Interconnection conduction structure and semiconductor device
By introducing a transition layer into the via, the problems of material matching and sidewall damage between metal layers in semiconductor manufacturing processes are solved, improving the hole filling rate and consistency, and enhancing product performance.
Patent Information
- Application Number
- CN202422549444.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-22
- Publication Date
- 2025-12-09
- Estimated Expiration
- 2034-10-22
AI Technical Summary
In semiconductor manufacturing processes, material matching issues, chemical reactions, stress mismatch, lattice mismatch, and damage to the sidewalls of vias can occur during the conduction and isolation processes between metal layers, resulting in low and inconsistent via filling rates and affecting product performance.
Introducing a transition layer into the through-hole, by setting a first transition layer and a second transition layer, solves the material matching problem, protects the sidewalls of the through-hole, and improves the filling rate and consistency.
By introducing a transition layer, chemical reactions and stress mismatches between materials are avoided, the sidewalls of the through holes are protected, the hole filling rate and filling consistency are improved, and product performance is enhanced.
Smart Images
Figure CN223651408U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the semiconductor field, and in particular to an interconnection structure and a semiconductor device. Background Technology
[0002] In semiconductor manufacturing processes, it is sometimes necessary to isolate and conduct between different metal layers. Isolation between different metal layers can be achieved by filling an insulating dielectric layer between the two metal layers. Conductivity between different metal layers can be achieved by creating vias in the insulating dielectric layer and filling the vias with conductive materials.
[0003] Conductive materials are generally metals. When filling vias with metal, the following problems often arise: First, there may be material compatibility issues between the insulating medium and the conductive material. Contact between some materials can lead to chemical reactions, stress mismatch, lattice mismatch, and other problems. Second, the growth environment of the conductive material is often complex (e.g., high temperature, plasma, acids, alkalis), which can easily damage the sidewalls of the via, affecting the via morphology and critical dimensions, as well as the growth of the conductive material, ultimately impacting product performance. Third, material compatibility and the process environment during the via filling process can significantly affect the filling effect. Mismatch and other issues can result in low or inconsistent via filling rates, ultimately affecting product yield.
[0004] Therefore, how to solve the above-mentioned technical problems should be a key focus for those skilled in the art. Utility Model Content
[0005] The purpose of this application is to provide an interconnection structure and semiconductor device that removes the limitations of various material selections and material fabrication processes in the structure, while protecting and passivating the sidewalls of the vias and improving the via fill rate and fill consistency.
[0006] To address the aforementioned technical problems, this application provides an interconnection structure, comprising:
[0007] A first intermediate insulating layer having a through hole, the through hole penetrating the first intermediate insulating layer in the thickness direction;
[0008] The first structural layer located on the first side of the first intermediate insulating layer;
[0009] The second structural layer located on the second side of the first intermediate insulating layer;
[0010] A first filling structure located within the through hole is used to connect the first structural layer and the second structural layer;
[0011] A first transition layer is located on the sidewall of the through hole, and the transition layer is located between the first filling structure and the first intermediate insulating layer.
[0012] Optionally, it also includes at least one stacked structure, the stacked structure including a second intermediate insulating layer having through holes, a third structural layer, a second filling structure and a second transition layer;
[0013] The second intermediate insulating layer is located on the surface of the target structural layer away from the first intermediate insulating layer; the target structural layer is either the first structural layer or the second structural layer.
[0014] The third structural layer is located on the side of the second intermediate insulating layer away from the target structural layer;
[0015] The second filling structure is located in the through-hole in the second intermediate insulating layer and is used to connect the third structural layer and the target structural layer;
[0016] The second transition layer is located on the sidewall of the through-hole in the second intermediate insulating layer and is located between the second filling structure and the second intermediate insulating layer.
[0017] Optionally, the first transition layer has one layer.
[0018] Optionally, the first transition layer has at least two layers.
[0019] Optionally, the thickness of the first transition layer ranges from 20 nanometers to 200 nanometers.
[0020] Optionally, the cross-sectional shape of the first filling structure includes any one or any combination of rectangle, trapezoid, and hexagon.
[0021] Optionally, the height of the first transition layer is equal to the thickness of the first intermediate insulating layer.
