Uniformity improving mechanism of large-beam ion implanter
By introducing structures such as a rotating seat and a guide arm into the high-current ion implanter, precise adjustment of the ion beam is achieved, solving the problem of uneven dose distribution on the silicon wafer surface and improving product quality and process consistency.
Patent Information
- Application Number
- CN202520214895.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-11
- Publication Date
- 2025-12-09
- Estimated Expiration
- 2035-02-11
AI Technical Summary
Existing high-current ion implanters suffer from uneven ion dose distribution on silicon wafer surfaces, especially at the edges of larger wafers where the same implantation effect as at the center cannot be achieved, affecting product quality and process consistency.
A high-current ion implanter uniformity enhancement mechanism was designed, including a rotating seat, a rotating plate, a horizontally adjustable fixed frame, and a flip-up guide arm. By precisely adjusting the angle and intensity of the ion beam, the flip-up guide arm ensures uniform coverage of the silicon wafer surface.
This improves the uniformity and consistency of the ion beam on the silicon wafer surface, reduces the dose difference between the edge and center regions, and enhances process quality and efficiency.
Smart Images
Figure CN223646620U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor manufacturing technology, specifically to a uniformity improvement mechanism for a high-current ion implanter. Background Technology
[0002] In modern semiconductor device manufacturing, ion implantation is a crucial process used to alter the electrical conductivity of materials. By precisely controlling the type, concentration, and distribution of impurity atoms implanted into substrates such as silicon wafers, fine-tuning of the performance of electronic components can be achieved. High-current ion implanters, as advanced equipment, are widely used in the production of large-scale integrated circuits to meet the demands for high throughput and high quality.
[0003] In actual operation, existing high-current ion implanters have a fixed ion beam spot size and relative position to the silicon wafer, which leads to differences in ion implantation dose in different areas of the entire silicon wafer surface. This affects the uniformity and consistency of the final product. Especially when processing larger silicon wafers, the edge areas often cannot achieve the same implantation effect as the center. This not only limits further improvement in product quality but also increases the complexity of subsequent process adjustments. Utility Model Content
[0004] The purpose of this invention is to provide a uniformity enhancement mechanism for a high-current ion implanter, in order to solve the problems mentioned in the background art, such as uneven ion dose distribution and significant differences between the edge and center regions during the implantation process of current high-current ion implanters.
[0005] To achieve the above objectives, this utility model provides the following technical solution: a high-current ion implanter uniformity enhancement mechanism, comprising an implanter body, a bearing platform at the bottom of the processing chamber inside the implanter body, a guide frame at the top of the processing chamber inside the implanter body, a drive seat on the guide frame, a rotating mechanism consisting of a rotating seat and a rotating plate at the bottom of the drive seat, a horizontally adjustable fixing frame symmetrically arranged at the bottom of the rotating mechanism, a guide arm with a flip-angle inside the fixing frame, and an ion beam guiding mechanism for guiding the ion beam mounted on the guide arm.
[0006] Preferably, the top of the rotating plate is provided with horizontally distributed horizontal shafts, and the top of each of the fixed frames is provided with a positioning sleeve fitted outside the horizontal shafts.
[0007] Preferably, the inside of the fixed frame is driven by a linear guide rail to form a lifting frame, and the two sides of the lifting frame are symmetrically connected to the upper end of the inner side of the guide arm with hinge shafts.
[0008] Preferably, the guide arm is provided with a positioning plate on its outer side, and the positioning plate is provided with a positioning ring on its outer side that is adapted to the structure of the ion beam guiding mechanism.
[0009] Preferably, the top of the rotating seat is provided with mounting shafts on both sides, and the bottom of the drive seat is provided with mounting sleeves on both sides that match the structure of the mounting shafts.
[0010] Preferably, the surface of the support platform is provided with multiple suction cups, and all the suction cups on the surface of the support platform are connected to the vacuum system.
[0011] Compared with existing technologies, the beneficial effects of this invention are as follows: This high-current ion implanter uniformity enhancement mechanism can improve the uniformity of ion beam distribution on the silicon wafer surface, reduce the dose difference between the edge and center regions, and thus significantly improve the consistency and process quality of ion implantation. Through the design of the rotating seat and rotating plate, this high-current ion implanter uniformity enhancement mechanism achieves precise adjustment of the ion beam angle. Combined with a laterally adjustable fixed frame and a flip-up guide arm, it ensures comprehensive coverage of silicon wafers of different sizes. The ion beam guiding mechanism precisely controls the direction and intensity of the ion beam. These structures work together to not only optimize the dose distribution during ion implantation but also improve processing efficiency. Attached Figure Description
[0012] Figure 1 This is a schematic diagram of a uniformity enhancement mechanism for a high-current ion implanter according to the present invention.
[0013] Figure 2 This is a schematic diagram of the bottom structure of the rotating seat of a high-current ion implanter uniformity enhancement mechanism according to the present invention.
[0014] Figure 3 This is a schematic diagram of the outer structure of the fixed frame of a high-current ion implanter uniformity enhancement mechanism according to the present invention.
