Power module circuit and power module

Abstract

The utility model relates to the technical field of power devices, in particular to a power module circuit and a power module. The filter comprises at least two groups of filter units (7) and two groups of power chip units (4), the filter units (7) and the power chip units (4) are in one-to-one correspondence, and capacitors (8) and inductors (9) which are connected in parallel are connected between the filter units (7) and the power chip units (4). According to the utility model, the power module circuit is arranged in the power module, and the filtering unit is directly integrated in the module, so that the loss of the module and the electric stress of a chip can be effectively reduced, higher switching frequency can be adapted, a better power output level can be exerted, and higher robustness can be realized; and meanwhile, the driver design optimization and the cost reduction of the user side are facilitated.

Description

TECHNICAL FIELD

[0001] The utility model relates to power device technical field especially relates to a power module circuit and power module. BACKGROUND

[0002] At present, the inside of the mainstream power module in the market generally only contains the chip and auxiliary material required by the main loop, based on this packaging condition, the design optimization space of the internal loss and electric stress of the module is limited. Therefore, customers have to consider adding auxiliary circuits to reduce chip loss and electric stress when designing the driving system. With the development of the third generation semiconductor, the switching frequency of the chip is getting higher and higher, and the electric stress challenge that the chip bears is also increasing. In order to reduce the electric stress, the method of integrating resistance, capacitance and inductance in the module is appeared, but it is generally clamping protection. Although the method of clamping protection or using gate resistance can effectively reduce the electric stress, it will affect the switching speed and increase the dynamic loss.

[0003] Such as prior art CN202223280136.1, it discloses a low inductance SiC power module packaging structure, including bottom plate and frame, bottom plate bonding connection in the bottom of frame, the top of bottom plate is fixedly installed with substrate through connecting layer, the top of substrate is equipped with buffer layer, the top of buffer layer is installed with SiC chip through connecting layer, SiC chip is connected through metal key between, and the same metal key is connected with support strip on both sides of the top of buffer layer, support strip can be fixedly installed on the top of frame through screw, the top of bottom plate is located below connecting layer and is equipped with multiple groups of horizontal through bottom plate's heat dissipation groove, connecting layer is solder, the bottom of SiC chip is welded with the top of buffer layer. UTILITY MODEL CONTENTS

[0004] The utility model discloses in view of prior art the method of clamping protection or using gate resistance although can effectively reduce electric stress, but will influence switching speed, increase the shortcoming of dynamic loss, and a kind of power module circuit and power module are presented.

[0005] In order to solve the above technical problem, the utility model is solved by the following technical scheme:

[0006] A kind of power module circuit, it includes at least two groups of filter units and two groups of power chip groups, and filter unit and power chip group one to one, and the capacitor and inductance of mutual parallel connection are connected between filter unit and power chip group.

[0007] As preferred, the filter unit comprises diodes D1, D2 and field effect tubes P1, P2, the diode D1 is in series with the field effect tube P1, the cathode of the diode D1 is connected with the drain of the field effect tube P1, the diode D2 is in series with the field effect tube P2, the anode of the diode D2 is connected with the source of the field effect tube P2; the anode of the diode D1 and the cathode of the diode D2 are connected with the auxiliary terminal T1 and a capacitor, the other end of the capacitor is connected with the main power terminal T3, the gate of the field effect tubes P1, P2 is connected with the auxiliary terminal, the inductance is connected between the source of the field effect tube P1 and the drain of the field effect tube P2, the other end of the inductance is connected with the main power terminal T3; the power chip set comprises diodes D3, D4 and field effect tubes P3, P4, the anode of the diode D3 is connected with the drain of the field effect tube P3, the cathode of the diode D3 is connected with the source of the field effect tube P3, the anode of the diode D4 is connected with the source of the field effect tube P4, the cathode of the diode D4 is connected with the drain of the field effect tube P4, the main power terminal T3 is connected in the middle of the power chip, the gate of the field effect tubes P3, P4 is connected with the auxiliary terminal; the drain of the field effect tube P3 and the source of the field effect tube P4 are both connected with the main power terminal, corresponding to the main power terminals T1 and T2 respectively.