[0022] Optionally, the first transition layer includes a metal layer and / or an insulating dielectric layer.
[0023] Optionally, the insulating dielectric layer includes any one or any combination of silicon nitride layer, silicon oxide layer, and silicon oxynitride layer.
[0024] This application also provides a semiconductor device including any of the interconnection structures described above.
[0025] The interconnection structure provided in this application includes: a first intermediate insulating layer having a through hole that penetrates the first intermediate insulating layer in the thickness direction; a first structural layer located on a first side of the first intermediate insulating layer; a second structural layer located on a second side of the first intermediate insulating layer; a first filling structure located within the through hole for connecting the first structural layer and the second structural layer; and a first transition layer located on the sidewall of the through hole, wherein the transition layer is located between the first filling structure and the first intermediate insulating layer.
[0026] As can be seen, the interconnect structure of this application has a through-hole in the first intermediate insulating layer, and a first transition layer on the sidewall of the through-hole. The first transition layer is located between the first filling structure and the first intermediate insulating layer within the through-hole, and the first filling structure can connect the first structural layer and the second structural layer. By setting the first transition layer, the matching problem between the first intermediate insulating layer and the first filling structure can be solved, avoiding stress mismatch, lattice mismatch, and chemical reactions between the first intermediate insulating layer and the first filling structure. The first transition layer also plays a protective and passivating role, preventing damage to the sidewall of the through-hole during the fabrication of the first filling structure, while ensuring the growth quality of the first filling structure. Furthermore, by setting the first transition layer, the material compatibility problem during the fabrication of the first filling structure in the through-hole can be solved, improving the filling rate and filling consistency of the through-hole.
[0027] In addition, this application also provides a semiconductor device having the above-mentioned advantages. Attached Figure Description
[0028] To more clearly illustrate the technical solutions of the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0029] Figure 1 This is a schematic diagram of an interconnection structure provided in an embodiment of this application. Figure 1 ;
[0030] Figure 2 This is a schematic diagram of an interconnection structure provided in an embodiment of this application. Figure 2 ;
[0031] Figures 3 to 7 This is a process flow diagram of the fabrication of an interconnection structure provided in an embodiment of this application;
[0032] In the figure: 1. First intermediate insulating layer; 2. First structural layer; 3. Second structural layer; 4. First filling structure; 5. First transition layer; 6. Second intermediate insulating layer; 7. Third structural layer; 8. Second filling structure; 9. Second transition layer; 10. Photolithography mask; 11. Through-hole. Detailed Implementation
[0033] To enable those skilled in the art to better understand the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0034] Many specific details are set forth in the following description in order to provide a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.
[0035] As described in the background section, the following problems typically arise when filling vias with metal: First, there are material compatibility issues between the insulating medium and the conductive material being filled. Contact between some materials can lead to chemical reactions, stress mismatch, lattice mismatch, and other problems. Second, the growth process of the conductive material is complex, easily causing damage to the via sidewalls, thus affecting the via morphology and critical dimensions, as well as the growth of the conductive material, ultimately impacting product performance. Third, material compatibility and the process environment during the via filling process significantly affect the filling effect. Furthermore, mismatch issues can result in low or inconsistent via filling rates, ultimately impacting product yield.
[0036] In view of this, this application provides an interconnection structure, please refer to... Figure 1 It can include:
[0037] A first intermediate insulating layer 1 having a through hole, the through hole penetrating the first intermediate insulating layer 1 in the thickness direction;
[0038] The first structural layer 2 is located on the first side of the first intermediate insulating layer 1;
[0039] The second structural layer 3 is located on the second side of the first intermediate insulating layer 1;
[0040] The first filling structure 4 located within the through hole is used to connect the first structural layer 2 and the second structural layer 3;
[0041] The first transition layer 5 is located on the sidewall of the through hole, and the transition layer is located between the first filling structure 4 and the first intermediate insulating layer 1.
[0042] The first intermediate insulating layer 1 has two opposing sides, with the first side and the second side being two opposite sides.
[0043] It should be noted that the number of through holes in the first intermediate insulating layer 1 is not limited in this embodiment, and depends on the situation. For example, the number of through holes can be 1, 2, 3, etc.