[0015] Figure 4 This is a schematic diagram of the inner structure of the fixed frame of a high-current ion implanter uniformity enhancement mechanism according to the present invention.
[0016] In the diagram: 1. Injection machine body; 2. Support platform; 3. Guide frame; 4. Drive seat; 5. Rotary seat; 6. Rotary plate; 7. Fixed frame; 8. Guide arm; 9. Ion beam guiding mechanism; 10. Mounting sleeve; 11. Mounting shaft; 12. Horizontal shaft; 13. Positioning sleeve; 14. Hinge shaft; 15. Positioning plate; 16. Lifting frame. Detailed Implementation
[0017] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0018] Please see Figure 1-4This utility model provides a technical solution: a uniformity improvement mechanism for a high-current ion implanter, comprising an implanter body 1, a support platform 2 at the bottom of the processing chamber inside the implanter body 1, a guide frame 3 at the top of the processing chamber inside the implanter body 1, a drive seat 4 on the guide frame 3, a rotating mechanism consisting of a rotating seat 5 and a rotating plate 6 at the bottom of the drive seat 4, the rotating plate 6 being connected to the inside of the rotating seat 5 via bearings, and a motor being installed at the center of the top of the rotating plate 6, the output shaft of which is connected to the bearing at the connection between the rotating plate 6 and the rotating seat 5; symmetrically arranged horizontally adjustable fixing frames 7 at the bottom of the rotating mechanism, with a tiltable guide arm 8 inside the fixing frame 7, and a device for guiding the ion beam mounted on the guide arm 8. The ion beam guiding mechanism 9 is connected to the ion source device mounted on the drive base 4 via a guiding hose. Internally, it houses an electrode system and a magnetic field generator for focusing and deflecting the ion beam, ensuring accurate transmission along a preset path. The implanter body 1 of this structure stably supports the silicon wafer via a support platform 2, ensuring it remains in a fixed position during ion implantation. When it is necessary to adjust the ion beam distribution for uniform implantation, the rotation mechanism at the bottom of the drive base 4, consisting of a rotating seat 5 and a rotating plate 6, allows for precise angle adjustment. Furthermore, the fixed frame 7 moves horizontally as needed, enabling the entire device to be flexibly adjusted according to the specific size and shape of the silicon wafer, ensuring that even the edges of the silicon wafer at different locations are implanted. To achieve uniform coverage, the guide arm 8, which can be rotated at a pre-set angle, inside the fixed frame 7 dynamically adjusts according to preset angle parameters. This, combined with the ion beam guiding mechanism 9, precisely controls the direction and intensity of the ion beam, ensuring that the ion beam accurately targets every point on the silicon wafer surface. This achieves consistent ion implantation dose across different areas of the entire silicon wafer, particularly addressing the issue of larger silicon wafers not achieving the same implantation effect at the edges as at the center. It effectively reduces the dose difference between the edges and the center, significantly improving ion implantation consistency and process quality, reducing the complexity of subsequent process adjustments, and enhancing the uniformity and consistency of the final product. The bottom of the rotating plate 6 is fixed by a support block. The horizontal shafts 12 are distributed horizontally, and each top of the fixed frame 7 is provided with a positioning sleeve 13 fitted outside the horizontal shaft 12. A damping ring is bonded and fixed to the inner wall of the positioning sleeve 13. The cooperation between the horizontal shaft 12 and the positioning sleeve 13 in this structure ensures that the fixed frame 7 can be laterally displaced to a suitable distance. At the same time, the damping ring on the inner wall of the positioning sleeve 13 provides appropriate resistance to prevent the fixed frame 7 from shaking unnecessarily due to external vibration or inertia, ensuring the stability and accuracy of the fixed frame 7 during the adjustment process. The two sides of the bottom end of the guide arm 8 are connected to the inner walls of the two sides of the bottom end of the fixed frame 7 through rotating shafts. The interior of the fixed frame 7 is driven by a lifting frame 16 through a linear guide rail, and the two sides of the lifting frame 16 are symmetrically connected to the upper end of the inner side of the guide arm 8 with hinge shafts 14.The hinge shaft 14, the lifting frame 16, and the guide arm 8 are all connected by pivot pins to form a movable connection. When the lifting frame 16 moves up and down within the fixed frame 7 via the linear guide rail, the hinge shaft 14 can drive the guide arm 8 to rotate synchronously, ensuring that the angle and position of the guide arm 8 always correspond to the silicon wafer surface. This not only achieves precise control of the guide arm 8's angle but also ensures its stability and smoothness during adjustment, thereby improving the ion beam guiding mechanism 9's ability to precisely control the direction and intensity of the ion beam. A positioning plate 15 is provided on the outer side of the guide arm 8. Both ends of the positioning plate 15 are fixedly connected to the outer wall of the guide arm 8 by screws. A positioning ring adapted to the structure of the ion beam guiding mechanism 9 is welded and fixed to the outer side of the positioning plate 15. This structure ensures a stable connection between the positioning plate 15 and the guide arm 8 through the positioning ring, so that the ion beam guiding mechanism 9 always maintains the correct orientation and height. Vertically distributed mounting shafts 11 are welded and fixed to both sides of the top of the rotating seat 5, and mounting sleeves 1 that match the structure of the mounting shafts 11 are provided on both outer walls of the bottom of the drive seat 4. The mounting sleeve 10 is connected to a locking screw via a threaded structure. The rotating base 5 of this structure can slide along the mounting sleeve 10 on the drive base 4 via the mounting shaft 11 and be fixed by the locking screw. This positions the rotating mechanism, consisting of the rotating base 5 and the rotating plate 6, at a suitable height, ensuring that the ion beam guiding mechanism 9 maintains optimal working condition under different height conditions. This improves the accuracy and uniformity of ion implantation, providing a reliable guarantee for high-quality process handling. The surface of the support platform 2 is equipped with multiple suction cups, all of which are connected to a vacuum system. This vacuum system includes a vacuum pump, pipes, valves, and a control system, and is installed inside the bottom of the implanter body 1. When the silicon wafer is placed on the support platform 2, activating the vacuum system generates a strong negative pressure on each suction cup, firmly adsorbing the silicon wafer onto the surface of the support platform 2. This ensures the silicon wafer remains absolutely fixed throughout the ion implantation process, preventing displacement caused by any external vibration or operation, thus ensuring that the ion beam can accurately act on the predetermined position.
