Shielding frame supporting piece and chemical vapor deposition device
By setting air guide holes and notches on the support strip of the shielding frame support, the uniform distribution of cleaning gas in the PECVD device is achieved, solving the problem of uneven cleaning and improving the cleaning effect and substrate quality.
Patent Information
- Application Number
- CN202422661604.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-31
- Publication Date
- 2025-12-12
- Estimated Expiration
- 2034-10-31
AI Technical Summary
The existing shielding frame and shielding frame support structure cannot achieve uniform extraction of cleaning gas during the cleaning process, resulting in poor cleaning effect.
Design a shielding frame support component, including four support bars forming notches at the four corners of the reaction chamber, and setting gas guide holes on the support bars to guide clean gas free radicals to the side walls and corners of the chamber, ensuring uniform gas distribution.
It improves the uniformity of cleaning gas extraction, enhances the cleaning effect on the side walls and corners of the chamber, reduces the impact of particulate contaminants on the substrate, and improves the substrate yield.
Smart Images
Figure CN223660198U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the field of substrate processing equipment, especially to a shielding frame support and a chemical vapor deposition device. BACKGROUND
[0002] In a plasma enhanced chemical vapor deposition (PECVD) process, the edge and back of a glass substrate and the interior components of the chamber must be protected from deposition of material at these locations. An edge cover can be placed around the substrate to prevent process gases or plasma from reaching the back of the substrate. When the process is performed, the substrate is transferred from a transfer port on the sidewall of the reaction chamber to a susceptor on the bottom of the reaction chamber, and the edge cover is placed in the reaction chamber above the susceptor by the edge cover support, then when the susceptor is moved to a higher process position, the edge cover is lifted and surrounds the edge of the substrate, thereby preventing deposition on the back of the substrate.
[0003] When the reaction chamber is cleaned, the susceptor is lowered to a cleaning position, the edge cover contacts the susceptor and the edge cover support, and the cleaning gas radicals are guided into the reaction chamber, the edge cover blocks the gap between the susceptor and the edge cover support, forcing the cleaning gas radicals to go to the corners of the reaction chamber. Since the edge cover support does not extend to the corners, the cleaning gas radicals are discharged from the reaction chamber after being guided to the corner position of the reaction chamber by the exhaust pump.
[0004] However, the above-mentioned edge cover and edge cover support structure still does not meet the requirements of current process technology in terms of the uniformity of the cleaning gas during the cleaning process. SUMMARY
[0005] The utility model discloses a shielding frame support and a chemical vapor deposition device for improving the uniformity of cleaning gas pumping and improving the cleaning effect.
[0006] In order to achieve the above-mentioned purpose, the utility model discloses the following technical scheme:
[0007] A shielding frame support is arranged in a reaction chamber of a chemical vapor deposition device, and is used for providing support for a shielding frame. The reaction chamber includes a chamber sidewall surrounded by four walls, wherein a transfer port is arranged on a first wall. The shielding frame support includes four support strips, which are respectively arranged on the four walls and are separated from each other. In addition to the support strip on the first wall, the other support strips are provided with a plurality of gas guide holes in the extension direction thereof.
[0008] Optionally, the gas flow through the gas guide holes gradually decreases from the center to the two ends of the support strip.
[0009] Optionally, the size of the plurality of gas guide holes gradually decreases from the center to the two ends of the support strip.
[0010] Optionally, the diameter of the gas guiding hole is greater than 3mm.
[0011] Optionally, the diameter of the gas guiding hole is in the range of 4mm~20mm.
[0012] Optionally, the distribution of the gas guiding holes gradually becomes sparse from the center to the two ends of the support bar.
[0013] Optionally, the gas guiding holes are uniformly distributed on the support bar.
[0014] Optionally, the upper surface of the support bar is provided with a plurality of pads for supporting the shielding frame.
[0015] Optionally, the material of the pad is ceramic.
[0016] Optionally, the pad and the shielding frame are in line contact.
[0017] Optionally, the vertical distance between the plane where the top of the pad is located and the upper surface of the support bar is in the range of 0.2mm~1mm.
[0018] A chemical vapor deposition device, comprising:
[0019] a reaction chamber;
[0020] a susceptor for carrying a substrate, the susceptor being located at the bottom of the reaction chamber and being movable between a process position and a cleaning position;
[0021] a shielding frame for covering the edge area of the susceptor when the susceptor is in the process position;
[0022] a shielding frame support as described in any of the above, disposed in the reaction chamber, for supporting the shielding frame.