[0044] The first intermediate insulating layer 1 includes, but is not limited to, any one or any stack of silicon nitride (SiNx) layer, silicon oxide (SiOx) layer, silicon oxynitride (SiON) layer, α-Si layer, PI (Polyimide) layer, and amorphous carbon layer.
[0045] The first structural layer 2 can be a conductive layer or a thermally conductive layer.
[0046] It should be noted that the first structural layer 2 is not limited in this embodiment and can be set by the user. For example, the first structural layer 2 can be any one of titanium (Ti) layer, aluminum (Al) layer, and nickel (Ni) layer.
[0047] The second structural layer 3 can be a conductive layer or a thermally conductive layer, the same type as the first structural layer 2.
[0048] It should be noted that the second structural layer 3 is not limited in this embodiment and can be set by the user. For example, the second structural layer 3 can be any one of tungsten (W) layer, titanium (Ti) layer, titanium nitride (TiN) layer, copper (Cu) layer, and gold (Au) layer.
[0049] The first filling structure 4 can be a metal structure, and the material of the metal structure includes, but is not limited to, any one or any combination of tungsten (W), titanium (Ti), titanium nitride (TiN), copper (Cu), and gold (Au).
[0050] The first transition layer 5 surrounds the sidewalls of the through-holes in the first intermediate insulating layer 1, and the area in the through-holes excluding the first transition layer 5 is the first filling structure 4. The first filling structure 4 may be located only in the through-holes in the first intermediate insulating layer 1, such as... Figure 1 As shown, the first structural layer 2 and the second structural layer 3 are located on two opposite surfaces of the first intermediate insulating layer 1, respectively; or, they can be located both in the through holes of the first intermediate insulating layer 1 and on the platform of the first intermediate insulating layer 1. In this case, the first structural layer 2 is located on the lower surface of the first intermediate insulating layer 1, and the second structural layer 3 is located on the upper surface of the first filling structure 4.
[0051] It should be noted that the number of layers in the first transition layer 5 is not limited in this embodiment and depends on the situation.
[0052] As one possible implementation, the first transition layer 5 has one layer.
[0053] As another possible implementation, the first transition layer 5 has at least two layers. For example, the first transition layer 5 can have two, three, or four layers.
[0054] It should also be noted that the structure of the first transition layer 5 is not limited in this embodiment and depends on the circumstances. As one possible implementation, the first transition layer 5 includes, but is not limited to, a metal layer and / or an insulating dielectric layer.
[0055] When the first transition layer 5 has only one layer, the first transition layer 5 can be a metal layer or an insulating dielectric layer.
[0056] When the number of layers in the first transition layer 5 is at least two, the first transition layer 5 can be entirely metal layers, or the first transition layer 5 can be entirely insulating dielectric layers, or the first transition layer 5 can be a metal layer and an insulating dielectric layer.
[0057] The insulating dielectric layer includes, but is not limited to, any one or any combination of silicon nitride layer, silicon oxide layer, and silicon oxynitride layer.
[0058] The first transition layer 5 may or may not transmit signals; its main function is isolation.
[0059] The material selection for the first transition layer 5 must match both the first intermediate insulating layer 1 and the first filling structure 4.
[0060] The first transition layer 5 can be made of multiple layers to respectively match the first intermediate insulating layer 1 and the first filling structure 4.
[0061] The material of the first transition layer 5 cannot be selected in the same way as the first intermediate insulating layer 1 and the first filling structure 4, even though the selection ranges overlap.
[0062] It should also be noted that the shape of the first transition layer 5 is not limited in this embodiment and can be determined as appropriate.
[0063] As one possible implementation, the cross-sectional shape of the first filling structure 4 includes, but is not limited to, any one or any combination of rectangle, trapezoid, and hexagon.
[0064] When the cross-sectional shape of the first filling structure 4 is rectangular, the corresponding shape of the first filling structure 4 can be a cylinder; when the cross-sectional shape of the first filling structure 4 is trapezoidal, the corresponding shape of the first filling structure 4 can be a frustum or a truncated pyramid, etc.
[0065] It should be noted that the thickness of the first transition layer 5 in this embodiment is not limited and can be set by the user.