[0008] The power module circuit is directly integrated in the power module, which can effectively reduce the loss of the module and the chip electrical stress, can adapt to higher switching frequency and exert better power output level and realize higher robustness, and is also beneficial to the driving design optimization and cost reduction of the user end.

[0009] In order to solve the above technical problems, the application also provides a power module, which comprises a shell, a PCB plate arranged in the shell, and the power module circuit arranged on the PCB plate. The additional PCB circuit board is in parallel connection with the output end of the power module, and is provided with main passive switching devices, capacitors and inductors. The designed power module can adapt to higher switching frequency and exert better power output level and realize higher robustness.

[0010] As preferred, the shell is connected with a heat dissipation plate, the shell cavity is sequentially provided with a cover plate, a PCB plate, a power chip set and a ceramic substrate from top to bottom, the upper and lower surfaces of the ceramic substrate are both provided with a connecting layer, and the lower surface connecting layer of the ceramic substrate is connected with the heat dissipation plate; the power chip set is connected through bonding wires; the PCB plate and the electronic components or wiring on the ceramic substrate are kept with a certain electrical safety gap.

[0011] The upper surface connecting layer of the ceramic substrate is connected with the power chip set, and the upper surface connecting layer of the ceramic substrate is connected with the PCB plate through a first auxiliary terminal.

[0012] As preferred, the main power terminals are arranged at both ends of the shell, and the main power terminals are electrically connected to the circuit board and the chip inside the module by bonding wires.

[0013] As preferred, the sealing cover plate is a potting type epoxy resin. The epoxy resin has a certain structural strength, and also has the functions of sealing protection and moisture isolation. If there is no epoxy, an additional non-sealing protective cover needs to be customized for the module, and the protective cover can be physically connected to the main body of the module by buckling, and openings are reserved for auxiliary terminals on the module.

[0014] As preferred, the heat dissipation plate is connected with a plurality of heat dissipation Pin-Fins on one side, and the Pin-Fins can further enhance the heat dissipation function of the power module.

[0015] The utility model discloses a power module, which has the following remarkable technical effects:

[0016] The utility model discloses a power module, which has the following remarkable technical effects: BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 It is the power module circuit schematic diagram of the utility model.

[0018] Figure 2 It is the power module structure schematic diagram of the utility model.

[0019] Figure 3 It is the circuit filter unit and the capacitor inductor circuit diagram of the utility model.

[0020] The part names pointed by the numbers in the drawings are as follows: 1 - shell, 2 - sealing cover plate, 3 - PCB board, 4 - power chip set, 5 - ceramic substrate, 51 - upper surface connecting layer of ceramic substrate, 52 - lower surface connecting layer of ceramic substrate, 6 - heat dissipation plate, 61 - heat dissipation Pin-Fin, 31 - main power terminal, 32 - auxiliary terminal, 7 - filter unit, 8 - capacitor, 9 - inductor. DETAILED DESCRIPTION

[0021] The utility model will be described in further detail in combination with the drawings and examples.

[0022] Example 1

[0023] The power module circuit comprises at least two groups of filter units and at least two groups of power chip sets, and the filter units and the power chip sets correspond to each other, and the filter units and the power chip sets are connected with each other with a capacitor and an inductor in parallel.

