield in the production process of the semiconductor device 1000.

[0079] According to the embodiment of the utility model, the semiconductor device 1000 in the utility model can be applied to electronic equipment, the semiconductor device 1000 of the utility model can effectively reduce the thermal resistance of the heat conduction medium 20 when the heat conduction medium contact surface 111 and the heating element 300 are extruded, so that the heat dissipation efficiency of the heating element 300 can be effectively improved, the working safety of the heating element 300 in the semiconductor device 1000 can be improved, so that the working efficiency and working safety of the electronic equipment can be improved.

[0080] In the description of the present specification, the description referring to the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the utility model. In the present specification, the exemplary description of the above terms does not necessarily refer to the same embodiment or example.

[0081] Although the embodiments of the utility model have been shown and described, those skilled in the art can understand that various changes, modifications, replacements and variations can be made to these embodiments without departing from the principles and purposes of the utility model, and the scope of the utility model is defined by the claims and their equivalents.

Claims

1. A heat sink, characterized by, The heat dissipation device comprises: a heat dissipation body; wherein, along a first direction, opposite sides of the heat dissipation body are a first side and a second side respectively, the first side of the heat dissipation body is provided with a heat conduction medium contact surface, and the heat conduction medium contact surface is used to contact a heat conduction medium at a heat generating element; wherein, the heat conduction medium contact surface is provided with a heat conduction medium containing portion recessed towards the second side, and the heat conduction medium containing portion is adapted to contain part of the heat conduction medium when the heat conduction medium contact surface contacts the heat conduction medium.

2. The heat spreader of claim 1, wherein, The heat conduction medium containing portion is configured as a blind hole, one end of the blind hole is located at the heat conduction medium contact surface, and the other end of the blind hole is located inside the heat dissipation body and is spaced apart from the second side of the heat dissipation body.

3. The heat sink of claim 2, wherein, The central axis of the blind hole extends along the first direction.

4. The heat sink of claim 3, wherein, The size of the heat dissipation body along the first direction is h1, the size of the blind hole along the first direction is h2, and h1 and h2 satisfy the relationship: 0.3h1≤h2≤0.9h1.

5. The heat sink of claim 2, wherein, The cross section of the blind hole is circular, and the aperture of the blind hole is L, which satisfies the relationship: 40μm≤L≤60μm.

6. The heat sink of claim 2, wherein, The cross section of the blind hole is at least one of circular, elliptical and polygonal.

7. The heat spreader of claim 1, wherein, The heat conduction medium containing portion is a plurality of heat conduction medium containing portions, and the plurality of heat conduction medium containing portions are uniformly distributed in rows and columns on the heat conduction medium contact surface.

8. The heat sink of claim 7, wherein, The area of the heat conduction medium contact surface is S1, and the projection area of the plurality of heat conduction medium containing portions on the heat conduction medium contact surface along the first direction is S2, and S1 and S2 satisfy the relationship:

9. The heat sink of claim 7, wherein, 1 / 5S1<S2<1 / 3S1. The heat dissipation body is a heat dissipation plate, and the second side is provided with a heat dissipation plane.

10. The heat spreader of claim 1, wherein, The heat dissipation body is a heat dissipation plate, and the heat dissipation device further comprises:

11. The heat spreader of claim 1, wherein, a plurality of heat dissipation fins, and the plurality of heat dissipation fins are spaced apart on the second side of the heat dissipation body. The heat dissipation device comprises:

12. A semiconductor device, characterized by comprising: a circuit board; a heat generating element, the heat generating element is provided on the circuit board; a heat conduction medium, the heat conduction medium is provided on the heat generating element; The heat dissipation device of any one of claims 1-11 is provided on the heat conduction medium and is in mutual extrusion contact with the heat conduction medium, the heat conduction medium comprises a first part and a second part, the first part is located between the heat conduction medium contact surface and the heat generating element, and the second part overflows into the heat conduction medium containing portion under the extrusion contact of the heat dissipation device and the heat conduction medium. The size of the first part along the first direction is h3, and h3 satisfies the relationship:

13. The semiconductor device according to claim 12, wherein 15μm≤h3≤20μm. The heat conduction medium is a heat conduction medium containing silicon ions, the diameter of the silicon ions is D, the aperture of the blind hole is L, and D and L satisfy the relationship:

14. The semiconductor device according to claim 12, wherein D≤L. The heat conduction medium further comprises a third part, the third part overflows between the heat conduction medium contact surface and the heat generating element, the volume of the third part is V1, the total volume of the second part is V2, and V1 and V2 satisfy the relationship:

15. The semiconductor device according to claim 12, wherein V1≤V2. The heat dissipation device comprises:

16. An electronic device, comprising: ​ The power supply device and the semiconductor device according to any one of claims 12 to 15.

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