[0066] As one possible implementation, the thickness of the first transition layer 5 ranges from 20 nanometers to 200 nanometers, including the endpoint values. For example, the thickness of the first transition layer 5 can be 20 nanometers, 50 nanometers, 80 nanometers, 100 nanometers, 150 nanometers, 180 nanometers, 200 nanometers, etc.
[0067] If the thickness of the first transition layer 5 is too small, its protective and passivation effects will be weak, increasing the probability of damage to the sidewalls of the vias. Furthermore, the compatibility issue between the first filling structure 4 and the first intermediate insulating layer 1 will be only partially resolved. If the thickness of the first transition layer 5 is too large, the first filling structure 4 will be too small, potentially affecting the connectivity between the first structural layer 2 and the second structural layer 3.
[0068] In this embodiment, the interconnected structure has a through-hole in the first intermediate insulating layer 1, and a first transition layer 5 on the sidewall of the through-hole. The first transition layer 5 is located between the first filling structure 4 and the first intermediate insulating layer 1 within the through-hole. The first filling structure 4 can connect the first structural layer 2 and the second structural layer 3. By setting the first transition layer 5, the matching problem between the first intermediate insulating layer 1 and the first filling structure 4 can be solved, avoiding stress mismatch, lattice mismatch, and chemical reactions between the first intermediate insulating layer 1 and the first filling structure 4. The first transition layer 5 also plays a protective and passivating role, preventing damage to the sidewall of the through-hole during the fabrication of the first filling structure 4, while ensuring the growth quality of the first filling structure 4. Furthermore, by setting the first transition layer 5, material compatibility problems during the fabrication of the first filling structure 4 in the through-hole can be solved, improving the filling rate and filling consistency of the through-hole.
[0069] Based on the above embodiments, in one embodiment of this application, such as Figure 2 As shown, the interconnection structure may further include at least one stacked structure, the stacked structure including a second intermediate insulating layer 6 with through holes, a third structural layer 7, a second filling structure 8, and a second transition layer 9.
[0070] The second intermediate insulating layer 6 is located on the surface of the target structural layer away from the first intermediate insulating layer 1; the target structural layer is either the first structural layer 2 or the second structural layer 3;
[0071] The third structural layer 7 is located on the side of the second intermediate insulating layer 6 away from the target structural layer;
[0072] The second filling structure 8 is located in the through hole in the second intermediate insulating layer 6 and is used to connect the third structural layer 7 and the target structural layer;
[0073] The second transition layer 9 is located on the sidewall of the through hole in the second intermediate insulating layer 6, and is located between the second filling structure 8 and the second intermediate insulating layer 6.
[0074] In this embodiment, the number of stacked structures is not limited and depends on the situation. For example, the number of stacked structures can be one, two, three, etc.
[0075] When there are two or more stacked structures, the second stacked structure can be stacked on top of the first stacked structure, the third stacked structure can be stacked on top of the second stacked structure, and so on.
[0076] The second intermediate insulating layer 6 includes, but is not limited to, any one or any stack of silicon nitride (SiNx) layer, silicon oxide (SiOx) layer, silicon oxynitride (SiON) layer, α-Si layer, PI (Polyimide) layer, and amorphous carbon layer.
[0077] The third structural layer 7 can be a conductive layer or a thermally conductive layer.
[0078] It should be noted that the third structural layer 7 is not limited in this embodiment and can be set arbitrarily. For example, the third structural layer 7 can be any one of titanium (Ti) layer, aluminum (Al) layer, and nickel (Ni) layer.
[0079] The second filling structure 8 can be a metal structure, and the material of the metal structure includes, but is not limited to, any one or any combination of tungsten (W), titanium (Ti), titanium nitride (TiN), copper (Cu), and gold (Au).
[0080] The second transition layer 9 surrounds the sidewalls of the through-holes in the second intermediate insulating layer 6. The area within the through-holes of the second intermediate insulating layer 6, excluding the second transition layer 9, constitutes the second filling structure 8. The second filling structure 8 may be located solely within the through-holes of the second intermediate insulating layer 6, such as... Figure 2 As shown, or, it can be located both in the through-hole of the second intermediate insulating layer 6 and on the platform of the second intermediate insulating layer 6. In this case, the third structural layer 7 is located on the upper surface of the second filling structure 8.