[0019] Working Principle: When using the uniformity enhancement mechanism of this high-current ion implanter, the silicon wafer is first placed on the support platform 2. The vacuum system located inside the bottom of the implanter body 1 is activated, and multiple suction cups connected to the surface of the support platform 2 through pipes generate a strong negative pressure to firmly adsorb the silicon wafer. Next, according to the specific size and shape requirements of the silicon wafer, the rotation mechanism consisting of the rotating seat 5 and the rotating plate 6 starts to work, realizing precise angle adjustment of the two fixed frames 7. Then, the fixed frames 7 move horizontally through the cooperation between the horizontal axis 12 and the positioning sleeve 13 to adjust to the appropriate spacing. As the process requirements change, the lifting frame 16 inside the fixed frames 7 is driven by a linear guide rail. The downward movement causes the hinge shaft 14, which is symmetrically connected to the upper inner side of the guide arm 8, to rotate synchronously, so that the angle and position of the guide arm 8 always correspond to the silicon wafer surface. When it is necessary to finely adjust the height of the body mechanism, loosen the locking screws on the outer wall of the mounting sleeve 10 on both sides of the bottom end of the drive seat 4, so that the drive seat 4 slides along the mounting shaft 11 on both sides of the top of the rotating seat 5. After reaching the required height, tighten the locking screws again to fix it. Finally, the ion beam guiding mechanism 9 is connected to the ion source equipment installed on the drive seat 4 through the guiding hose. The internal electrode system and magnetic field generator focus and deflect the ion beam to ensure that it is accurately transmitted to the target point on the silicon wafer surface according to the preset path, thereby completing a series of tasks.
[0020] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A uniformity enhancement mechanism for a high-current ion implanter, comprising an implanter body (1), wherein a support platform (2) is provided at the bottom end of the processing chamber inside the implanter body (1), characterized in that: The top of the processing chamber inside the injection machine body (1) is provided with a guide frame (3), and a drive seat (4) is provided on the guide frame (3). The bottom of the drive seat (4) is provided with a rotating mechanism consisting of a rotating seat (5) and a rotating plate (6). The bottom of the rotating mechanism is symmetrically provided with a horizontally adjustable fixing frame (7). The inside of the fixing frame (7) is provided with a guide arm (8) that can be flipped. An ion beam guiding mechanism (9) for guiding the ion beam is installed on the guide arm (8).
2. The uniformity enhancement mechanism for a high-current ion implanter according to claim 1, characterized in that: The top of the rotating plate (6) is provided with horizontally distributed horizontal shafts (12), and the top of the fixed frame (7) is provided with positioning sleeves (13) sleeved outside the horizontal shafts (12).
3. The uniformity enhancement mechanism for a high-current ion implanter according to claim 1, characterized in that: The fixed frame (7) is driven by a linear guide rail to form a lifting frame (16), and the two sides of the lifting frame (16) are symmetrically connected to the upper end of the inner side of the guide arm (8) with hinge shafts (14).
4. The uniformity enhancement mechanism for a high-current ion implanter according to claim 1, characterized in that: The guide arm (8) is provided with a positioning plate (15) on its outer side, and the positioning plate (15) is provided with a positioning ring on its outer side that is compatible with the structure of the ion beam guiding mechanism (9).
5. The uniformity enhancement mechanism for a high-current ion implanter according to claim 1, characterized in that: The rotating seat (5) has mounting shafts (11) on both sides of its top, and the drive seat (4) has mounting sleeves (10) on both sides of its bottom end that match the structure of the mounting shafts (11).
6. The uniformity enhancement mechanism for a high-current ion implanter according to claim 1, characterized in that: The surface of the support platform (2) is provided with multiple suction cups, and all the suction cups on the surface of the support platform (2) are connected to the vacuum system.