[0023] Optionally, the shielding frame support and the susceptor jointly support the shielding frame when the susceptor is in the cleaning position.
[0024] Compared with the prior art, the utility model has the following advantages:
[0025] The shielding frame support provided by the utility model forms a gap at four corner positions of the reaction cavity through four support strips, forms an air flow channel between the gap and the side wall of the reaction cavity, guides the cleaning gas radicals to the four corners, sets up a gas guide hole on the support strip, guides the cleaning gas radicals to the cavity side wall, changes the flow direction of the cleaning gas radicals, makes the cleaning gas radicals uniformly guided to the cavity side wall and the four corners, improves the uniformity of the cleaning gas exhaust, thereby improving the cleaning effect of the cavity side wall and the corners. BRIEF DESCRIPTION OF DRAWINGS
[0026] In order to more clearly illustrate the technical scheme of the utility model, the following will briefly introduce the drawings needed to be used in the description, obviously, the drawings in the following description are one embodiment of the utility model, for the ordinary skilled in the art, under the premise of not paying the creative labor, can also obtain other drawings according to these drawings:
[0027] Figure 1 The structural diagram of a chemical vapor deposition device provided by one embodiment of the utility model in a process position is shown in the figure;
[0028] Figure 2 The structural diagram of a chemical vapor deposition device provided by one embodiment of the utility model in a cleaning position is shown in the figure;
[0029] Figure 3 The schematic diagram of the support strip provided by one embodiment of the utility model installed on the cavity side wall is shown in the figure;
[0030] Figure 4 The schematic diagram of the cushion block and the shielding frame is shown in the figure. DETAILED DESCRIPTION
[0031] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates the proposed solution of this utility model. The advantages and features of this utility model will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, intended only to facilitate and clearly illustrate the embodiments of this utility model. Please refer to the drawings to make the objectives, features, and advantages of this utility model more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of this utility model. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this utility model, should still fall within the scope of the technical content disclosed in this utility model.
[0032] This embodiment provides a shielding frame support and a chemical vapor deposition (CVD) apparatus, wherein the CVD apparatus is used for thin film deposition processes on glass substrates. Combined with... Figure 1 , Figure 2 and Figure 3 As shown, the chemical vapor deposition apparatus provided in this embodiment includes: a reaction chamber 100, the reaction chamber 100 including chamber sidewalls surrounded by four walls 110, one of which (e.g. Figure 2 A transfer port 112 is provided on the right-side wall 110 (hereinafter referred to as the first wall) for the substrate W to enter and exit the reaction chamber 100; a base 120 is used to support the substrate W, and the base 120 is located at the bottom of the reaction chamber 100, which can be positioned at the process location (e.g., ...). Figure 1 (as shown) and cleaning locations (such as) Figure 2 The base 120 can move between the process position and the cleaning position (as shown). It can also move to a transfer position to receive and transfer the substrate W. The transfer position is lower than the process position and the cleaning position. When the base 120 is in the transfer position, the substrate W is transferred into the reaction chamber 100 through the transfer port 112. The lifting pin 170 rises to receive the substrate W and then descends to place the substrate W on the base 120. The process of transferring the substrate W out of the reaction chamber is the reverse of the transfer process and will not be described in detail here. A shielding frame 130 is erected around the base 120 when the base 120 is in the process position. The shielding frame 130 has a square frame structure, meaning it has a hollow portion to expose the substrate W within the reaction chamber 100. The chemical vapor deposition apparatus also includes the shielding frame support 140 provided in this embodiment, disposed within the reaction chamber 100, for supporting the shielding frame 130.
[0033] The reaction cavity further comprises a gas shower head 150 located at the top of the reaction cavity 100 and opposite to the susceptor 120, for introducing reaction gas and cleaning gas into the reaction cavity 100. The reaction cavity further comprises a vacuum pump 160 arranged at the bottom wall of the reaction cavity 100, for pumping gas from the reaction cavity 100 to control the reaction cavity 100 at a desired pressure.