[0024] The filter unit comprises diodes D1 and D2 and field effect tubes P1 and P2, in the filter chip set 1, the diode D1 and the field effect tube P1 are in series, the cathode of the diode D1 is connected with the drain of the field effect tube P1, in the filter chip set 2, the diode D2 and the field effect tube P2 are in series, the anode of the diode D2 is connected with the source of the field effect tube P2; the anode of the diode D1 and the cathode of the diode D2 are connected with an auxiliary terminal T1 and a capacitor, the other end of the capacitor is connected with a main power terminal T3, the gate of the field effect tube P1 and the gate of the field effect tube P2 are connected with an auxiliary terminal, the source of the field effect tube P1 and the drain of the field effect tube P2 are connected with an inductor, the other end of the inductor is connected with the main power terminal T3; the power chip set comprises diodes D3 and D4 and field effect tubes P3 and P4, in the power chip set 1, the anode of the diode D3 is connected with the drain of the field effect tube P3, the cathode of the diode D3 is connected with the source of the field effect tube P3, in the power chip set 2, the anode of the diode D4 is connected with the source of the field effect tube P4, the cathode of the diode D4 is connected with the drain of the field effect tube P4, the main power terminal T3 is connected between the power chip set 1 and the power chip set 2, and the gate of the field effect tube P3 and the gate of the field effect tube P4 are connected with an auxiliary terminal; the drain of the field effect tube P3 and the source of the field effect tube P4 are both connected with a main power terminal, and correspond to the main power terminals T1 and T2 respectively.

[0025] The power module circuit is integrated in the power module, which can effectively reduce the loss of the module and the chip electrical stress, adapt to higher switching frequency, exert better power output level and realize higher robustness, and is also beneficial to the driving design optimization of the user end and cost reduction.

[0026] Embodiment 2

[0027] Based on the embodiment 1, the power module comprises a shell 1, the shell 1 is provided with a PCB board 3, and the power module circuit is arranged on the PCB board 3.

[0028] The power module circuit comprises at least two groups of filter units and at least two groups of power chip sets, and the filter units and the power chip sets correspond to each other, and the filter units and the power chip sets are connected with each other with a capacitor and an inductor in parallel.

[0029] The filter unit 7 comprises diodes D1, D2 and field effect tubes P1, P2, in the filter chip set 1, the diode D1 is in series with the field effect tube P1, the cathode of the diode D1 is connected with the drain of the field effect tube P1, in the filter chip set 2, the diode D2 is in series with the field effect tube P2, the anode of the diode D2 is connected with the source of the field effect tube P2; the anode of the diode D1 and the cathode of the diode D2 are connected with the auxiliary terminal T1 and the capacitor 8, the other end of the capacitor 8 is connected with the main power terminal T3, the gate of the field effect tubes P1, P2 is connected with the auxiliary terminal 32, the source of the field effect tube P1 and the drain of the field effect tube P2 are connected with the inductor 9, the other end of the inductor 9 is connected with the main power terminal T3; the power chip set comprises diodes D3, D4 and field effect tubes P3, P4, in the power chip set 1, the anode of the diode D3 is connected with the drain of the field effect tube P3, the cathode of the diode D3 is connected with the source of the field effect tube P3, in the power chip set 2, the anode of the diode D4 is connected with the source of the field effect tube P4, the cathode of the diode D4 is connected with the drain of the field effect tube P4, the main power terminal T3 is connected between the power chip sets 1 and 2, the gate of the field effect tubes P3, P4 is connected with the auxiliary terminal 32; the drain of the field effect tube P3 and the source of the field effect tube P4 are both connected with the main power terminal 31, corresponding to the main power terminals T1 and T2 respectively. By the power module circuit provided and integrated in the power module, the loss of the module and the chip electrical stress can be effectively reduced, the higher switching frequency can be adapted, the better power output level can be exerted and the higher robustness can be realized.

[0030] An additional PCB circuit board is arranged in parallel with the output end of the power module, and main passive switching devices, capacitors and inductors are arranged on the circuit board, the designed power module can adapt to higher switching frequency, exert better power output level and realize higher robustness, and is also beneficial to the driving design optimization of the user end and cost reduction.