[0081] It should be noted that the number of layers of the second transition layer 9 is not limited in this embodiment and depends on the situation.
[0082] In one possible implementation, the second transition layer 9 has one layer.
[0083] As another possible implementation, the second transition layer 9 has at least two layers. For example, the second transition layer 9 can have two, three, or four layers.
[0084] It should also be noted that the structure of the second transition layer 9 is not limited in this embodiment and depends on the circumstances. As one possible implementation, the second transition layer 9 includes, but is not limited to, a metal layer and / or an insulating dielectric layer.
[0085] When the number of layers of the second transition layer 9 is one, the second transition layer 9 can be a metal layer or an insulating dielectric layer.
[0086] When the number of layers of the second transition layer 9 is at least two, the second transition layer 9 can be entirely metal layers, or the second transition layer 9 can be entirely insulating dielectric layers, or the second transition layer 9 can be a metal layer and an insulating dielectric layer.
[0087] The insulating dielectric layer includes, but is not limited to, any one or any combination of silicon nitride layer, silicon oxide layer, and silicon oxynitride layer.
[0088] It should also be noted that the shape of the second transition layer 9 is not limited in this embodiment and can be determined as appropriate.
[0089] As one possible implementation, the cross-sectional shape of the second filling structure 8 includes, but is not limited to, any one or any combination of rectangle, trapezoid, and hexagon.
[0090] When the cross-sectional shape of the second filling structure 8 is rectangular, the corresponding shape of the second filling structure 8 can be a cylinder; when the cross-sectional shape of the second filling structure 8 is trapezoidal, the corresponding shape of the second filling structure 8 can be a frustum or a truncated pyramid, etc.
[0091] It should be noted that the thickness of the second transition layer 9 in this embodiment is not limited and can be set by the user.
[0092] As one possible implementation, the thickness of the second transition layer 9 ranges from 20 nanometers to 200 nanometers, including the endpoint values. For example, the thickness of the second transition layer 9 can be 20 nanometers, 50 nanometers, 80 nanometers, 100 nanometers, 150 nanometers, 180 nanometers, 200 nanometers, etc.
[0093] If the thickness of the second transition layer 9 is too small, its protective and passivation effects will be weak, increasing the probability of damage to the via sidewalls. Furthermore, the compatibility issue between the second filling structure 8 and the second intermediate insulating layer 6 will be only partially resolved. If the thickness of the second transition layer 9 is too large, the second filling structure 8 will be too small, potentially affecting the connectivity between the target structural layer and the third structural layer 7.
[0094] Based on the above embodiments, in one embodiment of this application, the height of the second transition layer 9 is equal to the thickness of the second intermediate insulating layer 6, so that the second transition layer 9 is distributed between the second filling structure 8 and the second intermediate insulating layer 6, so as to avoid stress mismatch, lattice mismatch and chemical reaction problems, while achieving better protection and passivation effect, avoiding damage to the sidewall of the through hole when making the second filling structure 8, and further improving the filling rate and filling consistency of the through hole.
[0095] Based on any of the above embodiments, in one embodiment of this application, the height of the first transition layer 5 is equal to the thickness of the first intermediate insulating layer 1, so that the first transition layer 5 is distributed between the first filling structure 4 and the first intermediate insulating layer 1, so as to avoid stress mismatch, lattice mismatch and chemical reaction problems, while achieving better protection and passivation effect, avoiding damage to the sidewall of the through hole when making the first filling structure 4, and further improving the filling rate and filling consistency of the through hole.
[0096] The following is based on Figure 1 Taking the interconnection structure shown as an example, the manufacturing process of the interconnection structure will be explained.
[0097] Step 1, as follows Figure 3 As shown, a first intermediate insulating layer 1 is fabricated on the first structural layer 2, and a photomask 10 is fabricated on the first intermediate insulating layer 1. The photomask 10 can be a hard mask made of photoresist PR or other materials.
[0098] Step 2, as follows Figure 4 As shown, a via 11 is formed on the first intermediate insulating layer 1 by photolithography and etching technology. Both photolithography and etching use conventional processes in the prior art.