[0034] When the susceptor 120 is in the cleaning position and the wafer transfer position, the shielding frame 130 is placed on the shielding frame support 140, and when the process is performed, the susceptor 120 is raised from the wafer transfer position to the process position, and the shielding frame 130 is lifted to be away from the shielding frame support 140, as shown in Figure 1 When the process is performed, the distance between the upper surface of the shielding frame 130 and the lower surface of the gas shower head 150 is small, so that the gas between the gas shower head 150 and the substrate W can be choked, and the uniformity of the gas pumping in the reaction cavity 100 can be ensured even if the vacuum pump 160 is in an off-center state (i.e. the vacuum pump 160 is not at the center of the bottom wall of the reaction cavity 100).
[0035] When the reaction cavity 100 needs to be cleaned, the susceptor 120 is lowered from the process position to the cleaning position, as shown in Figure 2 At this time, the shielding frame support 140 and the susceptor 120 jointly support the shielding frame 130, and the distance between the shielding frame 130 and the gas shower head 150 is large, and the vacuum pump 160 is in an off-center state, so that the gas in the reaction cavity 100 is not pumped uniformly. Based on this, the shielding frame support 140 provided by the embodiment guides the cleaning gas radicals to the four corners by forming a gap between the four support bars at the four corner positions of the reaction cavity 100 and the side wall of the reaction cavity 100 to form a gas flow channel, and by arranging a gas guide hole on the support bar to guide the cleaning gas radicals to the side wall of the cavity, so that the side wall of the cavity and the four corners can be pumped uniformly, thereby improving the cleaning effect of the side wall of the cavity and the corners.
[0036] The following will be described in combination with Figure 3 , Figure 4The shielding frame support 140 is described in detail. The shielding frame support 140 includes four support bars 141, which are respectively arranged on the four walls 110 of the reaction cavity 100 and are spaced from each other, so as to form notches X at the four corner positions of the reaction cavity 100 for guiding the cleaning gas radicals to the four corners, and the support bars 141 except the support bar 141 on the first wall are provided with a plurality of gas guiding holes 142 along the extending direction thereof, the gas guiding holes 142 are used for guiding the cleaning gas radicals to the cavity side wall, so that the cleaning gas radicals are guided more uniformly in the reaction cavity 100, thereby improving the cleaning gas pumping uniformity and improving the cleaning effect. In addition, since the substrate W is transmitted in and out through the support bar 141 arranged on the first wall due to the substrate transmission port 112 arranged on the first wall, the film deposited on the support bar 141 in the deposition process is easy to form particle contaminants which fall on the substrate W during the cleaning process. Therefore, no gas guiding hole is arranged on the support bar 141, and the cleaning gas is not guided to the side wall 110 with the substrate transmission port 112 during the cleaning process, so as to reduce the probability of particle contaminants falling on the substrate W during the transmission of the substrate W.
[0037] It can be understood that, in order to ensure the pumping uniformity of the four corners, the sizes of the notches X at the four corners can be kept consistent. In the embodiment, Figure 3 The reaction cavity 100 shown in the figure is a square cavity, so that the center of each support bar 141 corresponds to the center of each wall 111, and the lengths of the opposite support bars 141 are the same, so as to form L-shaped notches with the same size at the four corners. In some embodiments, the reaction cavity 100 can also be a rectangular cavity, that is, the lengths of two opposite cavity side walls are greater than the lengths of the other two opposite cavity side walls, and the lengths of the four support bars 141 are all less than the lengths of the inner walls of the respective side walls.
[0038] In an embodiment, the gas guiding holes 142 are uniformly distributed on the support bar 141. However, the inventors have found in practical application that, due to the existence of the notches X at the four corners, the gas pumping flow rate is greater near the two ends of the support bar 141. Therefore, in order to balance the flow rate of the cleaning gas radicals guided to the cavity side wall, the gas flow rate through the gas guiding holes 142 can be gradually reduced from the center to the two ends of the support bar 141, so that the gas flow rate guided to the entire cavity side wall tends to be the same.
[0039] In an alternative embodiment, the sizes of the gas guiding holes 142 can be gradually reduced from the center to the two ends of the support bar 141, so as to achieve the gradual reduction of the gas flow rate through the gas guiding holes 142. For example, the diameter of the gas guiding hole 142 is greater than 3 mm, and in particular, the diameter of the gas guiding hole 142 is in the range of 4 mm to 20 mm.