[0031] The shell 1 is connected with the heat dissipation plate 6, the cavity of the shell 1 is sequentially provided from top to bottom with the cover plate 2, the PCB plate 3, the power chip set 4 and the ceramic substrate 5, the upper and lower surfaces of the ceramic substrate 5 are both provided with a connecting layer, and the lower surface connecting layer 52 of the ceramic substrate is connected with the heat dissipation plate 6; the power chip sets 4 are connected with each other through bonding wires.

[0032] The connecting layer on the upper surface of the ceramic substrate 5 is connected with the power chip set 4, and the connecting layer on the upper surface of the ceramic is connected with the first auxiliary terminal through the PCB plate 3. The PCB plate and the electronic components or wiring on the ceramic substrate 5 are kept with a certain electrical safety gap; the gap area in the module is filled with silica gel; the shell 1 is provided with the main power terminals at both ends, and the main power terminals are connected with the power chip or the ceramic lining plate circuit layer through the bonding wires.

[0033] The sealing cover plate 2 is a pouring type epoxy resin. The epoxy resin has a certain structural strength, and also has the functions of sealing protection and moisture isolation.

[0034] The heat dissipation plate 6 is connected with a plurality of heat dissipation Pin-Fins 61. The Pin-Fins can further enhance the heat dissipation function of the power module.

[0035] Example 3

[0036] On the basis of the above examples, the difference between this embodiment and example 2 is that the power chip groups 4 are connected with each other through aluminum strips, and the main power terminals are electrically connected with the power chips or the circuit layer of the ceramic backing plate through aluminum strips.

[0037] Example 4

[0038] On the basis of the above examples, the difference between this embodiment and example 2 is that the power chip groups 4 are connected with each other through copper strips, and the main power terminals are electrically connected with the power chips or the circuit layer of the ceramic backing plate through copper strips.

[0039] Example 5

[0040] On the basis of the above examples, the difference between this embodiment and example 2 is that the power chip groups 4 are connected with each other through copper strips, and the main power terminals are electrically connected with the power chips or the circuit layer of the ceramic backing plate through copper strips.

[0041] Example 6

[0042] On the basis of the above examples, the difference between this embodiment and example 2 is that the power chip groups 4 are connected with each other through copper strips, and the main power terminals are electrically connected with the power chips or the circuit layer of the ceramic backing plate through copper strips.

[0043] Example 7

[0044] On the basis of the above examples, the sealing cover plate 2 of this embodiment does not adopt the pouring epoxy form, but adopts a non-sealing protective cover specially customized according to the module structure. The protective cover 2 can be physically connected with the module shell 1 through buckling, and an opening is reserved for the auxiliary terminal 32 on the module.

[0045] Example 8

[0046] On the basis of the above examples, the heat dissipation plate 6 of this embodiment can cancel the Pin-Fin to adapt to more application scenarios.

Claims

1. A power module circuit, characterized by, The power module circuit comprises at least two groups of filter units (7) and at least two groups of power chip sets (4), and the filter units (7) correspond to the power chip sets (4) one by one.

2. A power module comprising a housing (1) in which a PCB (3) is arranged, characterized in that The power module circuit comprises at least two groups of filter units (7) and at least two groups of power chip sets (4), and the filter units (7) correspond to the power chip sets (4) one by one.

3. A power module according to claim 2, characterised in that The power module circuit comprises at least two groups of filter units (7) and at least two groups of power chip sets (4), and the filter units (7) correspond to the power chip sets (4) one by one. The power module circuit comprises at least two groups of filter units (7) and at least two groups of power chip sets (4), and the filter units (7) correspond to the power chip sets (4) one by one.

4. A power module according to claim 2, characterised in that The power module circuit comprises at least two groups of filter units (7) and at least two groups of power chip sets (4), and the filter units (7) correspond to the power chip sets (4) one by one.

5. A power module according to claim 2, characterised in that The power module circuit comprises at least two groups of filter units (7) and at least two groups of power chip sets (4), and the filter units (7) correspond to the power chip sets (4) one by one.

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