[0099] Step 3, as follows Figure 5 As shown, the first transition layer 5 is deposited, and the deposition methods include, but are not limited to, CVD (Chemical Vapor Deposition), ALD (Atomic Layer Deposition), evaporation, sputtering, electroplating and other film expansion processes.
[0100] Step 4, as follows Figure 6 As shown, the first transition layer 5 is etched to remove the first transition layer 5 on the mesa of the first intermediate insulating layer 1 and at the bottom of the via. The etching methods typically use PE (Plasma Etching), RIE (reaction etching), HDP, ICP (Inductively Coupled Plasma Etching) and other etching processes.
[0101] Step 5, as follows Figure 7 As shown, a filling material is deposited in the through-hole to form a first filled structure 4;
[0102] Step 6, as follows Figure 1 As shown, the filler on the mesa is removed using CMP or etching processes to form the first filler structure 4, and then the second structure layer 3 is deposited to form the connection between the second structure layer 3, the first filler structure 4, and the first structure layer 2.
[0103] It should be noted that the filler on the platform can also be deposited directly in step 6 without removing it.
[0104] This application also provides a semiconductor device including the interconnection structure described in any of the above embodiments.
[0105] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.
[0106] The interconnection structure and semiconductor device provided in this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the solution and core ideas of this application. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of this application.
Claims
1. An interconnection and conduction structure, characterized in that, include: A first intermediate insulating layer (1) having a through hole (10) that penetrates the first intermediate insulating layer (1) in the thickness direction. The first structural layer (2) is located on the first side of the first intermediate insulating layer (1); The second structural layer (3) is located on the second side of the first intermediate insulating layer (1); The first filling structure (4) located in the through hole (10) is used to connect the first structural layer (2) and the second structural layer (3); the lower surface of the first filling structure (4) is in direct contact with the first structural layer (2), and the upper surface of the first filling structure (4) is in direct contact with the second structural layer (3); The first transition layer (5) is located on the sidewall of the through hole (10), and the transition layer is located between the first filling structure (4) and the first intermediate insulating layer (1); The first transition layer (5) is distributed around the sidewall of the through hole (10) in the first intermediate insulating layer (1), and the area in the through hole (10) other than the first transition layer (5) is the first filling structure (4).
2. The interconnection structure as described in claim 1, characterized in that, It also includes at least one stacked structure, the stacked structure comprising a second intermediate insulating layer (6) having a through hole (10), a third structural layer (7), a second filling structure (8), and a second transition layer (9). The second intermediate insulating layer (6) is located on the surface of the target structural layer away from the first intermediate insulating layer (1); the target structural layer is either the first structural layer (2) or the second structural layer (3). The third structural layer (7) is located on the side of the second intermediate insulating layer (6) away from the target structural layer; The second filling structure (8) is located in the through hole (10) in the second intermediate insulating layer (6) for connecting the third structural layer (7) and the target structural layer; The second transition layer (9) is located on the sidewall of the through hole (10) in the second intermediate insulating layer (6) and between the second filling structure (8) and the second intermediate insulating layer (6).
3. The interconnection structure as described in claim 1, characterized in that, The first transition layer (5) has one layer.
4. The interconnection structure as described in claim 1, characterized in that, The first transition layer (5) has at least two layers.
5. The interconnection structure as described in claim 1, characterized in that, The thickness of the first transition layer (5) ranges from 20 nanometers to 200 nanometers.
6. The interconnection structure as described in claim 1, characterized in that, The cross-sectional shape of the first filling structure (4) includes any one or any combination of rectangle, trapezoid, and hexagon.
7. The interconnection structure as described in claim 1, characterized in that, The height of the first transition layer (5) is equal to the thickness of the first intermediate insulating layer (1).
8. The interconnection structure as described in any one of claims 1 to 7, characterized in that, The first transition layer (5) includes a metal layer and / or an insulating dielectric layer.
9. The interconnection structure as described in claim 8, characterized in that, The insulating dielectric layer includes any one or any combination of silicon nitride layer, silicon oxide layer, and silicon oxynitride layer.
10. A semiconductor device, characterized in that, Includes the interconnection structure as described in any one of claims 1 to 9.