[0040] In another alternative embodiment, the distribution of the gas guiding holes 142 gradually becomes sparse from the center to the two ends of the support bar 141, so as to gradually reduce the gas flow through the gas guiding holes 142.
[0041] In this embodiment, the upper surface of the support bar 141 is provided with a plurality of pads 143 for supporting the shielding frame 130. By providing the pads 143 to support the shielding frame 130, the contact area between the shielding frame 130 and the support bar 141 can be reduced, thereby reducing the generation of particulate contaminants. Alternatively, the pads 143 and the shielding frame 130 are in line contact, which can further reduce the contact area between the shielding frame 130 and the support bar 141, thereby reducing the generation of particulate contaminants. Figure 4 A schematic diagram of a pad 143 in line contact with a shielding frame 130 is shown. The top of the pad 143 is arc-shaped and tangent to the shielding frame 130, so as to achieve line contact with the shielding frame 130. The pad 143 can also be designed in other structures as long as it can achieve line contact with the shielding frame 130.
[0042] The material of the pad 143 can be ceramic, which can insulate the pad 143 from the shielding frame 130. In addition, ceramic has good wear resistance, which can reduce the generation of particulate contaminants when the shielding frame 130 contacts the pad 143.
[0043] Alternatively, the vertical distance between the top of the pad 143 and the upper surface of the support bar 141 is 0.2mm-1mm. Since the material of the support bar 141 is usually aluminum, the surface has roughness. If the distance is too small, the pad 143 is not high enough, and the shielding frame 130 can contact the support bar 141 in some areas. If the distance is too large, it will cause the cleaning gas to leak out from the gap between the support bar 141 and the shielding frame 130, affecting the cleaning effect.
[0044] It should be noted that the relative terms such as first and second, etc. are used herein only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between the entities or operations. Moreover, the terms "include", "contain" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or equipment. Without more limitations, the element defined by the statement "including a" does not exclude the presence of additional identical elements in the process, method, article or equipment including the element.
[0045] Although the content of the present application has been described in detail by the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present application. After reading the above content, various modifications and alternatives of the present application will be obvious to those skilled in the art. Therefore, the protection scope of the present application should be defined by the appended claims.
Claims
1. A shadow frame support member disposed within a reaction chamber of a chemical vapor deposition apparatus for providing support to a shadow frame, said reaction chamber comprising a chamber sidewall enclosed by four walls, wherein a first wall is provided with a wafer port, characterized in that, The shielding frame support comprises four support bars, each of which is arranged on one of the four walls and is separated from the others, and each of the support bars, except the one on the first wall, is provided with a plurality of gas guiding holes along its extending direction.
2. The masking frame support of claim 1, wherein, The gas flow through the gas guiding holes gradually decreases from the center to the ends of the support bars.
3. The masking frame support of claim 2, wherein, The size of the gas guiding holes gradually decreases from the center to the ends of the support bars.
4. The masking frame support of claim 2 or 3, wherein, The diameter of the gas guiding holes is greater than 3mm.
5. The masking frame support of claim 4, wherein, The diameter of the gas guiding holes is in the range of 4mm to 20mm.
6. The masking frame support of claim 2, wherein, The distribution of the gas guiding holes gradually becomes sparse from the center to the ends of the support bars.
7. The masking frame support of claim 1, wherein, The gas guiding holes are uniformly distributed on the support bars.
8. The masking frame support of claim 1, wherein, The upper surface of the support bar is provided with a plurality of pads for supporting the shielding frame.
9. The masking frame support of claim 8, wherein, The pads are made of ceramic.
10. The masking frame support of claim 8, wherein, The pads and the shielding frame are in line contact.
11. The masking frame support of claim 8, wherein, The vertical distance between the plane where the top of the pad is located and the upper surface of the support bar is in the range of 0.2mm to 1mm.
12. A chemical vapor deposition apparatus characterized by comprising: It comprises: a reaction cavity; a susceptor for carrying a substrate, the susceptor being located at the bottom of the reaction cavity and being movable between a process position and a cleaning position; a shielding frame for covering the edge area of the susceptor when the susceptor is in the process position; a shielding frame support as claimed in any one of claims 1 to 11, arranged in the reaction cavity and used for supporting the shielding frame.
13. The chemical vapor deposition apparatus of claim 12, wherein The shielding frame support and the susceptor jointly support the shielding frame when the susceptor is in the cleaning position.